JP2007005684A - Transistor using conductive nano wire - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a new transistor using conductive nano wire consisting of an organic compound of organic conduction system. <P>SOLUTION: In the transistor of this mode, a transistor 1 is connected with the conductive nano wire between a source electrode 2 and drain electrode 3; the transistor 1 has a construction preparing an insulating layer 5 between both source electrode 2 and drain electrode 3 and a gate electrode 6; and it is formed in order with a gate electrode, insulating layer, source electrode, drain electrode, and nano wire. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a transistor using conductive nanowires and the like. More specifically, the present invention relates to a novel transistor in which a source electrode and a drain electrode are connected using a conductive nanowire using an organic compound of an organic conductive system.

The present inventors have developed a novel method for producing conductive nanowires. And the novel electroconductive nanowire using the organic compound manufactured with the manufacturing method is indicated by the following patent document 1 (WO03 / 076332 gazette). Although the conductive nanowire disclosed in this document is a novel substance, its physical properties have unknown parts, and its use other than being used as an electronic circuit has not always been clear.
WO03 / 076332 Publication

  Although semiconductor field effect transistors are well known, metals are usually not used as transistors. On the other hand, when the physical properties of the conductive nanowire disclosed in the above document were measured, the band structure was similar to metal. Therefore, it was considered that conductive nanowires are not suitable for transistors. However, it was found that when a transistor was fabricated using this conductive nanowire, it had transistor characteristics. A transistor using a conductive nanowire made of an organic compound having such an organic conductive system has not been known so far. Therefore, an object of the present invention is to provide an unprecedented transistor, that is, a transistor using conductive nanowires.

  The present invention basically relates to a transistor including a source electrode, a drain electrode, and a gate electrode, and the source electrode and the drain electrode are connected by a conductive nanowire. Since the transistor in which the source electrode and the drain electrode are connected with the conductive nanowire has a transistor characteristic unexpectedly, a novel transistor can be provided.

  ADVANTAGE OF THE INVENTION According to this invention, the novel transistor using the electroconductive nanowire which consists of an organic compound of an organic conductive system can be provided. Since this transistor is in an ON state in a normal state, there is a demerit in terms of energy consumption. However, it is expected to be used for various applications as a small transistor with high conductivity.

  The transistor of the present invention will be specifically described with reference to the drawings. FIG. 1 is a schematic configuration diagram of a transistor of the present invention. FIG. 1A is a front view of a transistor according to the first embodiment of the present invention. FIG. 1B is a cross-sectional view taken along the line II of FIG. As shown in FIG. 1B, the transistor 1 of this embodiment is a transistor in which the source electrode 2 and the drain electrode 3 are connected by a conductive nanowire 4. The transistor 1 has a structure in which an insulating layer 5 is provided between the source electrode 2 and the drain electrode 3 and the gate electrode 6. In the transistor of this embodiment, the gate electrode 6; the insulating layer 5; and the source electrode 2, the drain electrode 3, and the conductive nanowire 4 are mounted in this order.

  In the transistor of this embodiment, as shown in FIG. 1B, the width of the gate electrode 6 and the width of the insulating layer 5 are substantially the same. Such a transistor is preferable because it can be manufactured by using a substrate in which a gate electrode and an insulating layer are integrated as a substrate, and connecting the source electrode and the drain electrode with a conductive nanowire by electrolysis.

  FIG. 2 is a schematic configuration diagram of a transistor of the present invention according to another embodiment. FIG. 2A is a front view of a transistor according to the second embodiment of the present invention. FIG. 2 (B) is a cross-sectional view taken along the line II of FIG. 2 (A). As shown in FIG. 2B, the transistor 1 of this embodiment is a transistor in which the source electrode 2 and the drain electrode 3 are connected by a conductive nanowire 4. The transistor 1 has a structure in which the source electrode 2 and the drain electrode 3 include the gate electrode 6 with the insulating layer 5 interposed therebetween. In the transistor of this embodiment, the gate electrode 6 is buried in the insulating layer 5, and at least two surfaces of the gate electrode are covered with the insulating layer. Further, the width of the gate electrode 6 is narrower than that between the outermost portions of the source electrode 2 and the drain electrode 3. That is, the gate electrode 6 exists below the source electrode 2 and the drain electrode 3, but the gate electrode 6 is configured not to protrude from the source electrode 2 and the drain electrode 3. In FIG. 2B, the transistor is formed on the substrate 7, but the substrate is an arbitrary element and may be omitted.

  FIG. 3 is a schematic configuration diagram of a transistor of the present invention according to another embodiment. FIG. 3A is a front view of a transistor according to the third embodiment of the present invention. FIG. 3 (B) is a cross-sectional view taken along the line II of FIG. 3 (A). As shown in FIG. 3 (B), the transistor 1 of this embodiment is a transistor in which the source electrode 2 and the drain electrode 3 are connected by a conductive nanowire 4. The transistor 1 has a structure in which the source electrode 2 and the drain electrode 3 include the gate electrode 6 with the insulating layer 5 interposed therebetween. In the transistor of this embodiment, the source electrode 2, the drain electrode, and the gate electrode 6 are buried in the insulating layer 5, and at least two surfaces of the gate electrode are covered with the insulating layer. Further, the width of the gate electrode is narrower than the width of the combined portion of the source electrode and the drain electrode. In FIG. 3B, the transistor is formed over the substrate 7, but the substrate is an optional element and may be omitted.

