JP2006351751A - Apparatus and method for processing substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a substrate processing apparatus and a substrate processing method for controlling lowering of manufacturing yield by detecting displacement of substrate placed on a substrate holding means, and also to provide the substrate processing apparatus and method in which the substrate does not collide with the wall surface or the like of a module even when displacement of the predetermined amount or more is generated. <P>SOLUTION: The substrate processing apparatus comprises a substrate transferring means for transferring one by one among a plurality of modules or within the module and a control means 70 for controlling such transfer operation. The substrate transferring means is provided to a plurality of locations of the substrate holding means 52 superimposing on the substrate placed at the correct location, and is provided with a plurality of sensors S1 to S3 for respectively detecting electrostatic capacitance for the reference potential. The control means 70 detects displacement of substrate on the basis of the detection result from a plurality of sensors S1 to S3. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for performing a resist solution coating process, a developing process after exposure, and the like on a substrate such as a semiconductor wafer or an LCD substrate (glass substrate for liquid crystal display).

In a manufacturing process of a semiconductor device or an LCD substrate, after forming a predetermined film on a substrate that is an object to be processed, a photoresist that is a processing liquid (hereinafter referred to as a resist) is applied to form a resist film, A circuit pattern is formed by a so-called photolithography technique in which a resist film is exposed corresponding to a circuit pattern and developed. In this photolithographic technique, the substrate is processed through a series of processes such as cleaning processing → dehydration baking → adhesion (hydrophobization) processing → resist application → prebaking → exposure → baking before development → development → post baking. A predetermined circuit pattern is formed.
Such a process is generally performed using a resist pattern forming apparatus in which an exposure apparatus is connected to a coating and developing apparatus that performs resist coating and development. Such an apparatus is disclosed in, for example, Patent Document 1.

By the way, in this series of processing steps, each substrate is transported between modules performing each processing by a robot arm. In order to smoothly receive and transfer the substrate, it is necessary to accurately control the advance / retreat timing of each arm. Conventionally, whether each arm carrying the substrate holds the substrate or not is determined. It has a sensor to detect.
A configuration in which a sensor is provided on an arm on which a substrate is placed is disclosed in Patent Document 2, for example.
JP 2004-193597 A JP-A-9-148415

  Nowadays, the speed of loading and unloading of substrates with respect to each module is improved by installing the substrate detection sensor, improving the material of the arm, and improving the performance of the actuator that operates the arm. However, as the speed of the loading / unloading work increases, the displacement of the substrate when it is placed on the arm or the displacement of the substrate due to the air bearing phenomenon that occurs when the substrate is transferred from the arm to the module. It has become a big problem.

However, as described above, in the apparatus disclosed in Patent Document 2, the presence / absence of a substrate can be detected by a conventional substrate detection sensor, but an accurate displacement amount when the substrate is displaced is detected. There is a problem in that mounting on the module is performed while the substrate is displaced. That is, when the substrate is placed on the module with its position shifted, non-uniform processing is performed on the processing surface of the substrate in the heat treatment, which causes a decrease in yield. For example, in the case of baking after resist application, film thickness unevenness occurs due to differences in solvent evaporation, and in the case of post-exposure baking after exposure, pattern defects occur due to differences in acid generation of chemically amplified resists. It was.
In addition, if a positional deviation of a predetermined amount or more occurs, the substrate may collide with the wall surface of the module.

  The present invention has been made under the circumstances as described above, and holds a substrate in a substrate processing apparatus that controls the conveyance of a substrate between or within a plurality of modules that perform single-wafer processing on a substrate. It is an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of detecting a positional deviation state of a substrate placed on a substrate holding means and suppressing the above-described decrease in yield due to the occurrence of a defect. It is another object of the present invention to provide a substrate processing apparatus and a substrate processing method in which a substrate does not collide with a wall surface of a module or the like even when a positional deviation of a predetermined amount or more occurs.

