JP2006344459A - Transfer method and transfer device - Google Patents

Transfer method and transfer device Download PDF

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JP2006344459A
JP2006344459A JP2005168018A JP2005168018A JP2006344459A JP 2006344459 A JP2006344459 A JP 2006344459A JP 2005168018 A JP2005168018 A JP 2005168018A JP 2005168018 A JP2005168018 A JP 2005168018A JP 2006344459 A JP2006344459 A JP 2006344459A
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transfer
substrate
transfer substrate
vacuum chamber
layer
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Keisuke Matsuo
圭介 松尾
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Sony Corp
ソニー株式会社
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PROBLEM TO BE SOLVED: To provide a transfer method and a transfer device wherein device configuration can be simplified and miniaturized.
SOLUTION: In the transfer method, first, a process overlapping the transfer substrate 20 wherein a luminous layer 23 is formed on one main surface side of a supporting substrate on a substrate 10 to be transferred is performed in such a state that the luminous layer 23 is directed to the substrate 10 to be transferred, then, a process making a vacuum atmosphere between the substrate 10 to be transferred and the transfer substrates 20 is performed in such a state that the transfer substrate 20 is overlapped on the substrate 10 to be transferred, and then, a process transferring the luminous layer 23 to the substrate 10 to be transferred is performed by irradiating the transfer substrate 20 with laser light from a laser light source 41 under the vacuum atmosphere. The transfer device 30 used for this transfer method is also disclosed.
COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、転写方法およびこれに用いる転写装置に関し、特に、有機電界発光素子(有機EL素子)の発光層の熱転写に用いる転写方法および転写装置に関するものである。 The present invention relates to a transfer apparatus using a transfer method and thereto, in particular, to a transfer method and the transfer apparatus used in the thermal transfer of the light-emitting layer of an organic electroluminescent device (organic EL device).

有機材料のエレクトロルミネッセンス(Electroluminescence)を利用した有機電界発光素子は、下部電極と上部電極との間に、正孔輸送層や発光層を積層させた有機層を設けてなり、低電圧直流駆動による高輝度発光が可能な発光素子として注目されている。 The organic electroluminescent element using electroluminescence of an organic material (Electroluminescence) is between the lower electrode and the upper electrode, it is provided an organic layer obtained by laminating a hole transporting layer and a light emitting layer, by a low voltage DC drive has attracted attention as a high-intensity light emission can be light-emitting element.

このような有機電界発光素子を用いたフルカラーの表示装置は、R(赤)、G(緑)、 Such full-color display device using an organic electroluminescent device, R (red), G (green),
B(青)の各色の有機電界発光素子を基板上に配列形成してなる。 Each color of the organic electroluminescent element B (blue) formed by arranging on a substrate. このような表示装置の製造においては、少なくとも各色に発光する有機発光材料からなる発光層を、発光素子毎にパターン形成する必要がある。 In the manufacture of such a display device, a light emitting layer made of an organic luminescent material that emits at least the colors, it is necessary to patterning for each light emitting element.

この発光層のパターン形成方法の一つとして、エネルギー源(熱源)を用いた転写法(すなわち熱転写法)が提案されている。 As one of pattern forming method of the light-emitting layer, energy source (heat source) transfer method using (ie thermal transfer method) it has been proposed. 熱転写法としては、転写用基板と被転写基板とを転写層を介して密着させた状態で転写する密着方式(例えば、特許文献1参照)と、転写用基板と被転写基板とを離間させた状態で転写する離間方式(例えば、特許文献2参照)とが報告されている。 The thermal transfer method, an adhesion method of transferring in a state in which a transfer substrate and the transfer substrate is brought into close contact through the transfer layer (e.g., see Patent Document 1), it was separated from the transfer substrate and the transfer substrate spaced manner to transfer state (e.g., see Patent Document 2) have been and are reported.

特開2004−200170号公報 JP 2004-200170 JP 特開2004−79540号公報 JP 2004-79540 JP

上記熱転写法に用いる転写装置は、一般的に、転写処理を行う真空チャンバと真空チャンバ内に導入された転写用基板に熱を付与するための輻射線を照射する照射源とを備えている。 The thermal transfer method transfer device for use in generally, and a radiation source for irradiating radiation to impart heat to the transfer substrate which is introduced into the vacuum chamber and the vacuum chamber for performing the transfer process. 一例を挙げて説明すると、上記真空チャンバ内には、被転写基板と転写用基板とをそれぞれ保持し、上下方向に可動させる可動式の保持部材が配置されている。 By way of example, within the vacuum chamber, and respectively hold the transfer substrate and the transfer substrate, the holding member movable to be movable in the vertical direction is arranged. 転写用基板の保持部材は、被転写基板用の保持部材よりも真空チャンバの上部側に、被転写基板と転写用基板とが対向配置するように配置される。 Holding members of the transfer substrate, the upper side of the vacuum chamber than the holding member for the transfer substrate, is arranged such that the substrate for transcription and the transfer substrate are opposed.

また、真空チャンバの上部には、転写用基板よりも一回り小さい開口部が設けられており、上記真空チャンバの上部の内壁側には、開口部の周縁に、気密シールが設けられている。 Further, the upper portion of the vacuum chamber, and a small opening is provided slightly larger than the transfer substrate, the inner wall of the upper portion of the vacuum chamber, the periphery of the opening, gas tight seal is provided. そして、上記転写用基板がこの気密シールを介して上記開口部を塞ぐことで、真空チャンバ内を気密状態にすることができる。 Then, the transfer substrate is by closing the opening through the hermetic seal, it can be a vacuum chamber in an airtight state.

一方、上記転写用基板に輻射線の照射源は、真空チャンバの上方に配置されており、転写用基板に熱を与えるように構成されている。 On the other hand, the radiation source of the radiation-to the transfer substrate is positioned above the vacuum chamber, and is configured to provide heat to the transfer substrate. 熱源としては、例えばレーザ光源があり、レーザ光源をXY方向に移動させることで、レーザ光をスポット照射しつつ走査するXYスキャナが配置されている。 The heat source, for example, there is a laser light source, by moving the laser light source in the XY direction, XY scanner for scanning the laser beam while spot irradiation are arranged.

上述したような転写装置を用いて、例えば密着方式の熱転写法により有機電界発光素子の発光層を形成する場合には、表示装置の基板上に下部電極(陽極)を介して正孔注入層、正孔輸送層を順次積層形成し、被転写基板を形成しておく。 Using a transfer apparatus as described above, for example in the case of forming a light emitting layer of the organic electroluminescent device by a thermal transfer method of the contact type, the hole injection layer via the lower electrode (anode) on the substrate of the display device, sequentially laminated forming the hole transport layer, previously formed the transferred substrate. 一方、別の基板上に、光熱変換層(光吸収層)を介して発光層を成膜することで、転写用基板を形成しておく。 On the other hand, on another substrate, by forming the light emitting layer through the light-to-heat conversion layer (light absorbing layer) in advance to form a transfer substrate. 次いで、真空チャンバ内に、被転写基板と転写用基板を導入し、被転写基板に設けられた正孔輸送層と転写用基板に設けられた発光層とが対向するように、各保持部材に装着する。 Then, the vacuum chamber, the substrate for transcription and the transfer substrate, as a light emitting layer provided on the transfer substrate and the hole transport layer provided on the transfer substrate are opposed to each holding member Installing.

次いで、真空チャンバ上部の開口部を外側からゲートバルブで塞ぎ、真空チャンバを閉塞した後、真空チャンバ内を減圧して真空雰囲気下とする。 Then, closing the gate valve openings of the vacuum chamber top from the outside, after closing the vacuum chamber, the vacuum atmosphere under reduced pressure of the vacuum chamber. 続いて、転写用基板が保持された保持部材を上方に移動して、真空チャンバ上部の開口部を転写用基板により内側から塞ぐとともに、被転写用基板が保持された保持部材を押し上げて、転写用基板と被転写基板とを重ね合わせる。 Subsequently, the holding member transfer substrate is held moves upward, along with blocked from the inside by a transfer substrate the opening portion of the vacuum chamber top, pushes up the holding member substrate to be transferred is held, transferred use substrate and overlapping the transferred substrate. その後、ゲートバルブを開けると、転写用基板を含む真空チャンバの上部は上方から大気圧で押されるため、転写用基板と被転写用基板とが密着する。 After that, when opened gate valve, the top of the vacuum chamber including a transfer substrate because it is pressed by the atmospheric pressure from above, and the transfer substrate and the transfer substrate are in close contact. この状態で、転写用基板にレーザ光をスポット照射しつつ走査させることにより、所定領域の正孔輸送層上に位置精度良好に発光層が熱転写される。 In this state, by scanning the laser beam while spot irradiated on the transfer substrate, the positional accuracy good luminescent layer on the hole transport layer in a predetermined region is thermally transferred.

一方、離間方式の熱転写法により転写する場合には、転写装置の基本的な構成は同じであり、真空チャンバに導入した転写用基板と被転写基板とを、ある程度の間隔を有した状態で対向配置する。 On the other hand, in the case of transferring by a thermal transfer method of the separation scheme, the basic structure of the transfer device are the same, opposes the the transfer substrate and the transfer substrate which is introduced into a vacuum chamber, having a certain interval Deploy. その後、真空チャンバ内を真空雰囲気下とし、レーザ光を転写用基板に照射して、転写用基板から被転写基板に転写層を転写する。 Thereafter, the vacuum chamber and a vacuum atmosphere, a laser beam is irradiated on the transfer substrate, and transferring the transfer layer from the transfer substrate to the transfer substrate.

