JP2006322066A - Microwave-supplying unit for plasma cvd and apparatus for forming vapor deposition film with same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a microwave-supplying unit which is used for forming a vapor deposition film through plasma CVD using surface wave of microwave, can effectively suppress defects, especially abrasion, and can continuously form the vapor deposition film with a uniform thickness on the surface of a long film. <P>SOLUTION: The microwave-supplying unit comprises a hollow support which has at least a curved surface on its exterior surface and a surface wave generator which generates surface wave by microwave and is supported by the hollow support. The surface wave generator is composed of a waveguide that connects to a microwave source and extends into the interior of the hollow support, a slot antenna incorporated to a shield wall of the waveguide and a dielectric electrode plate that covers the slot antenna. The dielectric electrode plate is fixed, with its exterior surface being exposed, onto a wall of the hollow support so that the surface wave generator is supported by the hollow support. The exterior surface of the dielectric electrode plate is a curved surface that smoothly connects to the exterior surface of the hollow support. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a microwave supply apparatus used when forming a vapor deposition film by plasma CVD using a surface wave of microwaves, and an apparatus for forming a vapor deposition film using the microwave supply apparatus.

  Conventionally, in order to improve the characteristics of various substrates, a deposited film is formed on the surface by a plasma CVD method. For example, in the field of packaging materials, it is known to improve gas barrier properties by forming a deposited film by a plasma CVD method on plastic substrates such as containers and films. For example, using an organic metal compound such as an organosilicon compound and oxygen gas, a vapor deposition film made of silicon oxide or a compound containing carbon, silicon and oxygen as constituent elements is formed on the surface of a plastic substrate by plasma CVD. The method is known.

  By the way, plasma CVD is a method in which a thin film is grown using plasma, and basically a reaction that is generated by decomposing and decomposing a gas containing a source gas with electric energy by a high electric field under reduced pressure. It consists of a process of depositing seeds (plasma) on a substrate through a chemical reaction in a gas phase or on the substrate. A method of realizing such a plasma state using microwave glow discharge is known.

  Various surface wave plasmas using microwave surface waves have been proposed as a method of forming a deposited film by plasma CVD using microwaves (Patent Documents 1 and 2).

  Moreover, in the formation method of the vapor deposition film by surface wave plasma as described in Patent Documents 1 and 2, a substrate is disposed so as to face a microwave surface wave supply device, and a reactive gas is introduced between them. By supplying, a deposited film is formed on the surface of the substrate facing the surface wave supply device side. However, in this case, there is a problem that the reactant is deposited on the microwave surface wave supply device.

A method for forming a vapor deposition film that solves the problem of deposition of reactants on a microwave surface wave supply device has also been proposed. A method of forming a vapor deposition film on the surface of a substrate opposite to the surface wave supply device while disposing a wave transmissive substrate and supplying a reactive gas to the substrate surface side located on the opposite side of the surface wave supply device Is disclosed (Patent Document 3).
JP-A-10-158847 JP 2001-118698 A Japanese Patent Laid-Open No. 62-294181

  That is, in the method of Patent Document 3, no reactive gas is supplied between the microwave surface wave supply device and the microwave transmissive substrate, and the surface of the substrate opposite to the surface wave supply device is not supplied. Since the reactive gas is supplied, the problem of the deposition of the reactant on the surface wave supply device is effectively avoided.

  However, the method disclosed in Patent Document 3 still has a problem to be solved in that a vapor deposition film is continuously formed on a long plastic film. That is, in this method, since it is necessary for the microwaves to pass through the substrate, the microwave-permeable substrate and the surface wave supply device must be brought into close contact with each other, or the distance between the two must be set to a minute range. Don't be. For this reason, a problem arises when a long plastic film is used as a microwave-permeable substrate and a vapor deposition film is formed while continuously moving the plastic film. For example, when this long film is moved in close contact with the microwave supply device, the long film is worn, and when the long film is moved while maintaining a minute distance between the long film and the microwave supply device. Due to the shaking of the film, the distance between the two cannot be kept uniform, resulting in variations in the thickness of the deposited film.

