JP2006281137A - Production method of substrate with film and production method of electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a production method of a substrate with a film by which the film of a high definition pattern can be simply formed at a low cost on the substrate and to provide a production method of electronic equipment by using the production method of the substrate. <P>SOLUTION: The production method of the substrate with the film has a process of giving a 1st liquid drop 70 of a liquid material which is obtained by dissolving a film-forming material in a solvent or dispersing the material in a dispersion medium on the substrate 48, a process of forming a hardened part 71 by precipitation or coagulation of a part of the film-forming material in the 1st liquid drop 70 given on the substrate 48, on the substrate 48, a process of making the 1st liquid drop 70 narrow in width by giving a 2nd liquid drop 74 of the liquid material on the substrate 48 so as to overlap on a part of the 1st liquid drop 70 (or come into contact with a periphery of the 1st liquid drop 70) without including the hardened part 71 and a process of forming the film on the substrate 48 by removing the solvent or the dispersion medium from the 1st liquid drop 70 and the 2nd liquid drop 74. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a substrate with a film and a method for manufacturing an electronic device.

Conventionally, a patterning method using an inkjet method is known as a method for manufacturing a substrate with a film, that is, a method for patterning a film on the substrate (see, for example, Patent Documents 1 and 2).
Patent Document 1 proposes a method in which a liquid material in which fine particles are dispersed is directly applied to a substrate by an ink-jet method and then converted into a conductive film pattern by heat treatment or laser irradiation. According to this method, it is possible to perform pattern formation without using a photolithography technique, and the pattern formation process can be simplified. In addition, there is a merit that the amount of raw materials used is small.

On the other hand, Patent Document 2 proposes a method of improving the pattern accuracy by positioning droplets on a substrate by using a bank provided on the substrate. If the bank is formed, the liquid droplets discharged onto the substrate do not protrude from the bank, and a film pattern of, for example, about 30 μm can be formed with a positional accuracy of about 1 μm.
With the recent miniaturization of devices, finer patterns have been demanded.

In the method according to Patent Document 1, since the width of the formed film greatly depends on the droplet size in the ink jet, it is necessary to reduce the droplet size in order to obtain a film with a small width. However, there is a limit to reducing the droplet size due to restrictions on the size of the inkjet nozzle diameter. Therefore, it has been a limit to form a pattern of about 100 μm with a positional accuracy of about 30 μm.
On the other hand, the method according to Patent Document 2 has a problem in that the bank on the substrate is formed by the photolithography technique, which increases the cost.

US Pat. No. 5,132,248 JP 59-75205 A

  The objective of this invention is providing the manufacturing method of the board | substrate with a film | membrane which can form the film | membrane of a high-definition pattern on a board | substrate easily and cheaply, and the manufacturing method of an electronic device using this manufacturing method. is there.

Such an object is achieved by the present invention described below.
The method for producing a film-coated substrate of the present invention includes a step of applying a first droplet of a liquid material in which a film-forming material is dissolved in a solvent or dispersed in a dispersion medium on the substrate;
A step of depositing or agglomerating a part of the film forming material in the first droplet applied on the substrate to form a solidified portion;
By applying a second droplet of the liquid material on the substrate so as not to include the solidified portion and to overlap a part of the first droplet or to be in contact with a peripheral edge of the first droplet Narrowing the first droplet; and
And a step of forming a film on the substrate by removing a solvent or a dispersion medium from the first droplet and the second droplet.

This makes it possible to form a film that is narrower than the width of the first droplet immediately after being applied on the substrate without reducing the size of the droplet applied on the substrate. Therefore, a high-definition pattern film can be easily and inexpensively formed on the substrate.
In addition, a high-definition pattern film can be formed over the substrate without using a photoresist or the like, so that the cost of the film-coated substrate can be reduced.

In the method for manufacturing a film-coated substrate of the present invention, it is preferable that the solidified portion is formed by locally heating a part of the first droplet.
Thereby, a solidified part can be formed comparatively easily.
In the method for manufacturing a film-coated substrate of the present invention, the heating is preferably performed by laser light irradiation.
Thereby, a micro solidified part can be formed comparatively easily. As a result, a film with a high-definition pattern can be more reliably formed on the substrate.

The method for producing a film-coated substrate of the present invention includes a step of forming a solidified portion mainly composed of a film forming material on the substrate,
Applying a first droplet of a liquid material in which the film-forming material is dissolved in a solvent or dispersed in a dispersion medium so as to include the solidified portion;
By applying a second droplet of the liquid material on the substrate so as not to include the solidified portion and to overlap a part of the first droplet or to be in contact with a peripheral edge of the first droplet Narrowing the first droplet; and
And a step of forming a film on the substrate by removing a solvent or a dispersion medium from the first droplet and the second droplet.

This makes it possible to form a film that is narrower than the width of the first droplet immediately after being applied on the substrate without reducing the size of the droplet applied on the substrate. Therefore, a high-definition pattern film can be easily and inexpensively formed on the substrate.
In addition, a high-definition pattern film can be formed over the substrate without using a photoresist or the like, so that the cost of the film-coated substrate can be reduced.

In the method for manufacturing a film-coated substrate according to the present invention, the second droplet is applied onto the substrate so that the first droplet is extended toward the second droplet from the solidified portion. It is preferable to deform it.
This makes it possible to more easily and inexpensively form a high-definition pattern film on the substrate.

In the method for manufacturing a film-coated substrate according to the present invention, it is preferable that the solidified portion is located at a peripheral portion of the first droplet.
Thereby, the first droplet can be effectively narrowed between the solidified portion and the second droplet, and the first droplet can be made narrower. As a result, a high-definition pattern film can be more easily and inexpensively formed on the substrate.

