JP2006302925A - Semiconductor device, optical device, and sensor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that can reduce the contact resistance between the source and the drain electrodes and an organic semiconductor material layer by a simple manufacturing process, and to provide an optical device and a sensor device. <P>SOLUTION: An organic field effect transistor has the source electrode 5, the drain electrode 6, and the organic semiconductor material layer 7 provided at least between these electrodes; and moves charge between the source and drain electrodes 5, 6 via the organic semiconductor material layer 7. In the organic field effect transistor 1a, the source and drain electrodes 5, 6 are made of a mixture of a conductive polymeric material and charge transfer complex. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor device, an optical device, and a sensor device suitable for, for example, a field effect transistor.

  In a conventional field effect transistor (FET), an inorganic semiconductor material such as Si is used as a semiconductor material layer constituting a channel region, but a thin film transistor using such an inorganic semiconductor material is used. In the manufacturing process, a high-temperature process of 400 ° C. or higher is required. Therefore, it is extremely difficult to manufacture a thin film transistor using an inorganic semiconductor material on a soft support (substrate) that is soft and difficult to break, such as plastic.

  On the other hand, an organic field effect transistor having a channel region made of an organic semiconductor material can be manufactured at a temperature lower than the heat resistance temperature of plastics. Moreover, since it can be manufactured based on the material which can be apply | coated, it is anticipated as a semiconductor element suitable for formation of low cost and a large area.

  By the way, in the conventional organic field effect transistor, in order to form a good ohmic contact with the organic semiconductor material layer, the source electrode and the drain electrode are made of metal materials such as gold (Au), platinum (Pt), and palladium (Pd). It is composed of

  Here, in order to improve the characteristics (mobility, on / off ratio, etc.) of the organic field effect transistor, it is necessary to reduce the contact resistance between the semiconductor and the source and drain electrodes.

  For example, in order to modify the interface between the source and drain electrodes and the semiconductor material layer, an example of using a deposited film of a charge transfer complex such as TCNQ (tetracyanoquinodimethane) on the surface of each electrode (non-described later) (See Patent Document 1).

  In addition, when gold (Au) is used for the metal of the source electrode and the drain electrode, an example of interface modification with 4-nitrobenzenethiol, which is a self-assembled acceptor material (SAM) having a thiol group (non-described later) (See Patent Document 2).

Ref.R.hajlaoui et al, Adv. Mater. 9, 389 (1997) Ref. D. J. Gundlach et al. IEEE Electron Device Lett. 12,571 (2001)

  As these problems, for example, modification of the interface using a thiol group requires a specific source electrode and drain electrode that interact with the thiol group, such as Au.

  In addition, in order to modify the interface using a charge transfer complex such as tetracyanoquinodimethane, it is necessary to form a film of dopant molecules firmly on the inorganic electrode, so a vacuum deposition method is required.

  In these cases, a dopant molecular layer is inevitably required between the source and drain electrodes and the semiconductor material layer. Therefore, conduction through these molecular layers is performed, and the contact resistance is not necessarily reduced. This is not a preferable structure.

  Further, since the inorganic electrode constituting the conventional field effect transistor is formed by a physical film forming method such as a vacuum evaporation method or a sputtering method, it is not suitable for simplification of the process.

  The present invention has been made in view of such a situation, and an object of the present invention is to reduce the contact resistance between the electrode and the organic semiconductor material layer, which can be realized by a simple manufacturing process. An apparatus, an optical device, and a sensor device are provided.

  That is, the present invention includes a first electrode, a second electrode, and an organic semiconductor material layer provided at least between these electrodes, and the first electrode and the second electrode are interposed through the organic semiconductor material layer. In a semiconductor device configured to move charges between electrodes, the first electrode and the second electrode are made of a mixture of a conductive polymer material and a dopant for controlling conductivity type. It is related.

  The present invention also includes a first electrode, a second electrode, and an organic semiconductor material layer provided at least between these electrodes, and the first electrode and the second electrode via the organic semiconductor material layer. In the semiconductor device configured to move the charge between the first electrode and the second electrode, the first electrode and the second electrode include a conductive layer, and at least the organic semiconductor material layer side between the two electrodes of the conductive layer. The present invention relates to a semiconductor device which is formed by a conductive coating layer to be coated, and the conductive coating layer is made of a mixture of a conductive polymer material and a charge transfer complex.

