JP2006352100A - Manufacturing method for semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which a manufacturing cost can be reduced, manufacturing time is reduced and productivity is improved. <P>SOLUTION: A method for manufacturing a semiconductor device comprises a step for forming a first layer comprising a metal on a substrate, a step for forming a second layer comprising an inorganic material on the first layer, a step for forming a third layer comprising a thin film transistor on the second layer, a step for irradiating the first, second and third layers with a laser beam to form an opening part by removing at least the second and third layers, a step for bonding a film to the surface of the third layer, and a step for separating the third layer from the substrate with the inside part of the first layer or the part between the first layer and the second layer as a boundary by using the film. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

The present invention relates to a method for manufacturing a semiconductor device.

In recent years, a semiconductor device including a thin film transistor provided over an insulating surface has been developed. Among such semiconductor devices, there is a technique in which a release layer is formed over a substrate, a transistor is formed over the release layer, and then the release layer is removed using an etchant such as halogen fluoride (for example, , See Patent Document 1).
Japanese Patent No. 3406727

Halogen fluoride used as an etchant to remove the release layer, such as chlorine trifluoride (ClF ₃ ), was expensive. Therefore, when such an etchant is used, it is difficult to reduce the manufacturing cost of the semiconductor device. In addition, the process of removing the release layer by gradually retreating it with an etching agent requires several hours, which is one of the causes of poor productivity of semiconductor devices.

Thus, an object of the present invention is to provide a method for manufacturing a semiconductor device, which can reduce manufacturing costs. It is another object of the present invention to provide a method for manufacturing a semiconductor device that can reduce manufacturing time and improve productivity.

The method for manufacturing a semiconductor device of the present invention includes a step of forming a first layer on a substrate, a step of forming a second layer so as to be in contact with the first layer, and a step of being in contact with the second layer. 3, a step of forming a fourth layer including a thin film transistor so as to be in contact with the third layer, a laser beam (laser beam) on the second layer, the third layer, and the fourth layer. The surface of the fourth layer is bonded to the first film, and the inside of the second layer or the second layer is exposed to at least the second layer. Separating the fourth layer from the substrate with a boundary between the layer and the third layer as a boundary.

Moreover, it has the process of adhere | attaching the surface of a 2nd layer or a 3rd layer to a 2nd film after said process. After this step, the second layer and the third layer are covered with the first film and the second film.

Note that when the fourth layer is separated from the substrate with the inside of the second layer as a boundary, the second film is bonded to the surface of the second layer. In addition, when the fourth layer is separated from the substrate with the boundary between the second layer and the third layer, the second film is adhered to the surface of the third layer.

In the above method for manufacturing a semiconductor device, a layer containing silicon oxide or silicon nitride is formed as the first layer. A layer containing tungsten or molybdenum is formed as the second layer. As the third layer, a layer containing silicon oxide or silicon nitride is formed. As the fourth layer, a thin film transistor and a conductive layer functioning as an antenna are formed.

Note that the step of forming the first layer may be omitted.

The present invention is characterized in that an opening that exposes at least the second layer is formed. Then, when the portion where the second layer is exposed is created, the exposed portion becomes a trigger, and the third layer and the fourth layer are formed from the substrate on which the first layer is formed with the second layer as a boundary. Can be separated.

Note that forming an opening that exposes at least the second layer corresponds to forming an opening from which at least the third layer and the fourth layer are removed.

Further, the present invention is characterized in that laser light is irradiated to form an opening that exposes the second layer. As described above, the present invention using laser light irradiation can form an opening without requiring a plurality of steps as in the photolithography method. Therefore, production time can be shortened and productivity can be significantly improved.

The present invention is characterized in that as the fourth layer, a thin film transistor and a conductive layer functioning as an antenna are formed. With the above characteristics, the semiconductor device manufactured according to the present invention has a function of transmitting and receiving electromagnetic waves.

The present invention can provide a method for manufacturing a semiconductor device with reduced manufacturing costs. In addition, a method for manufacturing a semiconductor device with reduced manufacturing time and improved productivity can be provided.

Embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in the structures of the present invention described below, the same reference numerals are used in common in different drawings.
(Embodiment 1)

An embodiment of the present invention will be described with reference to a cross-sectional view of FIG. 1 and a top view of FIG.

The first layer 11 is formed over one surface of the substrate 10 having an insulating surface (see FIG. 1A). The substrate 10 corresponds to a silicon substrate, a glass substrate, a plastic substrate, a quartz substrate, or the like.

Note that a glass substrate or a plastic substrate is preferably used. A glass substrate or a plastic substrate can be easily formed with a side of 1 meter or more, and can be easily formed with a desired shape such as a square or a circle. Therefore, productivity can be improved by using, for example, a glass substrate or plastic substrate having a side of 1 meter or more as the substrate 10. Such an advantage is a great advantage compared with the case of manufacturing a semiconductor device from a circular silicon substrate.

The first layer 11 is formed of silicon oxide, silicon nitride, silicon oxide containing nitrogen, silicon nitride containing oxygen, or the like by plasma CVD, sputtering, or the like. By providing the first layer 11, impurities contained in the substrate 10 can be prevented from entering the upper layer. Further, although there is a step of irradiating laser light later, it is possible to prevent the substrate 10 from being etched during the step.

