JP2006287181A5 - - Google Patents

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JP2006287181A5
JP2006287181A5 JP2005332335A JP2005332335A JP2006287181A5 JP 2006287181 A5 JP2006287181 A5 JP 2006287181A5 JP 2005332335 A JP2005332335 A JP 2005332335A JP 2005332335 A JP2005332335 A JP 2005332335A JP 2006287181 A5 JP2006287181 A5 JP 2006287181A5
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substrate
processed
processing apparatus
substrate processing
chamber
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基板処理装置であって、  A substrate processing apparatus,
被処理基板を露光処理する露光処理装置と被処理基板にレジスト液を供給して処理または/及び被処理基板に現像液を供給して処理するレジスト処理装置との間に配置され、前記露光処理装置と前記レジスト処理装置との間で被処理基板の搬送を実質的に行う搬送機構と、  The exposure processing apparatus is disposed between an exposure processing apparatus that performs exposure processing on a substrate to be processed and a resist processing apparatus that supplies and processes a resist solution to the substrate to be processed and / or supplies a developing solution to the substrate to be processed. A transport mechanism that substantially transports the substrate to be processed between the apparatus and the resist processing apparatus;
前記露光処理装置にて処理された被処理基板に対して所定の温度にて加熱処理を行う加熱機構と、  A heating mechanism for performing a heat treatment at a predetermined temperature on the substrate to be processed processed by the exposure processing apparatus;
前記露光処理装置及び前記レジスト処理装置と信号の受け渡しを行うとともに、実質的に前記露光処理装置側の制御装置の制御下にされる制御機構と  A control mechanism that delivers signals to and from the exposure processing apparatus and the resist processing apparatus, and is substantially under the control of a control device on the exposure processing apparatus side;
を具備し、  Comprising
当該基板処理装置内の雰囲気圧力は、前記レジスト処理装置内の雰囲気圧力または/及び前記露光処理装置内の雰囲気圧力よりも低い雰囲気圧力に設定される  The atmospheric pressure in the substrate processing apparatus is set to an atmospheric pressure in the resist processing apparatus or / and an atmospheric pressure lower than the atmospheric pressure in the exposure processing apparatus.
基板処理装置。  Substrate processing equipment.
請求項1に記載の基板処理装置であって、  The substrate processing apparatus according to claim 1,
前記基板処理装置内に少なくとも所定の温度と湿度に設定された気体を供給する気体供給機構をさらに具備し、  A gas supply mechanism for supplying a gas set to at least a predetermined temperature and humidity in the substrate processing apparatus;
前記気体供給機構に対する気体の供給は、前記露光処理装置側より供給されるよう構成される  The gas supply to the gas supply mechanism is configured to be supplied from the exposure processing apparatus side.
基板処理装置。  Substrate processing equipment.
請求項1または請求項2に記載の基板処理装置であって、  The substrate processing apparatus according to claim 1 or 2, wherein
前記搬送機構は自走式に構成され、  The transport mechanism is configured to be self-propelled,
前記加熱機構は、前記搬送機構の自走方向の一端側に配置され、  The heating mechanism is disposed on one end side in the self-running direction of the transport mechanism,
前記基板処理装置は、前記搬送機構の自走方向の他端側に、前記レジスト処理装置にて位置決めされた被処理基板をさらに位置決めする位置決め機構をさらに具備する  The substrate processing apparatus further includes a positioning mechanism that further positions the substrate to be processed positioned by the resist processing apparatus on the other end side in the self-running direction of the transport mechanism.
基板処理装置。  Substrate processing equipment.
請求項1から請求項3のいずれか一項に記載の基板処理装置であって、  A substrate processing apparatus according to any one of claims 1 to 3, wherein
前記搬送機構は自走式に構成され、  The transport mechanism is configured to be self-propelled,
前記露光処理装置は、前記搬送機構の自走方向と直交する方向の一端側に配置され、  The exposure processing apparatus is disposed on one end side in a direction orthogonal to the self-running direction of the transport mechanism,
前記レジスト処理装置は、前記搬送機構の自走方向と直交する方向の他端側に配置される  The resist processing apparatus is disposed on the other end side in a direction orthogonal to the self-running direction of the transport mechanism.
基板処理装置。  Substrate processing equipment.
請求項1から請求項4のいずれか一項に記載の基板処理装置であって、  The substrate processing apparatus according to any one of claims 1 to 4, wherein:
前記露光処理装置との被処理基板の受渡し位置と、前記レジスト処理装置との被処理基板の受渡し位置とは、異なる高さ位置または/及び前記搬送機構を挟んで非対称位置に配置される  The delivery position of the substrate to be processed with the exposure processing apparatus and the delivery position of the substrate to be processed with the resist processing apparatus are arranged at different height positions and / or asymmetric positions with the transport mechanism in between.
基板処理装置。  Substrate processing equipment.
請求項3に記載の基板処理装置であって、  The substrate processing apparatus according to claim 3, wherein
前記加熱機構に対する搬送位置による搬送高さ位置は、前記位置決め機構に対する搬送機構による搬送高さ位置より、高い位置に設定される  The conveyance height position by the conveyance position with respect to the heating mechanism is set to a position higher than the conveyance height position by the conveyance mechanism with respect to the positioning mechanism.
基板処理装置。  Substrate processing equipment.
請求項1または請求項2に記載の基板処理装置であって、  The substrate processing apparatus according to claim 1 or 2, wherein
前記加熱機構の下方位置に、前記レジスト処理装置との被処理基板受渡し位置が配置される  A substrate delivery position to be processed with the resist processing apparatus is disposed below the heating mechanism.
基板処理装置。  Substrate processing equipment.
請求項1または請求項2に記載の基板処理装置であって、  The substrate processing apparatus according to claim 1 or 2, wherein
前記被処理基板を複数収納自在に構成された収納体を少なくとも一つ配置する配置部  Arrangement unit for arranging at least one storage body configured to store a plurality of the substrates to be processed.