In order to solve the above-described problems, a substrate processing apparatus according to the present invention includes a substrate transfer unit that transfers a substrate between or within a plurality of modules that perform processing on a substrate in a single-wafer manner, and the substrate transfer unit. The substrate processing apparatus includes a control means for controlling the operation of the substrate, wherein the substrate transport means overlaps the substrate holding means for holding the substrate and the substrate when the substrate is placed at a correct position. A plurality of sensors provided at a plurality of locations of the substrate holding means, each of which detects a capacitance with respect to a reference potential, and the control means determines the position of the substrate based on detection results from the plurality of sensors. It is characterized by detecting a shift state.
By configuring in this way, it is possible to detect the positional deviation of the substrate before processing by the module, and it is possible to prevent the processing from being performed in a positional deviation state, thereby suppressing a decrease in yield. be able to.

The control means includes storage means for storing a reference table that records a relationship between a capacitance ratio of the plurality of sensors and a positional deviation amount of the substrate, and information on detection results from the plurality of sensors. It is desirable to compare the reference table information stored in the storage means and detect the amount of substrate displacement.
With this configuration, the amount of misalignment is immediately obtained, and when there is misalignment, the information can be used for misalignment correction, or the operation of the substrate transfer device is stopped. It can be used to determine whether or not to make it happen.

Further, when the control unit detects that the substrate placed on the substrate holding unit is displaced by a predetermined positional deviation amount, the control unit holds the substrate by another substrate transport unit and also detects the position of the substrate. It is desirable to correct the deviation and place it on the substrate holding means.
With this configuration, it is possible to correct the positional deviation of the substrate without depending on human work, and it is possible to efficiently perform the positional deviation correction work.
In addition, it is preferable that the said sensor is formed by what attached the electrode to the resin raw material.

In addition, when the control unit detects that the substrate placed on the substrate holding unit is displaced by a predetermined displacement amount, the control unit stops the operation of the substrate transport unit, and a unit number indicating a module position It is desirable to cause the alarm to be displayed and to generate a warning sound and / or to turn on a warning light.
Such a configuration can solve the problem that the substrate collides against the wall surface of the module because the substrate is displaced.

In order to solve the above-described problems, a substrate processing method according to the present invention is a substrate processing method for controlling the transfer of a substrate between a plurality of modules that perform processing on a substrate in a single wafer mode or within the module. The electrostatic capacitance in a state where the substrate is placed from a plurality of sensors provided at a plurality of locations of the first substrate holding means for holding the substrate and detecting the capacitance with respect to each reference potential. And a step of detecting a positional deviation state of the substrate based on detection results from the plurality of sensors.
According to such a method, it is possible to detect the positional deviation of the substrate before processing by the module, and it is possible to prevent the processing from being performed in a positional deviation state, thereby suppressing a decrease in yield. be able to.

Further, in the step of detecting the positional deviation state of the substrate, a reference table that records a relationship between a capacitance ratio in the plurality of sensors and a positional deviation amount of the substrate, and detection results from the plurality of sensors. It is desirable to execute a step of comparing information and a step of detecting the amount of positional deviation of the substrate based on the comparison result.
In this way, the amount of misalignment can be obtained immediately, and if there is misalignment, the information can be used for misalignment correction, or the operation of the substrate transfer device is stopped. It can be used to determine whether or not.

In the step of detecting the positional deviation state of the substrate, if it is detected that the substrate placed on the first substrate holding means is displaced by a predetermined positional deviation amount, the second substrate is detected. Causing the holding means to hold the substrate, causing the second substrate holding means to correct the predetermined displacement, and placing the substrate on the first substrate holding means. It is desirable.
By doing so, it is possible to correct the positional deviation of the substrate without depending on human work, and it is possible to efficiently perform the positional deviation correction work.

Further, in the step of detecting the positional deviation state of the substrate, if it is detected that the substrate placed on the first substrate holding means is displaced by a predetermined positional deviation amount, the substrate conveying means It is desirable to execute a step of stopping the operation of the above, a step of displaying a unit number indicating the module position, and a step of generating a warning sound and / or turning on a warning light.
By doing in this way, since the board | substrate has shifted | deviated, the problem that a board | substrate collides with the wall surface etc. of a module can be solved.

  According to the present invention, in a substrate processing apparatus that controls substrate transfer between or within a plurality of modules that process a substrate in a single wafer mode, the position of a substrate placed on a substrate holding means that holds the substrate is shifted. It is possible to obtain a substrate processing apparatus and a substrate processing method capable of detecting a state and suppressing a decrease in yield. In addition, it is possible to obtain a substrate processing apparatus and a substrate processing method in which the substrate does not collide with the wall surface of the module or the like even when a positional deviation of a predetermined amount or more occurs.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 to FIG. 3 are views showing the overall configuration of a coating and developing apparatus to which a substrate processing apparatus and a substrate processing method of the present invention are applied. FIG. 1 is a plan view thereof, FIG. 2 is a front view, and FIG. It is.

