JP2006504981A - Irradiation pattern tool and method of forming irradiation pattern tool - Google Patents

Abstract

The present invention includes an irradiation pattern tool that can be used to form more circular contacts than others, for example, where the array of contacts has a different pitch in the row and column directions of the array. Alternate phase shifts can provide well-defined contacts in small pitch (high density) directions. In order to make the circular shape of the contact opening more reliable, a rim shifter is added in a large pitch direction. A further feature of the present invention is that a sidelobe suppression pattern is provided between adjacent rims. The present invention also includes a method of forming an irradiation pattern tool.

Description

  The present invention relates to an irradiation pattern tool and a method for forming an irradiation pattern tool. More specifically, the present invention relates to an irradiation pattern tool in which a rim is formed close to a main shape pattern. The rim is configured to give the light passing there a phase rotation that differs by about 180 degrees from the phase rotation given to the wavelength of the light as it passes through the main shape pattern.

  Photolithographic techniques are commonly used to form integrated circuits on a semiconductor wafer. More specifically, irradiation light (for example, ultraviolet light) passes through the irradiation pattern tool and reaches the semiconductor wafer. An irradiation pattern tool is, for example, a photomask or reticle, of which the term “photomask” is conventionally understood as a mask that defines the pattern of the entire wafer, and the term “reticle” is a portion of the wafer. It is conventionally understood as a pattern tool that defines only a pattern. However, the terms “photomask” (or more generally “mask”) and “reticle” are often used interchangeably in modern terminology, and thus any term may be used as part or whole of a wafer. It can be said that the irradiation pattern tool for any of the above is shown.

  The illumination pattern tool has a light regulating region (eg, entirely opaque or attenuated / halftone region) and a light transmissive region (eg, a totally transparent region) formed in a desired pattern. For example, a grid pattern can be used to define conductive lines spaced in parallel on a semiconductor substrate. The wafer is provided with a layer of photosensitive resist, commonly referred to as photoresist. The irradiation light passes through the irradiation pattern tool, reaches the photoresist layer, and transfers the mask pattern to the photoresist. The photoresist is then stripped of either the exposed portion of the photoresist in the case of a positive photoresist or the unexposed portion in the case of a negative photoresist. The remaining patterned photoresist can be used as a mask on the wafer during subsequent semiconductor manufacturing processes such as ion implantation or etching the material on the wafer proximate to the photoresist.

  Advances in semiconductor integrated circuit characteristics are typically caused by the simultaneous reduction in the dimensions of integrated circuit devices and the reduction in the dimensions of the conductor elements connecting the integrated circuit devices. The demand for smaller integrated circuit devices further increases the requirement for reduced structural element dimensions and the precision and accuracy of reticle and photomask illumination patterns.

  The often required pattern to be applied to the photoresist is circular, in particular it is preferable to form a circle with a micron order diameter, and more preferably to form a circle with a submicron order diameter. desired. The circular shape has many application examples in the formation of a semiconductor circuit, for example, forming a cylindrical opening. There are difficulties in forming a reticle that can be patterned into a circle with a diameter on the order of microns or sub-microns. Typically, an ellipse is patterned rather than the desired circle, and such an ellipse requires more semiconductor occupancy area than a circle. It is desirable to develop an irradiation pattern tool that can be patterned into a circular shape at the micron and submicron level, or that can at least form a substantially circular shape more than that formed by existing methods.

  Other shapes besides circular are also desirable in various semiconductor processes. While it is generally desirable to accurately print the desired shape, it is often difficult. If the shape is not printed correctly, overlap occurs where it is not desired, and eventually leads to circuit shorts or other undesirable problems. It is therefore desirable to develop a photolithographic method and apparatus that can be used to accurately print a desired shape.

US Pat. No. 5,208,125 US Pat. No. 5,217,830

  The invention may be used in certain embodiments to form relatively circular contacts when the array of contacts has a different pitch in the column direction of the array and the row direction of the array. Includes an irradiation pattern tool that can. Alternating phase shifts can give well-defined contacts in the direction of small pitch (congestion). A rim shifter is added in the larger pitch direction to ensure the circular shape of the contact opening. In a further aspect of the invention, a sidelobe suppression pattern can be formed between adjacent rims. One of the features of the present invention is that an irradiation pattern can be formed and used by using a rim shifter in addition to the main shape pattern on the irradiation pattern tool instead of using an attenuated phase shift mask. . Furthermore, the rim of the rim shifter can be made large enough (equivalent to 0.1 micron or more under 1x) that can be easily manufactured by existing technology. In addition, if the rim width and length are changed appropriately, the side lobes can be reduced, thus avoiding “apparent contacts” (additional sub-resolution windows). .

  In one aspect, the present invention relates to an illumination pattern tool having a primary shape pattern with an outer edge and configured to provide a first phase rotation to the wavelength of light passing through the primary shape pattern. The illumination pattern tool also has a rim along a portion thereof, rather than along the entire outer edge of the main shape pattern. The rim is configured to impart a second phase rotation to the wavelength of light as the wavelength passes through the rim. The second phase rotation is different from about 170 ° to about 190 ° relative to the first phase rotation.

  In one aspect, the present invention relates to an irradiation pattern tool comprising an array of main shape patterns arranged in the row and column directions. The main shape pattern is configured to rotate the phase of the wavelength of light as light passes through the main shape pattern. The main shape pattern includes a first type that gives a first rotation to the phase and a second type that gives a second rotation to the phase. The second rotation is about 170 ° to about 190 ° different from the first rotation. The two types of main shape patterns alternate along the row direction of the array. A plurality of first rims are provided and are configured to impart a first rotation to the phase of the wavelength of the light. The first rim is provided along the outer edge of the second type main shape pattern. The plurality of second rims are configured to give a second rotation to the phase of the wavelength of light. The first and second rims are provided along the column direction of the array.

  The present invention also relates to a method for forming an irradiation pattern tool.

  Hereinafter, the details of the present invention will be described with reference to the accompanying drawings.

  As one aspect of the present invention, the present invention includes a novel irradiation pattern tool structure and various methods for forming the irradiation pattern tool. An exemplary irradiation pattern tool structure included in the present invention will be described with reference to FIGS. 1-5, 8, 59-63.

  Referring first to FIG. 1, the irradiation pattern tool structure 10 of the first embodiment comprises an array of main shape patterns 12 arranged in columns extending in the vertical direction and rows extending in the horizontal direction. The main shape pattern 12 is divided into a set of specific types. Specifically, some of the primary shape patterns 12 are first type 14 (or referred to herein as first primary shape patterns), and others are second type 16 (or second primary shape patterns herein). Say). The first type main shape pattern rotates the phase of the wavelength of light in the first direction as the wavelength passes through it, while the second type main shape pattern emits light as the wavelength passes through it. Is rotated in the second direction. The second direction can be about 170 ° to about 190 ° different from the first direction, about 180 ° different from the first direction, or exactly 180 ° different from the first direction. The light passing through the main pattern 12 of the irradiation pattern tool 10 is finally used to form a main shape on the photoresist exposed to light after it passes through the irradiation pattern tool 10. The main shape formed in the photoresist may be any desired pattern. In special applications, the main shape is substantially circular and can be, for example, an exact circle within the measurement error.

  In the illustrated embodiment, the primary shape patterns of the first and second types have an alternating relationship along the row direction of the array, but do not change from each other along the column direction of the array.

  Each of the main shape patterns has an outer edge. In FIG. 1, the outer edge of the first main shape pattern 14 is indicated by reference numeral 18, and the outer edge of the second main shape pattern 16 is indicated by reference numeral 20. The preferred outer edges 18, 20 shown are rectangular in shape, and in the particular embodiment of FIG. The outer edge 18 of the first main shape pattern 14 is a first pair of opposite sides 22 and a second pair of opposite sides 24, and the outer edge 20 of the second main shape pattern 16 is a first pair of opposite sides 26. And a second pair of opposing sides 28.

  A plurality of first rims 30 are formed along the opposing sides 22 of the first main shape pattern 14, and a plurality of second rims 32 are formed along the opposing sides 26 of the second main shape pattern 16. The first rim 30 preferably differs by about 170 ° to 190 ° from the phase rotation provided by the first main shape pattern 14 with respect to the wavelength of light passing through the rim, more preferably provided by the first main shape pattern 14. Provides a phase rotation that differs approximately 180 ° from the phase rotation provided, and even more preferably, exactly 180 ° different from the phase rotation provided by the first main shape pattern 14. In contrast, the second rim 32 preferably differs from the phase rotation provided by the second main shape pattern 16 with respect to the wavelength of light passing through the rim, preferably about 170 ° to 190 °, more preferably the first A phase rotation is provided that is approximately 180 ° different from the phase rotation provided by the two main shape patterns 16, and even more preferably exactly 180 ° different from the phase rotation provided by the second main shape pattern 16.

  From the above description, the present invention relates to an embodiment in which the phase rotation by the second main shape pattern 16 is exactly opposite to the phase rotation by the first main shape pattern 14, and the phase rotation by the second rim 32. It is apparent that includes an embodiment in which the phase rotation by the first main shape pattern 14 is equal to the phase rotation by the first rim 30 and the phase rotation by the second main shape pattern 16 is equal.

  For the purposes of understanding the specification and claims, the relative rotation direction of the phase described above includes the direction already described, in addition to that described above between (n × 360 °) + phase rotation. It should be understood to encompass any direction corresponding to a relative correspondence value. Here, n is an integer. For example, if the second type primary shape pattern is stated to produce a phase rotation that is 180 ° different from the rotation due to the primary type primary shape pattern, then the actual phase rotation difference is It must be understood that they are 180 °, 540 °, 900 °, and the like. Expressing this concept in other ways, it can be said to be a net phase difference as described in the specification and noted in the claims, rather than an overall phase difference.

  The effect of the rims 30 and 32 is that the image shape of the light passing through the main shape patterns 14 and 16 can be changed, and more specifically, the light is made more circular than when the rims 30 and 32 are not provided. It is possible to do. In the illustrated embodiment, the main shape patterns 14, 16 have a narrower pitch spacing in the direction along the array row than in the direction along the column of the array, and the rim is only in the long pitch direction (ie, Only in the direction along the column of the array). In other words, the rim is provided only on a portion of the periphery of such an outer edge, rather than all around the outer edge of the main shape pattern. By doing so, the production of the illustrated structure can be simplified. That is, it is easier to provide the rim in a wide space in the long pitch direction than in a narrow space in the short pitch direction. In some cases, there is not enough room to provide a rim in the short pitch direction. In addition, the rim formed only in the long pitch direction substantially improves the image produced by the main shape pattern in order to have a better circular shape, and sufficiently suppresses it from becoming an ellipse without it. I found out that

  In the embodiment of FIG. 1, adjacent main shape patterns along the column are separated from each other by a distance “D”, and individual rims extend over such distance between the main shape patterns. .

  Referring to FIG. 2, an irradiation pattern tool 40 of the second embodiment is shown. Where appropriate, the same reference numbers used to describe the tool 10 of FIG. That is, the tool 40 also includes the first main shape pattern 14, the second main shape pattern 16, the first rim 30, and the second rim 32. Also, the main shape patterns are arranged in an array having columns and rows, and there is a distance “D” between adjacent main shape patterns along the columns of the array. The distance “D” of the tool 40 may be the same as or different from the distance “D” of the tool 10 of FIG. In the exemplary embodiment, the distance “D” of the tool 40 is greater than the distance of the tool 10. In either case of the tool 10 of FIG. 1 or the tool 40 of FIG. 2, the distance “D” may be approximately equal to the size of the main shape pattern that is ultimately formed on the tool.

