JP2006520925A5 - - Google Patents
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- Publication number
- JP2006520925A5 JP2006520925A5 JP2006505992A JP2006505992A JP2006520925A5 JP 2006520925 A5 JP2006520925 A5 JP 2006520925A5 JP 2006505992 A JP2006505992 A JP 2006505992A JP 2006505992 A JP2006505992 A JP 2006505992A JP 2006520925 A5 JP2006520925 A5 JP 2006520925A5
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- optical
- hollow core
- mems
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 description 58
- 239000000835 fiber Substances 0.000 description 43
- 239000000758 substrate Substances 0.000 description 34
- 238000003384 imaging method Methods 0.000 description 28
- 239000013307 optical fiber Substances 0.000 description 28
- 239000010410 layer Substances 0.000 description 26
- 239000011159 matrix material Substances 0.000 description 23
- 230000000694 effects Effects 0.000 description 17
- 230000008878 coupling Effects 0.000 description 15
- 238000010168 coupling process Methods 0.000 description 15
- 238000005859 coupling reaction Methods 0.000 description 15
- 239000011248 coating agent Substances 0.000 description 14
- 238000000576 coating method Methods 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 238000003491 array Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000001902 propagating effect Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000005459 micromachining Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 244000122871 Caryocar villosum Species 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- -1 silver halide Chemical class 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0306638.8A GB0306638D0 (en) | 2003-03-22 | 2003-03-22 | Optical routing device |
| PCT/GB2004/001213 WO2004083916A1 (en) | 2003-03-22 | 2004-03-22 | Optical routing device comprising hollow waveguides and mems reflective elements |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006520925A JP2006520925A (ja) | 2006-09-14 |
| JP2006520925A5 true JP2006520925A5 (https=) | 2010-03-18 |
| JP4478145B2 JP4478145B2 (ja) | 2010-06-09 |
Family
ID=9955330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006505992A Expired - Fee Related JP4478145B2 (ja) | 2003-03-22 | 2004-03-22 | 中空導波路およびｍｅｍｓ反射素子を備える光経路設定装置 |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP1606658B1 (https=) |
| JP (1) | JP4478145B2 (https=) |
| CN (2) | CN100397120C (https=) |
| AT (1) | ATE550686T1 (https=) |
| CA (1) | CA2518070A1 (https=) |
| GB (1) | GB0306638D0 (https=) |
| WO (1) | WO2004083916A1 (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7499615B2 (en) * | 2007-08-01 | 2009-03-03 | Hewlett-Packard Development Company, L.P. | System and methods for routing optical signals |
| US8811778B2 (en) | 2007-08-01 | 2014-08-19 | Hewlett-Packard Development Company, L.P. | Systems and method for routing optical signals |
| JP2010210782A (ja) * | 2009-03-09 | 2010-09-24 | Ricoh Co Ltd | マイクロミラー装置 |
| JP5183575B2 (ja) * | 2009-06-10 | 2013-04-17 | 日本電信電話株式会社 | 中空光導波路における磁場を用いた光路長調整方法及び装置 |
| US8885991B2 (en) * | 2009-12-21 | 2014-11-11 | Hewlett-Packard Development Company, L.P. | Circuit switched optical interconnection fabric |
| CN102483497B (zh) | 2010-01-06 | 2014-06-04 | 惠普发展公司，有限责任合伙企业 | 光学互连件 |
| EP2810383A4 (en) | 2012-01-31 | 2015-08-05 | Hewlett Packard Development Co | OPTICAL ARCHITECTURES, OPTICAL DISTRIBUTION MATRICES AND METHOD FOR THE PRODUCTION OF OPTICAL STRUCTURES |
| US20130272651A1 (en) * | 2012-04-11 | 2013-10-17 | Terrel Morris | Routing optical signals |
| WO2013154553A1 (en) * | 2012-04-11 | 2013-10-17 | Hewlett-Packard Development Company, L.P. | Routing optical signals |
| CN104216052A (zh) * | 2013-05-29 | 2014-12-17 | 鸿富锦精密工业（深圳）有限公司 | 光信号传输装置 |
| CN107678098B (zh) | 2016-08-01 | 2019-09-03 | 华为技术有限公司 | 光开关和光交换系统 |
| CN114815274B (zh) * | 2022-04-28 | 2023-02-14 | 厦门大学 | 一种局部可控近场的光学旋涡生成系统 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5387746A (en) * | 1977-01-13 | 1978-08-02 | Nec Corp | Optical path changer of hollow waveguide |
| US6212314B1 (en) * | 1998-07-08 | 2001-04-03 | Lucent Technologies | Integrated opto-mechanical apparatus |
| US6501869B1 (en) * | 2000-03-20 | 2002-12-31 | George Mason University | Optical switching system |
| US6839478B2 (en) * | 2001-05-01 | 2005-01-04 | Terraop Ltd. | Optical switching system based on hollow waveguides |
| CN1402070A (zh) * | 2002-09-30 | 2003-03-12 | 华中科技大学 | 温度不敏感型阵列波导光栅 |
-
2003
- 2003-03-22 GB GBGB0306638.8A patent/GB0306638D0/en not_active Ceased
-
2004
- 2004-03-22 CN CNB2004800078212A patent/CN100397120C/zh not_active Expired - Fee Related
- 2004-03-22 AT AT04722315T patent/ATE550686T1/de active
- 2004-03-22 EP EP04722315A patent/EP1606658B1/en not_active Expired - Lifetime
- 2004-03-22 CN CNA2008100952038A patent/CN101334503A/zh active Pending
- 2004-03-22 CA CA002518070A patent/CA2518070A1/en not_active Abandoned
- 2004-03-22 JP JP2006505992A patent/JP4478145B2/ja not_active Expired - Fee Related
- 2004-03-22 WO PCT/GB2004/001213 patent/WO2004083916A1/en not_active Ceased
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