JP2006323026A - Method for manufacturing electrophoresis display device and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electrophoresis display device having high flexibility and free from damages in a thin film semiconductor circuit layer by an end part of a transparent electrode substrate. <P>SOLUTION: The method includes: a first step of forming a thin film semiconductor circuit layer (12) on a flexible substrate (11) to obtain a semiconductor circuit board (10); and a second step of laminating a common electrode substrate (30) having a transparent electrode layer (32) formed on one surface thereof with the semiconductor circuit board (10) to allow the transparent electrode layer (32) to face the thin film semiconductor circuit layer (12) through an electrophoresis display layer (20) containing charged particles in a dispersion medium. On laminating in the second step, no direct force is added to a region (19) where lines (17) disposed in an outer periphery of the semiconductor circuit board (10) and to be connected to an external connection terminal (15) overlap the rim part of the common electrode substrate (30). <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an electrophoretic display device manufacturing method and an electronic apparatus.

  For example, an electrophoretic display device is configured by sealing an electrophoretic display dispersion between two transparent electrode substrates in which an ITO film (indium oxide film doped with tin) is formed on a glass surface. The electrophoretic display dispersion liquid includes electrophoretic particles of one or more kinds of colors and an electrophoretic dispersion medium. Information is displayed by moving the electrophoretic particles through the electrophoretic dispersion medium by applying a voltage between the two electrodes and changing the position of the electrophoretic particles.

In consideration of application of the electrophoretic display device to various electronic devices such as electronic paper, an electrophoretic display device formed on a flexible substrate having high flexibility as a whole is desirable. In order to obtain such a flexible electrophoretic display device, it is necessary to produce an electrophoretic display device using a material having excellent flexibility, for example, a plastic material as a thin film substrate.
Such a method of manufacturing an electrophoretic display device is disclosed in, for example, Patent Document 1 and Patent Document 2.

Patent Document 1 describes laminating a transparent electrode substrate on a thin film semiconductor circuit substrate via an electrophoretic dispersion layer on a thin film semiconductor circuit substrate formed on a flexible substrate.
Patent Document 2 describes a technique of laminating a transparent electrode substrate in which a microcapsule in which an electrophoretic dispersion medium and electrophoretic particles are encapsulated is applied to a counter electrode.

JP 2002-169190 A JP 2004-271747 A

  However, when laminating a transparent electrode substrate on a thin film semiconductor circuit substrate, if the area of the transparent electrode substrate is smaller than that of the thin film semiconductor circuit substrate, the end of the transparent electrode substrate is a device circuit of a thin film semiconductor circuit layer (for example, a thin film transistor (TFT) circuit) may be touched, and the semiconductor element is damaged or a crack is generated in the device circuit, resulting in a decrease in reliability. This is particularly remarkable in the wiring portion connected to the external connection terminal on the thin film semiconductor circuit board.

  Therefore, an object of the present invention is to provide a method for manufacturing an electrophoretic display device which is rich in flexibility and does not damage a thin film semiconductor circuit by an end portion of a transparent substrate.

  In order to achieve the above object, an electrophoretic display device manufacturing method of the present invention includes a first step of forming a thin film semiconductor circuit layer on a flexible substrate to obtain a semiconductor circuit substrate, and forming a transparent electrode layer on one surface. A second step of bonding the transparent substrate and the semiconductor circuit substrate so that the transparent electrode layer and the thin film semiconductor circuit layer face each other through an electrophoretic display layer containing charged particles in a dispersion medium, When bonding is performed in the second step, a force is not directly applied to a region where the wiring provided on the outer peripheral portion of the semiconductor circuit substrate and connected to the external connection terminal overlaps with the peripheral portion of the transparent substrate. .

  Thereby, the manufacturing method of the electrophoretic display device which was rich in the flexibility which does not damage a thin film semiconductor circuit layer by the edge part of a transparent substrate can be obtained.

  In the second step, bonding is performed by pressurizing with a press device, and the press device has a press plate from which a portion corresponding to the region has been removed. Can be realized.

The electronic apparatus of the present invention includes the electrophoretic display device having the above-described configuration as a display unit.
With such a configuration, the reliability of the display portion can be improved. Here, the electronic devices include mobile phones, electronic paper, PDAs, electronic notebooks, electronic bulletin boards, advertising announcement displays, and other various types.

Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a diagram schematically showing a plane of the electrophoretic display device 1. FIG. 2 is an enlarged view of a cross section in the AA ′ direction in FIG. 1. Corresponding parts in both figures are given the same reference numerals.
As shown in each drawing, the electrophoretic display device 1 is roughly constituted by a flexible semiconductor circuit substrate 10, an electrophoretic display layer 20, and a flexible common electrode substrate 30.

  In the semiconductor circuit substrate 10, a thin film semiconductor circuit layer 12 is formed on a flexible substrate 11 as an insulating base substrate for forming an electric circuit. The flexible substrate 11 is, for example, a polycarbonate substrate having a film thickness of 200 μm. A semiconductor circuit layer 12 is laminated (bonded) on the flexible substrate 11 via, for example, a UV (ultraviolet) curable adhesive 11a. In the case where the thin film semiconductor circuit layer 12 is formed on such a flexible substrate 11, for example, in Japanese Patent Laid-Open Nos. 10-125931, 11-26733, and 2004-327836, etc. A thin film semiconductor circuit is formed on a heat resistant substrate (glass substrate) that has been introduced, and the thin film semiconductor circuit layer including the thin film semiconductor circuit is peeled off from the heat resistant substrate, and transferred entirely or partially onto a resin substrate. A thin film circuit transfer method (hereinafter referred to as “thin film circuit transfer method”) can be used.

  The thin film semiconductor circuit layer 12 is formed with a plurality of wiring groups, pixel electrode groups, pixel driving circuits, connection terminals, and the like arranged in the row direction and the column direction. The aforementioned TFT is used for the pixel drive circuit. The thin film semiconductor circuit layer 12 is formed with a row decoder 51 and a column decoder 52 (see FIG. 2) for selecting drive pixels.

  A plurality of pixel electrodes (drive electrodes) 13a arranged in a matrix form a display area 13 for displaying an image (two-dimensional information). A connection electrode 14 for connecting the transparent electrode layer 32 of the common electrode substrate 30 and the circuit wiring of the semiconductor circuit substrate 10 is formed on the outer peripheral portion of the thin film semiconductor circuit layer 12 (the outer periphery of the display region portion 13). . The film thickness of the semiconductor circuit substrate 10 is preferably 25 μm or more from the viewpoint of physical strength of the substrate when forming a thin film circuit, for example, and is 200 μm or less from the viewpoint of ensuring the flexibility of the substrate. It is desirable.

  A large number of microcapsules 21 are fixed by a binder 22 on the display area 13 of the semiconductor circuit substrate 10 and on the outer peripheral area thereof to form an electrophoretic display layer 20. The formation region 16 of the electrophoretic display layer 20 is shown in satin in FIG. The microcapsule 21 contains an electrophoretic dispersion medium and electrophoretic particles. The electrophoretic particles have a property of moving in the electrophoretic dispersion medium according to an applied voltage, and one type (one color) or more of electrophoretic particles are used. The film thickness of the electrophoretic display layer 20 is, for example, 50 to 75 μm.

  A common electrode substrate 30 covers the electrophoretic display layer 20. The common electrode substrate 30 is composed of a thin film film (transparent insulating synthetic resin base material) 31 having a transparent electrode layer 32 formed on the lower surface. The thin film 31 plays a role of sealing and protecting the electrophoretic display layer 20. For example, the thin film 31 that is the base of the common electrode substrate 30 is a polyethylene terephthalate (PET) film. The film thickness of the common electrode substrate 30 is desirably 10 to 200 μm, and more preferably 25 to 75 μm.

  The transparent electrode layer 32 is, for example, an indium oxide film (ITO film) doped with tin. The area of the transparent electrode layer 32 is indicated by hatching in FIG. 2 and is the same area as the common electrode substrate 30.

  A connection terminal 15 for electrical connection with an external circuit is provided on the outer periphery of the semiconductor circuit board 10, and the circuit wiring 17 of the semiconductor circuit board 10 connected to the connection terminal 15 is an outer edge of the common electrode substrate 30. Intersects.

