JP2006278743A - Solid state imaging device - Google Patents

Solid state imaging device Download PDF

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JP2006278743A
JP2006278743A JP2005095867A JP2005095867A JP2006278743A JP 2006278743 A JP2006278743 A JP 2006278743A JP 2005095867 A JP2005095867 A JP 2005095867A JP 2005095867 A JP2005095867 A JP 2005095867A JP 2006278743 A JP2006278743 A JP 2006278743A
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state imaging
solid
substrate
imaging device
frame
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Hisaki Tsuboi
央樹 坪井
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Konica Minolta Inc
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Konica Minolta Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solid state imaging device formed into a highly airtight package. <P>SOLUTION: The solid state imaging device comprises a flat plate-shaped substrate 2, a solid state imaging element 3 mounted on this substrate 2, a frame 4 built up at the predetermined height on the substrate 2 in a fashion to surround the solid state imaging element 3, and a lid 5 which is joined to the top edge of the frame 4 with a given space kept away from a mounting plane of the solid state imaging element 3 on the substrate 2 and used for the hermetic sealing of the solid state imaging element 3 on the substrate 2 in this given space. The outer edge of the frame 4 is in inclined form so that it may broaden toward the substrate 2 from the top edge. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、CCD(Charge Coupled Device)やCMOS(Complimentary Metal Oxide Semiconductor)センサなどの受光素子である固体撮像素子を備えた固体撮像装置に関するものである。   The present invention relates to a solid-state imaging device including a solid-state imaging device which is a light-receiving element such as a CCD (Charge Coupled Device) or a CMOS (Complementary Metal Oxide Semiconductor) sensor.

フォトダイオード等の光電変換素子と、その光電変換素子で発生した光電荷を出力信号線へ取り出す手段とを含む画素をマトリクス状(行列状)に配してなる二次元固体撮像素子は種々の用途に供されている。   2. Description of the Related Art A two-dimensional solid-state imaging device in which pixels including a photoelectric conversion element such as a photodiode and a means for taking out photoelectric charges generated by the photoelectric conversion element to an output signal line are arranged in a matrix (matrix) It is offered to.

ところで、このような固体撮像素子は、光電変換素子で発生した光電荷を読み出す(取り出す)手段によってCCD型とMOS型に大きく分けられる。CCD型は光電荷をポテンシャルの井戸に蓄積しつつ、転送するようになっており、ダイナミックレンジが狭いという欠点がある。一方MOS型はフォトダイオードのpn接合容量に蓄積した電荷を、MOSトランジスタを通して直接読み出すようになっていた。   By the way, such a solid-state imaging device is roughly classified into a CCD type and a MOS type by means for reading (extracting) the photoelectric charge generated in the photoelectric conversion element. The CCD type is designed to transfer photocharges while accumulating them in a potential well, and has a drawback that the dynamic range is narrow. On the other hand, in the MOS type, the charge accumulated in the pn junction capacitance of the photodiode is directly read out through the MOS transistor.

このような固体撮像素子は、外気から保護するために、パッケージなどによって封止される。このようにパッケージ内に封止された固体撮像素子を有する固体撮像装置を、図5に示す。図5の固体撮像装置は、セラミックや樹脂などよりなる基板1上に光半導体素子(固体撮像素子)2を載置し、その周りを囲むように枠体3を基板1上に立設すると共に、枠体3を透光性の蓋部4で覆って光半導体素子(固体撮像素子)2が密封されたパッケージを構成している。   Such a solid-state imaging device is sealed by a package or the like in order to protect it from the outside air. A solid-state imaging device having a solid-state imaging device thus sealed in a package is shown in FIG. In the solid-state imaging device of FIG. 5, an optical semiconductor element (solid-state imaging element) 2 is placed on a substrate 1 made of ceramic, resin, or the like, and a frame 3 is erected on the substrate 1 so as to surround it. The frame 3 is covered with a translucent lid 4 to constitute a package in which the optical semiconductor element (solid-state imaging element) 2 is sealed.

