WO2008068917A1

WO2008068917A1 - Device for detoxicating semiconductor production exhaust gas

Info

Publication number: WO2008068917A1
Application number: PCT/JP2007/062396
Authority: WO
Inventors: Toshiaki Kato; Tatsuro Beppu; Hiroshi Imamura
Original assignee: Kanken Techno Co., Ltd.
Priority date: 2006-12-01
Filing date: 2007-06-20
Publication date: 2008-06-12
Also published as: JPWO2008068917A1; TW200831178A

Abstract

A device for detoxicating semiconductor production exhaust gas capable of long-term, continuous operation while exhibiting excellent space saving performance, by which semiconductor production exhaust gas of high flow rate containing PFCs, and the like, can be detoxicated surely and efficiently. The device is characterized by comprising a plurality of detoxization units (12) that consist of a plasma jet torch (18) and a reaction tube (24) provided on the plasma jet ejection side of the plasma jet torch (18) to surround plasma jet (P) and exhaust gas (F) supplied toward the plasma jet (P) and performing thermal decomposition on the exhaust gas (F) internally and that are connected with semiconductor production equipment (16) through each inlet piping (38) provided with an inlet valve (40) for opening/closing the channel, and each outlet piping (37) provided with an outlet valve (35) for opening/closing the channel and communicating with the exhaust side end of each reaction tube (24).

Description

Semiconductor manufacturing exhaust gas abatement system

Technical field

TECHNICAL FIELD [0001] The present invention relates to a detoxification device for decomposing and detoxifying semiconductor manufacturing exhaust gas containing PFCs and the like using a non-migration type plasma jet.

Background art

[0002] Various types of fluorine compound gases are used as cleaning gases, etching gases, and the like in manufacturing processes of semiconductors and liquid crystals. Such fluorine compounds are called "PF Cs etc."

4, C F

2 6, C F

3 8, C F

4 8, CF, etc. 5 8 Monofluorocarbons, CHF, etc. Hyde mouth fluorocarbons, SF, NF, etc.

3 6 3 Inorganic fluorine-containing compounds.

[0003] Various types of PFCs used in the manufacturing process of semiconductors and liquid crystals were used as N, Ar, or additive gases used as carrier gas, purge gas, etc.

2

O, H, NH, CH, etc. as semiconductor manufacturing exhaust gas (hereinafter simply referred to as “exhaust gas”)

2 2 3 4

Discharged.

[0004] Here, the proportion of PFCs and the like in the exhaust gas is larger than that of other gases such as N and Ar.

2

These PFCs have a global warming coefficient (GWP) of thousands compared to CO.

2

The lifetime of the atmosphere, which is tens of thousands of times, is as long as thousands to tens of thousands of years compared to CO.

2

Even when a small amount is discharged into the air, the effect is enormous. In addition, CF

Four

Perfluorocarbons typified by F have stable C F bonds (bond energy)

2 6

It is known that decomposition is not easy. For this reason, various technologies have been developed to remove used PFCs from exhaust gas.

[0005] As a technique for removing such exhaust gas containing hardly decomposable PFCs, an arc is generated by applying a discharge voltage between non-transfer electrodes of a plasma jet torch, and a working gas is sent to the arc. To generate a so-called non-migration type plasma jet, and to supply exhaust gas to the generated plasma jet, PFCs etc. A detoxification unit that thermally decomposes with zumajit has been proposed (see, for example, Patent Document 1).

[0006] In this abatement unit using a plasma jet, the temperature of the plasma jet is approximately several thousand to several tens of thousands of degrees C. by using a diatomic molecular gas such as nitrogen gas or hydrogen gas as the working gas. (In this case, the atmospheric temperature of the plasma jet will be several thousand degrees Celsius), and PFCs, especially perfluorocarbons and other difficult-to-decompose exhaust gases are instantly and irreversibly thermally decomposed and removed. be able to.

Patent Document 1: Japanese Patent Laid-Open No. 2005-205330

Disclosure of the invention

Problems to be solved by the invention

[0007] While using a small power source with an output of less than 15kW for such an abatement unit, this abatement unit is compact and excellent in space saving, and the power is also excellent in exhaust gas abatement efficiency. If a single abatement device is configured, the maximum amount of exhaust gas that can be treated by one abatement device is approximately 100 liters Z at maximum. Therefore, with such a device, it was powerful enough to meet the needs of “a single abatement device removed a large amount of exhaust gas exceeding loo liters Z”.