  The rims 30, 32 do not extend over the entire distance between adjacent main shape patterns along the column direction of the array, but rather the adjacent rims along the column of the array are only a distance "E" from each other. is seperated.

  In the illustrated embodiment, sidelobe suppression patterns 40, 42 are provided between adjacent rims along the columns of the array. The side lobe suppression pattern 40 is of a different type from the side lobe suppression pattern 42. Specifically, the sidelobe suppression pattern 40 causes the wavelength of light passing therethrough to rotate by about 170 ° to about 190 ° with respect to the rotation provided by the rim 30 on each side of the pattern 40. Preferably it is comprised. In contrast, the sidelobe suppression pattern 42 rotates the wavelength of light passing therethrough by about 170 ° to about 190 ° relative to rotation by the rim 32 on the side of the pattern 42. It is preferable to configure.

  Since the rim 32 preferably rotates the wavelength of light by about 170 ° to about 190 ° with respect to the rotation provided by the rim 30, the sidelobe suppression pattern 42 does actually reduce the wavelength of light by approximately the same amount as the rim 30. It should be understood that the side lobe suppression pattern 40 actually rotates the wavelength of light by approximately the same amount as the rim 32. Preferably, the rotation by the sidelobe suppression pattern 40 is about 180 ° or exactly 180 ° relative to the rotation by the rim 30, and the rotation of light by the sidelobe suppression pattern 42 is relative to the rotation by the rim 32. About 180 ° or exactly 180 °.

  The difference between the sidelobe suppression patterns 40 and 42 relative to the main shape patterns 14 and 16 is that the sidelobe suppression patterns 40 and 42 are finally printed on the photoresist exposed to light passing through the tool 40. It does not support images. Instead, the sidelobe suppression patterns 40 and 42 have only a function of changing an image formed by light passing through the main shape patterns 14 and 16. The pattern that produces the individual distinct images is due to the main shape pattern, not the sidelobe suppression pattern.

  The sidelobe suppression patterns 40 and 42 can make the image defined by the light passing through the main shape patterns 14 and 16 into a circular shape having a better shape than the image without the sidelobe suppression pattern. Therefore, it can be said that it is more preferable to use the embodiment illustrated by the tool 40 instead of the embodiment illustrated by the tool 10 of FIG. However, the introduction of sidelobe suppression patterns 40, 42 increases the complexity of the fabrication of the illumination pattern tool, so that under certain conditions, the embodiment illustrated in tool 10 may be more preferred.

  Referring to FIG. 3, an irradiation pattern tool 50 of the third embodiment is shown. In FIG. 3, where appropriate, the same reference numerals used to describe the embodiment of FIGS. 1 and 2 are used to describe the tool 50. That is, the tool 50 also includes the first main shape pattern 14, the second main shape pattern 16, the first rim 30, and the second rim 32. Further, as in the case of the above two embodiments, a pair of first rims is associated with each of the first main shape patterns, and a pair of second rims is associated with each of the second main shape patterns. Yes.

  The tool 50 further includes a first type sidelobe suppression pattern 40 and a second type sidelobe suppression pattern 42. The first type side lobe pattern is provided between the first rims along the column direction of the main shape pattern array, and the second type side lobe pattern is the second rim along the column direction of the main shape pattern array. Between. The distance between the main feature patterns along the columns of the array is “D” and the distance between adjacent rims along the columns of the array is “E”. In contrast to the tool 40 of FIG. 2, the sidelobe suppression pattern of the tool 50 does not extend over the entire distance “E” between adjacent rims along the columns of the main shape pattern.

  Another exemplary embodiment of an illumination pattern tool is shown as tool 60 in FIG. As long as it is appropriate, the reference numerals used in FIG. 4 are the same as those in FIGS. 1-3. The embodiment of FIG. 4 is similar to the embodiment of FIG. 3 except that there is no sidelobe suppression means (reference numbers 40, 42 in FIG. 3).

  Each embodiment of FIGS. 1-4 shows an application example in which the first and second main shape patterns alternate with each other along the row direction of the array. It should be understood that other embodiments alternating along the way are also included. The exemplary device is illustrated as tool 70 in FIG. Reference numerals in FIG. 5 are the same as those used to describe the embodiment of FIGS. 1-4, as appropriate. Accordingly, the tool 70 has the first main shape pattern 14 and the second main shape pattern 16, respectively, and also has the first rim 30 and the second rim 32, respectively.

  The distance between adjacent main shape patterns along a column of the main shape pattern array is “D”, and in the illustrated embodiment, the rim extends over the entire distance “D”. Accordingly, the first rim 30 abuts with the second rim 32 at an intermediate position of the distance “D”. However, the present invention also encompasses other embodiments in which the rim does not extend across the distance “D” but is separated by a space corresponding to, for example, the space of FIGS. Should be understood. In such an embodiment, sidelobe suppression means can optionally be provided between adjacent rims along the column direction of the array. However, in the case of an embodiment in which adjacent rims are different from each other, it may be desirable to avoid the use of sidelobe suppression means.

  FIGS. 59-63 illustrate additional illumination pattern tools 800, 900, 1000, 1100, 1200, respectively, that can be formed according to various aspects of the present invention. 59-63 are assigned the same reference numbers as those used to describe the configuration of FIGS. 1-5.

  6 and 7 illustrate the advantages obtained by using the method of the present invention over prior art methods. Specifically, FIG. 6 includes a first main shape pattern 14 and a second main shape pattern 16 (the reference numbers used to describe FIGS. 1-5 are used as they are), but at the outer edge of the main shape pattern. A prior art irradiation pattern tool 80 without a rim along is shown. FIG. 6 also shows a graph 82 representing a simulation image formed by light passing through the main shape pattern. The graph 82 is obtained when the spatial coherence (sigma) is assumed to be 0.35. It can be seen that the simulation image is not a desired circular shape but an ellipse. On the other hand, FIG. 7 shows a graph 86 showing a simulation image that can be expected when the spatial coherence value is 0.35 together with the irradiation pattern tool 60 of FIG. The graph of FIG. 7 shows that the illumination pattern tool of the present invention can form an image that is much closer to the desired circular shape than that obtained with prior art illumination pattern tools. A lithographic mask typically has both a relatively dense pattern and a relatively low density (or isolated) pattern. An isolated pattern can also be printed with a low sigma value (0.35) by the prior art method, but a high density pattern has a problem with the prior art method.

  Various methods can be used to form the illumination pattern tool encompassed by the present invention. Several exemplary methods are described with reference to FIGS. 9-58. Before describing such a method, it is useful to clarify the reference frame for the exemplary illumination pattern tool of the present invention. FIG. 8 shows a small piece portion of an exemplary illumination pattern tool 100. Tool 100 is described using the same reference numbers used to describe the embodiments of FIGS. 1-5. The tool 100 includes a first main shape pattern 14, a second main shape pattern 16, and a first rim 30 and a second rim 32. The first rim 30 is provided close to the first main shape pattern 14, and the second rim 32 is provided close to the second main shape pattern 16. The second main shape pattern 16 and the first rim 30 preferably rotate the wavelength of the light by about 180 ° with respect to the rotation that occurs when the light passes through the first main shape pattern 14. Further, the second rim 32 rotates the light by about 0 ° with respect to the rotation caused by the light passing through the first main shape pattern 14 and the rotation caused by the light passing through the second main shape pattern 16. It is preferred to rotate the light by about 180 ° relative to.

  The broken line 2-2 represents the cutting location of the first main shape pattern 14 and the pair of first rims 30, and the second cutting line 4-4 represents the cutting location of the second main shape pattern 16 and the pair of second rims 32. It is defined as a thing. 9-58 are oriented with respect to FIG. 8 so that each shows two pieces of an irradiation pattern tool. Specifically, the left small piece portion corresponds to the breaking line 2-2, and the right small piece portion corresponds to the breaking line 4-4. FIGS. 9-58 correspond to the various processes or steps that can be used to form the illumination pattern tool, and therefore most of the drawings are for each process except that the process of FIG. 8 is complete. This corresponds to the configuration showing the stages.

  The method of the first embodiment for forming the irradiation pattern tool will be described with reference to FIGS. 9-13. Referring initially to FIG. 9, the structure 100 is shown as a preliminary stage. More specifically, the pair of small piece portions 102 and 104 of the structure 100 are shown as small piece portions corresponding to a cross section along the cutting line 2-2 and the cutting line 4-4 in the description of FIG.

  The pieces 102 and 104 have a base 110 that preferably transmits light of the desired wavelength. The desired wavelength is, for example, light having a wavelength in the ultraviolet wavelength region. The actual desired wavelength of light is a wavelength suitable for photoresist patterning, and such wavelength will vary with the composition of the photoresist. The transparent base material 110 preferably rotates the phase of the desired wavelength of light as it passes through the material 110. The base 110 is made of, for example, one or more of a solid solution made of quartz, calcium fluoride, barium fluoride, and one or more of calcium fluoride, strontium fluoride, and barium fluoride.

  A mask 112 is provided on the base 110, which is preferably opaque to the desired wavelength of light. In the illustrated embodiment, the opaque mask 112 is physically pressed against the base 110. In the claims, the mask 112 may be described as an opaque layer and the base 110 as a transparent material to show the relative transmittance of the mask 112 and the base 110 for the desired wavelength of light. However, unless otherwise stated, the opaque layer 112 need not have 0% transmission for light of the desired wavelength, and unless otherwise stated, the base 110 will transmit light of the desired wavelength. It is not necessary to have 100% transmission. In the illustrated embodiment, the opaque layer 112 is made of chrome and blocks more than 99% of the desired wavelength of light passing there. On the other hand, the base layer 110 is basically made of quartz or quartz, and allows transmission of 90% or more of light having a desired wavelength.

  A patterned photoresist mask 114 is provided over regions 102 and 104. The patterned mask 114 has a thick region 116 and a thin region 118. The photoresist mask layer 114 is made of either a positive photoresist or a negative photoresist. Patterned mask 114 has an opening 120 therethrough and associated with piece portion 102 and openings 122 and 124 therethrough associated with piece portion 104.

  Formation of the illustrated photoresist mask configuration can be accomplished by typical photolithographic patterning techniques in which photoresist material is provided over the entire layer 112 and then exposed to patterned illumination light. The portions of the photoresist that are exposed to the irradiating light have different stability to further processing conditions than the portions that are not exposed to the irradiating light. For example, a portion of a photoresist that has been exposed to irradiation light has a different solubility in a solvent than a portion that has not been exposed to irradiation light. Openings 120, 122, and 124 are formed by exposing the photoresist to processing conditions for removing desired portions. Furthermore, if the amount of exposure is changed in a direction across the photoresist during photolithographic patterning, a portion of the remaining photoresist (portion 116) can be thicker than the other portion (118).

  The piece portion 102 has a primary shape pattern location 130 defined therein and a rim location 132 defined adjacent to the primary shape pattern location. The rim location 132 can be considered the material under the thinned portion 118 of the photoresist 114, and the main feature pattern location 130 is the material under the opening 120 through the patterned photoresist mask 114. Can think.