In the method for manufacturing a film-coated substrate of the present invention, the second droplet overlaps a part of the first droplet on the opposite side of the solidification portion with respect to the center of the first droplet or the first droplet. It is preferable to apply on the substrate so as to be in contact with the periphery of one droplet.
Thereby, the first droplet can be effectively narrowed between the solidified portion and the second droplet, and the first droplet can be made narrower. As a result, a high-definition pattern film can be more easily and inexpensively formed on the substrate.

In the method for manufacturing a film-coated substrate according to the present invention, it is preferable that a contact angle of each of the first droplet and the second droplet with respect to the substrate is 40 to 60 °.
This makes it possible to more easily and inexpensively form a high-definition pattern film on the substrate.
In the method for manufacturing a film-coated substrate according to the present invention, the distance between the center of the first droplet and the center of the second droplet is preferably 1 to 80 μm.
This makes it possible to more easily and inexpensively form a high-definition pattern film on the substrate.

In the method for manufacturing a film-coated substrate according to the present invention, each of the first droplet and the second droplet preferably has a diameter of 30 to 80 μm.
This makes it possible to more easily and inexpensively form a high-definition pattern film on the substrate.
The method for manufacturing an electronic device of the present invention includes a step of manufacturing a substrate with a film using the method for manufacturing a substrate with a film of the present invention, and the electronic device is manufactured through the step.
Thereby, the electronic device which has the outstanding characteristic can be manufactured.

Hereinafter, the manufacturing method of the board | substrate with a film | membrane of this invention and the manufacturing method of the electronic device using this manufacturing method are demonstrated.
<Substrate with film>
First, prior to the description of the method for manufacturing a film-coated substrate of the present invention, a film-coated substrate manufactured by such a manufacturing method will be described. The method for manufacturing a substrate with a film according to the present invention forms a film with a high-definition pattern on the substrate, and can form a film that can be used for electrical wiring or electrodes on the substrate. . In the following, an electronic device substrate will be described as an example of a substrate with a film. An example in which a film on a film-coated substrate is used as a scanning line will be described.

FIG. 1 is a block diagram showing a configuration of an electronic device substrate (substrate with a film) according to this embodiment, and FIG. 2 is a diagram (longitudinal section) showing a configuration of a thin film transistor included in the electronic device substrate of this embodiment. Figure and plan view). In the following description, the upper side in FIG. 2 is described as “upper”, and the lower side is described as “lower”.
An electronic device substrate (active matrix device) 100 shown in FIG. 1 is provided on a substrate 48, a plurality of data lines 101 and a plurality of scanning lines 102 that intersect each other, and these data lines 101. The thin film transistor 1 and the pixel electrode 103 are provided in the vicinity of each intersection of the scanning line 102 and the scanning line 102.

As shown in FIG. 2, the thin film transistor 1 of the present embodiment is a top gate type thin film transistor, and a source electrode 72 and a drain electrode 73 provided separately from each other on a substrate 48, and a source electrode 72 and a drain electrode. 73, a semiconductor layer 78 provided in contact with the gate electrode 73, a gate insulating film 79 provided so as to cover the source electrode 72, the drain electrode 73, and the semiconductor layer 78, and a gate insulating film 79 corresponding to the semiconductor layer 78. The gate electrode 80 is provided.
In such a thin film transistor 1, the gate electrode 80 is connected to the scanning line 102, the source electrode 72 is connected to the data line 101, and the drain electrode 73 is connected to the pixel electrode (individual electrode) 103.
Such an electronic device substrate 100 can be manufactured as follows.

<Method for Manufacturing Semiconductor Device>
Hereinafter, a method for manufacturing the electronic device substrate 100 will be described as an example of a method for manufacturing a semiconductor device of the present invention.
Below, it demonstrates focusing on the manufacturing method of the thin-film transistor 1. FIG.
The manufacturing method of the thin film transistor 1 in this embodiment includes a step of forming a source electrode 72 and a drain electrode 73 on a substrate 48 (hereinafter referred to as a source electrode and drain electrode formation step), and a step of forming a semiconductor layer 78 (hereinafter referred to as a source electrode and drain electrode 73). A semiconductor layer forming step), a gate insulating film 79 forming step (hereinafter referred to as a gate insulating film forming step), a gate electrode 80 forming step (hereinafter referred to as a gate insulating film forming step), and a scanning line 102. A step of forming (hereinafter referred to as a scanning line forming step).
Hereinafter, each process will be sequentially described with reference to FIGS. 3 to 7.

  FIG. 3 is a view for explaining a source electrode and drain electrode forming step, a semiconductor layer forming step, a gate insulating film forming step, and a gate electrode forming step in the manufacturing method of the electronic device substrate 100 (substrate with a film) of this embodiment. FIGS. 4 and 5 are diagrams (a plan view and a cross-sectional view) for explaining a scanning line forming step in the manufacturing method of the electronic device substrate 100 (substrate with a film) of this embodiment, and FIG. FIG. 7 is a diagram showing a schematic configuration of a droplet discharge device used in the scanning line forming process, and FIG. 7 is a diagram showing a schematic configuration of a head portion of the droplet discharge device shown in FIG. In the drawings used for the following description, the scale of each part is appropriately changed for convenience of description.