  The circuit wiring of the semiconductor circuit substrate 10 and the transparent electrode layer 32 of the common electrode substrate 30 are connected outside the formation region 16 of the electrophoretic display layer 20. Specifically, the transparent electrode layer 32 and the connection electrode (terminal) 14 of the thin film semiconductor circuit layer 12 are connected via the conductive connection member 23.

  Next, a method for manufacturing the above-described electrophoretic display device will be described with reference to FIGS. In both figures, parts corresponding to those in FIG.

  First, as shown in FIG. 3A, a common electrode substrate 30 is manufactured. The common electrode substrate 30 is a transparent insulating material. For example, ITO 32 is deposited as a transparent conductive film on a polyethylene terephthalate (PET) film 31 by a sputtering method or the like to obtain a PET film on which an ITO film is formed. it can.

  Next, as shown in FIG. 3B, the mixed liquid of the microcapsule 21 and the binder 22 is uniformly applied on the ITO surface of the common electrode substrate 30 using, for example, a roll coater. After application, the electrophoretic display layer 20 is formed on the common electrode substrate 30 by drying at 80 ° C. for 20 minutes, and an electrophoretic display sheet having a film thickness of, for example, 100 μm is formed.

  On the other hand, as shown in FIG. 4A, the semiconductor circuit substrate 10 is manufactured by a process separate from the electrophoretic display sheet. In general, in the formation of a thin film semiconductor circuit on a resin substrate having a low heat-resistant temperature, it is possible to use a semiconductor manufacturing technique of a low temperature process, but the performance of the semiconductor film is low, and thus the performance of the TFT is also low. Therefore, in the embodiment, the semiconductor circuit substrate 10 is formed using the thin film circuit transfer method described above.

  That is, a thin film semiconductor in which a polysilicon semiconductor film is formed on a heat resistant substrate such as a quartz glass substrate (not shown) through a release layer, and a circuit for a matrix display such as a thin film transistor (TFT), a signal wiring, and a pixel electrode group is formed. The circuit layer 12 is formed. A temporary transfer substrate (not shown) is bonded onto the thin film semiconductor circuit layer 12 with a water-soluble adhesive, and the release layer is broken by light irradiation or the like to transfer the thin film semiconductor circuit 12 to the temporary transfer substrate side. Next, the thin film semiconductor circuit 12 of the temporary transfer substrate is bonded to the flexible resin substrate 11 through an insoluble adhesive. The flexible substrate 11 is, for example, a polycarbonate substrate having a film thickness of 200 μm. Further, the water-soluble adhesive between the temporary transfer substrate and the thin film semiconductor circuit substrate is dissolved and removed to separate the temporary transfer substrate.

  In this way, the semiconductor circuit substrate 10 is formed by peeling and transferring the thin film semiconductor circuit 12 in which the electrode wiring 13, the connection electrode 14, the connection terminal 15, and the like are formed on the flexible substrate 11 from the temporary transfer substrate.

  Next, as shown in FIG. 4B, a conductive connection member is formed on the connection electrode 14 for energization with the transparent electrode layer 32 (see FIG. 4C) provided on the semiconductor circuit substrate 10. 23 is arranged.

  An appropriate amount of the conductive connection member 23 may be disposed on the connection electrode 14 by an inkjet (droplet discharge) method, an offset printing method, or the like.

  Next, as shown in FIG. 4C, the semiconductor circuit substrate 10 and the electrophoretic display sheets (20, 30) are bonded together.

  First, the electrophoretic display sheet and the semiconductor circuit substrate 10 are aligned so as to face each other so that the electrophoretic display layer 20 is positioned in the display region portion 13 on the semiconductor circuit substrate 10, and the pressure is reduced by a press device described later. Lamination is performed at 90 ° C. and a pressure of 0.8 MPa in an atmosphere, and the electrophoretic display device 1 is manufactured by bonding the semiconductor circuit substrate 10, the electrophoretic display layer 20, and the common electrode substrate 30.

  During the laminating process, when a local force is applied to the end 18 of the common electrode substrate 30 that intersects the circuit wiring 17 of the semiconductor circuit substrate 10, the end 18 hits the device circuit (circuit wiring 17) of the semiconductor circuit substrate 10. The device may be broken or cracks may be generated.