をさらに具備する基板処理装置。  A substrate processing apparatus further comprising:
請求項1から請求項3のいずれか一項に記載の基板処理装置であって、  A substrate processing apparatus according to any one of claims 1 to 3, wherein
前記装置内の雰囲気温度は、前記レジスト処理装置内の雰囲気温度よりも低いまたは/及び前記露光処理装置内の雰囲気温度と略同一の温度に設定される  The atmospheric temperature in the apparatus is set to be lower than the atmospheric temperature in the resist processing apparatus or / and substantially the same as the atmospheric temperature in the exposure processing apparatus.
基板処理装置。  Substrate processing equipment.
請求項1または請求項2に記載の基板処理装置であって、  The substrate processing apparatus according to claim 1 or 2, wherein
被処理基板にレジスト液を供給して処理または/及び被処理基板に現像液を供給して処理するレジスト処理装置  Resist processing apparatus for processing by supplying a resist solution to a substrate to be processed and / or supplying a developing solution to the substrate to be processed
をさらに具備する基板処理装置。  A substrate processing apparatus further comprising:
請求項1または請求項2に記載の基板処理装置であって、  The substrate processing apparatus according to claim 1 or 2, wherein
被処理基板に露光処理を施す露光処理装置  Exposure processing apparatus for performing exposure processing on a substrate to be processed
をさらに具備する基板処理装置。  A substrate processing apparatus further comprising:
被処理基板を処理する基板処理装置において、一方向から被処理基板を装置外から搬入出自在に構成された基板搬入出部と、この基板搬入出部の前記一方向と略直行する方向に併設され被処理基板を減圧雰囲気下で搬送する搬送機構を備えた減圧搬送室と、この減圧搬送室の前記一方向と平行する方向に併設され被処理基板に露光処理を施す露光処理室と、を具備したことを特徴とする基板処理装置。   In a substrate processing apparatus for processing a substrate to be processed, a substrate loading / unloading unit configured to be able to load / unload the substrate to be processed from outside the apparatus from one direction and a direction substantially perpendicular to the one direction of the substrate loading / unloading unit A reduced-pressure transfer chamber provided with a transfer mechanism for transferring the substrate to be processed in a reduced-pressure atmosphere, and an exposure processing chamber for performing exposure processing on the substrate to be processed provided in a direction parallel to the one direction of the reduced-pressure transfer chamber. A substrate processing apparatus comprising the substrate processing apparatus. 被処理基板を処理する基板処理装置において、他の装置から被処理基板を搬入出自在に構成された搬送機構を備えたインターフェイス部と、このインターフェイス部の前記搬送機構により一方向から被処理基板を搬入出自在に構成された真空予備室と、この真空予備室の前記一方向と略直行する方向に併設され被処理基板を減圧雰囲気下で搬送する搬送機構を備えた減圧搬送室と、この減圧搬送室の前記一方向と平行する方向に併設され被処理基板に露光処理を施す露光処理室と、を具備したことを特徴とする基板処理装置。   In a substrate processing apparatus for processing a substrate to be processed, an interface unit including a transport mechanism configured to be able to load and unload the substrate to be processed from another device, and the substrate to be processed from one direction by the transport mechanism of the interface unit. A vacuum preliminary chamber configured to be able to carry in and out, a vacuum transport chamber provided with a transport mechanism that transports the substrate to be processed in a decompressed atmosphere, which is provided in a direction substantially perpendicular to the one direction of the vacuum preliminary chamber, and the decompression chamber A substrate processing apparatus comprising: an exposure processing chamber that is provided in a direction parallel to the one direction of the transfer chamber and performs exposure processing on the substrate to be processed. 被処理基板を処理する基板処理装置において、他の装置から被処理基板を搬入出自在に構成された搬送機構を備えたインターフェイス部と、このインターフェイス部に設けられ被処理基板の位置合わせを行う位置合わせ機構と、この位置合わせ機構により位置合わせされた被処理基板を前記搬送機構により一方向から被処理基板を搬入出自在に構成された真空予備室と、この真空予備室の前記一方向と略直行する方向に併設され被処理基板を減圧雰囲気下で搬送する搬送機構を備えた減圧搬送室と、この減圧搬送室の前記一方向と平行する方向に併設され被処理基板に露光処理を施す露光処理室と、前記インターフェイス部に設けられ前記露光処理室で露光処理された被処理基板を熱処理する熱処理部と、この熱処理部での処理と前記搬送機構との搬送の制御を施す少なくとも一つの制御機構と、を具備したことを特徴とする基板処理装置。   In a substrate processing apparatus for processing a substrate to be processed, an interface unit including a transport mechanism configured to be able to load and unload the substrate to be processed from another device, and a position for aligning the substrate to be processed provided in the interface unit An alignment mechanism, a vacuum preparatory chamber configured such that the substrate to be processed aligned by the alignment mechanism can be loaded and unloaded from one direction by the transport mechanism, and the vacuum preparatory chamber substantially in the one direction. A decompression transport chamber provided with a transport mechanism for transporting the substrate to be processed in a reduced pressure atmosphere, which is provided in a direction perpendicular to the substrate, and an exposure for performing exposure processing on the substrate to be processed provided in a direction parallel to the one direction of the decompression transport chamber. A processing chamber, a heat treatment section provided in the interface section for heat-treating a substrate to be processed that has been subjected to exposure processing in the exposure processing chamber, treatment in the heat treatment section, and the transfer device A substrate processing apparatus, characterized in that provided with the at least one control mechanism performs control of conveyance of the. 被処理基板を処理する基板処理装置において、一方向から被処理基板を搬入出自在に構成された基板搬入出部と、この基板搬入出部に設けられ被処理基板の位置合わせを検出する検出機構と、前記基板搬入出部の前記一方向と略直行する方向に併設され被処理基板を減圧雰囲気下にて搬送する搬送機構を備えた減圧搬送室と、この減圧搬送室の前記一方向と平行する方向に併設され被処理基板に露光処理を施す露光処理室と、この露光処理室に設けられ前記検出機構の検出データに基づいて前記搬送機構から搬送される被処理基板の搬入位置に移動自在に設けられたステージと、を具備したことを特徴とする基板処理装置。   