JP2007008737A - Single crystal pulling apparatus, silicon single crystal pulling apparatus and silicon single crystal pulling method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a single crystal pulling apparatus which is provided with a vibration damping mechanism that can prevent a single crystal from swinging by detecting an earthquake before the single crystal swings without accompanying a large scale reconstruction. <P>SOLUTION: In a single crystal pulling apparatus for pulling a single crystal using the CZ method, the present single crystal pulling apparatus controls the swinging of the single crystal by providing a vibration damping mechanism 9 which is provided on a pulling chamber 2a at the upper part of the single crystal pulling apparatus 1 and on which the pulling mechanism 7 for pulling the single crystal by wire 11 is arranged and which is provided with an XY table 12 capable of advancing/retreating in a 2 dimensional direction in the horizontal plane and provided with a drive mechanism capable of retreating the XY table 12, by providing a displacement gauge 15 mounted on a base on which the single crystal pulling apparatus 1 is placed and fixed, and by providing a control means for controlling said vibration damping mechanism 9 on the basis of the calculated results obtained by calculating the moving quality and the moving speed of the single crystal pulling apparatus 1 on the basis of the displacement information outputted from the displacement gauge 15. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a single crystal pulling apparatus, a silicon single crystal pulling apparatus, and a single crystal pulling method, and more particularly to a single crystal pulling apparatus, a silicon single crystal pulling apparatus, and a single crystal swing provided with a vibration control mechanism that prevents the single crystal from swinging. The present invention relates to a method for pulling up a silicon single crystal that enables vibration control.

  Conventionally, in the production of a silicon single crystal by the Czochralski method (CZ method), single crystal silicon is used as a seed crystal, and after contacting the silicon melt, the single crystal is slowly pulled up while rotating. It is trained.

  During this growth process, when the single crystal is shaken due to an earthquake or the like, if the degree is small, adverse effects on the growth can be avoided by adjusting the rotational speed. On the other hand, if the single crystal shakes greatly, the single crystal growth is interrupted or re-melting is forced, and further, the contact between the single crystal and the member or the falling of the single crystal causes the in-furnace member and the main body of the furnace. There is a risk of damaging itself.

  In order to avoid such damage, a seismic isolation device for a single crystal pulling device has been proposed.

  For example, Patent Document 1 discloses a detection device that detects a shake amount and a shake direction from a rotation axis of a support body of a seed holder and a wire, and from a shake width and a shake direction detected by the detection device, There has been proposed a single crystal pulling apparatus including a programmable controller that calculates a fulcrum position of a wire that can prevent deflection, and a moving device that moves the fulcrum of the wire calculated by the programmable controller.

  However, in the method of Patent Document 1, the method of controlling the fulcrum position of the wire performs vibration control after starting to detect the wire shake. For this reason, in a pulling machine in which the clearance between the single crystal and the radiation shield is very narrow, the vibration control operation is performed in a state where the single crystal is shaken, and thus there is a risk that the vibration is amplified.

In addition, Patent Document 2 proposes an active / passive switching system as a vibration control mechanism for a single crystal pulling machine. The cost of remodeling work is expected to be large, and the damage caused by the suspension of production during the construction period is large.
JP-A-62-2252396 JP 2004-332863 A

  The present invention has been made in consideration of the above-described circumstances, and is equipped with a vibration control mechanism that can detect an earthquake before the single crystal shakes and suppress the single crystal shake without involving a large-scale construction. Another object of the present invention is to provide a single crystal pulling apparatus.

  Another object of the present invention is to provide a silicon single crystal pulling apparatus equipped with a vibration control mechanism capable of detecting an earthquake before the single crystal shakes and suppressing the shake of the single crystal without involving a large-scale construction. To do.

  It is another object of the present invention to provide a silicon single crystal pulling method capable of detecting an earthquake before a single crystal is shaken and suppressing the shake of the single crystal without involving a large-scale construction.

  In particular, since earthquakes that occur outside the direct area have a small acceleration and a long period, the operator is not aware of it, the response may be delayed, and damage may occur. Is what you do.

  In order to achieve the above-described object, a single crystal pulling apparatus according to the present invention is a single crystal pulling apparatus that pulls a single crystal using the Czochralski method, and is provided in a pulling chamber above the single crystal pulling apparatus. A pulling mechanism for pulling up a crystal with a wire is installed, and a vibration control mechanism including an XY table that can be moved back and forth in a two-dimensional direction in a horizontal plane, a drive mechanism that moves the XY table back, and the single crystal pulling device are mounted. A displacement meter attached to a fixed base, and based on displacement information output from the displacement meter, a movement amount and a movement speed of the single crystal pulling device are calculated, and the vibration damping mechanism is calculated based on the calculation result. And a control means for controlling the movement of the single crystal.