Note that the step of forming the first layer 11 may be omitted. Then, the second layer 12 may be formed on one surface of the substrate 10.

Next, the second layer 12 is formed so as to be in contact with the first layer 11. The second layer 12 is formed by tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co) by plasma CVD or sputtering. An element selected from zirconium (Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), silicon (Si) A layer made of an alloy material or a compound material as a component is formed as a single layer or a stacked layer. The crystal structure of the layer containing silicon may be any of amorphous, microcrystalline, and polycrystalline.

When the second layer 12 has a single-layer structure, preferably tungsten, molybdenum, a mixture of tungsten and molybdenum, tungsten oxide, tungsten oxynitride, tungsten nitride oxide, molybdenum oxide, molybdenum oxidation A layer including any of nitride, oxide of molybdenum nitride, oxide of a mixture of tungsten and molybdenum, oxynitride of a mixture of tungsten and molybdenum, and nitride oxide of a mixture of tungsten and molybdenum is formed. Note that the mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum.

In the case where the second layer 12 has a stacked structure, preferably, a first layer is formed of tungsten, molybdenum, a layer containing a mixture of tungsten and molybdenum, and a second layer is formed of tungsten oxide, tungsten nitride, Tungsten nitride oxide, molybdenum oxide, tungsten-molybdenum oxide, tungsten oxynitride, molybdenum oxynitride, tungsten-molybdenum oxynitride.

Next, the third layer 13 is formed so as to be in contact with the second layer 12. The third layer 13 is formed of silicon oxide, silicon nitride, silicon oxide containing nitrogen, silicon nitride containing oxygen, or the like by plasma CVD, sputtering, or the like.

Note that in the case where a stacked structure of tungsten and a tungsten oxide is formed as the second layer 12, a layer containing tungsten is formed as the second layer 12 and a layer containing silicon oxide is formed as the third layer 13. The formation of a layer containing tungsten oxide between the tungsten layer and the layer containing silicon oxide may be utilized. The same applies to the case where a tungsten nitride, a tungsten oxynitride, a layer containing tungsten nitride oxide, or the like is formed. After a layer containing tungsten is formed, a layer containing silicon nitride is formed thereon. A silicon nitride layer containing oxygen and a silicon oxide layer containing nitrogen are preferably formed.

Next, a fourth layer 14 including a transistor is formed so as to be in contact with the third layer 13 (see FIG. 2A). For example, a plurality of thin film transistors, a first insulating film that covers the plurality of thin film transistors, and a source wiring and a drain wiring that are in contact with the first insulating film and are connected to source or drain electrodes of the plurality of thin film transistors are formed. Subsequently, a fourth insulating film that includes a second insulating film that covers the source wiring and the drain wiring, a conductive layer that is in contact with the second insulating film and functions as an antenna, and a third insulating film that covers the conductive layer that functions as an antenna. Layer 14 is formed. In such a case, the completed semiconductor device has a function of transmitting and receiving electromagnetic waves.

Unlike the above, when a semiconductor device having a function of storing data is formed, a memory device (thin film transistor, etc.) and a plurality of elements (thin film transistor, capacitor element, resistance element, etc.) that control the memory element are included. Four layers 14 are formed. In the case of forming a semiconductor device having a function of controlling a circuit, a function of generating a signal, or the like (eg, a CPU, a signal generation circuit, or the like), Four layers 14 are formed.

Note that in the case where a silicon substrate is used as the substrate 10, a field effect transistor using the silicon substrate for a channel portion or a fourth layer 14 including a thin film transistor is formed.

Next, the opening 20 is formed by irradiating laser light so that at least the second layer 12 is exposed (see FIGS. 1B and 2B). As described above, when the opening 20 is formed and a portion where the second layer 12 is exposed is created, the exposed portion becomes a trigger, and the third layer 13 starts from the substrate 10 provided with the first layer 11. And the fourth layer 14 can be easily separated. This separation is performed with the inside of the second layer 12 or between the second layer 12 and the third layer 13 as a boundary.

Note that the side surface of the second layer 12 may be removed a little by irradiation with laser light (see FIG. 1C). Such retreat of the second layer 12 depends on the power of the laser beam, and therefore the power of the laser beam may be appropriately controlled. The purpose of the laser light irradiation is to expose the surface of the second layer 12. Therefore, in the above process, the first layer 11 is divided by the irradiation of the laser beam, but the first layer 11 may not be divided by controlling the power of the laser beam.

In the present invention, at least the second layer 12 may be exposed. However, as described above, the laser beam power is controlled and the side surface of the second layer 12 is slightly removed to perform separation later. The process (separation of the laminated body having the third layer 13 and the fourth layer 14 from the substrate 10) can be performed more easily.

In other words, in the present invention, at least the third layer 13 and the fourth layer 14 are removed to form the opening 20. When the opening 20 is formed, a part of the second layer 12 is exposed.

Moreover, there is no restriction | limiting in particular in the laser used for this invention. The laser is composed of a laser medium, an excitation source, and a resonator. Lasers are classified into gas lasers, liquid lasers, and solid-state lasers according to the medium. Free lasers, semiconductor lasers, and X-ray lasers are classified according to the characteristics of oscillation. In the present invention, any laser is used. Also good. Note that a gas laser or a solid laser is preferably used, and a solid laser is more preferably used.