[0008] In addition, it has been confirmed that the life of the plasma jet torch in such an abatement unit is about 3 to 6 months, and when the life of the plasma jet torch comes or for some reason If the torch fails, or if the plasma jet misfires for any reason other than life or failure, the abatement unit must be stopped and maintained. For this reason, it is almost impossible to operate the abatement device continuously for a long period of time (for example, over 6 months). Also, in order to stop and maintain the abatement unit, the operation of the semiconductor manufacturing facility must also be stopped, which makes it difficult to improve the operating rate of the semiconductor manufacturing equipment.

[0009] Therefore, the main problem of the present invention is a semiconductor that can reliably and efficiently remove a large flow rate of semiconductor manufacturing exhaust gas containing PFCs and the like, and can operate continuously for a long period of time and is excellent in space saving. It is to provide a production exhaust gas abatement apparatus.

Means for solving the problem [0010] The invention described in claim 1 is the following: "Plasma jet torch (18) and plasma jet torch (18) provided on plasma jet ejection side, plasma jet (P) and this plasma jet KP) A reaction cylinder (24) that surrounds the exhaust gas (F) supplied toward the interior and thermally decomposes the exhaust gas (F) is provided inside, and an inlet valve (40) that opens and closes the flow path is provided. A plurality of detoxification units (12) connected to the semiconductor manufacturing apparatus (16) via individual inlet pipes (38) and an outlet valve (35) for opening and closing the flow path are provided, and each reaction cylinder ( 24) a semiconductor production exhaust gas abatement device (10) characterized by comprising an individual outlet pipe (37) communicating with the discharge side end of 24).

In the present invention, the plurality of abatement units (12) are connected to the semiconductor manufacturing apparatus (16) via the individual inlet pipe (38) provided with the inlet valve (40) for opening and closing the flow path. Therefore, according to the flow rate of the semiconductor manufacturing exhaust gas (F) discharged from the semiconductor manufacturing equipment (16), the inlet valve (40) of the individual inlet pipe (38) is opened and closed, and the abatement unit used ( The number of 12) can be increased or decreased, and some of the abatement units (12) can be stopped for backup.

[0012] Close the inlet valve (40) and close the outlet valve (35) provided in the individual outlet pipe (37) communicating with the discharge side end of the reaction tube (24). This allows the abatement unit (12) to be completely decoupled from the exhaust gas (F) treatment flow and is most damaged by the operation of the abatement unit (10) (i.e. requires the most maintenance). ) Maintenance of the abatement unit (12) can be performed without stopping the operation of the abatement device (10). As a result, the abatement device (10) can be operated continuously for a long time.

[0013] Since a plasma abatement machine equipped with a plasma jet torch (18) is used as the abatement unit (12), not only the pyrolysis of CF but also the exhaust gas generated in the semiconductor manufacturing process (F )

Four

Pyrolysis can be reliably performed with low energy consumption.

[0014] Since the abatement device (10) is configured by a plurality of abatement units (12), a plurality of abatement devices configured by a single abatement unit (12) are installed. Compared to the case, it can be made compact and excellent in space saving.

[0015] The invention described in claim 2 is the semiconductor manufacturing exhaust gas (F) detoxifying device (10) according to claim 1, wherein the temperature in the reaction tube (24) is , Pressure or plasma jet (P) It is characterized by sensing at least one of the ignition states and automatically controlling the inlet valve (40) based on the sensed information '', so that the abatement unit (12) When trouble occurs, the exhaust gas treatment at the troubled abatement unit (12) is immediately interrupted and the treatment of the exhaust gas (F) can be automatically switched to another abatement unit (12). it can. Therefore, it is possible to prevent the exhaust gas (F) removal treatment capability from being lowered and to reduce the operation management burden of the removal device (10). In particular, when performing such automatic control, as described in claim 3, there are three or more abatement units (12) equipped and two abatement units (12) adjacent to each other. It is preferable to always stop the sandwiched abatement unit (12) for backup.

