JP2006294892A - Uniaxial semiconductor acceleration sensor - Google Patents

Uniaxial semiconductor acceleration sensor Download PDF

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JP2006294892A
JP2006294892A JP2005114260A JP2005114260A JP2006294892A JP 2006294892 A JP2006294892 A JP 2006294892A JP 2005114260 A JP2005114260 A JP 2005114260A JP 2005114260 A JP2005114260 A JP 2005114260A JP 2006294892 A JP2006294892 A JP 2006294892A
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acceleration sensor
acceleration
uniaxial
semiconductor acceleration
displacement
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Katsumi Hashimoto
克美 橋本
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Dai Nippon Printing Co Ltd
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Dai Nippon Printing Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a small uniaxial semiconductor acceleration sensor which is formed of a semiconductor by the use of a micromachining technique. <P>SOLUTION: The uniaxial semiconductor acceleration sensor is composed of a stationary unit formed of semiconductor material; a displacement unit which is formed of the above semiconductor material and displaced to the above stationary unit affected by acceleration in a prescribed direction; two or more connectors which are formed of the above semiconductor, arranged in the above prescribed direction so as to connect the stationary unit and the displacement unit together, and which have each a cross-sectional shape whose width in the prescribed direction is smaller than its thickness vertical to the prescribed direction; and two or more distortion detecting devices which are arranged on the above connectors respectively. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、加速度を検出する半導体加速度センサ、特に、一軸の加速度成分を検出する一軸半導体加速度センサに関する。   The present invention relates to a semiconductor acceleration sensor that detects acceleration, and more particularly to a uniaxial semiconductor acceleration sensor that detects a uniaxial acceleration component.

加速度センサは、構造物の衝撃強度の測定、あるいは構造物に生じた振動における加速度波形の解析を行うとき等、広範囲にわたって使用されている。このようにして使用されている従来の加速度センサとしては、例えば、金属からなる一軸加速度センサの技術が開示されている（例えば、特許文献１参照。）。
特開平７−１６７８８６号公報 Accelerometers are widely used for measuring the impact strength of structures or analyzing acceleration waveforms in vibrations generated in structures. As a conventional acceleration sensor used in this way, for example, a technique of a uniaxial acceleration sensor made of metal is disclosed (for example, see Patent Document 1).
JP-A-7-167886

しかしながら、金属は微細な加工が困難であり、小型化に限界があるため、金属を用いた前記技術では一軸加速度センサの小型化が困難である。そこで、本発明は、小型化を図った一軸加速度センサを提供することを目的とする。   However, since metal is difficult to finely process and there is a limit to downsizing, it is difficult to reduce the size of a uniaxial acceleration sensor with the above-described technology using metal. Therefore, an object of the present invention is to provide a uniaxial acceleration sensor that is reduced in size.

本発明に係る一軸半導体加速度センサは、半導体材料からなる固定部と、前記半導体材料からなり、所定方向の加速度を受けて前記固定部に対して変位する変位部と、前記半導体材料からなり、前記固定部と前記変位部とをそれぞれ接続し、かつ前記所定方向に並んで配置される複数の接続部であって、前記所定方向での幅より前記所定方向に垂直な方向での厚さが大きい断面形状を有する複数の接続部と、前記複数の接続部に配置される複数の歪検出素子と、を具備したことを特徴とする。   The uniaxial semiconductor acceleration sensor according to the present invention comprises a fixed portion made of a semiconductor material, the semiconductor material, a displacement portion that receives an acceleration in a predetermined direction and is displaced with respect to the fixed portion, and the semiconductor material, A plurality of connection portions that connect the fixed portion and the displacement portion and are arranged side by side in the predetermined direction, wherein the thickness in the direction perpendicular to the predetermined direction is larger than the width in the predetermined direction A plurality of connection portions having a cross-sectional shape, and a plurality of strain detection elements arranged in the plurality of connection portions.

上記構成によれば、半導体を使用して、マイクロマシニング技術を用いるので、一軸半導体加速度センサの小型化を図ることができる。   According to the above configuration, since a micromachining technique is used using a semiconductor, the uniaxial semiconductor acceleration sensor can be reduced in size.

ここで、接続部は、前記所定方向での幅より前記所定方向に垂直な方向での厚さが大きい断面形状を有している。そのため、前記所定方向の一方向の成分の加速度を受けた場合に接続部は撓むようになっている。
また、接続部が前記所定方向に並んで複数設けられているので、前記所定方向（つまり受感軸）に直交する方向の加速度に対しては、接続部の変位は小さい。したがって、受感軸は一つであり、受感軸方向に直交する加速度に対しては接続部の変位は小さい。したがって、本発明に係る半導体加速度センサは実質的に一軸方向のみの加速度を検出できる。 Here, the connection portion has a cross-sectional shape in which the thickness in the direction perpendicular to the predetermined direction is larger than the width in the predetermined direction. For this reason, the connection portion bends when receiving an acceleration of a unidirectional component in the predetermined direction.
Further, since a plurality of connecting portions are provided side by side in the predetermined direction, the displacement of the connecting portion is small with respect to acceleration in a direction orthogonal to the predetermined direction (that is, the sensitive axis). Therefore, there is one sensitive axis, and the displacement of the connecting portion is small with respect to the acceleration orthogonal to the sensitive axis direction. Therefore, the semiconductor acceleration sensor according to the present invention can detect acceleration substantially only in one axis direction.

本発明によれば、小型の一軸半導体加速度センサを提供できる。   According to the present invention, a small uniaxial semiconductor acceleration sensor can be provided.

以下、図面を参照して、本発明の実施の形態を詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

（第１の実施形態）
図１は、本発明の一実施形態に係る一軸半導体加速度センサ１を表す斜視図である。一軸半導体加速度センサ１は、加速度検出部２と加速度検出部２を狭持するように配設された上蓋部３及び下蓋部４とから構成されている。図２は、加速度検出部２を表す斜視図である。また、図３は図１の一軸半導体加速度センサ１を表す上面図である。図４、５は一軸半導体加速度センサ１を図３のA1−A2およびB1−B2に沿って切断した状態を表す一部断面図である。 (First embodiment)
FIG. 1 is a perspective view showing a uniaxial semiconductor acceleration sensor 1 according to an embodiment of the present invention. The uniaxial semiconductor acceleration sensor 1 includes an acceleration detection unit 2 and an upper lid unit 3 and a lower lid unit 4 arranged so as to sandwich the acceleration detection unit 2. FIG. 2 is a perspective view showing the acceleration detection unit 2. FIG. 3 is a top view showing the uniaxial semiconductor acceleration sensor 1 of FIG. 4 and 5 are partial cross-sectional views showing a state in which the uniaxial semiconductor acceleration sensor 1 is cut along A1-A2 and B1-B2 in FIG.