Gas lasers include helium neon laser, carbon dioxide laser, excimer laser, and argon ion laser. The excimer laser includes a rare gas excimer laser and a rare gas halide excimer laser. A rare gas excimer laser oscillates by three types of excited molecules, argon, krypton, and xenon. Argon ion lasers include rare gas ion lasers and metal vapor ion lasers.

Liquid lasers include inorganic liquid lasers, organic chelate lasers, and dye lasers. Inorganic liquid lasers and organic chelate lasers use rare earth ions such as neodymium, which are used in solid-state lasers, as laser media.

The laser medium used by the solid-state laser is obtained by doping a solid matrix with an active species that acts as a laser. The solid matrix is a crystal or glass. The crystal is YAG (yttrium / aluminum / garnet crystal), YLF, YVO ₄ , YAlO ₃ , sapphire, ruby, or alexandride. In addition, the active species having a laser action are, for example, trivalent ions (Cr ³⁺ , Nd ³⁺ , Yb ³⁺ , Tm ³⁺ , Ho ³⁺ , Er ³⁺ , Ti ³⁺ ).

Nd: YVO ₄ laser has a large induced cross section at the lasing wavelength, a high absorption coefficient and a wide absorption bandwidth at the excitation wavelength, and excellent physical, optical, and mechanical characteristics. It has the advantage of being highly stable at output. Therefore, it is preferable to use an Nd: YVO ₄ laser.

When ceramic (polycrystal) is used as the laser medium, the medium can be formed into a free shape in a short time and at a low cost. When a single crystal is used as the medium, a cylindrical one having a diameter of several mm and a length of several tens of mm is usually used. In addition, when ceramic (polycrystal) is used as a medium, it is possible to make a cylindrical shape that is larger than a single crystal medium.

Further, the concentration of dopants such as Nd and Yb in the medium that directly contributes to light emission cannot be changed greatly regardless of single crystal or polycrystal. Therefore, when a single crystal is used as the medium, there is a limit to improving the laser output by increasing the concentration. However, when ceramic is used as the medium, the medium can be remarkably increased as compared with a single crystal medium, so that a significant improvement in output can be expected.

Furthermore, when ceramic is used as the medium, it is possible to easily form a parallelepiped or rectangular parallelepiped medium. When the oscillation light is made to progress in a zigzag manner inside the medium using such a medium, the oscillation optical path can be lengthened. As a result, amplification is increased and oscillation can be performed with high output.

In addition, since the laser light emitted from the medium having the above shape has a quadrangular cross-sectional shape at the time of emission, it is advantageous for shaping into a linear beam as compared with a round beam. By shaping the emitted laser light by using an optical system, it is possible to easily obtain a linear beam having a short side length of 1 mm or less and a long side length of several mm to several m. Become.

Further, by uniformly irradiating the medium with the excitation light, the linear beam has a uniform energy distribution in the long side direction. By irradiating the semiconductor film with this linear beam, the entire surface of the semiconductor film can be annealed more uniformly. When uniform annealing (irradiation with a laser) is required up to both ends of the linear beam, it is preferable to arrange slits at both ends to shield the energy attenuation portion.

As the laser used in the present invention, a continuous wave laser beam or a pulsed laser beam can be used. The laser light irradiation conditions, such as frequency, power density, energy density, beam profile, and the like, are the thicknesses of the first layer 11, the second layer 12, the third layer 13, and the fourth layer 14, their materials, and the like. Is controlled as appropriate.

Next, a first film 15 (which may be referred to as a first substrate 15, a first base 15, a fifth layer 15, or a fifth layer 15 containing a resin) is formed on the surface of the fourth layer 14. The third layer 13 and the fourth layer are bonded to each other from the substrate 10 provided with the first layer 11 inside the second layer 12 or at the boundary between the second layer 12 and the third layer 13. 14 is separated (see FIG. 1D). A roller may be used for such a separation process. By rotating the roller, the separation process can be performed continuously.

Next, on the surface of the second layer 12 or the third layer 13, a second film 16 (second substrate 16, second base 16, sixth layer 16, sixth layer 16 containing resin) is formed. Is attached (see FIG. 1E). Specifically, when separation of the laminate having the third layer 13 and the fourth layer 14 from the substrate 10 is performed inside the second layer 12, the second film 16 is Is adhered to the surface of the layer 12. Further, when performed at the boundary between the second layer 12 and the third layer 13, the second film 16 is adhered to the surface of the third layer 13.

The laminated body which has the 3rd layer 13 and the 4th layer 14 is sealed with the 1st film 15 and the 2nd film 16 through the said process. Next, the cutting unit 17 cuts the portion where the first film 15 and the second film 16 are in close contact. The cutting means 17 corresponds to a laser irradiation device, a dicer, a wire saw, a knife, a cutter, scissors and the like.