  According to the present invention, since the first electrode and the second electrode are made of a mixture of a conductive polymer material and a dopant for controlling the conductivity type, not only in the first electrode and the second electrode, The ohmic contact (reduction of contact resistance) with the organic semiconductor material layer facilitates the movement of electric charges between the first electrode and the second electrode through the organic semiconductor material layer, and the mixture is used. When forming the first electrode and the second electrode, it is also possible to easily produce these electrodes by a simple method such as lift-off or coating other than the vacuum evaporation method or the sputtering method.

  The first electrode and the second electrode are formed of a conductive layer and a conductive coating layer that covers at least the organic semiconductor material layer side between the two electrodes of the conductive layer. Since the layer is composed of a mixture of a conductive polymer material and a charge transfer complex, the charge between both electrodes is reduced by ohmic contact (reduction of contact resistance) of the first electrode and the second electrode to the organic semiconductor material layer. This contact can be realized by a simple method such as lift-off or coating.

  In the present invention, in order to facilitate the movement of charges between the first and second electrodes and the organic semiconductor material layer, the conductivity type of the organic semiconductor material layer, the dopant or the charge transfer complex It is desirable that the conductivity type is the same. Note that the first electrode is, for example, a source electrode, and the second electrode is, for example, a drain electrode.

In addition, in order to increase the conductivity in the first and second electrodes, the conductive polymer material forming the first and second electrodes is:
Polythiophene, polypyrrole, polyaniline, polyacetylene, polyphenylene, polyfuran, polyselenophene, polyisothianaphthene, polyphenylene sulfide, polyphenylene vinylene, polychenylene vinylene, polynaphthalene, polyanthracene, polypyrene, polyazulene, phthalocyanine, pentacene, merocyanine and polyethylene At least one organic polymer material selected from the group consisting of dioxythiophenes;
Iodine, perchloric acid, hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, tetrafluoroboric acid, arsenic pentafluoride, hexafluorophosphoric acid, alkylsulfonic acid, perfluoroalkylsulfonic acid, polyacrylic acid, polystyrenesulfonic acid and Desirably, it consists of a mixture of at least one selected from the group consisting of dodecylbenzenesulfonic acid.

  Further, the dopant or the charge transfer complex, which is a material that causes charge transfer to the semiconductor, is composed of at least one selected from the group consisting of tetracyanoquinodimethane, tetracyanoethylene, and tetracyanotetrafluoroquinodimethane. It is desirable that it is an acceptor molecule or a donor molecule composed of at least one selected from the group consisting of tetrathiafulvalene, perylene and methylenedithiotetraselenafulvalene.

The organic semiconductor material having the same conductivity type as the dopant or charge transfer complex constituting the first and second electrodes is a p-type composed of at least one selected from the group consisting of copper phthalocyanine, poly-3-hexylthiophene and pentacene. or a semiconductor material, or a perylene derivative, is preferably a n-type semiconductor material comprising at least one member selected from C ₆₀ and the group consisting of carbon nanotubes.

  Further, in order to facilitate the movement of charges between the first electrode and the second electrode and the organic semiconductor material layer, at least the organic between the first electrode and the second electrode between the two electrodes. It is desirable that the semiconductor material layer side be formed of the mixture.

  Further, metal particles such as Au having the dopant or the charge transfer complex attached to the surface thereof may be mixed in the conductive polymer material.

  The semiconductor device includes an organic electric field including a gate electrode, a gate insulating film, the first electrode as a source electrode, the second electrode as a drain electrode, and the organic semiconductor material layer as a channel region. It may be configured as an effect transistor.

  The conductive layer constituting the first and second electrodes is preferably formed of at least one selected from the group consisting of gold, copper, silver, aluminum, platinum and palladium.

  The present invention also provides an optical device comprising the semiconductor device of the present invention as a drive element, for example, an electroluminescent device, a liquid crystal display device, or a solar cell, and a sensor device constituted by this semiconductor device is also provided. It is to provide.