[0016] The invention described in claim 4 is the "detoxification" in the semiconductor manufacturing exhaust gas (F) detoxification device (10) according to any one of claims 1 to 3. Unit (12) n units (where n is an integer greater than or equal to 3) n-1 units (where n is an integer greater than or equal to 3) power supply units (20) are provided, via switch (26) The power supply unit (20) connected to the abatement unit (12) can be switched '', and the power supply unit (20) mounted on the abatement device (10) is thus By reducing the number of the abatement units less than the number of the abatement units (12), the abatement device (10) can be made compact.

[0017] The invention described in claim 5 is the “detoxification” in the semiconductor manufacturing exhaust gas (F) detoxification device (10) according to any one of claims 1 to 4. The exhaust gas (F) decomposed in the unit (12) is combined with an outlet scrubber (14) to be washed and cooled, and the exhaust gas (F) before decomposition in the abatement unit (12) is discharged to the outlet scrubber ( 14) is provided with a normally closed binos pipe (42) to be supplied to the inlet side. '' The cleanliness of the treated exhaust gas (F) can be further improved, and even if some trouble occurs in the abatement unit (12), the exhaust gas (F) is discharged via the bypass pipe (42). By supplying and cleaning the inlet side of the Ross Clava (14), the environmental load can be minimized. The

The invention's effect

[0018] According to the present invention, the plurality of abatement units are connected to the semiconductor manufacturing apparatus via the individual inlet pipe provided with the inlet valve for opening and closing the flow path. Depending on the flow rate of discharged semiconductor manufacturing exhaust gas, you can open and close the inlet valves of the individual inlet pipes to increase or decrease the number of abatement units used, and stop some of the abatement units. It can also be used for backup.

[0019] In addition, by closing the inlet valve and closing the outlet valve provided in the individual outlet pipe communicating with the discharge side end of the reaction cylinder, the cleaning unit to be maintained can The processing flow force can also be completely cut off. For this reason, it is possible to operate the abatement device for a long period of time without having to stop the entire abatement device during maintenance.

[0020] Since a plasma abatement machine equipped with a non-migration type plasma jet torch is used as the abatement unit, not only pyrolysis of CF but also exhaust gas generated in the semiconductor manufacturing process is used.

Four

Pyrolysis can be reliably performed with low energy consumption.

[0021] Since a plurality of abatement devices are configured with a plurality of abatement units! /, It is possible to remove the abatement devices as compared with the case where a plurality of abatement devices configured with a single abatement unit are installed. The entire harming device can be made compact and excellent in space saving.

[0022] Accordingly, there is provided a semiconductor production exhaust gas abatement apparatus that can reliably and efficiently remove a large flow rate of semiconductor production exhaust gas containing PFCs and the like, and is capable of continuous operation for a long period of time and is excellent in space saving. be able to.

Brief Description of Drawings

FIG. 1 is a configuration diagram showing an outline of a semiconductor manufacturing exhaust gas abatement apparatus according to one embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along line AA in FIG.

FIG. 3 is a configuration diagram showing an outline of an abatement unit in the present invention.

FIG. 4 is a configuration diagram showing an outline of a semiconductor manufacturing exhaust gas abatement apparatus according to another embodiment of the present invention.

Explanation of symbols

[0024] (10) Detoxification device

(12)… Abatement unit

(14)… Exit scrubber (16) · Semiconductor manufacturing equipment

(18) ··· Plasmajet,

(20) Power unit

(22) ... Working gas supply-

(24) ··· Reaction tube

(28) · "Switch

(32) · "Swirl shower

(34)

(35) ··· Outlet valve

(36) ... Main piping

(37) ··· Individual piping

(38) ... Individual inlet piping

(40) ... Inlet valve

(44) · Valve

(46) "Exhaust gas inlet

(48)

(50) · "Spraynos, Nore

(54) ... Exhaust fan

F- --Semiconductor manufacturing exhaust gas

Η ··· Insulation

Ρ ... plasma jet

BEST MODE FOR CARRYING OUT THE INVENTION

FIG. 1 is a configuration diagram showing an outline of a semiconductor production exhaust gas abatement apparatus (10) of the present embodiment. 2 is a cross-sectional view taken along the line A— in FIG. As shown in these figures, the abatement device (10) of the present embodiment is roughly composed of a plurality of (three in this embodiment) abatement units (12) and an output loss scrubber (14). Yes.