[A1] Source and Drain Electrode Formation Step First, as shown in FIG. 3A, the source electrode 72 and the drain electrode 73 are formed on the substrate 48.
Specifically, first, a substrate 48 is prepared.
Examples of the substrate 48 include a glass substrate, polyimide, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polymethyl methacrylate (PMMA), polycarbonate (PC), polyethersulfone (PES), and aromatic polyester (liquid crystal polymer). Or the like, a plastic substrate (resin substrate), a quartz substrate, a silicon substrate, a gallium arsenide substrate, or the like can be used. In the case where flexibility is given to the thin film transistor, a resin substrate is selected as the substrate 48.

Note that an underlayer may be provided on the substrate 48. The underlayer is provided, for example, for the purpose of preventing diffusion of ions from the surface of the substrate 48 and for the purpose of improving the adhesion (bondability) between the source electrode 72 and the drain electrode 73 and the substrate 48.
The constituent material of the underlayer is not particularly limited, but silicon oxide (SiO ₂ ), silicon nitride (SiN), polyimide, polyamide, a cross-linked insolubilized polymer, or the like is preferably used.

  Next, a conductive film is formed on the substrate 48. This includes, for example, chemical vapor deposition (CVD) such as plasma CVD, thermal CVD, and laser CVD, vacuum deposition, sputtering (low temperature sputtering), dry plating methods such as ion plating, electrolytic plating, immersion plating, and electroless plating. It can be formed by a wet plating method such as a thermal spraying method, a sol-gel method, a MOD method, or a metal foil bonding.

The constituent material of the conductive film (that is, the constituent material of the source electrode 72 or the drain electrode 73) is not particularly limited as long as it has conductivity. For example, Pd, Pt, Au, Ag, W, Ta, Mo , Al, Cr, Ti, Cu or conductive materials such as alloys containing these, conductive oxides such as ITO, FTO, ATO, SnO ₂ , carbon-based materials such as carbon black, carbon nanotubes, fullerenes, polyacetylene, polypyrrole , Conductive polymer materials such as polythiophene such as PEDOT (poly-ethylenedioxythiophene), polyaniline, poly (p-phenylene), polyfluorene, polycarbazole, polysilane, or derivatives thereof, and the like. Or use two or more types in combination Can do. The conductive polymer material is usually used in a state of being doped with a polymer such as iron oxide, iodine, inorganic acid, organic acid, polystyrene sulphonic acid and imparted with conductivity. Among these, as the constituent material of the conductive film, materials mainly composed of Ni, Cu, Co, Au, Pd, Ag, or alloys containing these are preferably used.

  On the conductive film, a resist material is applied and then cured to form a resist layer having a shape corresponding to the shape of the source electrode 72 and the drain electrode 73. Using this resist layer as a mask, unnecessary portions of the conductive film are removed. For removing the conductive film, for example, one or more of physical etching methods such as plasma etching, reactive ion etching, beam etching, and light-assisted etching, and chemical etching methods such as wet etching are used. Can be used in combination.

Then, the source electrode 72 and the drain electrode 73 are obtained by removing the resist layer.
For example, the source electrode 72 and the drain electrode 73 are formed by supplying a conductive material containing conductive particles onto the substrate 48 to form a liquid film, and then post-treating the liquid film as necessary (see FIG. For example, it can be formed by applying heat, infrared irradiation, application of ultrasonic waves, or the like.

In addition, as a method for supplying the conductive material, for example, spin coating method, casting method, micro gravure coating method, gravure coating method, bar coating method, roll coating method, wire bar coating method, dip coating method, spray coating method , Screen printing method, flexographic printing method, offset printing method, ink jet method, microcontact printing method and the like, and one or more of them can be used in combination.
At this time, the data line 101 and the pixel electrode 103 are also formed.

[A2] Semiconductor Layer Formation Step Next, a semiconductor layer 78 is formed so as to fill a gap between the source electrode 72 and the drain electrode 73 as shown in FIG. In the semiconductor layer 78, a region between the source electrode 72 and the drain electrode 73 becomes a channel region.
A method for forming the semiconductor layer 78 is not particularly limited, and a method similar to the method for forming the source electrode 72 and the drain electrode 73 described above can be used.
The constituent material of the semiconductor layer 78 is not particularly limited, and various organic semiconductor materials and various inorganic semiconductor materials can be used.

  Examples of the organic semiconductor material include naphthalene, anthracene, tetracene, pentacene, hexacene, phthalocyanine, perylene, hydrazone, triphenylmethane, diphenylmethane, stilbene, arylvinyl, pyrazoline, triphenylamine, triarylamine, oligothiophene, phthalocyanine or Low molecular organic semiconductor materials such as these derivatives, poly-N-vinylcarbazole, polyvinylpyrene, polyvinylanthracene, polythiophene, polyhexylthiophene, poly (p-phenylenevinylene), polytinylenevinylene, polyarylamine, Pyreneformaldehyde resin, ethylcarbazole formaldehyde resin, fluorene-bithiophene copolymer, fluorene-arylamine copolymer or Examples thereof include polymeric organic semiconductor materials (conjugated polymer materials) such as derivatives, and one or more of these can be used in combination. It is preferable to use a material mainly composed of (conjugated polymer material). The conjugated polymer material has a particularly high carrier mobility due to its unique electron cloud spread. Such a high-molecular organic semiconductor material can be formed by a simple method and can be relatively easily oriented.

  Among these, the organic semiconductor material includes a copolymer containing fluorene and bithiophene such as a fluorene-bithiophene copolymer, a polymer containing an arylamine such as a polyarylamine and a fluorene-arylamine copolymer. Or what has at least 1 sort (s) of these derivatives as a main component is more preferable, and what has at least 1 sort (s) of polyarylamine, a fluorene-bithiophene copolymer, or these derivatives as a main component is preferable. The semiconductor layer 78 composed of such an organic semiconductor material has high water resistance and high oxidation resistance even when temporarily exposed to a high temperature and humidity environment, so that quality deterioration is prevented. It can be stable.