  The piece portion 104 has a primary shape pattern location 134 defined therein and a rim location 136 defined adjacent to the primary shape pattern location. The primary shape pattern location 134 can be considered the material under the thinned photoresist 118, and the rim location 136 can be considered the material under the openings 122, 124. Hereinafter, for convenience of explanation, the main shape pattern position 130 can be referred to as a first main shape pattern position, and the main shape pattern position 134 can be referred to as a second main shape pattern position. Further, it can be said that the rim position 132 is a first rim position, and the rim position 136 is a second rim position.

  Referring to FIG. 10, openings 120, 122, 124 extend through the opaque material 112 into the base 110. In embodiments where the opaque material 112 is made of chromium, a suitable etch for penetrating the opaque material is a chlorine-based plasma etch, and in embodiments where the base 110 is made of quartz, a suitable etch leading into the base. The etching is a fluorine-based plasma etching.

  Referring to FIG. 11, photoresist 114 is exposed to conditions that thin the photoresist and ultimately remove some of the photoresist. Exposure to such conditions completely removes the already thinned portion 118 (see FIG. 10) while leaving the portion 116 (currently thinned after exposure to processing conditions) on the opaque material 112. To do. Removal of the portion 118 exposes a portion 140 of the opaque material 112 in the first rim location 132 and a portion 142 of the opaque material 112 in the second primary shape pattern location 134. Suitable conditions for removing the photoresist are, for example, exposure of the photoresist to a solvent and / or ashing of the photoresist.

  Referring to FIG. 12, exposed portions 140 and 142 (see FIG. 11) of opaque material 112 are removed by selective etching of opaque material 112 relative to base 110. The selective etching of the chromium material 112 with respect to the quartz base 110 is, for example, a chlorine based plasma etching.

  Referring to FIG. 13, the photoresist 114 (see FIG. 12) is removed leaving a structure 144 for the small piece portion 102 and a structure 146 for the small piece portion 104. The structure 144 has a first main shape pattern in a position 130 that is recessed in the base 110 and a first rim in a position 132 that is not recessed into the base 110. The recess in the location 130 must be deep enough in the material of the base 110. By doing so, the desired wavelength of the light passing through the position 130 has a phase that is changed from about 170 ° to about 190 ° with respect to the phase of the light passing through the rim position 132. The structure 146 has a second main shape pattern at a position 134 that is at the same level as the first rim at the position 132. The structure 146 also has a second rim 136 at the same high and low level in the base 110 as the first main shape pattern at the position 130 of the structure 144. Therefore, when light of a desired wavelength passes through the structures 144 and 146, the phase of the light passing through the first main shape pattern 130 is the same as the phase of the light passing through the second rim position 136, and the first With respect to the light passing through the rim position 132 and the second main shape pattern position 134, the phase is changed by about 170 ° to about 190 °. In particular embodiments, the phase rotation imparted to the wavelengths of light passing through regions 130 and 136 relative to regions 132 and 134 is either about 180 ° or exactly 180 °.

  The structures 144 and 146 have a lower surface 150 and an upper surface 152. Typically, when the structure is incorporated into a photolithographic apparatus as a reticle or photomask, light enters from the lower surface 150, passes through the base 110, and exits from the upper surface 152. Accordingly, the structures 144 and 146 will typically be inverted relative to the illustrated configuration when they are incorporated into a photolithographic apparatus. Rays 160, 162, 164, 166, 168, and 170 are from the lower surface 150 of the base 110 at various positions 130, 132, 134, and 136 to show the phase changes that occur as light passes through the base 110. Entering and exiting from the top surface 152 is shown.

  Structures 144 and 146 correspond to the final structure shown in FIG. The structure 144 has a first rim and a first main shape pattern, and the structure 146 has a second rim and a second main shape pattern. Structures 144 and 146 can also correspond to any of the final major shape pattern structures of FIGS. 1-5 and 59-63. Also, although lobe suppression means is not shown in the structure of FIG. 13, it should be understood that such lobe suppression regions can be incorporated into the processes of FIGS. 9-13.

  Another method for forming an irradiation pattern tool according to the present invention will be described with reference to FIGS. The method of FIGS. 14-21 is particularly beneficial when the rim to be formed is narrow and etching is difficult with the process described in the embodiment of FIGS. 9-13. In describing the embodiment of FIGS. 14-21, the same reference numerals as used to describe the embodiment of FIGS. 9-13 will be used where appropriate.

  Referring to FIG. 14, the structure 200 is shown as having small pieces 102 and 104. Each piece portion 102 and 104 has a base 110, an opaque material 112 and a photoresist 114. Further, the photoresist 114 has a thick portion 116 and a thin portion 118. The first main shape pattern 130 is defined relative to the small piece portion 102, and the first rim position 132 is defined as adjacent to the first main shape pattern position 130. A second main shape pattern 134 is defined relative to the piece portion 104 and a second rim position 136 is defined adjacent to the first main shape pattern position 134.

  The small piece portion 104 of FIG. 14 differs from that of FIG. 9 in that there is an opening 202 extending to the second main shape pattern position 134 but no opening extending to the second rim position 136. However, the piece portion 102 of FIG. 14 is identical to the piece portion 102 of FIG. 9 and thus has an opening on the first main shape pattern location 130.

  Referring to FIG. 15, the openings 120 and 202 are extended into the base 110.

  Referring to FIG. 16, photoresist 114 is exposed to suitable conditions to remove thinned portion 118 (see FIG. 15), leaving thickened portion 116 on layer 112. Removal of portion 118 exposes a portion 140 of opaque material 112 in first rim location 132 and a portion 204 of opaque material 112 in second rim location 136.

  Referring to FIG. 17, exposed portions 140 and 204 (see FIG. 16) of opaque material 112 have been removed.

  Referring to FIG. 18, the photoresist 114 (see FIG. 17) has been removed.

  Referring to FIG. 19, the protective mask 210 is formed on the first main shape pattern position 130 and the first rim position 132 of the region 102, and the protective mask 210 extends on the peripheral portion of the region 104. It is shown. The mask 210 is made of, for example, a photoresist. The process of FIG. 18 is optional, and the portion 116 of the photoresist 114 (see FIG. 17) may remain on the structure 100 while the protective mask 210 is being formed. The extension of the mask 210 onto the region 104 is optional and is shown to show that the illustrated process allows the remaining mask 210 to be on the region 104 during the subsequent process. The alignment of the mask material 210 is not very stringent in the sense that the mask does not need to be strictly aligned with the rim position of the region 102 or the main shape pattern position, rather such You just need to cover the position.

  Referring to FIG. 20, the opening in region 104 is extended into base 110 by etching. By doing so, the second main shape pattern 134 is extended into the base, and the second rim position 136 is extended into the base.

  Referring to FIG. 21, the protective mask 210 (see FIG. 20) is a final consisting of a first main shape pattern at position 130, a first rim at position 132, a second main shape pattern at position 134, and a second rim at position 136. It has been removed, leaving the structural structure. Preferably, light of a desired wavelength passing through the first rim 132 and the second main shape pattern 134 has a phase rotation of 360 ° (corresponding to 0 ° net phase rotation), and the first main shape pattern 130 and the second main shape pattern 134 The light passing through the rim position 136 has a phase rotation of 180 ° with respect to the light passing through the first rim position 132 and the second main shape pattern position 134. The structure of FIG. 21 can thus correspond to either the final structure of FIG. 8 or the structures of FIGS. 1-5 and 59-63.

  The method of FIGS. 9-21 is relatively simple in that the process begins with a simple substrate (typically quartz) under an opaque material (typically made of chromium). However, the present invention also encompasses more complex methods such as a method in which the substrate is composed of a number of elements. An example of such a method will be described with reference to FIGS. 22-31. In referring to FIGS. 22-31, the same reference numerals as used to describe FIGS. 9-21 will be used where appropriate.

  Referring to FIG. 22, the structure 300 has a small piece portion 102 and a small piece portion 104. The pieces 102 and 104 have a base 110 made essentially of quartz or made only of quartz. Structures 102 and 104 also have a layer 112 of opaque material provided over base 110. Layers 302 and 304 are provided between the layer 112 and the base 110. Layer 302 can be a light-attenuating and / or phase-shifting material, with exemplary materials consisting of molybdenum and silicon, such as molybdenum silicide. Other exemplary materials include titanium nitride, tantalum nitride, tantalum oxide, tantalum silicide, zirconium oxide silicon, chromium fluoride. Layer 304 comprises a phase shift layer such as silicon dioxide or quartz, but it is preferred that the layer 302 has less light attenuation for the desired wavelength than layer 302. In particular embodiments, the light attenuating layer 302 can include one or more of silicon, chromium, molybdenum, and aluminum, and the phase shift layer 304 can be one of silicon, oxygen, and nitrogen. One or more can be included. In certain embodiments, one or both of the phase shift layers is one or more of calcium fluoride, barium fluoride, magnesium fluoride, and / or calcium fluoride, strontium fluoride, barium fluoride. It can consist of a solid solution consisting of As a particular aspect of the present invention, layer 302 and layer 304 can be considered a first phase shift layer and a second phase shift layer, respectively.

  Structure 300 may include other materials in addition to the illustrated materials, such as one or more boundaries between layers 110 and 302, between layers 302 and 304, and between layers 304 and 112. The portion can include a thin anti-reflective layer.

  A first main shape pattern position 130 is defined in the region 102 together with the first rim position 132, and a second main shape pattern position 134 is defined in the region 104 along with the second rim position 136.

  A patterned photoresist 310 is formed over regions 102 and 104. Patterned photoresist 310 has three different thickness portions on region 102. Specifically, the thinnest part 312 on the first main shape pattern position 130, the intermediate thickness part 314 on the second rim position 132, and the thickest part outside the rim position and the first main shape pattern position. 316. Further, the photoresist 310 has two different thickness portions above the region 104. Specifically, the second main shape pattern position 134, the thickest part 316 outside the second rim position 136, and the intermediate thickness part 318 on the second rim position 136. The intermediate thickness portion 318 is thicker than the intermediate thickness portion 314 on the first rim location 312. An opening 320 extends through the photoresist 310 to expose a portion of the opaque layer 112 in the second major shape pattern 134. Patterned resist 310 can be formed by exposing the photoresist material to four different amounts of radiation before developing the resist in a solvent or other suitable condition.

  Referring to FIG. 23, the structure 300 has been exposed to etching conditions that remove the opaque material 112 from the second major shape pattern location 134. A suitable etching condition for removing the chromium-containing opaque material 122 is anisotropic etching using a chlorine-based plasma.

  Referring to FIG. 24, the opening 320 is extended through the phase shift layer 304 to the light attenuating layer 302 by appropriate etching. An exemplary etch is a fluorine-based plasma etch. The selectivity of the layer 304 relative to the layer 302, or vice versa, can be adjusted by changing the etchant material present in the reaction chamber, the pressure in the reaction chamber, the high frequency power, and the like.