  Accordingly, an object of the present invention is used to form a deposited film by plasma CVD using microwave surface waves, and in particular, inconveniences such as abrasion are effectively suppressed, and a uniform thickness is continuously provided on the surface of a long film. An object of the present invention is to provide a microwave supply apparatus capable of forming a vapor deposition film of the above and a vapor deposition film forming apparatus including the supply apparatus.

According to the present invention, it comprises a hollow support having at least a curved surface on the outer surface, and a surface wave generator using microwaves supported by the hollow support,
The surface wave generator includes a waveguide connected to a microwave supply source and extending inside the hollow support, a slot antenna incorporated in a shield wall of the waveguide, and covering the slot antenna The surface acoustic wave generator is attached to the hollow support by fixing the dielectric electrode plate to the wall of the hollow support so that the outer surface of the dielectric electrode plate is exposed. As well as being supported
An outer surface of the dielectric electrode plate is a curvature surface smoothly connected to the outer surface of the hollow support, and a microwave supply apparatus for plasma CVD is provided.

In the method for forming a deposited film of the present invention,
(1) The hollow support has a roller shape, and the outer surface of the dielectric electrode plate is substantially concentrically formed with the outer surface of the roller-shaped hollow support.
(2) A plurality of surface wave generators are supported along the circumferential direction on the curvature surface of the hollow support.
Is preferred.

According to the present invention, the raw fabric roller, the take-up roller, and the plasma CVD microwave supply device are disposed in a housing held in a vacuum state.
A gas supply pipe extends so as to face the outer surface of the dielectric electrode plate of the plasma CVD microwave supply device with a small space therebetween,
The long plastic film wound around the raw fabric roller is wound along the curvature surface of the hollow support of the microwave supply apparatus for plasma CVD and between the hollow support and the gas supply pipe. A surface on the side of the long plastic film that does not face the outer surface of the dielectric electrode by performing a plasma reaction by supplying a surface wave of microwaves and supplying a reactive gas from a gas supply pipe while winding with a roller An evaporation film forming apparatus is provided in which an evaporation film is continuously formed.

In the vapor deposition film forming apparatus of the present invention,
(3) A film surface treatment device is disposed in the housing, and after the surface treatment is performed by the film surface treatment device, the long film is interposed between the hollow support and the gas supply pipe. The formation of the deposited film through,
Is preferred.

  According to the microwave supply device of the present invention, the microwave surface wave generator is held by the hollow support, and in particular, the dielectric electrode plate from which the surface wave of the microwave is emitted is smooth with the curvature surface of the support. Therefore, while continuously moving the long plastic film along the outer surface of the hollow support, microwaves are formed in the form of surface waves on the reverse surface of the film (to the surface wave generator). A vapor deposition film can be formed on the opposite surface by plasma reaction. That is, since the outer surface of the dielectric electrode plate has the curvature surface as described above, it is possible to effectively suppress wear of the film due to contact with the outer surface of the dielectric electrode plate, Since it moves in close contact with the outer surface of the dielectric electrode plate, there is no variation in the distance between them, and a vapor deposition film having a uniform thickness can be formed continuously.

  Further, in the vapor deposition film forming apparatus of the present invention, the microwave supply device is provided between the raw fabric roller and the take-up roller, and passes through the curvature surface of the hollow support of the supply device. Since the long plastic film is wound around the take-up roller from the original roll, the surface of the long plastic film (facing the curvature surface of the hollow support) A vapor deposition film can be continuously formed on the non-side surface.

  Further, in the present invention, by holding a plurality of surface wave generators on the curvature surface of the hollow support, a thick deposited film can be formed in a short time, and the production rate can be increased. By changing the microwave output in the surface wave generator, it is possible to form a deposited film having a structure in which layers having different elemental compositions are laminated.