これにより、パッケージ内の空間の気密性が保たれ、光半導体素子(固体撮像素子)2を外気から保護することができる。また、光半導体素子(固体撮像素子)2に電力供給を行ったり、出力される電気信号を送出するために光半導体素子(固体撮像素子)2のパッド7に接続されたワイヤ8が、パッケージ内部で且つ光半導体素子(固体撮像素子)2の周囲に設けられた電極6に接続される(例えば、特許文献1)。   Thereby, the airtightness of the space in the package is maintained, and the optical semiconductor element (solid-state imaging element) 2 can be protected from the outside air. Further, a wire 8 connected to the pad 7 of the optical semiconductor element (solid-state imaging device) 2 for supplying electric power to the optical semiconductor element (solid-state imaging device) 2 or sending an output electric signal is provided inside the package. And connected to an electrode 6 provided around the optical semiconductor element (solid-state imaging element) 2 (for example, Patent Document 1).

特開2004−95595号公報JP 2004-95595 A

しかしながら、特許文献1に記載の技術は、基板に対して枠体がほぼ垂直に立設されているので、本パッケージを製造する過程において熱を加えたときに、ガラスなどによりなる蓋部と樹脂などの枠体とでは熱膨張係数が異なるため、接続部分が剥離しやすくなっていた。   However, in the technique described in Patent Document 1, since the frame is erected substantially vertically with respect to the substrate, when heat is applied in the process of manufacturing this package, a lid made of glass or the like and resin Since the coefficient of thermal expansion is different from that of the frame body, the connecting portion is easily peeled off.

また、そのような熱膨張係数の差による蓋部と枠体との剥離を防ぐために、接続部分にリング状枠体を設けた構造も考えられるが、基板に対して枠体がほぼ垂直に立設されているので、リング状枠体が基板上に落下してしまい、適正な位置にリング状枠体を設置する労力が多大であった。   In order to prevent the lid and the frame from peeling off due to such a difference in thermal expansion coefficient, a structure in which a ring-shaped frame is provided at the connection portion is also conceivable. However, the frame is almost vertical to the substrate. Therefore, the ring-shaped frame is dropped on the substrate, and the labor for installing the ring-shaped frame at an appropriate position is great.

本発明は、以上の問題点に鑑みてなされたものであって、その目的は、蓋部と枠体との熱膨張係数の差に起因する剥離の影響を低減して、気密パッケージ化された固体撮像装置を提供することにある。   The present invention has been made in view of the above problems, and the object thereof is to reduce the influence of peeling due to the difference in the thermal expansion coefficient between the lid and the frame, and to achieve an airtight package. The object is to provide a solid-state imaging device.

上記課題を解決するための、請求項1記載の発明に係る固体撮像装置は、平板形状をなす基板と、その基板上に実装された固体撮像素子と、その固体撮像素子を囲む態様で前記基板上に所定の高さで形成された枠体と、前記基板の固体撮像素子実装面との間に所定の空間を確保した状態で前記枠体の上端部に接合され、前記基板上の固体撮像素子を前記所定の空間内に気密封止してなる蓋部とを有する固体撮像装置であって、前記枠体の外縁形状は、前記上端部から前記基板に向かって広がるように傾斜していることを特徴とする。   In order to solve the above-mentioned problem, a solid-state imaging device according to claim 1 is a substrate having a flat plate shape, a solid-state imaging device mounted on the substrate, and a substrate surrounding the solid-state imaging device. Solid imaging on the substrate is bonded to the upper end of the frame with a predetermined space secured between the frame formed at a predetermined height on the solid imaging element mounting surface of the substrate. A solid-state imaging device having a lid portion formed by hermetically sealing an element in the predetermined space, wherein an outer edge shape of the frame body is inclined so as to spread from the upper end portion toward the substrate. It is characterized by that.

上記課題を解決するための、請求項2記載の発明に係る固体撮像装置は、請求項1に記載の固体撮像装置において、前記枠体の内壁が基板に対してほぼ垂直であることを特徴とする。   In order to solve the above-mentioned problem, the solid-state imaging device according to claim 2 is characterized in that in the solid-state imaging device according to claim 1, the inner wall of the frame is substantially perpendicular to the substrate. To do.