  The photoresist 310 associated with region 102 includes a thinnest region 312 comprising a first step, an intermediate thickness region 314 comprising a second higher step, and a region 316 comprising a third even higher step. It can be considered to have a step pattern. The photoresist of the structure 300 can be exposed to a solvent (or subjected to other suitable processing) to remove the thinnest step 312 and reduce the thickness of steps 314 and 316. After such removal, a portion of the opaque layer 112 is exposed in the first major shape pattern location 130. FIG. 25 shows the structure 300 after a portion of such opaque material 112 has been removed such that a portion of the layer 304 is exposed in the first major shape pattern location 130.

  Referring to FIG. 26, the structure 300 is essentially not selective with respect to the materials 304 and 302, thus extending the opening on the first primary shape pattern location 130 through the material 304, while The opening on the second major shape pattern location 134 is exposed to an etch that extends through the material 302.

  Referring to FIG. 27, after exposure to a suitable process for removing a portion of photoresist 314 (see FIG. 26) from above the rim location to expose a portion of opaque material 112, and further, The structure 300 is shown after an exposed portion of the opaque material 112 has been removed. Accordingly, a portion of layer 304 is exposed in first rim location 132.

  Referring to FIG. 28, the wafer structure 300 is shown after being exposed to an etch that is relatively insensitive to the material of the base 110 and the layers 302,304. Thus, the etching extends through the layer 304 at the first rim location 132 and extends into the exposed portion of the base 110 at the second major shape pattern location 134. Therefore, the etching is simultaneously performed at the first rim position 132, the second main shape pattern position 130, and the second main shape pattern position 134.

  Referring to FIG. 29, the photoresist 310 reduces the thickness of the photoresist, thus removing the photoresist from over a portion of the opaque material 112 in the second rim location 136, but with the strip portions 102 and 104. Other areas of the substrate are exposed to a solvent that leaves the photoresist (or other suitable processing conditions). Specifically, the thick portions 316 of the photoresist are not removed.

  Referring to FIG. 30, the exposed portion of layer 112 in second rim location 136 has significant selectivity for the material of layer 112 over the exposed material of base 110 and layers 302 and 304. It has been removed by etching. If material 112 is chromium, a suitable etch can utilize a chlorine-based plasma.

  Referring to FIG. 31, the remaining photoresist 310 (see FIG. 30) has been removed.

  The structure of FIG. 31 can be considered to have a first main shape pattern at position 130, a first rim at position 132, a second main shape pattern at position 134, and a second rim at position 136. The second main shape pattern at position 134 preferably provides a phase rotation of the desired wavelength that is approximately 180 ° different from the phase rotation by the first main shape pattern at position 130. In addition, the first rim 132 preferably rotates the wavelength of light, which is approximately 180 ° different from the phase rotation by the first main shape pattern at the position 130. Furthermore, it is preferable that the second rim 136 rotates the wavelength of the light so that the light is 180 degrees out of phase with the light passing through the second main shape pattern at the position 134. Accordingly, the wavelength of light passing through the rim at position 136 is preferably in phase with the light passing through the first main shape pattern at position 130, and the light passing through the rim at position 132 is second in position 134. It is preferable to be in phase with the light passing through the main shape pattern.

  The structure 300 of FIG. 31 can correspond to any configuration described in relation to the irradiation pattern tool of FIGS. 1-5, 8 and 59-63. Specifically, the structure 300 of FIG. 31 has a first main shape pattern having a pattern etched through the first phase shift layer 302, the second phase shift layer 304, and the opaque layer 112 to the upper surface of the base 110. Consider having a second main shape pattern at location 134 with a pattern etched at location 130 and through first phase shift layer 302, second phase shift layer 304 and into base 110. Can do. In addition, the structure 300 includes a first rim having a pattern etched through the second phase shift layer 302 and the opaque layer 112 to the upper surface of the first phase shift layer 302 at the location 132 and an opaque layer. 112 can be considered to have a second rim at location 136 having a pattern etched through to 112 and to the top surface of the second phase shift layer 304.

  As long as the embodiment of FIG. 31 is used to form one or more of the illumination pattern tools of FIGS. 1-5, 8 and 59-63, the first rim is on the opposite side of the first main shape pattern. Preferably extending along the entire circumference of the first main shape pattern, and the second rim extends along opposite sides of the second main shape pattern, but the entire circumference of the second main shape pattern. It is preferable not to extend over. However, it should be understood that the method described herein can also be used in applications where the rim is formed around the entire perimeter of the main shape pattern.

  Another embodiment of the present invention will be described with reference to FIGS. Referring first to FIG. 32, the structure 400 has a base 110 and an opaque layer 112. Between the base 110 and the opaque layer 112 is an optical attenuation and / or reflection layer 402 and a phase shift layer 404. The phase shift layer 404 can be made of, for example, silicon dioxide or quartz, and the layer 402 can be made of, for example, molybdenum silicide, titanium nitride, tantalum silicide, zirconium oxide silicon, and / or chromium fluoride. Layer 404 preferably allows at least 90% transmission of operating wavelength light passing through structure 400, and more preferably allows about 100% transmission. Also, the total thickness of layers 402 and 404 are such that they have a phase rotated by 360 ° (or multiples thereof) when passing through layers 402 and 404 where the operating wavelength of light is combined. Is preferred. Layer 404 can provide 180 ° of the total amount of phase shift obtained from combined layers 402 and 404. Alternatively, layer 404 can contribute only to some different value of the total phase shift amount.

  Photoresist 410 is provided on the small pieces 102 and 104 of the structure 400. The photoresist 410 is patterned to have a thick portion 412 and a thinner portion 414 above the small piece portion 102 and a thick portion 412 and a thinner portion 414 above the small piece portion 104. The Further, the photoresist defines an opening 416 extending therethrough to expose a portion of the opaque material 112 with respect to the small piece portion 102 and a portion of the opaque material 112 with respect to the small piece portion 104. To expose the portion, another opening 418 is defined extending therethrough.

  A first major shape pattern 130 is defined in the opening 416 associated with the piece portion 102 and a first rim location 132 is defined by the thin photoresist portion 414 associated with the region 102. A second major shape pattern 134 is also defined in the opening 418 associated with the piece portion 104, and a second rim location 136 is defined by the thin photoresist portion 414 associated with the region 104.

  Referring to FIG. 33, openings 416 and 418 extend through opaque material 112 and phase shift layers 402 and 404 into base 110. Accordingly, the first main shape pattern position 130 and the second main shape pattern position 134 are extended into the base 110.

  Referring to FIG. 34, the photoresist 410 is exposed to a solvent (or other suitable) while removing the thin portion 414 (see FIG. 33) while leaving the thick portion 412 (but thinning). Processing conditions). Doing so exposes a portion of the opaque material 112 within the first rim location 132 and the second rim location 136.

  Referring to FIG. 35, the exposed portion of opaque material 112 (see FIG. 34) is removed to extend first and second rim locations 132, 136 to the upper surface of layer 404.

  Referring to FIG. 36, a protective mask 420 is formed above the small piece portion 102. More specifically, the protective mask 420 is formed to protect the first rim position 132 and the second main shape pattern 130. A portion of the protective mask 420 is shown extending above the small piece portion 104. The extension of the mask 420 onto the small piece portion 104 is not particularly related to further processing. The mask 420 can be made of, for example, a photoresist. In the illustrated embodiment, the photoresist 410 (see FIG. 35) has been removed prior to the formation of the protective mask 420. However, it is to be understood that the present invention encompasses other embodiments in which the protective mask 420 is formed over the resist 410 while the photoresist 410 is left in place.

  Referring to FIG. 37, etching is used to extend the second major shape pattern location 134 deeper in the base and to extend the second rim location 136 into the phase shift layer 404. For appropriate etching, fluorine-based plasma can be utilized.

  Referring to FIG. 38, the protective mask 420 (see FIG. 37) has been removed. The configuration after removal of the protective mask has a first main shape pattern at position 130, a second main shape pattern at position 134, a first rim at position 132, and a second rim at position 136. The light passing through the first main shape pattern is preferably in phase with the light passing through the second rim, and the light passing through the second main shape pattern is preferably in phase with the light passing through the first rim. . Further, the light passing through the first main shape pattern is preferably phase shifted by about 170 ° to about 190 ° with respect to the light passing through the first main shape pattern. More preferably, it is shifted by about 180 °. The light passing through the second rim at position 136 can actually be phase shifted by about 540 ° with respect to the light passing through the second main shape pattern 134. The net effect of a 540 ° phase rotation is the same as the 180 ° phase rotation effect (ie, 540 = 180 + 360). Further, the total rotation amount of the phase between the light passing through the first rim 132 and the light passing through the second main shape pattern 134 can be 720 °. However, since 720 ° is a multiple of 360 ° (720 = 2 × 360), the net phase rotation is 0 °. In other words, the light passing through the first rim 132 is in phase with the light passing through the second main shape pattern 134.

  Another embodiment will be described with reference to FIGS. 39-45. Referring initially to FIG. 39, a structure 500 comprising a pair of small piece portions 102 and 104 is shown. Each piece portion includes a base 110 and an opaque layer 112. Layers 502 and 504 are between the base and the opaque layer. Layer 502 can comprise an optical attenuation and / or reflection layer that also induces a slight phase shift. Layer 502 is made of a suitable material including, for example, one or both of chromium and aluminum, which are materials used in beam splitters. Layer 504 can be made of a material that transmits at least 90% of light of the desired wavelength, more preferably about 100% of light of the desired wavelength. Suitable materials are, for example, quartz or silicon dioxide. The material of layer 502 can be selected from those in which the wavelength of light exhibits a phase shift similar to that which occurs during propagation in air. If layer 502 is made of a material that can be selectively etched with respect to base 110 and layer 504, the fabrication of the irradiation pattern tool from structure 500 can be simplified.

  A first main shape pattern position 130 is defined relative to the small piece portion 102 and a first rim position 132 is defined proximate the first main shape pattern 130. A second main shape pattern position 134 is defined relative to the small piece portion 104, and a second rim position 136 is defined proximate to the second main shape pattern 134.

  Photoresist 510 is provided above the pieces 102 and 104. The photoresist 510 has an opening 520 therethrough to expose a portion of the opaque material 112 in the first primary shape pattern location 130 and the opaque material in the second primary shape pattern location 134. In order to expose other portions of 112, an opening 522 is provided therethrough. Photoresist 510 has a thin portion 512 above first rim location 132 and second rim location 136 and a thicker portion 514 on the outside of the thin portion 512.

  Referring to FIG. 40, the exposed portion of opaque material 112 has been etched to extend openings 520 and 522 to the upper surface of layer 504.

  Referring to FIG. 41, the exposed portion of layer 504 has been etched to extend openings 520 and 522 to the upper surface of layer 502.

  Referring to FIG. 42, the photoresist 510 is exposed to a solvent (or other suitable processing conditions) to remove a thin portion of the photoresist (see FIG. 41) and then the layers 112 and 502 are exposed. Etching is used to remove the portions. Since layers 502 and 512 are typically made of metal, they can be etched simultaneously using an etch that is substantially selective to the quartz of layers 504 and 110. A preferred etching is, for example, etching using chlorine-based plasma. In other embodiments, layers 112 and 502 can etch one layer at a time relative to each other. The structure of FIG. 42 has first and second main shape pattern positions 130, 132 extending to the upper surface of the base 110, and second and second rim positions 132, 136 extending to the upper surface of the layer 504.