  As shown in the figure, the coating and developing apparatus 1 includes a cassette station 10 and a semiconductor wafer (hereinafter referred to as a wafer) W that is a substrate to be processed in a coating and developing process. For transferring the wafer W between a processing station 11 in which various processing units (modules) of the type are arranged in multiple stages at predetermined positions and an exposure apparatus (not shown) provided adjacent to the processing station 11 The interface unit 12 is integrally connected.

  The cassette station 10 accommodates a plurality of wafers W in the wafer cassette CR, for example, in units of 25, and carries the wafer cassette CR into or out of the system from the outside, or carries the wafer W into the wafer cassette CR. It is a device for carrying out. In the cassette station 10, as shown in FIG. 1, a plurality of, for example, up to four wafer cassettes CR are arranged in a line in the X direction at the position of the projection 20a on the cassette mounting table 20 with the respective wafer entrances facing the processing station 11 side. The wafer carrier 21 that is mounted and movable in the cassette arrangement direction (X direction) and the wafer arrangement direction (Z direction) of the wafers stored in the wafer cassette CR selectively accesses each wafer cassette CR. It has become. Further, the wafer transfer body 21 is configured to be rotatable in the θ direction. As will be described later, the alignment unit (ALIM) and the extension unit (belonging to the multi-stage unit portion of the third group G3 on the processing station 11 side) EXT) can also be accessed.

  In the processing station 11, as shown in FIG. 1, a vertical transfer type main wafer transfer mechanism 22 is provided in the center, and all the processing units are arranged in multiple stages around one set or a plurality of sets. Yes. In this example, there are five sets (G1, G2, G3, G4, G5) of multistage arrangements, and the multistage units of the first and second sets G1, G2 are juxtaposed on the system front (front side in FIG. 1) side. The multistage unit of the third group G3 is disposed adjacent to the cassette station 10, the multistage unit of the fourth group G4 is disposed adjacent to the interface unit 12, and the multistage unit of the fifth group G5 is disposed on the back side. Is arranged. The fifth group G5 is configured to be movable along the rail 25 for maintenance of the main wafer transfer mechanism 22.

  Further, as shown in FIG. 3, the main wafer transfer mechanism 22 is equipped with a wafer transfer device 22a having a robot arm 22b on the inner side of a cylindrical support 22c so as to be movable up and down in the vertical direction (Z direction). The cylindrical support 22c is connected to a rotating shaft of a motor (not shown), and is rotated integrally with the wafer transfer device 22a around the rotating shaft by the rotational driving force of the motor, thereby transferring the wafer. The device 22a is rotatable in the θ direction.

  As shown in FIG. 2, in the first group G1, two spinner type processing units, for example, a resist coating processing unit (COT) and a development processing for performing a predetermined processing by placing a wafer W on a spin chuck in a cup CP. Units (DEV) are stacked in two stages from the bottom. Also in the second group G2, two spinner type processing units, for example, a resist coating processing unit (COT) and a development processing unit (DEV) are stacked in two stages in order from the bottom. In the resist coating processing unit (COT), the drainage of the resist solution is troublesome both in terms of mechanism and maintenance, and thus is preferably arranged in the lower stage. However, it can be arranged in the upper stage as required.

As shown in FIG. 3, in the third group G3, an oven-type processing unit that carries out a predetermined process by placing the wafer W on the mounting table, for example, a cooling unit (COL), an adhesion unit ( AD), alignment unit (ALIM), extension unit (EXT), pre-baking unit (PREBAKE), and post-baking unit (POBAKE). Even in the fourth group G4, an oven-type processing unit, for example, two cooling units (COL) in order from the bottom, an extension cooling unit (EXTCOL), an extension unit (EXT), and a post-exposure baking unit (PEB) And a post-baking unit (POBAKE).
Although not shown in FIG. 3, in the fifth group G5, as in the third group G3 and the fourth group G4, oven-type processing units are arranged in multiple stages, for example, a cooling unit (COL), a pre-processing unit, and the like. A baking unit (PREBAKE), a post-baking unit (POBAKE), and the like are stacked as necessary.