  Next, a preferred embodiment of the present invention will be described in detail with reference to the drawings.

First Embodiment FIGS. 1 to 7 show a first embodiment of the present invention.

  FIG. 1 shows an organic field effect transistor 1a having a bottom contact type bottom gate structure according to the present embodiment.

  That is, a gate electrode 4 is formed on the substrate 2, and a source electrode made of a mixture of a conductive polymer material and a charge transfer complex (a dopant for controlling the conductivity type) is formed on the gate insulating film 3 on the gate electrode 4. 5 (first electrode) and drain electrode 6 (second electrode) are formed, and an organic semiconductor material layer 7 (channel region 8) is formed so as to cover the surface including the source electrode 5 and drain electrode 6. . The conductivity type of the organic semiconductor material layer 7 and the conductivity type of the charge transfer complex (dopant) are the same.

  Here, what is important is that the source electrode 5 and the drain electrode 6 are made of a mixture of a conductive polymer material such as polythiophene and a charge transfer complex such as tetracyanoquinodimethane as a dopant for controlling the conductivity type. That is. Accordingly, a solution in which the charge transfer complex is dissolved or dispersed in a specific solvent (for example, the same solvent as the conductive polymer material or a soluble solvent) is prepared, and this solution is prepared as a solution of the conductive polymer material. (Or dispersion) to prepare a solution (or dispersion) in which a charge transfer complex is added to a conductive polymer material, and using this, each electrode 5 and 6 is predetermined by a simple method described later. Can be formed into a pattern.

  In this case, metal particles to which a charge transfer complex is attached in advance may be mixed with a solution (or dispersion) of a conductive polymer material. For example, gold nanoparticles having 4-benzenethiol or the like attached thereto may be mixed.

  Here, the mixing ratio between the conductive polymer material and the charge transfer complex is preferably determined in consideration of conductivity and film formability.

  The manufacturing process of the organic field effect transistor 1a will be described with reference to FIG.

  A gate electrode 4 made of a conductive polymer material is formed in a predetermined pattern on a substrate 2 made of, for example, glass shown in FIG. 2A by, for example, a lithography method and a lift-off method, as shown in FIG. 2B. To do.

  Here, as the substrate 2, not only a glass substrate but also a nonconductive material such as a sapphire substrate or a plastic film can be used.

  The patterning of the gate electrode 4 can be performed by a printing method such as a lithography method, a lift-off method, an etching method, a stamp method, and a printing method. In addition, the gate electrode 4 is made of, for example, PEDOT / PSS, that is, poly [3,4- (ethylenedioxy) thiophene] / poly (styrenesulfonic acid). ) Or a conductive polymer material such as polyaniline, but may be formed of metal.

  Next, as shown in FIG. 2C, a gate insulating film 3 made of, for example, polyvinylphenol (PVP) is formed by spin coating.

The insulating material is not limited to PVP, and any insulating organic material such as polyvinyl alcohol or polymethyl methacrylate, or an insulating inorganic material such as SiO ₂ , SiN, or Al ₂ O ₃ can be applied. The gate insulating film 3 may be formed by a spin coating method, a printing method such as a stamp method or a printing method, a vacuum deposition method, a sputtering method, a CVD (chemical vapor deposition) method, or the like.

  Next, as shown in FIG. 2D, for example, a dopant for controlling the conductivity type is tetracyanoquinodimethane (TCNQ) dissolved in ethylene glycol in a solution of PEDOT / PSS which is a conductive polymer material. By mixing as a (charge transfer complex) and using this conductive polymer solution, the source electrode 5 and the drain electrode 6 are formed in a predetermined pattern by, for example, a lithography method or a lift-off method. This patterning can also be performed by a printing method such as an etching method, a stamp method, or a printing method.

  The conductive polymer material is not limited to PEDOT / PSS, and may be polyaniline, polypyrrole, or the like as long as it is prepared by mixing the above-described conductive polymer material and dopant. Further, tetracyanoquinodimethane used as a dopant is an acceptor type molecule and can reduce the contact resistance with the p-type organic semiconductor material layer 7. That is, when the p-type is used as the organic semiconductor material layer 7, an acceptor-type dopant is used, and when an n-type is used, a donor-type dopant is used.