上記課題を解決するための、請求項3記載の発明に係る固体撮像装置は、請求項1に記載の固体撮像装置において、前記枠体の内壁が前記外縁形状に沿って傾斜していることを特徴とする。   In order to solve the above-mentioned problem, the solid-state imaging device according to claim 3 is the solid-state imaging device according to claim 1, wherein the inner wall of the frame body is inclined along the outer edge shape. Features.

上記課題を解決するための、請求項4記載の発明に係る固体撮像装置は、請求項1〜3の何れかに記載の固体撮像装置において、前記蓋部及び前記枠体の上端部に亘って前記蓋部と前記枠体との剥離を防ぐためのリング状枠体が設置され、そのリング状枠体の熱膨張係数が前記枠体の熱膨張係数よりも小であることを特徴とする。   In order to solve the above-mentioned problem, a solid-state imaging device according to a fourth aspect of the present invention is the solid-state imaging device according to any one of the first to third aspects, wherein the lid and the upper end of the frame body are covered. A ring-shaped frame for preventing peeling between the lid and the frame is installed, and the thermal expansion coefficient of the ring-shaped frame is smaller than the thermal expansion coefficient of the frame.

上記課題を解決するための、請求項5記載の発明に係る固体撮像装置は、請求項1〜4の何れかに記載の固体撮像装置において、前記枠体の外縁の一部にチャッキング用の凹部が形成されたことを特徴とする。   In order to solve the above-mentioned problem, a solid-state imaging device according to claim 5 is the solid-state imaging device according to any one of claims 1 to 4, wherein the solid-state imaging device is used for chucking a part of the outer edge of the frame body. A recess is formed.

本発明によれば、枠体が基板に対してほぼ垂直に立設された形状ではなく、枠体の外縁部の形状を基板に対して広がるような傾斜形状としたので、蓋部と枠体との熱膨張係数の差で発生した応力による蓋部と枠体との剥離を軽減し、又は防止することができる固体撮像装置を提供することができる。   According to the present invention, the shape of the outer edge portion of the frame body is an inclined shape that spreads with respect to the substrate, not the shape of the frame body standing substantially perpendicular to the substrate. It is possible to provide a solid-state imaging device capable of reducing or preventing the separation between the lid and the frame body due to the stress generated by the difference in thermal expansion coefficient between the lid and the frame.

以下、本発明に係る固体撮像装置の一実施形態につき、図面を参照して説明する。   Hereinafter, an embodiment of a solid-state imaging device according to the present invention will be described with reference to the drawings.

図1は、本発明に係る固体撮像装置の一実施形態における構成を示す断面図である。図1に示すように、本実施形態の固体撮像装置1は、主として、基板2、固体撮像素子3、枠体4及び透明なガラスよりなる蓋部5から構成されている。   FIG. 1 is a cross-sectional view showing a configuration in an embodiment of a solid-state imaging device according to the present invention. As shown in FIG. 1, the solid-state imaging device 1 of the present embodiment mainly includes a substrate 2, a solid-state imaging device 3, a frame body 4, and a lid portion 5 made of transparent glass.

基板2は、平板構造をなし、材料的には発塵の少ないガラスエポキシ基板を採用している。また基板2上には電極6がパターン形成されている。この電極6は、例えば銅箔(銅電極)にAuメッキされたもので、固体撮像素子3の周辺部に近接配置されている。一方、この電極6は、図示はしないが、基板2の素子実装面と反対側の面(図中下面)との間に設けられたVIAホールなどによって延出され、その延出部分を基板裏面に設置された回路などに接続されている。   The substrate 2 has a flat plate structure and employs a glass epoxy substrate that generates less dust. An electrode 6 is patterned on the substrate 2. The electrode 6 is, for example, Au plated on a copper foil (copper electrode), and is disposed in the vicinity of the periphery of the solid-state imaging device 3. On the other hand, although not shown, this electrode 6 is extended by a VIA hole or the like provided between the element mounting surface of the substrate 2 and the opposite surface (lower surface in the figure), and the extended portion is connected to the back surface of the substrate. It is connected to the circuit installed in the.