  The microwave supply apparatus of the present invention is for supplying a surface wave of a microwave and for forming a deposited film on the surface of a long film by a plasma reaction by the surface wave. This principle will be described with reference to FIG. To do.

  In FIG. 1, a chamber 1 is maintained at a predetermined degree of vacuum, and a gas supply pipe 5 connected to a gas supply source 3 is connected to a side wall of the chamber 1. A predetermined reactive gas is supplied. Also, a surface wave generator 10 is attached to the upper wall of the chamber 1 as a whole, and a long plastic film 13 on which a vapor deposition film is to be formed is located in close contact with the surface wave generator 10. Yes.

  The surface wave generator 10 includes a waveguide 10b connected to a microwave supply source 10a, and a slot antenna 10c is formed on a shield wall on the side of the waveguide 10b. A dielectric electrode plate 10d is provided so as to cover the antenna 10c. That is, as is clear from FIG. 1, the long plastic film 13 is moved so as to be in close contact with the dielectric electrode plate 10d on the slot antenna 10c.

  The slot antenna 10c is made of a metal such as aluminum and has a plurality of slots 15 arranged at intervals corresponding to the half wavelength (1 / 2λ) of the transmitted microwave. The dielectric electrode plate 10d is made of a material having low dielectric loss and excellent heat resistance, such as quartz glass, alumina, silicon nitride, etc., and its thickness is generally in the range of about 10 to 50 mm.

Formation of a vapor deposition film using the above surface wave generator 10 is performed as follows.
That is, the inside of the chamber 1 is depressurized to a degree of vacuum (for example, about 1 to 500 Pa, preferably about 5 to 50 Pa) at which glow discharge is generated by the introduction of microwaves. The surface of the moving long plastic film 13 (the surface not facing the dielectric electrode plate 10d) is supplied by supplying a reactive gas containing an organometallic compound from the gas supply pipe 5 into the chamber 1. ) A deposited film is formed on 13a.

  That is, the microwave transmitted from the microwave supply source 10a to the waveguide 10b leaks from the slot 15 of the slot antenna 10c into the dielectric electrode plate 10d, diffuses along the wall surface of the dielectric electrode plate 10d, Form surface waves. This surface wave is emitted from the dielectric electrode plate 10d through the microwave-permeable long plastic film 13 into the chamber 1 to generate a glow discharge, which decomposes the organometallic compound and the like in the reactive gas. Then, reactive species in a plasma state are generated, and the reactants are deposited in a film shape on the surface 13a of the long plastic film 13 to form a vapor deposition film.

  As already described, in such a plasma reaction by a microwave surface wave, a large area and high density plasma can be uniformly generated, and thus a vapor deposition film is formed on the surface 13a of the long plastic film 13. Suitable for Further, since the surface 13a of the film 13 on which the vapor deposition film is formed is located on the side not facing the dielectric electrode plate 10d, the reactant is deposited on the surface wave generator 10 (dielectric electrode plate 10d). This inconvenience is effectively avoided. Further, in the case where the vapor deposition film is formed on the surface 13a on the side of the film 13 that does not face the dielectric electrode plate 10d in this way, the plasma excitation point is close to the surface 13a of the film 13, and thus the film formation speed. However, there is an advantage that a layer excellent in gas barrier properties can be formed.

The microwave supply apparatus of the present invention is based on the above principle, and FIG. 2 shows the structure of a vapor deposition film forming apparatus including the microwave supply apparatus of the present invention.
In FIG. 2, the same members as those in FIG. 1 are indicated by the same reference numerals as in FIG.

  In the deposited film forming apparatus of FIG. 2, this apparatus has a housing indicated by 30 as a whole, and the microwave supply apparatus of the present invention indicated by A as a whole is disposed in the housing 30. According to the principle described above, a deposited film is formed on the long plastic film 13 (hereinafter sometimes simply referred to as a film).

