JP2006287181A5 - - Google Patents
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- JP2006287181A5 JP2006287181A5 JP2005332335A JP2005332335A JP2006287181A5 JP 2006287181 A5 JP2006287181 A5 JP 2006287181A5 JP 2005332335 A JP2005332335 A JP 2005332335A JP 2005332335 A JP2005332335 A JP 2005332335A JP 2006287181 A5 JP2006287181 A5 JP 2006287181A5
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- 239000000758 substrate Substances 0.000 claims 277
- 230000007246 mechanism Effects 0.000 claims 92
- 238000003672 processing method Methods 0.000 claims 36
- 230000006837 decompression Effects 0.000 claims 31
- 230000007723 transport mechanism Effects 0.000 claims 30
- 238000010438 heat treatment Methods 0.000 claims 20
- 238000000034 method Methods 0.000 claims 16
- 230000032258 transport Effects 0.000 claims 16
- 238000011084 recovery Methods 0.000 claims 11
- 238000010894 electron beam technology Methods 0.000 claims 7
- 238000001514 detection method Methods 0.000 claims 6
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
Claims (62)
被処理基板を露光処理する露光処理装置と被処理基板にレジスト液を供給して処理または/及び被処理基板に現像液を供給して処理するレジスト処理装置との間に配置され、前記露光処理装置と前記レジスト処理装置との間で被処理基板の搬送を実質的に行う搬送機構と、 The exposure processing apparatus is disposed between an exposure processing apparatus that performs exposure processing on a substrate to be processed and a resist processing apparatus that supplies and processes a resist solution to the substrate to be processed and / or supplies a developing solution to the substrate to be processed. A transport mechanism that substantially transports the substrate to be processed between the apparatus and the resist processing apparatus;
前記露光処理装置にて処理された被処理基板に対して所定の温度にて加熱処理を行う加熱機構と、 A heating mechanism for performing a heat treatment at a predetermined temperature on the substrate to be processed processed by the exposure processing apparatus;
前記露光処理装置及び前記レジスト処理装置と信号の受け渡しを行うとともに、実質的に前記露光処理装置側の制御装置の制御下にされる制御機構と A control mechanism that delivers signals to and from the exposure processing apparatus and the resist processing apparatus, and is substantially under the control of a control device on the exposure processing apparatus side;
を具備し、 Comprising
当該基板処理装置内の雰囲気圧力は、前記レジスト処理装置内の雰囲気圧力または/及び前記露光処理装置内の雰囲気圧力よりも低い雰囲気圧力に設定される The atmospheric pressure in the substrate processing apparatus is set to an atmospheric pressure in the resist processing apparatus or / and an atmospheric pressure lower than the atmospheric pressure in the exposure processing apparatus.
基板処理装置。 Substrate processing equipment.
前記基板処理装置内に少なくとも所定の温度と湿度に設定された気体を供給する気体供給機構をさらに具備し、 A gas supply mechanism for supplying a gas set to at least a predetermined temperature and humidity in the substrate processing apparatus;
前記気体供給機構に対する気体の供給は、前記露光処理装置側より供給されるよう構成される The gas supply to the gas supply mechanism is configured to be supplied from the exposure processing apparatus side.
基板処理装置。 Substrate processing equipment.
前記搬送機構は自走式に構成され、 The transport mechanism is configured to be self-propelled,
前記加熱機構は、前記搬送機構の自走方向の一端側に配置され、 The heating mechanism is disposed on one end side in the self-running direction of the transport mechanism,
前記基板処理装置は、前記搬送機構の自走方向の他端側に、前記レジスト処理装置にて位置決めされた被処理基板をさらに位置決めする位置決め機構をさらに具備する The substrate processing apparatus further includes a positioning mechanism that further positions the substrate to be processed positioned by the resist processing apparatus on the other end side in the self-running direction of the transport mechanism.
基板処理装置。 Substrate processing equipment.
前記搬送機構は自走式に構成され、 The transport mechanism is configured to be self-propelled,
前記露光処理装置は、前記搬送機構の自走方向と直交する方向の一端側に配置され、 The exposure processing apparatus is disposed on one end side in a direction orthogonal to the self-running direction of the transport mechanism,
前記レジスト処理装置は、前記搬送機構の自走方向と直交する方向の他端側に配置される The resist processing apparatus is disposed on the other end side in a direction orthogonal to the self-running direction of the transport mechanism.