  Next, as shown in FIG. 1, a spin coating method, a stamping method, a printing method such as a printing method, a vacuum deposition method, a sputtering method, The organic semiconductor material layer 7 is formed by a CVD method or the like. For example, poly 3 hexylthiophene (P3HT) is formed by spin coating. The organic semiconductor material is not limited to a high molecular material such as P3HT, but may be a low molecular material such as pentacene, anthracene, and phthalocyanine.

  Through these steps, the manufacturing process of the organic field effect transistor 1a having the bottom contact type bottom gate structure is completed.

  A method for forming the source electrode 5 and the drain electrode 6 will be described in detail with reference to FIG. Examples of this method include a lift-off method, a lithography method, and an etching method.

  FIG. 3A shows a lift-off method, in which a photoresist 9 is formed in a predetermined pattern on the gate insulating film 3 other than the positions where the source electrode 5 and the drain electrode 6 are formed by a conventional method (hereinafter the same). Then, an electrode material 10 (the above-described conductive polymer solution) is applied on the photoresist 9 and the gate insulating film 3. Thereafter, the source electrode 5 and the drain electrode 6 can be formed in a predetermined pattern by dissolving the photoresist 9 and removing (lifting off) the electrode material 10 on the photoresist 9 from the gate insulating film 3. .

  In the lithography method shown in FIG. 3B, an electrode material 10 is applied on the gate insulating film 3, and a photoresist 9 is formed in a predetermined pattern on the electrode material 10 other than the position where the source electrode 5 and the drain electrode 6 are formed. To do. Thereafter, for example, the exposed electrode material 10 is irradiated with light, and then the photoresist 9 and the electrode material 10 under the photoresist 9 are dissolved and removed, whereby the source electrode 5 and the drain electrode 6 are formed into a predetermined pattern. Can be formed.

  In the etching method shown in FIG. 3C, the electrode material 10 is applied to the entire surface of the gate insulating film 3, and the photoresist 9 is formed in a predetermined pattern on the electrode material 10 where the source electrode 5 and the drain electrode 6 are to be formed. By forming and using this as a mask, the exposed electrode material 10 is dissolved and removed, whereby the source electrode 5 and the drain electrode 6 can be formed in a predetermined pattern.

  FIG. 4 shows the structure of another organic field effect transistor 1b, which is a modification of the organic field effect transistor 1a having the bottom contact type bottom gate structure shown in FIG.

  In this structure, the source electrode 5 and the drain electrode 6 are formed by joining a mixture layer 12 formed in the same manner as described above using the conductive polymer solution and a metal layer 11 such as Au. The structure is the same as that of the organic field effect transistor 1a shown in FIG. 1 except that the conductive polymer mixture layer 12 is disposed on the channel region 8 side on the gate electrode 4.

  FIG. 5 shows the structure of an organic field effect transistor 1c having a top contact type bottom gate structure. This is because the organic semiconductor material layer 7 is formed on the gate insulating film 3 and the source electrode 5 and the organic semiconductor material layer 7 on the organic semiconductor material layer 7 as compared with the organic field effect transistor 1a having the bottom contact type bottom gate structure shown in FIG. The difference is that the drain electrode 6 is formed.

  FIG. 6 shows a structure of an organic field effect transistor 1d having a bottom contact type top gate structure. This is because the source electrode 5 and the drain electrode 6 are formed on the substrate 2 and the organic material is formed on the source electrode 5 and the drain electrode 6 as compared with the organic field effect transistor 1a having the bottom contact type bottom gate structure shown in FIG. The semiconductor material layer 7 is formed, the gate insulating film 3 is formed on the organic semiconductor material layer 7, and the gate electrode 4 is formed on the gate insulating film 3.