  This microwave supply device A has a hollow support roller 20 that is provided so as not to rotate, and a surface wave generator 10 that generates a surface wave of microwaves based on the principle described above is provided on this roller 20. A plurality (three in FIG. 2) are supported. That is, in each surface wave generator A, a waveguide 10b connected to a microwave supply source (not shown in FIG. 2) extends inside the hollow support roller 20, and is attached to a shield wall of the waveguide 10b. A dielectric electrode plate 10 d provided so as to cover the slot antenna 10 c (slot 15 is omitted in FIG. 2) is fixed to the roller wall of the hollow support roller 20.

  In the microwave supply apparatus A of the present invention, as is understood from FIG. 2, a curvature surface in which the outer surface of the dielectric electrode plate 10d fixed to the roller wall of the hollow support roller 20 is smoothly connected, particularly preferably The surface is concentric with the roller wall. Therefore, even if the film 13 is moved while being in close contact with the outer surface of the dielectric electrode plate 10d, wear of the film 13 can be effectively avoided. In order to avoid such wear of the film 13, it is preferable that the outer surface of the dielectric electrode plate 10d is a mirror surface.

  The material of the hollow support roller 20 is not particularly limited, but is preferably made of metal in terms of microwave shielding properties, and at least a hollow support in contact with the film 13 other than the dielectric electrode plate 10d. The peripheral surface portion of the body roller 20 is preferably a mirror surface such as chrome plating.

  The housing 30 is divided into a base material transfer chamber 33 and a plasma processing chamber 35 by partition walls 31 and 31 so as to divide the hollow support roller 20 included in the microwave supply device A as described above into two parts. The surface wave generator 10 (dielectric electrode plate 10d) is located on the plasma processing chamber 35 side.

  Further, the base material conveyance chamber 33 accommodates an original fabric roller 51 and a take-up roller 53, and a plurality of intermediate rollers 55 are disposed between these rollers 51 and 53. Further, exhaust ports 30a and 30b are formed in the housing wall of the base material transfer chamber 33, and the inside of the base material transfer chamber 33 and the plasma processing chamber 35 are depressurized to a predetermined degree of vacuum by evacuation by a vacuum pump. It has become so.

  As is clear from FIG. 2, a long plastic film 13 is wound on the original fabric roller 51. The film 13 includes a plurality of intermediate rollers 55, a hollow support roller 20, and a plurality of intermediate rollers 55. Thus, the film is wound from the original fabric roller 51 to the winding roller 53 without slack.

  In addition, a pair of gas supply pipes 60, 60 extend in the plasma processing chamber 35 so as to face each of the dielectric electrode plates 10 d of the plasma generator 10 attached to the hollow support roller 20. The gas supply pipe 60 is made of a metal pipe or a porous pipe having a large number of holes, and is supplied with a reactive gas necessary for plasma CVD.

  That is, the inside of the plasma processing chamber 35 is depressurized to a predetermined degree of vacuum, a predetermined reactive gas is supplied from the gas supply pipe 60, and a microwave surface wave is supplied from each surface wave generator 10, while the film 13 Is wound on the take-up roller 53 via the hollow support roller 20 from the raw fabric roller 51, whereby a vapor deposition film is continuously formed on the surface 13a of the film 13 (the surface not facing the hollow support roller 20). It is done. That is, when the film 13 passes over the dielectric electrode plate 10d of each surface wave generator 10 in the plasma processing chamber 35, the deposited film is sequentially deposited on the surface 13a according to the principle described above. .

  In the vapor deposition film forming apparatus described above, it is preferable to dispose a deaeration tube (not shown) so as to face the dielectric electrode plate 10d of each surface wave generator 10. That is, by exhausting the reactive gas supplied from the gas supply pipes 60 and 60 from the deaeration pipe, a region where the reactive gas having a constant concentration always faces the dielectric electrode plate 10d (a region near the surface 13a of the film 13). And a vapor deposition film having a constant composition can be deposited.