  FIG. 4 is a schematic configuration diagram of a transistor of the present invention according to another embodiment different from the above. FIG. 4A is a front view of a transistor according to the fourth embodiment of the present invention. FIG. 4 (B) is a cross-sectional view taken along the line AB of FIG. 4 (A). As shown in FIG. 4B, the transistor 1 of this embodiment is a transistor in which the source electrode 2 and the drain electrode 3 are connected by a conductive nanowire 4. The transistor 1 has a structure in which the source electrode 22 and the drain electrode 2 include the gate electrode 6 with the insulating layer 5 interposed therebetween. In the transistor of this embodiment, the gate electrode 6 and the insulating layer 5 cover the conductive nanowire 4. Further, the width of the gate electrode is the same as or narrower than the width of the combined portion of the source electrode and the drain electrode. In FIG. 4B, the transistor is formed over the substrate 27, but the substrate is an optional element and may be omitted.

  The materials of the source electrode, gate electrode, and drain electrode constituting the transistor may be the same or different. Examples of the material for these electrodes include conductive materials such as gold, platinum, copper, and graphite. Among these, gold or platinum is more preferable, but it is not particularly limited.

  As shown in FIGS. 1 to 4, the source electrode 2 and the drain electrode 3 are preferably configured as two opposing electrodes. A part of the two opposing electrodes may be covered with an insulating layer, or a face other than the face closest to each other may be covered with an insulating layer. As shown in FIGS. 1 (A) and 2 (A), the source electrode and the drain electrode have protrusions (convex portions) in the middle or at the tip thereof toward the other electrode. Is preferred.

  FIG. 5 is a diagram illustrating an example of the protrusions of the source electrode 2 and the drain electrode 3. Fig. 5 (A) shows that the tip portions are parallel to each other, Fig. 5 (B) shows that the tip portion of the protruding portion becomes narrower as it goes first, and Fig. 5 (C) FIG. 5 (D) shows a shape having a plurality of comb-shaped protrusions at the distal end, which has a stepped shape in which the distal end of the protruding portion becomes thinner as going forward. In the figure, 4a indicates a conductive nanowire connecting the source electrode 2 and the drain electrode 3, and 4b indicates that the source electrode 2 and the drain electrode 3 cannot be connected due to insufficient growth. Among these protrusions, the protrusions shown in FIGS. 5B to 5D are preferable, and the protrusion shown in FIG. 5D is particularly preferable. In the protrusions in FIG. 5 (A), since crystals grow from the entire parallel electrode surface, the crystal growth is insufficient and the source electrode 2 and the drain electrode 3 cannot be connected or the transistor characteristics are difficult to control. Become more. On the other hand, in the protrusions in FIGS. 5B and 5C, the crystal grows from the narrowed portion, so that the source electrode 2 and the drain electrode 3 can be effectively connected. On the other hand, the protrusion in FIG. 5 (D) has a plurality of, preferably 2 to 10, and more preferably 3 to 7, comb-like protrusions. Even if it does not grow sufficiently, the source electrode 2 and the drain electrode 3 can be connected. The plurality of protrusions may be provided with protrusions having the same length in parallel as shown in FIG. 5D, for example, or protrusions having different lengths may be provided in parallel. As shown in FIG. 5 (D), the intervals between the plurality of protrusions can be set at equal intervals, but the intervals may be narrower as they approach the center. The nanowire is preferably grown from the tips of a plurality of protrusions and connects the electrodes. Further, a plurality of protrusions may be provided at the tip as shown in FIG. 5 (B) or FIG. 5 (C). The width of the electrode is preferably 0.5 nm to 1 cm, more preferably 0.5 nm to 200 nm or 1 mm to 3 mm. The length of the electrode is preferably 1 nm to 25 mm.

  The distance between the source electrode and the drain electrode (distance between the closest parts) is 1 nm to 100 μm, more preferably 1 nm to 1 μm, and even more preferably 1 nm to 200 nm, but the desired nanowire length There is no particular limitation as long as it is suitable. This interval may be appropriately adjusted according to the physical properties of the nanowire.

  Nanowires exist between the source electrode and the drain electrode, and connect the source electrode and the drain electrode. Only one nanowire may exist between the source electrode and the drain electrode, or a plurality of nanowires may exist. Further, several nanowires may be connected between the source electrode and the drain electrode alone, or the source electrode and the drain electrode may be connected in a state where a plurality of nanowires are connected.

  Examples of the insulating layer include known insulating layers such as a silicon oxide film and a metal oxide film. The thickness of the insulating layer is 1 nm to 5 mm.

These transistors are normally turned on when no voltage is applied to the gate electrode, and a current flows when a voltage is applied between the source electrode 2 and the drain electrode 3, but when a voltage higher than the threshold is applied to the gate electrode, the transistor is turned off. Thus, even if a voltage is applied between the source electrode 2 and the drain electrode 3, no current flows.

[Method of manufacturing transistor]
The transistor of the present invention may be basically manufactured according to the method disclosed in WO03 / 076332. In the present invention, for example, a source electrode and a drain electrode are formed on a substrate. Examples of the method for forming an electrode on a substrate include, but are not limited to, mask vapor deposition, photolithography, electron beam lithography, and methods combining these methods.

  In the mask vapor deposition method, a mask in which a shape to be an electrode is hollowed is placed on a substrate, and a metal film is deposited thereon. Thereafter, the mask is removed from the substrate. In this way, a metal film is deposited only on the electrode portion, and a microelectrode can be formed.