しかしながら、上述したような密着方式の転写方法によれば、真空雰囲気下で転写用基板と被転写基板とを対向配置した後に、転写用基板と被転写基板とを重ね合わせるため、転写用基板と被転写基板とを移動させる可動式の保持部材を真空チャンバ内に配置する必要がある。 However, according to the transfer method of the contact type described above, after facing the transfer substrate and the transfer substrate in a vacuum atmosphere, for superimposing the transfer substrate and the transfer substrate, and the transfer substrate it is necessary to dispose the holding member movable for moving the transfer substrate in a vacuum chamber. また、各保持部材は、大気圧に対して上記基板を押し上げた状態で維持するため、荷重に耐えうる強度が必要である。 Each retaining member for maintaining a state where the atmospheric pressure pushing up the substrate, it is necessary strength to withstand the load. このため、真空チャンバの構成が複雑化および大型化してしまい、設備コストの増大が問題となる。 Therefore, the structure of the vacuum chamber will be complicated and large-sized, increase of equipment cost becomes a problem. さらに、転写用基板と被転写基板とを密着させるため、有機電界発光素子の発光層を形成する場合には、被転写基板の画素内への異物の混入や損傷も問題となっている。 Furthermore, in order to close contact with the transfer substrate and the transfer substrate, the case of forming a light emitting layer of the organic electroluminescent device has a foreign matter contamination and damage problems to the pixel of the transferred substrate.

また、離間方式の転写装置についても、真空チャンバ内に転写用基板と被転写基板とを離間した状態で維持するための可動式の保持部材やスペースが必要となるため、真空チャンバの構成が複雑化および大型化してしまう。 As for the transfer device of spaced manner, since the holding member and the space movable to maintain a state of being separated and the transfer substrate and the transfer substrate in a vacuum chamber is required, complicated structure of the vacuum chamber resulting in a reduction and increase in size.

このため、装置構成が簡略化されるとともに小型化が可能な転写装置および転写方法が望まれていた。 Therefore, device configuration transfer device and the transfer method which can be downsized has been desired together be simplified.

上述したような目的を達成するために、本発明の転写方法は、まず、支持基板の一主面側に転写層を形成してなる転写用基板を、転写層を被転写基板側に向けた状態で、被転写基板上に重ね合わせる工程を行う。 In order to achieve the object described above, the transfer method of the present invention, first, the transfer substrate obtained by forming a transfer layer on one main surface side of the supporting substrate, toward the transfer layer to the transferred substrate state, a step of superimposing on the transfer substrate. 次に、被転写基板上に転写用基板を重ね合わせた状態で、被転写基板と転写用基板との間を真空雰囲気にする工程を行う。 Then, with the superposed transfer substrate to a transfer substrate, a step of between the transfer substrate and the transfer substrate in a vacuum atmosphere. 次いで、真空雰囲気下で転写用基板に輻射線を照射することにより、転写層を被転写基板に転写する工程を行うことを特徴としている。 Then, by irradiating a radiation to the transfer substrate in a vacuum atmosphere, it is characterized by a step of transferring the transfer layer to the transfer substrate.

このような転写方法によれば、被転写基板上に転写用基板を重ね合わせる工程の後に、転写用基板と被転写基板との間を真空雰囲気にすることから、この転写方法に用いる真空チャンバ内には、転写用基板と被転写基板とを重ね合わせるための可動式の保持部材を配備しなくてもよい。 According to such a transfer method, after the step of superimposing the transfer substrate to be transferred onto the substrate, between the transfer substrate and the transfer substrate from applying a vacuum atmosphere, a vacuum chamber used in this transfer method the may not deploy the retention member movable for superimposing the transfer substrate and the transfer substrate.

また、本発明の転写装置は、転写用基板上に形成された転写層を被転写基板に転写する転写装置であって、被転写基板上に転写用基板を重ね合わせた状態で載置可能な載置部を有し、重ね合わせた状態の被転写基板と転写用基板とが収納される真空チャンバと、真空チャンバの上方に配置され、転写用基板に輻射線を照射する照射源とを備えている。 The transfer device of the present invention, a transfer layer formed on the transfer substrate a transfer apparatus for transferring to a transfer substrate, which can be placed in a superimposed state the transfer substrate to be transferred onto the substrate has a mounting portion, and the transfer substrate of the stacked state and the transfer substrate and the vacuum chamber is accommodated, it is arranged above the vacuum chamber, and a radiation source for irradiating radiation to the transfer substrate ing. そして、真空チャンバは、載置部上に重ね合わせた状態で載置された被転写基板と転写用基板とを、載置部と真空チャンバの上部とで挟持するように構成されており、載置部は、被転写基板と転写用基板とを挟持する位置で固定されている Then, the vacuum chamber, the the transfer target substrate placed in a state superimposed on the mounting portion and the transfer substrate, is configured so as to sandwich between the upper mounting portion and the vacuum chamber, placing portion is fixed at a position for sandwiching the substrate transferred the transfer substrate

このような転写装置によれば、真空チャンバは、転写用基板と被転写基板とを重ねた状態で収納するスペースがあればよいことから、従来の密着方式の転写装置と比較して、真空チャンバ内に転写用基板と被転写基板とを対向配置して重ねるための可動式の保持部材を配備する必要がない。 According to such a transfer device, the vacuum chamber, since the space may be any that accommodates a state of repeating the transfer substrate and the transfer substrate, as compared with the transfer device of the conventional adhesion method, a vacuum chamber there is no need to deploy the retention member movable to overlap with faces the transfer substrate and the transfer substrate within. また、従来の離間方式の転写装置と比較しても、転写用基板と被転写基板とを離間させた状態で維持する可動式の保持部材およびスペースを必要としない。 Also, in comparison with the transfer device prior spaced manner, it does not require the holding member and the space movable to maintain in a state of being spaced apart a transfer substrate and the transfer substrate. このため、真空チャンバの構成が簡略化されるとともに容積を小さくすることが可能となる。 Therefore, it is possible to configure the vacuum chamber to reduce the volume while being simplified.

以上説明したように、本発明における転写方法および転写装置によれば、従来の転写装置と比較して、真空チャンバの構成が簡略化されるとともに真空チャンバの容積を小さくすることが可能となる。 As described above, according to the transfer method and transfer apparatus according to the present invention, as compared with the conventional transfer device, the structure of the vacuum chamber it is possible to reduce the volume of the vacuum chamber while being simplified. したがって、設備コストの増大が防止できるとともに、転写装置の小型化が可能である。 Therefore, the equipment cost increase can be prevented, it is possible to miniaturize the transfer device.

以下、本発明の実施の形態を図面に基づいて詳細に説明する。 It will be described in detail with reference to embodiments of the present invention with reference to the drawings. 基板上に赤(R)、緑(G)、青(B)の各色の有機電界発光素子を配列してなるフルカラー表示の表示装置の製造方法に本発明の転写方法および転写装置を適用した実施の形態を説明する。 Red on the substrate (R), green (G), and carried out according to the transfer method and transfer apparatus of the present invention to the manufacturing method of the blue (B) colors organic electroluminescent device having an array with a full color display of the display device consisting of to explain the forms.

<被転写基板> <Transfer target substrate>
まず、被転写基板について説明する。 First described the transferred substrate. 図1(a)は、本実施形態で使用する被転写基板10を説明する要部拡大断面図であり、図1(b)は、要部拡大平面図である。 1 (a) is an enlarged fragmentary cross-sectional view illustrating a transfer substrate 10 used in this embodiment, and FIG. 1 (b) is an enlarged plan view. なお、図1(a)は図1(b)のX−X'線断面図とする。 Incidentally, FIG. 1 (a) and line X-X 'sectional view of FIG. 1 (b).

まず、図1(a)に示すように、例えばガラスからなる基板11上にTFT(thin film transistor)(図示省略)を配列形成した後、層間絶縁膜(図示省略)を介して、例えばクロム(Cr)からなる複数の下部電極(陽極)12を各画素毎にパターン形成する。 First, as shown in FIG. 1 (a), for example, after the substrate 11 made of glass TFT (thin film Transistor) (not shown) is arranged and formed, via an interlayer insulating film (not shown), such as chromium ( a plurality of lower electrodes (anode) 12 made of cr) is patterned for each pixel. 次いで、下部電極12を覆う状態で、例えばポリイミドを成膜した後、1度目のフォトリソグラフィプロセスを経て各画素を分離する平面視的に格子状の絶縁層13を形成する。 Then, in the state of covering the lower electrode 12, for example, after forming a polyimide, to form a plan view to lattice-like insulating layer 13 for separating the respective pixels via the first time of the photolithographic process. これにより、各画素Aを、300um/pixelのピッチPを有する短冊形状のパターンに形成する。 Thus, each pixel A, to form a pattern of strip shape having a pitch P of 300 um / pixel.