  Examples of the inorganic semiconductor material include silicon such as polycrystalline silicon and amorphous silicon, germanium, gallium arsenide, and the like, and one or more of these can be used in combination. In the case where the semiconductor layer 78 is formed using the droplet discharge device 10 to be described later, for example, liquid silicon containing cyclopentasilane is supplied to the gap between the source electrode 72 and the drain electrode 73 by the droplet discharge device 10. Then, the semiconductor layer 78 can be formed by drying and baking this.

[A3] Gate Insulating Film Formation Step Next, as shown in FIG. 3C, a gate insulating film 79 is formed on the substrate 48 so as to cover the source electrode 72, the semiconductor layer 78, and the drain electrode 73. At that time, if necessary, a highly flat surface is obtained by polishing the gate insulating film 79 or the like.
A method for forming the gate insulating film 79 is not particularly limited, and a method similar to the method for forming the source electrode 72 and the drain electrode 73 described above can be used.

The constituent material of the gate insulating film 79 is preferably an organic material (particularly an organic polymer material). When the gate insulating film 79 is formed using an organic polymer material as a main material, the gate insulating film 79 can be easily formed, and when the semiconductor layer 78 is made of an organic semiconductor material, the gate insulating film 79 and the semiconductor are formed. The adhesion with the layer 78 can also be improved.
Examples of such organic polymer materials include polystyrene, polyimide, polyamideimide, polyvinylphenylene, polycarbonate (PC), acrylic resin such as polymethyl methacrylate (PMMA), and polytetrafluoroethylene (PTFE). Fluorine resin, phenolic resin such as polyvinylphenol or novolac resin, and olefinic resins such as polyethylene, polypropylene, polyisobutylene, polybutene, etc. are used, and one or more of these may be used in combination. it can.

In addition, as a constituent material of the gate insulating film 79, for example, an inorganic insulating material such as SiO ₂ can be used. In this case, the gate insulating film 79 can obtain SiO ₂ from the solution material by applying a solution such as polysilicate, polysiloxane, or polysilazane and heating the coating film in the presence of oxygen or water vapor. it can. Also, after applying a metal alkoxide solution, an inorganic insulating material can be obtained (known as a sol-gel method) by heating it in an oxygen atmosphere.
Needless to say, the constituent material of the gate insulating film 79 may be made of a material other than the above, for example, resin, ceramics, or the like.

  Then, the formed gate insulating film 79 is polished to reduce the film thickness, thereby obtaining a highly flat surface. As a method of reducing the film thickness, for example, a CMP method (chemical mechanical polishing method) can be employed. Specific conditions include, for example, a soft polyurethane pad and an ammonia-based or amine-based alkali. A combination of a polishing agent (slurry) in which silica particles are dispersed in a solution, a pressure of 30000 Pa, a rotation speed of 50 revolutions / minute, and a polishing agent flow rate of 200 sccm can be employed.

As a method for forming a silicon oxide film, in addition to the above-described method, for example, a suitable amount of photosensitive polysilazane is dropped as a liquid material on the substrate 48, and then applied by a spin coating method (for example, 1000 rpm, 20 seconds), A silicon oxide film may be obtained by baking at about 100 ° C.
Further, instead of forming a silicon oxide film using a liquid material, a silicon oxide film may be formed using, for example, a CVD method. When using the CVD method, the plasma excitation CVD method (PECVD method) is particularly suitable, and the following film formation conditions can be applied. For example, tetraethoxysilane (TEOS) and oxygen (O ₂ ) are used as source gases, the flow rates are 200 sccm, 5 slm, the ambient temperature is 350 ° C., the RF power is 1.3 kW, and the pressure is 200 Pa. Thus, the silicon oxide film can be formed at a high film formation rate of about 300 nm / min. Also, monosilane (SiH ₄ ), nitrous oxide (N ₂ O) and argon (Ar) are used as source gases, the flow rates are 160 sccm, 3 slm, 5 slm, the ambient temperature is 400 ° C., the RF power is 800 W, the pressure Even under the condition of 170 Pa, the silicon oxide film can be formed at a high film formation rate of about 300 nm / min.

[A4] Gate Electrode Formation Step Next, as shown in FIG. 3D, a gate electrode 80 is formed on the gate insulating film 79 corresponding to the region between the source electrode 72 and the drain electrode 73.
The gate electrode 80 is not particularly limited, and the same method as the method for forming the source electrode 72 and the drain electrode 73 described above can be used.

Further, as the constituent material of the gate electrode 80, the same material as the source electrode 72 and the drain electrode 73 can be used.
At this time, the scanning line 102 is formed.
In this embodiment, the scanning line 102 is formed separately from the gate electrode 80, but the scanning line 102 may be formed by continuously forming the gate electrode 80 of the adjacent thin film transistor 1.
Through the steps described above, the field effect thin film transistor 1 in which the semiconductor layer 78, the gate insulating film 79, the gate electrode 80, and the like are stacked is obtained.

