JP2006323370A5

JP2006323370A5 -

Info

Publication number: JP2006323370A5
Application number: JP2006109261A
Authority: JP
Filing date: 2006-04-12
Publication date: 2009-05-07
Anticipated expiration: 2026-04-12

Claims

Having first to third transistors, a memory circuit, a light emitting element, and first to fifth wirings;
A gate of the first transistor is electrically connected to the first wiring;
One of a source and a drain of the first transistor is electrically connected to the second wiring;
The other of the source and the drain of the first transistor is electrically connected to one of the source and the drain of the second transistor;
A gate of the second transistor is electrically connected to the third wiring;
The other of the source and the drain of the second transistor is electrically connected to the gate of the third transistor, the first input terminal of the memory circuit, and the output terminal of the memory circuit,
One of a source and a drain of the third transistor is electrically connected to the fourth wiring;
The other of the source and the drain of the third transistor is electrically connected to the light emitting element,
The semiconductor device is characterized in that a second input terminal of the memory circuit is electrically connected to the fifth wiring.

Having first to third transistors, a memory circuit, a light emitting element, and first to fifth wirings;
A gate of the first transistor is electrically connected to the first wiring;
One of a source and a drain of the first transistor is electrically connected to the second wiring;
The other of the source and the drain of the first transistor is electrically connected to one of the source and the drain of the second transistor;
A gate of the second transistor is electrically connected to the third wiring;
The other of the source and the drain of the second transistor is electrically connected to the gate of the third transistor, the first input terminal of the memory circuit, and the output terminal of the memory circuit,
One of a source and a drain of the third transistor is electrically connected to the fourth wiring;
The other of the source and the drain of the third transistor is electrically connected to the light emitting element,
A second input terminal of the memory circuit is electrically connected to the fifth wiring;
The memory circuit has a function of holding a first potential input from the second wiring to the first input terminal, and a second input from the fifth wiring to the second input terminal. A function of holding a potential,
The semiconductor device is characterized in that light emission of the light-emitting element is controlled by applying the first potential or the second potential to the gate of the third transistor.

Having first to sixth transistors, an inverter, a light emitting element, and first to fifth wirings;
A gate of the first transistor is electrically connected to the first wiring;
One of a source and a drain of the first transistor is electrically connected to the second wiring;
The other of the source and the drain of the first transistor is electrically connected to one of the source and the drain of the second transistor;
A gate of the second transistor is electrically connected to the third wiring;
The other of the source and drain of the second transistor is the gate of the third transistor, the input terminal of the inverter, one of the source or drain of the fourth transistor, and the source or drain of the fifth transistor. Electrically connected to one side,
One of a source and a drain of the third transistor is electrically connected to the fourth wiring;
The other of the source and the drain of the third transistor is electrically connected to the light emitting element,
An output terminal of the inverter is electrically connected to a gate of the fourth transistor and a gate of the fifth transistor;
The other of the source and the drain of the fourth transistor is electrically connected to the fifth wiring;
The other of the source and the drain of the fifth transistor is electrically connected to one of the source and the drain of the sixth transistor;
A gate of the sixth transistor is electrically connected to the third wiring;
The other of the source and the drain of the sixth transistor is electrically connected to the fourth wiring.

In claim 3,
The first transistor, the second transistor, and the fourth transistor are transistors having the same polarity,
The semiconductor device, wherein the third transistor, the fifth transistor, and the sixth transistor are transistors having opposite polarities to the polarities.