  FIG. 7 shows the structure of an organic field effect transistor 1e having a top contact type top gate structure. This is because the organic semiconductor material layer 7 is formed on the substrate 2 and the source electrode 5 and the drain electrode are formed on the organic semiconductor material layer 7 as compared with the organic field effect transistor 1a having the bottom contact type bottom gate structure shown in FIG. 6, the gate insulating film 3 is formed on the organic semiconductor material layer 7, the source electrode 5 and the drain electrode 6, and the gate electrode 4 is formed on the gate insulating film 3.

  According to the present embodiment, the source electrode 5 and the drain electrode 6 are formed by applying and patterning a mixed liquid of the above-described conductive polymer material and a charge transfer complex (dopant). The contact resistance between the electrode 6 and the organic semiconductor material layer 7 can be reduced, the amount of charge movement (current) between the two electrodes can be increased, and the conductivity of each electrode is improved. Moreover, since these ohmic electrodes are formed by applying and patterning the conductive polymer mixture 10, vacuum processes such as vacuum deposition and sputtering can be omitted, and the ohmic electrodes can be formed by a simple process.

Second Embodiment FIGS. 8 to 12 show a second embodiment of the present invention.

  FIG. 8 shows an organic field effect transistor 1f having a bottom contact type bottom gate structure according to the present embodiment.

  That is, the source electrode 5 and the drain electrode 6 have metal layers 5a and 6a such as Au as main electrodes, and these main electrodes are composed of a mixture of the above-described conductive polymer material and a charge transfer complex. It is the same as that of the above-mentioned 1st Embodiment except having been coat | covered with the layer 12 (electroconductive coating layer), and having surface-modified.

  The metal layers 5a and 6a constituting the source electrode 5 and the drain electrode 6 are formed of at least one selected from the group consisting of gold, copper, silver, aluminum, platinum, and palladium.

  With reference to FIG. 9, a manufacturing process of the organic field effect transistor 1f will be described.

  First, similarly to the steps shown in FIGS. 2A to 2C, the conductive polymer gate electrode 4 is formed on the substrate 2, and the gate insulating film 3 is further formed thereon.

  Next, as shown in FIG. 9A, a source electrode 5 and a drain electrode 6 of, for example, gold (Au) are formed in a predetermined pattern on the gate insulating film 3 by a lithography method and a lift-off method. This patterning is not limited to the lithography technique, and may be performed by an etching method, a stamp method, or a printing method. The metal layers 5a and 6a are not limited to gold but may be made of metal such as aluminum (Al) or chromium (Cr). Instead, conductive polymer materials such as PEDOT / PSS and polyaniline are used. May be formed.

  Next, as shown in FIG. 9B, a photoresist 9 is formed in a predetermined pattern so that the portions other than the bottom surfaces of the metal layers 5a and 6a are exposed.

  Note that this process can be omitted when the conductive polymer mixture layer 12 containing the dopant is formed by a patterning method that does not require a resist, such as a stamp method or a printing method, instead of the lift-off method. .

  Next, as shown in FIG. 9 (c), for example, a conductive polymer obtained by mixing PEDOT / PSS with a dopant for controlling conductivity type composed of tetracyanoquinodimethane (TCNQ) dissolved in ethylene glycol. Apply the solution to the entire surface.

  Next, as shown in FIG. 9D, the photoresist 9 is dissolved and removed (lifted off) from the gate insulating film 3 so that the exposed surfaces other than the bottom surfaces of the metal layers 5a and 6a are exposed to the conductive polymer mixture. A source electrode 5 and a drain electrode 6 covered with the layer 12 are formed.

  Next, as shown in FIG. 8, the organic semiconductor material layer 7 is formed on the gate insulating film 3 and the conductive polymer mixture layer 12, and the manufacturing process of the organic field effect transistor 1f is completed.

  10, 11, and 12 show the structures of different organic field effect transistors 1 g, 1 h, and 1 i, respectively. FIG. 8 shows that these have the structures shown in FIGS. 5 to 7. Different from the organic field effect transistor 1c.

  According to the present embodiment, the metal layers 5a and 6a are provided as the main electrodes of the source electrode 5 and the drain electrode 6, and these are coated with the conductive polymer mixture layer 12 mixed with the dopant, whereby the source electrode 5 and the drain electrode are formed. The contact resistance between the electrode 6 and the organic semiconductor material layer 7 can be reduced. Unlike the conventional structure in which the electrode surface is modified only by the charge transfer complex, the conductive polymer layer containing the charge transfer complex can be easily coated by the lift-off method without being restricted by the electrode material. Can do.