  In electrode preparation by photolithography, a metal film forming process for forming a metal film on a substrate, a resist layer forming process for forming a resist layer on the metal film deposited in the metal film forming process, and a resist layer forming process A photosensitive step of exposing the resist layer formed in a desired pattern to a desired pattern; a developing step of developing the exposed resist layer; and an etching step of etching the metal film using the resist layer remaining after the development as a mask. The resist for forming the resist layer is not particularly limited as long as it is a so-called photoresist.

  In electrode preparation by electron beam lithography, a metal film forming process for forming a metal film on a substrate, a resist layer forming process for forming a resist layer on the metal film deposited in the metal film forming process, and a resist layer formation The resist layer formed in the process is irradiated with an electron beam in a desired pattern, the development process in which the resist layer irradiated with the electron beam is developed, and the resist layer remaining in the development is used as a mask to form a metal film. An etching step of etching. The resist for forming the resist layer is not particularly limited as long as it is a so-called electron beam resist.

[Method for producing conductive nanowires]
As a method for producing conductive nanowires (hereinafter, also simply referred to as nanowires), for example, an electrolysis apparatus disclosed in WO03 / 076332 can be used. When producing conductive nanowires, it is preferable to use a solution (electrolytic solution) in which a substance that becomes a nanowire (such as a molecule constituting the conductive nanowire) is dissolved. It is preferable to produce conductive nanowires by an electrolytic method in which a voltage is applied to the electrolytic solution in which a substance that becomes conductive nanowires is dissolved using the above-described electrode. In the present invention, the space between the electrodes is minute, and a minute conductive nanowire (such as a needle-like crystal or a rod-like crystal) can be manufactured. In conventional molecular vapor deposition and molecular beam methods in ultra-high vacuum, it was necessary to introduce functional groups that cause interactions such as hydrogen bonding between molecules when producing conductive nanowires. . In addition, the obtained nanowire is also an aggregate of molecules with a closed shell structure, and as a result of clogging HOMO with two electrons, only chargeless and non-conductive nanowires (insulators) can be obtained. It was. However, the electrolytic crystal growth method (electrolysis method) of the present invention can create a state in which electrons are extracted from part or all of the HOMO of closed-shell molecules, and part or all of the nanowire becomes SOMO. . In the present invention, a conductive nanowire can be grown by utilizing a charge transfer interaction by growing a needle crystal or the like in an electric field. As a result, according to the present invention, a nanowire having conductivity and conductivity can be obtained.

The conductive nanowire is manufactured, for example, so as to connect a source electrode and a drain electrode. More specifically, as shown in FIG. 5D, conductive nanowires are formed so as to connect the opposing protrusions of both electrodes. Examples of conductive nanowires include those containing crystals of organic compounds, and more specifically, those composed of single crystals of organic compound complexes or single crystals of organic compounds. These crystals can be conductive. Crystals of the organic compound include dmit complexes; or TTT (tetrathiotetracene), TTF (tetrathiafulvalene) derivatives, porphyrin derivatives, porphyrin derivatives, phthalocyanine derivatives, phthalocyanine derivatives, or crystals of these complexes. More specifically, the crystal of the organic compound is perylene · [M (mnt) ₂ ] (M represents a metal and mnt represents malononitrile dithiolate), TTF · X _n (TTF is tetrathiafulvalene). X represents Cl or Br.), (NO ₂ ) _0.1 · TCNQ (TCNQ represents tetracyanoquinodimethane), Cu · TCNQ, (fluoranthene) ₂ · PF ₆ , (TMTSF) ₂ · X (TMTSF represents tetramethyltetraselenafulvalene, X represents an anion), (BEDT-TTF) ₂ · I ₃ , (BEDT-TTF) ₃ · (Cl · H ₂ 0) ₂ , (BEDT- _{TTF) 2 · Cu (NCS)} 2, TMA · [Ni (dmit) 2] 2 (TMA is Tetoramechirua Indicates Moniumu, dmit the dithiol thione dithio _{acrylate, Cat x [M (Pc)} L 2] y (Cat is a cation, M represents a metal, L is shown an axial ligand, Pc represents a phthalocyanine, x, y is a number of 0 or more.), which is a partial oxide crystal of Cat _x [M (Pc) L ₂ ] _y , and TPP · [Co (Pc) (CN) ₂ ] There are _two crystals.

Examples of the substance that becomes a nanowire include an organic compound, preferably an organic compound that becomes an organic conductor, and a compound that forms a conductor by an electrolytic method is preferable. Organic conductors include organic compounds having π electrons. In the present specification, the organic compound includes a salt of an organic ion and an inorganic ion, or a salt composed of a plurality of types of organic ions having different charges. Examples of organic compounds that can be used as nanowire materials include TTTs, TTF derivatives, dmit complexes, porphyrin derivatives or complexes with porphyrin derivatives, phthalocyanine derivatives or complexes with phthalocyanine derivatives.

  Examples of the TTF derivative include a derivative represented by the following general formula (I), a BEDT-TTF derivative represented by the following general formula (II), and a BMDT-TTF derivative represented by the following general formula (III).

(I)

In formula (I), R ^{1 to} R ⁴ may be the same or different and each has a substituent selected from a hydrogen atom, a halogen, a hydroxy group, a carboxyl group, a cyano group, a carbamoyl group, and a substituent group A. A C ₁ -C ₄ alkyl group, which may have a substituent selected from the substituent group A, a C ₂ -C ₄ alkenyl group which may have a substituent selected from the substituent group A, and a substituent selected from the substituent group A A C ₂ -C ₄ alkynyl group, which may have a substituent selected from the substituent group A or a C ₁ -C ₄ alkoxy group which may have a substituent selected from the substituent group A _{A 1} -C ₄ alkylthio group or a C ₁ -C ₄ alkylsulfonyl group which may have a substituent selected from the substituent group A;
Substituent group A represents a group consisting of halogen; hydroxy group; carboxyl group; cyano group; halogen and hydroxy group;
A saturated or unsaturated 5-membered ring in which either or both of R ¹ and R ² ; or R ³ and R ⁴ may be linked to each other and have one or more substituents selected from the substituent group A Shows a ~ 8 membered ring.