次いで、2度目のフォトリソグラフィプロセスを経ることで、上記絶縁層13の上部をパターン加工して略直方体状の突起部13aを形成する。 Then, by going through a second time photolithographic process to form a substantially rectangular parallelepiped protruding portion 13a is patterned an upper portion of the insulating layer 13. ここでは、この突起部13aを、画素Aが配列形成される画素領域の全域に渡って、格子状の絶縁層13の全ての交差部上に形成する(図1(b)参照)。 Here, the projections 13a, over the entire pixel region where the pixel A is arranged form is formed on all the intersections of the grid-shaped insulating layer 13 (see Figure 1 (b)). この際、絶縁層13の高さhは1μm、突起部13aの高さh'は2μmであることとする。 In this case, the height h of the insulating layer 13 is 1 [mu] m, the height h of the protrusion 13a 'are as it is 2 [mu] m.

ここで、この突起部13aは、後述する転写工程において、被転写基板10上に転写用基板を重ね合わせる際のスペーサとして機能する。 Here, the protrusion 13a is in the transfer step to be described later, serves as a spacer for laminating the transfer substrate onto the transfer substrate 10. これにより、上記基板を重ね合わせた状態でも、被転写基板10の絶縁層13と後述する転写用基板に設けられる発光層との間には突起部13a分の空間が生じ、この空間は基板の外部に連通している。 Accordingly, even when superimposed to said substrate, the space of the protrusion 13a fraction is generated between the light-emitting layer disposed on the transfer substrate to be described later and the insulating layer 13 of the transfer substrate 10, this space of the substrate and it communicates with the outside. このため、基板を重ね合わせた後に基板間の空間を真空雰囲気にすることが可能となる。 Therefore, it is possible to vacuum the space between the substrates after superposition of the substrate.

また、被転写基板10上に転写用基板を重ね合わせる際に突起部13aが介在することで、画素A内に、転写用基板の発光層が密着することが防止されるため、密着による画素A内の損傷や転写用基板からの異物の侵入が防止される。 Further, by interposing protrusions 13a is when superimposing the transfer substrate onto the transfer substrate 10, in the pixel A, since the light-emitting layer of the transfer substrate is prevented from being in close contact, the pixel A by adhesion damage and foreign matter from entering from the transfer substrate of the inner can be prevented. さらに、突起部13a部分のみが転写用基板の発光層と接触するため、転写用基板の発光層を再利用できる。 Furthermore, since only the protrusion 13a portion is in contact with the light-emitting layer of the transfer substrate can be reused a light emitting layer of the transfer substrate.

なお、本発明は上記突起部13aを形成しない場合でも適用可能である。 The present invention is applicable even without forming the protruding portion 13a. ただし、突起部13aを形成した方が、被転写基板10上に転写用基板を重ね合わせた状態で、基板間の空間を基板の外部の空間と連通させることができ、基板間を確実に真空雰囲気とすることができるため、好ましい。 However, those who formed the projections 13a is, in a state in which superposed transfer substrate onto the transfer substrate 10, it is possible to communicate the space and the communicating space of the substrate outside of the substrates, reliably vacuum between the substrates it is possible to atmosphere, preferred. さらに、基板間を密着させることによる転写用基板から被転写基板の画素内への異物の侵入や損傷が防止されるため、好ましい。 Furthermore, since the foreign matter from entering or damage to the pixel of the transfer substrate is prevented from transfer substrate by bringing into close contact between the substrates, preferably.

また、ここでは、格子状の絶縁層13における全ての交差部上に突起部13aを形成する例について説明したが、突起部13aは、転写用基板と被転写基板10とを重ね合わせた状態で、基板間を真空雰囲気にすることが可能であれば、全ての交差部上に設けられなくてもよく、交差部上でなくてもよい。 Further, here, an example is described of forming a projecting portion 13a on all intersections in the lattice-like insulating layer 13, the protrusion 13a is in a state of superposing the transfer substrate and the transfer substrate 10 , if it is possible to between the substrates in a vacuum atmosphere may not be provided on all of the intersection may not be on the intersection. さらに、突起部13aは画素領域内に設けられる必要はなく、例えば、画素領域よりも外側の絶縁層13上に、複数の突起部13aが額縁状に配置されてもよい。 Further, the protrusion 13a is not required to be provided in the pixel region, for example, on the outside of the insulating layer 13 than the pixel region, a plurality of projections 13a may be disposed in a frame shape. ただし、複数の突起部13aが画素領域に均等に配置される方が、被転写基板10と転写用基板とを重ね合わせた状態で、画素領域の全ての領域で被転写基板10と転写用基板との間隔が均等に維持される。 However, those who plurality of projections 13a are evenly arranged in the pixel region, in a state of superposing the substrate transferred the transfer substrate 10, the substrate for transfer and the transfer substrate 10 in all regions of the pixel region distance between is maintained evenly. このため、画素領域の全ての領域において、基板間を確実に真空雰囲気とすることができるため、好ましい。 Thus, in all regions of the pixel region, it is possible to reliably vacuum atmosphere between the substrates, preferably.

次いで、例えば蒸着法により、下部電極12上に、RGB全ての画素に共通して、m−MTDATA〔4,4,4 -tris(3-methylphenylphenylamino)triphenylamine〕からなる正孔注入層14を25nmの膜厚で形成する。 Then, for example, by vapor deposition, on the lower electrode 12, common to all the pixels RGB, m-MTDATA [4,4,4 -tris (3-methylphenylphenylamino) triphenylamine] to become a hole injection layer 14 of 25nm It is formed with a film thickness. 続いて、例えば蒸着法により、上記正孔注入層14上に、RGB全ての画素に共通して、α−NPD[4,4-bis(N-1-naphthyl-N-phenylamino)biphenyl]からなる正孔輸送層15を30nmの膜厚で形成する。 By then, such as vapor deposition, on the hole injection layer 14, made of common to all the pixels RGB, α-NPD [4,4-bis (N-1-naphthyl-N-phenylamino) biphenyl] forming a hole transport layer 15 with a thickness of 30 nm.

尚、ここでの図示は省略するが、複数の画素Aを配列形成してなる画素領域よりも外側の基板11の隅部には、後述するレーザ照射部との位置合わせを行う際の基準となる基準マーク(図示省略)を形成する。 Here, in the illustrated in the drawings, the corners of the plurality of pixels A sequence formed outer than the pixel region formed by the substrate 11, and the reference for aligning the laser irradiation unit to be described later forming a reference mark (not shown) made. 以上のようにして、被転写基板10を形成する。 As described above, to form a substrate 10 to be transferred.

<転写用基板> <Transfer substrate>
次に、転写用基板について説明する。 It will now be described transfer substrate. 図2は、本実施形態で使用する転写用基板20を説明する模式図で、図2(a)は断面図、図2(b)は平面図である。 Figure 2 is a schematic view illustrating the transfer substrate 20 used in this embodiment, FIG. 2 (a) is a cross-sectional view, FIG. 2 (b) is a plan view.

ここでは、一主面側が被転写基板10と略同等の大きさを有するガラス製の支持基板21上に、スパッタリング法により、例えばクロム(Cr)からなる光熱変換層(光吸収層)22を200nmの膜厚で形成する。 Here, 200 nm on a glass support substrate 21 the main surface side having a magnitude substantially equal and the transferred substrate 10 by sputtering, for example, light-to-heat conversion layer made of chromium (Cr) (light absorbing layer) 22 the film thickness of the formation. 光熱変換層22は、後述する転写工程において、転写用基板20に向けてレーザ光を照射する際、レーザ光を熱に変換する。 Photothermal conversion layer 22, in the transfer step to be described later, when irradiating a laser beam toward the transfer substrate 20, and converts the laser light into heat.

次に、光熱変換層22上に、発光層23を例えば25nmの膜厚で形成する。 Next, on the light-heat conversion layer 22 to form a light-emitting layer 23 for example a thickness of 25 nm. 本実施の形態においては、上述した被転写基板10上にマトリクス状に配置された複数の表示画素R,G,Bを発光してカラー表示を行うために、R用、G用、B用の各発光層23には、発光機能を備える有機化合物として異なる材料を用いる。 In the present embodiment, a plurality of display pixels R arranged in matrix on the transfer substrate 10 described above, G, in order to perform the light emission to color display of B, the R, G, for B each light-emitting layer 23, using a different material as the organic compound having a light emitting function. つまり、転写用基板20は、1枚の被転写基板10に対し、少なくとも3枚以上用いることとなる。 In other words, the transfer substrate 20, for one sheet of the transfer substrate 10, so that the use of at least three or more.

赤色発光層は、例えば、赤色発光材料,正孔輸送性材料,電子輸送性材料および両電荷輸送性材料のうち少なくとも1種を含んでいる。 Red light-emitting layer includes, for example, a red light-emitting material, hole transporting material, at least one of an electron transporting material, and a both charge transport material. 赤色発光材料は、蛍光性のものでも燐光性のものでもよい。 Red light-emitting material may be of even phosphorescent those fluorescent. 本実施の形態では、赤色発光層は、厚みが30nm程度であり、ジ(2−ナフチル)アントラセン(ADN)に2,6−ビス[(4'−メトキシジフェニルアミノ)スチリル]−1,5−ジシアノナフタレン(BSN)を30重量%混合したものにより構成されている。 In this embodiment, the red light emitting layer, has a thickness of about 30 nm, di (2-naphthyl) anthracene (ADN) 2,6-bis [(4'-methoxy diphenylamino) styryl] -1,5 It is constituted by those dicyano naphthalene (BSN) were mixed 30% by weight.

