JP2006284227A - Probe unit - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a probe unit capable of preventing damage to an electrode as a specimen and short circuit of a wire. <P>SOLUTION: The probe unit comprises a substrate having an insulating layer, a conductive seed layer formed on the insulating layer, and a wire that is directly formed on the seed layer and the insulating layer and where an end projects from the seed layer and is directly formed on the insulating layer and the surface of the end coming into contact with the electrode as the specimen curls. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a probe unit used for inspection of an electronic device and a method for manufacturing the probe unit.

Conventionally, probe units used for inspection of electronic devices such as LSIs and liquid crystal panels are known. For a specimen having a narrow electrode interval, a probe unit is used in which a conductive wire in contact with an electrode is finely formed by a thin film manufacturing process.
Since the side surface is formed along the side wall of the opening of the mask at the front end of the conductive wire formed by plating on the conductive film of the substrate exposed in the opening of the mask (for example, a patent) Reference 1). If the sharp corners of the conductor are strongly pressed against the electrode of the specimen, the electrodes may be damaged, or the corners of the conductor may be crushed and adjacent conductors may be short-circuited. Alternatively, there is a possibility that the foreign matter hits the corner of the tip and damages or peels off the lead wire. On the other hand, in the probe unit in which the tip of the conducting wire is separated from the substrate, the contact pressure between the electrode of the specimen and the conducting wire of the probe unit can be lowered, but the high contact pressure between the electrode and the conducting wire required for a liquid crystal panel or the like. May not be obtained (see, for example, Patent Document 2).

JP 9-318663 A JP 2002-286758 A

  The present invention has been created in view of the above-described problems, and an object of the present invention is to provide a probe unit that can prevent damage to an electrode of a specimen and short-circuit of a conducting wire.

(1) A probe unit for achieving the above object is formed directly on a substrate having an insulating layer, a conductive seed layer formed on the insulating layer, the seed layer and the insulating layer, A conductive wire having an end protruding from the seed layer and formed directly on the insulating layer, and the surface of the end contacting the electrode of the specimen is rounded.
The surface of the end portion of the conductive wire protruding from the seed layer and directly formed on the insulating layer is rounded by isotropic film growth from the seed layer when the conductive wire is formed by electrolytic plating. A conducting wire with a rounded end surface in contact with the electrode is less likely to damage the electrode even if it is strongly pressed against the electrode of the specimen. Moreover, since the conducting wire with which the surface of the edge part which contacts an electrode is round is hard to be crushed, it is hard to cause short-circuit between adjacent conducting wires.

(2) An adhesion layer made of a material having a higher bonding strength with the substrate than the seed layer and higher bonding strength with the seed layer than the substrate is formed between the insulating layer and the seed layer. Also good.
By forming an adhesion layer made of a material having a bonding strength between the insulating layer and the seed layer that is higher than that of the seed layer and higher than that of the seed layer and higher than that of the seed layer, the conductive wire is less likely to peel off.

  (3) The adhesion layer may be made of titanium or chromium.

(4) A method of manufacturing a probe unit for achieving the above object includes a step of forming a conductive seed layer on an insulating layer of a substrate, and an end portion that contacts an electrode of a specimen protrudes from the seed layer. Forming a conductive wire directly formed on the insulating layer on the seed layer by plating.
When a lead wire that is formed directly on the insulating layer with the end contacting the electrode of the specimen protruding from the seed layer is formed on the seed layer by plating, the end formed directly on the insulating layer is deposited from the seed layer. As a result, the surface becomes round. A conducting wire with a rounded end surface in contact with the electrode is less likely to damage the electrode even if it is strongly pressed against the electrode of the specimen. Moreover, since the conducting wire with which the surface of the edge part which contacts an electrode is round is hard to be crushed, it is hard to cause short-circuit between adjacent conducting wires.

  (5) The method of manufacturing the probe unit may further include a step of exposing the part of the insulating layer by etching the seed layer before the step of forming the conductive wire.