Further, it is preferable that a film surface treatment device 61 is provided in the above-described base material conveyance chamber 33 at a position between the raw fabric roller 51 and the hollow support roller 20. That is, the long film 13 is transferred to the hollow support roller 20 and is formed at a stage before the deposition film is formed by the surface wave of the microwave supplied by each surface wave generator 10. By subjecting the treated surface to the surface treatment by the film surface treatment device 61, the adhesion between the deposited film to be formed and the surface of the long film 13 can be improved.
The film surface treatment apparatus 61 generally performs corona treatment, plasma treatment using argon, oxygen or the like.

  In the present invention, as the long plastic film 13 on which the deposited film is to be formed, a resin film known per se can be used. For example, low density polyethylene, high density polyethylene, polypropylene, poly 1-butene, poly 4-methyl-1-pentene or polyolefins such as random or block copolymers of ethylene, propylene, 1-butene, α-olefins such as 4-methyl-1-pentene, cyclic olefin copolymers, etc. Vinyl acetate copolymer, ethylene / vinyl alcohol copolymer, ethylene / vinyl compound copolymer such as ethylene / vinyl chloride copolymer, polystyrene, acrylonitrile / styrene copolymer, ABS, α-methylstyrene / styrene copolymer Styrenic resin such as coalescence, polyvinyl chloride, Polyvinylidene chloride, polyvinyl chloride / vinylidene chloride copolymer, polyvinyl compounds such as polymethyl acrylate and polymethyl methacrylate, polyamides such as nylon 6, nylon 6-6, nylon 6-10, nylon 11 and nylon 12, polyethylene The resin may be any one of thermoplastic polyesters such as terephthalate, polybutylene terephthalate, and polyethylene naphthalate, polycarbonate, polyphenylene oxide, biodegradable resins such as polylactic acid, and mixtures thereof. Moreover, you may consist of thermosetting resins, such as a polyimide and an epoxy resin.

  Further, the film 13 may have a gas barrier multilayer structure in which an olefin-based resin or the like is used as an inner and outer layer and an oxygen absorbing layer is provided between these inner and outer layers. By forming a deposited film on the surface of the film, the oxygen barrier property can be remarkably improved.

  The reactive gas used in the present invention contains an organometallic compound, and generally, a gas of an organometallic compound and an oxidizing gas are used as a reactive gas. The hydrocarbon which becomes can also be used together.

As the organometallic compound, an organosilicon compound is preferably used, but is not limited to an organosilicon compound as long as it reacts with an oxidizing gas to form a metal oxide. Various things, such as organoaluminum compounds, such as these, and an organic titanium compound can be used. Examples of organosilicon compounds include hexamethyldisilane, vinyltrimethylsilane, methylsilane, dimethylsilane, trimethylsilane, diethylsilane, propylsilane, phenylsilane, methyltriethoxysilane, vinyltriethoxysilane, vinyltrimethoxysilane, tetramethoxysilane, Organic silane compounds such as tetraethoxysilane, phenyltrimethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, etc., organic such as octamethylcyclotetrasiloxane, 1,1,3,3-tetramethyldisiloxane, hexamethyldisiloxane A siloxane compound or the like is used. In addition to these materials, aminosilane, silazane, and the like can also be used. These organometallic compounds can be used alone or in combination of two or more. Further, the organosilicon compounds mentioned above, silane (SiH ₄₎ and can be used in combination of silicon tetrachloride.

Oxygen or NO _x is used as the oxidizing gas, and argon or helium is used as the carrier gas.

Further, as the carbon source, hydrocarbons such as CH ₄ , C ₂ H ₄ , C ₂ H ₆ , C ₃ H ₈ may be used in addition to the organosilicon compound and the organometallic compound.