基板処理装置。 Substrate processing equipment.
前記露光処理装置との被処理基板の受渡し位置と、前記レジスト処理装置との被処理基板の受渡し位置とは、異なる高さ位置または/及び前記搬送機構を挟んで非対称位置に配置される The delivery position of the substrate to be processed with the exposure processing apparatus and the delivery position of the substrate to be processed with the resist processing apparatus are arranged at different height positions and / or asymmetric positions with the transport mechanism in between.
基板処理装置。 Substrate processing equipment.
前記加熱機構に対する搬送位置による搬送高さ位置は、前記位置決め機構に対する搬送機構による搬送高さ位置より、高い位置に設定される The conveyance height position by the conveyance position with respect to the heating mechanism is set to a position higher than the conveyance height position by the conveyance mechanism with respect to the positioning mechanism.
基板処理装置。 Substrate processing equipment.
前記加熱機構の下方位置に、前記レジスト処理装置との被処理基板受渡し位置が配置される A substrate delivery position to be processed with the resist processing apparatus is disposed below the heating mechanism.
基板処理装置。 Substrate processing equipment.
前記被処理基板を複数収納自在に構成された収納体を少なくとも一つ配置する配置部 Arrangement unit for arranging at least one storage body configured to store a plurality of the substrates to be processed.
をさらに具備する基板処理装置。 A substrate processing apparatus further comprising:
前記装置内の雰囲気温度は、前記レジスト処理装置内の雰囲気温度よりも低いまたは/及び前記露光処理装置内の雰囲気温度と略同一の温度に設定される The atmospheric temperature in the apparatus is set to be lower than the atmospheric temperature in the resist processing apparatus or / and substantially the same as the atmospheric temperature in the exposure processing apparatus.
基板処理装置。 Substrate processing equipment.
被処理基板にレジスト液を供給して処理または/及び被処理基板に現像液を供給して処理するレジスト処理装置 Resist processing apparatus for processing by supplying a resist solution to a substrate to be processed and / or supplying a developing solution to the substrate to be processed
をさらに具備する基板処理装置。 A substrate processing apparatus further comprising:
被処理基板に露光処理を施す露光処理装置 Exposure processing apparatus for performing exposure processing on a substrate to be processed
をさらに具備する基板処理装置。 A substrate processing apparatus further comprising:
前記空間部の他端側に設けられ露光処理を施す装置側から受け取った被処理基板に対し所定の熱処理を施す熱処理部と、この熱処理部と前記位置決め機構との間に配置され被処理基板を搬送自在に構成された搬送機構と、を具備したことを特徴とする基板処理装置。 A linear space, and a positioning mechanism that is provided on one end of the space and is positioned with respect to the substrate to be processed received from the apparatus side that applies the resist solution to the substrate to be processed;
A heat treatment unit that is provided on the other end side of the space portion and that performs a predetermined heat treatment on the substrate to be processed received from the apparatus side that performs exposure processing, and a substrate to be processed that is disposed between the heat treatment unit and the positioning mechanism. A substrate processing apparatus comprising: a transport mechanism configured to be transportable.
減圧下にて前記被処理基板に対して電子線を照射して所定の処理を施す減圧処理室と、 A reduced pressure processing chamber for performing predetermined processing by irradiating the substrate to be processed under reduced pressure with an electron beam;
前記減圧処理室に併設され、前記被処理基板を搬送自在に構成された搬送機構を有する減圧搬送室と、 A decompression transfer chamber provided in the decompression processing chamber and having a transport mechanism configured to be able to transport the substrate to be processed;
前記搬送室に前記被処理基板が搬送される前に前記他の基板処理装置にて位置決めされた被処理基板の位置合わせ精度より高い精度の位置合わせを施す位置合わせ機構または/及び前記減圧処理室に搬送した後若しくは搬送する前の被処理基板の温度を前記他の基板処理装置の雰囲気温度より低い温度に設定する温度設定機構と An alignment mechanism that performs alignment with higher accuracy than alignment accuracy of a substrate to be processed positioned by the other substrate processing apparatus before the substrate to be processed is transferred to the transfer chamber and / or the decompression processing chamber A temperature setting mechanism for setting the temperature of the substrate to be processed after being transferred to or before being transferred to a temperature lower than the ambient temperature of the other substrate processing apparatus;
を具備する基板処理装置。 A substrate processing apparatus comprising:
前記位置合わせ機構は、前記減圧搬送室に併設して設けられ、被処理基板の位置合わせに係る被処理基板の位置情報を検出する検出機構を備えた予備室に備えられ、 The alignment mechanism is provided in the decompression transfer chamber, and is provided in a spare chamber provided with a detection mechanism that detects position information of the substrate to be processed related to alignment of the substrate to be processed.