また、緑色発光層は、例えば、緑色発光材料,正孔輸送性材料,電子輸送性材料および両電荷輸送性材料のうち少なくとも1種を含んでいる。 The green light emitting layer, for example, green light-emitting material, hole transporting material and at least one of the electron transporting material, and a both charge transport material. 緑色発光材料は、蛍光性のものでも燐光性のものでもよい。 Green light-emitting material may be of even phosphorescent those fluorescent. 本実施の形態では、緑色発光層は、本事例では、厚みが30nm程度であり、ADNにクマリン6を5重量%混合したものにより構成されている。 In this embodiment, the green light-emitting layer, in this case, has a thickness of about 30 nm, and is made of a mixture of coumarin 6 5 wt% to ADN.

さらに、青色発光層は、例えば、青色発光材料,正孔輸送性材料,電子輸送性材料および両電荷輸送性材料のうち少なくとも1種を含んでいる。 Further, blue light-emitting layer includes, for example, a blue light emitting material, hole transporting material, at least one of an electron transporting material, and a both charge transport material. 青色発光材料は、蛍光性のものでも燐光性のものでもよい。 Blue emitting material may be of even phosphorescent those fluorescent. 本実施の形態では、青色発光層は、例えば、厚みが30nm程度であり、ADNに4,4'−ビス[2−{4−(N,N−ジフェニルアミノ)フェニル}ビニル]ビフェニル(DPAVBi)を2.5重量%混合したものにより構成されている。 In this embodiment, the blue light-emitting layer, for example, has a thickness of about 30 nm, the ADN 4,4'-bis [2- {4- (N, N- diphenylamino) phenyl} vinyl] biphenyl (DPAVBi) It is constituted by a mixture of 2.5 wt%.

ここで、光熱変換層22および発光層23の成膜範囲は、図2(b)に示すように、被転写基板10と重ねたときに、基板11(前記図1(a)参照)上の隅部に設けられた基準マークを覆わないようなエリアになるようにする。 Here, the film formation range of the light-to-heat conversion layer 22 and the light emitting layer 23, as shown in FIG. 2 (b), when superimposed on the transfer substrate 10, the substrate 11 on (FIG 1 (a) see) set to be the area that does not cover the reference mark provided on the corners. 以上のようにして、転写用基板20を形成する。 As described above, to form a transfer substrate 20. なお、ここでは、支持基板21としてガラス基板を用いることとしたが、本発明はこれに限定されず、支持基板21がフィルム状であってもよい。 Here, it is assumed that a glass substrate is used as the supporting substrate 21, the present invention is not limited to this, the supporting substrate 21 may be a film.

<転写装置> <Transfer device>
次に、転写装置について、図3を用いて説明する。 Next, the transfer device will be described with reference to FIG. この図に示すように、この転写装置30は、被転写基板10上に転写用基板20を重ね合わせた状態で収納可能な真空チャンバ31と、真空チャンバ31に収納された転写用基板20に向けて、輻射線を照射するレーザ照射部40とを備えている。 As shown in this figure, the transfer device 30 includes a vacuum chamber 31 capable of storing a state where superposed transfer substrate 20 onto the transfer substrate 10, toward the transfer substrate 20 housed in the vacuum chamber 31 Te, and a laser irradiation unit 40 that irradiates radiation.

真空チャンバ31は、例えばステンレス等からなる上部が開口された容器状の基体32と、この基体32の上部に配置される例えばステンレス等からなる枠状の蓋体33とを備えている。 Vacuum chamber 31, an upper made of, for example, stainless steel or the like includes a container-like base 32 having an opening, and a frame-shaped lid 33 made of the example stainless disposed above the substrate 32 and the like.

基体32は、被転写基板10上に転写用基板20を重ねた状態で載置可能な載置部34を有している。 Substrate 32 has a can be placed mounting portion 34 in a laminated state transfer substrate 20 on the substrate 10 to be transferred. 載置部34は基体32の底部と一体で構成されている。 Mounting portion 34 is constituted integrally with the bottom of the base 32. そして、容器状の基体32は、上記載置部34上に重ねた状態で載置された被転写基板10と転写用基板20とを収納可能な高さを有して構成されている。 The container-like body 32 is configured with a and the transfer substrate 10 which is placed in a state overlaid on the loading portion 34 and the transfer substrate 20 height capable of accommodating.

また、基体32の側壁32bには、真空チャンバ31内を真空雰囲気下とするための真空ポンプ(図示省略)が接続された排気口35と、真空チャンバ31内の真空雰囲気を解放するためのリーク口36が設けられている。 Further, the side wall 32b of the base 32, an exhaust port 35 vacuum pump (not shown) is connected to the inside of the vacuum chamber 31 and the vacuum atmosphere, leakage for releasing vacuum atmosphere in the vacuum chamber 31 mouth 36 is provided. 排気口35にはバルブ35aが設けられているとともに、リーク口36にはバルブ36aが設けられている。 The valve 35a is provided in the exhaust port 35, the valve 36a is provided in the leak port 36.

ここで、上記側壁32bは、前期載置部34上に重ね合わせた状態で載置される被転写基板10と転写用基板20の周囲に空間Bを介在させて設けられることが好ましい。 Here, the side wall 32b is preferably provided with a space B is interposed around the transfer substrate 20 and the transfer substrate 10 to be placed in a state superimposed on the previous year placement portion 34. これにより、後述する転写工程において、被転写基板10に設けられた突起部13aにより形成される被転写基板10と転写用基板20との間の空間をこの空間Bと連通させることができる。 Thus, in the transfer step to be described later, it is possible to communicate the space B and the communicating the space between the transfer target substrate 10 and the transfer substrate 20 formed by the projections 13a provided on the transfer substrate 10. そして、真空チャンバ31内を真空雰囲気にすることで空間Bを介して、基板間の空間を確実に真空雰囲気にすることができる。 Then, the vacuum chamber 31 through the space B by the vacuum atmosphere, it is possible to reliably vacuum space between the substrates. ただし、この空間Bは小さい方が、真空チャンバ31の容積を小さくできるため、好ましい。 However, the space B is preferably small, because it can reduce the volume of the vacuum chamber 31, preferably.

一方、枠状の蓋体33は、上記基体32を覆うとともに、真空チャンバ31の上部を構成しており、蓋体33の枠を構成する開口部33aは転写用基板20よりも一回り小さく設けられている。 On the other hand, frame-shaped lid 33 covers the said substrate 32, constitutes the upper portion of the vacuum chamber 31, openings 33a which constitutes the frame of the lid 33 is provided slightly smaller than the transfer substrate 20 It is. 蓋体33における基体32と対向する面(内壁面)33bには、外縁部と開口部33aの周縁に、気密シール37が配置されている。 The substrate 32 opposite to the face (inner wall surface) 33b of the lid 33, the peripheral edge of the outer portion and the opening portion 33a, hermetic seal 37 is disposed.

上記基体32と蓋体33とで構成される真空チャンバ31は、基体32と蓋体33とが、例えば蓋体33の一辺で連結されており、その反対側を持ち上げることで開放され、蓋体33を下ろして閉じた状態でロックされるように構成されている。 Vacuum chamber 31 composed of the above substrate 32 and the cover 33 includes a base body 32 and the cover 33, for example, are connected by one side of the lid 33 is opened by lifting the opposite side, the lid is configured to be locked in the closed state Lower the 33. なお、ここでは蓋体33の一辺で基体32と蓋体33とが連結されることとしたが、蓋体33は基体32上をスライドする状態で設けられていてもよく、基体32と連結していなくてもよい。 Here, it is assumed that the the base 32 and the lid 33 at one side of the lid 33 are connected, the lid 33 may be provided in a state of sliding on the base 32, connected to the base 32 it may not be.

ここで、本発明の特徴的な構成として、真空チャンバ31は、上記載置部34上に重ね合わせた状態で載置された被転写基板10と転写用基板20とを、上記載置部34と上記蓋体33とで挟持するように構成されている。 Here, as a characteristic configuration of the present invention, the vacuum chamber 31, the the transfer target substrate 10 which is placed in a state superimposed on the loading portion 34 and the transfer substrate 20, the loading portion 34 and it is configured so as to sandwich between the lid 33 and. すなわち、上記載置部34上に被転写基板10を介して載置された転写用基板20上と基体32上に気密シール37を介して蓋体33を載置することで、転写用基板20により上記開口部33aが塞がれ、転写用基板20と蓋体33と基体32とで、気密空間が形成される。 That is, by placing the lid 33 via a gas-tight seal 37 onto the transfer substrate 20 and on the substrate 32 placed over the transferred substrate 10 on the loading portion 34, a transfer substrate 20 the opening 33a is closed, with a transfer substrate 20 and the lid 33 and the base 32, the airtight space is formed. そして、この状態で真空チャンバ31内を真空雰囲気にすることで、蓋体33が真空チャンバ31の内側に引かれ、転写用基板と蓋体33とが上方から大気圧で押される。 Then, by a vacuum atmosphere in the vacuum chamber 31 in this state, the cover 33 is pulled to the inside of the vacuum chamber 31, pushed by the atmospheric pressure and the transfer substrate and the lid 33 from above. これにより、上記載置部34上に重ね合わせた状態で載置された被転写基板10と転写用基板20とが載置部34と蓋体33とで挟持された状態となる。 Thus, in the state of being sandwiched between the transfer substrate 10 which is placed in a state superimposed on the loading portion 34 and transfer substrate 20 Togano part 34 and the lid 33.