[A5] Scan Line Formation Step Here, the formation of the scan line 102 will be described in detail with reference to FIGS.
The step of forming the scanning line 102 according to the present embodiment is a step of applying on the substrate 48 first droplets of a liquid material in which the constituent material (film forming material) of the scanning line 102 is dissolved in a solvent or dispersed in a dispersion medium. (Hereinafter referred to as the first droplet applying step), a part of the film forming material in the first droplet applied on the substrate 48 is deposited or aggregated on the substrate 48 to form a solidified portion. A step (hereinafter referred to as a solidified portion forming step) and a step of applying a second droplet of the liquid material on the substrate 48 so as to overlap a part of the first droplet without including the solidified portion (hereinafter referred to as a solidified portion). (Referred to as a second droplet application step) and removing the solvent or the dispersion medium from the first droplet and the second droplet, thereby forming a scanning line 102 as a film having a width smaller than the width of the first droplet. And forming a substrate on the substrate 48 (hereinafter referred to as a film forming step).

<First droplet application step>
First, as shown in FIG. 4A, a first droplet 70 of a liquid material in which a film forming material, that is, a constituent material of the scanning line 102 is dissolved in a solvent or dispersed in a dispersion medium is applied onto the substrate 48.
As a method for applying the first droplet 70 to the substrate 48, a droplet discharge apparatus that employs an inkjet method can be used. The droplet discharge device will be described in detail later.
As the film forming material, that is, the constituent material of the scanning line, the same constituent material as that of the source electrode 72 and the drain electrode 73 described above can be used.

  The solvent or dispersion medium is not particularly limited as long as it can dissolve or disperse the above-described film forming material. For example, nitric acid, sulfuric acid, ammonia, hydrogen peroxide, water, carbon disulfide, carbon tetrachloride, ethylene Inorganic solvents such as carbonate, ketone solvents such as methyl ethyl ketone (MEK), acetone, diethyl ketone, methyl isobutyl ketone (MIBK), methyl isopropyl ketone (MIPK), cyclohexanone, methanol, ethanol, isopropanol, ethylene glycol, diethylene glycol (DEG) ), Alcohol solvents such as glycerin, diethyl ether, diisopropyl ether, 1,2-dimethoxyethane (DME), 1,4-dioxane, tetrahydrofuran (THF), tetrahydropyran (THP), anisole, die Ether solvents such as lenglycol dimethyl ether (diglyme), diethylene glycol ethyl ether (carbitol), cellosolv solvents such as methyl cellosolve, ethyl cellosolve, phenyl cellosolve, aliphatic hydrocarbon solvents such as hexane, pentane, heptane, cyclohexane, Aromatic hydrocarbon solvents such as toluene, xylene and benzene, aromatic heterocyclic solvents such as pyridine, pyrazine, furan, pyrrole, thiophene and methylpyrrolidone, N, N-dimethylformamide (DMF), N, N- Amide solvents such as dimethylacetamide (DMA), halogen compound solvents such as dichloromethane, chloroform, 1,2-dichloroethane, ester solvents such as ethyl acetate, methyl acetate, ethyl formate, dimethyl sulfoxide (DM O), sulfur compound solvents such as sulfolane, nitrile solvents such as acetonitrile, propionitrile, acrylonitrile, various organic solvents such as organic acid solvents such as formic acid, acetic acid, trichloroacetic acid, trifluoroacetic acid, or these A mixed solvent containing can be used.

<Solidification part formation process>
Next, as shown in FIG. 4B, a part of the film forming material in the first droplet 70 applied on the substrate 48 is deposited or aggregated on the substrate 48 to form a solidified portion 71. To do.
A method for forming the solidified portion 71 is not particularly limited as long as a part of the film forming material in the first droplet 70 can be deposited or aggregated on the substrate 48, but a part of the first droplet 70 is formed. It is preferable to carry out by heating locally. Thereby, the solidification part 71 can be formed comparatively easily.

In this case, the heating is preferably performed by laser light irradiation. Thereby, the micro solidified part 71 can be formed comparatively easily. As a result, it is possible to more reliably form a high-definition pattern film and the scanning line 102 on the substrate 48 in a process described later.
The solidifying part 71 is preferably located at the peripheral edge of the first droplet 70. As a result, in the process described later, the first droplet 70 is effectively stretched between the solidified portion 71 and the second droplet 74, so that the first droplet 70 is in a narrower state. can do. As a result, the scanning line 102 having a high-definition pattern can be easily and inexpensively formed on the substrate 48 in the process described later.

  Further, the second droplet 74 may be applied onto the substrate 48 so as to overlap a part of the first droplet 70 on the opposite side of the solidifying portion 71 with respect to the center of the first droplet 70. preferable. As a result, in the process described later, the first droplet 70 is effectively stretched between the solidified portion 71 and the second droplet 74, so that the first droplet 70 is in a narrower state. can do. As a result, the scanning line 102 having a high-definition pattern can be easily and inexpensively formed on the substrate 48 in the process described later.

  Note that such a solidified portion 71 is not limited to being formed after the first droplet 70 is applied on the substrate 48 as described above, and may be formed on the substrate 48 in advance. That is, a solidified portion 71 mainly composed of a film forming material is formed on the substrate 48, and then the first liquid material in which the film forming material is dissolved in a solvent or dispersed in a dispersion medium so as to include the solidified portion 71 is formed. The droplet 70 may be applied on the substrate 48.

<Second droplet application step>
Next, as shown in FIG. 4C, the above-described second droplet 74 of the liquid material is placed on the substrate 48 so as to overlap a part of the first droplet 70 without including the solidified portion 71. By applying, the first droplet 70 is narrowed as shown in FIG. That is, a droplet 75 is obtained. Note that the second droplet 74 may be applied on the substrate 48 so as to be in contact with the periphery of the first droplet 70 without including the solidified portion 71.
In this step, as shown in FIG. 4C, the second droplet 74 is applied on the substrate 48, and the solidified portion 71 is used as a starting point (the first droplet 70 is pinned by the solidified portion 71). It is preferable that the first droplet 70 is deformed so as to extend toward the second droplet 74 side. Thereby, the scanning line 102 having a high-definition pattern can be more easily and inexpensively formed on the substrate 48 in the process described later.