加速度検出部２の外形は、例えば、X方向2500μm、Y方向2000μm、Z方向260μmである。加速度検出部２の構成材料には、半導体、例えば、多結晶又は単結晶のシリコンを用いることができ、本実施の形態では、加速度検出部２の上面の面方位が（１００）である単結晶シリコンを使用した。
上蓋部３の外形は、例えば、X方向2500μm、Y方向1750μm、Z方向300μmである。下蓋部４の外形は、例えば、X方向2500μm、Y方向2000μm、Z方向300μmである。上蓋部３及び下蓋部４の構成材料には、例えば、ガラス板を用いることができ、本実施の形態ではパイレックス(登録商標)を用いた。上蓋部３は加速度検出部２及び下蓋部４よりもY方向の長さが250μm短く、加速度検出部２と上蓋部３間には前面に段差Wが形成されている。また、加速度検出部２と上蓋部３及び下蓋部４との間には、加速度を受けて加速度検出部２が変位できるように内部に空間５aが設けられている。 The external shape of the acceleration detector 2 is, for example, 2500 μm in the X direction, 2000 μm in the Y direction, and 260 μm in the Z direction. The constituent material of the acceleration detector 2 can be a semiconductor, for example, polycrystalline or single crystal silicon. In the present embodiment, the single crystal whose surface orientation on the top surface of the acceleration detector 2 is (100). Silicon was used.
The outer shape of the upper cover 3 is, for example, 2500 μm in the X direction, 1750 μm in the Y direction, and 300 μm in the Z direction. The outer shape of the lower lid portion 4 is, for example, 2500 μm in the X direction, 2000 μm in the Y direction, and 300 μm in the Z direction. As a constituent material of the upper lid portion 3 and the lower lid portion 4, for example, a glass plate can be used, and Pyrex (registered trademark) is used in the present embodiment. The upper lid 3 is 250 μm shorter in the Y direction than the acceleration detector 2 and the lower lid 4, and a step W is formed between the acceleration detector 2 and the upper lid 3 on the front surface. A space 5 a is provided between the acceleration detection unit 2 and the upper lid unit 3 and the lower lid unit 4 so that the acceleration detection unit 2 can be displaced by receiving acceleration.

図６は、加速度検出部２の要部を表す斜視図である。加速度検出部２は、固定部６と、変位部７と、第一の接続部８と第二の接続部９、第一の接続部８及び第二の接続部９上に配置された複数の歪検出素子R（R1〜R４）とから構成される。
固定部６は、上蓋３と下蓋４に固定されている（図５参照）。変位部７は、固定部６に離間して設けられ、X方向の加速度を受けて固定部６に対して変位する直方体のものである。
第一の接続部８及び第二の接続部９は、固定部６及び変位部７に両端部がそれぞれ一体に結合されて、互いに平行であり長さが等しい。また、第一の接続部８及び第二の接続部９は、X方向に並んで配置され、Y方向に沿ってそれぞれ設けられ、Z方向の厚さに対してX方向の幅が薄い板状のものである。本実施の形態では、第一の接続部８及び第二の接続部９の長手方向は、それぞれ＜１１０＞方向に配置されている。 FIG. 6 is a perspective view illustrating a main part of the acceleration detection unit 2. The acceleration detection unit 2 includes a fixed unit 6, a displacement unit 7, a first connection unit 8, a second connection unit 9, a first connection unit 8, and a plurality of second connection units 9. It comprises a strain detection element R (R1 to R4).
The fixing portion 6 is fixed to the upper lid 3 and the lower lid 4 (see FIG. 5). The displacement part 7 is a rectangular parallelepiped that is provided apart from the fixed part 6 and is displaced with respect to the fixed part 6 in response to acceleration in the X direction.
The first connection portion 8 and the second connection portion 9 are both coupled to the fixed portion 6 and the displacement portion 7 so that both ends thereof are integrally connected, and are parallel to each other and have the same length. Moreover, the 1st connection part 8 and the 2nd connection part 9 are arrange | positioned along with the X direction, are each provided along the Y direction, and the width | variety of a X direction is thin with respect to the thickness of a Z direction. belongs to. In this Embodiment, the longitudinal direction of the 1st connection part 8 and the 2nd connection part 9 is each arrange | positioned in the <110> direction.

接続部８、９のX方向の幅が、Z方向の厚さに対して薄くなっている。そのため、X方向の加速度を受けた場合に接続部は撓むようになっている。また、接続部８、９がX方向に並んで複数設けられているので、X方向に直交するY、Z方向の加速度に対しては、接続部８、９の変位は小さい。したがって、受感軸はX方向であり、受感軸方向に直交するY、Z方向の加速度に対しては接続部８、９の変位は小さいため、加速度センサ１は実質的に一軸方向の加速度のみを検出する。   The width in the X direction of the connecting portions 8 and 9 is thinner than the thickness in the Z direction. Therefore, the connection portion bends when it receives an acceleration in the X direction. In addition, since a plurality of connecting portions 8 and 9 are provided side by side in the X direction, the displacement of the connecting portions 8 and 9 is small with respect to acceleration in the Y and Z directions orthogonal to the X direction. Therefore, the sensory axis is the X direction, and the displacement of the connecting portions 8 and 9 is small with respect to the acceleration in the Y and Z directions orthogonal to the sensory axis direction. Only detect.

第一の接続部８及び第二の接続部９は撓みが可能な梁として機能する。加速度を受けて、第一の接続部８及び第二の接続部９が撓むことで、変位部７が固定部６に対して変位可能である。具体的には、Ｘ軸方向の加速度成分が印加されると変位部７に力が作用し、変位部７が固定部６に対してX正方向、X負方向に直線的に変位する。すなわち、ここでいう「変位」は、X軸の正負方向への移動をいう。   The 1st connection part 8 and the 2nd connection part 9 function as a beam which can be bent. The displacement part 7 can be displaced with respect to the fixed part 6 by receiving the acceleration and bending the first connection part 8 and the second connection part 9. Specifically, when an acceleration component in the X-axis direction is applied, a force is applied to the displacement portion 7, and the displacement portion 7 is linearly displaced with respect to the fixed portion 6 in the X positive direction and the X negative direction. That is, “displacement” here refers to movement of the X axis in the positive and negative directions.