As a base material of each of the first film 15 and the second film 16, materials such as polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, ethylene vinyl acetate, urethane, polyethylene terephthalate, and fibrous materials ( For example, paper) can be used. The film may be a single layer film or a film in which a plurality of films are laminated. Further, an adhesive layer may be provided on the surface. Adhesive layer is thermosetting resin, UV curable resin, vinyl acetate resin adhesive, vinyl copolymer resin adhesive, epoxy resin adhesive, urethane resin adhesive, rubber adhesive, acrylic resin adhesive, etc. This corresponds to a layer containing an adhesive.

The surfaces of the first film 15 and the second film 16 may be coated with silicon dioxide (silica) powder. The coating can maintain waterproofness even in a high temperature and high humidity environment. Further, the surface thereof may be coated with a conductive material such as indium tin oxide. The coated material can be charged with static electricity to protect the thin film integrated circuit from static electricity. The surface may be coated with a material containing carbon as a main component (for example, diamond-like carbon). The coating increases the strength and can suppress deterioration and destruction of the semiconductor device. The first film 15 and the second film 16 may be formed of a material obtained by mixing a base material (for example, a resin) with silicon dioxide, a conductive material, or a material containing carbon as a main component. Good.

The sealing of the laminated body having the third layer 13 and the fourth layer 14 by the first film 15 and the second film 16 is performed on each surface layer of the first film 15 and the second film 16, Alternatively, it is performed by melting the adhesive layers on the surfaces of the first film 15 and the second film 16 by heat treatment. Further, if necessary, pressure treatment is performed for adhesion.

In some cases, the second film 16 may not be provided. For example, when the laminated body having the third layer 13 and the fourth layer 14 is separated from the substrate 10 using the first film 15 and then the laminated body is directly attached to an article, the second film The film 16 may not be provided.

Cost can be reduced by the present invention including the above manufacturing steps. For example, ClF ₃ gas used as an etchant is very expensive. However, since the present invention does not require an etchant, a method for manufacturing a semiconductor device with reduced costs can be provided.

Further, according to the present invention, manufacturing time can be shortened and productivity can be improved. For example, the process of removing the release layer by gradually retreating with an etching agent requires several hours. However, according to the present invention, a portion where the second layer 12 is exposed can be easily formed by laser light, and can be easily separated by using the exposed portion as a trigger. The time required for the separation is about several tens of seconds to several minutes. Accordingly, it is possible to provide a method for manufacturing a semiconductor device in which the manufacturing time is shortened and the productivity is significantly improved.
(Embodiment 2)

An embodiment of the present invention will be described with reference to a cross-sectional view of FIG. 3 and a top view of FIG.

The first layer 11 is formed over one surface of the substrate 10 having an insulating surface (see FIGS. 3A and 4A). Next, the second layer 12 is formed so as to be in contact with the first layer 11. Next, the third layer 13 is formed so as to be in contact with the second layer 12. Next, a fourth layer 14 including a thin film transistor is formed so as to be in contact with the third layer 13.

Next, the film 18 is disposed on the fourth layer 14. Next, an opening 21 is formed by irradiating the film 18 with laser light so that the film 18 is divided. By forming the opening 21, the film 18 is separated into an inner film (not shown) and an outer film 19. Then, the inner film is removed (see FIGS. 3B and 4B).

Next, the opening 22 is formed by irradiating with laser light so that at least the second layer 12 is exposed (see FIGS. 3C and 4C).

Next, the surface of the fourth layer 14 is adhered to the first film 15, and the inside of the second layer 12, the boundary between the first layer 11 and the second layer 12, or the second layer 12. And the third layer 13 are separated from the substrate 10 provided with the first layer 11 from the stacked layer having the third layer 13 and the fourth layer 14 (see FIG. 3D).

Next, the surface of the third layer 13 is bonded to the second film 16 (see FIG. 3E). Next, the cutting unit 17 cuts the portion where the first film 15 and the second film 16 are in close contact.

In the above manufacturing method, the film 18 is provided over the fourth layer 14. Due to the above feature, the substrate 10 and the first film 15 can be prevented from adhering when the surface of the fourth layer 14 is adhered to the first film 15.
(Embodiment 3)

A method for manufacturing a semiconductor device of the present invention will be described with reference to FIGS. More specifically, a method for manufacturing a semiconductor device including a thin film transistor and a conductive layer functioning as an antenna will be described with reference to drawings. Note that a thin film transistor is an element included in each circuit included in a semiconductor device such as a power supply circuit, a demodulation circuit, and a modulation circuit.

The first layer 11 is formed on one surface of the substrate 10 (see FIG. 5A). Next, the second layer 12 is formed so as to be in contact with the first layer 11. Subsequently, the third layer 13 is formed so as to be in contact with the second layer 12.

Next, thin film transistors 701 to 705 are formed over the third layer 13. Thin film transistors 701 to 705 are transistors using a crystalline semiconductor layer for a channel portion. The crystalline semiconductor layer is formed by crystallization after forming an amorphous semiconductor layer by sputtering, LPCVD, plasma CVD, or the like. The crystallization method is a laser crystallization method, a thermal crystallization method using a rapid thermal annealing (RTA) or furnace annealing furnace, a thermal crystallization method using a metal element that promotes crystallization, or a metal element that promotes crystallization. A combination of a thermal crystallization method using a laser and a laser crystallization method.