In the present specification, “pinning” refers to a phenomenon in which the shrinkage of the droplet 70 due to drying is suppressed by the solid content deposited or aggregated on the peripheral portion of the droplet 70.
The contact angles of the first droplet 70 and the second droplet 74 with respect to the substrate 48 are preferably 40 to 60 °, and more preferably 45 to 55 °. As a result, the scanning line 102 having a high-definition pattern can be easily and inexpensively formed on the substrate 48.

In order to obtain such a contact angle, surface treatment may be performed on the substrate 48 prior to application of the first droplet 70 and the second droplet 74.
Examples of such surface treatment include a method of forming a self-assembled film (self-assembled monolayer: SAM (Self Assembled Monolayer)) on the substrate 48. A self-assembled film consists of a binding functional group capable of reacting with surface layer atoms of a substrate and other linear molecules, and is formed by orienting a highly oriented compound by the interaction of the linear molecules. Film. Since this self-assembled film is formed by orienting single molecules, the film thickness is extremely thin and the film is uniform at the molecular level. That is, since the same molecule is located on the surface of the film, uniform and excellent liquid repellency can be imparted to the surface of the film.

  An example of the compound having high orientation is fluoroalkylsilane (FAS). When such a compound is used, the compound is oriented so that the fluoroalkyl group is located on the surface of the film to form a self-assembled film, so that uniform liquid repellency is imparted to the surface of the film. As FAS which is a compound which forms such a self-assembled film, heptadecafluoro-1,1,2,2 tetrahydrodecyltriethoxysilane, heptadecafluoro-1,1,2,2 tetrahydrodecyltrimethoxysilane Heptadecafluoro-1,1,2,2 tetrahydrodecyltrichlorosilane, tridecafluoro-1,1,2,2 tetrahydrooctyltriethoxysilane, tridecafluoro-1,1,2,2 tetrahydrooctyltrimethoxysilane , Tridecafluoro-1,1,2,2 tetrahydrooctyltrichlorosilane, trifluoropropyltrimethoxysilane and the like. In use, it is preferable to use one compound alone, but two or more compounds may be used in combination.

FAS is generally represented by the structural formula _{R n -Si-X (4-} n). Here, n represents an integer of 1 to 3, and X is a hydrolyzable group such as a methoxy group, an ethoxy group, or a halogen atom. R is a fluoroalkyl group, and has a structure of (CF ₃ ) (CF ₂ ) x (CH ₂ ) y (where x represents an integer of 0 to 10 and y represents an integer of 0 to 4). In the case where a plurality of R or X are bonded to Si, all of R or X may be the same or different. The hydrolyzable group represented by X forms silanol by hydrolysis, reacts with the hydroxyl group of the base of the substrate P, and binds to the substrate P by a siloxane bond. On the other hand, since R has a fluoro group such as (CF3) on the surface, the base surface of the substrate P is modified to a surface that does not wet (surface energy is low and liquid repellency is high).

The distance between the center of the first droplet 70 and the center of the second droplet 74 is preferably 1 to 80 μm, and more preferably 35 to 55 μm. This makes it possible to more easily and inexpensively form a high-definition pattern film on the substrate.
The diameter of each of the first droplet 70 and the second droplet 74 is preferably 30 to 80 μm, and more preferably 40 to 60 μm. As a result, the scanning line 102 having a high-definition pattern can be easily and inexpensively formed on the substrate 48.

  In the same manner as the application of the second droplet 74 described above, the droplet 76 is applied on the substrate 48 as shown in FIG. 5A to the droplet 75 thus formed. . At this time, the droplet 75 shows the same behavior as the first droplet 70, the droplet 76 behaves like the second droplet 74, and the droplet 75 becomes narrower. By repeating the application of such droplets, linear droplets 77 are formed as shown in FIG.

<Film formation process>
Next, the solvent or dispersion medium is removed from the linear droplets (ie, the first droplet and the second droplet) as shown in FIG. A scanning line 102 is formed as a film.
As described above, even if the size of the droplet applied on the substrate 48 is not reduced, it is narrower than the width of the droplet (first droplet) immediately after being applied on the substrate 48. The scanning line 102 can be formed as a film. Therefore, the scanning line 102 with a high-definition pattern can be easily and inexpensively formed on the substrate 48.
In addition, since the scanning line 102 with a high definition pattern can be formed on the substrate 48 without using a photoresist or the like, the cost of the electronic device substrate 100 can be reduced.

(Droplet discharge device)
Here, based on FIG. 6, FIG. 7, the droplet discharge apparatus used for formation of the droplet mentioned above is demonstrated.
6 includes a base 12, a first moving unit 14, a second moving unit 16, an electronic balance (not shown) that is a weight measuring unit, a head 20, a capping unit 22, and a cleaning unit 24. I have. The operation of the droplet discharge device 10 including the first moving means 14 and the second moving means 16 is controlled by the control device 23. In FIG. 6, the X direction is the left-right direction of the base 12, the Y direction is the front-rear direction, and the Z direction is the up-down direction.

  The first moving means 14 has a pair of guide rails 40, 40 installed on the upper surface of the base 12 and extending in the Y direction, and a slider 42 movable along the guide rails 40, 40. As a driving means for moving the slider 42 along the guide rails 40, 40, for example, a linear motor can be employed. Thereby, the slider 42 can be moved along the Y direction, and the slider 42 can be positioned at an arbitrary position in the Y direction.