  In the microwave supply device A of the present invention used in the vapor deposition film forming apparatus described above, a plurality of (three in FIG. 2) surface wave generators 10 are incorporated in the hollow support roller 20. Of course, the number of the surface wave generators 10 may be one. However, in order to increase the winding speed of the long film 13 and quickly form a vapor deposition film having a constant thickness, the number of surface wave generators is preferably a plurality, particularly 3 or more. . Also, when a plurality of surface wave generators 10 are incorporated in the hollow support roller 20, different plasma reaction conditions can be adopted in each surface wave generator 10, whereby films having different characteristics are layered. The laminated vapor deposition film can be continuously formed on the surface 13a of the long film 13, which is a great advantage of the present invention.

  For example, by using a different organometallic compound for each surface wave generator 10, it is possible to form a deposited film in which layers mainly composed of different types of metal oxides are stacked.

  In general, it is known that a vapor-deposited film with a high degree of organicity has high adhesion to plastic, and also has high water repellency, and a vapor-deposited film with a large amount of metal oxide components (high inorganicity) adheres to plastic. It is known that the gas barrier property is high although the property is low. Therefore, by utilizing this, a highly organic layer is formed on the surface 13a side of the long film 13, a highly inorganic layer is formed in the intermediate layer, and a highly organic layer is formed again on the outer surface. By forming, it is possible to form a vapor deposition film having excellent adhesion to the long film 13 and excellent gas barrier properties, and also having good water repellency. It is most suitable for use as a packaging bag filled with various beverages.

  The vapor deposition film having the layer structure as described above can be easily formed by adjusting the composition of the reactive gas for each surface wave generator 10, for example. That is, when the supply amount of the oxidizing gas is small compared to the organometallic compound, the level of oxidative decomposition of the organometallic compound is low, and a polymer is formed. As a result, the organic substance having a large amount of carbon is rich. It becomes a layer having high adhesion to plastic and high water repellency. Further, by increasing the supply amount of the oxidizing gas as compared with the organometallic compound, the oxidative decomposition of the organometallic compound proceeds to a high level, so that a nearly complete metal oxide is formed. As a result, it becomes a layer with a high gas barrier property with a small amount of carbon and rich in inorganic properties. Therefore, when three surface wave generators 10 are arranged as shown in FIG. 2, in each of the surface wave generators 10 arranged on the upstream side and the downstream side in the flow direction of the long film 13, A layer having high adhesion is formed on the surface 13a side of the long film 13 by supplying only the gas of the organometallic compound or reducing the supply amount of an oxidizing gas such as oxygen supplied together with the organometallic compound. Furthermore, a layer having high water repellency is formed on the outer surface. On the other hand, in the intermediate surface wave generator 10, by increasing the supply amount of the oxidizing gas as compared with the organometallic compound, there is a small amount of carbon in the middle of the above layer, and a gas barrier property with high inorganicity. It is possible to form an excellent layer.

  As described above, when the type and composition of the reactive gas are changed for each surface wave generator 10, the reactive gas supplied to each surface wave generator 10 is adjacent so as not to be mixed. A partition wall that does not hinder the movement of the long film 13 is provided between the matching surface wave generators 10, and the above-described deaeration pipes are arranged in each region where each surface wave generator 10 is provided. It is desirable to keep it.

  Moreover, the laminated structure of the vapor deposition film mentioned above can be formed not only by the method of adjusting the composition of the reactive gas but also by adjusting the output of the microwave. In other words, when the microwave output is low, a layer with high adhesion to plastics with a large amount of carbon and excellent water repellency is formed. When the microwave output is high, inorganicity with a small amount of carbon is achieved. A rich layer having a high gas barrier property can be formed.