Next, an insulating layer is formed as a single layer or a stacked layer so as to cover the thin film transistors 701 to 705. The insulating layer covering the thin film transistors 701 to 705 is made of silicon oxide, silicon nitride, polyimide, polyamide, benzocyclobutene, acrylic, epoxy, siloxane, or the like by an SOG (Spin On Glass) method or a droplet discharge method. A single layer or a stacked layer is formed. Siloxane is a resin containing a Si—O—Si bond. Siloxane has a skeletal structure composed of a bond of silicon (Si) and oxygen (O), and as a substituent, an organic group containing at least hydrogen (for example, an alkyl group or aromatic hydrocarbon), a fluoro group, or An organic group containing at least hydrogen and a fluoro group are used. For example, when the insulating layer covering the thin film transistors 701 to 705 has a three-layer structure, a layer containing silicon oxide is formed as the first insulating layer 749, and a layer containing resin is formed as the second insulating layer 750. A layer containing silicon nitride is formed as the third insulating layer 751.

Next, the insulating layers 749 to 751 are etched by photolithography to form openings that expose the source and drain regions of the thin film transistors 701 to 705. Subsequently, a conductive layer is formed so as to fill the opening, and the conductive layer is patterned to form conductive layers 752 to 761 functioning as a source wiring or a drain wiring.

Next, an insulating layer 762 is formed so as to cover the conductive layers 752 to 761 (see FIG. 5B). The insulating layer 762 is formed as a single layer or a stacked layer using an inorganic material or an organic material by an SOG method, a droplet discharge method, or the like.

Next, the insulating layer 762 is etched by photolithography to form openings that expose the conductive layers 757, 759, and 761. Subsequently, a conductive layer is formed so as to fill the opening. The conductive layer is formed using a conductive material by a plasma CVD method, a sputtering method, or the like. Next, the conductive layer is patterned to form conductive layers 763 to 765.

Next, an insulating layer 766 is formed so as to cover the conductive layers 763 to 765. The insulating layer 766 is formed as a single layer or a stacked layer using an inorganic material or an organic material by an SOG method, a droplet discharge method, or the like. Subsequently, the insulating layer 766 is etched by photolithography to form openings 767 to 769 that expose the conductive layers 763 to 765.

Next, a conductive layer 786 functioning as an antenna is formed in contact with the conductive layer 765 (see FIG. 6A). The conductive layer 786 is formed using a conductive material by a plasma CVD method, a sputtering method, a printing method, a droplet discharge method, a plating method, or the like. Preferably, the conductive layer 786 is an element selected from aluminum (Al), titanium (Ti), silver (Ag), and copper (Cu), or an alloy material or a compound material containing these elements as a main component. Or it forms by lamination. For example, it is formed by a screen printing method using a paste containing fine particles of silver, aluminum, titanium, and copper, and then heat-treated at 50 to 350 ° C. Alternatively, an aluminum layer is formed by a sputtering method, and the aluminum layer is formed by patterning.

Next, a layer 787 containing an organic compound is formed so as to be in contact with the conductive layers 763 and 764 (see FIG. 6B). The layer 787 containing an organic compound is formed by a droplet discharge method, an evaporation method, or the like. The layer 787 including an organic compound corresponds to, for example, a layer including a light-emitting substance, a substance having a high hole-transport property, a substance having a high hole-injection property, a substance having a high electron-transport property, and a substance having a high electron-injectability. Examples of the light-emitting substance include N, N′-dimethylquinacridone (abbreviation: DMQd), 3- (2-benzothiazolyl) -7-diethylaminocoumarin (abbreviation: coumarin 6), and tris (8-quinolinolato) aluminum (abbreviation: Alq). ₃ ) etc. Examples of the substance having a high hole-transport property include 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: α-NPD), N, N′-bis (3- Methylphenyl) -N, N′-diphenyl- [1,1′-biphenyl] -4,4′-diamine (abbreviation: TPD). A substance having a high hole-injecting property corresponds to phthalocyanine, copper phthalocyanine, molybdenum oxide, tungsten oxide, titanium oxide, or the like. A substance having a high electron transporting property corresponds to, for example, tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ). The substance having a high electron-injecting property corresponds to, for example, an alkali metal or alkaline earth metal compound such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ₂ ), or the like.

Subsequently, a conductive layer 771 is formed so as to be in contact with the layer 787 containing an organic compound. The conductive layer 771 is formed by a sputtering method, an evaporation method, or the like.

Through the above steps, the conductive layer 763, the layer 789 including the organic compound layer 787 and the conductive layer 771, and the layer 789 including the conductive layer 764, the organic compound layer 787 and the conductive layer 771 are completed.

Next, an insulating layer 772 functioning as a protective layer is formed by an SOG method, a droplet discharge method, or the like so as to cover the stacked bodies 789 and 790 and the conductive layer 786 functioning as an antenna. The insulating layer 772 is formed using a layer containing carbon such as diamond-like carbon (DLC), a layer containing silicon nitride, a layer containing silicon nitride oxide, or an organic material (preferably an epoxy resin).

Through the above manufacturing steps, the fourth layer 14 including the thin film transistors 701 to 705, the element group including the stacked bodies 789 and 790, and the conductive layer 786 functioning as an antenna is completed. Note that in the above manufacturing process, since the heat resistance of the layer 787 including an organic compound is not strong, the step of forming the layer 787 including an organic compound is performed after the step of forming the conductive layer 786 functioning as an antenna. Features.