  In addition, in the present embodiment, the same operations and effects as described in the first embodiment described above can be obtained.

Third Embodiment FIGS. 13 to 14 show a third embodiment of the present invention.

  FIG. 13 shows an organic field effect transistor 1j having a bottom contact type bottom gate structure according to the present embodiment.

  According to this transistor, on the channel region side of the source electrode 5 and drain electrode 6 and the organic semiconductor material layer 7, the conductive polymer mixture layer 12 ( The second embodiment is the same as the second embodiment except that the conductive coating layer is coated.

  With reference to FIG. 14, the manufacturing process of the organic field effect transistor 1j will be described.

  First, the conductive polymer gate electrode 4 is formed on the substrate 2, and the gate insulating film 3 is further formed thereon, in the same manner as the manufacturing steps shown in FIGS. 2 (a) to 2 (c).

  Next, as shown in FIG. 14A, main electrodes 5 a and 6 a for a source electrode and a drain electrode are formed on the gate insulating film 3.

  Next, as shown in FIG. 14B, a photoresist 9 is formed in a predetermined pattern so that a part of the side surface and the upper surface on the channel region side of the main electrodes 5a and 6a is exposed.

  Next, as shown in FIG. 14C, a conductive polymer mixture 12a is applied to the entire surface.

  Next, as shown in FIG. 14D, the conductive polymer mixture layer 12 is formed on the side surface and part of the upper surface on the channel region side by dissolving and removing (lifting off) the photoresist 9 from the gate insulating film 3. A source electrode 5 and a drain electrode 6 covered with are formed.

  Next, as shown in FIG. 13, an organic semiconductor material layer 7 is formed on the gate insulating film 3, the source electrode 5, the drain electrode 6, and the conductive polymer mixture layer 12 to form an organic field effect transistor. The manufacturing process of 1j is completed.

  According to the present embodiment, even if the formation region of the conductive polymer mixture layer 12 is localized on the channel region side, the contact resistance between the source electrode 5 and the drain electrode 6 and the organic semiconductor material layer 7 is reduced. be able to.

  In addition, in this embodiment, the same operations and effects as described in the first and second embodiments described above can be obtained.

Fourth Embodiment Figure 15 embodiment of the shows a fourth embodiment of the present invention.

  The present embodiment relates to a liquid crystal display device 25 in which the organic field effect transistor 1a having the bottom contact type bottom gate structure shown in FIG. 1 is incorporated as a drive element.

  That is, an anode (transparent) electrode is connected to the drain electrode 6 of the transistor 1a fabricated on the common substrate 2 and extended to the pixel portion. On the anode electrode 24, a hole transport layer 23, a light emitting layer 22, The electron transport layer 21 and the cathode electrode 20 are sequentially laminated, and the whole is covered with the insulating film 16, thereby configuring the liquid crystal display device 25.

  When the liquid crystal display device 25 is driven, the anode voltage supplied from the transistor 1a causes the holes from the hole transport layer 23 and the electrons from the electron transport layer 21 to recombine in the light emitting layer 22, and the anode electrode 24 side. Light is emitted toward the substrate 2 and extracted from the substrate 2 side. In this case, in order to transmit emitted light from the substrate 2 side, the hole transport layer 23, the anode electrode 24, the gate insulating film 3 and the substrate 2 are made of a transparent material. Light can also be derived from the side.

Fifth Embodiment FIG. 16 shows a fifth embodiment of the present invention.

  In the present embodiment, the present invention is applied to a sensor, for example, an optical sensor 15. However, in this sensor 15, the gate insulating film 3 and the gate electrode 4 described above may be omitted. Instead, the second embodiment is the same as the first embodiment except that the insulating film 16 is provided.