  (6) The method for manufacturing the probe unit further includes a step of forming a seed layer mask that covers a part of the insulating layer before the step of forming the seed layer. The method may further include removing the seed layer mask before forming the conductive line. In the step of forming the seed layer, the seed layer may be formed on the insulating layer not covered with the seed layer mask.

  (7) The method of manufacturing the probe unit may further include a step of forming a conductor mask having a slit exposing the seed layer and the insulating layer on the substrate before the step of forming the conductor. . In the step of forming the conducting wire, the conducting wire may be formed in a slit of the conducting wire mask.

  In the present specification, “... formed on” means “... formed directly on” and “... on the intermediate” unless there is a technical obstruction factor. It is meant to include both “formed through”. It should be noted that the order of each operation of the method described in the claims is not limited to the order of description as long as there is no technical obstruction factor, and may be executed in any order, or may be executed simultaneously. Also good.

Embodiments of the present invention will be described below based on examples.
First, as shown in FIG. 2, the adhesion layer 14 and the seed layer 12 are formed on a part of the surface of the substrate 16 by sputtering or the like. The adhesion layer 14 may not be formed between the substrate 16 and the seed layer 12. The substrate 16 may be an insulating thin single plate made of ceramic such as zirconia or alumina, glass, glass ceramic, or resin, or may have a multilayer structure in which an insulating film is laminated on a single plate made of silicon, metal, or the like. When the substrate 16 has a multilayer structure, the adhesion layer 14 or the seed layer 12 is formed on the insulating film surface of the substrate 16. The seed layer has conductivity for forming the conductive wire by electrolytic plating, and is formed of, for example, a Ni alloy such as Ni, Ni—Fe, Ni—Mn, or Ni—Co, Cu, or the like. The film thickness of the seed layer 12 is, for example, less than half the film thickness of the conducting wire. When the adhesion layer 14 is formed, the adhesion layer 14 is formed of Ti, Cr, or the like, which has a higher bonding strength with the substrate 16 than the seed layer 12 and a higher bonding strength with the seed layer 12 than the substrate 16.

As a method of forming the seed layer 12 on the surface of the substrate 16, a method of first forming the seed layer 12 on the entire surface of the substrate 16 and then removing a part of the seed layer 12 by milling or the like, There is a method of forming a seed layer 12 on the remaining portion of one surface of the substrate 16 exposed from the mask after forming a mask covering a part of the substrate.
First, in the method of forming the seed layer 12 on the entire surface of the substrate 16, specifically, for example, after forming the adhesion layer 14 made of 1000 Å Ti on the entire surface of the substrate 16 by sputtering, the surface of the Ti film is 1500 Å. A seed layer 12 made of Ni—Fe is formed by sputtering. Thereafter, a mask covering a part of the seed layer 12 is formed on the surface of the seed layer 12, and the seed layer 12 and the adhesion layer 14 exposed from the mask are removed by ion milling. After the ion milling is completed, the mask is removed.
First, in the method of forming a mask that covers a part of one surface of the substrate 16, a mask that covers a part of the substrate 16 is formed on one surface of the substrate 16, and 1000 Å Ti is formed on a part of the substrate 16 exposed from the mask. After the adhesion layer 14 made of is formed by sputtering, a seed layer 12 made of 1500 Å Ni—Fe is formed by sputtering on the surface of the Ti film. After the seed layer 12 is formed, the mask is removed.
As a mask used in the above two methods, a film obtained by applying and developing a photosensitive resist may be used, or a mask obtained by temporarily attaching an adhesive tape such as polyimide or a metal plate may be used.

  Next, as shown in FIG. 3, a mask 22 having a plurality of slits 24 for forming conducting wires is formed on the surface of the seed layer 12 and the substrate 16. A part of the seed layer 12 and a part of the substrate 16 are exposed from the slit 24. The mask 22 can be formed by applying and developing a photosensitive resist. By forming the mask 22 by developing the photosensitive resist, it is possible to form a fine slit 24 for forming a fine conductor.