前記温度設定機構は、前記減圧処理室に搬送した後若しくは搬送する前の被処理基板の温度を前記他の基板処理装置の雰囲気温度、前記塗布処理する処理室内の雰囲気温度並びに前記現像処理する処理室内の雰囲気温度の少なくとも1つの雰囲気温度または全ての雰囲気温度より低い温度に設定する The temperature setting mechanism includes the temperature of the substrate to be processed after being transferred to the decompression processing chamber or before being transferred, the atmospheric temperature of the other substrate processing apparatus, the atmospheric temperature of the processing chamber in which the coating processing is performed, and the processing for the development processing. Set at least one ambient temperature or lower than all ambient temperatures in the room
基板処理装置。 Substrate processing equipment.
前記検出機構の検出情報をもとに前記搬送機構の減圧処理室に搬送する被処理基板の移動位置を被処理基板の搬送ごとに制御する制御機構 A control mechanism for controlling the movement position of the substrate to be processed, which is transferred to the decompression processing chamber of the transfer mechanism, based on the detection information of the detection mechanism for each transfer of the substrate to be processed.
をさらに具備する基板処理装置。 A substrate processing apparatus further comprising:
少なくとも前記減圧処理室の周囲に配置された磁気シールド Magnetic shield disposed at least around the decompression chamber
をさらに具備する基板処理装置。 A substrate processing apparatus further comprising:
前記減圧処理室の上部位置に配置された電子線照射機構をさらに具備し、 Further comprising an electron beam irradiation mechanism disposed at an upper position of the vacuum processing chamber;
前記電子線照射機構の電子線の通路の上部方向に向かって真空度が高くなる The degree of vacuum increases toward the upper part of the electron beam path of the electron beam irradiation mechanism.
基板処理装置。 Substrate processing equipment.
前記予備室の近傍に設けられ、被処理基板を複数収納自在に構成された収納体の配置部 An arrangement portion of a storage body provided in the vicinity of the preliminary chamber and configured to be capable of storing a plurality of substrates to be processed.
をさらに具備する基板処理装置。 A substrate processing apparatus further comprising:
前記配置部の収納体を装置外の作業エリアから搬入出自在である The storage body of the arrangement unit can be carried in and out from a work area outside the apparatus.
基板処理装置。 Substrate processing equipment.
前記減圧搬送室に水平方向位置に併設され、実質的に減圧搬送室内を排気自在に構成された空間部 A space that is provided in the horizontal position in the decompression transfer chamber and is configured to be substantially evacuated in the decompression transfer chamber.
をさらに具備する基板処理装置。 A substrate processing apparatus further comprising:
前記空間部に接続され、排気機構により空間部とともに減圧搬送室を一括して減圧する排気経路 An exhaust path connected to the space and collectively decompresses the decompression transfer chamber together with the space by the exhaust mechanism.
をさらに具備する基板処理装置。 A substrate processing apparatus further comprising:
温度設定機構による被処理基板の温度設定は、前記他の基板処理装置の雰囲気圧力よりも低い圧力雰囲気下にて行う The temperature setting of the substrate to be processed by the temperature setting mechanism is performed in a pressure atmosphere lower than the atmospheric pressure of the other substrate processing apparatus.
基板処理装置。 Substrate processing equipment.