また、上記載置部34は被転写基板10と転写用基板20とを挟持する位置で固定されている。 Further, the loading portion 34 is fixed at a position for sandwiching the transfer substrate 20 and the substrate 10 to be transferred. ここでは、載置部34が基体32の底部と一体で構成されることで固定されることとする。 Here, mounting portion 34 is to be fixed by being configured integrally with the bottom of the base 32. これにより、従来の転写装置と比較して真空チャンバ31内に被転写基板10を保持するための可動式の保持部材を必要せず、また、大気圧による荷重にも十分に耐えうる。 Thus, without requiring a holding member movable for holding a substrate 10 to be transferred into the vacuum chamber 31 as compared with the conventional transfer device, also withstand sufficiently to load by the atmospheric pressure. これにより、真空チャンバ31内の構成が簡略化される。 Thus, the configuration of the vacuum chamber 31 is simplified.

また、載置部34の載置面34aは、基体32の底面32aと同一平面に設けられており、載置面34aと蓋体33の内壁面33aとの距離Dが被転写基板10と転写用基板20とを重ねた状態の厚みD'と略同等となるように設けられることとする。 Moreover, the placement surface 34a of the mounting portion 34 is provided on the bottom surface 32a flush with the base 32, the distance D is the transferred substrate 10 and the inner wall surface 33a of the mounting surface 34a and the lid 33 transfer to use the substrate 20 and the thickness D 'of a laminated state and be provided so as to be substantially equal. これにより、真空チャンバ31の容積を規定する高さ(距離D)が、被転写基板10上に転写用基板20を重ねた状態で配置するのに最低限必要な高さでよいことから、従来の転写装置と比較して真空チャンバ31の容積を小さくすることが可能となるため、好ましい。 Thus, the height that defines the volume of the vacuum chamber 31 (distance D) is, since it is a minimum required height to place in a state of overlapping the transfer substrate 20 onto the transfer substrate 10, a conventional it becomes possible to reduce the volume of the vacuum chamber 31 as compared with the transfer device, preferably. ただし、この場合には、気密シール37は真空チャンバ31内を真空雰囲気とすることでつぶれるため、無視できる程度の厚みであることとする。 However, in this case, hermetic seal 37 for collapsing by the vacuum atmosphere in the vacuum chamber 31, and it is thick enough to be ignored.

また、上記真空チャンバ31の上方には、輻射線の照射源としてレーザ照射部40が配置されている。 Above the vacuum chamber 31, the laser irradiation unit 40 is arranged as a radiation source radiation. レーザ照射部40は、レーザ光源41と、レーザ光源41をスポット照射させつつXY方向に移動させるXYスキャナ42とを備えている。 The laser irradiation unit 40 includes a laser light source 41, and an XY scanner 42 is moved in the XY directions of the laser light source 41 while spot irradiation. また、ここでの図示は省略したが、レーザ光源41には、アライメントカメラが隣接して設けられており、被転写基板10に設けられた基準マークを取り込み、レーザ光源41と被転写基板10との位置合わせを行うことが可能である。 Also, here illustrated is omitted, the laser light source 41, alignment camera is provided adjacent captures a reference mark provided on the transfer substrate 10, a laser light source 41 and the substrate 10 to be transferred it is possible to perform the alignment.

なお、ここでは、輻射線の照射源としてレーザ光源41を用いることとしたが、この照射源はレーザ光源42に限定されず、ヒートバー、サーマルヘッドなどを用いることも可能である。 Here, it is assumed that a laser light source 41 as a radiation source radiation, the radiation source is not limited to the laser light source 42, a heat bar, it is possible to use a thermal head. この場合には、転写用基板20に直接熱を与えられるため、転写用基板20に光熱変換層22を形成しなくてもよい。 In this case, because given the heat directly to the transfer substrate 20, it is not necessary to form the photothermal conversion layer 22 to transfer substrate 20.

上述した転写装置30は、例えば各色の発光層23を転写するための3台の転写装置30が不活性ガスで置換された外部チャンバ50の内部に配置されていることとする。 Transfer device 30 described above, for example, the transfer device 30 of the three for transferring the light-emitting layer 23 of each color are arranged in the interior of the outer chamber 50 which is replaced with an inert gas. これにより、転写後の被転写基板11を他の色の発光層23を転写する転写装置に移動する際、大気中の水や酸素に発光層23を含む有機層を晒すことなく、有機層の損傷が防止されるため、好ましい。 Thus, when moving the transfer substrate 11 after the transfer to a transfer device for transferring the other colors of the light-emitting layer 23, without exposing the organic layer including a light emitting layer 23 to water and oxygen in the air, the organic layer since damage is prevented, preferably.

なお、ここでは、基板の載置面が基体32の底面32aと同一平面に設けられる例について説明したが、基体32の底面32aに基板を載置するステージ部が段差を有して設けられていてもよい。 Here, an example is described in which the mounting surface of the substrate is provided on the bottom surface 32a flush with the base 32, a stage unit for placing a substrate on the bottom surface 32a of the base 32 is provided with a stepped it may be. ただし、基板の載置面が基体32の底面32aと同一平面に設けられる方が、真空チャンバ31の容積を小さくできるため、好ましい。 However, those who mounting surface of the substrate is provided on the bottom surface 32a flush with the base 32, it is possible to reduce the volume of the vacuum chamber 31, preferably.

また、ここでは、蓋体33が枠体である例について説明するが、蓋体33は枠体ではなく、板状部材であってもよい。 Further, here, the lid 33 will be described an example a frame body, the lid 33 is not a frame, it may be a plate-like member. この場合には、後述する転写工程において、蓋体33を介して転写用基板20にレーザ光が照射されるため、蓋体33は、例えばガラス等の透明性を有する板状部材で構成されることとする。 In this case, consists in the transfer step to be described later, since the laser beam to transfer substrate 20 through the lid 33 is irradiated, the lid 33 is, for example, a plate-shaped member having transparency such as glass it is assumed that. ただし、蓋体33は枠体であるほうが、転写用基板20にレーザ光が直接照射できることから、透過率がよく、蓋体33の屈折率の影響も受けないため、好ましい。 However, since the lid 33 is more a frame body, since the laser light can be irradiated directly on the transfer substrate 20, transmittance well, even independent of the refractive index of the cover 33, preferably. なお、蓋体33が板状部材で構成される場合には、真空雰囲気下で蓋体33を下側に撓ませた状態で、載置部34上に載置された被転写基板10と転写用基板20を挟持することで、転写用基板20の全域が被転写基板10側に均等に押される。 Incidentally, when configured by the plate-like member lid 33 is in a state of bending the lid 33 on the lower side in the vacuum atmosphere, and the transferred substrate 10 placed on the placement portion 34 transfer by sandwiching the use substrate 20 evenly pushed entire area of ​​the transfer substrate 20 on the transfer substrate 10 side. このため、真空雰囲気下で蓋体33が転写用基板20の上面全域に当接する範囲で基体32の側壁32bが若干転写用基板20の上面よりも高くなるように構成されることが好ましい。 Therefore, it is preferable that the lid 33 in a vacuum atmosphere is constructed as a side wall 32b of the substrate 32 in a range in contact with the entire upper surface of the transfer substrate 20 is higher than the upper surface of slightly transfer substrate 20.

さらに、本実施形態では、真空チャンバ31が、容器状の基体32と蓋体33とで構成される例について説明したが、本発明はこれに限定されることなく、真空チャンバ31が、載置部34と真空チャンバ31の上部とで、重ね合わせた状態の被転写基板10と転写用基板20とを挟持するように構成されており、載置部34がこれら基板を挟持する位置で固定されていればよい。 Further, in this embodiment, the vacuum chamber 31, an example is described composed of a container-like base 32 and the cover 33, but the present invention is not limited thereto, the vacuum chamber 31, placed in the parts 34 and the top of the vacuum chamber 31, is configured to sandwich the and the transfer substrate 10 that is overlapped with the transfer substrate 20 is fixed at a position where mounting portion 34 is held between these substrates it is sufficient that. 例えば、板状部材からなる基体と、この基体を覆う状態で閉塞するような箱状の蓋体とを備えた真空チャンバであってもよく、基体と蓋体とが一体で構成されており、側壁側から基板を導入可能な真空チャンバであってもよい。 For example, a base made of a plate-like member may be a box-shaped vacuum chamber with a lid, such as to close in the state of covering the substrate, the substrate and the lid and is configured integrally, it may be a vacuum chamber capable of introducing the substrate from the side wall. さらには、上述したような外部チャンバ50の底面部に、被転写基板10と転写用基板20とを重ねた状態で収納可能な複数の凹部が形成されており、この凹部を閉塞する板状部材からなる蓋体を備えた真空チャンバであってもよい。 Further, the bottom portion of the outer chamber 50 as described above, are formed a plurality of recesses capable of housing in a laminated state and the transfer substrate 20 and the transfer substrate 10, a plate-like member closing the recess it may be a vacuum chamber with a lid made of.