  FIG. 5A is a plan view for explaining laminating using the press device according to the present invention, and FIG. 5B is an enlarged view of a cross section in the A-A ′ direction of FIG. FIG. 6A is a plan view for explaining laminating using a press device according to a comparative example, and FIG. 6B is an enlarged view of a cross section in the AA ′ direction of FIG. .

  As shown in FIGS. 6A and 6B, in the comparative example, the pressing flat plate 101 of the pressing device overlaps with the end portion 18 of the common electrode substrate 30 intersecting the circuit wiring 17 of the semiconductor circuit substrate 10. Yes. In this case, when the common electrode substrate 30 and the semiconductor circuit substrate 10 are laminated, a force may be applied to the end 18, and the end 18 may abut against the region 19 of the thin film semiconductor layer 12. This causes cracks in the thin film semiconductor layer 12. In the case of a flexible substrate, cracks are likely to grow. In particular, the region 19 is a region where the circuit wiring 17 connected to the connection terminal 15 that performs electrical connection with an external circuit is disposed. If the circuit wiring 17 is destroyed, the reliability of the device is reduced. .

  On the other hand, as shown in FIGS. 5A and 5B, when the pressing device of the present invention is used, the pressing flat plate 101 of the pressing device intersects the circuit wiring 17 of the semiconductor circuit substrate 10. The part which overlaps the edge part 18 of 30 is removed. For this reason, no force is directly applied to the end portion 18 of the common electrode substrate 30, a state where the end portion 18 abuts against the region 19 of the thin film semiconductor layer 12 can be avoided, and element breakdown and generation of cracks can be prevented. .

  In the above-described embodiments, examples of various film materials have been shown. However, the present invention is not limited to this, and various materials can be used.

  For example, as the flexible substrate 11, a resin material excellent in lightness, flexibility, elasticity, and the like can be used. For example, any of a thermoplastic resin and a thermosetting resin may be used. For example, polyolefins such as polyethylene, polypropylene, ethylene-propylene copolymer, ethylene-vinyl acetate copolymer, cyclic polyolefin, modified polyolefin, polyvinyl chloride, Vinylidene chloride, polystyrene, polyamide, polyimide, polyamideimide, polycarbonate, poly- (4-methylpentene-1), ionomer, acrylic resin, polymethylmethacrylate, acrylic-styrene copolymer, butadiene-styrene copolymer, polyol Polyester such as copolymer (EVOH), polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polycyclohexane terephthalate (PCT), polyether, polyether ketone (PEEK), poly -Terimide, polyacetal, polyphenylene oxide, modified polyphenylene oxide, polyarylate, aromatic polyester (liquid crystal polymer), polytetrafluoroethylene, polyvinylidene fluoride, other fluorine resins, styrene, polyolefin, polyvinyl chloride, polyurethane, Various thermoplastic elastomers such as fluororubber and chlorinated polyethylene, epoxy resin, phenol resin, urea resin, melamine resin, non-corrosive polyester, silicone resin, polyurethane, etc., or copolymers and blends mainly composed of these , Polymer alloys, and the like, and one or more of these can be used in combination (for example, as a laminate of two or more layers). The thickness of the flexible substrate 11 is about 1 to 500 μm, and more preferably about 25 to 200 μm from the viewpoint of mechanical strength and flexibility.

  As the thin film semiconductor circuit layer 12, for example, a pixel portion including a TFT connected to a gate line and a data line (not shown) and an electrode connected to the TFT, and a voltage is applied to the gate line and the data line to drive the pixel portion. And a driver portion including a TFT for the purpose.

  The material used as the adhesive layer between the flexible substrate 11 and the thin film semiconductor circuit layer 12 is, for example, a photo-curing adhesive such as a reactive curable adhesive, a thermosetting adhesive, or an ultraviolet curable adhesive, Various curable adhesives such as anaerobic curable adhesive can be used. In particular, it is preferable to use a photocurable adhesive from the viewpoint of reducing the cycle time of the process. As said photocurable material, an epoxy type, an acrylate type, and a silicone type photocurable material can be used, for example. The thickness of the adhesive layer is about 1 nm to 1 mm, more preferably about 10 nm to 10 μm.

  As described above, the electrophoretic display device of the present invention is uniformly coated with the microcapsules enclosing the electrophoretic dispersion medium and the electrophoretic particles encapsulated in the dispersion medium and the binder.