変位部７のX軸方向への変位を検知することで、X軸方向の加速度を測定することができる。図６に示すように、接続部８、９の各両端部付近であって、接続部８、９の上面である（１００）面の外縁に、ピエゾ抵抗素子の長手方向が＜１１０＞方向に配置されるように、ピエゾ抵抗素子R（R1〜R４）をそれぞれ形成している。
図７は、図６の楕円の点線で囲まれた領域の拡大図であって、第二の接続部に形成したピエゾ抵抗素子R３、R４の拡大図である。ピエゾ抵抗素子の長手方向を配線１１の電流方向に沿わせて配置している。ピエゾ抵抗素子Rは、歪検出素子として機能する。ピエゾ抵抗素子Rは抵抗の変化として接続部の撓み（あるいは、歪）、ひいては変位部の変位を検出するためのものである。なお、この詳細は後述する。 By detecting the displacement of the displacement part 7 in the X-axis direction, the acceleration in the X-axis direction can be measured. As shown in FIG. 6, the longitudinal direction of the piezoresistive element is in the <110> direction in the vicinity of both end portions of the connection portions 8 and 9 and on the outer edge of the (100) plane that is the upper surface of the connection portions 8 and 9. Piezoresistive elements R (R1 to R4) are formed so as to be arranged.
FIG. 7 is an enlarged view of a region surrounded by an elliptical dotted line in FIG. 6, and is an enlarged view of the piezoresistive elements R3 and R4 formed at the second connection portion. The longitudinal direction of the piezoresistive element is arranged along the current direction of the wiring 11. The piezoresistive element R functions as a strain detection element. The piezoresistive element R is for detecting the bending (or distortion) of the connection portion as a change in resistance, and consequently the displacement of the displacement portion. Details of this will be described later.

本実施の形態では、加速度検出部２は、主面の面方位が（１００）である単結晶シリコンが使用されている。第一の接続部８及び第二の接続部９の長手方向をそれぞれ＜１１０＞方向に配置し、ピエゾ抵抗素子Rの長手方向も、前記接続部８、９の上面の＜１１０＞方向に向かって配置されている。上記構成によれば、シリコン単結晶の異方性を利用することによって、小型であって、比較的高感度で、なおかつ高精度の一軸半導体加速度センサを得ることができる。なお、この詳細は後述する。   In the present embodiment, the acceleration detector 2 uses single crystal silicon whose principal surface has a plane orientation of (100). The longitudinal directions of the first connecting portion 8 and the second connecting portion 9 are arranged in the <110> direction, respectively, and the longitudinal direction of the piezoresistive element R is also directed to the <110> direction on the upper surface of the connecting portions 8 and 9. Are arranged. According to the above configuration, by using the anisotropy of the silicon single crystal, it is possible to obtain a uniaxial semiconductor acceleration sensor that is small in size, relatively high in sensitivity, and high in accuracy. Details of this will be described later.

なお、図２に示すように、加速度検出部２は、主面の面方位が（１００）である単結晶シリコン基板を異方性ドライエッチングして作成できる。単結晶シリコン基板の長手方向の一側寄りに直方体状に基板を貫通した孔部１０を形成するとともに、孔部１０の相対する一対の面を両端部付近で挟むようにコ字型状に基板を貫通した空間５bを形成する。   As shown in FIG. 2, the acceleration detector 2 can be formed by anisotropic dry etching a single crystal silicon substrate having a main surface with a plane orientation of (100). A hole 10 that penetrates the substrate in a rectangular parallelepiped shape is formed near one side in the longitudinal direction of the single crystal silicon substrate, and the U-shaped substrate so that a pair of opposed surfaces of the hole 10 are sandwiched between both ends. A space 5b penetrating through is formed.

（第２の実施形態）
本実施形態は、以下の点において第１の実施形態と相違する。第一に、加速度検出部２が、主面の面方位が（１１０）である単結晶シリコン基板から構成されている。第二に、第一の接続部８及び第二の接続部９の長手方向をそれぞれ＜１１１＞方向に配置している。第三に、接続部８、９の上面である（１１０）面の外縁に、＜１１１＞方向に向かってピエゾ抵抗素子Rの長手方向が配置されている。
本実施形態は、その他の点では、第１の実施形態の構成と特に異なるところが無いので説明を省略する。上記構成によれば、シリコン単結晶の異方性を利用することによって、小型であって、高感度の一軸半導体加速度センサを得ることができる。なお、この詳細は後述する。 (Second Embodiment)
This embodiment is different from the first embodiment in the following points. First, the acceleration detector 2 is composed of a single crystal silicon substrate having a principal surface with a surface orientation of (110). Secondly, the longitudinal directions of the first connection portion 8 and the second connection portion 9 are arranged in the <111> direction, respectively. Thirdly, the longitudinal direction of the piezoresistive element R is arranged toward the <111> direction on the outer edge of the (110) plane which is the upper surface of the connecting portions 8 and 9.
In the other respects, the present embodiment is not particularly different from the configuration of the first embodiment, and thus the description thereof is omitted. According to the above configuration, by using the anisotropy of the silicon single crystal, a small and highly sensitive uniaxial semiconductor acceleration sensor can be obtained. Details of this will be described later.

（一軸半導体加速度センサの動作）
一軸半導体加速度センサ１による加速度の検出の原理を説明する。図６に示すように、第一の接続部８及び第二の接続部９の各両端部付近であって、接続部８、９の上面の外縁に合計4個のピエゾ抵抗素子R1〜R4が配置されている。これらピエゾ抵抗素子は、単結晶シリコン基板の第一の接続部８及び第二の接続部９の上面に形成されたP型もしくはN型の不純物ドープ領域によって構成できる。 (Operation of single-axis semiconductor acceleration sensor)
The principle of acceleration detection by the uniaxial semiconductor acceleration sensor 1 will be described. As shown in FIG. 6, a total of four piezoresistive elements R1 to R4 are provided near the both ends of the first connecting portion 8 and the second connecting portion 9 and on the outer edges of the upper surfaces of the connecting portions 8 and 9. Has been placed. These piezoresistive elements can be constituted by P-type or N-type impurity doped regions formed on the upper surfaces of the first connection portion 8 and the second connection portion 9 of the single crystal silicon substrate.

ピエゾ抵抗素子R1〜R4はそれぞれ、変位部７のX軸方向成分の変位を検出するX軸方向成分変位検出部として機能する。   The piezoresistive elements R1 to R4 each function as an X-axis direction component displacement detection unit that detects the displacement of the X-axis direction component of the displacement unit 7.