<転写工程> <Transfer step>
次いで、上述した転写装置30を用いて、転写用基板20から被転写基板10に、例えば赤色の発光層23(転写層)を転写する転写方法について説明する。 Then, by using the transfer device 30 described above, the substrate 10 to be transferred from the transfer substrate 20, for example, a red light-emitting layer 23 (the transfer layer) transfer method for transferring a will be described. まず、外部チャンバ50内を不活性ガス雰囲気にした状態で、被転写基板10を、真空チャンバ31を構成する基体32の載置部34上に載置する。 First, in a state where the outer chamber 50 to the inert gas atmosphere, the substrate 10 to be transferred and placed on mounting portion 34 of the base 32 of the vacuum chamber 31. この際、図4(a)に示すように、下部電極12の形成面側を上方に向けた状態で載置する。 At this time, as shown in FIG. 4 (a), it is placed in a state with its formation surface side of the lower electrode 12 upward. ここで、下部電極12上には、ここでの図示は省略したが、図1(a)を用いて説明した正孔注入層14、正孔輸送層15が順次積層されているため、被転写面は正孔輸送層15となる。 Here, on the lower electrode 12 has been omitted illustrated here, since the hole injection layer 14 described with reference to FIG. 1 (a), the hole transport layer 15 are sequentially stacked, the transfer face is the hole transport layer 15.

次に、転写用基板20に設けられた発光層23の形成面側を被転写基板10側に向けた状態で、上記被転写基板10上に上記転写用基板20を重ね合わせる。 Next, the forming surface side of the light-emitting layer 23 provided on the transfer substrate 20 in a state directed to the transfer substrate 10 side, superimposing the transfer substrate 20 on the substrate 10 to be transferred. これにより、被転写基板10には複数の突起部13aが設けられていることから、突起部13aにより、転写用基板20が支持される。 Thus, since the plurality of projections 13a are provided on the transfer substrate 10, the protrusions 13a, the transfer substrate 20 is supported. また、この突起部13aにより、被転写基板10と転写用基板20との間に外部に連通する空間Cが形成される。 Also, by the protrusion 13a, a space C communicating with the outside between the transfer substrate 20 and the transfer substrate 10 is formed. この際、図4(b)の上面図に示すように、被転写基板10の隅部に設けられた基準マークSは、転写用基板20を透過して確認されることとする。 At this time, as shown in the top view of FIG. 4 (b), the reference marks S provided in the corner portions of the transfer substrate 10, and be verified through the transfer substrate 20.

なお、ここでは、基体32内で被転写基板10と転写用基板20とを重ね合わせることとしたが、図3に示す不活性ガス雰囲気下の外部チャンバ50内で被転写基板10上に転写用基板20を重ね合わせた後、重ね合わせた状態で上記載置部34上に被転写基板10と転写用基板20とを載置してもよい。 Here, it is assumed that superimposing a transfer substrate 10 in the substrate 32 and transfer substrate 20, a transfer onto the transfer substrate 10 in the outer chamber 50 of the inert gas atmosphere as shown in FIG. 3 after superposition of the substrate 20 may be placed on the substrate 10 to be transferred onto the loading portion 34 and the transfer substrate 20 in a superimposed state.

次いで、図3に示すように、枠状の蓋体33を気密シール37を介して基体32上および転写用基板20上に配置してロックする。 Then, as shown in FIG. 3, locks and place the frame-shaped cover body 33 via a gas-tight seal 37 on the base 32 and on the transfer substrate 20. これにより、転写用基板20により、蓋体33の開口部33aが塞がれるため、真空チャンバ31は閉塞される。 Thus, the transfer substrate 20, since the opening portion 33a of the lid 33 is closed, the vacuum chamber 31 is closed.

その後、排気口35に設けられたバルブ35aを開き、真空チャンバ31内を減圧する。 Then, opening the valve 35a provided in the exhaust port 35 to reduce the pressure in the vacuum chamber 31. この際、基体32上および転写用基板20上に気密シール37を介して載置された蓋体33は真空チャンバ31の内側に引かれ、真空チャンバ31内が真空雰囲気下となる。 At this time, the lid 33 placed through a gas-tight seal 37 on the base 32 and on the transfer substrate 20 is pulled to the inside of the vacuum chamber 31, the vacuum chamber 31 becomes a vacuum atmosphere. また、上方から大気圧により蓋体33と転写用基板20とが被転写基板11側に押され、被転写基板10上の転写用基板20は、突起部13aにより支持された状態で、載置部34と蓋体33とに挟持される。 Further, the lid 33 by the atmospheric pressure from above the transfer substrate 20 is pressed on the transfer substrate 11 side, the transfer substrate 20 on the transfer substrate 10, while being supported by the protrusions 13a, placed It is sandwiched between the part 34 and the lid 33.

この状態で、真空チャンバ31内の空間Bが真空雰囲気となり、空間Bと連通する被処理基板10と転写用基板20との間の空間C(前記図4(a)参照)が真空雰囲気となる。 In this state, the space B of the vacuum chamber 31 becomes a vacuum atmosphere, the space C between the target substrate 10 which communicates with the space B and the transfer substrate 20 (see FIG. 4 (a)) becomes a vacuum atmosphere . この際、転写用基板20に設けられた発光層23は、突起部13aとのみ接触するため、発光層23への損傷は抑制されることから、この転写用基板20を2度目以降の転写に用いることができる。 At this time, the light emitting layer 23 provided on the transfer substrate 20, for contacting only the protruding portion 13a, because the damage to the light emitting layer 23 is suppressed, the transfer substrate 20 to the second and subsequent transfer it can be used. さらに、突起部13aが介在することで、転写用基板20と被転写基板との密着が防止されるため、転写用基板20からの異物が被転写基板10の画素A(前記図4(a)参照)内に混入することなく、転写用基板20による被転写基板10の画素A内の損傷も抑制される。 Furthermore, since the protruding portion 13a is interposed, since the contact is prevented between the transfer substrate 20 and the transfer substrate, foreign matter from the transfer substrate 20 is pixel A of the transfer substrate 10 (FIG. 4 (a) without mixing in the reference), it is also suppressed damage the pixel a of the substrate 10 to be transferred by the transfer substrate 20.

次いで、被転写基板10の基準マークS(前記図4(a)参照)を、レーザ照射部40のアライメントカメラに取り込むことで、被転写基板10とレーザ光源41との位置合わせを行った後、レーザ光源41から、例えば800nmの赤外レーザ光をスポット照射して、転写用基板20の光熱変換層22に吸収させる。 Then, the reference mark S of the transfer substrate 10 (FIG. 4 (a) refer), by incorporating the alignment camera of the laser irradiation section 40, after the alignment of the transfer target substrate 10 and the laser light source 41, from the laser light source 41, for example an infrared laser beam of 800nm ​​and a spot irradiated, is absorbed in the light-to-heat conversion layer 22 of the transfer substrate 20. そして、この熱を利用して、発光層23を被処理基板10上に成膜された正孔輸送層15上に選択的に転写する。 Then, by utilizing this heat, selectively transferring the light-emitting layer 23 on the hole transport layer 15 which is formed on the substrate 10 to be treated. この際、この赤外レーザ光の刈幅は100μmとする。 In this case, swath of the infrared laser beam is set to 100 [mu] m.

なお、ここでは、スポット照射させたレーザ光をXY方向に走査して選択的に照射する転写工程について説明したが、レーザ照射部40と転写用基板20との間にレーザ光を照射する部分のみが開口された遮光マスク(図示省略)を配置して、全面にレーザ光を照射してもよい。 Here, although described transfer step of selectively irradiating by scanning a laser beam obtained by spot irradiation in the XY direction, only the portion irradiated with the laser beam between the laser irradiation unit 40 and the transfer substrate 20 There place the apertured shielding mask (not shown), may be irradiated with laser light on the entire surface.

転写完了後、排気口35のバルブ35aを閉じ、リーク口36のバルブ36aを開くことで、真空雰囲気下の真空チャンバ31を、常圧に覆圧する。 After transfer completion, close the valve 35a of the exhaust port 35 and opening the valve 36a of the leak port 36, the vacuum chamber 31 under a vacuum atmosphere, pressure covered to normal pressure. その後、蓋体33を開け、転写用基板20を被転写基板10から離間して、不活性ガス雰囲気下の外部チャンバ50内を移動させて、B,G用の転写装置30に被処理基板10を移動する。 Then, opening the lid 33, the transfer substrate 20 separated from the transfer substrate 10, by moving the inside outer chamber 50 under an inert gas atmosphere, B, the target substrate 10 to the transfer device 30 for G to move. その後、BおよびGに対応した転写用基板20を用いて、青色発光層および緑色発光層についても同様の工程で転写を行う。 Then, by using the transfer substrate 20 corresponding to the B and G, it performs transfer in the same process applies to the blue light-emitting layer and the green luminescent layer.

この後の製造工程は、通常の有機電界発光素子の製造方法と同様の工程で行う。 Manufacturing process after this is done in the manufacturing method similar to the steps of the conventional organic electroluminescent device. すなわち、表示エリアの全面にベタ付けにする状態で、発光層23上に電子輸送層を成膜する。 That is, in the state that the solid with the entire display area, forming the electron transporting layer on the light-emitting layer 23. 電子輸送層は、厚みが20nm程度であり、8−ヒドロキシキノリンアルミニウム(Alq3 )により構成する。 Electron transport layer had a thickness of about 20 nm, it constitutes a 8-hydroxyquinoline aluminum (Alq3).

続いて、電子注入層として、フッ化リチウム(LiF)を真空蒸着法により約0.3nm(蒸着速度〜0.01nm/sec)の膜厚で形成し、次いで、上部電極として、マグネシウム銀(MgAg)からなる陰極を真空蒸着法により10nmの膜厚で形成する。 Subsequently, as an electron injection layer was formed with a film thickness of about 0.3nm by vacuum deposition of lithium fluoride (LiF) (deposition rate 0.01 nm / sec), then as the upper electrode, magnesium-silver (MgAg the cathode made of) is formed in a thickness of 10nm by vacuum deposition. この陰極は、共通の上部共通電極として形成される。 This cathode is formed as a common upper common electrode.