In a substrate processing apparatus for processing a substrate to be processed, a substrate loading / unloading unit configured to be able to load / unload the substrate to be processed from one direction, and a detection mechanism that is provided in the substrate loading / unloading unit and detects the alignment of the substrate to be processed A reduced-pressure transfer chamber provided with a transfer mechanism that is provided in a direction substantially perpendicular to the one direction of the substrate carry-in / out section and transfers the substrate to be processed in a reduced-pressure atmosphere, and parallel to the one direction of the reduced-pressure transfer chamber And an exposure processing chamber for performing an exposure process on the substrate to be processed, and a position where the substrate to be processed is transported from the transport mechanism based on the detection data of the detection mechanism. And a stage provided on the substrate. 被処理基板を処理する基板処理装置において、他の装置にて所定の精度で位置決めされた被処理基板を一方向から搬入出自在に構成された基板搬入出部と、この基板搬入出部の前記一方向と略直行する方向に併設され被処理基板を減圧雰囲気下で搬送する搬送機構を備えた減圧搬送室と、この減圧搬送室の前記一方向と平行する方向に併設され被処理基板に露光処理を施す露光処理室と、基板搬入出部または/及び減圧搬送室に設けられ前記所定の精度より高い精度の位置決めを施す位置決め機構と、を具備したことを特徴とする基板処理装置。   In a substrate processing apparatus for processing a substrate to be processed, a substrate loading / unloading section configured to be able to load / unload a substrate to be processed positioned with a predetermined accuracy in another apparatus from one direction, and the substrate loading / unloading section A decompression transport chamber provided with a transport mechanism that transports the substrate to be processed under a reduced pressure atmosphere in a direction substantially perpendicular to one direction, and exposure to the substrate to be processed disposed in a direction parallel to the one direction of the decompression transport chamber. A substrate processing apparatus comprising: an exposure processing chamber that performs processing; and a positioning mechanism that is provided in a substrate carry-in / out section or / and a decompression transfer chamber and performs positioning with higher accuracy than the predetermined accuracy. 被処理基板を処理する基板処理装置において、被処理基板を搬入出自在に構成された搬送機構を備えたインターフェイス部と、このインターフェイス部の前記搬送機構により一方向から被処理基板を搬入出自在に構成された真空予備室と、この真空予備室の前記一方向と略直行する方向に併設され被処理基板を減圧雰囲気下で搬送する搬送機構を備えた減圧搬送室と、この減圧搬送室の前記一方向と平行する方向に併設され被処理基板に露光処理を施す露光処理室と、前記インターフェイス部と真空予備室と減圧搬送室と露光処理室の少なくとも二つの部署に設けられ被処理基板の位置決めを施す位置決め機構と、を具備したことを特徴とする基板処理装置。   In a substrate processing apparatus for processing a substrate to be processed, an interface unit having a transfer mechanism configured to be able to load and unload a substrate to be processed, and the substrate to be processed can be loaded and unloaded from one direction by the transfer mechanism of the interface unit. A vacuum preparatory chamber configured, a decompression transport chamber provided with a transport mechanism for transporting the substrate to be processed in a decompressed atmosphere, which is provided in a direction substantially perpendicular to the one direction of the vacuum preparatory chamber, and the vacuum transport chamber Positioning of the substrate to be processed provided in at least two sections of the exposure processing chamber which is provided in parallel with one direction and performs exposure processing on the substrate to be processed, the interface unit, the vacuum preliminary chamber, the decompression transfer chamber, and the exposure processing chamber And a positioning mechanism for applying the substrate. 被処理基板を処理する基板処理装置において、被処理基板を搬入出自在に構成された搬送機構を備えたインターフェイス部と、このインターフェイス部の前記搬送機構により一方向から被処理基板を搬入出自在に構成された真空予備室と、この真空予備室の前記一方向と略直行する方向に併設され被処理基板を減圧雰囲気下で搬送する搬送機構を備えた減圧搬送室と、この減圧搬送室の前記一方向と平行する方向に併設され被処理基板に露光処理を施す露光処理室と、前記インターフェイス部に配置され被処理基板の位置決めを第一の精度で施す第一の位置決め機構と、減圧搬送室または/及び露光処理室にて前記第一の精度より精度の高い第二の精度にて位置決めを施す第二の位置決め機構と、を具備したことを特徴とする基板処理装置。   In a substrate processing apparatus for processing a substrate to be processed, an interface unit having a transfer mechanism configured to be able to load and unload a substrate to be processed, and the substrate to be processed can be loaded and unloaded from one direction by the transfer mechanism of the interface unit. A vacuum preparatory chamber configured, a decompression transport chamber provided with a transport mechanism for transporting the substrate to be processed in a decompressed atmosphere, which is provided in a direction substantially perpendicular to the one direction of the vacuum preparatory chamber, and the vacuum transport chamber An exposure processing chamber which is provided in parallel with one direction and performs exposure processing on the substrate to be processed; a first positioning mechanism which is disposed in the interface unit and performs positioning of the substrate to be processed with first accuracy; and a decompression transfer chamber A substrate processing apparatus comprising: a second positioning mechanism that performs positioning with a second accuracy higher than the first accuracy in the exposure processing chamber. 被処理基板を処理する基板処理装置において、他の装置より被処理基板を搬入出自在に構成された搬送機構を備えたインターフェイス部と、このインターフェイス部の前記搬送機構により一方向から被処理基板を搬入出自在に構成されるとともに前記インターフェイス部の前記他の装置の作業スペース側に配置された真空予備室と、この真空予備室の前記一方向と略直行する方向に併設され被処理基板を減圧雰囲気下で搬送する搬送機構を備えた減圧搬送室と、この減圧搬送室の前記一方向と平行する方向に併設され被処理基板に露光処理を施す露光処理室と、前記インターフェイス部の前記真空予備室側に配置され被処理基板の位置決めを施す位置決め機構と、前記インターフェイス部に設けられ搬送機構の前記位置決め機構と対向する側に配置され被処理基板に熱処理を施す熱処理機構と、を具備したことを特徴とする基板処理装置。   