固体撮像素子3は、CCD素子等からなるもので、基板2の上面中央部に実装されている。固体撮像素子3の上面周縁部には複数の電極部(図示せず)が形成されており、これらの電極部から引き出された金線等のボンディングワイヤ8が電極6の一端部6aに接続されている。   The solid-state imaging element 3 is composed of a CCD element or the like, and is mounted on the center of the upper surface of the substrate 2. A plurality of electrode portions (not shown) are formed on the peripheral edge of the upper surface of the solid-state imaging device 3, and a bonding wire 8 such as a gold wire drawn from these electrode portions is connected to one end portion 6 a of the electrode 6. ing.

枠体4は、基板2上の固体撮像素子3を取り囲むように形成されている。さらに詳述すると、枠体4は、電極6の一端部6aとボンディングワイヤ8との接続部分よりも外側でかつ電極6の一部を覆うように基板2上に形成されている。また、枠体4の外縁形状は、従来のように基板2に対してほぼ垂直ではなく、後述する蓋部が設置される枠体4の上面から基板2に向かって広がるように傾斜したテーパ形状をなしている。一方、枠体4の内壁(基板2、蓋部5と共に固体撮像素子3が密封された空間を構成する面)は、基板2に対してほぼ垂直に形成されている。   The frame 4 is formed so as to surround the solid-state imaging device 3 on the substrate 2. More specifically, the frame 4 is formed on the substrate 2 so as to cover a part of the electrode 6 outside the connecting portion between the one end 6 a of the electrode 6 and the bonding wire 8. Further, the outer edge shape of the frame body 4 is not substantially perpendicular to the substrate 2 as in the prior art, but is a tapered shape that is inclined so as to spread from the upper surface of the frame body 4 on which a lid portion described later is installed toward the substrate 2. I am doing. On the other hand, the inner wall of the frame 4 (the surface constituting the space in which the solid-state imaging device 3 is sealed together with the substrate 2 and the lid 5) is formed substantially perpendicular to the substrate 2.

枠体4の材料としては、基板2及び蓋部5との接着性が良好でかつ熱硬化性又は紫外線硬化性を有する樹脂、例えばシリコンゴムなどのシリコン系樹脂、エポキシ系樹脂、アクリル系樹脂などを採用することができる。また、熱応力の緩和という点では適度な弾性を有するシリコン系樹脂等が好ましく、耐湿性という点ではエポキシ系樹脂、アクリル系樹脂、アルミニウム、(又は合金)、ポリカーボネイト等が好ましい。   Examples of the material of the frame 4 include a resin having good adhesion to the substrate 2 and the lid 5 and thermosetting or ultraviolet curable, for example, a silicon resin such as silicon rubber, an epoxy resin, an acrylic resin, and the like. Can be adopted. Further, a silicon resin having moderate elasticity is preferable in terms of relaxation of thermal stress, and an epoxy resin, an acrylic resin, aluminum, (or alloy), polycarbonate, and the like are preferable in terms of moisture resistance.

蓋部5は、基板2の素子実装面との間に所定の空間、この場合は固体撮像素子3から引き出されたボンディングワイヤ8と位置的に干渉しない程度の空間を確保した状態で、枠体4の上端部に接合されている。具体的には、枠体4の内壁に形成され、内方に突出した桁部に載置される態様で接合されている。   The lid 5 has a predetermined space between the element mounting surface of the substrate 2 and, in this case, a frame that secures a space that does not interfere with the bonding wires 8 drawn from the solid-state imaging device 3. 4 is joined to the upper end portion. Specifically, it is formed on the inner wall of the frame body 4 and joined in such a manner that it is placed on a girder protruding inward.

この蓋部5は、周知の中空パッケージ構造に採用されているシールガラスと同様のもので、この蓋部5にて枠体4の開口部を塞ぐことにより、上述した所定の空間内に固体撮像素子3が気密封止されている。   The lid 5 is the same as the seal glass employed in the well-known hollow package structure, and the lid 5 closes the opening of the frame body 4 so that the solid-state imaging is performed in the predetermined space described above. The element 3 is hermetically sealed.