この際、下地に対して影響を及ぼすことのない程度に、成膜粒子のエネルギーが小さい成膜方法、例えば蒸着法やCVD(chemical vapor deposition)法によって上部共通電極の形成を行うこととする。 At this time, to the extent without effect on the underlying, and carrying out the formation of the upper common electrode by a small film forming method energy deposition particles, such as vapor deposition or CVD (chemical vapor deposition) method. また、望ましくは、有機層を大気に暴露することなく、有機層の形成と同一の装置内において連続して上部共通電極の形成を行うことで、大気中の水分による有機層の劣化を防止する。 Further, preferably without exposing the organic layer to the atmosphere, by performing the formation of the upper common electrode continuously in the same apparatus as the formation of the organic layer, to prevent deterioration of the organic layer due to moisture in the atmosphere .

この場合、上部共通電極は、有機層に対して電子を効率的に注入できるように、仕事関数の小さい材料で透明に形成され、特に蒸着法のような成膜粒子のエネルギーが小さい成膜方法によって形成できる金属薄膜として形成することが好ましい。 In this case, the upper common electrode, so that it can efficiently inject electrons to the organic layer, is transparent formed by a material having a low work function, in particular small energy deposition film formation method of particles such as vapor deposition it is preferably formed as a metal thin film can be formed by.

以上の後、上述した上部共通電極上に、絶縁性または導電性の保護膜を設ける。 After the above, on the upper common electrode described above, an insulating or conductive protective film. この際、下地に対して影響を及ぼすことのない程度に、成膜粒子のエネルギーが小さい成膜方法で、例えば蒸着法や化学的気相成長(Chemical Vapor Deposition(CVD)法によって保護膜の形成を行うこととする。また、保護膜の形成は、上部共通電極を大気に暴露することなく、上部共通電極の形成と同一の装置内において連続して行うこととする。これによって、大気中の水分や酸素による有機層の劣化を防止する。 At this time, to the extent without effect on the underlying, formation of the protective film smaller energy deposition film formation method of the particles, for example by vapor deposition or chemical vapor deposition (Chemical Vapor Deposition (CVD) method and be performed. in addition, formation of the protective film, without exposing the upper common electrode to the atmosphere, and be continuously performed in the same apparatus as the formation of the upper common electrode. Thus, in the air to prevent deterioration of the organic layer due to moisture or oxygen.

また、この保護膜は、有機層への水分の到達防止を目的とし、透過水性,吸水性の低い材料を用いて十分な膜厚で形成されることとする。 Further, the protective film, reaching prevention of moisture into the organic layer for the purpose, and that is formed with a sufficient film thickness with transparent aqueous, low water absorption material. さらに、表示装置が上面発光型である場合には、この保護膜は有機層で発生した光を透過する材料からなり、例えば80%程度の透過率が確保されていることとする。 Further, when the display device is a top emission type, the protective layer is made of a material that transmits the light generated in the organic layer, for example, 80% of transmittance and that it is secured.

そして、特にここでは、保護膜を絶縁性材料によって形成する、つまり、金属薄膜からなる単層構造の上部共通電極上に、絶縁性の保護膜を直接形成する。 And in particular here, the protective film is formed of an insulating material, i.e., on the upper common electrode of the single-layer structure made of a metal thin film is directly formed an insulating protective film.

このような保護膜として、無機アモルファス性の絶縁性材料、例えばアモルファスシリコン(α−Si),アモルファス炭化シリコン(α−SiC),アモルファス窒化シリコン(α−Si1-x Nx )さらにはアモルファスカーボン(α−C)等を好適に用いることができる。 As such a protective film, an inorganic amorphous insulating material, for example, amorphous silicon (α-Si), amorphous silicon carbide (α-SiC), amorphous silicon nitride (α-Si1-x Nx) more amorphous carbon (alpha -C) or the like can be suitably used. このような無機アモルファス性の絶縁性材料は、グレインを構成しないため透水性が低く、良好な保護膜となる。 Such an inorganic amorphous insulating material has low water permeability because it does not form grains, a good protective film.

例えば、アモルファス窒化シリコンからなる保護膜を形成する場合には、CVD法によって2〜3μmの膜厚に形成されることとする。 For example, in the case of forming a protective film made of amorphous silicon nitride and be formed to a thickness of 2~3μm by CVD. ただし、この際、有機層の劣化による輝度の低下を防止するため成膜温度を常温に設定し、さらに、保護膜の剥がれを防止するために膜のストレスを最小になる条件で成膜することが望ましい。 However, this time, the deposition temperature in order to prevent a decrease in brightness due to deterioration of the organic layer was set to room temperature, further be formed under the conditions comprising a film stress to a minimum in order to prevent the peeling of the protective film It is desirable

なお、保護膜を導電性材料で構成する場合には、ITO(Indium Tin Oxide)やIZO(Indium Zinc Oxide)のような透明導電性材料が用いられる。 When forming the protective film with a conductive material, a transparent conductive material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide) is used. 以上のようにして保護膜を形成した後、必要に応じて保護膜上に紫外線硬化樹脂を介してガラス基板を固着し、表示装置を完成させる。 After the protective film is formed as described above, via the ultraviolet curing resin to fix the glass substrate on the protective film if necessary, to complete the display.

以上説明したような転写方法および転写装置によれば、被転写基板10上に転写用基板20を重ね合わせる工程の後に、転写用基板20と被転写基板10との間を真空雰囲気にすることから、この転写方法に用いる転写装置30の真空チャンバ31は、被転写基板10上に転写用基板20を重ねた状態で配置するスペースがあればよい。 According to the transfer method and transfer apparatus as described above, after the step of superimposing the transfer substrate 20 onto the transfer substrate 10, between the transfer substrate 20 and the substrate 10 to be transferred from it to the vacuum atmosphere , the vacuum chamber 31 of the transfer device 30 used in the transfer method, it is sufficient space for arrangement in a laminated state transfer substrate 20 on the substrate 10 to be transferred. これにより、従来の密着方式の転写装置と比較して、真空チャンバ31内に被転写基板10と転写用基板20とを対向配置して重ねるための可動式の保持部材を配備する必要がない。 Thus, as compared with the transfer device of the conventional contact type, there is no need to deploy the retention member movable to overlap opposite arranged between the transfer substrate 10 and the transfer substrate 20 in the vacuum chamber 31. また、従来の離間方式の転写装置と比較して、被転写基板10と転写用基板20とを離間させた状態で維持する保持部材およびスペースを必要としない。 Further, as compared with the transfer device prior spaced manner, it does not require the holding member and the space is maintained in a state of being spaced apart a transfer substrate 20 and the substrate 10 to be transferred. このため、真空チャンバ31の構成が簡略化されるとともに真空チャンバ31の容積を小さくすることが可能となる。 Therefore, it is possible to reduce the volume of the vacuum chamber 31 with the configuration of the vacuum chamber 31 is simplified. したがって、設備コストの増大が防止できるとともに、転写装置の小型化が可能である。 Therefore, the equipment cost increase can be prevented, it is possible to miniaturize the transfer device.

また、真空チャンバ31の構成が簡略化されるとともに容積を小さくすることできるため、転写用基板20とレーザ光源41との距離を比較的短くすることができる。 Further, since it possible configuration of the vacuum chamber 31 to reduce the volume while being simplified, it is possible to relatively shorten the distance between the transfer substrate 20 and the laser light source 41. 例えば、半導体レーザなど、対物集光レンズが必要で焦点距離の制約がある光源を使用することも可能となり、光源の選択性が広がる。 For example, such as a semiconductor laser, it becomes possible to use a light source that is limited focal length requires objective condenser lens, the selectivity of the light source is increased. また、その距離の短縮により光の照射位置と被転写基板とのアライメント精度も向上する。 Also improved alignment accuracy between the irradiation position and the transfer substrate of the light by shortening the distance. さらに、常圧環境下に被転写基板10と転写用基板20とを重ね合わせるための可動部材を配置することができるため、アクセス性が向上し、メンテナンス性も向上させることができる。 Furthermore, it is possible to arrange the movable member for superimposing the transfer target substrate 10 and the transfer substrate 20 to the normal pressure, improved accessibility, it is possible to improve maintainability.

また、被転写基板10に突起部13aが設けられていることから、被転写基板10上に転写用基板20を重ね合わせた状態で、基板間の空間を確実に真空雰囲気にすることができる。 Further, since the projections 13a are provided on the transfer substrate 10, in a superimposed state the transfer substrate 20 onto the transfer substrate 10, it is possible to reliably vacuum space between the substrates. したがって、転写用基板10から発光層23を位置精度よく転写することができる。 Therefore, it is possible to transfer high positional accuracy emitting layer 23 from the transfer substrate 10.

なお、上記実施形態では、有機電界発光素子を構成する有機層のうち発光層23のみを熱転写法により形成する例について説明したが、発光層23に限らず、正孔注入層14、正孔輸送層15、電子輸送層等、他の有機層であっても、本発明は適用可能である。 In the above embodiment, an example has been described is formed by thermal transfer method only luminescent layer 23 of the organic layer constituting the organic electroluminescent device is not limited to the light emitting layer 23, the hole injection layer 14, hole transport layer 15, an electron transport layer, etc., may be another organic layer, the present invention is applicable.