When the substituent in formula (I) is bulky, the planarity of the compound represented by formula (I) is impaired, and it becomes difficult for a plurality of molecules to overlap. From such a viewpoint, the compound represented by the formula (I) may be unsubstituted or R ^{1 to} R ⁴ may be the same or different, and may be a hydrogen atom, a halogen, a hydroxy group, a carboxyl group, a cyano group, a carbamoyl group, C ₁ -C ₄ alkyl group, C ₂ -C ₄ alkenyl group, C ₂ -C ₄ alkynyl group, C ₁ -C ₄ alkoxy group, C ₁ -C ₄ alkylthio group or C ₁ -C ₄ alkylsulfonyl group R ¹ and R ² ; or any one or both of R ³ and R ⁴ are preferably linked to represent a saturated or unsaturated 5- to 8-membered ring.

(II)

Formula (II) represents a BEDT-TTF derivative. In Formula (II), R ^{1 to} R ⁸ may be the same or different from each other, and are a hydrogen atom, a halogen, a hydroxy group, a carboxyl group, a cyano group, or a carbamoyl group. A C ₁ -C ₄ alkyl group which may have a substituent selected from the substituent group A, a C ₂ -C ₄ alkenyl group which may have a substituent selected from the substituent group A, a substituent C ₂ -C ₄ alkynyl group which may have a substituent selected from group A, C ₁ -C ₄ alkoxy group substituent A which may have a substituent selected from substituent group A A C ₁ -C ₄ alkylthio group which may have a substituent selected from: or a C ₁ -C ₄ alkylsulfonyl group which may have a substituent selected from substituent group A;
Substituent group A represents a group consisting of halogen; hydroxy group; carboxyl group; cyano group; halogen and hydroxy group;
R ¹ , R ² and R ³ , R ⁴ ; or R ⁵ , R ⁶ and any one or both of R ⁷ and R ⁸ are linked and have one or more substituents selected from the substituent group A Saturated or unsaturated 5-membered ring to 8-membered ring may be used.

In addition, when the substituent in formula (II) is bulky, the planarity of the compound represented by formula (II) is impaired, and it becomes difficult for a plurality of molecules to overlap. From such a viewpoint, the compound represented by the formula (II) may be unsubstituted or R ^{1 to} R ⁸ may be the same or different, and may be a hydrogen atom, halogen, hydroxy group, carboxyl group, cyano group, carbamoyl group, C ₁ -C ₄ alkyl group, C ₂ -C ₄ alkenyl group, C ₂ -C ₄ alkynyl group, C ₁ -C ₄ alkoxy group, C ₁ -C ₄ alkylthio group or C ₁ -C ₄ alkylsulfonyl group Or R ¹ , R ² and R ³ , R ⁴ ; or any one or both of R ⁵ , R ⁶ and R ⁷ , R ⁸ are linked to represent a saturated or unsaturated 5-membered to 8-membered ring Those are preferred.

(III)

Formula (III) represents a BMDT-TTF derivative. In Formula (III), R ^{5 to} R ⁶ may be the same or different from each other, and are a hydrogen atom, a halogen, a hydroxy group, a carboxyl group, a cyano group, or a carbamoyl group. A C ₁ -C ₄ alkyl group which may have a substituent selected from the substituent group A, a C ₂ -C ₄ alkenyl group which may have a substituent selected from the substituent group A, a substituent C ₂ -C ₄ alkynyl group which may have a substituent selected from group A, C ₁ -C ₄ alkoxy group substituent A which may have a substituent selected from substituent group A A C ₁ -C ₄ alkylthio group which may have a substituent selected from: or a C ₁ -C ₄ alkylsulfonyl group which may have a substituent selected from substituent group A;
Substituent group A represents a group consisting of halogen; hydroxy group; carboxyl group; cyano group; halogen and hydroxy group.

  Examples of TTF derivatives include those in the above general formulas (I) to (III) in which one or a plurality of S is substituted with O, Se, or Te. Examples of such substituents are those in which S at the 2nd and 5th positions in formula (I) is replaced by O, Se or Te, the 2nd, 5th, 2 'and 5' positions in formula (I). In which the S in the position is substituted with O or Se or Te; the 2-position and the 9-position S in the formula (II) are substituted with O, Se or Te, the 2-position, the 9-position in the formula (II), S in which 2'-position and 9'-position are substituted with O or Se or Te, S in 2nd, 4th, 7th, 9th, 2 'and 9' positions in formula (II) is O or Substituted by Se or Te, S in the 2nd, 4th, 7th, 9th, 2 ', 4', 7 'and 9' positions of formula (II) is O, Se or Te Substituted at position 4 and 7 of formula (II) with O, Se or Te; or at position 2 and position 8 of formula (III) replaced with O, Se or Te Substituted, S in the 2nd, 8th, 2 'and 8' positions of formula (III) substituted with O, Se or Te, 2nd, 4th, 6th position of formula (III) , S in the 8th, 2 'and 8' positions substituted with O, Se or Te, the formula ( III) in which S in the 2nd, 4th, 6th, 8th, 2 ', 4', 6 ', and 8' positions is substituted with O, Se, or Te, in the formula (III) Examples thereof include those in which S at the 4th and 6th positions is substituted with O, Se or Te.