図８は、図６に対応し、変位部７にX軸正方向の加速度（＋αX）による力（＋FX＝＋ｍ・αX）が印加されたときの一軸半導体加速度センサ１の状態を表す上面図である。変位部７がX軸の正方向に移動する結果、ピエゾ抵抗素子R1、R4は伸び（（＋）として表現）、ピエゾ抵抗素子R2、R３は縮んでいる（（−）として表現）。 FIG. 8 corresponds to FIG. 6 and shows the state of the uniaxial semiconductor acceleration sensor 1 when a force (+ F X = + m · α X ) due to acceleration (+ α X ) in the X-axis positive direction is applied to the displacement portion 7. It is a top view. As a result of the displacement portion 7 moving in the positive direction of the X axis, the piezoresistive elements R1 and R4 are stretched (expressed as (+)), and the piezoresistive elements R2 and R3 are contracted (expressed as (−)).

図９は、図６に対応し、変位部７にX軸負方向の加速度（−αX）による力（−FX＝−ｍ・αX）が印加されたときの一軸加速度センサ１の状態を表す上面図である。変位部７がX軸の負方向に移動する結果、ピエゾ抵抗素子R1、R4は縮み（（−）として表現）、ピエゾ抵抗素子R2、R３は伸びている（（＋）として表現）。 FIG. 9 corresponds to FIG. 6, and the state of the uniaxial acceleration sensor 1 when a force (−F X = −m · α X ) due to the acceleration (−α X ) in the X-axis negative direction is applied to the displacement portion 7. FIG. As a result of the displacement portion 7 moving in the negative direction of the X axis, the piezoresistive elements R1 and R4 are contracted (expressed as (−)), and the piezoresistive elements R2 and R3 are expanded (expressed as (+)).

以上からわかるように、ピエゾ抵抗素子Rの伸び縮みの量から、X方向の加速度を検出することができる。ピエゾ抵抗素子Rの伸び、縮みは、ピエゾ抵抗素子Rの抵抗の変化として検出できる。   As can be seen from the above, the acceleration in the X direction can be detected from the amount of expansion and contraction of the piezoresistive element R. The expansion and contraction of the piezoresistive element R can be detected as a change in the resistance of the piezoresistive element R.

各ピエゾ抵抗素子RがシリコンへのP型不純物ドープによって構成されているとする。この場合には、ピエゾ抵抗素子Rの長手での抵抗値は伸び方向の応力が作用したときには増加し、縮み方向の応力が作用した場合には減少する。なお、ピエゾ抵抗素子RをシリコンへのN型不純物ドープによって構成した場合は抵抗値の変化が逆になる。   Assume that each piezoresistive element R is configured by doping P-type impurities into silicon. In this case, the resistance value in the longitudinal direction of the piezoresistive element R increases when stress in the expansion direction is applied, and decreases when stress in the contraction direction is applied. When the piezoresistive element R is configured by doping N-type impurities into silicon, the change in resistance value is reversed.

図１０は、ピエゾ抵抗素子Rの抵抗からX軸の方向の加速度を検出するための検出回路の構成例を示す回路図である。この検出回路では、Ｘ軸方向の加速度成分を検出するために、４個のピエゾ抵抗素子からなるブリッジ回路を構成し、そのブリッジ電圧を検出している。   FIG. 10 is a circuit diagram showing a configuration example of a detection circuit for detecting the acceleration in the X-axis direction from the resistance of the piezoresistive element R. In this detection circuit, in order to detect an acceleration component in the X-axis direction, a bridge circuit composed of four piezoresistive elements is formed, and the bridge voltage is detected.

これらのブリッジ回路では入力電圧Ｖｉｎに対する出力電圧Ｖｏｕｔの関係は以下の式で表される。
Ｖｏｕｔ／Ｖｉｎ＝
［Ｒ３／（Ｒ１＋Ｒ３）−Ｒ４／（Ｒ２＋Ｒ４）］ ……式（１） In these bridge circuits, the relationship between the output voltage Vout and the input voltage Vin is expressed by the following equation.
Vout / Vin =
[R3 / (R1 + R3) -R4 / (R2 + R4)] (1)

ピエゾ抵抗素子Ｒの伸び縮の量と抵抗値Ｒの変化とが比例することから、入力電圧に対する出力電圧の比（Ｖｏｕｔ／Ｖｉｎ）は加速度と比例し、Ｘ軸の加速度を測定することが可能となる。   Since the amount of expansion and contraction of the piezoresistive element R and the change in the resistance value R are proportional, the ratio of the output voltage to the input voltage (Vout / Vin) is proportional to the acceleration, and the X-axis acceleration can be measured. It becomes.

（シリコン単結晶の異方性を利用した一軸加速度センサの高性能化）
シリコン単結晶の異方性を利用して、一軸半導体加速度センサ１を高感度、かつ／または、高精度化する理論的説明をする。 (High-performance single-axis acceleration sensor using anisotropy of silicon single crystal)
Theoretical explanation will be given for making the uniaxial semiconductor acceleration sensor 1 highly sensitive and / or highly accurate using the anisotropy of the silicon single crystal.

まず、シリコン単結晶の異方性が電気的特性に与える影響について説明し、検出感度を向上させるための理論的説明をする。   First, the influence of the anisotropy of the silicon single crystal on the electrical characteristics will be explained, and a theoretical explanation for improving the detection sensitivity will be given.

図７に示すように、電流が流れる方向にピエゾ抵抗素子Rの長手方向を配置する。図１１に示すようにピエゾ抵抗素子Rの長手方向の応力σｌと長手方向と直交する方向の応力σｔとが作用すると、ピエゾ抵抗素子の抵抗変化率ΔR／Rは近似的に次式のように表される。
ΔR／R＝πｌσｌ＋πｔσｔ ……式（２） As shown in FIG. 7, the longitudinal direction of the piezoresistive element R is arranged in the direction in which the current flows. To act and the direction of the stress sigma t perpendicular to the longitudinal direction of the stress sigma l and the longitudinal direction of the piezoresistive element R as shown in FIG. 11, the resistance change rate [Delta] R / R of the piezoresistive element is of approximately the following equation It is expressed as follows.
ΔR / R = π l σ l + π t σ t (2)

ここで、Rは加速度による力が印加される前のピエゾ抵抗素子の抵抗、ΔRは加速度による力が印加された後のピエゾ抵抗素子の抵抗（R+ΔR）と加速度による力が印加される前のピエゾ抵抗素子の抵抗Rとの差である。πｌ、πｔは応力σｌ、σｔにそれぞれ対するピエゾ抵抗係数である。 Here, R is the resistance of the piezoresistive element before the force due to acceleration is applied, ΔR is the resistance (R + ΔR) of the piezoresistive element after the force due to acceleration is applied, and before the force due to the acceleration is applied This is the difference from the resistance R of the piezoresistive element. π l and π t are piezoresistance coefficients for the stresses σ l and σ t , respectively.