ここで、本実施形態の固体撮像装置1を製造する際の手順を簡単に説明する。まず、基板上に電極6を一体形成してなる基板2を作製し、この基板2上にダイボンド剤を介して固体撮像素子3を接合固定する。   Here, a procedure for manufacturing the solid-state imaging device 1 of the present embodiment will be briefly described. First, the substrate 2 formed by integrally forming the electrode 6 on the substrate is manufactured, and the solid-state imaging device 3 is bonded and fixed to the substrate 2 via a die bonding agent.

次に、固体撮像素子3の電極部31と電極6の一端部6aとをボンディングワイヤ8で接続する。   Next, the electrode part 31 of the solid-state imaging device 3 and the one end part 6 a of the electrode 6 are connected by the bonding wire 8.

次いで、基板2上の固体撮像素子3を囲むようにして、その周囲に高粘度の樹脂を塗布し、これによって基板2上に所定高さの枠体4を形成する。このとき枠体4の高さ寸法は、後述する蓋部5との接合面を確保するために、最終的な規定高さよりも若干高めに設定しておく。   Next, a high-viscosity resin is applied around the solid-state imaging device 3 on the substrate 2, thereby forming a frame 4 having a predetermined height on the substrate 2. At this time, the height of the frame body 4 is set slightly higher than the final specified height in order to secure a joint surface with the lid 5 described later.

続いて、枠体4の上端部に、接着剤を介して蓋部5を接合し、枠体4の高さ寸法が最終的な規定高さに調整される。これにより図1に示した固体撮像装置1が得られる。   Subsequently, the lid 5 is joined to the upper end portion of the frame body 4 via an adhesive, and the height dimension of the frame body 4 is adjusted to the final specified height. Thereby, the solid-state imaging device 1 shown in FIG. 1 is obtained.

なお、本実施形態においては、枠体4の形成にあたって基板2上に高粘度の樹脂を塗布するようにしたが、これ以外にも、例えば半硬化状態の樹脂を予め枠状に成形しておき、これを基板2と蓋部5との間に挟み込んで双方を同時に熱圧着するようにしてもよい。   In the present embodiment, a high-viscosity resin is applied onto the substrate 2 when forming the frame body 4, but in addition to this, for example, a semi-cured resin is previously formed into a frame shape. Alternatively, this may be sandwiched between the substrate 2 and the lid 5 and both may be thermocompression bonded simultaneously.

また、枠体4の内壁が基板に対してほぼ垂直となるように形成されているので、枠体4と基板2との接合面積が従来よりも大きくなり、枠体4の外端部(枠体4の外縁の端部)から枠体4の内端部(枠体4の内壁と基板2との設置部分)までの距離が長くなるので、固体撮像素子3が密封された空間に湿気(水分)が浸潤しにくくなり、固体撮像素子3の密閉性、防水性が向上する。   Further, since the inner wall of the frame body 4 is formed so as to be substantially perpendicular to the substrate, the bonding area between the frame body 4 and the substrate 2 becomes larger than before, and the outer end portion of the frame body 4 (frame Since the distance from the outer edge of the body 4 to the inner edge of the frame 4 (the portion where the inner wall of the frame 4 and the substrate 2 are installed) is increased, moisture (in the space where the solid-state imaging device 3 is sealed) Moisture) is less likely to infiltrate, and the hermeticity and waterproofness of the solid-state imaging device 3 are improved.

一方、本実施形態では、図2に示すように、蓋部5と枠体4との熱膨張係数の差によって生じる応力を低減するため、及び蓋部5の外周囲での密閉性を確保するために、蓋部5及び枠体4の上端部に亘って、L字型の断面形状をなすリング状枠体7が蓋部5及び枠体4を覆うように設置されてもよい。そして、このリング状枠体7の熱膨張係数は枠体4の熱膨張係数よりも小であることが望ましい。   On the other hand, in this embodiment, as shown in FIG. 2, in order to reduce the stress caused by the difference in thermal expansion coefficient between the lid 5 and the frame body 4, and to ensure hermeticity in the outer periphery of the lid 5. Therefore, a ring-shaped frame body 7 having an L-shaped cross section may be installed so as to cover the lid section 5 and the frame body 4 over the upper end portions of the lid section 5 and the frame body 4. The thermal expansion coefficient of the ring-shaped frame 7 is preferably smaller than the thermal expansion coefficient of the frame 4.