To drive the sensor 15, the agent 30 acting on the organic semiconductor material layer 7 from the outside (e.g. light), the electric resistance of the organic semiconductor material layer 7 between the electrodes 5 and 6 is changed, the terminal T ₁ The amount of light and the wavelength of the incident light 30 can be determined by detecting the fluctuation of the current value between the electrodes 5-6 taken out via T ₂ (the amount of electric charge that moves).

  It goes without saying that the embodiment of the present invention described above can be appropriately changed without departing from the gist of the present invention.

  For example, the structures in the above-described embodiments may be combined, and in the examples of FIGS. 15 and 16, the electrode structure may be selected from the structures shown in the above-described first to third embodiments. it can. The present invention may be applied to, for example, a dye-sensitized solar cell. In this case, the organic field effect transistor described above operates in order to take out the current generated in the solar cell to an external circuit.

  The present invention is applicable to an organic field effect transistor, an electroluminescent device incorporating the same, a liquid crystal display device, a solar cell, or the like.

1 is a cross-sectional view of a semiconductor device according to a first embodiment of the present invention. FIG. 4 is a cross-sectional view sequentially showing a manufacturing process of a semiconductor device. It is sectional drawing which shows the manufacturing process of a semiconductor device equally. It is sectional drawing which shows the modification of a semiconductor device equally. It is sectional drawing which shows the other modification of a semiconductor device equally. It is sectional drawing which shows the other modification of a semiconductor device equally. It is sectional drawing which shows the further another modification of a semiconductor device. It is sectional drawing of the semiconductor device by the 2nd Embodiment of this invention. FIG. 4 is a cross-sectional view sequentially showing a manufacturing process of a semiconductor device. It is sectional drawing which shows the modification of a semiconductor device equally. It is sectional drawing which shows the other modification of a semiconductor device equally. It is sectional drawing which shows the further another modification of a semiconductor device. It is sectional drawing of the semiconductor device by the 3rd Embodiment of this invention. FIG. 4 is a cross-sectional view sequentially showing a manufacturing process of a semiconductor device. It is sectional drawing of the liquid crystal display device by the 4th Embodiment of this invention. It is sectional drawing of the sensor by the 5th Embodiment of this invention.

Explanation of symbols

1a, 1b, 1c, 1d, 1e, 1f, 1g, 1h, 1i, 1j ... organic field effect transistor, 2 ... substrate, 3 ... gate insulating film, 4 ... gate electrode, 5 ... source electrode,
5a ... metal layer, 6 ... drain electrode, 6a ... metal layer, 7 ... organic semiconductor material layer,
8 ... Channel region, 9 ... Photoresist, 10 ... Electrode material, 11 ... Metal layer,
12 ... conductive polymer mixture layer, 15 ... sensor, 16 ... insulating film, 20 ... cathode electrode,
21 ... Electron transport layer, 22 ... Light emitting layer, 23 ... Hole transport layer, 24 ... Anode electrode,
25 ... Liquid crystal display device

Claims (19)