  Examples of the electrophoretic dispersion medium include alcohol solvents such as water, methanol, ethanol, isopropanol, butanol, octanol, and methyl cellosolve, various esters such as ethyl acetate and butyl acetate, acetone, methyl ethyl ketone, and methyl isobutyl ketone. Ketones, aliphatic hydrocarbons such as pentane, hexane and octane, alicyclic hydrocarbons such as cyclohexane and methylcyclohexane, aromatic hydrocarbons such as benzene, toluene, xylene and hexylbenzene, methylene chloride, chloroform and carbon tetrachloride , 1,2-dichloroethane and other halogenated hydrocarbons, carboxylates or other various oils, or a mixture of these with a surfactant or the like can be used.

  As described above, the electrophoretic particles are particles (polymer or colloid) having a property of moving to a desired electrode side by performing electrophoresis based on a potential difference in an electrophoretic dispersion medium. For example, black pigments such as aniline black and carbon black, white pigments such as titanium dioxide, zinc white, antimony trioxide, aluminum oxide, azo pigments such as monoazo, disazo, polyazo, isoindolinone, yellow lead, yellow iron oxide , Yellow pigments such as cadmium yellow, titanium yellow and antimony, red pigments such as quinacridone red and chrome vermillion, phthalocyanine blue and indanthrene blue, anthraquinone dyes, blue pigments such as bitumen, ultramarine blue and cobalt blue, phthalocyanine green, etc. Green pigments and the like. These particles may be used alone or in combination of two or more. Furthermore, these pigments include electrolytes, surfactants, metal soaps, resins, rubbers, oils, varnishes, charge control agents composed of particles such as compounds, or dispersing agents such as titanium coupling agents, lubricants, as necessary. Stabilizers and the like can be added.

  As a material constituting the microcapsule 21, it is preferable to use a flexible material such as a gum arabic / gelatin compound or a urethane compound. The microcapsule 21 can be formed using a known microencapsulation method such as an interfacial polymerization method, an insolubilization reaction method, a phase separation method, or an interfacial precipitation method. Further, the microcapsules 21 are preferably substantially uniform in size in order to exhibit an excellent display function. The microcapsule 21 having a substantially uniform size can be obtained by using, for example, filtration or specific gravity differential class. The size of the microcapsule 21 is usually about 30 to 60 μm.

  The electrophoretic display layer 20 is obtained by mixing the above-described microcapsules 21 in a binder resin 22 together with a desired dielectric constant regulator, and using the obtained resin composition (emulsion or organic solvent solution) on a substrate using a roll coater. It can be formed by a known coating method such as a method, a method using a roll laminator, a method by screen printing, or a spray method.

  The binder resin 22 that can be used is not particularly limited as long as it has good affinity with the microcapsule 21, excellent adhesion to the electrode, and has insulating properties.

  As this binder resin 22, the thing illustrated below can be used similarly to the insulating synthetic resin base material mentioned above.

  For example, polyethylene, chlorinated polyethylene, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, polypropylene, ABS resin, methyl methacrylate resin, vinyl chloride resin, vinyl chloride-vinyl acetate copolymer, vinyl chloride -Vinylidene chloride copolymer, vinyl chloride acrylate copolymer, vinyl chloride-methacrylic acid copolymer, vinyl chloride-acrylonitrile copolymer, ethylene-vinyl alcohol-vinyl chloride copolymer, propylene-vinyl chloride copolymer Thermoplastic resins such as coalescence, vinylidene chloride resin, vinyl acetate resin, polyvinyl alcohol, polyvinyl formal, and cellulose resin. Polyamide resin, polyacetal, polycarbonate, polyethylene terephthalate, polybutylene terephthalate, polyphenylene oxide, polysulfone, polyamideimide, polyaminobismaleimide, polyethersulfone, polyphenylenesulfone, polyarylate, grafted polyfinylene ether, polyetheretherketone, poly Polymers such as etherimide. Fluorine such as polytetrafluoroethylene, polyfluoroethylenepropylene, tetrafluoroethylene-perfluoroalkoxyethylene copolymer, ethylene-tetrafluoroethylene copolymer, polyvinylidene fluoride, polytrifluoroethylene chloride, fluororubber Resin. Silicon resins such as silicone resin and silicon rubber. As other binder materials, methacrylic acid-styrene copolymer, polybutylene, methyl methacrylate-butadiene-styrene copolymer, and the like can be used. In addition, as described in JP-A-10-149118, the binder material preferably has substantially the same dielectric constant of the electrophoretic display liquid and that of the dispersant.

