JP2006319065A5 - - Google Patents

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Publication number
JP2006319065A5
JP2006319065A5 JP2005138949A JP2005138949A JP2006319065A5 JP 2006319065 A5 JP2006319065 A5 JP 2006319065A5 JP 2005138949 A JP2005138949 A JP 2005138949A JP 2005138949 A JP2005138949 A JP 2005138949A JP 2006319065 A5 JP2006319065 A5 JP 2006319065A5
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JP
Japan
Prior art keywords
wafer
exposure apparatus
plate
liquid
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005138949A
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Japanese (ja)
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JP2006319065A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2005138949A priority Critical patent/JP2006319065A/en
Priority claimed from JP2005138949A external-priority patent/JP2006319065A/en
Publication of JP2006319065A publication Critical patent/JP2006319065A/en
Publication of JP2006319065A5 publication Critical patent/JP2006319065A5/ja
Withdrawn legal-status Critical Current

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Claims (5)

体を介してウェハを露光する露光装置であって、
レチクルのパターンを前記ウェハに投影する投影光学系と、
前記ウェハをチャックで保持し、移動するステージとを備え、
前記ステージは、前記チャックで保持された前記ウェハの周に配置され、前ウェハともに前記液体を支持するを有し、
その板前記液体と接触する表面は、配列間隔が50nm乃至500μm,突起高さが50nm乃至200μmである微細構造が形成されていることを特徴とする露光装置。
An exposure apparatus for exposing a wafer through the liquid body,
A projection optical system for projecting a reticle pattern onto the wafer;
A stage for holding and moving the wafer with a chuck;
The stage is arranged in the circumferential side of the wafer held by the chuck, prior SL has a plate for supporting the liquid to the wafer together with,
The surface in contact with the liquid of the plate, the arrangement interval is 50nm to 500 [mu] m, the exposure apparatus characterized by microstructure projection height is Ru 50nm to 200μm der is formed.
前記前記液体と接触する表面の材質は、Si,SiC,SiN,Al またはSiO であることを特徴とする請求項1記載の露光装置。 The material of the surface in contact with the liquid in the plate, Si, SiC, SiN, exposure apparatus according to claim 1, characterized in that the Al 2 O 3 or SiO 2. 前記は、交換可能であることを特徴とする請求項1記載の露光装置。 The exposure apparatus according to claim 1, wherein the plate is replaceable. 前記板の前記液体と接触する表面の接触角は、30°以上であることを特徴とする請求項1記載の露光装置。 The contact angle of the surface in contact with the liquid in the plate, exposure apparatus according to claim 1, wherein the der Rukoto 30 ° or more. 請求項1乃至のうちいずれか一項記載の露光装置を用いてウェハを露光するステップと、
その露光されたウェハを現像するステップとを有することを特徴とするデバイス製造方法。
Exposing the wafer using the exposure apparatus according to any one of claims 1 to 4 ,
Device manufacturing method characterized by a step of developing the exposed wafer.
JP2005138949A 2005-05-11 2005-05-11 Exposure apparatus Withdrawn JP2006319065A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005138949A JP2006319065A (en) 2005-05-11 2005-05-11 Exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005138949A JP2006319065A (en) 2005-05-11 2005-05-11 Exposure apparatus

Publications (2)

Publication Number Publication Date
JP2006319065A JP2006319065A (en) 2006-11-24
JP2006319065A5 true JP2006319065A5 (en) 2008-08-07

Family

ID=37539476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005138949A Withdrawn JP2006319065A (en) 2005-05-11 2005-05-11 Exposure apparatus

Country Status (1)

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JP (1) JP2006319065A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009054784A (en) 2007-08-27 2009-03-12 Canon Inc Auxiliary plate, and exposure device having it
JP2010251745A (en) * 2009-04-10 2010-11-04 Asml Netherlands Bv Immersion lithography device and device manufacturing method
JP6155581B2 (en) * 2012-09-14 2017-07-05 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
JP6418281B2 (en) * 2017-06-07 2018-11-07 株式会社ニコン Exposure equipment

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