Specific TTF derivatives, bis (ethylenedithio) tetrathiafulvalene (BEDT-TTF), bis (ethylenedithio) tetrathiafulvalene _{-d 8: (BEDT-TTF-} d 8), bis (methylene) tetrathiafulvalene : (BMDT-TTF), bis (trimethylenedithio) tetrathiafulvalene: (BPDT-TTF), 4,4'-dimethylenetetrathiafulvalene: (SDM-TTF), tetrakis (methylthio) tetrathiafulvalene: (TMT -tTF), tetrakis (n- Bae Nechiruchio) tetrathiafulvalene: (TPT-TTF), tetrathiafulvalene (TTF), tetrathiafulvalene _{-d 4 [tetrathiafulvalene-d 4]} : (TTF-d 4) and the like . Examples of the S-substituted product of the TTF derivative include those in which 1 to 4 S in the TTF skeleton of the specific TTF derivative described above are substituted with Se, O, or Te, preferably 2 or 4 In which S is substituted with Se or Te.

  The dmit complexes are complexes represented by the following general formula (IV).

(IV)

  In the general formula (IV), M represents a metal. The dmit complexes include those in which one or two or more Ss are substituted with O, Se, or Te in the above general formula (IV). Examples of the S-substituted product of such dmit complexes include Se and Te-substituted products, but unsubstituted ones are preferred. A typical dmit complex is a 1,2-dithiolene metal complex. In addition, M usually forms a complex as a metal ion, and examples thereof include Ni, Pd, Pt, Cu, and Au. Ni, Pd, or Pt is preferable.

  Examples of TTTs include derivatives represented by the following general formula.

(V)

In the TTTs, in the general formula (V), R ^{1 to} R ⁴ may be those described in the formula (I), preferably R ¹ and R ² ; or R ³ and R ⁴ are each a hydrogen atom. Some of them have a conjugated structure in which benzene rings are linked through R ¹ -R ² position or R ³ -R ⁴ position. In the general formula (V), one in which one or two or more Ss are substituted with O, Se, or Te is also included. Also included are those in which a dithio-bridged site is bonded to any adjacent benzene ring.

Examples of the porphyrin derivative include one which is unsubstituted or has one or more hydrogen atoms outside the porphyrin ring; substituted with any of the following substituents. As a substituent in the porphyrin derivative, a halogen, hydroxy group, carboxyl group, cyano group, carbamoyl group, C ₁ -C ₄ alkyl group which may have a substituent selected from Substituent Group A, Substituent Group A C ₂ -C ₄ alkenyl group which may have a selected substituent, C ₂ -C ₄ alkynyl group which may have a substituent selected from Substituent Group A, Substituent Group A Or a substituent selected from the C ₁ -C ₄ alkylthio group or the substituent group A which may have a substituent selected from the C ₁ -C ₄ alkoxy group substituent group A C ₁ -C ₄ alkylsulfonyl group which may have a substituent, and examples of the substituent group A include a group consisting of a halogen, a hydroxy group, a carboxyl group, a cyano group, a halogen, and a hydroxy group.

  Examples of complexes with porphyrin derivatives include complexes of the porphyrin derivative with Zn, Ni, Fe, Cu, Mg, Co, or Ge.

Examples of the phthalocyanine derivative include one which is unsubstituted or has one or more hydrogen atoms outside the phthalocyanine ring; substituted by any of the following substituents. As a substituent in the porphyrin derivative, a halogen, hydroxy group, carboxyl group, cyano group, carbamoyl group, C ₁ -C ₄ alkyl group which may have a substituent selected from Substituent Group A, Substituent Group A C ₂ -C ₄ alkenyl group which may have a selected substituent, C ₂ -C ₄ alkynyl group which may have a substituent selected from Substituent Group A, Substituent Group A Or a substituent selected from the C ₁ -C ₄ alkylthio group or the substituent group A which may have a substituent selected from the C ₁ -C ₄ alkoxy group substituent group A C ₁ -C ₄ alkylsulfonyl group which may have a substituent, and examples of the substituent group A include a group consisting of a halogen, a hydroxy group, a carboxyl group, a cyano group, a halogen, and a hydroxy group.

Complexes with phthalocyanine derivatives include complexes of the above phthalocyanine derivatives and metals such as Co. Cat _x [M (Pc) L ₂ ] _y (Cat represents a cation, M represents a metal, and L represents an axis. It is preferably a partially oxidized salt crystal of a ligand, Pc represents phthalocyanine, and x and y represent a number of 0 or more. The combination of x and y is an arbitrary number that varies depending on the number of cations and anions, and either or both of them may not be integers. As a specific combination of x and y, both x and y One is listed. Examples of the cation Cat include known cations, such as tetraphenylphosphonium, tetramethylammonium, perixanthenoxanthene radical, and TTF radical. Tetraphenylphosphonium is preferred. Cat _x [M (Pc) L ₂ ] The metal corresponding to M in _y includes Co, Ni, Cu, Fe, Sn, Mn, Ru, Cr, Pb, Pt, Al, V or Au. Among these, Co, Ni, Cu, Fe, Sn, Mn, Ru, Cr, Pb, Pt, Al, and V are preferable, and Co is more preferable. Further, as the ligand L constituting Cat _x [M (Pc) L ₂ ] _y , CN, Cl, O, OH, NH ₃ , HNO ₃ , CO, H ₂ O, Br, I, PMe ₃ , CF ₃ and C ₂ O ₄ are included, and CN, Cl, O, OH, and NH ₃ are preferable, and CN is more preferable. As a partial oxide crystal of Cat _x [M (Pc) L ₂ ] _y , specifically, TPP · [Co (Pc) (CN) ₂ ] ₂ (tetraphenylphosphonium · dicyanocobalt (III) phthalocyanine) is listed. It is done.