  As described above, the common electrode substrate 30 is obtained by forming the transparent electrode layer 32 on the thin film 31. As the thin film 31, various materials for the flexible substrate 11 described above can be used as long as they are insulating transparent base materials. The thickness of the thin film 31 is preferably thinner than the thickness of the flexible substrate 11. More preferably, it is about half or less of the thickness of the flexible substrate 11.

  As the transparent electrode layer 32 to be used, for example, in addition to the above-mentioned ITO film, a tin oxide film doped with fluorine (FTO film), a zinc oxide film doped with antimony, a zinc oxide film doped with indium, A zinc oxide film doped with aluminum can be exemplified. The method for forming the transparent electrode on the thin film 31 is not particularly limited. For example, the transparent electrode is formed by sputtering, electron beam, ion plating, vacuum deposition, chemical vapor deposition (CVD) or the like. can do.

(Electronics)
The electrophoretic display device of the present invention can be applied to display portions of various electronic devices. FIG. 7 illustrates an example of an electronic device using an electrophoretic display device as a display portion.

  This figure is an example applied to a mobile phone, and the mobile phone 530 includes an antenna portion 531, an audio output portion 532, an audio input portion 533, an operation portion 534, and the electrophoretic display device 100 of the present invention. As described above, the electrophoretic display device 100 of the present invention can be used as a display unit of the mobile phone 530.

  The electrophoretic display device of the present invention is not limited to the above example, and can be applied to various electronic devices that perform image display and character display. For example, it can also be used for electronic paper, PDA, electronic notebook, electric bulletin board, display for advertising notice, and the like.

FIG. 1 is a plan view of an electrophoretic display device of the present invention. FIG. 2 is an enlarged view of a cross section in the A-A ′ direction of FIG. 1. 3A and 3B are diagrams for explaining a method for manufacturing an electrophoretic display device of the present invention. 4A to 4C are views for explaining a method for manufacturing an electrophoretic display device of the present invention. FIG. 5A is a plan view for explaining laminating using the press device according to the present invention, and FIG. 5B is an enlarged view of a cross section in the A-A ′ direction of FIG. 6A is a plan view for explaining laminating using the press device according to the present invention, and FIG. 6B is an enlarged view of a cross section in the A-A ′ direction of FIG. FIG. 7 is an explanatory diagram illustrating an example of an electronic apparatus according to the invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Electrophoretic display apparatus, 10 Semiconductor circuit board, 11 Flexible board, 11a Adhesive layer, 12 Thin film semiconductor circuit layer, 13 Display area | region part, 13a Drive (pixel) electrode wiring, 14 Connection electrode, 15 Connection terminal, 16 Electrophoretic display layer forming region, 17 circuit wiring, 18 edge, 19 region, 20 electrophoretic display layer, 21 microcapsule, 22 binder, 23 conductive connecting member, 30 common electrode substrate (transparent substrate), 31 thin film, 32 transparent electrode layers, 51 row decoder, 52 column decoder, 101 flat plate for press, 530 mobile phone

Claims (3)

Forming a thin film semiconductor circuit layer on a flexible substrate to obtain a semiconductor circuit substrate;
The transparent substrate having a transparent electrode layer formed on one surface and the semiconductor circuit substrate are bonded together so that the transparent electrode layer and the thin film semiconductor circuit layer face each other through an electrophoretic display layer containing charged particles in a dispersion medium. Comprising a second step,
When bonding is performed in the second step, no force is directly applied to a region where the wiring connected to the external connection terminal provided on the outer peripheral portion of the semiconductor circuit substrate and the peripheral portion of the transparent substrate overlap. Manufacturing method of display device. In the second step, bonding is performed by pressurizing with a press device,
The method of manufacturing an electrophoretic display device according to claim 1, wherein the press device includes a press plate from which a portion corresponding to the region is removed. An electronic apparatus comprising an electrophoretic display device manufactured by the method for manufacturing an electrophoretic display device according to claim 1 or 2 in a display unit.

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