  In this way, cooling units (COL) and (EXTCOL) having a low processing temperature are arranged in the lower stage, a pre-baking unit (PREBAKE) that is a baking after resist coating, and a post-exposure baking that is a baking after exposure and before development ( By arranging the PEB) and the post-baking unit (POBAKE), which is a post-development baking, in the upper stage, the thermal mutual interference between the units can be reduced. However, a random multistage arrangement is also possible.

  The interface unit 12 has the same dimensions as the processing station 11 in the depth direction, but is provided in a small size in the width direction. A portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages on the front surface of the interface unit 12, a peripheral exposure device 23 is disposed on the rear surface, and a robot arm 24a is disposed on the center. A wafer transfer body 24 is provided. The wafer transfer body 24 moves in the X and Z directions to access both cassettes CR and BR and the peripheral exposure device 23. Further, the wafer transfer body 24 is configured to be rotatable in the θ direction, and can also access a fourth stage G4 multi-stage unit on the processing station 11 side and a wafer transfer table (not shown) on the adjacent exposure apparatus side. It is like that.

  Subsequently, the post-exposure baking unit (PEB) will be described in detail as an example of the location according to the features of the present invention. This post-exposure baking unit (PEB) is a heating unit that heat-treats the wafer W after exposure, and includes a heating plate and a cooling plate that performs rough heat removal of the heated wafer W.

  FIG. 4 is a cross-sectional view showing a detailed structure of a post-exposure baking unit (PEB) provided in the fourth group G4, for example. FIG. 5 is a longitudinal sectional view of a post-exposure baking unit (PEB). As shown in the figure, a stage 42 is provided inside the housing 41, and a ventilation chamber 44 communicating with a fan 43 is provided on the front side of the stage 42. The ventilation chamber 44 is configured to penetrate the fourth group G4 up and down and to be connected to a temperature control air supply unit (not shown).

  An opening 40 (40a, 40b) for carrying in / out the wafer W is formed on the front side of the left and right side walls 45 of the housing 41, with the stage 42 interposed therebetween, and a coolant channel on the back side. 46 and a vent 47 are formed penetrating vertically. The opening 40 (40a, 40b) can be opened and closed by a shutter 50. The arm 22b of the main wafer transfer mechanism 22 is provided via the opening 40a, and the arm 24a of the wafer transfer body 24 is provided via the opening 40b. The inside of the housing 41 can be accessed. The vent 47 is configured to communicate with the inside of the housing 41 via the fan 48.

  On the upper surface of the stage 42, a cooling arm 5 is provided on the front side and a heating plate 6 provided with a heater 61 on the rear side. The cooling arm 5 also functions as a substrate transfer means, and the main wafer transfer mechanism 22 or the wafer transfer body 24 that enters the housing 41 via the opening 40 (40a, 40b) and the heating plate 6 In addition to delivering the wafer W between the two, it has a role of roughly cooling the heated wafer W (performing rough heat removal) during transfer. Therefore, as shown in FIG. 5, the leg 51 is configured to be able to advance and retract in the Y direction along the guide means 49 (see FIG. 4) provided on the stage 42, thereby cooling as the first substrate holding means. The plate 52 can move from the side position of the opening 40 (40a, 40b) to the position above the heating plate 61. Further, on the back surface side of the cooling plate 52, for example, a cooling flow path (not shown) for flowing temperature adjustment water is provided.

  In addition, the wafer W transfer position between the main wafer transfer mechanism 22 or the wafer transfer body 24 and the cooling plate 52 on the stage 42 and the wafer W transfer position between the heating plate 6 and the cooling plate 52 are respectively shown. Are provided with three support pins 54 so as to protrude through the hole 53. A slit 55 is formed in the cooling plate 52 so that the wafer W can be lifted through the cooling plate 52 when the support pins 54 are raised.