  A first electrode, a second electrode, and an organic semiconductor material layer provided at least between these electrodes, and charge between the first electrode and the second electrode through the organic semiconductor material layer In the semiconductor device configured to move the semiconductor device, the first electrode and the second electrode are made of a mixture of a conductive polymer material and a dopant for controlling the conductivity type.   The semiconductor device according to claim 1, wherein a conductivity type of the organic semiconductor material layer and a conductivity type of the dopant are the same. The conductive polymer material is
Polythiophene, polypyrrole, polyaniline, polyacetylene, polyphenylene, polyfuran, polyselenophene, polyisothianaphthene, polyphenylene sulfide, polyphenylene vinylene, polychenylene vinylene, polynaphthalene, polyanthracene, polypyrene, polyazulene, phthalocyanine, pentacene, merocyanine and polyethylene At least one organic polymer material selected from the group consisting of dioxythiophenes;
Iodine, perchloric acid, hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, tetrafluoroboric acid, arsenic pentafluoride, hexafluorophosphoric acid, alkylsulfonic acid, perfluoroalkylsulfonic acid, polyacrylic acid, polystyrenesulfonic acid and 2. The semiconductor device according to claim 1, comprising a mixture of at least one selected from the group consisting of dodecylbenzenesulfonic acid.   The dopant is an acceptor molecule consisting of at least one selected from the group consisting of tetracyanoquinodimethane, tetracyanoethylene and tetracyanotetrafluoroquinodimethane, or tetrathiafulvalene, perylene and methylenedithiotetraselena. The semiconductor device according to claim 1, wherein the semiconductor device is at least one donor molecule selected from the group consisting of fulvalene. The organic semiconductor material is a p-type semiconductor material made of at least one selected from the group consisting of copper phthalocyanine, poly-3-hexylthiophene and pentacene, or selected from the group consisting of perylene derivatives, C ₆₀ and carbon nanotubes. The semiconductor device according to claim 1, wherein the semiconductor device is at least one n-type semiconductor material.   2. The semiconductor device according to claim 1, wherein, of the first electrode and the second electrode, at least the organic semiconductor material layer side between the two electrodes is formed of the mixture.   The semiconductor device according to claim 1, wherein metal particles having the dopant attached to the surface are mixed with the conductive polymer material.   Configured as an organic field effect transistor comprising a gate electrode, a gate insulating film, the first electrode as a source electrode, the second electrode as a drain electrode, and the organic semiconductor material layer as a channel region; The semiconductor device according to claim 1.   A first electrode, a second electrode, and an organic semiconductor material layer provided at least between these electrodes, and charge between the first electrode and the second electrode through the organic semiconductor material layer In the semiconductor device configured to move the electrode, the first electrode and the second electrode have a conductive layer and a conductive coating that covers at least the organic semiconductor material layer side between the two electrodes of the conductive layer. And a conductive coating layer made of a mixture of a conductive polymer material and a charge transfer complex.   The semiconductor device according to claim 9, wherein a conductivity type of the organic semiconductor material layer and a conductivity type of the charge transfer complex are the same. The conductive polymer material is
Polythiophene, polypyrrole, polyaniline, polyacetylene, polyphenylene, polyfuran, polyselenophene, polyisothianaphthene, polyphenylene sulfide, polyphenylene vinylene, polychenylene vinylene, polynaphthalene, polyanthracene, polypyrene, polyazulene, phthalocyanine, pentacene, merocyanine and polyethylene At least one organic polymer material selected from the group consisting of dioxythiophenes;
Iodine, perchloric acid, hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, tetrafluoroboric acid, arsenic pentafluoride, hexafluorophosphoric acid, alkylsulfonic acid, perfluoroalkylsulfonic acid, polyacrylic acid, polystyrenesulfonic acid and The semiconductor device according to claim 9, comprising a mixture of at least one selected from the group consisting of dodecylbenzenesulfonic acid.   The charge transfer complex is an acceptor molecule consisting of at least one selected from the group consisting of tetracyanoquinodimethane, tetracyanoethylene and tetracyanotetrafluoroquinodimethane, or tetrathiafulvalene, perylene and methylenedithio The semiconductor device according to claim 9, wherein the semiconductor device is at least one donor molecule selected from the group consisting of tetraselenafulvalene.   The semiconductor device according to claim 9, wherein the conductive layer is formed of at least one selected from the group consisting of gold, copper, silver, aluminum, platinum, and palladium. The organic semiconductor material is a p-type semiconductor material made of at least one selected from the group consisting of copper phthalocyanine, poly-3-hexylthiophene and pentacene, or selected from the group consisting of perylene derivatives, C ₆₀ and carbon nanotubes. The semiconductor device according to claim 9, wherein the semiconductor device is at least one n-type semiconductor material.   The semiconductor device according to claim 9, wherein metal particles having the charge transfer complex attached to a surface are mixed with the conductive polymer material.   Configured as an organic field effect transistor comprising a gate electrode, a gate insulating film, the first electrode as a source electrode, the second electrode as a drain electrode, and the organic semiconductor material layer as a channel region; The semiconductor device according to claim 9.   An optical device comprising the semiconductor device according to any one of claims 1 to 16 as a drive element.   The optical device according to claim 17, which is an electroluminescent device, a liquid crystal display device, or a solar cell.   The sensor apparatus comprised by the semiconductor device of any one of Claims 1-16.

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