ピエゾ抵抗素子にｐ型シリコンを用いた場合を例に、ピエゾ抵抗係数πｌ、πｔの結晶方向における特性について説明する。ｐ型シリコンからなるピエゾ抵抗素子を用いたほうが、ｎ型と比較してせん断応力に関係するピエゾ抵抗係数が大きいため、一軸半導体加速度センサ１を高感度化できる。
図１２にｐ型シリコンの（１００）面におけるピエゾ抵抗係数πｌ、πｔを示す。図１３にｐ型シリコンの（１１０）面におけるピエゾ抵抗係数πｌ、πｔを示す。原点からの長さがピエゾ抵抗係数の大きさを表し、原点からの方向がそれぞれの基板面におけるピエゾ抵抗素子の長手方向の配置方向を示す。図１２と図１３は同一のスケールで示されている。 The characteristics in the crystal direction of the piezoresistance coefficients π l and π t will be described by taking as an example the case where p-type silicon is used for the piezoresistive element. Using a piezoresistive element made of p-type silicon has a higher piezoresistance coefficient related to shear stress than n-type, and thus the uniaxial semiconductor acceleration sensor 1 can be made highly sensitive.
FIG. 12 shows piezoresistance coefficients π l and π t in the (100) plane of p-type silicon. FIG. 13 shows the piezoresistance coefficients π l and π t in the (110) plane of p-type silicon. The length from the origin represents the magnitude of the piezoresistive coefficient, and the direction from the origin represents the arrangement direction of the piezoresistive elements in the longitudinal direction on the respective substrate surfaces. 12 and 13 are shown on the same scale.

図１２及び図１３が示すように、いずれの結晶面の単結晶シリコン基板でもπｌはπｔよりも値が大きい。そのため、σｌの値を大きくすれば、式（２）のΔR／Rの値を大きくすることができ、その結果、ホイーンストンブリッジからの出力電圧も大きくなり、検出感度を向上させることができる。
σｌの値を大きくするには、ピエゾ抵抗素子Rの長手方向とピエゾ抵抗素子Rの伸び縮み方向を一致させればよい。そのため、本発明の実施の形態では、図６に示すように、ピエゾ抵抗素子Rの長手方向(電流方向)とピエゾ抵抗素子Rの伸び縮み方向を一致させるべく、ピエゾ抵抗素子Rを第一の接続部８及び第二の接続部９の上面の外縁に配置し、検出感度を向上させている。 As shown in FIGS. 12 and 13, π l has a value larger than π t in any crystal plane single crystal silicon substrate. Therefore, if the value of σ l is increased, the value of ΔR / R in equation (2) can be increased, and as a result, the output voltage from the Wheatstone bridge also increases and the detection sensitivity can be improved. it can.
In order to increase the value of σ l , the longitudinal direction of the piezoresistive element R and the expansion / contraction direction of the piezoresistive element R may be matched. Therefore, in the embodiment of the present invention, as shown in FIG. 6, in order to make the longitudinal direction (current direction) of the piezoresistive element R and the expansion / contraction direction of the piezoresistive element R coincide with each other, It arrange | positions in the outer edge of the upper surface of the connection part 8 and the 2nd connection part 9, and improves detection sensitivity.

図1３に示すように、（１１０）面の、＜１１１＞方向が最大のピエゾ抵抗係数πｌをとることから、最も検出感度を向上させることができる。また、図１２に示すように、（１００）面では、＜１１０＞方向が比較的大きなピエゾ抵抗係数πｌをとることから、検出感度を向上させることができる。 As shown in FIG. 13, since the <111> direction of the (110) plane has the maximum piezoresistance coefficient π 1 , the detection sensitivity can be improved most. Further, as shown in FIG. 12, in the (100) plane, the <110> direction has a relatively large piezoresistance coefficient π l , so that the detection sensitivity can be improved.

次に、シリコン単結晶の異方性が機械的特性に与える影響について説明し、検出精度を向上させるための理論的説明をする。   Next, the influence of the anisotropy of the silicon single crystal on the mechanical characteristics will be explained, and a theoretical explanation for improving the detection accuracy will be given.

十分小さい変形に対して歪は応力に比例する(フックの法則)。応力成分は歪成分の1次関数となり、シリコン単結晶は立方晶であるため、次のように表すことができる。

Figure 2006294892
For sufficiently small deformation, strain is proportional to stress (Hooke's law). Since the stress component is a linear function of the strain component and the silicon single crystal is cubic, it can be expressed as follows.
Figure 2006294892

ここで、σｘｘ、σｙｙ、σｚｚは垂直応力であり、σｘｙ、σｘｚ、σｙｚはせん断応力である。ここで、図１４に示すように、サフィックスの最初の字（σｘｙのｘ）は力の方向、2番目の字（σｘｙのｙ）は力が加えられている面の法線方向を示す。εｘｘ、εｙｙ、εｚｚは、それぞれｘ軸方向、ｙ軸方向、ｚ軸方向の歪成分を表し、γｘｙ、γｘｚ、γｙｚは、せん断歪を表す。図１４に示す単位立方体に角加速度がなく、また、全体としての回転力がないという条件では、γｘｙ＝γｙｘ、γｘｚ＝γｚｘ、γｙｚ＝γｚｙである。Ｄ1111、Ｄ1122……は、弾性スティフネス定数である。 Here, σ xx , σ yy , and σ zz are normal stresses, and σ xy , σ xz , and σ yz are shear stresses. Here, as shown in FIG. 14, the first letter of the suffix (x of σ xy ) indicates the direction of the force, and the second letter ( y of y of σ xy ) indicates the normal direction of the surface to which the force is applied. . ε xx , ε yy , and ε zz represent strain components in the x-axis direction, y-axis direction, and z-axis direction, respectively, and γ xy , γ xz , and γ yz represent shear strains. No angular acceleration unit cube shown in FIG. 14, and in the condition that there is no rotational force as a whole, γ xy = γ yx, γ xz = γ zx, a γ yz = γ zy. D 1111 , D 1122 ... Are elastic stiffness constants.