前記他の基板処理装置にて位置決めされた被処理基板を装置内に搬入しまたは搬入され、 The substrate to be processed positioned by the other substrate processing apparatus is carried into or carried into the apparatus,
搬入したまたは搬入された被処理基板に対し、前記他の基板処理装置にて位置決めされた位置合わせ精度より高い精度の位置合わせを施し、 For the loaded or loaded substrate to be processed, alignment with higher accuracy than the alignment accuracy positioned by the other substrate processing apparatus is performed,
この後、被処理基板に対し、減圧処理室にて露光処理を施す Thereafter, the substrate to be processed is subjected to exposure processing in a reduced pressure processing chamber.
基板処理方法。 Substrate processing method.
前記被処理基板を減圧処理室に搬送する際に、減圧処理室の被処理基板を載置する載置台上方にて、被処理基板の移動位置を設定する When the substrate to be processed is transferred to the decompression processing chamber, the movement position of the substrate to be processed is set above the mounting table on which the processing substrate is placed in the decompression processing chamber.
基板処理方法。 Substrate processing method.
前記減圧処理室に搬送した後または搬送する前の被処理基板の温度を他の基板処理装置の雰囲気温度より低い温度に設定する The temperature of the substrate to be processed after being transferred to the decompression chamber or before being transferred is set to a temperature lower than the ambient temperature of the other substrate processing apparatus.
基板処理方法。 Substrate processing method.
前記減圧処理室に搬送した後または搬送する前の被処理基板の温度を他の基板処理装置の雰囲気圧力よりも低い圧力雰囲気下にて他の基板処理装置の雰囲気温度より低い温度に設定する The temperature of the substrate to be processed after being transferred to the decompression processing chamber or before being transferred is set to a temperature lower than the atmospheric temperature of the other substrate processing apparatus in a pressure atmosphere lower than the atmospheric pressure of the other substrate processing apparatus.
基板処理方法。 Substrate processing method.
前記減圧処理室に搬送した後または搬送する前の被処理基板の温度を他の基板処理装置の雰囲気温度、前記塗布処理する処理室内の雰囲気温度及び前記現像処理する処理室内の雰囲気温度の少なくとも1つの雰囲気温度または全ての雰囲気温度より低い温度に設定する The temperature of the substrate to be processed after being transferred to the decompression chamber or before being transferred is at least one of the atmospheric temperature of another substrate processing apparatus, the atmospheric temperature in the processing chamber for the coating treatment, and the atmospheric temperature in the processing chamber for the development processing. Set to one ambient temperature or lower than all ambient temperatures
基板処理方法。 Substrate processing method.
少なくとも前記減圧処理室の周囲に磁気シールドを配置する A magnetic shield is disposed at least around the decompression chamber.
基板処理方法。 Substrate processing method.
前記減圧処理室の上部位置に電子線照射機構を配置し、 An electron beam irradiation mechanism is disposed at the upper position of the vacuum processing chamber,
前記電子線商社機構の電子線の通路の上部方向に向かって真空度が高くなるように設定する Set so that the degree of vacuum increases toward the upper part of the electron beam passage of the electron beam trading company mechanism.
基板処理方法。 Substrate processing method.
前記位置合わせを施した後、減圧処理室に被処理基板を搬入するまでの間に、被処理基板の位置情報を得るために被処理基板の周縁部の複数個所の画像データを収集する In order to obtain positional information of the substrate to be processed, image data at a plurality of peripheral portions of the substrate to be processed is collected after the alignment is performed and before the substrate to be processed is carried into the decompression processing chamber.
基板処理方法。 Substrate processing method.
前記露光処理を施す前に、前記減圧処理室に対して開閉自在に構成され、互いに連通する2つの空間部を一括して排気する Before performing the exposure processing, the two decompression chambers are configured to be openable and closable, and the two spaces communicating with each other are exhausted collectively.
基板処理方法。 Substrate processing method.
前記2つの空間部の1つの空間部は、減圧処理室に対して被処理基板を搬送する搬送機構が配置され、前記搬送機構に被処理基板を保持し移動させ位置決めする One space part of the two space parts is provided with a transport mechanism for transporting the substrate to be processed with respect to the decompression processing chamber, and holds and moves the substrate to be processed by the transport mechanism for positioning.
基板処理方法。 Substrate processing method.