In this specification, “C _m -C _n ” means that the number of carbon atoms is any of m to n.

“Alkyl group” means a monovalent group formed by loss of one atom of hydrogen from a linear or branched aliphatic hydrocarbon. As C ₁ -C ₄ alkyl group, a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a sec- butyl and tert- butyl groups.

“Alkenyl group” means a monovalent group formed by loss of one atom of hydrogen from a straight or branched aliphatic hydrocarbon having a double bond. C ₂ -C ₆ alkenyl groups include ethenyl, 1-propenyl, 2-propenyl, 2-methyl-1-propenyl, 1-butenyl, 2-butenyl, 3-butenyl, 3-methyl- Examples include 2-butenyl group, 1-pentenyl group, 2-pentenyl group, 3-pentenyl group, 4-pentenyl group, and 1-hexenyl group. C ₂ -C ₄ alkenyl groups include ethenyl, 1-propenyl, 2-propenyl, 2-methyl-1-propenyl, 1-butenyl, 2-butenyl, and 3-butenyl.

“Alkynyl group” refers to a monovalent group formed by loss of one atom of hydrogen from a linear or branched aliphatic hydrocarbon having a triple bond. C ₂ -C ₆ alkynyl groups include ethynyl, 1-propynyl, 2-propynyl, 2-methyl-1-propynyl, 1-butynyl, 2-butynyl, 3-butynyl, 3-methyl- Examples include 2-butynyl group, 1-pentynyl group, 2-pentynyl group, 3-pentynyl group, 4-pentynyl group, and 1-hexynyl group. Examples of the C ₂ -C ₄ alkynyl group include ethenyl group, 1-propenyl group, 2-propenyl group, 2-methyl-1-propenyl group, 1-butenyl group, 2-butenyl group, and 3-butenyl group.

“Alkoxy group” refers to a monovalent group generated by loss of a hydrogen atom from a hydroxyl group of a linear or branched alcohol. Examples of the C ₁ -C ₄ alkoxy group include a methoxy group, an ethoxy group, a propoxy group, an isopropoxy group, a butoxy group, an isobutoxy group, a sec-butoxy group, and a tert-butoxy group.

An “alkylthio group” is a group in which oxygen in an alkoxy group is replaced with sulfur. Examples of the C ₁ -C ₄ alkylthio group include a methylthio group, an ethylthio group, a propylthio group, an isopropylthio group, a butylthio group, an isobutylthio group, a sec-butylthio group, and a tert-butylthio group.

“Alkylsulfonyl group” refers to a monovalent group in which one hydrogen atom of an alkyl group is substituted with a sulfonyl group. Examples of the C ₁ -C ₄ alkylsulfonyl group include a methylsulfonyl group, an ethylsulfonyl group, a propylsulfonyl group, an isopropylsulfonyl group, a butylsulfonyl group, an isobutylsulfonyl group, a sec-butylsulfonyl group, and a tert-butylsulfonyl group.

“Halogen” includes fluorine, chlorine, bromine, and iodine.

As “saturated or unsaturated 5- to 8-membered ring”, furan, thiophene, pyrrole, 2H-pyrrole, oxazole, isoxazole, thiazole, isothiazole, imidazole, pyrazole, furazane, pyran, pyridine, pyridazine, pyrimidine, Examples include pyrazine, cyclopentane, cyclohexane, cycloheptane, cyclooctane, thiolane, thioan, thiopan, thiocan, dithiolane, dithioan, dithiopan, or dithiocan.

  Solvents that dissolve nanowires include organic solvents, among which acetonitrile, acetone, alcohols, benzene, halogenated benzene, 1-chloronaphthalene, dimethyl sulfoxide, N, N-dimethylformamide, Tetrahydrofuran, nitrobenzene, pyridine and the like are preferable, acetonitrile, acetone, ethanol and methanol are more preferable, and acetone and acetonitrile are still more preferable. Examples of the ratio of the organic solvent include, but are not particularly limited to, a material in which a substance that becomes a nanowire is saturated.

When the nanowire is (perylene) ₂ · [M (mnt) ₂ ] or (fluoranthene) ₂ · PF ₆ , the solvent is particularly preferably CH ₂ Cl ₂ , and the nanowire is TTF · X _n , (NO ₂ ) _{0 In the case of .1} · TCNQ and Cu · TCNQ, acetonitrile is particularly preferable, and in the case where the nanowire is Cat _x [M (Pc) L ₂ ] _{y, acetone and acetonitrile are particularly preferable. When such a combination of raw material and solvent is used, conductive nanowires can be produced effectively, and as a result, transistors can be produced effectively. That is, according to the present invention, an effective transistor manufacturing method can also be provided.}

  When producing nanowires by electrolysis or the like, a solution (electrolytic solution) containing a raw material is usually used. The concentration of the substance that becomes the conductive nanowire in this solution can be any concentration, but is 0.1 wt% to 90 wt%, preferably 1 wt% to 50 wt%, and more preferably 10 wt%. % By weight to 40% by weight or 20% to 30% by weight. The temperature of the electrolyte is preferably −30 ° C. to 200 ° C., more preferably −30 ° C. to 120 ° C., and particularly preferably 15 ° C. to 30 ° C. Or what is not solidified is preferable.