[0026] The abatement unit (12) is an apparatus for thermally decomposing exhaust gas (F) containing PFCs, etc., from which semiconductor manufacturing equipment (16) is also exhausted. As shown in FIG. Plasma jet torch (1 8) A plasma abatement machine composed of a power supply unit (20), a working gas supply unit (22), and a reaction tube (24).

[0027] The plasma jet torch (18) generates a high-temperature plasma jet (P), and has a short cylindrical torch body (18a) that is open on both upper and lower surfaces due to a metal material force such as brass. An anode (18b) is connected to the tip of the torch body (18a), and a rod-shaped force sword (18c) is attached to the inside of the torch body (18a).

[0028] The anode (18b) is a cylindrical nozzle made of a refractory metal having high conductivity such as copper or tungsten and having a plasma generation chamber (18d) recessed therein. A plasma jet ejection hole (18e) through which the plasma jet (P) generated in the plasma generation chamber (18d) is ejected is formed in the center of the lower surface of the anode (18b). The upper part is provided with a working gas supply port (18D.

[0029] The force sword (18c) also has a main body made of a high melting point metal having high conductivity such as copper and a tungsten force mixed with trimium or lanthanum, and has an outer diameter toward the tip. This is a rod-shaped member composed of a spindle-shaped distal end portion. The tip of the force sword (18c) is disposed in a plasma generation chamber (18d) recessed in the anode (18b).

[0030] It should be noted that between the anode (18b) and the force sword (18c), there is no conduction (short circuit) between them via the torch body (18a), so that the tetrafluorinated styrene resin is ceramic. Insulating material (not shown) is inserted. A cooling water passage (not shown) is provided inside the anode (18b) and the force sword (18c), and these members are cooled.

[0031] Then, a predetermined discharge voltage is applied to the anode (18b) and the force sword (18c) configured as described above, and an arc is generated between the anode (18b) and the force sword (18c). The resulting power unit (20) is connected.

[0032] The power supply unit (20) applies a predetermined discharge voltage to the anode (18b) and the force sword (18c) described above to generate a plasma arc. The power supply unit (20) includes a so-called switch. It is preferable to use a DC power supply device of a ching method.

[0033] Here, in the abatement device (10) of the present embodiment, as shown in Fig. 1, the same number of power supply units (20) as the abatement unit (12) that is always operated are equipped. The power supply unit (20) is connected to the abatement unit (12) through the switch (26). Therefore, operate this switch (26). By doing so, the abatement unit (12) for supplying power can be switched.

[0034] As shown in Fig. 3, the working gas feed unit (22) feeds a working gas (G) such as nitrogen, hydrogen or argon into the plasma generation chamber (18d) of the anode (18b). A regulator (22a) that depressurizes the high-pressure working gas (G) stored in a cylinder or the like (not shown), and a working gas feed provided in the regulator (22a) and the anode (18b). And a working gas feed pipe (22b) communicating with 18D. The working gas feed pipe (22b) has an amount of working gas (G) fed into the plasma generation chamber (18d). A flow rate control means (28) is attached to control.

[0035] The reaction cylinder (24) is a straight pipe-type member having both ends that are refractory material strength such as castable, and one end (the upper end in FIG. 3) is connected to the plasma jet torch (30) via the exhaust gas supplier (30). 18) Connected to the end of the plasma jet injection hole (18e) side, which surrounds the plasma jet (P) and the exhaust gas (F), and thermally decomposes the exhaust gas (F) in its internal space It is. Here, the exhaust gas supply device (30) is a member that blows the exhaust gas (F) in a spiral shape and supplies it to the vicinity of the upstream side of the plasma jet (P).

