JP2006270017A5

JP2006270017A5 -

Info

Publication number: JP2006270017A5
Application number: JP2005181131A
Authority: JP
Filing date: 2005-06-21
Publication date: 2008-08-07
Anticipated expiration: 2025-06-21

Claims

A processing container in which a substrate to be processed is accommodated and evacuated;
A first electrode disposed opposite to the processing container and a second electrode for supporting the substrate to be processed;
A first high-frequency power application unit that applies a first high-frequency power having a relatively high frequency to the first electrode;
A second high-frequency power application unit that applies a second high-frequency power having a relatively low frequency to the second electrode;
A DC power supply for applying a DC voltage to the first electrode;
A processing gas supply unit that supplies a processing gas into the processing container, and a control device that controls any one of an applied voltage, an applied current, and an applied power from the DC power source to the first electrode. Plasma processing equipment.

The plasma processing apparatus according to claim 1, wherein a surface of the first electrode facing the second electrode is formed of a silicon-containing material.

2. A conductive member that is always grounded is provided in the processing vessel in order to release a current based on a DC voltage from the DC power source applied to the first electrode through plasma. Or the plasma processing apparatus of Claim 2 .

The plasma processing apparatus according to claim 3 , wherein the first electrode is an upper electrode, the second electrode is a lower electrode, and the conductive member is disposed around the second electrode. .

The plasma processing apparatus according to claim 3 , wherein the first electrode is an upper electrode, the second electrode is a lower electrode, and the conductive member is disposed in the vicinity of the first electrode. .

The plasma processing apparatus according to claim 5 , wherein the conductive member is arranged in a ring shape outside the first electrode.

The plasma processing apparatus according to claim 3 , wherein the conductive member has a recess for preventing adhesion of flying objects during the plasma processing.

In order to release the current based on the DC voltage from the DC power source applied to the first electrode through the plasma, a conductive member that is grounded based on a command from the overall control device is provided in the processing container. The plasma processing apparatus according to claim 1 , wherein:

The plasma processing apparatus according to claim 8 , wherein the conductive member is grounded during plasma etching.

A DC voltage or an AC voltage can be applied to the conductive member, and the surface is sputtered or etched by applying the DC voltage or the AC voltage based on a command from the overall control device. 10. The plasma processing apparatus according to claim 8 , wherein the plasma processing apparatus is characterized.

The plasma processing apparatus according to claim 10 , wherein a DC voltage or an AC voltage is applied to the conductive member during cleaning.

A switching mechanism for switching the connection of the conductive member between the DC power source side and the ground line is further provided, and when the conductive member is connected to the DC power source side by the switching mechanism, the conductive member is connected from the DC power source. The plasma processing apparatus according to claim 10 , wherein the surface is sputtered or etched by applying a DC voltage or an AC voltage to the conductive member.

The plasma processing apparatus according to claim 10 , wherein a negative DC voltage can be applied to the conductive member.

A grounded conductive auxiliary member is provided in the processing container to discharge a direct current electron current flowing into the processing container when a negative DC voltage is applied to the conductive member. The plasma processing apparatus according to claim 13 .

Based on a command from the overall control device, a first state in which a DC current from the DC power source supplied to the first electrode is grounded to escape via plasma is applied, and a DC voltage is applied from the DC power source. A conductive member that takes one of the second states in which the surface is sputtered or etched is provided in the processing vessel, the negative electrode of the DC power supply is connected to the first electrode, and the conductive member is Switchable between a first connection connected to a ground line and a second connection in which the positive electrode of the DC power supply is connected to the first electrode and the negative electrode of the DC power supply is connected to the conductive member , and the by the switching, the plasma treatment according to claim 1 or claim 2, further comprising a respective said first state and said second state capable of forming a connection switching mechanism Location.

The plasma processing apparatus according to claim 15 , wherein the first state is formed during plasma etching, and the second state is formed during cleaning of the conductive member.

A processing container in which a substrate to be processed is accommodated and evacuated;
A first electrode disposed opposite to the processing container and a second electrode for supporting the substrate to be processed;
A first high-frequency power application unit that applies a first high-frequency power having a relatively high frequency to the first electrode;
A second high-frequency power application unit that applies a second high-frequency power having a relatively low frequency to the second electrode;
A DC power supply for applying a DC voltage to the first electrode;
A processing gas supply unit for supplying a processing gas into the processing container; and a control device for controlling any one of an applied voltage, an applied current and an applied power from the DC power source to the first electrode,
The first electrode is divided into an inner electrode and an outer electrode, the first high-frequency power is distributed and applied to the inner electrode and the outer electrode, and the DC power source is at least one of them. A plasma processing apparatus which is connected.

The plasma processing apparatus according to claim 17 , wherein a surface of the first electrode facing the second electrode is formed of a silicon-containing material.

To release the current based on the DC voltage from the DC power applied to the first electrode through a plasma, according to claim 17, wherein providing the conductive member is grounded at all times into the processing chamber Or the plasma processing apparatus of Claim 18 .

The plasma processing apparatus according to claim 19 , wherein the first electrode is an upper electrode, the second electrode is a lower electrode, and the conductive member is disposed around the second electrode. .