  Referring to FIG. 43, the protective mask material 530 is located above the first main shape pattern position 130 and the first rim position 132 with the second main shape pattern position 134 and the second rim position 136 exposed. Is provided. The alignment of the mask material 530 does not require the mask to be strictly aligned with respect to the rim position or primary feature pattern position associated with the piece portion 102, but rather simply covers such position. , Strictness is not required. Although the mask material 530 is shown in FIG. 43 as being provided after removal of the photoresist 510 (see FIG. 42), an embodiment in which the photoresist 510 remains in place while the mask material 530 is provided. Are also included in the present invention. In this case, the mask 530 is provided on the photoresist 510.

  Referring to FIG. 44, the quartz material of base 110 and layer 504 has been etched to extend the first rim location to the top surface of layer 502 and the second major shape pattern location 134 into base 110. .

  Referring to FIG. 45, the protective mask 530 (see FIG. 44) has been removed. The structure after removal has a first main shape pattern at position 130, a first rim at position 132, a second main shape pattern at position 134, and a second rim at position 136. . 45 can correspond to any of the irradiation pattern tools of FIGS. 1-5, 8 and 59-63. The light passing through the first main shape pattern is preferably in phase with the light passing through the second rim, and the light passing through the second main shape pattern is preferably in phase with the light passing through the first rim. is there. Further, the light passing through the first main shape pattern is preferably 180 ° out of phase with respect to the light passing through the first rim, and the light passing through the second main shape pattern passes through the second rim. 180 ° out of phase with the light passing through.

  The embodiment described with reference to FIGS. 9-45 uses etching to form materials of different thicknesses, and the different thicknesses cause a phase difference in the light passing through the materials. It is used for Another approach to creating a phase difference in light passing through the material is to dope the material. Specifically, U.S. Pat. Nos. 5,208,125 and 5,217,830 describe various ways in which dopants are used to induce phase changes in light passing through a material. A method is described. As a particular aspect, the dopant can induce a 180 ° phase shift in the light passing through the material without attenuating the light. Among the ions described as being suitable for inducing appropriate changes in the light transmission properties of quartz materials are boron, indium, arsenic, antimony and phosphorus. Ion doping methods can be incorporated into embodiments of the present invention, representative examples of which are described below with reference to FIGS. 46-58.

  Referring initially to FIG. 46, a structure 600 is shown. The structure 600 is the same as the structure 100 of FIG. 9, and therefore, the same reference numerals are used to describe the structure of FIG. 9 in describing the structure 600 of FIG. . Accordingly, the structure 600 has a base 110 (preferably made of quartz), an opaque layer 112 (preferably made of chrome), and a patterned photoresist 114. Openings 120, 122, and 124 extend through the patterned photoresist to expose a portion of the opaque layer 112 at the first primary shape pattern location 130 and the second rim location 136. is doing.

  Referring to FIG. 47, exposed portions of opaque layer 112 (see FIG. 46) have been removed to extend openings 120, 122, 124 to the upper surface of base 110. In this specification, the expression that the opening extends “to” the upper surface is the case both when the opening terminates at the upper surface and when it extends into the upper surface. Should be understood as meaning.

  Referring to FIG. 48, the photoresist 114 is exposed to a solvent (or other suitable processing conditions) to remove the thin portion 118 of photoresist (see FIG. 47) to leave its thick portion 116. . Removal of the thin portion of the photoresist exposes a portion of the opaque layer 112 at the first rim location 132 and the second major shape pattern location 134. The exposed portion of opaque material 112 serves as a mask during subsequent dopant implantation, as shown in FIG. The implanted dopant forms a first doped region in the first main shape pattern location 130 and a second doped region in the second rim location 136. It is advantageous to process the resist prior to dopant implantation as shown. This is because it is possible to avoid processing the photoresist after the resist properties may change due to ion implantation into the resist. Further, if the remaining resist is affected by implantation, a hard mask can be provided between the resist 113 and the opaque layer 112.

  Referring to FIG. 50, the exposed part of the opaque layer 112 (see FIG. 49) has been removed.

  Referring to FIG. 51, the photoresist 114 (see FIG. 50) has been removed. The structure of FIG. 51 has a first primary shape pattern at location 130, a second primary shape pattern at location 134, a first rim 132 at location 132, and a second rim at location 136. The first main shape pattern at location 130 and the second rim at location 136 are comprised of doped regions 604 and 606, respectively. The light passing through the first main shape pattern is preferably in phase with the light passing through the second rim, and the light passing through the first rim is in phase with the light passing through the second main shape pattern. It is preferable. Also, the light passing through the first rim is out of phase by about 170 ° to about 190 °, more preferably about 180 ° or exactly 180 ° with respect to the phase of the light passing through the first main shape pattern. It is preferable to have. Also, the light passing through the second rim is about 170 ° to about 190 °, more preferably about 180 °, and most preferably exactly 180 ° its phase relative to the light passing through the second main shape pattern. Is preferably shifted. The structure of FIG. 51 can correspond to any of the irradiation pattern tools already described with reference to FIGS. 1-5, 8 and 59-63.

  52-58, another embodiment of the present invention using ion doping in combination with one or more light attenuation and / or phase shift layers will be described.

  Referring to FIG. 52, the structure 700 is shown. The structure includes a first piece portion 102 and a second piece portion 104. Both the piece portion 102 and the piece portion 104 have a base 110 and an opaque material 112. As described above, the base 110 can be made of quartz, and the opaque material 112 can be made of chromium. A light attenuating and / or phase shifting layer 702 is provided between the base 110 and the opaque material 112. Layer 702 can comprise, for example, molybdenum silicide.

  A first main shape pattern position 130 and a first rim position 132 are defined in relation to the small piece portion 102, while a second main shape pattern position 134 and a second rim position 136 are defined in relation to the small piece portion 104. . A patterned photoresist 710 is provided on the opaque material 112. The photoresist 710 has openings 720 and 722 that extend to the first main shape pattern position 130 and the second main shape pattern position 136, respectively. The resist 710 also has a thin region 712 on the first rim location 132 and the second rim location 134 and a thick region 714 outside the thin region 712.

  Referring to FIG. 53, openings 720 and 722 extend through opaque layer 112 and layer 702 to the upper surface of base 110. The etching can be stopped at the upper surface of the base 110 as shown, or it can be extended into the base 110 and stopped. In either case, the etching is expressed here as extending to the base 110.

  Referring to FIG. 54, resist 710 is exposed to a solvent (or other suitable processing condition) that removes thin region 712 (see FIG. 53) while leaving thick region 714. Such removal will expose a portion of the opaque material 112 in the first rim location 132 and the second rim location 134.

  Referring to FIG. 55, the exposed portion of opaque material 112 (see FIG. 54) has been removed. Thereby, the first rim position 132 and the second rim position 136 will extend to the layer 702.

  Referring to FIG. 56, a protective mask 730 is formed above the small piece portion 102, more specifically, on the first main shape pattern position 130 and the first rim position 132. Although the protective mask is illustrated as being formed after removal of the photoresist 710 (see FIG. 55), it is understood that the photoresist 710 may remain in place during the formation of the protective mask 730. Should. The second main shape pattern position 134 and the second rim position 136 are left exposed even after the mask 730 is provided. The mask 730 can be made of, for example, a photoresist.

  Referring to FIG. 57, a dopant 732 is implanted into the second main shape pattern location and the second rim location 136 to form a doped region 740 in the base 110 and a doped region 742 in the layer 702. .

  Referring to FIG. 58, the protective mask 730 (see FIG. 57) has been removed. The structure of FIG. 58 includes a first main shape pattern at a main shape pattern position 130, a first rim at a position 132, a second main shape pattern at a position 134, and a second rim at a position 136. Have. The concentration of the dopant in region 740 is such that the light passing through the second main shape pattern is about 170 ° to about 190 °, more preferably about 180 ° relative to the light passing through the first main shape pattern, And still more preferably it is provided at a concentration such that the phase is rotated exactly 180 °. Further, the dopant concentration and type in region 742 is such that the light passing through the second rim location is only about 170 ° to about 190 °, more preferably about 180 ° relative to the light passing through the second main shape pattern. It is preferred that the phase is selected to be rotated by only ° and even more preferably by exactly 180 °. Further, the thickness and type of the layer 702 is such that the light passing through the first rim passes from about 170 ° to about 190 °, more preferably through the first rim location, relative to the light passing through the first main shape pattern. Selected light is rotated by about 180 °, and even more preferably, the phase is selected to be rotated exactly 180 °. The structure of FIG. 58 can correspond to any of the irradiation pattern tools described with reference to FIGS. 1-5 and 8 and 59-63.

  The dopant used to form the region 740 and the region 742 preferably has little or no light attenuation for light of the desired wavelength passing through the second primary shape pattern and the second rim, but rather to the light. It is preferable to provide only a phase shift. In certain embodiments, layer 702 already provides the desired light attenuation, and the ion implanted dopant provides a 180 ° phase shift without any further light attenuation.

  The formation method described here enables self-alignment between the regions. More specifically, as at least the simplest design, to obtain 180 °, one area is exposed at 0 °, then it is coated (using photoresist) and the remaining areas are exposed. It is easy to make. (It should be noted that contacts and rims in phase with each other can be formed simultaneously.) The above-described method of providing different levels of electron or laser beams to the photoresist in different areas of the mask is performed with a single multi-light exposure. be able to. Additional alignment to further process the mask causes non-uniform pattern size due to misalignment, non-uniform light intensity, non-uniform mask etching, thereby affecting the aerial image on the wafer surface and distorting it. Will result in a layout. As a specific aspect, if additional resist exposure is desired, only coarsely aligned exposure occurs.

  Difficulties in capturing images of contacts according to prior art methods occur when the spacing between contacts is smaller than the desired contact diameter. Specifically, it is difficult to copy the contact image without copying the bridge image between the contacts. Typically, it is easier to print isolated contacts with low spatial coherence ("sigma"). Certain applications of the present invention can optimize processing tolerances for both isolated and dense contacts.

  The formation method described here can start with a mask blank that already has the desired layer, eg, quartz (substrate), MoSi-quartz (silica), and chromium. Alternatively, the process can be started with a “standard” mask blank of quartz-MoSi-chromium and an additional phase shift layer can be deposited on top during the formation process. In order to thin this additional layer in selected areas, it may be desirable to apply an additional lithographic process, which would result in a misalignment risk.

  In accordance with the law, the structural and method features of the present invention have been described. However, the present invention is not limited to the features of the embodiments shown in the drawings and described, since they merely show the best mode for carrying out the invention. Accordingly, the present invention includes any changes and modifications that are construed based on the principle equivalent to those described in the claims.