In a substrate processing apparatus for processing a substrate to be processed, an interface unit including a transport mechanism configured to be able to load and unload the substrate to be processed from another device, and the substrate to be processed from one direction by the transport mechanism of the interface unit. A vacuum preparatory chamber that is configured to be able to carry in and out and that is disposed on the work space side of the other device of the interface unit, and decompresses the substrate to be processed in a direction substantially perpendicular to the one direction of the vacuum preparatory chamber A decompression transport chamber having a transport mechanism for transporting in an atmosphere; an exposure processing chamber provided in parallel with the one direction of the decompression transport chamber for performing an exposure process on the substrate to be processed; and the vacuum preliminary of the interface unit A positioning mechanism disposed on the chamber side for positioning the substrate to be processed, and a side of the transport mechanism that faces the positioning mechanism provided in the interface unit The substrate processing apparatus characterized by being arranged to anda heat treatment mechanism for performing heat treatment on the target substrate. レジスト液を被処理基板に塗布する装置及びレジスト膜が形成された被処理基板に露光処理を施す装置に対して被処理基板を搬送自在に構成された搬送機構と、露光処理を施す装置側から受け取った被処理基板に対し所定の熱処理を施す熱処理部と、レジスト液を被処理基板に塗布する装置側から受け取った被処理基板に対し位置決めする位置決め機構と、を具備したことを特徴とする基板処理装置。   From a device for applying a resist solution to a substrate to be processed and a device for performing exposure processing on a substrate to be processed on which a resist film is formed, a transport mechanism configured to transport the substrate to be processed, and a device for performing exposure processing A substrate comprising: a heat treatment section that performs a predetermined heat treatment on the received substrate to be processed; and a positioning mechanism that positions the substrate relative to the substrate to be processed received from an apparatus side that applies a resist solution to the substrate to be processed. Processing equipment. 直線状の空間部と、この空間部の一端側に設けられレジスト液を被処理基板に塗布する装置側から受け取った被処理基板に対し位置決めする位置決め機構と、
前記空間部の他端側に設けられ露光処理を施す装置側から受け取った被処理基板に対し所定の熱処理を施す熱処理部と、この熱処理部と前記位置決め機構との間に配置され被処理基板を搬送自在に構成された搬送機構と、を具備したことを特徴とする基板処理装置。
A linear space, and a positioning mechanism that is provided on one end of the space and is positioned with respect to the substrate to be processed received from the apparatus side that applies the resist solution to the substrate to be processed;
A heat treatment unit that is provided on the other end side of the space portion and that performs a predetermined heat treatment on the substrate to be processed received from the apparatus side that performs exposure processing, and a substrate to be processed that is disposed between the heat treatment unit and the positioning mechanism. A substrate processing apparatus comprising: a transport mechanism configured to be transportable.
被処理基板を大気雰囲気或いは陽圧雰囲気下にて第一の精度にて位置決めする工程と、被処理基板を減圧雰囲気下にて前記第一の精度より高い精度の第二の精度にて位置決めする工程と、この工程の後、被処理基板に対し所定の処理を施す工程と、を具備したことを特徴とする基板処理方法。   Positioning the substrate to be processed with a first accuracy in an air atmosphere or a positive pressure atmosphere, and positioning the substrate to be processed with a second accuracy higher than the first accuracy in a reduced pressure atmosphere A substrate processing method comprising: a step; and a step of performing a predetermined process on a substrate to be processed after this step. 被処理基板を大気雰囲気或いは陽圧雰囲気下にて第一の制御機構により第一の精度にて位置決めする工程と、被処理基板を減圧雰囲気下にて前記第一の制御機構を制御する第二の制御機構にて前記第一の精度より高い精度の第二の精度にて位置決めする工程と、この工程の後、被処理基板に対し所定の処理を施す工程と、を具備したことを特徴とする基板処理方法。   A step of positioning the substrate to be processed with a first control mechanism in an air atmosphere or a positive pressure atmosphere with a first accuracy; and a second method for controlling the first control mechanism in a reduced pressure atmosphere. And a step of positioning with a second accuracy higher than the first accuracy by the control mechanism, and a step of performing a predetermined process on the substrate to be processed after this step. Substrate processing method. 第一の制御機構にて制御される搬送機構により他の装置側から被処理基板を搬入する工程と、前記第一の制御機構を管理する第二の制御機構により被処理基板に対して露光処理する工程と、この露光処理が終了した被処理基板に前記第一の制御機構にて制御される搬送機構により熱処理装置に搬送する工程と、第一の制御機構にて制御される搬送機構により他の装置側に対して被処理基板を搬出する工程と、を具備したことを特徴とする基板処理方法。   A process of loading a substrate to be processed from another apparatus side by a transport mechanism controlled by a first control mechanism, and an exposure process for the substrate to be processed by a second control mechanism that manages the first control mechanism A step of transporting to the heat treatment apparatus by the transport mechanism controlled by the first control mechanism, and a transport mechanism controlled by the first control mechanism. And a step of unloading the substrate to be processed from the apparatus side. レジスト液を被処理基板に塗布する装置側から受け取った被処理基板に対し位置決めする位置決めする工程と、露光処理を施す装置側から受け取った被処理基板に対し露光処理を施す装置側からの情報に基づいて所定の温度にて熱処理を施す工程と、を具備したことを特徴とする基板処理方法。   