The plasma processing apparatus according to claim 19 , wherein the first electrode is an upper electrode, the second electrode is a lower electrode, and the conductive member is disposed in the vicinity of the first electrode. .

The plasma processing apparatus according to claim 21 , wherein the conductive member is arranged in a ring shape outside the first electrode.

The plasma processing apparatus according to claim 19 , wherein the conductive member has a recess for preventing adhesion of flying objects during plasma processing.

In order to release the current based on the DC voltage from the DC power source applied to the first electrode through the plasma, a conductive member that is grounded based on a command from the overall control device is provided in the processing container. The plasma processing apparatus according to claim 17 or 18 , characterized by the above.

A first electrode and a second electrode that supports the substrate to be processed are disposed opposite to each other in the processing container, a first high-frequency power having a relatively high frequency is applied to the first electrode, and the second electrode is applied to the second electrode. While applying a second high-frequency power having a relatively low frequency, a processing gas is supplied into the processing container, plasma of the processing gas is generated, and plasma is applied to the substrate to be processed supported by the second electrode. A plasma processing method for performing processing,
A plasma processing method comprising: applying a DC voltage to the first electrode; and applying a plasma process to the substrate to be processed while applying a DC voltage to the first electrode.

26. The plasma processing method according to claim 25 , wherein the plasma processing on the substrate to be processed supported by the second electrode is etching of an insulating film provided on the substrate to be processed.

27. The plasma processing method according to claim 26 , wherein the insulating film is an organic insulating film.

28. The plasma processing method according to claim 27 , wherein the organic insulating film is a SiOC-based film.

29. The plasma processing method according to claim 28 , wherein the base film of the SiOC-based film is formed of silicon carbide (SiC).

When the insulating film is etched, the processing gas is a mixed gas of C ₄ F ₈ , N _2, and Ar, and a flow rate ratio thereof is C ₄ F ₈ / N ₂ / Ar = 4 to 20/100 to 500. The plasma processing method according to any one of claims 26 to 29 , wherein the plasma processing method is / 500 to 1500 mL / min.

The plasma processing method according to any one of claims 26 to 30 , wherein the plasma processing method is applied to an overetching step when the insulating film is etched.

A combination of C ₅ F ₈ , Ar, and N ₂ is used as the processing gas in order to increase a selection ratio of the insulating film to a base film when the insulating film is etched. The plasma processing method according to any one of claims 26 to 29 .

When etching the insulating film, in order to increase the selectivity with respect to the mask of the insulating film, CF ₄ or a combination of C ₄ F ₈ , CF ₄ , Ar, N ₂ , O ₂ is used as the processing gas. the plasma processing method according to the deviation of claims 29 claim 26, characterized in that use.

When etching the insulating film, in order to increase the etching rate of the insulating film, as the processing gas, C ₄ F ₆ , CF ₄ , Ar, O ₂ , C ₄ F ₆ , C ₃ F ₈ , Ar , _{O 2,} and _{_{_{_{C 4 F 6, CH 2 F}}}} 2, Ar, plasma processing method according to claim 26, wherein the use of any combination of _{O 2} in any one of claims 29 .

In the processing container, a first electrode and a second electrode that supports the substrate to be processed are arranged to face each other, and a first high frequency that is relatively high in frequency with respect to the first electrode divided into an inner electrode and an outer electrode. While applying power and applying a second high frequency power having a relatively low frequency to the second electrode, a processing gas is supplied into the processing container to generate plasma of the processing gas, and the second A plasma processing method for performing plasma processing on a substrate to be processed supported by an electrode,
Applying a DC voltage to at least one of the inner electrode and the outer electrode;
And a step of performing plasma processing on the substrate to be processed while applying a DC voltage to the first electrode.

When etching the insulating film of the substrate to be processed supported by the second electrode, in order to increase the selection ratio of the insulating film to the base film, as the processing gas, C ₅ F ₈ , Ar, N ₂ 36. The plasma processing method according to claim 35 , wherein a combination is used.

When the insulating film of the substrate to be processed supported by the second electrode is etched, CF ₄ , C ₄ F ₈ , CF _{4 is used} as the processing gas in order to increase the selection ratio with the mask of the insulating film. The plasma processing method according to claim 35 , wherein a combination of Ar, N ₂ , and O ₂ is used.

When etching the insulating film of the substrate to be processed supported by the second electrode, in order to increase the etching rate of the insulating film, C ₄ F ₆ , CF ₄ , Ar, O ₂ , and _{_{_{_{C 4 F 6, C 3 F}}}} 8, Ar, O 2, and _{_{_{_{C 4 F 6, CH 2 F}}}} 2, Ar, plasma according to claim 35, wherein the use of any combination of _{O 2} Processing method.

A computer storage medium storing a control program that runs on a computer,
35. A computer-readable storage medium, wherein the control program controls the plasma processing apparatus so that the plasma processing method according to any one of claims 25 to 34 is performed at the time of execution.

A computer storage medium storing a control program that runs on a computer,
A computer-readable storage medium, wherein the control program controls the plasma processing apparatus so that the plasma processing method according to any one of claims 35 to 38 is performed at the time of execution.