このように、枠体4の熱膨張係数よりも小の熱膨張係数を呈するリング状枠体7が設けられることによって、蓋部5の外周囲及び枠体4の上端部を締め付け、蓋部5と枠体4との剥離を防止することができる。   In this way, by providing the ring-shaped frame 7 that exhibits a thermal expansion coefficient smaller than the thermal expansion coefficient of the frame 4, the outer periphery of the lid 5 and the upper end of the frame 4 are tightened, and the lid 5 And the frame 4 can be prevented from peeling off.

さらに、本発明に係る固体撮像装置の他の実施形態として、図3に示すように、枠体4の内壁が、枠体4の外縁形状に沿って傾斜していてもよい。すなわちこれは、従来の固体撮像装置の構成において基板2に対して垂直に立設された枠体4が内方に傾斜した態様であり、前述の実施形態との差異点は、内壁が基板2に対して垂直に形成されているのではなく、外縁部と基板2とのなす角度とほぼ同じ角度で内壁が傾斜しているのである。   Furthermore, as another embodiment of the solid-state imaging device according to the present invention, as shown in FIG. 3, the inner wall of the frame body 4 may be inclined along the outer edge shape of the frame body 4. In other words, this is an aspect in which the frame 4 standing vertically with respect to the substrate 2 in the configuration of the conventional solid-state imaging device is inclined inward, and the difference from the above-described embodiment is that the inner wall is the substrate 2. The inner wall is inclined at substantially the same angle as the angle formed between the outer edge and the substrate 2.

このように、枠体4の内壁が、枠体4の外縁形状に沿って傾斜していることによって、固体撮像素子3が密閉される空間を広くとることができる。特に、ワイヤーボンディング領域を広くとることができる。   As described above, since the inner wall of the frame body 4 is inclined along the outer edge shape of the frame body 4, the space in which the solid-state imaging device 3 is sealed can be widened. In particular, a wide wire bonding area can be taken.

加えて、本発明に係る固体撮像装置の他の実施形態として、図4に示すように、固体撮像装置の製造工程においてチャッキング用の治具が固体撮像装置を保持するための凹部9を枠体4の外縁部に形成してもよい。このような凹部9が枠体4に形成されていることによって、チャッキング用の治具が固体撮像装置を保持する際に、保持する箇所が定まっていないことに起因する固体撮像装置の破損を避けることができるだけでなく、固体撮像装置をスムーズに保持できるので、歩留まりを向上させることができる。   In addition, as another embodiment of the solid-state imaging device according to the present invention, as shown in FIG. 4, a chucking jig holds a recess 9 for holding the solid-state imaging device in the manufacturing process of the solid-state imaging device. You may form in the outer edge part of the body 4. FIG. By forming such a recess 9 in the frame 4, when the chucking jig holds the solid-state image pickup device, the solid-state image pickup device is damaged due to an unspecified place to hold. Not only can it be avoided, but the solid-state imaging device can be held smoothly, so that the yield can be improved.

なお、上記実施形態では、基板2にガラスエポキシ基板を採用するようにしたが、これ以外にも例えばセラミック基板等を採用することも可能である。   In the above embodiment, a glass epoxy substrate is used as the substrate 2, but a ceramic substrate or the like can also be used in addition to this.

また、この他であっても、本発明に係る技術的思想を逸脱しない範囲であれば、設計等に応じて種々の変更が可能である。   In addition, various modifications can be made according to the design or the like as long as they do not depart from the technical idea of the present invention.

本発明に係る固体撮像装置の一実施形態における構成を示す断面図。1 is a cross-sectional view illustrating a configuration in an embodiment of a solid-state imaging device according to the present invention. 本発明に係る固体撮像装置の一実施形態においてリング状枠体を設置した構成を示す断面図。Sectional drawing which shows the structure which installed the ring-shaped frame in one Embodiment of the solid-state imaging device which concerns on this invention. 本発明に係る固体撮像装置の他の実施形態における構成を示す断面図。Sectional drawing which shows the structure in other embodiment of the solid-state imaging device concerning this invention. 本発明に係る固体撮像装置の他の実施形態における構成を示す断面図。Sectional drawing which shows the structure in other embodiment of the solid-state imaging device concerning this invention. 従来の固体撮像装置の構成を示す断面図。Sectional drawing which shows the structure of the conventional solid-state imaging device.