Positioning process for positioning with respect to the substrate to be processed received from the apparatus side for applying the resist solution to the substrate to be processed, and information from the apparatus side for performing the exposure process on the substrate to be processed received from the apparatus side for performing the exposure process And a step of performing a heat treatment at a predetermined temperature based on the substrate processing method. レジスト液を被処理基板に塗布する装置側から受け取った被処理基板に対し位置決めする位置決めする工程と、露光処理を施す装置側から受け取った被処理基板に対し露光処理を施す装置側からの情報に基づいて所定の温度にて熱処理を施す工程と、この熱処理の温度情報または/及び熱処理の終了時間に係る情報をレジスト液を被処理基板に塗布する装置側に送信する工程と、を具備したことを特徴とする基板処理方法。   Positioning process for positioning with respect to the substrate to be processed received from the apparatus side for applying the resist solution to the substrate to be processed, and information from the apparatus side for performing the exposure process on the substrate to be processed received from the apparatus side for performing the exposure process And a step of performing a heat treatment at a predetermined temperature based on the temperature and a step of transmitting temperature information of the heat treatment and / or information relating to the end time of the heat treatment to the apparatus side for applying the resist solution to the substrate to be processed. A substrate processing method. 被処理基板にレジスト液を供給して処理または/及び被処理基板に現像液を供給して処理する他の基板処理装置と実質的に接続自在に構成され、被処理基板を露光処理する基板処理装置であって、  Substrate processing for performing exposure processing on a substrate to be processed, which is configured to be substantially connectable to another substrate processing apparatus for supplying a resist solution to a substrate to be processed and / or supplying a developer to a substrate to be processed and processing the substrate. A device,
減圧下にて前記被処理基板に対して電子線を照射して所定の処理を施す減圧処理室と、  A reduced pressure processing chamber for performing predetermined processing by irradiating the substrate to be processed under reduced pressure with an electron beam;
前記減圧処理室に併設され、前記被処理基板を搬送自在に構成された搬送機構を有する減圧搬送室と、  A decompression transfer chamber provided in the decompression processing chamber and having a transport mechanism configured to be able to transport the substrate to be processed;
前記搬送室に前記被処理基板が搬送される前に前記他の基板処理装置にて位置決めされた被処理基板の位置合わせ精度より高い精度の位置合わせを施す位置合わせ機構または/及び前記減圧処理室に搬送した後若しくは搬送する前の被処理基板の温度を前記他の基板処理装置の雰囲気温度より低い温度に設定する温度設定機構と  An alignment mechanism that performs alignment with higher accuracy than alignment accuracy of a substrate to be processed positioned by the other substrate processing apparatus before the substrate to be processed is transferred to the transfer chamber and / or the decompression processing chamber A temperature setting mechanism for setting the temperature of the substrate to be processed after being transferred to or before being transferred to a temperature lower than the ambient temperature of the other substrate processing apparatus;
を具備する基板処理装置。  A substrate processing apparatus comprising:
請求項27に記載の基板処理装置であって、  The substrate processing apparatus according to claim 27, wherein
前記位置合わせ機構は、前記減圧搬送室に併設して設けられ、被処理基板の位置合わせに係る被処理基板の位置情報を検出する検出機構を備えた予備室に備えられ、  The alignment mechanism is provided in the decompression transfer chamber, and is provided in a spare chamber provided with a detection mechanism that detects position information of the substrate to be processed related to alignment of the substrate to be processed.
前記温度設定機構は、前記減圧処理室に搬送した後若しくは搬送する前の被処理基板の温度を前記他の基板処理装置の雰囲気温度、前記塗布処理する処理室内の雰囲気温度並びに前記現像処理する処理室内の雰囲気温度の少なくとも1つの雰囲気温度または全ての雰囲気温度より低い温度に設定する  The temperature setting mechanism includes the temperature of the substrate to be processed after being transferred to the decompression processing chamber or before being transferred, the atmospheric temperature of the other substrate processing apparatus, the atmospheric temperature of the processing chamber in which the coating processing is performed, and the processing for the development processing. Set at least one ambient temperature or lower than all ambient temperatures in the room
基板処理装置。  Substrate processing equipment.
請求項27または請求項28に記載の基板処理装置であって、  The substrate processing apparatus according to claim 27 or claim 28, wherein:
前記検出機構の検出情報をもとに前記搬送機構の減圧処理室に搬送する被処理基板の移動位置を被処理基板の搬送ごとに制御する制御機構  A control mechanism for controlling the movement position of the substrate to be processed, which is transferred to the decompression processing chamber of the transfer mechanism, based on the detection information of the detection mechanism for each transfer of the substrate to be processed.
をさらに具備する基板処理装置。  A substrate processing apparatus further comprising:
請求項27から請求項29のいずれか一項に記載の基板処理装置であって、  A substrate processing apparatus according to any one of claims 27 to 29, wherein
少なくとも前記減圧処理室の周囲に配置された磁気シールド  Magnetic shield disposed at least around the decompression chamber
をさらに具備する基板処理装置。  A substrate processing apparatus further comprising:
請求項27から請求項29のいずれか一項に記載の基板処理装置であって、  A substrate processing apparatus according to any one of claims 27 to 29, wherein
前記減圧処理室の上部位置に配置された電子線照射機構をさらに具備し、  Further comprising an electron beam irradiation mechanism disposed at an upper position of the vacuum processing chamber;
前記電子線照射機構の電子線の通路の上部方向に向かって真空度が高くなる  The degree of vacuum increases toward the upper part of the electron beam path of the electron beam irradiation mechanism.
基板処理装置。  Substrate processing equipment.