  The silicon single crystal pulling apparatus according to the present invention is a silicon single crystal pulling apparatus that pulls up a silicon single crystal using the Czochralski method. The silicon single crystal pulling apparatus is provided in a pulling chamber above the silicon single crystal pulling apparatus. A pulling mechanism for pulling up the wire with a wire is installed, and a vibration control mechanism including an XY table that can be moved back and forth in a two-dimensional direction in a horizontal plane, a drive mechanism that moves the XY table back, and the silicon single crystal pulling device are mounted. A displacement meter attached to a fixed base, and a displacement amount and a movement speed of the silicon single crystal pulling device based on displacement information output from the displacement meter, and the vibration damping And control means for controlling the movement of the mechanism to control the vibration of the silicon single crystal.

  Further, the silicon single crystal pulling method according to the present invention is a method of manufacturing a single crystal using the Czochralski method, and detects the displacement and speed of the foundation of the single crystal pulling apparatus during the pulling process of the single crystal. The single crystal is characterized by moving the fulcrum of the wire of the pulling mechanism on the basis of the detection information in the plane with the displacement and speed opposite to the base.

  According to the single crystal pulling apparatus according to the present invention, a single crystal provided with a damping mechanism capable of detecting an earthquake before the single crystal shakes and suppressing the single crystal shake without involving a large-scale construction. A pulling device can be provided.

  In addition, the silicon single crystal pulling apparatus according to the present invention includes a vibration damping mechanism that can detect an earthquake before the single crystal shakes and suppress the single crystal shake without involving a large-scale construction. A silicon single crystal pulling apparatus can be provided.

  Further, according to the silicon single crystal pulling method according to the present invention, the silicon single crystal pulling method capable of detecting an earthquake before the single crystal shakes and suppressing the single crystal swing without involving a large-scale construction. Can be provided.

  Hereinafter, an embodiment of a single crystal pulling apparatus according to the present invention will be described with reference to the accompanying drawings.

  FIG. 1 is a conceptual diagram of a single crystal pulling apparatus according to the present invention, and FIG. 2 is a conceptual diagram of a vibration damping mechanism used in the single crystal pulling apparatus according to the present invention.

  As shown in FIGS. 1 and 2, a single crystal pulling apparatus 1 according to the present invention is a silicon single crystal pulling apparatus using the Czochralski method, and includes a furnace body 2 that is kept warm. Includes a quartz glass crucible 3 for melting raw material silicon, a graphite crucible 4 supporting the quartz glass crucible 3, and a heater 5 for melting raw material silicon, and the quartz glass crucible 3 is rotated by a crucible rotating lifting mechanism 6. It is like that.

  On the other hand, a pulling mechanism 7 is provided in the pulling chamber 2 a above the furnace body 2. The pulling mechanism 7 is attached to the pulling chamber 2a via the mounting base 8 and the vibration damping mechanism 9, and winds up a wire 11 having a chuck 10 for fixing the seed crystal so as to be able to move up and down, and grows the grown single crystal Ig. It is designed to pull up.

The vibration damping mechanism 8 includes an XY table 12 composed of an X table 12x and a Y table 12y, and a servo mechanism 13 that moves the XY table 12 back and forth in a two-dimensional direction in a horizontal plane and has an X servo motor 13x and a Y servo motor 13y. An X table 12x placed on the mounting base 8 and guided by guide rails 8a provided so as to protrude from the mounting base 8 is rotated by the X servo motor 13x and the X servo motor 13x. is moved in the X direction by the rotation of the ball screw 13x ₂ screwed into the screw hole 12x ₁ provided in the table 12x, also, Y table 12y which is guided by the guide rails 12a which protrudes Article 2 the X table 12x is , The Y servo motor 13y and the Y servo motor 13y are rotated by the Y table 12y. Is moved in the Y direction by the rotation of the ball screw 13y ₂ screwed into the screw holes 12y ₁ that vignetting. A wire through hole 12p is formed at the center of the X table 12x and the Y table 12y.

  A displacement meter 15 is provided on the base 14 of the single crystal pulling apparatus 1. The displacement meter 15 is a general displacement meter, and can detect the displacement of the foundation 14 in the two-dimensional direction.

  Further, as shown in FIG. 3, the single crystal pulling apparatus 1 is provided with a programmable controller 16 as a control means, and the CPU stores a control program stored in the ROM while exchanging data with the ROM and RAM. It is supposed to run. Also, the programmable controller 16 includes a sum of the length of the wire 11 and the length of the single crystal Ig obtained by experiments, a displacement gain, a speed gain, and a frequency (resonance frequency) that affects the shake of the sum and the single crystal. ) Is stored in the ROM of the programmable controller 16, and the seismic frequency is calculated from the displacement information by the programmable controller 16.

The programmable controller 16 is connected to a displacement meter 15, an X motor controller 13x ₂ for controlling the X servo motor 13x _1, and a Y motor controller 13y ₂ for controlling the Y servo motor 13y ₁ , and the heater 5 A heater input controller 5a for controlling input to the crucible, a crucible rotation raising / lowering controller 6a for controlling the crucible rotation raising / lowering mechanism 6, a pulling mechanism controller 7a for controlling the pulling mechanism 7, and a diameter of the grown silicon single crystal are detected. A CCD camera 17 or the like is connected.