  As shown in FIG. 4, a plurality (three in the figure) of electrostatic capacitance sensors S <b> 1 to S <b> 3 are provided on the upper surface of the cooling plate 52. These sensors are all formed in the same shape, and are provided at positions where the wafer W overlaps with all the sensors when the wafer W is correctly placed on the cooling plate 52. Strictly speaking, when the wafer W is correctly placed, it is a position where the capacitance ratios of all the sensors are equal (position where the areas covered by the wafer W are the same in each sensor), and the position is shifted. Are mounted at positions where the capacitance ratios of the sensors are different (positions where the areas covered by the wafer W are different by the respective sensors).

  FIG. 6 is a block diagram showing the configuration of the control system related to the capacitance sensors S1 to S3. Each of the sensors S1 to S3 has a configuration in which an electrode 62 is attached to a sensor main body 61 formed of, for example, Teflon (registered trademark) resin or the like. Each electrode 62 is connected to the capacitance detecting means 71 of the control unit 70 by a coaxial cable. Although not shown, for example, the potential of the frame of the module body is applied as the reference potential (ground potential or the like). That is, when the wafer W is placed on the cooling plate 52, the electrostatic capacitances of the electrostatic capacitance sensors S1 to S3 change, and therefore, a small electrostatic capacitance value (for example, a ground potential) (for example, a capacitance value) The electrostatic capacity detection means 71 detects the number fF to several tens fF).

  A control unit 70 shown in FIG. 6 is a unit that performs overall control of the coating and developing apparatus 1. That is, the control means 70 also controls the operation of the cooling arm 5 as a substrate transfer means having the cooling plate 52. Further, as shown in the figure, in the control means 70, the capacitance detection means 71 is connected to a CPU (Central Processing Unit) 72 that performs arithmetic processing. In other words, the capacitance value information in each of the sensors S1 to S3 detected by the capacitance detection means 71 is sent to the CPU 72.

Further, the control unit 70 is provided with a storage unit 73 such as a semiconductor memory or a hard disk, and a determination program 73a for determining the positional deviation state of the wafer W and the data detected by the capacitance detection unit 71 are stored therein. A reference table 73b in which table data for comparison is recorded is stored. FIG. 7 is an image diagram schematically showing the reference table 73b. As shown in FIG. 7, the reference table 73b is created in advance from data obtained by experiments or the like, and the capacitance ratio in each of the sensors S1 to S3 and the positional deviation amount of the wafer W in the X and Y directions. The relationship is recorded. That is, this table shows how much each sensor and the substrate (wafer W) are deviated from the reference coordinate position. For example, Row 1 of the reference table 73b indicates that there is no positional deviation, Row 2 indicates that the sensor S3 is displaced by a predetermined amount, and Row 3 indicates that the sensor S2 is displaced by a predetermined amount.
The CPU 72 controls the operation of the machine control means 74 that drives the arm 22b of the main wafer transfer mechanism 22 or the arm 24a (second substrate holding means) of the wafer transfer body 24.

Next, the operation of the control system based on the detection results of the capacitance sensors S1 to S3 will be described based on the flowchart of FIG.
First, during the operation of the coating and developing apparatus 1, the determination program 73a is activated to enter a program execution state (step ST1 in FIG. 8).
Then, in order to perform the heat treatment in the post-exposure baking unit (PEB), the arms 22b and 24a of the main wafer transfer mechanism 22 or the wafer transfer body 24 are provided in the housing 41 via the openings 40 (40a and 40b). The wafer W is entered while being held, and the wafer is placed on the support pins 54 in the raised state. Next, the support pins 54 on which the wafer W is placed are lowered, and the wafer W is placed on the cooling plate 52 (step ST2 in FIG. 8).

When the wafer W is placed on the cooling plate 52, the capacitance values in the sensors S1 to S3 are detected by the capacitance detecting means 71, and the detection result is supplied to the CPU 72 (step ST3 in FIG. 8). .
The CPU 72 compares the detection results of the sensors S1 to S3 with the reference table 73b of the storage means 73, and calculates the amount of positional deviation of the wafer W (step ST4 in FIG. 8).

Here, if the amount of positional deviation calculated in step ST4 is within the first allowable range, there is no influence on the delivery of the substrate and the process, and therefore normal processing is executed (step ST5 in FIG. 8).
On the other hand, if the amount of positional deviation exceeds the first allowable range (step ST5 in FIG. 8) and further exceeds the second allowable range (step ST6 in FIG. 8), the control means 70 The operation of the cooling arm 5 is completely stopped, the heating unit number is displayed on an operation display (not shown), and a warning sound is generated and / or a warning lamp (not shown) is turned on (step ST7 in FIG. 8). Thereby, the operator can know the abnormality of the wafer placement and can take immediate action.