また、本実施形態では、有機電界発光素子を用いた上面発光型の表示装置の製造方法の例を用いて説明したが、本発明はこれに限定されず、下面発光型(透過型)の表示装置であってもよい。 Further, in the present embodiment has been described using an example of a method for manufacturing a top emission type display apparatus using an organic electroluminescence device, the present invention is not limited to this, the display of bottom emission type (transmission type) it may be a device. この場合には、下部電極12をITO等透明性の高い導電材料を用いて形成し、上部電極を反射性の高い導電材料で形成する。 In this case, the lower electrode 12 is formed using a highly conductive material such as ITO transparent, to form the upper electrode with high reflectivity conductive material.

また、上記実施形態では、下部電極12を陽極、上部電極を陰極とする例について説明したが、下部電極12を陰極、上部電極を陽極とした表示装置であっても、本発明は適用可能である。 In the above embodiment, the anode and the lower electrode 12, an example has been described in which the upper electrode and the cathode, be a display apparatus cathode, the upper electrode as an anode and the lower electrode 12, the present invention is applicable is there. この場合には、下部電極12上に電子注入層、電子輸送層が積層された状態で発光層23が形成される。 In this case, an electron injection layer on the lower electrode 12, the light emitting layer 23 is formed in a state in which an electron transport layer are stacked.

なお、上述した転写装置30を用い、本実施形態で用いた被転写基板10または転写用基板20よりも薄い基板を用いて、熱転写を行う場合には、基体32の底面32aの高さを調整する載置板(図示省略)を配置し、載置板上に被処理基板10を載置してもよい。 Incidentally, using a transfer device 30 described above, by using a thinner substrate than the substrate 10 to be transferred or transfer substrate 20 used in this embodiment, when performing the thermal transfer, adjust the height of the bottom surface 32a of the base 32 to the mounting plate (not shown) placed, it may be placed a substrate to be processed 10 on the mounting plate. この場合には、載置板の上面が載置面となる。 In this case, the upper surface of the mounting plate is the mounting surface. また、上記転写装置30を用いて本実施形態で用いた被転写基板10または転写用基板20よりも厚い基板を用いて熱転写を行う場合には、基体32と同一の開口形状を有する枠状の構成部材を基体32上に別途配置して、基体32の高さを調整することも可能である。 Further, when the thermal transfer using a thicker substrate than the substrate 10 to be transferred or transfer substrate 20 used in this embodiment with reference to the transfer device 30, a frame-shaped having the same opening shape as the substrate 32 the components separately disposed on the substrate 32, it is also possible to adjust the height of the substrate 32.

本発明の転写方法に係る実施の形態に用いる被転写基板の要部拡大断面図(a)および要部拡大平面図(b)である。 Used in the embodiment according to the transfer method of the present invention is an enlarged sectional view of the transfer substrate (a) and enlarged plan view (b). 本発明の転写方法に係る実施の形態に用いる転写用基板の模式図であり、断面図(a)および平面図(b)である。 It is a schematic view of a transfer substrate used in the embodiment according to the transfer method of the present invention, a sectional view (a) and a plan view (b). 本発明の転写装置に係る実施の形態を説明するための断面構成図である。 It is a sectional view for explaining an embodiment according to the transfer device of the present invention. 本発明の転写方法に係る実施の形態を説明するための断面図(a)および上面図(b)である。 It is a cross-sectional view for explaining an embodiment according to the transfer method of the present invention (a) and top view (b).

符号の説明 DESCRIPTION OF SYMBOLS

10…被転写基板、12…下部電極、13a…突起部、20…転写用基板、21…支持基板、23…発光層、30…転写装置、31…真空チャンバ、32…基体、32a…底面、33…蓋体、33a…開口部、33b…内壁面、34…載置部、34a…載置面、41…レーザ光源 10 ... transfer target substrate, 12 ... lower electrode, 13a ... protrusion, 20 ... transfer substrate, 21 ... supporting substrate, 23 ... light-emitting layer, 30 ... transfer device, 31 ... vacuum chamber, 32 ... substrate, 32a ... bottom face, 33 ... lid, 33a ... opening, 33b ... inner wall surface, 34 ... mounting portion, 34a ... placement surface, 41 ... laser light source

Claims (8)

  1. 支持基板の一主面側に転写層を形成してなる転写用基板を、前記転写層を被転写基板側に向けた状態で、当該被転写基板上に重ね合わせる工程と、 The transfer substrate obtained by forming a transfer layer on one main surface side of the supporting substrate, in a state directed the transfer layer to the transfer substrate side, a step of superimposing on the transfer target substrate,
    前記被転写基板上に前記転写用基板を重ね合わせた状態で、当該被転写基板と当該転写用基板との間を真空雰囲気にする工程と、 The superposed state of the transfer substrate to be transferred onto a substrate, a step of between the transfer substrate and the transfer substrate in a vacuum atmosphere,
    真空雰囲気下で前記転写用基板に輻射線を照射することにより、前記転写層を前記被転写基板に転写する工程とを有する ことを特徴とする転写方法。 By irradiating radiation to the transfer substrate in a vacuum atmosphere, transfer method characterized by a step of transferring the transfer layer to the transfer substrate.
  2. 前記被転写基板には、当該被転写基板上に前記転写用基板を重ね合わせた状態で、前記転写用基板を支持するとともに、当該転写用基板と前記被転写基板との間に外部に連通する空間を形成する突起部が設けられている ことを特徴とする請求項1記載の転写方法。 Wherein the transfer substrate is superposed state of the transfer substrate to the transfer target substrate, while supporting the transfer substrate, communicating with the outside between the transfer substrate and the transfer substrate transfer method according to claim 1, wherein a protruding portion for forming a space is provided.
  3. 前記被転写基板は、有機電界発光素子に用いる基板の一主面側に電極を設けてなり、 The transfer substrate is made by providing electrodes on one main surface side of the substrate used in the organic electroluminescent element,
    前記転写層は、少なくとも発光層を含む有機層である ことを特徴とする請求項1記載の転写方法。 The transfer layer transfer method according to claim 1, wherein the organic layer comprising at least a light emitting layer.
  4. 転写用基板上に形成された転写層を被転写基板に転写する転写装置であって、 The transfer layer formed on the transfer substrate a transfer apparatus for transferring to a transfer substrate,
    前記被転写基板上に前記転写用基板を重ね合わせた状態で載置可能な載置部を有し、重ね合わせた状態の前記被転写基板と前記転写用基板とを収納する真空チャンバと、 A vacuum chamber having a can be placed mounting portion, for accommodating said transfer substrate of the stacked state and the transfer substrate in a superimposed state the transfer substrate to the transfer target substrate,
    前記真空チャンバの上方に配置され、前記転写用基板に輻射線を照射する照射源とを備え、 Wherein disposed above the vacuum chamber, and a radiation source for irradiating radiation to the transfer substrate,
    前記真空チャンバは、前記載置部上に重ね合わせた状態で載置された前記被転写基板と前記転写用基板とを、前記載置部と前記真空チャンバの上部とで挟持するように構成されており、 Said vacuum chamber, said placed in a state superimposed on the mounting section and the transfer substrate and the transfer substrate, is configured so as to sandwich between the mounting section and the top of the vacuum chamber and,
    前記載置部は、前記被転写基板と前記転写用基板とを挟持する位置で固定されている ことを特徴とする転写装置。 The placement section is a transfer device, characterized in that said is fixed at a position for sandwiching the substrate the transfer and the transfer substrate.
  5. 前記載置部は、前記真空チャンバの底面と同一平面に載置面を有しており、前記底面と前記真空チャンバの上部の内壁面との距離は、前記被転写基板と前記転写用基板とを重ね合わせた状態の厚みと略同等となるように設けられている ことを特徴とする請求項4記載の転写装置。 The mounting section, the vacuum has a mounting surface on the bottom surface flush with the chamber, the distance between the upper inner wall surface of said bottom surface and said vacuum chamber, said substrate said transfer and the transfer substrate the transfer device according to claim 4, characterized in that is provided so as to be substantially equal to the thickness of the superposed state.
  6. 前記真空チャンバは、前記載置部を有する基体と、当該基体を覆うとともに前記真空チャンバの上部を構成する蓋体とを備えている ことを特徴とする請求項4記載の転写装置。 Said vacuum chamber, a substrate having the mounting section, the transfer apparatus according to claim 4, characterized in that a lid member constituting the upper portion of the vacuum chamber covering the substrate.
  7. 前記蓋体が前記転写用基板より一回り小さい開口部を有する枠体であり、前記載置部上に前記被転写基板を介して載置された前記転写用基板により前記枠体を構成する開口部が塞がれることで、前記転写用基板と前記蓋体と前記基体とで気密空間が形成される ことを特徴とする請求項6記載の転写装置。 Wherein a frame body cover body has a small opening slightly from the transfer substrate, the opening constituting the frame body by the transfer substrate the placed over the transferred substrate on the mounting table by parts is blocked, the transfer apparatus according to claim 6, wherein the airtight space is formed between the the transfer substrate and the lid member the substrate.
  8. 前記照射源がレーザ光源である ことを特徴とする請求項4記載の転写装置。 The transfer device of claim 4, wherein said radiation source is a laser light source.
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