請求項28に記載の基板処理装置であって、  The substrate processing apparatus according to claim 28, wherein
前記予備室の近傍に設けられ、被処理基板を複数収納自在に構成された収納体の配置部  An arrangement portion of a storage body provided in the vicinity of the preliminary chamber and configured to be capable of storing a plurality of substrates to be processed.
をさらに具備する基板処理装置。  A substrate processing apparatus further comprising:
請求項32に記載の基板処理装置であって、  The substrate processing apparatus according to claim 32, comprising:
前記配置部の収納体を装置外の作業エリアから搬入出自在である  The storage body of the arrangement unit can be carried in and out from a work area outside the apparatus.
基板処理装置。  Substrate processing equipment.
請求項27から請求項29のいずれか一項に記載の基板処理装置であって、  A substrate processing apparatus according to any one of claims 27 to 29, wherein
前記減圧搬送室に水平方向位置に併設され、実質的に減圧搬送室内を排気自在に構成された空間部  A space that is provided in the horizontal position in the decompression transfer chamber and is configured to be substantially evacuated in the decompression transfer chamber.
をさらに具備する基板処理装置。  A substrate processing apparatus further comprising:
請求項34に記載の基板処理装置であって、  The substrate processing apparatus according to claim 34, comprising:
前記空間部に接続され、排気機構により空間部とともに減圧搬送室を一括して減圧する排気経路  An exhaust path connected to the space and collectively decompresses the decompression transfer chamber together with the space by the exhaust mechanism.
をさらに具備する基板処理装置。  A substrate processing apparatus further comprising:
請求項27から請求項29のいずれか一項に記載の基板処理装置であって、  A substrate processing apparatus according to any one of claims 27 to 29, wherein
温度設定機構による被処理基板の温度設定は、前記他の基板処理装置の雰囲気圧力よりも低い圧力雰囲気下にて行う  The temperature setting of the substrate to be processed by the temperature setting mechanism is performed in a pressure atmosphere lower than the atmospheric pressure of the other substrate processing apparatus.
基板処理装置。  Substrate processing equipment.
被処理基板にレジスト液を供給して処理または/及び被処理基板に現像液を供給して処理する他の基板処理装置と実質的に接続自在に構成された被処理基板を露光処理する基板処理装置にて被処理基板を処理する基板処理方法であって、  Substrate processing that exposes a substrate to be processed that is configured to be substantially connectable to another substrate processing apparatus that processes the substrate by supplying a resist solution to the substrate to be processed and / or supplying a developer to the substrate to be processed. A substrate processing method for processing a substrate to be processed in an apparatus,
前記他の基板処理装置にて位置決めされた被処理基板を装置内に搬入しまたは搬入され、  The substrate to be processed positioned by the other substrate processing apparatus is carried into or carried into the apparatus,
搬入したまたは搬入された被処理基板に対し、前記他の基板処理装置にて位置決めされた位置合わせ精度より高い精度の位置合わせを施し、  For the loaded or loaded substrate to be processed, alignment with higher accuracy than the alignment accuracy positioned by the other substrate processing apparatus is performed,
この後、被処理基板に対し、減圧処理室にて露光処理を施す  Thereafter, the substrate to be processed is subjected to exposure processing in a reduced pressure processing chamber.
基板処理方法。  Substrate processing method.
請求項37に記載の基板処理方法において、さらに、  38. The substrate processing method according to claim 37, further comprising:
前記被処理基板を減圧処理室に搬送する際に、減圧処理室の被処理基板を載置する載置台上方にて、被処理基板の移動位置を設定する  When the substrate to be processed is transferred to the decompression processing chamber, the movement position of the substrate to be processed is set above the mounting table on which the processing substrate is placed in the decompression processing chamber.
基板処理方法。  Substrate processing method.
請求項37に記載の基板処理方法において、さらに、  38. The substrate processing method according to claim 37, further comprising:
前記減圧処理室に搬送した後または搬送する前の被処理基板の温度を他の基板処理装置の雰囲気温度より低い温度に設定する  The temperature of the substrate to be processed after being transferred to the decompression chamber or before being transferred is set to a temperature lower than the ambient temperature of the other substrate processing apparatus.
基板処理方法。  Substrate processing method.
請求項37に記載の基板処理方法において、さらに、  38. The substrate processing method according to claim 37, further comprising:
前記減圧処理室に搬送した後または搬送する前の被処理基板の温度を他の基板処理装置の雰囲気圧力よりも低い圧力雰囲気下にて他の基板処理装置の雰囲気温度より低い温度に設定する  The temperature of the substrate to be processed after being transferred to the decompression processing chamber or before being transferred is set to a temperature lower than the atmospheric temperature of the other substrate processing apparatus in a pressure atmosphere lower than the atmospheric pressure of the other substrate processing apparatus.
基板処理方法。  Substrate processing method.
請求項37に記載の基板処理方法において、さらに、  38. The substrate processing method according to claim 37, further comprising:
前記減圧処理室に搬送した後または搬送する前の被処理基板の温度を他の基板処理装置の雰囲気温度、前記塗布処理する処理室内の雰囲気温度及び前記現像処理する処理室内の雰囲気温度の少なくとも1つの雰囲気温度または全ての雰囲気温度より低い温度に設定する  The temperature of the substrate to be processed after being transferred to the decompression chamber or before being transferred is at least one of the atmospheric temperature of another substrate processing apparatus, the atmospheric temperature in the processing chamber for the coating treatment, and the atmospheric temperature in the processing chamber for the development processing. Set to one ambient temperature or lower than all ambient temperatures
基板処理方法。  Substrate processing method.
請求項37に記載の基板処理方法において、さらに、  38. The substrate processing method according to claim 37, further comprising:
少なくとも前記減圧処理室の周囲に磁気シールドを配置する  A magnetic shield is disposed at least around the decompression chamber.