Next, irradiation with laser light is performed so that at least the second layer 12 is exposed, so that openings 773 and 774 are formed (see FIG. 7A).

Note that the insulating layer 772 is provided so that the stacked body including the third layer 13 and the fourth layer 14 is not scattered after the openings 773 and 774 exposing the second layer 12 are formed. . Since the stacked body including the third layer 13 and the fourth layer 14 is thin and light, after the openings 773 and 774 are formed, the stacked portion may be scattered by using the exposed portion of the second layer 12 as a trigger. However, by forming the insulating layer 772, the fourth layer 14 is weighted, and scattering from the substrate 10 can be prevented. In addition, the fourth layer 14 is thin and light by itself, but by forming the insulating layer 772, a stress is not generated and the wound layer is not formed, and a certain degree of strength can be secured.

Next, the surface of the fourth layer 14 is adhered to the first film 15, and the laminate including the third layer 13 and the fourth layer 14 is completely peeled from the substrate 10 (FIG. 7B )reference). Subsequently, the second film 16 is adhered so as to cover the third layer 13 and the fourth layer 14, and then one or both of heat treatment and pressure treatment are performed, and the fourth layer 14 is It seals with the 1st film 15 and the 2nd film 16 (refer FIG. 8).

When the first film 15 and the second film 16 are made of plastic, they are thin, lightweight, and can be bent, so that they are excellent in design and easy to be processed into a flexible shape. Moreover, it is excellent in impact resistance, and can be easily affixed or embedded in various articles, and can be used in various fields.

In the above structure, the stacked bodies 789 and 790 are elements in which a layer containing an organic compound is provided between a pair of conductive layers. In the case where the stacks 789 and 790 are used as memory elements, data is written by short-circuiting a pair of conductive layers. Data is read by reading the difference in resistance value between the stacked bodies 789 and 790. The stacked bodies 789 and 790 are characterized in that they are nonvolatile, data cannot be rewritten, and data can be additionally written as long as there is a memory element to which data is not written. Moreover, since it consists of a laminated body of 3 layers, it is characterized by the easy production. Further, since the area of the stacked portion can be easily reduced, high integration can be easily realized. Note that the conductive layers 763 to 765 are one of a pair of conductive layers included in the memory element. Therefore, the conductive layers 763 to 765 are preferably formed as a single layer or a stacked layer using titanium, or an alloy material or compound material containing titanium as a main component. Titanium has a low resistance value, which leads to a reduction in the size of the memory element and can achieve high integration.

In addition, the stacked bodies 789 and 790 may be used as a light-emitting element. By using the stacked bodies 789 and 790 as light-emitting elements, a semiconductor device can be used as a display device. In addition, if a flexible film is used as the first film 15 and the second film 16, the semiconductor device can be rolled up, so that it is convenient to carry, is not easily broken, and can display a curved surface. . Therefore, it can be used as a flexible display for portable devices, an electronic book, an electronic newspaper, an electronic poster, and the like.

Note that in the case where the stacked bodies 789 and 790 are used as a light-emitting element, the conductive layers 763 and 764 or the conductive layer 771 are formed using a light-transmitting material.

In the cross-sectional structure, the thin film transistors 703 and 704 and the stacked bodies 789 and 790 are provided so as to overlap with each other. However, in the case where the stacked bodies 789 and 790 are used as light emitting elements and the direction of light emitted from the stacked bodies 789 and 790 is the direction of the thin film transistors 703 and 704, the stacked bodies 789 and 790 and the thin film transistors 703 and 704 It is necessary to provide a region where the two do not overlap. In addition, when the direction of light emitted from the stacked bodies 789 and 790 is the direction of the insulating layer 772, the insulating layer 772 needs to have a light-transmitting property.

The structure of the semiconductor device of the present invention will be described with reference to FIG. The semiconductor device 100 of the present invention includes a circuit 101 including a command analysis circuit and a storage control circuit, a storage circuit 103, an antenna 104, a power supply circuit 109, a demodulation circuit 110, and a modulation circuit 111. The semiconductor device 100 includes the antenna 104 and the power supply circuit 109 as essential components, and other components are provided as appropriate according to the use of the semiconductor device 100.

A circuit 101 including a command analysis circuit and a storage control circuit performs command analysis, control of the storage circuit 103, output of data to be transmitted to the modulation circuit 111, and the like based on a signal input from the demodulation circuit 110.

The memory circuit 103 includes a circuit 107 including a memory element and a control circuit 108 that controls data writing and data reading. The memory circuit 103 stores at least an identification number of the semiconductor device itself. The identification number is used to distinguish from other semiconductor devices. The memory circuit 103 includes an organic memory, a DRAM (Dynamic Random Access Memory), a SRAM (Static Random Access Memory), a FeRAM (Ferroelectric Random Access Memory), and a mask ROM (Read Only Memory PROM). It has one or more types selected from EPROM (Electrically Programmable Read Only Memory), EEPROM (Electrically Erasable Programmable Read Only Memory) and flash memory. An organic memory has a structure in which a layer containing an organic compound is sandwiched between a pair of conductive layers. Since the organic memory has a simple structure, the manufacturing process can be simplified and the cost can be reduced. In addition, since the structure is simple, the area of the stacked body can be easily reduced, and a large capacity (high integration) can be easily realized. In addition, it is non-volatile and does not require a built-in battery. Therefore, it is preferable to use an organic memory as the memory circuit 103.

