JP2006266896A - Manufacturing method of probe unit, and probe unit - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a probe unit having high bonding strength between a probe and a substrate, capable of forming highly accurately the probe bent three-dimensionally by plating. <P>SOLUTION: This manufacturing method of the probe unit is characterized by including a stage for forming a conductive sacrificial layer on the first surface of the substrate, a stage for forming a mask having a slit on the second surface which is the back surface of the first surface of the substrate, a stage for forming a penetrating groove reaching the sacrificial layer just under the slit by anisotropic etching of the substrate using the mask, and a stage for forming the probe by plating on the sacrificial layer in the penetrating groove. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a probe unit manufacturing method and a probe unit used for inspection of electronic devices such as LSIs and liquid crystal panels.

  Conventionally, an inspection of an electronic device such as an LSI or a liquid crystal panel is performed by bringing a probe into contact with an electrode of a specimen. With the narrowing of the arrangement interval of the electrodes, a technique for miniaturizing a probe by a thin film manufacturing process using lithography or the like has been developed. By embedding the probe in the substrate, the bonding surface between the probe and the substrate is increased, so that the probe is difficult to peel from the substrate.

  Patent Document 1 discloses a manufacturing method in which a probe is embedded in a resin substrate by pouring resin into gaps between a large number of probes and curing the resin. However, when the substrate is made of resin, there is a problem that it is difficult to increase the contact pressure between the probe and the electrode, and the amount of deformation of the substrate due to a change in temperature or humidity increases.

  Patent Document 2 discloses a manufacturing method in which a polyimide thin film as a mold having an opening is formed on the surface of a copper thin film, and a probe is formed by plating in the opening formed in the polyimide thin film. However, when a thin film to be used as a probe mold is formed on a conductive thin film and a mask for forming the mold is formed on the surface of the thin film, if the surface of the thin film to be used as a mold is not flat, fine openings in the mask It is difficult to control the shape of the part. Therefore, in this manufacturing method, it is difficult to form a fine probe bent three-dimensionally by plating.

JP 2001-133484 A JP 2003-57265 A

The present invention was created in view of the above problems, and provides a probe unit manufacturing method that can form a three-dimensionally bent probe with high accuracy by plating and has high bonding strength between the probe and the substrate. For the purpose.
Another object of the present invention is to provide a probe unit that has a high bonding strength between the probe and the substrate and can set a high contact pressure between the probe and the electrode of the specimen.

(1) A method for manufacturing a probe unit for achieving the above object includes a step of forming a conductive sacrificial layer on a first surface of a substrate, and a mask having a slit on the back surface of the first surface of the substrate. Forming on the corresponding second surface, forming a through groove reaching the sacrificial layer directly under the slit by anisotropic etching of the substrate using the mask, and in the through groove Forming a probe on the sacrificial layer by plating.
When a conductive sacrificial layer is formed on the first surface of the substrate and a mask is formed on the flat second surface of the substrate corresponding to the back surface of the first surface, regardless of the surface shape of the first surface of the substrate and the sacrificial layer, The mask can be patterned with high accuracy. The probe can be bonded to the side surface of the through groove by penetrating the substrate directly under the slit of the mask using anisotropic etching and forming the probe in the through groove formed in the substrate. Bonding strength with the substrate can be improved. In addition, by depositing the probe from the conductive sacrificial layer into the through groove, the generation of voids can be prevented, and the film thickness of the probe can be controlled by controlling the deposition time.

(2) The method for manufacturing the probe unit may further include a step of causing the probe to protrude from an edge of the substrate by partial etching of the substrate after the step of forming the probe.
By causing the probe to protrude from the edge of the substrate, a probe unit having a low contact pressure between the electrode to be inspected and the probe can be manufactured.

(3) The method for manufacturing the probe unit may further include a step of projecting the probe from the second surface of the substrate by etching the second surface of the substrate after the step of forming the probe.
By projecting the probe from the surface of the substrate, it is possible to manufacture a probe unit having a higher contact pressure between the electrode to be inspected and the probe than the probe unit in which the probe projects from the edge of the substrate.

(4) The substrate may be made of an inorganic material.
By manufacturing the substrate with an inorganic insulator, it is possible to manufacture a probe unit having a higher contact pressure between the electrode to be inspected and the probe than a probe unit in which the probe is supported on a substrate made of an organic material.

(5) The method for manufacturing the probe unit may further include a step of forming a curved surface on the first surface of the substrate before the step of forming the sacrificial layer. In the step of forming the sacrificial layer, a sacrificial layer may be formed on the curved surface. In the step of forming the through groove, the through groove reaching the curved surface may be formed.
A mask with high dimensional accuracy can be formed on the second surface of the flat substrate. By using the mask to form the probe on the curved surface of the sacrificial layer, the probe bent in the direction perpendicular to the substrate can be formed with high dimensional accuracy.

  (6) In the step of forming the curved surface, the convex curved surface may be formed on the first surface of the substrate.