基板処理方法。  Substrate processing method.
請求項37に記載の基板処理方法において、さらに、  38. The substrate processing method according to claim 37, further comprising:
前記減圧処理室の上部位置に電子線照射機構を配置し、  An electron beam irradiation mechanism is disposed at the upper position of the vacuum processing chamber,
前記電子線商社機構の電子線の通路の上部方向に向かって真空度が高くなるように設定する  Set so that the degree of vacuum increases toward the upper part of the electron beam passage of the electron beam trading company mechanism.
基板処理方法。  Substrate processing method.
請求項37に記載の基板処理方法において、さらに、  38. The substrate processing method according to claim 37, further comprising:
前記位置合わせを施した後、減圧処理室に被処理基板を搬入するまでの間に、被処理基板の位置情報を得るために被処理基板の周縁部の複数個所の画像データを収集する  In order to obtain positional information of the substrate to be processed, image data at a plurality of peripheral portions of the substrate to be processed is collected after the alignment is performed and before the substrate to be processed is carried into the decompression processing chamber.
基板処理方法。  Substrate processing method.
請求項37に記載の基板処理方法において、さらに、  38. The substrate processing method according to claim 37, further comprising:
前記露光処理を施す前に、前記減圧処理室に対して開閉自在に構成され、互いに連通する2つの空間部を一括して排気する  Before performing the exposure processing, the two decompression chambers are configured to be openable and closable, and the two spaces communicating with each other are exhausted collectively.
基板処理方法。  Substrate processing method.
請求項45に記載の基板処理方法において、さらに、  The substrate processing method according to claim 45, further comprising:
前記2つの空間部の1つの空間部は、減圧処理室に対して被処理基板を搬送する搬送機構が配置され、前記搬送機構に被処理基板を保持し移動させ位置決めする  One space part of the two space parts is provided with a transport mechanism for transporting the substrate to be processed with respect to the decompression processing chamber, and holds and moves the substrate to be processed by the transport mechanism for positioning.
基板処理方法。  Substrate processing method.
被処理基板を処理する基板処理装置であって、  A substrate processing apparatus for processing a substrate to be processed,
前記基板処理装置の少なくとも1つの側面に配置され、垂直方向に気流の流れが形成される各々直線状の空間部にて構成された複数の通流機構と、  A plurality of flow mechanisms arranged in at least one side surface of the substrate processing apparatus, each configured with a linear space portion in which a flow of airflow is formed in a vertical direction;
前記複数の通流機構のうちの少なくとも1つの通流機構に少なくとも温度または/及び湿度が設定された気体を供給する気体供給機構と、  A gas supply mechanism for supplying a gas having at least a temperature or / and a humidity set to at least one of the plurality of flow mechanisms;
前記複数の通流機構のうちの少なくとも1つの通流機構から気体を回収する回収機構と  A recovery mechanism for recovering a gas from at least one of the plurality of flow mechanisms;
を具備する基板処理装置。  A substrate processing apparatus comprising:
請求項47に記載の基板処理装置であって、  The substrate processing apparatus according to claim 47, wherein
前記複数の通流機構の少なくとも1つの通流機構内に設けられ、装置内の制御に係る制御機構の発熱体  A heating element of a control mechanism provided in at least one flow mechanism of the plurality of flow mechanisms and related to control in the apparatus
をさらに具備する基板処理装置。  A substrate processing apparatus further comprising:
請求項47または請求項48に記載の基板処理装置であって、  A substrate processing apparatus according to claim 47 or claim 48, wherein:
前記気体供給機構から気体を供給される通流機構の気体の流れ方向と、前記回収機構により気体が回収される通流機構の気体の流れ方向とは、逆の方向である  The gas flow direction of the flow mechanism supplied with the gas from the gas supply mechanism is opposite to the gas flow direction of the flow mechanism where the gas is recovered by the recovery mechanism.
基板処理装置。  Substrate processing equipment.
請求項47または請求項48に記載の基板処理装置であって、  A substrate processing apparatus according to claim 47 or claim 48, wherein:
前記気体供給機構から気体を供給される通流機構の気体の流れ方向は下方向に形成され、  The gas flow direction of the flow mechanism supplied with gas from the gas supply mechanism is formed downward,
前記回収機構により回収される通流機構の気体の流れ方向は上方向に形成される  The gas flow direction of the flow mechanism recovered by the recovery mechanism is formed upward.
基板処理装置。  Substrate processing equipment.
請求項47または請求項48に記載の基板処理装置であって、  A substrate processing apparatus according to claim 47 or claim 48, wherein:
前記気体供給機構から気体を供給される通流機構の供給口及び前記回収機構により気体が回収される通流機構の回収口は、各通流機構の上部に配置される  The supply port of the flow mechanism to which gas is supplied from the gas supply mechanism and the recovery port of the flow mechanism from which the gas is recovered by the recovery mechanism are arranged at the upper part of each flow mechanism.
基板処理装置。  Substrate processing equipment.
請求項51に記載の基板処理装置であって、  52. The substrate processing apparatus according to claim 51, comprising:
各通流機構の下方位置は、前記気体供給機構から気体を供給される通流機構から、前記回収機構により気体が回収される通流機構に、気体が供給自在に構成される  The lower position of each flow mechanism is configured so that gas can be supplied from the flow mechanism supplied with gas from the gas supply mechanism to the flow mechanism where gas is recovered by the recovery mechanism.
基板処理装置。  Substrate processing equipment.