On the other hand, if there is no deviation exceeding the second allowable range in step ST6, the control means 70 determines whether or not it can be corrected by the substrate transfer robot arm (substrate transfer means) in the system. Judgment is made according to the situation (step ST8 in FIG. 8). If it is determined that the correction cannot be performed by the substrate transfer robot arm in the system, the control means 70 completely stops the operation of the cooling arm 5, displays the heating unit number on the operation display, generates a warning sound and / or A warning lamp (not shown) is turned on (step ST7 in FIG. 8).
When it is determined in step ST8 that the correction can be made by the substrate transfer robot arm in the system, the control means 70 temporarily stops the substrate transfer operation by the cooling arm 5 and returns it to the delivery position with the transfer arm, and the arm 22b or arm The machine control means 74 is controlled so that the wafer W is mounted again by 24a (step ST9 in FIG. 8).

That is, in this case, when a predetermined displacement amount of the wafer W is detected, the support pins 54 are raised from below the cooling plate 52 and the wafer W is lifted again. Then, the wafer W is received again by the arm 22b or the arm 24a, the drop-type alignment provided in the transfer arm is performed, the center is aligned, the positional deviation amount is corrected, and the wafer W is again placed on the support pins 54. Is placed.
In this manner, the operations of steps ST5 and ST6 are performed until the wafer W is not displaced on the cooling plate 52.

As described above, according to the present embodiment, it is possible to detect the position shift state of the wafer W placed on the cooling plate 52 that is the first substrate holding means, and a predetermined position shift is detected. In this case, the position shift can be corrected by the arm 22b or the arm 24a which is the second substrate holding means, and the wafer W can be mounted again.
Therefore, since the problem that the wafer W is mounted on the heating plate 6 does not occur with a positional shift as in the conventional case, it is possible to suppress a decrease in yield.
Further, when the amount of positional deviation is large and is greater than or equal to a predetermined amount, the operation of the cooling arm 5 for moving the cooling plate 52 is stopped and a warning is issued, thereby avoiding the collision of the wafer with the module wall or the like. it can.

In the above embodiment, the sensors S1 to S3 are provided on the cooling plate 52 in the post-exposure baking unit (PEB). However, in the substrate processing apparatus according to the present invention, the configuration is provided. It is not limited to. That is, any means for transporting a substrate such as a wafer and a member such as a robot arm on which the substrate is placed can be suitably applied as a sensor installation member. For example, in the coating and developing apparatus 1 shown in FIGS. 1 to 3, in addition to the cooling plate 52 of the post-exposure baking unit (PEB), the main wafer transfer mechanism 22 or the arms 22b and 24a of the wafer transfer body 24 and the wafer A sensor may also be provided on the arm of the carrier 21.
Alternatively, in addition to the post-exposure baking unit (PEB), the configuration of the substrate processing apparatus of the present invention is widely applied to modules such as a resist coating unit (COT) and a development unit (DEV). Can do.

  In particular, in the post-exposure baking unit (PEB), the management of the thermal history given to the wafer is strictly required, and therefore, the mounting position of the wafer is regarded as important. Therefore, for example, as shown in FIG. 9, in addition to the sensors S1 to S3 shown in FIG. 4 described above, a plurality of sensors (S4 to S6) are further provided on the wafer outer edge at the correct position where the wafer W is to be placed. You may do it. If comprised in this way, if the mounting position of the wafer W will shift | deviate, the wafer W will overlap with any of sensors S4-S6, and the change of the electrostatic capacitance will be detected. As a result, the positional deviation amount of the wafer W can be detected with higher accuracy.

  In the above embodiment, a semiconductor wafer is taken as an example of a substrate to be processed. However, the substrate in the present invention is not limited to a semiconductor wafer, and an LCD substrate, a CD substrate, a glass substrate, a photomask, a printed substrate, and the like are also possible. It is.

  The present invention can be applied to a resist pattern forming apparatus that processes a substrate such as a semiconductor wafer, and can be suitably used in the semiconductor manufacturing industry, the electronic device manufacturing industry, and the like.