前記基板処理装置の少なくとも1つの側面に配置され、垂直方向に気流の流れが形成される各々直線状の空間部にて構成された複数の通流機構と、 A plurality of flow mechanisms arranged in at least one side surface of the substrate processing apparatus, each configured with a linear space portion in which a flow of airflow is formed in a vertical direction;
前記複数の通流機構のうちの少なくとも1つの通流機構に少なくとも温度または/及び湿度が設定された気体を供給する気体供給機構と、 A gas supply mechanism for supplying a gas having at least a temperature or / and a humidity set to at least one of the plurality of flow mechanisms;
前記複数の通流機構のうちの少なくとも1つの通流機構から気体を回収する回収機構と A recovery mechanism for recovering a gas from at least one of the plurality of flow mechanisms;
を具備する基板処理装置。 A substrate processing apparatus comprising:
前記複数の通流機構の少なくとも1つの通流機構内に設けられ、装置内の制御に係る制御機構の発熱体 A heating element of a control mechanism provided in at least one flow mechanism of the plurality of flow mechanisms and related to control in the apparatus
をさらに具備する基板処理装置。 A substrate processing apparatus further comprising:
前記気体供給機構から気体を供給される通流機構の気体の流れ方向と、前記回収機構により気体が回収される通流機構の気体の流れ方向とは、逆の方向である The gas flow direction of the flow mechanism supplied with the gas from the gas supply mechanism is opposite to the gas flow direction of the flow mechanism where the gas is recovered by the recovery mechanism.
基板処理装置。 Substrate processing equipment.
前記気体供給機構から気体を供給される通流機構の気体の流れ方向は下方向に形成され、 The gas flow direction of the flow mechanism supplied with gas from the gas supply mechanism is formed downward,
前記回収機構により回収される通流機構の気体の流れ方向は上方向に形成される The gas flow direction of the flow mechanism recovered by the recovery mechanism is formed upward.
基板処理装置。 Substrate processing equipment.
前記気体供給機構から気体を供給される通流機構の供給口及び前記回収機構により気体が回収される通流機構の回収口は、各通流機構の上部に配置される The supply port of the flow mechanism to which gas is supplied from the gas supply mechanism and the recovery port of the flow mechanism from which the gas is recovered by the recovery mechanism are arranged at the upper part of each flow mechanism.
基板処理装置。 Substrate processing equipment.
各通流機構の下方位置は、前記気体供給機構から気体を供給される通流機構から、前記回収機構により気体が回収される通流機構に、気体が供給自在に構成される The lower position of each flow mechanism is configured so that gas can be supplied from the flow mechanism supplied with gas from the gas supply mechanism to the flow mechanism where gas is recovered by the recovery mechanism.
基板処理装置。 Substrate processing equipment.
複数の通流機構の上部に設けられ、前記気体供給機構から気体を供給される通流機構に気体を供給する供給路と、 A supply path that is provided at an upper portion of the plurality of flow mechanisms and supplies gas to the flow mechanism that is supplied with gas from the gas supply mechanism;
複数の通流機構の上部に設けられ、前記回収機構に気体が回収される通流機構の回収口より気体を回収する回収路と A recovery path provided at an upper part of a plurality of flow mechanisms and recovering gas from a recovery port of a flow mechanism in which gas is recovered by the recovery mechanism;
をさらに具備する基板処理装置。 A substrate processing apparatus further comprising:
複数の通流機構の上部に設けられ、被処理基板にレジスト液を供給して処理または/及び被処理基板に現像液を供給して処理する他の基板処理装置と接続自在に構成されたユニット部に対して少なくとも温度及び湿度が調整された気体を供給する供給路 A unit provided at the upper part of a plurality of flow mechanisms and configured to be connectable to another substrate processing apparatus for supplying a processing solution to a substrate to be processed and / or supplying a developing solution to the substrate to be processed. Supply path for supplying a gas whose temperature and humidity are adjusted to at least a part
をさらに具備する基板処理装置。 A substrate processing apparatus further comprising:
前記気体の温度は、被処理基板にレジスト液を供給して処理または/及び被処理基板に現像液を供給して処理する他の基板処理装置内の雰囲気温度と略同一の温度またはその温度より低い温度に設定される The temperature of the gas is substantially the same as the temperature of the atmosphere in another substrate processing apparatus for supplying a resist solution to the substrate to be processed and / or supplying a developing solution to the substrate to be processed. Set to low temperature
基板処理装置。 Substrate processing equipment.