The antenna 104 converts the carrier wave supplied from the reader / writer 112 into an AC electrical signal. Further, load modulation is applied by the modulation circuit 111. The power supply circuit 109 generates a power supply voltage using the AC electrical signal converted by the antenna 104 and supplies the power supply voltage to each circuit.

The demodulation circuit 110 demodulates the AC electrical signal converted by the antenna 104 and supplies the demodulated signal to the circuit 101 including the instruction analysis circuit and the storage control circuit. The modulation circuit 111 applies load modulation to the antenna 104 based on a signal supplied from a circuit 101 including a command analysis circuit and a storage control circuit.

The reader / writer 112 receives the load modulation applied to the antenna 104 as a carrier wave. Further, the reader / writer 112 transmits a carrier wave to the semiconductor device 100. The carrier wave is an electromagnetic wave emitted from the reader / writer 112.

As described above, the semiconductor device of the present invention having a function of transmitting and receiving electromagnetic waves wirelessly includes an RFID (Radio Frequency IDentification), an RF chip, an RF tag, an IC chip, an IC tag, an IC label, a wireless chip, a wireless tag, and an electronic chip. Called electronic tag, wireless processor, wireless memory. This embodiment can be freely combined with Embodiment Modes 1 to 3.

The semiconductor device 25 of the present invention has a wide range of uses by utilizing the function of transmitting and receiving electromagnetic waves. For example, keys (see FIG. 10A), banknotes, coins, securities, bearer bonds, certificates (driver's license, resident's card, etc., see FIG. 10B), books, containers (for example, , Petri dish, see FIG. 10 (C)), packaging containers (wrapping paper, bottles, etc.), recording media (discs, video tapes, etc.), vehicles (bicycles, etc.), accessories (such as bags and glasses), FIG. D)))), food products, clothes, daily necessities, electronic devices (liquid crystal display devices, EL display devices, television devices, portable terminals, etc.), etc., and are fixed to articles by being embedded. For example, if it is a banknote, a coin, and a certificate, it is fixed by sticking on the surface or embedding. In the case of books, they are fixed by pasting or embedding them on paper. If it is packaging containers, it will be fixed by sticking or embedding in the organic resin which comprises packaging containers. In addition, by storing the identification number in the memory circuit included in the semiconductor device, and by providing the semiconductor device with an identification function, it can be used in an article management system, an authentication function system, a distribution system, etc. Multifunctionality and high added value can be achieved. This embodiment can be freely combined with Embodiment Modes 1 to 3 and Embodiment 1.

In this example, the results of the experiment will be described. In the experiment, a sample in which a first layer, a second layer, and a third layer were stacked on a glass substrate was used. As the first layer, a layer made of silicon oxide was formed by a plasma CVD method. As the second layer, a layer made of tungsten was formed by a sputtering method. As the third layer, a layer made of an epoxy resin was formed.

Next, an Nd: YVO ₄ laser with a wavelength of 266 nm was used to irradiate laser light to form an opening that exposes the substrate. At this time, the scanning speed of the laser beam was 15 mm / sec, and the power was 2.43 to 2.68 W.

Next, an attempt was made to bond the third layer and the film to separate the third layer from the substrate. As a result, the third layer could be separated from the substrate. Note that the side surfaces of the first layer, the second layer, and the third layer are exposed by the formation of the opening, and the side surfaces of the second layer are the first layer and the third layer. It was retracted from the side (see FIG. 1C).

In the first embodiment, a step of forming an opening 20 by irradiating laser light so that at least the second layer 12 is exposed (hereinafter referred to as step A, see FIG. 1B); A step of adhering the first film 15 to the surface of the fourth layer 14 (hereinafter referred to as a step B, see FIG. 1D) and a third film 15 are used to form a third film 15 from the substrate 10. Although the process of separating the stacked body including the layer 13 and the fourth layer 14 (hereinafter referred to as process C, see FIG. 1D) has been described, the process A, B, and C are described below with reference to FIG. Will be described in more detail.

First, the opening 20 is formed by irradiating laser light so that at least the second layer 12 is exposed (see FIG. 11A). When the opening 20 is formed, distortion occurs at one or both ends of the fourth layer 14 and the third layer 13. Due to the occurrence of strain, one or both ends of the fourth layer 14 and the third layer 13 are lifted upward. That is, one or both ends of the fourth layer 14 and the third layer 13 are wound. Since the direction in which the distortion is generated is the same as the direction in which the separation is performed later, the subsequent separation can be easily performed by the generation of the distortion. Therefore, the thickness of one or both of the fourth layer 14 and the third layer 13 may be set to a thickness such that one or both of the fourth layer 14 and the third layer 13 are distorted. . The generation of strain is caused by stress. In order to generate distortion, a material containing a resin may be used for the fourth layer 14.

Next, the first film 15 is bonded to the surface of the fourth layer 14 (see FIG. 11B).