FIG. 1 is a plan view showing the overall configuration of a coating and developing apparatus to which a substrate processing apparatus and a substrate processing method of the present invention are applied. FIG. 2 is a front view of the coating and developing apparatus of FIG. FIG. 3 is a rear view of the coating and developing apparatus of FIG. FIG. 4 is a cross-sectional view showing a detailed structure of a post-exposure baking unit (PEB). FIG. 5 is a longitudinal sectional view of the post-exposure baking unit (PEB) of FIG. FIG. 6 is a block diagram illustrating a configuration of a control system according to the capacitance sensor. FIG. 7 is an image diagram schematically showing a reference table. FIG. 8 is a flowchart showing the operation of the control system based on the detection result of the capacitance sensor. FIG. 9 is a cross-sectional view showing another embodiment of the post-exposure baking unit (PEB).

Explanation of symbols

1 Coating and developing device 5 Cooling arm (substrate transport means)
22b Robot arm (second substrate holding means)
24a Robot arm (second substrate holding means)
52 Cooling plate (first substrate holding means)
70 Control means 71 Capacitance detection means 72 CPU
73 storage means 73a determination program 73b reference table 74 machine control means S1 to S6 capacitance sensor (sensor)
W Wafer (Substrate)

Claims (9)

A substrate processing apparatus comprising substrate transport means for transporting a substrate between or within a plurality of modules that perform single wafer processing on a substrate, and control means for controlling operation of the substrate transport means,
The substrate transport means is provided at a plurality of locations of the substrate holding means for holding the substrate and the substrate holding means so as to overlap with the substrate when the substrate is placed at a correct position. A plurality of sensors each of which detects a capacity;
The substrate processing apparatus is characterized in that the control means detects a misalignment state of the substrate based on detection results from the plurality of sensors. The control means includes storage means for storing a reference table that records a relationship between a capacitance ratio in the plurality of sensors and a positional deviation amount of the substrate,
2. The substrate processing according to claim 1, wherein information on detection results from the plurality of sensors is compared with information on a reference table stored in the storage unit to detect a positional deviation amount of the substrate. 3. apparatus.   When the control unit detects that the substrate placed on the substrate holding unit is displaced by a predetermined positional deviation amount, the control unit holds the substrate by another substrate transport unit and detects the positional deviation of the substrate. The substrate processing apparatus according to claim 2, wherein the substrate processing apparatus is corrected and placed on the substrate holding means.   When the control unit detects that the substrate placed on the substrate holding unit is displaced by a predetermined displacement amount, the control unit stops the operation of the substrate transfer unit and displays a unit number indicating the module position. The substrate processing apparatus according to claim 2, wherein a warning sound is generated and / or a warning lamp is turned on.   The substrate processing apparatus according to claim 1, wherein the sensor is formed of a resin material having electrodes attached thereto. A substrate processing method for controlling the transfer of a substrate between or within a plurality of modules that process a substrate in a single wafer mode,
Capacitance in a state where the substrate is mounted is detected from a plurality of sensors provided at a plurality of locations of the first substrate holding means for holding the substrate and detecting the capacitance with respect to each reference potential. And steps to
And a step of detecting a positional deviation state of the substrate based on detection results from the plurality of sensors. In the step of detecting the positional deviation state of the substrate,
A step of comparing a reference table that records a relationship between a capacitance ratio in the plurality of sensors and a positional deviation amount of the substrate, and information on detection results from the plurality of sensors;
The substrate processing method according to claim 6, wherein a step of detecting a positional deviation amount of the substrate is executed based on the comparison result. In the step of detecting the positional deviation state of the substrate, when it is detected that the substrate placed on the first substrate holding means is displaced by a predetermined positional deviation amount,
Holding the substrate on a second substrate holding means;
Causing the second substrate holding means to correct the predetermined displacement amount;
The substrate processing method according to claim 7, wherein the step of placing the substrate on the first substrate holding means is executed. In the step of detecting the positional deviation state of the substrate, when it is detected that the substrate placed on the first substrate holding means is displaced by a predetermined positional deviation amount,
Stopping the operation of the substrate transfer means;
8. The substrate processing method according to claim 7, wherein a step of displaying a unit number indicating a module position and generating a warning sound and / or turning on a warning lamp is executed.

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