This output change method is based on the following principle.
For example, when an organic silicon oxide is taken as an example, it is considered that a silicon oxide film is formed by an organic silicon compound and an oxidizing gas through the following reaction path.
(a) Extraction of hydrogen: SiCH ₃ → SiCH ₂
(b) Oxidation: SiCH ₂ → SiOH
(c) Dehydration condensation: SiOH → SiO

That is, when glow discharge by microwave is performed at a high output, for example, an output of 100 W or more, the organosilicon compound reacts all the way to the stage (c). As a result, the gas barrier property with a high level of oxidative decomposition and a small amount of carbon. A high layer is formed. On the other hand, when glow discharge by microwave is performed at a low output, for example, about 20 to 80 W, a reaction between radicals of SiCH ₂ generated in the step (a) occurs, and an organosilicon compound polymer is generated. As a result, A layer having a large amount of carbon, that is, a layer having high adhesion to plastic and good water repellency is formed. Therefore, each of the surface wave generators 10 arranged upstream and downstream in the flow direction of the long film 13 outputs a microwave at a low output, and the intermediate surface wave generator 10 has a high output. It is preferable to output a microwave and form a layer having a high gas barrier property.

  Of course, the above-described reactive gas composition adjustment and microwave output adjustment are appropriately set according to the number of surface wave generators 10 provided on the hollow support roller 20 and the required characteristics of the deposited film. For example, when characteristics such as water repellency are not required, the reaction conditions can be set so that the outermost surface of the deposited film is a layer rich in inorganic properties and having high gas barrier properties.

  In the present invention described above, the surface wave generator 10 is mounted on the hollow support roller 20, but the region where the surface wave generator 10 is attached is formed with a predetermined curvature surface and is stretched. The member to which the surface wave generator 10 is attached is not limited to a roller shape as long as the length film 13 has a shape that can smoothly move along the curvature surface. For example, the surface wave generator 10 (dielectric electrode plate 10d) can be provided on a hollow support having a semicircular cross section.

The figure for demonstrating the principle of the formation method of the vapor deposition film by the plasma reaction using the surface wave of a microwave. The figure which shows the structure of the vapor deposition film forming apparatus provided with the microwave supply apparatus of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10: Microwave generator 10b: Waveguide 10c: Slot antenna 10d: Dielectric electrode plate 13: Long film 20: Hollow support roller 51: Original fabric roller 53: Winding roller 60: Gas supply pipe

Claims (5)

A hollow support having at least a curved surface on the outer surface, and a microwave surface wave generator supported by the hollow support,
The surface wave generator includes a waveguide connected to a microwave supply source and extending inside the hollow support, a slot antenna incorporated in a shield wall of the waveguide, and covering the slot antenna The surface acoustic wave generator is attached to the hollow support by fixing the dielectric electrode plate to the wall of the hollow support so that the outer surface of the dielectric electrode plate is exposed. As well as being supported
2. The plasma CVD microwave supply apparatus according to claim 1, wherein the outer surface of the dielectric electrode plate is a curvature surface smoothly connected to the outer surface of the hollow support.   The plasma CVD according to claim 1, wherein the hollow support has a roller shape, and an outer surface of the dielectric electrode plate is substantially concentrically formed with an outer surface of the roller-shaped hollow support. Microwave supply equipment.   3. The plasma CVD microwave supply apparatus according to claim 1, wherein a plurality of the plurality of surface wave generators are supported along a circumferential direction on a curvature surface of the hollow support. In the housing held in a vacuum state, the raw fabric roller, the take-up roller, and the microwave supply apparatus for plasma CVD according to claim 1 are arranged,
A gas supply pipe extends so as to face the outer surface of the dielectric electrode plate of the plasma CVD microwave supply device with a small space therebetween,
The long plastic film wound around the raw fabric roller is wound along the curvature surface of the hollow support of the microwave supply apparatus for plasma CVD and between the hollow support and the gas supply pipe. A surface on the side of the long plastic film that does not face the outer surface of the dielectric electrode by performing a plasma reaction by supplying a surface wave of microwaves and supplying a reactive gas from a gas supply pipe while winding with a roller The vapor deposition film is formed continuously on the vapor deposition film forming apparatus.   A film surface treatment device is disposed in the housing, and after the surface treatment is performed by the film surface treatment device, the long film is deposited between the hollow support and the gas supply pipe. The vapor deposition film forming apparatus according to claim 4, wherein the film is formed.

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