  The current passed through the electrode may be a direct current or an alternating current, but an alternating current is preferred. The current passed through the electrode is preferably 1 nA to 1 mA, more preferably 100 nA to 10 μA. The potential difference between the electrodes is preferably 10 mV to 20 V, more preferably 1 V to 5 V, and particularly preferably 2 V to 3 V. In the case of alternating current, the frequency is preferably 1 mHz to 1 kHz, more preferably 500 mHz to 10 Hz. In the case of an alternating current, the waveform may be a sine wave, a square wave, a sawtooth wave, etc., but a sine wave and a square wave are preferred, and a square wave is particularly preferred. The amplitude in the case of alternating current is preferably 10 mV to 20 V, more preferably 1 V to 5 V, and particularly preferably 2.5 V to 5 V. The time for applying the voltage or current is, for example, 10 days or less, preferably from 0.001 second to 10 days, and more preferably from 1 second to 2 days. An appropriate time may be set according to the applied current, applied voltage, and the like.

[Conductive nanowires]
Examples of conductive nanowires include conductive nanowires such as needle crystals. In this specification, a conductive nanowire is a needle-like or linear substance having a molecular arrangement regularly and having a width of 1 to 1 μm and a length of 2 or more molecules, and having conductivity. Refers to that.

  The diameter (maximum width) of the conductive nanowire is 1 nm to 1 μm, and more preferably 1 nm to 200 nm. The length of the conductive nanowire is 10 nm to 100 μm. In the nanowire of the present invention, the ratio (l / s) between the major axis l and the minor axis s is preferably 1 or more, more preferably 2 or more.

  In particular, it is preferable that the molecules (crystals) constituting the conductive nanowires are arranged in units of regularly arranged 100 to 100 rows to form the conductive nanowires, and more preferably if the molecules are 1 to 50 rows. Preferably, the molecules are 1 to 20 rows, more preferably 1, 2, 3, 4 or 5 rows. The needle-like crystal may be a wire shape curved to some extent. Since the oxidation-reduction reaction by electrolysis is used, it is possible to impart conductivity to the micro nanowire itself. In other words, since it does not have a closed shell structure like conventional micro nanowires, it becomes easy for electrons to move between molecules constituting the nanowires, so that it can have high conductivity.

The conductivity of the conductive nanowire is preferably controlled according to the required conductive nanowire, etc., but in general, the conductivity is preferably ¹ S · cm ⁻¹ or more and below the superconductor, and 10 S · more preferably not more than cm ^-1 or more superconductor, and more preferably not more than 100S · cm ^-1 or more superconductor, especially preferably not more than 500S · cm ^-1 or more superconductor, the conductivity 1 × 10 ¹⁰⁰ S · cm ⁻¹ or less, or 1 × 10 ¹⁰ S · cm ⁻¹ or less, and a preferable conductivity is selected according to the application.

  The shape of the conductive nanowire is preferably a needle shape, a linear shape, a columnar shape, a cylindrical shape, or a block shape, but is not particularly limited as long as molecules are regularly arranged.

  The conductive nanowire is preferably grown on the substrate, more preferably grown on the electrode and around the electrode, and particularly preferably grown between the electrodes, particularly in the gap portion. In order to grow conductive nanowires between the electrodes or in the gap portion, electrolysis is preferably performed. A direct current or an alternating current is preferable as the current during electrolysis, and an alternating current is particularly preferable. The electrolysis cell is preferably left stationary during the growth period.

  Crystals obtained by electrolysis may be used as conductive nanowires as they are. The obtained crystals may be further bundled to form a conductive nanowire, or the obtained crystal may be subjected to a coupling treatment, for example, processed for a conductive filler to form a conductive nanowire.

[Production Example 1: Production of micro-interval electrodes]
Using the electrolysis apparatus disclosed in WO03 / 076332, an electrode used for electrolysis was manufactured on a silicon substrate with an oxide film. A silicon substrate with a 30 x 10 mm oxide film was prepared, and platinum was deposited on the substrate. A photoresist agent S1818 (manufactured by Shipley Far East Co., Ltd.) was spin-coated on a platinum-deposited substrate. The spin coater was rotated at 5000 rpm for 90 seconds. A coating film was formed by drying at 110 ° C. for 2 minutes. The substrate coated with the photoresist was exposed through a mask in the form of an electrode using a mercury lamp light source mask aligner. Development was performed for 60 seconds using Microposit Developer MF319 (manufactured by Shipley Far East Co., Ltd.). At this time, the unexposed portion was completely dissolved. Subsequently, washing was performed using pure water. After that, etching was performed using a dry etching system (Samco RIE-10NR). Thereafter, the mask was removed from the substrate by dipping in a stripping solution. In this way, a platinum electrode was formed on the silicon substrate with an oxide film. The width of each electrode was 1 mm, the length of each electrode was 2.0 cm to 2.3 cm, and the distance between the electrodes was 20 μm.

[Production Example 2: Production of nano-interval electrodes]
Using the electrolysis apparatus disclosed in WO03 / 076332, an electrode used for electrolysis was manufactured on a silicon substrate with an oxide film. A 30 × 10 mm silicon substrate with an oxide film was prepared, and ZEP52A (manufactured by Zeon Corporation) was applied as an electron beam resist using a spin coater. After drying, the tip was exposed with an electron beam lithography system ELS-7700 (Elionix). After the exposure, the electron beam resist was developed. After development, 5 nm of titanium was deposited with a sputtering device, and 100 nm of gold was deposited. After removing the electron beam resist, photoresist S1818 (manufactured by Shipley Far East Co., Ltd.) was applied, dried, exposed and developed, 5 nm of titanium was deposited again, and 100 nm of gold was deposited. The photoresist agent was stripped by dipping in a stripping solution. In this way, an electrode was created.