  Next, as shown in FIG. 4, the conductive wire 10 is formed in the slit 24 of the mask 22 by electrolytic plating. The conducting wire 10 is formed of a metal such as Ni, Ni—Fe, Ni—Mn, Ni—Co, or Cu. The surface of the conductive wire 10 may be formed of a metal that is difficult to oxidize, such as Au, Au alloy, Rh, Pd, Ir, and Ru. Since the conducting wire 10 isotropically grows on the entire conductor surface by electrolytic plating, the conducting wire 10 grown from the end portion 26 of the seed layer 12 is also formed on the surface of the substrate 16 exposed from the slit 24. As described above, the surface 18 of the end portion 20 of the conductive wire 10 formed on the surface of the substrate 16 has a rounded shape as the end portion 20 grows isotropically from the end portion 26 of the seed layer 12.

  Next, as shown in FIG. 5, the mask 22 is removed. As a result, the seed layer 12 covered with the mask 22 is exposed.

  Next, as shown in FIG. 1, the seed layer 12 and the adhesion layer 14 protruding from the conductive wire 10 are removed by ion milling. As a result, the plurality of conductive wires 10 are insulated from each other, and the probe unit 1 is completed.

  The end 20 of the conducting wire 10 of the probe unit 1 is a part that contacts an electrode of a specimen such as an LCD panel. Since the surface 18 of the end 20 is rounded, even if the end 20 of the conductor 10 is brought into contact with the electrode of the specimen with a strong force, the end 20 is not easily crushed and spread. That is, since the surface 18 of the end portion 20 of the conducting wire 10 is rounded, adjacent conducting wires 10 are not easily short-circuited. Further, since the surface 18 of the end 20 of the conducting wire 10 is rounded, even if the end 20 of the conducting wire 10 is brought into contact with the electrode of the specimen with a strong force, the electrode is hardly damaged. Alternatively, even if a foreign object hits the corner of the tip, the conductive wire is not damaged or peeled off. Further, since the end 20 of the conducting wire 10 is in close contact with the substrate 16, when the conducting wire 10 is pressed against the electrode of the specimen, the resultant force of the repulsive force of the conducting wire 10 and the repulsive force of the substrate 16 is As a result, the contact pressure between the lead wire 10 and the electrode of the specimen can be increased.

The shape of the end 20 of the conducting wire 10 described above is an example, and the end 20 of the conducting wire 10 can take various shapes with round surfaces as shown in FIGS.
The conductive wire 10 shown in FIG. 6 has an end portion 20 formed along the side surface of the arc-shaped end portion of the slit 24 of the mask 22. Since the end portion 20 of the conductive wire 10 grows by plating until it is in close contact with the side surface of the slit 24, the surface of the end portion 20 is composed of a portion rounded by isotropic growth and a portion rounded along the side surface of the slit 24. These parts cross at an obtuse angle. The part that contacts the electrode of the specimen is a part 18 that is rounded by isotropic growth.

  The conducting wire 10 shown in FIG. 7 is obtained by growing an end 20 from a seed layer 12 having an arcuate end. The slit 24 of the mask 22 does not have a side surface in the vicinity of the extending direction of the conducting wire 10. Therefore, the end portion 20 of the conducting wire 10 is formed in a hemispherical shape because it grows isotropically from the seed layer 12 in the extending direction of the conducting wire 10 without being obstructed by the side surface of the slit 24.

  The conducting wire 10 shown in FIG. 8 has an end 20 formed along the side surface of the bent end of the slit 24 of the mask 22. Since the end portion 20 of the conducting wire 10 grows by plating until it is in close contact with the side surface of the slit 24, the surface of the end portion 20 is composed of a portion rounded by isotropic growth and a portion bent along the side surface of the slit 24. These parts cross at an obtuse angle. The part that contacts the electrode of the specimen is a part 18 that is rounded by isotropic growth.