FIG. 1 is a schematic top view of a small piece of an irradiation pattern tool of a first embodiment included in the present invention. FIG. 2 is a schematic top view of a small piece of the irradiation pattern tool of the second embodiment included in the present invention. FIG. 3 is a schematic top view of a small piece of the irradiation pattern tool of the third embodiment included in the present invention. FIG. 4 is a schematic top view of a small piece of the irradiation pattern tool of the fourth embodiment included in the present invention. FIG. 5 is a schematic top view of a small piece of the irradiation pattern tool of the fifth embodiment included in the present invention. FIG. 6 is a top view of an irradiation pattern tool (particularly a reticle) according to the prior art, and a graph showing a simulated contact pattern formed by the reticle when the spatial coherence (sigma) of the lithographic apparatus is 0.35. . The system wavelength for simulation was 248 nanometers and the numerical aperture was 0.70. FIG. 7 is a graph showing a top view of an irradiation pattern tool (particularly, a reticle) included in the present invention and a simulated contact pattern formed by the tool at a sigma of 0.35. The system wavelength for simulation was 248 nanometers and the numerical aperture was 0.70. FIG. 8 is a schematic top view of a small piece of an irradiation pattern tool included in the present invention. FIG. 8 shows cut locations 2 and 4 used in FIGS. 9-58. Specifically, FIGS. 9-58 include a pair of small pieces of an irradiation pattern tool shown at the cut location. The left small piece of the pair is shown along the cutting line 2-2 in FIG. 8, and the right small piece of the pair is shown along the cutting line 4-4 in FIG. FIG. 8 illustrates a completed structure, and the embodiment of FIGS. 9-58 corresponds to an exemplary process for forming such a completed structure. FIG. 9 shows an irradiation pattern tool substrate at a preliminary processing stage in the method of the first embodiment of the present invention for forming an irradiation pattern tool. A pair of small pieces of the substrate is shown, the left small piece of the pair corresponds to the cross section along the cutting line 2-2 in FIG. 8, and the right small piece in the pair is the cutting line 4 in FIG. Corresponds to the cross section along -4. FIG. 10 is a schematic cross-sectional view of the small piece of FIG. 9 in the process following the process of FIG. FIG. 11 is a schematic cross-sectional view of the small piece of FIG. 9 in a process following the process of FIG. FIG. 12 is a schematic cross-sectional view of the small piece of FIG. 9 in a process following the process of FIG. FIG. 13 is a schematic cross-sectional view of the small piece of FIG. 9 in the process following the process of FIG. FIG. 14 is a schematic cross-sectional view of a pair of small pieces of a reticle substrate in a preliminary processing stage in the method of the second embodiment of the present invention. Of the illustrated small pieces, the left small piece corresponds to the cross section taken along the cutting line 2-2 in FIG. 8, and the right small piece corresponds to the cross section taken along the cutting line 4-4 in FIG. FIG. 15 shows the small piece of FIG. 14 in the process following the process of FIG. FIG. 16 shows the small piece of FIG. 14 in the process following the process of FIG. FIG. 17 shows the small piece of FIG. 14 in the process following the process of FIG. FIG. 18 shows the small piece of FIG. 14 in the process following the process of FIG. FIG. 19 shows the small piece of FIG. 14 in the process following the process of FIG. FIG. 20 shows the small piece of FIG. 14 in the process following the process of FIG. FIG. 21 shows the small piece of FIG. 14 in the process following the process of FIG. FIG. 22 is a fragmentary cross-sectional view of a semiconductor substrate showing the preliminary processing steps of the method of the third embodiment of the present invention. In particular, FIG. 22 shows a pair of small pieces of the substrate, the left piece corresponding to the view taken along the section line 2-2 in FIG. 8, and the right piece taken along the section line 4-4 in FIG. Corresponding to FIG. 23 shows the small piece of FIG. 22 in the process following the process of FIG. FIG. 24 shows the small piece of FIG. 22 in the process following the process of FIG. FIG. 25 shows the small piece of FIG. 22 in the process following the process of FIG. FIG. 26 shows the small piece of FIG. 22 in the process following the process of FIG. FIG. 27 shows the small piece of FIG. 22 in the process following the process of FIG. FIG. 28 shows the small piece of FIG. 22 in the process following the process of FIG. FIG. 29 shows the small piece of FIG. 22 in the process following the process of FIG. FIG. 30 shows the small piece of FIG. 22 in the process following the process of FIG. FIG. 31 shows the small piece of FIG. 22 in the process following the process of FIG. FIG. 32 is a schematic cross-sectional view of a reticle substrate showing preliminary processing steps in the method of the fourth embodiment of the present invention. FIG. 32 shows a pair of small pieces of the substrate, the left one of the small pieces corresponds to the view along the cutting plane 2-2 in FIG. 8, and the right one of the small pieces is the cutting line 4-4 in FIG. Corresponds to the figure along FIG. 33 shows the small piece of FIG. 32 in the process following the process of FIG. FIG. 34 shows the small piece of FIG. 32 in the process following the process of FIG. FIG. 35 shows the small piece of FIG. 32 in the process following the process of FIG. FIG. 36 shows the small piece of FIG. 32 in the process following the process of FIG. FIG. 37 shows the small piece of FIG. 32 in the process following the process of FIG. FIG. 38 shows the small piece of FIG. 32 in the process following the process of FIG. FIG. 39 is a schematic cross-section of an irradiation pattern tool showing the pretreatment steps of the method according to the invention. 39 shows a pair of small pieces of the substrate, the left one of the small pieces corresponds to the view along the cutting plane 2-2 of FIG. 8, and the right one of the small pieces is the cutting line 4- Corresponds to the figure along 4. FIG. 40 shows the small piece of FIG. 39 in the process following the process of FIG. FIG. 41 shows the small piece of FIG. 39 in the process following the process of FIG. FIG. 42 shows the small piece of FIG. 39 in the process following the process of FIG. FIG. 43 shows the small piece of FIG. 39 in the process following the process of FIG. FIG. 44 shows the small piece of FIG. 39 in the process following the process of FIG. FIG. 45 shows the small piece of FIG. 39 in the process following the process of FIG. FIG. 46 is a schematic cross section of an irradiation pattern tool showing the preliminary processing steps of yet another method according to the present invention. 46 shows a pair of small pieces of the substrate, the left one of the small pieces corresponds to the view along the cutting plane 2-2 in FIG. 8, and the right one of the small pieces is the cutting line 4-4 in FIG. 8. Corresponds to the figure along 4. FIG. 47 shows the small piece of FIG. 46 in the process following the process of FIG. FIG. 48 shows the small piece of FIG. 46 in the process following the process of FIG. FIG. 49 shows the small piece of FIG. 46 in the process following the process of FIG. FIG. 50 shows the small piece of FIG. 46 in the process following the process of FIG. FIG. 51 shows the small piece of FIG. 46 in the process following the process of FIG. FIG. 52 shows an irradiation pattern tool substrate in a preliminary processing step of yet another method according to the present invention. FIG. 52 schematically shows a pair of small pieces in cross section, the left one of the small pieces corresponds to the view along the cutting plane 2-2 in FIG. 8, and the right one of the small pieces is the cut in FIG. Corresponds to the view along line 4-4. FIG. 53 shows the small piece of FIG. 52 in the process following the process of FIG. 54 shows the small piece of FIG. 52 in the process following the process of FIG. FIG. 55 shows the small piece of FIG. 52 in the process following the process of FIG. FIG. 56 shows the small piece of FIG. 52 in the process following the process of FIG. FIG. 57 shows the small piece of FIG. 52 in the process following the process of FIG. FIG. 58 shows the small piece of FIG. 52 in the process following the process of FIG. FIG. 59 is a schematic top view of an irradiation pattern tool of another embodiment included in the present invention. FIG. 60 is a schematic top view of an irradiation pattern tool of still another embodiment included in the present invention. FIG. 61 is a schematic top view of an irradiation pattern tool of still another embodiment included in the present invention. FIG. 62 is a schematic top view of an irradiation pattern tool of still another embodiment included in the present invention. FIG. 63 is a schematic top view of an irradiation pattern tool of still another embodiment included in the present invention.

Claims (67)