主面の面方位が（１００）の単結晶シリコン基板のｘ、ｙ、ｚ軸を、それぞれ＜１００＞、＜０１０＞、＜００１＞方向にとると、フックの法則は以下のような一般的な形になる。

Figure 2006294892
When the x, y, and z axes of a single crystal silicon substrate with a principal plane orientation of (100) are taken in the <100>, <010>, and <001> directions, respectively, Hooke's law is as follows: It becomes a shape.
Figure 2006294892

式（４）のマトリックスからわかるように、垂直応力σｘｘ、σｙｙ、σｚｚの値は、せん断歪γｘｙ、γｘｚ、γｙｚの影響を全く受けていない。したがって、垂直応力を受けた場合に、一軸半導体加速度センサ１は、せん断歪によって捩れを生じない。捩れを生じないことから、Y軸方向やZ軸方向の加速度を受けた場合に、ピエゾ抵抗素子R1とR３の伸び縮みの量が同じであり、ピエゾ抵抗素子R2とR4の伸び縮みの量も同じである。そのため、式（１）から、Y軸方向やZ軸方向の加速度を受けても、出力はキャンセルされて、理論的にゼロにすることができる。
ここで、一般に加速度センサは受感軸に直交する方向の加速度に対してもわずかながら感度を持ち、これは、横感度と呼ばれ、測定誤差の一因となっていた。このため、加速度センサの横感度を極限まで下げることが必要である。 As can be seen from the matrix of Equation (4), the values of the normal stresses σ xx , σ yy , and σ zz are not affected at all by the shear strains γ xy , γ xz , and γ yz . Therefore, the uniaxial semiconductor acceleration sensor 1 does not twist due to shear strain when subjected to normal stress. Since the twist does not occur, the amount of expansion / contraction of the piezoresistive elements R1 and R3 is the same when the acceleration in the Y-axis direction or the Z-axis direction is applied, and the amount of expansion / contraction of the piezoresistive elements R2 and R4 is also the same The same. Therefore, even if the acceleration in the Y-axis direction or the Z-axis direction is received from the expression (1), the output is canceled and can be theoretically made zero.
Here, in general, the acceleration sensor has a slight sensitivity to acceleration in a direction orthogonal to the sensitive axis, which is called lateral sensitivity, and contributes to a measurement error. For this reason, it is necessary to reduce the lateral sensitivity of the acceleration sensor to the limit.

このように、主面の面方位が（１００）の単結晶シリコン基板を用いた場合に、一軸半導体加速度センサ１の第一の接続部８及び第二の接続部９の長手方向をそれぞれ＜１００＞方向に配置すれば、横感度を理論的にゼロにすることができ、一軸半導体加速度センサ１の高精度化を図ることができる。   As described above, when a single crystal silicon substrate having a main surface orientation of (100) is used, the longitudinal directions of the first connecting portion 8 and the second connecting portion 9 of the uniaxial semiconductor acceleration sensor 1 are each <100. When arranged in the> direction, the lateral sensitivity can theoretically be zero, and the uniaxial semiconductor acceleration sensor 1 can be highly accurate.

次に、基板の主面の面方位が（１００）である単結晶シリコン基板のｘ、ｙ、ｚ軸を、それぞれ＜１１０＞、＜１１０＞、＜００１＞方向にとった場合を説明する。この場合、フックの法則は、次のように表すことができる。

Figure 2006294892
Next, a case will be described in which the x, y, and z axes of a single crystal silicon substrate whose plane orientation of the main surface of the substrate is (100) are taken in the <110>, <110>, and <001> directions, respectively. In this case, Hooke's law can be expressed as follows.
Figure 2006294892

式（５）のマトリックスからわかるように、垂直応力σｘｘ、σｙｙ、σｚｚの値は、せん断歪γｘｙ、γｘｚ、γｙｚの影響を全く受けていない。したがって、垂直応力を受けた場合に、一軸半導体加速度センサ１は、せん断歪によって捩れを生じない。捩れを生じないことから、Y軸方向やZ軸方向の加速度を受けた場合に、ピエゾ抵抗素子R1とR３の伸び縮みの量が同じであり、ピエゾ抵抗素子R2とR4の伸び縮みの量も同じである。そのため、式（１）から、Y軸方向やZ軸方向の加速度を受けても、出力はキャンセルされて、横感度を理論的にゼロにすることができる。
そのため、主面の面方位が（１００）である単結晶シリコン基板を用いた場合には、一軸半導体加速度センサ１の第一の接続部８及び第二の接続部９の長手方向をそれぞれ＜１１０＞方向に配置すれば、横感度を理論的にゼロにすることができ、一軸半導体加速度センサ１の高精度化を図ることができる。 As can be seen from the matrix of equation (5), the values of the normal stresses σ xx , σ yy , and σ zz are not affected at all by the shear strains γ xy , γ xz , and γ yz . Therefore, the uniaxial semiconductor acceleration sensor 1 does not twist due to shear strain when subjected to normal stress. Since the twist does not occur, the amount of expansion / contraction of the piezoresistive elements R1 and R3 is the same when the acceleration in the Y-axis direction or the Z-axis direction is applied, and the amount of expansion / contraction of the piezoresistive elements R2 and R4 is also the same The same. Therefore, even if an acceleration in the Y-axis direction or the Z-axis direction is received from Equation (1), the output is canceled and the lateral sensitivity can theoretically be zero.
Therefore, when a single crystal silicon substrate having a main surface orientation of (100) is used, the longitudinal directions of the first connection portion 8 and the second connection portion 9 of the uniaxial semiconductor acceleration sensor 1 are each <110. When arranged in the> direction, the lateral sensitivity can theoretically be zero, and the uniaxial semiconductor acceleration sensor 1 can be highly accurate.

次に、基板の主面が（１１０）である単結晶シリコン基板のｘ、ｙ、ｚ軸を、それぞれ＜１１１＞、＜１１２＞、＜１１０＞方向にとった場合を説明する。この場合、フックの法則は次のように表すことができる。

Figure 2006294892
Next, the case where the x, y, and z axes of a single crystal silicon substrate whose main surface is (110) is taken in the <111>, <112>, and <110> directions will be described. In this case, Hooke's law can be expressed as follows.
Figure 2006294892