  The shape of the protruding portion of the electrode was formed as shown in FIGS. 5 (B) and 5 (D).

When 5 mg of TPP · [Co (Pc) (CN) ₂ ] and 14 ml of acetonitrile were added to the electrolyte holding part and dissolved, a saturated electrolyte with undissolved residue was obtained. The electrode substrate was inserted into the substrate insertion portion, and the electrode substrate was fixed in place using a putty. A gold wire was passed between the upper part of the electrode and the copper wire of the electrolytic cell and fixed with silver paste. After combining the substrate holding part with the electrolyte holding part, a digital multimeter was connected to the copper wire. A voltage of 2.5 V was applied to the electrode and allowed to stand for 3 minutes. The temperature of the solution at this time was 23 ° C. The nanowires thus obtained were columnar with a length of 100 nm to 20 μm and a width of 50 nm to 3 μm. An SEM image (photograph) of the obtained transistor is shown in FIG. As can be seen from FIG. 6, in the transistor obtained in this example, the source electrode and the drain electrode (the left and right protrusions in the figure) are connected by a plurality of nanowires grown from each.

[Test Example 1]
The electronic characteristics of the transistor manufactured in Example 1 were measured. The result is shown in FIG. FIG. 7 is a graph showing the transistor characteristics of the transistor manufactured in Example 1. The horizontal axis represents voltage (Voltage), and the vertical axis represents current (μA). From FIG. 7, it can be seen that the transistor has excellent transistor characteristics with an ON / OFF ratio of about 80 at a gate voltage of 0V and 5V when the source-drain voltage is -3V.

  The transistor of the present invention can be used as a novel transistor in an electric circuit of a micromachine.

FIG. 1 is a schematic configuration diagram of a transistor of the present invention. FIG. 1A is a front view of a transistor according to the first embodiment of the present invention. FIG. 1B is a cross-sectional view taken along the line II of FIG. FIG. 2 is a schematic configuration diagram of a transistor of the present invention according to another embodiment different from the above. FIG. 2A is a front view of a transistor according to the second embodiment of the present invention. FIG. 2 (B) is a cross-sectional view taken along the line II of FIG. 2 (A). FIG. 3 is a schematic configuration diagram of a transistor of the present invention according to another embodiment different from the above. FIG. 3A is a front view of a transistor according to the third embodiment of the present invention. FIG. 3 (B) is a cross-sectional view taken along the line II of FIG. 3 (A). FIG. 4 is a schematic configuration diagram of a transistor of the present invention according to another embodiment different from the above. FIG. 4A is a front view of a transistor according to the fourth embodiment of the present invention. FIG. 4B is a cross-sectional view taken along the line II of FIG. FIG. 5 is a diagram illustrating an example of protrusions of the source electrode and the drain electrode. Fig. 5 (A) shows the tip parts parallel to each other, Fig. 5 (B) shows that the tip part of the protrusion has a shape that becomes thinner, and Fig. 5 (C) shows FIG. 5 (D) shows a shape having a plurality of comb-shaped protrusions at the tip. FIG. 6 is an SEM image of the transistor manufactured in Example 1 instead of the drawing. FIG. 7 is a graph showing the transistor characteristics of the transistor manufactured in Example 1.

Explanation of symbols

1 transistor
2 Source electrode
3 Drain electrode
4 Conductive nanowire
5 Insulation layer
6 Gate electrode
7 Board

Claims (11)

A source electrode, a drain electrode and a gate electrode;
A transistor in which the source electrode and the drain electrode are connected by a conductive nanowire.   2. The transistor according to claim 1, further comprising an insulating layer between the source and drain electrodes and the gate electrode. Each of the source electrode and the drain electrode has an opposing protrusion,
2. The transistor according to claim 1, wherein the protrusion has a plurality of comb-shaped protrusions at a tip portion.   2. The transistor according to claim 1, wherein the distance between the closest portions of the source electrode and the drain electrode is 1 nm to 100 μm.   2. The transistor according to claim 1, wherein the width of the conductive nanowire is 1 to 1 μm for one constituent molecule, and the length of the conductive nanowire is 1 nm to 500 μm. 2. The transistor according to claim 1, wherein the conductivity of the conductive nanowire is 1 S · cm ⁻¹ or more.   2. The transistor according to claim 1, wherein the conductive nanowire includes a crystal of an organic compound.   2. The transistor according to claim 1, wherein the conductive nanowire is made of a single crystal of an organic compound complex or a single crystal of an organic compound.   8. The transistor according to claim 7, wherein the crystal of the organic compound is composed of tetrathiotetracenes, dmit complexes, tetrathiafulvalene derivatives, porphyrin derivatives, phthalocyanine derivatives, or complexes thereof. The crystal of the organic compound is Cat _x [M (Pc) L ₂ ] _y (Cat is a cation, M is a metal, L is an axial ligand, Pc is phthalocyanine, and x and y are 0 or more. 8. The transistor according to claim 7, wherein the transistor is a partially oxidized salt crystal. The partially oxidized salt crystal of Cat _x [M (Pc) L ₂ ] _y is
11. The transistor according to claim 10, which is a tetraphenylphosphonium. [Co (Pc) (CN) ₂ ] ₂ crystal.