[0036] The other end of the reaction tube (24) serves as a discharge end of the exhaust gas (F) decomposed in the reaction tube (24). As shown in FIG. It is connected to a water tank (34) that stores chemicals and water through a swirling shower (32) that allows the dust in the exhaust gas (F) to flow down while swirling and flushing so that dust in the exhaust gas (F) does not adhere to the tube. Here, the water tank (34) has three partition walls (34a) that are installed in the water so that the upper end is attached to the ceiling surface inside the water tank (34) and the lower end is separated from the bottom force of the water tank (34). ) Is provided. By providing a powerful partition wall (34a), the space in the water tank (34) is isolated from each other, communicating with the internal space of the three reaction tubes (24) and the internal space of one outlet scrubber (14), respectively. It is divided into four spaces (34b). Of these four spaces (34b), each of the three spaces (34b) communicating with the internal space of the reaction tube (24) has an individual outlet pipe having an outlet valve (35) for opening and closing the flow path. One end of (37) is connected, and the other end of the individual outlet pipe (37) is connected to the space (34b) communicating with the internal space of the outlet scrubber (14). That is, the treated exhaust gas (F) from which the reaction cylinder (24) force is also discharged is individually supplied to the outlet scrubber (14) through the individual outlet pipe (37). Note that the individual outlet pipe (37) is cleaned and cooled toward the outlet valve (35). A spray means (not shown) for injecting reject water is attached.

[0037] In the reaction cylinder (24) surrounding the plasma jet (P) and the exhaust gas (F), a high temperature region heated by the high temperature plasma jet (P) is formed in the internal space. For this reason, of the exhaust gas (F) flowing down the reactor tube (24), the undecomposed exhaust gas (F) that does not directly contact the plasma jet (P) is also thermally decomposed when passing through this high temperature region. It will be.

[0038] Although not shown, the reaction cylinder (24) is provided with a sensor for sensing at least one of temperature, pressure, and plasma jet (P) ignition state in the reaction cylinder (24), Using the information sensed by this sensor, the opening and closing of the inlet valve (40) described later is automatically controlled.

[0039] In the abatement device (10) of the present embodiment, three abatement units (12) as described above are installed in parallel on the water tank (34) [that is, a plurality of reaction tubes (24) are close to each other] (see Figures 1 and 2), the exhaust pipe (30) of each abatement unit (12) is connected to the main pipe (36) through which exhaust gas (F) flows. A plurality of (three in the present example) individual inlet pipes (38) branched from each other are connected to each other. Here, each individual inlet pipe (38) is provided with an inlet valve (40). By opening and closing the powerful inlet valve (40), exhaust gas supply to the abatement unit (12) and Stop is controlled. In other words, by providing such an inlet valve (40) in the individual inlet pipe (38), it is possible to control the flow of exhaust gas (F) in the individual inlet pipe (38).

[0040] In addition, one end of a bypass pipe (42) is connected to the main pipe (36) via a normally closed valve (42a), and the other end of the binose pipe (42) is connected to an output loss scrubber to be described later. It is connected to the inlet side of (14).

[0041] The outer periphery of the plurality of reaction tubes (24) arranged in parallel on the water tank (34) is surrounded by a heat insulating material (H) made of a material such as rock wool or calcium silicate.

In this embodiment, as shown in FIG. 1, four semiconductor manufacturing apparatuses (16) are connected to the main pipe (36) via valves (44), respectively. The number of semiconductor manufacturing equipment (16) connected to the harmful equipment (10) is not limited to this.

[0043] In addition, the exhaust gas (F) from which the semiconductor manufacturing equipment (16) is also discharged is collected in the main pipe (36).

After that, an example of distribution to the individual inlet pipe (38) is shown. The individual inlet pipes (38) may be connected to each other while being directly connected to the conductor manufacturing apparatus (16). That is, each of the plurality of abatement units (12) is connected to the semiconductor manufacturing apparatus (16) via the individual inlet pipe (38), and the exhaust gas (F) flow control in each individual inlet pipe (38). However, the piping structure may be anything as long as it is possible.

[0044] The output loss scrubber (14) washes the exhaust gas (F) pyrolyzed by the abatement unit (12) with water to remove dust and water-soluble components and cleans it. This is intended to cool the exhaust gas (F), and it faces the straight pipe type scrubber body (48) with the exhaust gas inlet (46) at the lower end in the flow direction of the exhaust gas (F). It consists of a downward spray nozzle (50) that ejects chemicals and water!