Ｄ2223、Ｄ3323……は、ゼロでない弾性スティフネス定数である。式（６）のマトリックスからわかるように、垂直応力σｘｘ、σｙｙ、σｚｚの値は、せん断歪γｘｙ、γｘｚ、γｙｚの影響を受けている。したがって、垂直応力を受けた場合に、一軸半導体加速度センサ１は、せん断歪によって捩れを生じる。捩れを生じることから、Y軸方向やZ軸方向の加速度を受けた場合に、ピエゾ抵抗素子R1とR３の伸び縮みの量が異なり、ピエゾ抵抗素子R2とR4の伸び縮みの量も異なる。そのため、式（１）から、Y軸方向やZ軸方向の加速度を受けた場合に、出力はキャンセルされず、横感度をゼロにすることは困難である。
そのため、主面の面方位が（１１０）である単結晶シリコン基板を用いた場合に、一軸半導体加速度センサ１の接続部８、９の長手方向を＜１１１＞方向に配置すると、高感度であるというメリットがあるが、横感度をゼロにすることは困難である。 D 2223 , D 3323 ... Are non-zero elastic stiffness constants. As can be seen from the matrix of Equation (6), the values of the normal stresses σ xx , σ yy , and σ zz are affected by the shear strains γ xy , γ xz , and γ yz . Therefore, the uniaxial semiconductor acceleration sensor 1 is twisted by shear strain when subjected to normal stress. Since twisting occurs, the amount of expansion / contraction of the piezoresistive elements R1 and R3 is different and the amount of expansion / contraction of the piezoresistive elements R2 and R4 is different when subjected to acceleration in the Y-axis direction or the Z-axis direction. Therefore, when the acceleration in the Y-axis direction or the Z-axis direction is received from Expression (1), the output is not canceled and it is difficult to make the lateral sensitivity zero.
For this reason, when a single crystal silicon substrate having a principal plane orientation of (110) is used, the longitudinal direction of the connecting portions 8 and 9 of the uniaxial semiconductor acceleration sensor 1 is arranged in the <111> direction, thereby providing high sensitivity. However, it is difficult to reduce the lateral sensitivity to zero.

以上から、主面の面方位が（１１０）である単結晶シリコン基板を使用する場合には、＜１１１＞方向で最大のピエゾ抵抗係数πｌをとる。そのため、接続部８、９の長手方向を、＜１１１＞方向にそれぞれ配置し、ピエゾ抵抗素子Rの長手方向を＜１１１＞方向にすれば、最も検出感度を向上させることができるというメリットがある。その一方で、横感度をゼロにすることは困難である。 From the above, in the case of using a single crystal silicon substrate whose principal surface has a (110) plane orientation, the maximum piezoresistance coefficient π 1 is taken in the <111> direction. Therefore, if the longitudinal directions of the connecting portions 8 and 9 are respectively arranged in the <111> direction and the longitudinal direction of the piezoresistive element R is the <111> direction, there is an advantage that the detection sensitivity can be improved most. . On the other hand, it is difficult to make the lateral sensitivity zero.

主面の面方位が（１００）である単結晶シリコン基板を使用する場合について説明する。一軸半導体加速度センサ１の第一の接続部８及び第二の接続部９の長手方向を、それぞれ＜１００＞又は＜１１０＞方向に配置すれば、横感度を理論的にゼロにすることができる。しかし、＜１００＞方向のピエゾ抵抗係数πｌは非常に小さく感度が低いので一軸半導体加速度センサ１に適用するのは困難である。一方、（１００）面の＜１１０＞方向は比較的大きなピエゾ抵抗係数πｌをとる。そのため、接続部８、９の長手方向を、＜１１０＞方向にそれぞれ配置し、ピエゾ抵抗素子Rの長手方向を＜１１０＞方向にすれば、高精度で、比較的高感度の一軸半導体加速度センサ１を得ることができる。 A case where a single crystal silicon substrate having a main surface with a plane orientation of (100) is used will be described. If the longitudinal directions of the first connection portion 8 and the second connection portion 9 of the uniaxial semiconductor acceleration sensor 1 are arranged in the <100> or <110> direction, respectively, the lateral sensitivity can theoretically be zero. . However, since the piezoresistance coefficient π l in the <100> direction is very small and the sensitivity is low, it is difficult to apply to the uniaxial semiconductor acceleration sensor 1. On the other hand, the <110> direction of the (100) plane takes a relatively large piezoresistance coefficient [pi l. Therefore, if the longitudinal directions of the connecting portions 8 and 9 are arranged in the <110> direction and the longitudinal direction of the piezoresistive element R is set to the <110> direction, a highly accurate and relatively sensitive uniaxial semiconductor acceleration sensor. 1 can be obtained.

（その他の実施形態）
本発明の実施形態は上記の実施形態に限られず拡張、変更可能であり、拡張、変更した実施形態も本発明の技術的範囲に含まれる。
例えば、本実施の形態では、ピエゾ抵抗素子にｐ型シリコンを用いた場合について説明したが、本発明はこれに何ら限定されるものではなく、ｎ型のピエゾ抵抗素子を用いても良いことはもちろんである。 (Other embodiments)
Embodiments of the present invention are not limited to the above-described embodiments, and can be expanded and modified. The expanded and modified embodiments are also included in the technical scope of the present invention.
For example, in this embodiment, the case where p-type silicon is used for the piezoresistive element has been described. However, the present invention is not limited to this, and an n-type piezoresistive element may be used. Of course.

本発明の一実施形態に係る一軸半導体加速度センサを表す斜視図である。It is a perspective view showing the uniaxial semiconductor acceleration sensor concerning one embodiment of the present invention. 本発明の一実施形態に係る一軸半導体加速度センサの加速度検出部を表す斜視図である。It is a perspective view showing the acceleration detection part of the uniaxial semiconductor acceleration sensor which concerns on one Embodiment of this invention. 図１の一軸半導体加速度センサの上面図である。It is a top view of the uniaxial semiconductor acceleration sensor of FIG. 一軸半導体加速度センサを図３のA1−A2に沿って切断した状態を表す一部断面図である。FIG. 4 is a partial cross-sectional view illustrating a state in which the uniaxial semiconductor acceleration sensor is cut along A1-A2 in FIG. 3. 一軸半導体加速度センサを図３のB1−B2に沿って切断した状態を表す一部断面図である。FIG. 4 is a partial cross-sectional view illustrating a state in which the uniaxial semiconductor acceleration sensor is cut along B1-B2 in FIG. 3. 本発明の一実施形態に係る一軸半導体加速度センサの加速度検出部の要部を表す斜視図である。It is a perspective view showing the principal part of the acceleration detection part of the uniaxial semiconductor acceleration sensor which concerns on one Embodiment of this invention. 図６の加速度検出部の第二の接続部に形成したピエゾ抵抗素子の拡大図である。It is an enlarged view of the piezoresistive element formed in the 2nd connection part of the acceleration detection part of FIG. 変位部にＸ軸正方向の加速度による力が印加されたときの一軸半導体加速度センサの状態を表す上面図である。It is a top view showing the state of the uniaxial semiconductor acceleration sensor when the force by the acceleration of an X-axis positive direction is applied to the displacement part. 変位部にＸ軸負方向の加速度による力が印加されたときの一軸半導体加速度センサの状態を表す上面図である。It is a top view showing the state of the uniaxial semiconductor acceleration sensor when the force by the acceleration of an X-axis negative direction is applied to the displacement part. ピエゾ抵抗素子の抵抗からＸ軸方向の加速度を検出するための検出回路の構成例を示す回路図である。It is a circuit diagram which shows the structural example of the detection circuit for detecting the acceleration of a X-axis direction from the resistance of a piezoresistive element. ピエゾ抵抗素子に作用するピエゾ抵抗素子の長手方向の応力σｌと長手方向と直交する方向の応力σｔを表す図である。It is a figure showing stress (sigma) l of the longitudinal direction of the piezoresistive element which acts on a piezoresistive element, and stress (sigma) t of the direction orthogonal to a longitudinal direction. 単結晶シリコン基板の主面である（１００）面についてのピエゾ抵抗係数πｌ、πｔを表す図である。It is a figure showing the piezoresistance coefficients (pi) l and (pi) t about (100) surface which is a main surface of a single crystal silicon substrate. 単結晶シリコン基板の主面である（１１０）面についてのピエゾ抵抗係数πｌ、πｔを表す図である。It is a figure showing the piezoresistance coefficients (pi) l and (pi) t about (110) surface which is a main surface of a single crystal silicon substrate. 立方晶の単位面積に作用する応力成分を表す図である。It is a figure showing the stress component which acts on the unit area of a cubic crystal.