  The conductive wire 10 shown in FIG. 9 has an end portion 20 formed along the side surface of the end portion of the slit 24 of the mask 22 bent into the shape of the Arabic numeral “3”. Since the end portion 20 of the conductive wire 10 is grown by plating until it is in close contact with the side surface of the slit 24, the surface of the end portion 20 has an Arabic numeral “3” along the portion rounded by isotropic growth and the side surface of the slit 24. It is comprised by the site | part bent in the shape, and these site | parts cross at an obtuse angle. The part that contacts the electrode of the specimen is a part 18 that is rounded by isotropic growth.

Sectional drawing which shows the probe unit by one Example of this invention. The top view which shows the probe unit by one Example of this invention. Sectional drawing which shows the manufacturing method of the probe unit by one Example of this invention. The top view which shows the manufacturing method of the probe unit by one Example of this invention. Sectional drawing which shows the manufacturing method of the probe unit by one Example of this invention. The top view which shows the manufacturing method of the probe unit by one Example of this invention. Sectional drawing which shows the manufacturing method of the probe unit by one Example of this invention. The top view which shows the manufacturing method of the probe unit by one Example of this invention. Sectional drawing which shows the manufacturing method of the probe unit by one Example of this invention. The top view which shows the manufacturing method of the probe unit by one Example of this invention. The top view which shows the manufacturing method of the probe unit by one Example of this invention. FIG. 6B is a sectional view taken along line BB in FIG. 6A. CC sectional view taken on the line of FIG. 6A. The top view which shows the manufacturing method of the probe unit by one Example of this invention. FIG. 6B is a sectional view taken along line BB in FIG. 6A. The top view which shows the manufacturing method of the probe unit by one Example of this invention. FIG. 6B is a sectional view taken along line BB in FIG. 6A. CC sectional view taken on the line of FIG. 6A. The top view which shows the manufacturing method of the probe unit by one Example of this invention. FIG. 6B is a sectional view taken along line BB in FIG. 6A. CC sectional view taken on the line of FIG. 6A.

Explanation of symbols

1: Probe unit, 10: Conductor, 12: Seed layer, 14: Adhesion layer, 16: Substrate, 18: Surface, 18: Site, 20: End, 22: Mask, 24: Slit

Claims (7)

A substrate having an insulating layer;
A conductive seed layer formed on the insulating layer;
A conductive wire formed directly on the seed layer and the insulating layer, with an end portion protruding from the seed layer and formed directly on the insulating layer, and a surface of the end portion contacting the electrode of the specimen being rounded; ,
A probe unit comprising:   An adhesion layer made of a material having higher bonding strength with the substrate than the seed layer and higher bonding strength with the seed layer than the substrate is formed between the insulating layer and the seed layer. The probe unit according to claim 1.   The probe unit according to claim 2, wherein the adhesion layer is made of titanium or chromium. Forming a conductive seed layer on the insulating layer of the substrate;
Forming a lead on the seed layer by plating on the seed layer, with an end contacting the electrode of the specimen protruding from the seed layer; and
A method for manufacturing a probe unit comprising:   5. The method of manufacturing a probe unit according to claim 4, further comprising a step of etching the seed layer to expose a part of the insulating layer before the step of forming the conductive wire. Forming a seed layer mask covering a portion of the insulating layer before the step of forming the seed layer;
Removing the seed layer mask prior to forming the conductor;
5. The method of manufacturing a probe unit according to claim 4, wherein in the step of forming the seed layer, the seed layer is formed on the insulating layer not covered with the seed layer mask. Forming a conductor mask having a slit exposing the seed layer and the insulating layer on the substrate before forming the conductor;
7. The method of manufacturing a probe unit according to claim 4, wherein in the step of forming the conducting wire, the conducting wire is formed in a slit of the conducting wire mask.

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