An irradiation pattern tool,
A quartz base; a first phase shift layer on the quartz base; a second phase shift layer provided on the first phase shift layer and having a composition different from that of the first phase shift layer; A substrate comprising an opaque material on the phase shift layer;
A main shape pattern having an outer edge and configured to give a first phase rotation to a wavelength of light passing therethrough, wherein the main shape pattern includes the first phase shift layer and the second phase shift layer. And a main shape pattern having a pattern etched through the opaque layer;
A rim along a portion of the outer edge of the main shape pattern, but not along the entire outer edge, the rim having a second phase rotation relative to the wavelength of the light as the wavelength passes through it. The second phase rotation is about 170 ° to about 190 ° out of phase with respect to the first phase rotation, and the rim includes the opaque layer and the second phase rotation. A rim having a pattern etched through the shift layer to the first phase shift layer;
An irradiation pattern tool characterized by comprising:   The irradiation pattern tool according to claim 1, wherein the first phase shift layer attenuates light more than the second phase shift layer. The tool of claim 1, wherein
The first phase shift layer is made of molybdenum and silicon;
The second phase shift layer is composed of silicon and one or both of oxygen and nitrogen.
Irradiation pattern tool characterized by that.   4. The irradiation pattern tool according to claim 3, wherein the opaque layer is made of chromium. An irradiation pattern tool,
An array of primary shape patterns arranged in a row and array direction, wherein the primary shape pattern is configured to rotate the phase of the wavelength of the light as it passes through the primary shape pattern; A first type that imparts a first rotation to the phase and a second type that imparts a second rotation to the phase, wherein the second rotation differs from about 170 ° to about 190 ° relative to the first rotation An array in which the two types of main shape patterns alternate with each other along the row direction of the array; and
A plurality of first rims configured to provide a rotation of a first phase with respect to a wavelength of light, the rims being provided along sides of a second type main shape pattern; With the rim,
A plurality of second rims configured to provide a second phase rotation with respect to the wavelength of the light, wherein the rims are provided along the sides of the first type main shape pattern; With the rim,
An irradiation pattern tool, wherein the first and second rims are provided along a column direction of the array.   6. The irradiation pattern tool according to claim 5, wherein the two types of main shape patterns are not alternated along the column direction of the array.   6. The tool of claim 5, wherein the two types of primary shape patterns are not alternating with each other along the column direction of the array, and adjacent primary shape patterns are along the column direction. An illumination pattern tool characterized in that the individual rims are separated by a distance and extend over the entire distance between adjacent main shape patterns along the columns of the array.   6. The irradiation pattern tool of claim 5, further comprising a plurality of sidelobe suppression patterns between adjacent rims along the columns of the array.   6. The tool of claim 5, further comprising a plurality of sidelobe suppression patterns, wherein each sidelobe suppression pattern is provided between adjacent rims along the column direction of the array. The suppression pattern is configured to rotate the wavelength of the light by about 170 ° to about 190 ° relative to the rotation imparted to the light by the rim on either side of the individual sidelobe suppression pattern. Irradiation pattern tool.   10. The tool of claim 9, wherein adjacent rims along the column direction are separated from each other by a distance, and each sidelobe suppression pattern is between adjacent rims along the column direction of the array. An irradiation pattern tool, which extends over the entire distance.   10. The tool of claim 9, wherein adjacent rims along the column direction are separated from each other by a distance, and each sidelobe suppression pattern is between adjacent rims along the column direction of the array. Irradiation pattern tool characterized by not extending over the entire distance.   6. The irradiation pattern tool according to claim 5, wherein the two types of main shape patterns alternate with each other along the column direction of the array.   6. The tool of claim 5, wherein the two first rims are matched with each of the second type primary shape patterns, and the two second rims are of the first type primary shape patterns. Irradiation pattern tool characterized by being matched with each.   6. The irradiation pattern tool according to claim 5, wherein the second rim is not along the row direction of the array.   6. The irradiation pattern tool according to claim 5, wherein the first and second rims are not along the row direction of the array. 6. The quartz phase according to claim 5, a first phase shift layer on the quartz base, and a second phase shift provided on the first phase shift layer and having a composition different from that of the first phase shift layer. In an irradiation pattern tool comprising a layer and an opaque material on the second phase shift layer,
The first type main shape pattern is a pattern etched through the first phase shift layer, the second phase shift layer and the opaque layer,
The second type main shape pattern is a pattern etched through the first phase shift layer, the second phase shift layer and the opaque layer into the base.
Irradiation pattern tool characterized by that. The irradiation pattern tool according to claim 16,
The first rim is a pattern etched through the opaque layer and the second phase shift layer to the first phase shift layer,
The second rim is a pattern that penetrates the opaque layer and is etched to the second phase shift layer.
Irradiation pattern tool characterized by that.   The irradiation pattern tool according to claim 16, wherein the first phase shift layer attenuates light more than the second phase shift layer. The tool according to claim 16, wherein
The first phase shift layer is made of molybdenum and silicon;
The second phase shift layer comprises silicon and one or both of oxygen and nitrogen;
Irradiation pattern tool characterized by that. A method of forming an irradiation pattern tool, the method comprising:
Providing a substrate; and
Forming a first main shape pattern supported by the substrate, wherein the first shape pattern has an outer edge, and the first shape pattern corresponds to a phase of light passing through the first main shape pattern; Forming a first main shape pattern configured to provide a first phase rotation;
Forming a first rim supported by the substrate, wherein the first rim is provided not along the entire outer edge of the first main shape pattern but along a part thereof; , Configured to provide a second phase rotation relative to the wavelength of light as the wavelength passes through the rim, wherein the second phase rotation is from about 170 ° to about 190 with respect to the first phase rotation. Different process of forming the first rim,
A process of forming a second main shape pattern supported by the substrate, wherein the second main shape pattern has an outer edge, and the second main shape pattern has a wavelength passing through the second main shape pattern. A second main shape pattern configured to provide a third phase rotation with respect to a wavelength of light, wherein the third phase rotation differs from about 170 ° to about 190 ° with respect to the first phase rotation. The process of forming,
Forming a second rim supported by the substrate, wherein the second rim is provided not along the entire outer edge of the second main shape pattern but along a part thereof, , Configured to provide a fourth phase rotation with respect to the wavelength of light as the wavelength passes through the rim, wherein the fourth phase rotation is about 170 ° to about 190 with respect to the third phase rotation. Different process of forming the second rim,
A method of forming an irradiation pattern tool comprising:   21. The method of claim 20, wherein the first and second main shape patterns are arranged in a row and column direction, and the first and second main shape patterns alternate with each other along the row direction of the array. The method of forming an irradiation pattern tool, wherein the first and second rims are along a column direction of the array.   The method of claim 21, wherein the first and second primary shape patterns are not alternating with each other along the column direction of the array.   The method of claim 21, wherein the first and second main shape patterns alternate with each other along the column direction of the array. 21. The method of claim 20, wherein the substrate is made of a material that is transparent to the wavelength of light, a layer opaque to the wavelength of light is provided on the substrate, and the first and second main shapes are formed. The pattern and the first and second rims
Forming a layer of photoresist over the opaque material, wherein the first portion of the photoresist is over a first defined primary shape pattern location and the second portion of the photoresist is a first portion; A third portion of the photoresist is over a second defined main shape pattern location, and a fourth portion of the photoresist is over a second defined rim location. Forming a layer of photoresist above the location;
Removing the first and fourth portions of the photoresist to expose a portion of the layer within the first primary shape pattern location and the second rim location;
To remove an exposed portion of the layer from the first main shape pattern position and the second rim position, and to form an opening in the first main shape pattern position and the second rim position of the substrate Etching into the substrate; and
After forming an opening in the first main shape pattern position and the second rim position, the photoresist layer is exposed to form a portion of the layer in the first rim position and the second main shape pattern position. Removing the second part and the third part;
Removing an exposed portion of the layer from the first rim position and the second primary shape pattern;
A method of forming an irradiation pattern tool, characterized by being formed by:   25. The method of claim 24, further comprising removing the exposed portion of the layer from the first rim position and the second main shape pattern position before the first main shape pattern position and the second rim position. A method of forming an irradiation pattern tool characterized by having a process of implanting a dopant.   26. A method according to claim 25, wherein the dopant is boron, indium, arsenic, antimony or phosphorus. 21. The method according to claim 20, wherein the substrate is made of a light transmissive material, and a layer opaque to the wavelength of light is provided on the substrate, and the first and second main shape patterns are provided. And the first and second rims are
Forming a layer of photoresist on the opaque material, wherein the first portion of the photoresist is provided on a first defined primary shape pattern location, and the second portion of the photoresist is A third portion of the photoresist is provided over a first defined rim location, a third portion of the photoresist is provided over a second defined primary shape pattern location, and a fourth portion of the photoresist is a second definition. Forming a layer of photoresist provided over the rim location formed;
Removing the first and third portions of the photoresist to expose a portion of the layer in the first and second main shape pattern locations;
Etching into the substrate to remove exposed portions of the layer from the first and second major shape patterns and to form openings in the first and second major shape pattern locations of the substrate. The process of
After forming openings in the first and second main shape pattern positions, the second and fourth portions of the photoresist are exposed to expose portions of the layer in the first and second rim positions. The process of removing the part,
Removing an exposed portion of the layer from the first and second rim locations;
A method of forming an irradiation pattern tool comprising:   28. The method of claim 27, wherein the substrate consists essentially of quartz, and the layer opaque to wavelength is formed by physically pressing against the quartz of the substrate, and comprising chromium. A method of forming an irradiation pattern tool characterized by:   28. The method according to claim 27, wherein the substrate is provided with a quartz base, a first phase shift layer on the quartz base, and a composition different from that of the first phase shift layer provided on the first phase shift layer. A method of forming an irradiation pattern tool comprising: a second phase shift layer comprising:   30. The method of claim 29, wherein the first phase shift layer is composed of molybdenum and silicon, and the second phase shift layer is composed of silicon and one or both of oxygen and nitrogen. A method of forming an irradiation pattern tool.   30. The method of claim 29, wherein the opaque material is physically pressed against the second phase shift layer.   30. The method of claim 29, wherein an opening in the first primary shape pattern extends no deeper than an upper surface of the quartz base, and an opening at the location of the second primary shape pattern extends into the quartz base. A method of forming an irradiation pattern tool characterized by being extended. 30. The method of claim 29, wherein openings in the first and second main shape patterns are extended into a quartz base, the method further comprising:
Forming a protective mask on the first main shape pattern position and the first rim position;
In order to extend the opening in the second main shape pattern position and form the opening in the second rim position while the protective mask is on the first main shape pattern position and the first rim position, Etching into the second phase shift layer of the substrate;
Removing a protective mask from the first main shape pattern position and the first rim position;
A method of forming an irradiation pattern tool characterized by comprising:   28. The method according to claim 27, wherein the substrate includes a quartz base, a light attenuation layer on the quartz base, and a phase shift layer provided on the light attenuation layer and having a composition different from that of the light attenuation layer. A method of forming an irradiation pattern tool characterized by:   35. The method of claim 34, wherein the light attenuating layer comprises one or more of Cr, Mo, Al, and the phase shift layer comprises silicon and one of oxygen and nitrogen. A method of forming an irradiation pattern tool comprising: or both. 35. The method of claim 34, wherein the openings at the first and second main shape pattern locations extend to an upper surface of the quartz base, the method further comprising:
Forming a protective mask on the first main shape pattern position and the first rim position;
While the protective mask is present on the first main shape pattern position and the first rim position, an opening in the second main shape pattern extends into the substrate and extends to the upper surface of the light attenuation layer. Forming an opening to be formed at the second rim position;
Removing the protective mask from the first main shape pattern position and the first rim position;
A method of forming an irradiation pattern tool characterized by comprising: 28. The method of claim 27, further after removing exposed portions of the layer from the first and second rim locations.
Forming a photoresist mask on the first main shape pattern position and the first rim position;
To extend an opening in the second main shape pattern position and form an opening in the second rim position while the protective mask is present on the first main shape pattern position and the first rim position. And etching into the substrate;
Removing the protective mask from the first main shape pattern position and the first rim position;
A method of forming an irradiation pattern tool characterized by comprising:   38. The method of claim 37, wherein the protective mask comprises a photoresist. 28. The method of claim 27, further after removing exposed portions of the layer from the first and second rim locations.
Forming a protective mask on the first main shape pattern position and the first rim position;
Implanting a dopant into the second rim position and the second main shape pattern position while the protective mask exists on the first main shape pattern position and the first rim position;
Removing the protective mask from the first main shape pattern position and the first rim position;
A method of forming an irradiation pattern tool characterized by comprising:   40. The method of claim 39, wherein the dopant comprises phosphorous, indium, arsenic, antimony, or boron.   40. The method of claim 39, wherein the substrate comprises a quartz mass having a phase shift layer thereon, and an opening in the second main shape pattern position extends through the phase shift layer to the quartz mass. And a dopant is implanted into the quartz mass at the second main shape pattern position and into the phase shift layer at the second rim position.   42. The method of claim 41, wherein the phase shift layer comprises molybdenum and silicon. A method of forming an irradiation pattern tool, the method comprising:
Providing a substrate, the substrate comprising a mass transparent to the wavelength of light, and a layer on the mass opaque to the wavelength of light;
Forming a layer of photoresist on the opaque material, wherein the first portion of the photoresist is provided on a first defined primary shape pattern location, and the second portion of the photoresist is A third portion of the photoresist is provided over a first defined rim location, a third portion of the photoresist is provided over a second defined major shape pattern location, and a fourth portion of the photoresist is a second definition. Forming a layer of photoresist provided on the rim location to be formed;
Removing the first and fourth portions of the photoresist to expose a portion of the layer in the first main shape pattern position and the second rim position;
Removing an exposed portion of the layer from the first main shape pattern position and the second rim position;
Implanting a dopant into the substrate at the first main shape pattern position and the second rim position after removing the exposed part of the layer;
Removing the second and third portions of the photoresist to expose a portion of the layer at the first rim location and the second main shape pattern location after implanting the dopant;
Removing the exposed part of the layer from the first rim position and the second main shape pattern position,
The doped region at the first main shape pattern location comprises a first main shape pattern configured to provide a first phase rotation relative to the wavelength of light when the wavelength passes therethrough;
The first rim position is along a part of the first main shape pattern, and the first rim is configured to give a second phase rotation with respect to the wavelength of light when the wavelength passes therethrough. The second phase rotation differs from about 170 ° to about 190 ° with respect to the first phase rotation;
The second main shape pattern position comprises a second main shape pattern configured to provide a third phase rotation with respect to the wavelength of light when the wavelength passes therethrough, wherein the third phase rotation is Differing from about 170 ° to about 190 ° with respect to the first phase rotation;
The doped region at the second rim position is along a portion of the second main shape pattern and is configured to provide a fourth phase rotation with respect to the wavelength of light when the wavelength passes therethrough. And the fourth phase rotation differs from the third phase rotation by about 170 ° to about 190 °,
A method of forming an irradiation pattern tool characterized by:   44. The method of claim 43, wherein the substrate is essentially made of quartz, and the layer opaque to wavelength is formed by being physically pressed against the quartz of the substrate, and made of chromium. A method of forming an irradiation pattern tool characterized by:   44. The method of claim 43, wherein the dopant comprises boron, indium, arsenic, antimony, or phosphorus. A method of forming an irradiation pattern tool, the method comprising:
Providing a substrate, the substrate comprising a mass transparent to the wavelength of light and a layer opaque to the wavelength of light on the mass;
Forming a layer of photoresist on the opaque material, wherein the first portion of the photoresist is provided on a first defined primary shape pattern location, and the second portion of the photoresist is A third portion of the photoresist is provided over a first defined rim location, a third portion of the photoresist is provided over a second defined primary shape pattern location, and a fourth portion of the photoresist is a second definition. A step of forming a layer of photoresist provided on the formed rim location, and exposing the first portion of the photoresist to expose a portion of the layer within the first and second major shape pattern locations. And removing the third portion;
Removing the exposed portion of the layer from the first and second primary shape pattern locations;
After removing the exposed portion of the layer from the first and second main shape pattern locations, the photoresist layer is exposed in order to expose a portion of the layer from the first and second rim locations. Removing the second and fourth portions;
Removing the exposed portions of the layer from the first and second rim locations;
Forming a photoresist mass on the first main shape pattern position and the first rim position after removing the exposed portions of the layer from the first and second rim positions;
Implanting a dopant into the substrate at the second main shape pattern position and the second rim position after forming the photoresist mass;
A process of removing the photoresist mass after implanting the dopant, and
The first main shape pattern position has a first main shape pattern configured to provide a first phase rotation with respect to the wavelength of light when the wavelength passes therethrough;
The first rim position includes a first rim configured to provide a second phase rotation with respect to the wavelength of light when a wavelength passes along a portion of the first main shape pattern. The second phase rotation differs from about 170 ° to about 190 ° with respect to the first phase rotation;
The doped second main shape pattern position comprises a second main shape pattern configured to provide a third phase rotation with respect to the wavelength of light passing therethrough, wherein the third phase rotation is the first phase rotation. Differing from about 170 ° to about 190 ° with respect to the phase rotation of
The doped second rim position is configured to provide a fourth phase rotation with respect to the wavelength of light when a wavelength passes along a portion of the second main shape pattern. The fourth phase rotation differs from the third phase rotation by about 170 ° to about 190 °,
A method of forming an irradiation pattern tool characterized by:   47. The method of claim 46, wherein the substrate comprises a quartz mass having a phase shift layer thereon, the phase shift layer comprises molybdenum and silicon, and the opaque layer with respect to wavelength comprises chromium. A method of forming a featured irradiation pattern tool.   48. The method of claim 47, wherein the doped region at the second main shape pattern position is in the quartz substrate, and the doped region at the second rim position is in the phase shift layer. A method of forming an irradiation pattern tool.   48. The method of claim 46, wherein the dopant comprises boron, indium, arsenic, antimony, or phosphorus. A method of forming an irradiation pattern tool, the method comprising:
A quartz base, a first phase shift layer on the quartz base, a second phase shift layer on the first phase shift layer and having a composition different from that of the first phase shift layer, and the second Providing a substrate having an opaque material on a phase shift layer;
Etching the first pattern through the first phase shift layer, the second phase shift layer, and the opaque layer into the substrate, wherein the first pattern is a first main shape pattern; Etching the first pattern, wherein the primary pattern has an outer edge and is configured to provide a first phase rotation with respect to the wavelength of light passing therethrough;
Etching a second pattern through the first phase shift layer, the second phase shift layer, and the opaque layer, wherein the second pattern is a second main shape pattern, and the second main shape pattern is The second phase rotation is configured to provide a second phase rotation with respect to a wavelength of light having an outer edge and passing therethrough, wherein the second phase rotation is about 170 ° to about 190 with respect to the first phase rotation. Different etching process of the second pattern,
Etching the third pattern through the opaque layer, wherein the third pattern is a first rim, and the first rim is not along the entire circumference of the outer edge of the first main shape pattern. Provided along a portion thereof, wherein the first rim is configured to provide a third phase rotation with respect to the wavelength of light when the wavelength passes therethrough, Etching a third pattern that differs from about 170 ° to about 190 ° relative to the first phase rotation;
Etching a fourth pattern through the opaque layer and the second phase shift layer to the first phase shift layer, wherein the fourth pattern is a second rim, and the second rim is the The second rim is provided not along the entire circumference of the outer edge of the second main shape pattern but along a part thereof, and the second rim provides a fourth phase rotation with respect to the wavelength of light when the wavelength passes therethrough. Etching the fourth pattern, wherein the fourth phase rotation differs from about 170 ° to about 190 ° with respect to the second phase rotation;
A method of forming an irradiation pattern tool comprising: 51. The method of claim 50, wherein forming the first rim and the first main shape pattern comprises:
Forming a layer of photoresist over the opaque material, wherein the first portion of the photoresist is over a defined first major shape pattern location and the second portion of the photoresist is defined; Forming a layer of photoresist overlying the first rim location;
In order to form a stepped photoresist mask that is thicker on the first rim position than on the first main shape pattern position, the thickness of the photoresist on the first part is made thinner than the second part. The process of
A process of etching the photoresist to remove the photoresist on the first main shape pattern position while leaving the photoresist on the first rim position, the first main shape pattern Removing the photoresist from above a position exposing a portion of the opaque layer, etching the photoresist;
Etching to the first main shape pattern position to remove the exposed portion of the opaque layer and form a first opening extending into the first main shape pattern position;
Extending the first opening through the first and second phase shift layers into the substrate;
Removing the photoresist from above the first rim position after extending the first opening;
Removing the opaque layer from over the first rim pattern to form a first rim that extends through the opaque layer to the second phase shift layer;
A method of forming an irradiation pattern tool characterized by comprising: 52. The method of claim 51, wherein forming the stepped photoresist mask comprises:
Exposing the first and second portions of the photoresist to light irradiation, wherein the first portion of the photoresist is exposed to a different amount of light than the second portion of the photoresist; The process of exposure to light,
In the process of processing the photoresist with a developer solution, the developer solution removes more photoresist from the first portion than the second portion to form the stepped photoresist mask. A process with a developer solution;
A method of forming an irradiation pattern tool characterized in that is performed in 51. The method of claim 50, wherein forming the second rim and the second main shape pattern comprises:
Forming a layer of photoresist on the opaque material, wherein the first portion of the photoresist is over a second major shape pattern location to be defined, and the second portion of the photoresist is defined. Forming a layer of photoresist overlying the second rim location to be
In order to form a stepped photoresist mask whose thickness on the second rim position is thicker than that on the second main shape pattern position, the thickness of the photoresist on the first portion is made thinner than the second portion. Process,
A process of etching the photoresist to remove the photoresist from the second main shape pattern position while leaving the photoresist on the second rim position, the second main shape pattern Removing the photoresist from above a position exposing a portion of the opaque layer, etching the photoresist;
Etching to the second main shape pattern position to remove the exposed portion of the opaque layer and form a first opening extending into the second main shape pattern position;
Extending the first opening through the second phase shift layer;
Removing the photoresist from above the second rim position after extending the first opening;
Removing an opaque layer from above the second rim pattern to form a second opening extending into the second rim position;
Extending the first and second openings to form the second main shape pattern extending through to the quartz substrate and forming the second rim extending to the first phase shift layer The process of
A method of forming an irradiation pattern tool characterized in that is performed in 54. The method of claim 53, wherein forming the stepped photoresist mask comprises:
Exposing the first and second portions of the photoresist to light irradiation, wherein the first portion of the photoresist is exposed to a different amount of light than the second portion of the photoresist; The process of exposure to light,
In the process of processing the photoresist with a developer solution, the developer solution removes more photoresist from the first portion than the second portion to form the stepped photoresist mask. A process with a developer solution;
A method of forming an irradiation pattern tool characterized in that is performed in 51. The method of claim 50, wherein forming the first main shape pattern and the second main shape pattern includes:
Forming a patterned layer of photoresist on the opaque material, wherein a portion of the photoresist is on a defined second major shape pattern location and defined first major shape pattern Forming a patterned layer of photoresist, the location being exposed through the patterned photoresist opening;
While the patterned photoresist covers the second main shape pattern location, a portion of the opaque material is removed and a first opening extending into the first main shape pattern location is formed. For this purpose, a process of etching into the position of the first main shape pattern,
Extending the first opening through the second phase shift layer;
Removing the photoresist from the position of the second main shape pattern after extending the first opening;
Removing the opaque layer from the second main shape pattern position to form a second opening extending into the second main shape pattern position;
Extending the first opening through the second phase shift layer into the substrate, and extending the second opening through the first and second phase shift layers to the substrate;
A method of forming an irradiation pattern tool characterized in that is performed in   51. The method of claim 50, wherein the first phase shift layer attenuates light more than the second phase shift layer. 51. The method of claim 50, wherein
The first phase shift layer is made of molybdenum and silicon;
The method of forming an irradiation pattern tool, wherein the second phase shift layer is made of silicon and one or both of oxygen and nitrogen.   51. The method of claim 50, wherein the opaque layer comprises chromium.   51. The method of claim 50, wherein the first and second main shape patterns are arranged in a row direction and a column direction, and the first and second main shape patterns alternate with each other along the row direction of the array. A method of forming an irradiation pattern tool, wherein the first and second rims are provided along a column direction of the array.   60. The method of claim 59, wherein the first and second primary shape patterns are not alternating with each other in the column direction of the array.   60. The method of claim 59, wherein the first and second primary shape patterns alternate with each other along the column direction of the array.   60. The method of claim 59, wherein the first and second major shape patterns are not alternating with each other along the column direction of the array and adjacent rims are along each other along the column direction. A method of forming an illumination pattern tool characterized in that the rims are separated by a distance and the rims extend over the entire distance between adjacent main shape patterns along the column direction of the array.   60. The method of claim 59, further comprising forming a plurality of sidelobe suppression patterns between adjacent rims along the column direction of the array. How to form.   60. The method of claim 59, further comprising forming a plurality of sidelobe suppression patterns between adjacent rims along the column direction, wherein each sidelobe suppression pattern is in the array. Between adjacent rims along the column direction, the individual sidelobe suppression pattern is about 170 ° to about 190 ° relative to the rotation provided by the rim on either side of the individual sidelobe suppression pattern A method of forming an illumination pattern tool, characterized in that it is configured to impart a different phase rotation to the wavelength of light.   65. The method of claim 64, wherein adjacent rims along the column direction of the array are separated from each other by a distance, and the individual sidelobe suppression patterns are adjacent along the column direction of the array. A method of forming an illumination pattern tool, wherein the irradiation pattern tool is formed to extend over the entire distance between rims.   65. The method of claim 64, wherein adjacent rims along the column direction of the array are separated from each other by a distance, and the individual sidelobe suppression patterns are adjacent along the column direction of the array. A method of forming an illumination pattern tool, wherein the irradiation pattern tool is formed so as not to extend over the entire distance between rims. 60. The method of claim 59, wherein the first and second rims are not formed along the row direction of the array.