符号の説明Explanation of symbols

１…一軸半導体加速度センサ、２…加速度検出部、５a，５b…空間、６…固定部、７…変位部、８…第一の接続部、９…第二の接続部、１０…孔部、Ｒ１〜Ｒ４…ピエゾ抵抗素子   DESCRIPTION OF SYMBOLS 1 ... Uniaxial semiconductor acceleration sensor, 2 ... Acceleration detection part, 5a, 5b ... Space, 6 ... Fixed part, 7 ... Displacement part, 8 ... 1st connection part, 9 ... 2nd connection part, 10 ... Hole part, R1 to R4: Piezoresistive element

Claims (5)

半導体材料からなる固定部と、
前記半導体材料からなり、所定方向の加速度を受けて前記固定部に対して変位する変位部と、
前記半導体材料からなり、前記固定部と前記変位部とをそれぞれ接続し、かつ前記所定方向に並んで配置される複数の接続部であって、前記所定方向での幅より前記所定方向に垂直な方向での厚さが大きい断面形状を有する複数の接続部と、
前記複数の接続部に配置される複数の歪検出素子と、
を具備することを特徴とする一軸半導体加速度センサ。 A fixing part made of a semiconductor material;
A displacement portion made of the semiconductor material, which receives an acceleration in a predetermined direction and is displaced with respect to the fixed portion;
A plurality of connecting portions made of the semiconductor material, each connecting the fixed portion and the displacement portion and arranged side by side in the predetermined direction, and perpendicular to the predetermined direction from the width in the predetermined direction A plurality of connecting portions having a cross-sectional shape having a large thickness in the direction;
A plurality of strain sensing elements arranged in the plurality of connecting portions;
A uniaxial semiconductor acceleration sensor comprising: 前記固定部と前記変位部と前記複数の接続部が、主面の面方位が（１００）の単結晶シリコン基板から一体的に構成されており、前記複数の接続部が、前記固定部と前記変位部の接続方向の方位が＜１１０＞であることを特徴とする請求項１に記載の一軸半導体加速度センサ。   The fixed portion, the displacement portion, and the plurality of connection portions are integrally formed from a single crystal silicon substrate having a main surface orientation of (100), and the plurality of connection portions include the fixing portion and the plurality of connection portions. The uniaxial semiconductor acceleration sensor according to claim 1, wherein the azimuth in the connecting direction of the displacement portion is <110>. 前記歪検出素子の長手方向が、前記＜１１０＞方向と略平行であることを特徴とする請求項２に記載の一軸半導体加速度センサ。   The uniaxial semiconductor acceleration sensor according to claim 2, wherein a longitudinal direction of the strain detection element is substantially parallel to the <110> direction. 前記固定部と前記変位部と前記複数の接続部が、主面の面方位が（１１０）の単結晶シリコン基板から一体的に構成されており、前記複数の接続部が、前記固定部と前記変位部の接続方向の方位が＜１１１＞であることを特徴とする請求項１に記載の一軸半導体加速度センサ。   The fixed portion, the displacement portion, and the plurality of connection portions are integrally formed from a single crystal silicon substrate having a main surface having a plane orientation of (110), and the plurality of connection portions include the fixing portion and the plurality of connection portions. The uniaxial semiconductor acceleration sensor according to claim 1, wherein the azimuth in the connecting direction of the displacement portion is <111>. 前記歪検出素子の長手方向が、前記＜１１１＞方向と略平行であることを特徴とする請求項４に記載の一軸半導体加速度センサ。   The uniaxial semiconductor acceleration sensor according to claim 4, wherein a longitudinal direction of the strain detection element is substantially parallel to the <111> direction.
JP2005114260A 2005-04-12 2005-04-12 Uniaxial semiconductor acceleration sensor Pending JP2006294892A (en)

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JP2008170383A (en) * 2007-01-15 2008-07-24 Dainippon Printing Co Ltd Single-axis semiconductor acceleration sensor
JP2010060336A (en) * 2008-09-02 2010-03-18 Dainippon Printing Co Ltd Uniaxial semiconductor acceleration sensor

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Publication number Priority date Publication date Assignee Title
JPH03204977A (en) * 1989-10-12 1991-09-06 Yokogawa Electric Corp Semiconductor acceleration sensor
JPH05172843A (en) * 1991-12-25 1993-07-13 Omron Corp Semiconductor acceleration sensor
JPH05322926A (en) * 1992-05-26 1993-12-07 Matsushita Electric Works Ltd Semiconductor acceleration sensor with driving part for self-diagnosis
JPH0743381A (en) * 1993-07-31 1995-02-14 Nippon Seiki Co Ltd Failure diagnostic circuit for semiconductor acceleration sensor
JPH0835982A (en) * 1994-07-25 1996-02-06 Fujikura Ltd Manufacture of semiconductor acceleration sensor
JPH08107217A (en) * 1994-10-04 1996-04-23 Seiko Instr Inc Semiconductor acceleration sensor
JPH09181332A (en) * 1995-12-27 1997-07-11 Denso Corp Manufacture of semiconductor dynamic quantity sensor and anisotropic etching mask
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008170383A (en) * 2007-01-15 2008-07-24 Dainippon Printing Co Ltd Single-axis semiconductor acceleration sensor
JP2010060336A (en) * 2008-09-02 2010-03-18 Dainippon Printing Co Ltd Uniaxial semiconductor acceleration sensor

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