符号の説明Explanation of symbols

1 固体撮像装置
2 基板
3 固体撮像素子
4 枠体
5 蓋部
6 電極
7 リング状枠体
8 ボンディングワイヤ
9 凹部
DESCRIPTION OF SYMBOLS 1 Solid-state imaging device 2 Board | substrate 3 Solid-state image sensor 4 Frame body 5 Cover part 6 Electrode 7 Ring-shaped frame body 8 Bonding wire 9 Recessed part

Claims (5)

平板形状をなす基板と、
その基板上に実装された固体撮像素子と、
その固体撮像素子を囲む態様で前記基板上に所定の高さで形成された枠体と、
前記基板の固体撮像素子実装面との間に所定の空間を確保した状態で前記枠体の上端部に接合され、前記基板上の固体撮像素子を前記所定の空間内に気密封止してなる蓋部とを有する固体撮像装置であって、
前記枠体の外縁形状は、前記上端部から前記基板に向かって広がるように傾斜していることを特徴とする固体撮像装置。
A flat substrate,
A solid-state image sensor mounted on the substrate;
A frame formed at a predetermined height on the substrate in a manner surrounding the solid-state imaging device;
Joined to the upper end of the frame in a state where a predetermined space is secured between the solid-state image sensor mounting surface of the substrate, and the solid-state image sensor on the substrate is hermetically sealed in the predetermined space. A solid-state imaging device having a lid,
An outer edge shape of the frame body is inclined so as to spread from the upper end portion toward the substrate.
前記枠体の内壁が基板に対してほぼ垂直であることを特徴とする請求項1に記載の固体撮像装置。   The solid-state imaging device according to claim 1, wherein an inner wall of the frame is substantially perpendicular to the substrate. 前記枠体の厚さが一様であることを特徴とする請求項1に記載の固体撮像装置。   The solid-state imaging device according to claim 1, wherein the frame has a uniform thickness. 前記蓋部及び前記枠体の上端部に亘って前記蓋部と前記枠体との剥離を防ぐためのリング状枠体が設置され、そのリング状枠体の熱膨張係数が前記枠体の熱膨張係数よりも小であることを特徴とする請求項1〜3の何れかに記載の固体撮像装置。   A ring-shaped frame for preventing peeling of the lid and the frame is installed over the lid and the upper end of the frame, and the coefficient of thermal expansion of the ring-shaped frame is the heat of the frame. The solid-state imaging device according to claim 1, wherein the solid-state imaging device is smaller than an expansion coefficient. 前記枠体の外縁にチャッキング用の凹部が形成されたことを特徴とする請求項1〜4の何れかに記載の固体撮像装置。
The solid-state imaging device according to claim 1, wherein a recess for chucking is formed on an outer edge of the frame body.
JP2005095867A 2005-03-29 2005-03-29 Solid state imaging device Pending JP2006278743A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234977A (en) * 2006-03-02 2007-09-13 Citizen Electronics Co Ltd Semiconductor package
JP2009289830A (en) * 2008-05-27 2009-12-10 Mitsui Chemicals Inc Package for semiconductor element mounting
JP2014515553A (en) * 2011-05-19 2014-06-30 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Optoelectronic device and method of manufacturing optoelectronic device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234977A (en) * 2006-03-02 2007-09-13 Citizen Electronics Co Ltd Semiconductor package
JP2009289830A (en) * 2008-05-27 2009-12-10 Mitsui Chemicals Inc Package for semiconductor element mounting
JP2014515553A (en) * 2011-05-19 2014-06-30 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Optoelectronic device and method of manufacturing optoelectronic device
US9281301B2 (en) 2011-05-19 2016-03-08 Osram Opto Semiconductors Gmbh Optoelectronic device and method for producing optoelectronic devices

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