  A motor 44 is fixed to the upper surface of the slider 42, and a table 46 is fixed to the rotor of the motor 44. The table 46 is positioned while holding the substrate 48. That is, the substrate 48 can be sucked onto the table 46 by holding the hole 46 </ b> A of the table 46 to a negative pressure by suction holding means (not shown), and the substrate 48 can be held on the table 46. The motor 44 is, for example, a direct drive motor. By energizing the motor 44, the table 46 rotates in the θz direction as the rotor of the motor 44 rotates, and the table 46 can be indexed (rotation indexed). Further, the table 46 is provided with a preliminary discharge area for the head 20 to discard the liquid material or to perform trial driving (preliminary discharge).

  A capping unit 22 and a cleaning unit 24 are provided on the base 12. The capping unit 22 is for capping the ink ejection surface 20P when the droplet ejection apparatus 10 is on standby to prevent the ink ejection surface 20P of the head 20 from drying. The cleaning unit 24 sucks the inside of the nozzles in order to remove clogging of the nozzles in the head 20. The cleaning unit 24 can also wipe the ink discharge surface 20P in order to remove dirt on the ink discharge surface 20P in the head 20.

  Further, support columns 16A and 16A are erected on the rear side portion on the base 12, and a column 16B is installed on the upper ends of the support columns 16A and 16A. And the 2nd moving means 16 is provided in the front surface of the column 16B. The second moving means 16 has a pair of guide rails 62A and 62A arranged along the X direction, and a slider 60 movable along the guide rails 62A and 62A. As a driving means for moving the slider 60 along the guide rails 62A and 62A, for example, a linear motor can be employed. Accordingly, the slider 60 can be moved along the X direction, and the slider 60 can be positioned at an arbitrary position in the X direction.

  The head 20 is provided on the slider 60. Motors 62, 64, 66 and 68 are connected to the head 20. The motor 62 enables the head 20 to move in the Z direction and allows the head 20 to be positioned at an arbitrary position. The motor 64 can swing the head 20 in the β direction around the axis parallel to the Y direction, and can position the head 20 at an arbitrary position. The motor 66 can swing the head 20 in the γ direction around an axis parallel to the X direction, and can position the head 20 at an arbitrary position. The motor 68 can swing the head 20 in the α direction around the axis parallel to the Z direction, and can position the head 20 at an arbitrary position.

  As described above, the substrate 48 can be moved and positioned in the Y direction, and can be swung and positioned in the θz direction. The head 20 can be moved and positioned in the X and Z directions, and can be swung and positioned in the α, β, and γ directions. Accordingly, the droplet discharge device 10 of the present embodiment can accurately control the relative position and posture between the discharge surface 20P of the head 20 and the substrate 48 on the table 46.

  As shown in FIG. 7, the head 20 discharges the liquid material 2 from the nozzle 91. The head 20 employs a piezo method using a piezo element as a liquid ejection method. This piezo method has the advantage that it does not affect the composition of the material and the like because no heat is applied to the liquid. Note that various known techniques such as a method of discharging a liquid by bubbles generated by heating the liquid can be applied as a method of discharging the liquid.

  A head body 90 of the head 20 is formed with a reservoir 95 and a plurality of ink chambers 93 branched from the reservoir 95. The reservoir 95 is a flow path for supplying the liquid material 2 to each ink chamber 93. Further, a nozzle plate 20 </ b> A constituting the ejection surface 20 </ b> P is attached to the lower end surface of the head body 90. In the nozzle plate 20 </ b> A, a plurality of nozzles 91 for discharging the liquid material 2 are formed corresponding to the ink chambers 93. An ink flow path is formed from each ink chamber 93 toward the corresponding nozzle 91.

  A diaphragm 94 is attached to the upper end surface of the head main body 90. The diaphragm 94 constitutes a wall surface of each ink chamber 93. Piezo elements 92 are provided outside the diaphragm 94 so as to correspond to the ink chambers 93. The piezo element 92 is obtained by sandwiching a piezoelectric material such as quartz with a pair of electrodes (not shown). The pair of electrodes is connected to the drive circuit 99.

  When a voltage is applied from the drive circuit 99 to the piezo element 92, the piezo element 92 expands or contracts. When the piezo element 92 contracts and deforms, the pressure in the ink chamber 93 decreases, and the liquid material 2 flows from the reservoir 95 into the ink chamber 93. On the other hand, when the piezo element 92 expands and deforms, the pressure in the ink chamber 93 increases and the liquid material 2 is discharged from the nozzle 91. Note that the amount of deformation of the piezoelectric element 92 can be controlled by changing the voltage applied to the piezoelectric element 92. Further, the deformation speed of the piezo element 92 can be controlled by changing the frequency of the voltage applied to the piezo element 92. That is, the discharge condition of the liquid material 2 can be controlled by controlling the voltage applied to the piezo element 92.

[Electronics]
Next, an electronic device manufactured using the present invention will be described with reference to FIG.
FIG. 8 is a perspective view showing a configuration of a mobile phone (including PHS) which is an example of an electronic apparatus manufactured using the present invention.
In this figure, a cellular phone 1200 includes a plurality of operation buttons 1202, an earpiece 1204, an earpiece 1206, and a display unit 1000. The display unit 1000 includes the electronic device substrate 100 described above. Such an electronic device has excellent characteristics because it is formed using the method for manufacturing a film-coated substrate of the present invention.