[0045] The outlet scrubber (14) is also erected on the water tank (34) in the same manner as the abatement unit (12), and the spray nozzle (50) force sprayed chemical liquid or water is used in the water tank (34). Is sent to. An exhaust fan that discharges the treated exhaust gas (F) into the atmosphere via a breather (52) for introducing the atmosphere into the exhaust gas (F) is provided at the top outlet of the output loss scrubber (14). 54) is connected.

When removing the exhaust gas (F) using the abatement apparatus (10) of the present embodiment configured as described above, first, the abatement apparatus (10) (not shown) is turned on. In the example shown in Fig. 1, the flow control of the right and left end abatement units (12) of the three abatement units (12) installed in parallel The means (28) is operated to feed the working gas (G) into the plasma generation chamber (18d).

[0047] Subsequently, the abatement unit (12) that is operated by switching the switch (26) is connected to the power supply unit (20), the power supply unit (20) is operated, and the plasma of the abatement unit (12) is operated. With the jet ignition switch (not shown) turned on, a voltage is applied between the electrodes (18b) and (18c) of the plasma jet torch (18), and the plasma jet outlet (18e) force also ejects the plasma jet (P). Let

[0048] Then, when the temperature force S in the reaction cylinder (24) reaches a predetermined temperature at which the exhaust gas (F) can be detoxified, the inlet valve (40) of the individual inlet pipe (38) [example shown in FIG. In this case, among the three abatement units (12) installed in parallel, the inlet valves (40) respectively provided in the individual inlet pipes (38) connected to the right and left abatement units (12). )] Is opened, and exhaust gas (F) is supplied into the reaction tube (24). Then, the exhaust gas (F) supplied into the reaction cylinder (24) via the exhaust gas supply device (30) flows down in a spiral shape so as to surround the plasma jet (P) and is heated in the reaction cylinder (24). Disassembled It is.

[0049] As described above, the exhaust gas (F) pyrolyzed by the abatement unit (12) is guided to the exhaust gas inlet (46) of the output loss scrubber (14) via the individual outlet pipe (37). After being washed and cooled by the output loss scrubber (14), it is discharged into the atmosphere through the exhaust fan (54).

[0050] According to the abatement apparatus (10) of the present embodiment, the plurality of abatement units (12) are provided via the individual inlet pipe (38) provided with the inlet valve (40) for opening and closing the flow path. Since it is connected to the manufacturing equipment (16), the abatement unit (12) used by opening and closing the inlet valve (40) according to the flow rate of the exhaust gas (F) discharged from the semiconductor manufacturing equipment (16). The number of can be increased or decreased. In other words, when the maximum exhaust gas treatment capacity of the abatement unit (12) is 100 liters Z, it is possible to treat exhaust gas (F) of 200 liters Z by operating two such abatement units in parallel. Become. It is also possible to stop some of the multiple abatement units (12) for backup.

[0051] Close the inlet valve (40) and close the outlet valve (35) provided in the individual outlet pipe (37) communicating with the discharge side end of the reaction tube (24). This allows the abatement unit (12) to be completely decoupled from the exhaust gas (F) treatment flow and is most damaged by the operation of the abatement unit (10) (i.e. requires the most maintenance). ) Maintenance of the abatement unit (12) can be performed without stopping the operation of the abatement device (10). As a result, the abatement device (10) can be operated continuously for a long time.

[0052] Since a plasma abatement machine equipped with a non-migration type plasma jet torch (18) is used as the abatement unit (12), the thermal decomposition of CF naturally occurs in the semiconductor manufacturing process.

Four

Exhaust gas (F) can be reliably pyrolyzed with low energy consumption.

[0053] Further, since the abatement device (10) is configured by a plurality of abatement units (12), a plurality of abatement devices configured by a single abatement unit (12) are installed. Compared to the case, the abatement device (10) can be made compact and excellent in space saving.