  Next, a silicon single crystal pulling method using the silicon single crystal pulling apparatus according to the present invention will be described.

  As shown in FIG. 1, raw material silicon is filled in a quartz glass crucible 3 and heated by a heater 5 disposed around the quartz glass crucible 3 to form a melt M.

  Thereafter, an inert gas is introduced into the furnace main body 2, the quartz glass crucible 3 is rotated by the crucible rotation elevating mechanism 6, and the seed crystal attached to the chuck 10 provided on the wire 11 of the pulling mechanism 7 is lowered. After being immersed in the melt M, the wire 11 is wound up by the pulling mechanism 7 to grow a silicon single crystal.

  In this growing process, the displacement meter 15 is always in a state where the displacement of the foundation 14 can be detected, and transmits displacement information to the programmable controller 16 in time series. When the seismic frequency calculated from this displacement information becomes equal to the resonance frequency, the programmable controller 16 that has received this signal operates the servo mechanism 13 of the vibration damping mechanism 8 and moves the XY table 12 to The pulling mechanism 7 is moved on the plane with the opposite phase displacement and speed, and the fulcrum P of the wire 11 is moved.

The displacement amount and speed of the XY table 12, that is, the fulcrum P at this time are calculated as follows.

  Thus, the foundation 14 is detected by the displacement meter 15 due to an earthquake or the like, the vibration control mechanism 8 is moved via the programmable controller 16, the fulcrum P of the wire 11 supporting the single crystal is moved, and the displacement of the foundation is detected. It is possible to create a reverse-phase displacement, greatly reduce the shake of the single crystal Ig, and prevent it from hitting the furnace main body or the in-furnace member.

  According to the single crystal pulling apparatus of the present embodiment as described above, a vibration damping mechanism that can detect an earthquake before the single crystal shakes and suppress the single crystal shake without involving a large-scale construction. The single crystal pulling apparatus provided is realized.

  In addition, according to the single crystal pulling method of the present embodiment as described above, a single crystal pulling method capable of detecting an earthquake before the single crystal shakes and controlling the single crystal swing without involving a large-scale construction. Is realized.

The conceptual diagram of the single crystal pulling apparatus which concerns on this invention. The conceptual diagram of the damping mechanism used for the single crystal pulling apparatus which concerns on this invention. The control circuit diagram used for the single crystal pulling apparatus which concerns on this invention. The vibration control block diagram of the single crystal pulling apparatus which concerns on this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Single crystal pulling apparatus, 2 ... Furnace main body, 2a ... Pulling chamber, 3 ... Quartz glass crucible, 5 ... Heater, 7 ... Pulling mechanism, 7a ... Pulling mechanism controller, 9 ... Damping mechanism, 11 ... Wire, 12 XY table, 12x ... X table, 12y ... Y table, 13 ... servo mechanism, 13x ... X servo motor, 13y ... Y servo motor, 14 ... basic, 15 ... displacement meter, 16 ... programmable controller.

Claims (5)

In a single crystal pulling apparatus that pulls up a single crystal using the Czochralski method,
Provided in a pulling chamber above the single crystal pulling device;
A vibration control mechanism provided with a pulling mechanism for pulling up the single crystal with a wire and having an XY table capable of moving back and forth in a two-dimensional direction in a horizontal plane, and a drive mechanism for moving the XY table back,
A displacement meter mounted on a foundation on which the single crystal pulling device is mounted and fixed;
Based on displacement information output from the displacement meter, calculating a moving amount and a moving speed of the single crystal pulling device, and comprising a control means for controlling the movement of the vibration damping mechanism based on the calculation result,
A single crystal pulling apparatus, characterized by controlling the swing of a single crystal. The single crystal pulling apparatus according to claim 1, wherein the displacement meter is capable of detecting displacement in time series. In a silicon single crystal pulling apparatus that pulls up a silicon single crystal using the Czochralski method,
Provided in the pulling chamber at the top of the silicon single crystal pulling device;
A vibration control mechanism provided with a pulling mechanism for pulling up the silicon single crystal with a wire, and having an XY table capable of moving back and forth in a two-dimensional direction in a horizontal plane, and a drive mechanism for moving the XY table backward;
A displacement meter mounted on a foundation on which the silicon single crystal pulling device is mounted and fixed;
Based on displacement information output from the displacement meter, a movement amount and a movement speed of the silicon single crystal pulling device are calculated, and control means for controlling the movement of the vibration damping mechanism based on the calculation result,
A silicon single crystal pulling apparatus characterized by controlling a vibration of a silicon single crystal. The silicon single crystal pulling apparatus according to claim 3, wherein the displacement meter can detect displacement in a time series. In the method for producing a silicon single crystal using the Czochralski method, the displacement and speed of the foundation of the single crystal pulling apparatus are detected during the pulling process of the single crystal, and the fulcrum of the wire of the pulling mechanism is determined based on this detection information. A silicon single crystal pulling method characterized by a single crystal by moving in a plane with a displacement and speed of opposite phase to the foundation.

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