前記機構の配置位置より内部位置に配置された磁気シールド Magnetic shield arranged at an internal position from the arrangement position of the mechanism
をさらに具備する基板処理装置。 A substrate processing apparatus further comprising:
前記処理室の周囲を囲む4側面の少なくとも1つの対向する側面に、垂直方向の所定の方向に温度または/及び湿度が設定された気体の流れを形成するよう気体を供給し、 A gas is supplied to at least one opposing side surface that surrounds the periphery of the processing chamber so as to form a gas flow in which temperature or / and humidity is set in a predetermined vertical direction,
垂直方向の所定の方向と逆の方向に温度または/及び湿度が設定された気体の流れを形成し気体を回収する A gas flow in which temperature or / and humidity is set in a direction opposite to a predetermined direction in the vertical direction is formed to collect the gas.
基板処理方法。 Substrate processing method.
前記気体の温度を、被処理基板にレジスト液を供給して処理または/及び被処理基板に現像液を供給して処理する他の基板処理装置内の雰囲気温度と略同一の温度またはその温度より低い温度に設定する The temperature of the gas is substantially the same as the ambient temperature in another substrate processing apparatus that supplies or processes a resist solution to the substrate to be processed and / or supplies a developer to the substrate to be processed, or the temperature thereof. Set to low temperature
基板処理方法。 Substrate processing method.
前記気体供給機構から気体を供給される通流機構の供給口及び前記回収機構により気体が回収される通流機構の回収口を、各通流機構の上部に配置する The supply port of the flow mechanism that is supplied with gas from the gas supply mechanism and the recovery port of the flow mechanism that recovers the gas by the recovery mechanism are disposed above each flow mechanism.
基板処理方法。 Substrate processing method.
垂直方向の所定の方向に温度または/及び湿度が設定された気体の流れを形成するよう気体を供給するとき、上部から下部に向かって気体を供給し、 When supplying a gas to form a gas flow with a temperature or / and humidity set in a predetermined direction in the vertical direction, the gas is supplied from the top to the bottom,
垂直方向の所定の方向と逆の方向に温度または/及び湿度が設定された気体の流れを形成し気体を回収するとき、下部から上部に向かって気体を回収する When a gas flow with temperature or / and humidity set in a direction opposite to the predetermined direction in the vertical direction is formed and gas is recovered, the gas is recovered from the lower part to the upper part.
基板処理方法。 Substrate processing method.
処理室の上部に被処理基板にレジスト液を供給して処理または/及び被処理基板に現像液を供給して処理する他の基板処理装置と接続自在に構成されたユニット部に対して少なくとも温度及び湿度が調整された気体を供給する At least the temperature of a unit portion configured to be connectable to another substrate processing apparatus for processing by supplying a resist solution to the substrate to be processed and / or supplying a developer to the substrate to be processed at the upper part of the processing chamber And gas with adjusted humidity
基板処理方法。 Substrate processing method.
前記気体の温度を、前記他の基板処理装置内の雰囲気温度と略同一の温度またはその温度より低い温度に設定する The temperature of the gas is set to a temperature substantially equal to or lower than the ambient temperature in the other substrate processing apparatus.
基板処理方法。 Substrate processing method.
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JP2008300578A (en) * | 2007-05-30 | 2008-12-11 | Canon Inc | Exposure apparatus and device-manufacturing method |
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JP5560148B2 (en) * | 2010-09-14 | 2014-07-23 | 株式会社日立ハイテクノロジーズ | Inspection device and positioning device |
KR101800105B1 (en) * | 2013-05-30 | 2017-11-21 | 가부시키가이샤 히다치 하이테크놀로지즈 | Charged particle beam device |
US11676845B2 (en) * | 2020-06-30 | 2023-06-13 | Brooks Automation Us, Llc | Automated teach apparatus for robotic systems and method therefor |
JP2022143661A (en) * | 2021-03-18 | 2022-10-03 | 株式会社Screenホールディングス | Substrate coating device and substrate coating method |
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