請求項47または請求項48に記載の基板処理装置であって、  A substrate processing apparatus according to claim 47 or claim 48, wherein:
複数の通流機構の上部に設けられ、前記気体供給機構から気体を供給される通流機構に気体を供給する供給路と、  A supply path that is provided at an upper portion of the plurality of flow mechanisms and supplies gas to the flow mechanism that is supplied with gas from the gas supply mechanism;
複数の通流機構の上部に設けられ、前記回収機構に気体が回収される通流機構の回収口より気体を回収する回収路と  A recovery path provided at an upper part of a plurality of flow mechanisms and recovering gas from a recovery port of a flow mechanism in which gas is recovered by the recovery mechanism;
をさらに具備する基板処理装置。  A substrate processing apparatus further comprising:
請求項47または請求項48に記載の基板処理装置であって、  A substrate processing apparatus according to claim 47 or claim 48, wherein:
複数の通流機構の上部に設けられ、被処理基板にレジスト液を供給して処理または/及び被処理基板に現像液を供給して処理する他の基板処理装置と接続自在に構成されたユニット部に対して少なくとも温度及び湿度が調整された気体を供給する供給路  A unit provided at the upper part of a plurality of flow mechanisms and configured to be connectable to another substrate processing apparatus for supplying a processing solution to a substrate to be processed and / or supplying a developing solution to the substrate to be processed. Supply path for supplying a gas whose temperature and humidity are adjusted to at least a part
をさらに具備する基板処理装置。  A substrate processing apparatus further comprising:
請求項47または請求項48に記載の基板処理装置であって、  A substrate processing apparatus according to claim 47 or claim 48, wherein:
前記気体の温度は、被処理基板にレジスト液を供給して処理または/及び被処理基板に現像液を供給して処理する他の基板処理装置内の雰囲気温度と略同一の温度またはその温度より低い温度に設定される  The temperature of the gas is substantially the same as the temperature of the atmosphere in another substrate processing apparatus for supplying a resist solution to the substrate to be processed and / or supplying a developing solution to the substrate to be processed. Set to low temperature
基板処理装置。  Substrate processing equipment.
請求項47または請求項48に記載の基板処理装置であって、  A substrate processing apparatus according to claim 47 or claim 48, wherein:
前記機構の配置位置より内部位置に配置された磁気シールド  Magnetic shield arranged at an internal position from the arrangement position of the mechanism
をさらに具備する基板処理装置。  A substrate processing apparatus further comprising:
処理室にて被処理基板を処理する基板処理方法であって、  A substrate processing method for processing a substrate to be processed in a processing chamber,
前記処理室の周囲を囲む4側面の少なくとも1つの対向する側面に、垂直方向の所定の方向に温度または/及び湿度が設定された気体の流れを形成するよう気体を供給し、  A gas is supplied to at least one opposing side surface that surrounds the periphery of the processing chamber so as to form a gas flow in which temperature or / and humidity is set in a predetermined vertical direction,
垂直方向の所定の方向と逆の方向に温度または/及び湿度が設定された気体の流れを形成し気体を回収する  A gas flow in which temperature or / and humidity is set in a direction opposite to a predetermined direction in the vertical direction is formed to collect the gas.
基板処理方法。  Substrate processing method.
請求項57に記載の基板処理方法であって、さらに、  58. The substrate processing method according to claim 57, further comprising:
前記気体の温度を、被処理基板にレジスト液を供給して処理または/及び被処理基板に現像液を供給して処理する他の基板処理装置内の雰囲気温度と略同一の温度またはその温度より低い温度に設定する  The temperature of the gas is substantially the same as the ambient temperature in another substrate processing apparatus that supplies or processes a resist solution to the substrate to be processed and / or supplies a developer to the substrate to be processed, or the temperature thereof. Set to low temperature
基板処理方法。  Substrate processing method.
請求項57に記載の基板処理方法であって、さらに、  58. The substrate processing method according to claim 57, further comprising:
前記気体供給機構から気体を供給される通流機構の供給口及び前記回収機構により気体が回収される通流機構の回収口を、各通流機構の上部に配置する  The supply port of the flow mechanism that is supplied with gas from the gas supply mechanism and the recovery port of the flow mechanism that recovers the gas by the recovery mechanism are disposed above each flow mechanism.
基板処理方法。  Substrate processing method.
請求項57に記載の基板処理方法であって、  58. A substrate processing method according to claim 57, comprising:
垂直方向の所定の方向に温度または/及び湿度が設定された気体の流れを形成するよう気体を供給するとき、上部から下部に向かって気体を供給し、  When supplying a gas to form a gas flow with a temperature or / and humidity set in a predetermined direction in the vertical direction, the gas is supplied from the top to the bottom,
垂直方向の所定の方向と逆の方向に温度または/及び湿度が設定された気体の流れを形成し気体を回収するとき、下部から上部に向かって気体を回収する  When a gas flow with temperature or / and humidity set in a direction opposite to the predetermined direction in the vertical direction is formed and gas is recovered, the gas is recovered from the lower part to the upper part.
基板処理方法。  Substrate processing method.
請求項57に記載の基板処理方法であって、さらに、  58. The substrate processing method according to claim 57, further comprising:
処理室の上部に被処理基板にレジスト液を供給して処理または/及び被処理基板に現像液を供給して処理する他の基板処理装置と接続自在に構成されたユニット部に対して少なくとも温度及び湿度が調整された気体を供給する  At least the temperature of a unit portion configured to be connectable to another substrate processing apparatus for processing by supplying a resist solution to the substrate to be processed and / or supplying a developer to the substrate to be processed at the upper part of the processing chamber And gas with adjusted humidity
基板処理方法。  Substrate processing method.
請求項61に記載の基板処理方法において、さらに、  The substrate processing method according to claim 61, further comprising:
前記気体の温度を、前記他の基板処理装置内の雰囲気温度と略同一の温度またはその温度より低い温度に設定する  The temperature of the gas is set to a temperature substantially equal to or lower than the ambient temperature in the other substrate processing apparatus.
基板処理方法。  Substrate processing method.
JP2005332335A 2005-01-28 2005-11-17 Substrate processing equipment and its substrate processing method Withdrawn JP2006287181A (en)

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