Further, as long as the electronic device includes the above-described active matrix device, the electronic device may be a semi-finished product having a form that can be transferred by a commercial transaction such as a panel constituting the display unit 1000, for example, a liquid crystal display device, an organic EL device, an electric device, etc. An electrophoretic display device is included.
The technical scope of the present invention is not limited to the above-described embodiments, and includes various modifications made to the above-described embodiments without departing from the spirit of the present invention. That is, the specific materials and configurations described in the embodiments are merely examples, and can be changed as appropriate.
For example, in the above-described embodiment, the case where the film formed on the substrate is used as the scanning line has been described. However, the film formed on the substrate can be used for other electric wirings, electrodes, and the like.

It is a block diagram which shows the structure of the board | substrate with a film | membrane concerning embodiment of this invention. It is a figure (longitudinal section and a top view) showing composition of a thin film transistor with which a substrate with a film of an embodiment of the present invention is provided. It is a figure (sectional drawing) for demonstrating the manufacturing method of the board | substrate with a film | membrane concerning embodiment of this invention. It is a figure (plan view) for demonstrating the manufacturing method of the board | substrate with a film | membrane concerning embodiment of this invention. It is a figure (plan view) for demonstrating the manufacturing method of the board | substrate with a film | membrane concerning embodiment of this invention. It is a figure which shows schematic structure of the droplet discharge apparatus used for the 1st droplet provision process and the 2nd droplet provision process in the manufacturing method of the board | substrate with a film concerning embodiment of this invention. It is a figure which shows schematic structure of the head part of the droplet discharge apparatus shown in FIG. It is a perspective view which shows the structure of the mobile telephone (PHS is also included) which is an example of the electronic device manufactured using this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Thin film transistor 10 ... Droplet discharge device 12 ... Base 14 ... 1st moving means 16 ... 2nd moving means 16A ... Support | pillar 16B ... Column 2 ... Droplet material 20 ... Head 20A ... Nozzle plate 20P …… Ink ejection surface 22 …… Capping unit 23 …… Control device 24 …… Cleaning unit 40 …… Guide rail 42 …… Slider 44 …… Motor 46 …… Table 46A …… Hole 48 …… Substrate 60… ... Slider 62 ... Motor 62A ... Guide rail 64, 66, 68 ... Motor 70 ... Droplet 71 ... Solidification part 72 ... Source electrode 73 ... Drain electrode 74 ... Second drop 75, 76 , 77... Liquid droplet 76... Second film 78... Semiconductor layer 79... Gate insulating film 80. ... Head body 91 ... Nozzle 92 ... Piezo element 93 ... Ink chamber 94 ... Diaphragm 95 ... Reservoir 99 ... Drive circuit 100 ... Substrate for electronic device (substrate with film) 101 ... Data line 102 ... ... Scanning line 103 ... Pixel electrode 1000 ... Display unit 1200 ... Mobile phone 1202 ... Operation buttons 1204 ... Earpiece 1206 ... Mouthpiece 2001 ... MOS transistor

Claims (11)

Applying a first droplet of a liquid material in which a film forming material is dissolved in a solvent or dispersed in a dispersion medium onto the substrate;
A step of depositing or agglomerating a part of the film forming material in the first droplet applied on the substrate to form a solidified portion;
By applying a second droplet of the liquid material on the substrate so as not to include the solidified portion and to overlap a part of the first droplet or to be in contact with a peripheral edge of the first droplet Narrowing the first droplet; and
Forming a film on the substrate by removing a solvent or a dispersion medium from the first droplet and the second droplet, and a method of manufacturing a substrate with a film.   The method for producing a film-coated substrate according to claim 1, wherein the solidified portion is formed by locally heating a part of the first droplet.   The method for manufacturing a film-coated substrate according to claim 2, wherein the heating is performed by laser light irradiation. Forming a solidified portion mainly composed of a film forming material on a substrate;
Applying a first droplet of a liquid material in which the film-forming material is dissolved in a solvent or dispersed in a dispersion medium so as to include the solidified portion;
By applying a second droplet of the liquid material on the substrate so as not to include the solidified portion and to overlap a part of the first droplet or to be in contact with a peripheral edge of the first droplet Narrowing the first droplet; and
Forming a film on the substrate by removing a solvent or a dispersion medium from the first droplet and the second droplet, and a method of manufacturing a substrate with a film.   The film-attached film according to claim 1, wherein the second droplet is applied on the substrate to deform the first droplet to extend toward the second droplet from the solidified portion. A method for manufacturing a substrate.   The method for manufacturing a film-coated substrate according to claim 1, wherein the solidified portion is located at a peripheral portion of the first droplet.   The second droplet is overlapped with a part of the first droplet on the opposite side of the solidification portion with respect to the center of the first droplet, or is in contact with the periphery of the first droplet The manufacturing method of the board | substrate with a film | membrane in any one of Claim 1 thru | or 6 provided on the said board | substrate.   The method for manufacturing a film-coated substrate according to any one of claims 1 to 7, wherein a contact angle of each of the first droplet and the second droplet with respect to the substrate is 40 to 60 °.   The method for manufacturing a film-coated substrate according to claim 1, wherein a distance between the center of the first droplet and the center of the second droplet is 1 to 80 μm.   The method for manufacturing a film-coated substrate according to claim 1, wherein each of the first droplet and the second droplet has a diameter of 30 to 80 μm. 11. A method for manufacturing an electronic device, comprising the step of manufacturing a substrate with a film using the method for manufacturing a substrate with a film according to claim 1, wherein the electronic device is manufactured through the step. .

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