JP2006278701A5 - - Google Patents

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Publication number
JP2006278701A5
JP2006278701A5 JP2005095393A JP2005095393A JP2006278701A5 JP 2006278701 A5 JP2006278701 A5 JP 2006278701A5 JP 2005095393 A JP2005095393 A JP 2005095393A JP 2005095393 A JP2005095393 A JP 2005095393A JP 2006278701 A5 JP2006278701 A5 JP 2006278701A5
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JP
Japan
Prior art keywords
semiconductor
wafer according
semiconductor wafer
block
smoothed
Prior art date
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Pending
Application number
JP2005095393A
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Japanese (ja)
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JP2006278701A (en
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Publication date
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Priority to JP2005095393A priority Critical patent/JP2006278701A/en
Priority claimed from JP2005095393A external-priority patent/JP2006278701A/en
Publication of JP2006278701A publication Critical patent/JP2006278701A/en
Publication of JP2006278701A5 publication Critical patent/JP2006278701A5/ja
Pending legal-status Critical Current

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Claims (10)

半導体インゴットを準備する工程と、Preparing a semiconductor ingot; and
前記半導体インゴットを切断し半導体ブロックとする工程と、Cutting the semiconductor ingot into a semiconductor block;
前記半導体ブロックの切断面を化学エッチングにより平滑化する工程と、Smoothing the cut surface of the semiconductor block by chemical etching;
前記半導体ブロックの平滑化された前記切断面から、前記半導体ブロックのスライスを開始する工程と、を有することを特徴とする半導体ウェハの製造方法。And a step of starting slicing of the semiconductor block from the smoothed cut surface of the semiconductor block.
前記半導体ブロックの切断面を酸性の溶液に接触させ平滑化することを特徴とする請求項1に記載の半導体ウェハの製造方法。The method for producing a semiconductor wafer according to claim 1, wherein the cut surface of the semiconductor block is brought into contact with an acidic solution and smoothed. 前記半導体ブロックを酸性の溶液に浸し平滑化することを特徴とする請求項1に記載の半導体ウェハの製造方法。The method of manufacturing a semiconductor wafer according to claim 1, wherein the semiconductor block is dipped in an acidic solution and smoothed. 前記酸性の溶液は、30℃〜50℃の温度を有することを特徴とする請求項2または3に記載の半導体ウェハの製造方法。The method for producing a semiconductor wafer according to claim 2, wherein the acidic solution has a temperature of 30 ° C. to 50 ° C. 5. 前記半導体ブロックの切断面をアルカリ性の溶液に接触させ平滑化することを特徴とする請求項1に記載の半導体ウェハの製造方法。2. The method for producing a semiconductor wafer according to claim 1, wherein the cut surface of the semiconductor block is brought into contact with an alkaline solution and smoothed. 前記半導体ブロックをアルカリ性の溶液に浸し平滑化することを特徴とする請求項1に記載の半導体ウェハの製造方法。The method of manufacturing a semiconductor wafer according to claim 1, wherein the semiconductor block is dipped in an alkaline solution and smoothed. 前記アルカリ性の溶液は、40℃〜90℃の温度を有することを特徴とする請求項5または6に記載の半導体ウェハの製造方法。The method for producing a semiconductor wafer according to claim 5 or 6, wherein the alkaline solution has a temperature of 40 ° C to 90 ° C. 前記切断面が平滑化された前記半導体ブロックを水で洗浄することを特徴とする請求項1〜7のいずれかに記載の半導体ウェハの製造方法。The method of manufacturing a semiconductor wafer according to claim 1, wherein the semiconductor block with the cut surface smoothed is washed with water. 前記半導体ブロックをワイヤーソーにより切断することを特徴とする請求項1〜8のいずれかに記載の半導体ウェハの製造方法。The method of manufacturing a semiconductor wafer according to claim 1, wherein the semiconductor block is cut with a wire saw. 請求項1〜9のいずれかに記載の製造方法により製造され、平滑化された側面を有する半導体ウェハ。The semiconductor wafer which has the side surface manufactured by the manufacturing method in any one of Claims 1-9, and was smooth | blunted.
JP2005095393A 2005-03-29 2005-03-29 Manufacturing method for semiconductor wafer Pending JP2006278701A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005095393A JP2006278701A (en) 2005-03-29 2005-03-29 Manufacturing method for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005095393A JP2006278701A (en) 2005-03-29 2005-03-29 Manufacturing method for semiconductor wafer

Publications (2)

Publication Number Publication Date
JP2006278701A JP2006278701A (en) 2006-10-12
JP2006278701A5 true JP2006278701A5 (en) 2008-02-07

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ID=37213146

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JP2005095393A Pending JP2006278701A (en) 2005-03-29 2005-03-29 Manufacturing method for semiconductor wafer

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JP (1) JP2006278701A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010150080A (en) * 2008-12-25 2010-07-08 Disco Abrasive Syst Ltd Method for processing silicon block
JP5493887B2 (en) * 2010-01-12 2014-05-14 信越半導体株式会社 Single crystal block cleaning apparatus and cleaning method
JP5534933B2 (en) * 2010-05-17 2014-07-02 京セラ株式会社 Method for manufacturing solar cell element
TWI510682B (en) * 2011-01-28 2015-12-01 Sino American Silicon Prod Inc Modification process for nano-structuring ingot surface, wafer manufacturing method and wafer thereof
JP6045960B2 (en) * 2013-03-29 2016-12-14 株式会社ノリタケカンパニーリミテド Band saw

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3317839B2 (en) * 1996-02-16 2002-08-26 花王株式会社 Detergent composition and method for cleaning sliced wafer or plate
JPH10180747A (en) * 1996-12-24 1998-07-07 Tokyo Seimitsu Co Ltd Wafer manufacturing system
JP2000323736A (en) * 1999-05-10 2000-11-24 Mitsubishi Electric Corp Manufacture of silicon solar cell
JP2000323443A (en) * 1999-05-14 2000-11-24 Mitsubishi Materials Silicon Corp Manufacture of semiconductor wafer
JP2003224289A (en) * 2002-01-28 2003-08-08 Sharp Corp Solar cell, method for connecting solar cell, and solar cell module
JP2004106360A (en) * 2002-09-19 2004-04-08 Komatsu Electronic Metals Co Ltd Slit wafer supporting component and wafer cleaning apparatus
JP2005064256A (en) * 2003-08-12 2005-03-10 Shin Etsu Handotai Co Ltd Method of manufacturing epitaxial wafer
JP2005060168A (en) * 2003-08-12 2005-03-10 Shin Etsu Handotai Co Ltd Method for producing wafer
JP2006073768A (en) * 2004-09-02 2006-03-16 Katsuyo Tawara Processing method of silicon wafer

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