Next, the stacked body including the third layer 13 and the fourth layer 14 is separated from the substrate 10 by using the first film 15 (see FIG. 11C). Separation takes place inside the second layer 12 and / or at the boundary between the second layer 12 and the third layer 13. Separation proceeds in order from the opening 20. That is, the separation proceeds in order starting from the opening 20.

In this embodiment, the relationship between the displacement (μm, vertical axis) of the strain (deflection) of the layer made of organic resin on the substrate and the position (mm, horizontal axis) of the layer made of organic resin on the substrate is shown in FIG. Will be described with reference to FIG. First, three samples (samples A, B, and C) in which a layer made of an organic resin was formed to a thickness of 30 nm on a glass substrate were formed. The layer made of an organic resin was formed by screen printing using an epoxy resin.

Subsequently, Sample A was heat-treated at 110 ° C. for 10 minutes using a heating furnace. Sample B was heat-treated at 110 ° C. for 10 minutes using a heating furnace, and then left in water for 4 hours. Sample C was heat-treated at 110 ° C. for 10 minutes using a heating furnace, then left in water for 4 hours, and then heat-treated at 110 ° C. for 10 minutes using a heating furnace. It was.

Subsequently, the displacement amount of distortion of the epoxy resins of Samples A to C was measured using a laser displacement meter. As a result, the sample A had a distortion of 120 μm at the maximum. Sample B had a maximum distortion of 20 μm. Sample C had a maximum distortion of 130 μm.

From the results of Sample A, it was found that the layer made of epoxy resin was distorted by heat treatment. Such distortion helps to facilitate the subsequent separation process.

Further, from the results of Sample B, it was found that when the sample was left in water, the epoxy resin layer absorbed moisture and the amount of change in strain decreased. For this reason, it has been found that when the layer made of the epoxy resin absorbs moisture, it is difficult to easily perform the subsequent separation process.

From the results of Sample C, it was found that when the sample was left in water and then subjected to heat treatment again, absorbed moisture was released and distortion occurred again. Therefore, when the layer made of an organic resin absorbs moisture, the separation treatment may be performed after the heat treatment is performed again.

8A and 8B illustrate a method for manufacturing a semiconductor device of the present invention (Embodiment Mode 1). 8A and 8B illustrate a method for manufacturing a semiconductor device of the present invention (Embodiment Mode 1). 8A and 8B illustrate a method for manufacturing a semiconductor device of the present invention (Embodiment Mode 2). 8A and 8B illustrate a method for manufacturing a semiconductor device of the present invention (Embodiment Mode 2). 8A and 8B illustrate a method for manufacturing a semiconductor device of the present invention (Embodiment 3). 8A and 8B illustrate a method for manufacturing a semiconductor device of the present invention (Embodiment 3). 8A and 8B illustrate a method for manufacturing a semiconductor device of the present invention (Embodiment 3). 8A and 8B illustrate a method for manufacturing a semiconductor device of the present invention (Embodiment 3). FIG. 10 illustrates a semiconductor device of the present invention (Example 1); (Example 2) which shows the articles | goods using the semiconductor device of this invention. 8A and 8B illustrate a method for manufacturing a semiconductor device of the present invention (Example 4). The graph which shows the result of an experiment (Example 5).

Claims (6)

Forming a first layer containing a metal on a substrate;
Forming a second layer containing an inorganic material on the first layer;
Forming a third layer including a thin film transistor on the second layer;
Irradiating the first layer, the second layer, and the third layer with laser light to form an opening for removing at least the second layer and the third layer;
Forming a fourth layer containing a resin on the third layer;
A method for manufacturing a semiconductor device, wherein the third layer and the fourth layer are separated from the substrate. Forming a first layer containing a first inorganic material on a substrate;
Forming a second layer containing a metal on the first layer;
Forming a third layer containing a second inorganic material on the second layer;
Forming a fourth layer including a thin film transistor on the third layer;
Irradiating the second layer, the third layer, and the fourth layer with laser light to form an opening for removing at least the third layer and the fourth layer;
Forming a fifth layer containing a resin on the fourth layer;
A method for manufacturing a semiconductor device, wherein the third layer, the fourth layer, and the fifth layer are separated from the substrate. In claim 1,
A semiconductor device characterized in that the third layer and the fourth layer are separated from the substrate with the inside of the first layer or between the first layer and the second layer as a boundary. Manufacturing method. In claim 1,
Forming a layer containing tungsten or molybdenum as the metal;
As the inorganic material, silicon oxide or silicon nitride is formed,
A method for manufacturing a semiconductor device, wherein a conductive layer functioning as the thin film transistor and an antenna is formed as the third layer. In claim 2,
Separating the third layer, the fourth layer, and the fifth layer from the substrate with the inside of the second layer or between the second layer and the third layer as a boundary. A method for manufacturing a semiconductor device. In claim 2,
Forming the first silicon oxide or the first silicon nitride as the first inorganic material;
Forming a layer containing tungsten or molybdenum as the metal;
Forming the second silicon oxide or the second silicon nitride as the second inorganic material;
A method for manufacturing a semiconductor device, wherein a conductive layer functioning as the thin film transistor and an antenna is formed as the fourth layer.

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