JP2006314869A5

JP2006314869A5 -

Info

Publication number: JP2006314869A5
Application number: JP2005137558A
Authority: JP
Filing date: 2005-05-10
Publication date: 2008-01-31

Description

上記目的を達成するために、本発明によれば、第１の半導体プロセスとパーフルオロ化合物またはその前駆体を含むガスを総排ガスとして排出する第２の半導体プロセスが行われる半導体プロセスチャンバの下流で第１の排出導管を介して接続された排気ポンプに接続させるための第２の排出導管と、
前記第２の排出導管から分岐する第３の排出導管と、
前記第２の排出導管と第３の排出導管の分岐点よりも下流で前記第２の排出導管に設けられ、前記第１の半導体プロセスが行われている間は開放されて前記第１の半導体プロセスにおける排ガスを前記第２の排出導管を介して排出させ、前記第２の半導体プロセスが行われている間は閉鎖される第１の開閉弁と、
前記第２の排出導管と第３の排出導管の分岐点よりも下流で前記第３の排出導管に設けられ、前記第２の半導体プロセスが行われている間は開放されて前記第２の半導体プロセスにおける排ガスを前記第３の排出導管を介して排出させ、前記第１の半導体プロセスが行われている間は閉鎖される第２の開閉弁と、
前記第１の開閉弁の下流で前記第２の排出導管に接続され、前記第１の半導体プロセスからの排ガスを処理するための第１の処理装置と、
前記第２の開閉弁の下流で前記第３の排出導管に接続され、前記パーフルオロ化合物またはその前駆体を大気圧プラズマで分解する第２の処理装置と、
前記第２の開閉弁の下流、かつ前記第２の処理装置の上流で、前記第３の排出導管に設けられ、主として前記第２の半導体プロセスからの排ガス中に残留する第１の半導体プロセスからの排ガスを処理するための乾式処理装置と
を備える半導体プロセスチャンバからの排ガスを除害するためのシステムが提供される。
また、本発明によれば、半導体プロセスチャンバから排出されるパーフルオロ化合物またはその前駆体を含む排出ガスを除害する排出ガス除害システムであって、１のライン上に、前記パーフルオロ化合物またはその前駆体を大気圧プラズマで分解するプラズマ処理装置と、前記プラズマ処理装置の上流側に設けられた、前記排ガス中の腐食性物質を吸収する乾式固体吸収剤充填筒とを備える排出ガス除害システムが提供される。 In order to achieve the above object, according to the present invention, a first semiconductor process and a second semiconductor process in which a gas containing a perfluoro compound or a precursor thereof is discharged as a total exhaust gas is performed downstream of a semiconductor process chamber. A second discharge conduit for connection to an exhaust pump connected via the first discharge conduit;
A third discharge conduit branched from the second discharge conduit;
Provided in the second discharge conduit downstream from the branch point of the second discharge conduit and the third discharge conduit, and is opened during the first semiconductor process and is opened. A first on-off valve that discharges exhaust gas in the process through the second discharge conduit and is closed while the second semiconductor process is performed;
Provided in the third discharge conduit downstream from the branch point of the second discharge conduit and the third discharge conduit, and is opened during the second semiconductor process and is opened. Exhaust gas in the process is exhausted through the third exhaust conduit, and a second on-off valve that is closed while the first semiconductor process is performed;
A first treatment device connected to the second discharge conduit downstream of the first on-off valve for treating exhaust gas from the first semiconductor process;
A second processing device connected to the third discharge conduit downstream of the second on-off valve and decomposing the perfluoro compound or a precursor thereof with atmospheric pressure plasma;
From the first semiconductor process that is provided in the third discharge conduit downstream of the second on-off valve and upstream of the second processing apparatus and remains mainly in the exhaust gas from the second semiconductor process. A system is provided for ablating exhaust gases from a semiconductor process chamber comprising a dry processing apparatus for treating the exhaust gases.
According to the present invention, there is also provided an exhaust gas abatement system for detoxifying an exhaust gas containing a perfluoro compound or a precursor thereof exhausted from a semiconductor process chamber, wherein the perfluoro compound or the Exhaust gas abatement comprising a plasma processing apparatus that decomposes the precursor with atmospheric pressure plasma, and a dry solid absorbent-filled cylinder that is provided upstream of the plasma processing apparatus and absorbs corrosive substances in the exhaust gas. A system is provided.

Claims

An exhaust gas removal system for removing exhaust gas containing a perfluoro compound or a precursor thereof exhausted from a semiconductor process chamber, wherein the perfluoro compound or a precursor thereof is converted into atmospheric pressure plasma on one line. An exhaust gas abatement system comprising: a plasma processing apparatus that decomposes; and a dry solid absorbent filling cylinder that is provided upstream of the plasma processing apparatus and absorbs corrosive substances in the exhaust gas.

The exhaust gas abatement system according to claim 1, wherein the solid absorbent is selected from copper monoxide and soda lime.

The exhaust gas abatement system according to claim 1, further comprising a filter unit that captures particles in the exhaust gas downstream of the dry solid absorbent filling cylinder.

The exhaust gas abatement system according to any one of claims 1 to 3, further comprising a heating unit in a line connecting the semiconductor process chamber and the dry solid absorbent filling cylinder.

The cooling trap which cools and captures and removes the liquefiable substance contained in the exhaust gas is further provided between the semiconductor process chamber and the dry solid absorbent filling cylinder. Exhaust gas abatement system.

A second line is provided between the semiconductor process chamber and the apparatus disposed upstream from the first line, and the flow of the exhaust gas to the first line and the flow to the second line; The exhaust gas abatement system according to any one of claims 1 to 5, further comprising an on-off valve that switches between the two.

The exhaust gas abatement system according to any one of claims 1 to 6, further comprising an apparatus for preventing a backflow of the exhaust gas between the dry solid absorbent filling cylinder and the plasma processing apparatus.