[0054] Then, at least one of temperature, pressure, and plasma jet (P) ignition state in the reaction cylinder (24) is sensed, and the inlet valve (40) is automatically controlled based on the sensed information. Therefore, if any trouble is detected in the abatement unit (12) (specifically, the temperature in the reaction tube (24) suddenly decreases or the pressure in the reaction tube (24) Sudden change Or if the plasma jet (P) misfires), the exhaust gas treatment in the abatement unit (12) where trouble has occurred is immediately interrupted, and the treatment of the exhaust gas (F) is stopped by other abatement units. (12) can be switched automatically. For this reason, it is possible to prevent the exhaust gas (F) removal processing capability from being lowered, and to reduce the operation management burden of the removal device (10).

[0055] In the above-described embodiment, the case where three abatement units (12) are provided is shown. However, the abatement device (10) may be equipped with a plurality of abatement units (12). For example, it may be 2 or 4 or more.

[0056] Further, in the above-described example, the power supply unit to be installed is shown in the case where two power supply units (20) are provided to the three abatement units (12) via the switch (26) ( The number of 20) should be less than the number of abatement units (12), not limited to this, especially the minimum number that can guarantee the target exhaust gas treatment capacity. In this way, the abatement device (10) can be made even more compact.

[0057] Although a plurality of abatement units (12) and output loss scrubbers (14) are arranged in parallel (see Figs. 1 and 2), the abatement unit (12) and output loss scrubber (14) However, if a plurality of abatement units (12) are arranged so as to be close to each other, the arrangement of the abatement device is appropriately limited according to the situation of the space where the abatement device (10) is installed. The design can be changed. However, the use of space can be improved by arranging the abatement units (12) in parallel as in this embodiment.

In the above-described embodiment, the exhaust gas (F) passing through the reaction cylinder (24) is efficiently thermally decomposed by integrally surrounding the plurality of reaction cylinders (24) with the heat insulating material (H). Although an example is shown, depending on the type of exhaust gas (F) to be removed, each reaction tube (24) may be separately surrounded by a heat insulating material (H). It is not necessary to provide a heat insulating material (H).

[0059] Further, in the above-described embodiment, the case where the removal loss scrubber (14) is provided in the abatement apparatus (10) is shown. 1S For example, a separate exhaust gas treatment process is provided in the post-process, and the abatement apparatus (10 ) May only omit PFCs, the output loss scrubber (14) may be omitted as shown in Fig. 4.

[0060] If necessary, the exhaust gas (F) is removed from the wet scrubber before being introduced into the abatement unit (12). You can wash it with a bath!

Claims

The scope of the claims

[1] A plasma jet torch and a plasma jet torch that is provided on the plasma jet ejection side of the plasma jet torch, surrounds the plasma jet and the exhaust gas supplied to the plasma jet, and thermally decomposes the exhaust gas inside the plasma jet torch A plurality of abatement units connected to the semiconductor manufacturing apparatus via individual inlet pipes configured with reaction tubes and provided with inlet valves for opening and closing the flow paths; and

An exhaust gas abatement apparatus for semiconductor manufacturing exhaust gas, comprising an individual outlet pipe provided with an outlet valve for opening and closing a flow path and communicating with a discharge side end portion of each reaction cylinder.

[2] It is characterized in that at least one of temperature, pressure and plasma jet ignition state in the reaction cylinder is sensed and the inlet valve is automatically controlled based on sensed information. The semiconductor manufacturing exhaust gas abatement apparatus according to claim 1.

[3] The number of the abatement units is three or more, and the abatement unit sandwiched between two adjacent abatement units is always stopped for backup purposes. Item 2. A semiconductor production exhaust gas abatement apparatus according to item 2.

[4] A maximum of n—1 power supply units (where n is an integer of 3 or more) power supply units for the above-mentioned n abatement units (where n is an integer of 3 or more), and the removal unit is connected via a switch. 4. The semiconductor manufacturing exhaust gas abatement apparatus according to any one of claims 1 to 3, wherein the power supply unit connected to the harm unit is switched.

[5] Provided with an output loss scrubber for collecting and cleaning and cooling the exhaust gas decomposed by the detoxification unit, and normally closing the exhaust gas before decomposition by the detoxification unit to the inlet side of the output loss scrubber The semiconductor manufacturing exhaust gas abatement apparatus according to any one of claims 1 to 4, wherein a bypass piping is provided.