(7) In the method of manufacturing the probe unit, before the step of forming the curved surface, an oxide film is formed on the first surface of the substrate, and an oxidation resistant mask is formed on the oxide film. A step of increasing the thickness of the oxide film from the lower center of the oxidation-resistant mask toward the outside by selective oxidation, and a step of removing the mask. In the step of forming the curved surface, a recess may be formed in the first surface of the substrate by removing the substrate and the oxide film by etching with a high selectivity of the substrate to the oxide film.
By selective oxidation, it is possible to form an oxide film whose film thickness increases from the center under the oxidation-resistant mask toward the outside. When etching having a high substrate selectivity with respect to the oxide film is performed on the oxide film, the substrate is removed deeply under the thin portion of the oxide film, and the substrate is removed shallowly under the thick portion of the oxide film. At this time, the deviation of the removal depth of the substrate is a value obtained by amplifying the deviation of the thickness of the oxide film. Therefore, the concave portion obtained by etching the substrate can be formed deeply. Further, since the film thickness distribution of the oxide film obtained as a result of the selective oxidation changes gradually, the surface of the recess obtained by etching the substrate also becomes a curved surface without a bent portion. When a probe is formed on a curved surface having no bent part and a large height difference, a probe that is greatly bent without a bent part can be formed.

(8) A probe unit for achieving the above object includes a substrate made of an insulator or a semiconductor inorganic material having a slit, and a plurality of probes deposited in the slit.
When the substrate is made of an inorganic material, the coefficient of thermal expansion is smaller than that of a resin material substrate, the dimensional change due to humidity is small, and the rigidity of the substrate can be improved. Can be set high. By depositing the probe in the slit of the substrate, the bonding height between the substrate and the probe can be improved. By bonding a probe to a substrate made of an insulator or a semiconductor, a plurality of probes insulated from each other can be bonded to the substrate.

  In the present specification, “... formed on” means “... formed directly on” and “... on the intermediate” unless there is a technical obstruction factor. It is meant to include both “formed through”. In addition, the order of each operation of the method described in the claims is not limited to the order of description unless there is a technical impediment, and may be executed in any order, and may be executed simultaneously. Also good.

Embodiments of the present invention will be described below based on a plurality of examples. In each of the embodiments, the component having the same reference sign corresponds to the component of the other embodiment having the reference sign.
(First Example)
1 to 3 are cross-sectional views showing a method of manufacturing a probe unit according to the first embodiment of the present invention.
In the manufacturing method of the present embodiment, first, as shown in FIGS. 1A1 and 1B1, a resist film 30 having a predetermined pattern is formed on the first surface 10a of the flat first substrate 10 by lithography. . Specifically, for example, a glass substrate having a thickness of 2 mm is used as the first substrate 10, and a positive resist is applied on the first surface of the glass substrate to a thickness of 60 μm and prebaked. Thereafter, the positive resist is exposed to light with an aligner or a stepper using a mask and then developed to pattern the positive resist into a predetermined pattern. The first substrate 10 may be made of an insulator such as quartz, SiNx, sialon, alumina, AlNx, sapphire, crystallized glass, or resin, a semiconductor such as Si, or a metal such as SUS or Al.

  Next, as shown in FIGS. 1A2 and 1B2, the resist film 30 is baked and reflowed to gradually decrease the thickness of the resist film 30 from the center toward the outside. Specifically, for example, the resist film 30 is baked at 130 ° C. for 30 minutes. In order to prevent the resist film 30 from being deteriorated in the subsequent etching process, the resist film 30 may be hard baked at 220 ° C. for 30 minutes, or Deep UV Cure may be performed. DeepUVCure is a curing method that irradiates ultraviolet light containing light having a short wavelength while heating the resist.

Next, as shown in FIGS. 1A3 and 1B3, the first surface 10a of the first substrate 10 is etched by reactive ion etching, whereby a convex curved surface is formed on the first surface 10a of the first substrate 10. 11 is formed. Specifically, for example, reactive ion etching using CF ₄ and O ₂ is performed. In this case, when the first substrate 10 is etched at a selection ratio of about 1 with respect to the resist film 30 by controlling the O ₂ flow rate, a curved surface 11 substantially the same as the surface shape of the resist film 30 can be obtained. In addition, instead of the steps shown in FIGS. 1A1 and 1B1 to FIGS. 1A3 and 1B3, the first surface 10a of the first substrate 10 has a convex shape by machining such as cutting and sandblasting. The curved surface 11 may be formed. When a glass substrate having a thickness of 2 mm is used as the first substrate 10, a convex curved surface having a height of about 50 μm to 100 μm can be formed by machining on the first surface of the glass substrate.

  Next, as shown in FIGS. 1A4 and 1B4, a sacrificial film base layer 32 is formed on the first surface 10a of the first substrate 10 by sputtering, vapor deposition, CVD, or the like. The sacrificial film base layer 32 is a multilayer. For example, a 0.02 μm-thick Cr layer for adhering the first substrate 10 and a base film of a sacrificial film formed thereon, and a 0.1 μm-thick Cu layer as a base film of the sacrificial film; It can be made into a multilayer. Thereby, the base film necessary for forming the sacrificial film can be reliably adhered to the first substrate 10. Depending on the material of the first substrate 10, the layer for adhering the first substrate 10 and the base film may be omitted.

  Next, as shown in FIGS. 1A5 and 1B5, a sacrificial film 34 is formed on the sacrificial film base layer 32 by plating. For the sacrificial film 34, for example, a low melting point metal such as Cu, Sn, or solder, or a conductive resin is used. Further, the sacrificial film 34 is formed by electrolytic plating, electroless plating, sputtering, or the like. In this embodiment, the sacrificial film base layer 32 and the sacrificial film 34 correspond to the sacrificial layers recited in the claims.

Next, as shown in FIGS. 2A1 and 2B1, the surface of the sacrificial film 34 is planarized by polishing and grinding.
Next, as shown in FIGS. 2A2 and 2B2, a resist 35 is applied on the second surface 10 b corresponding to the back surface of the first surface 10 a of the first substrate 10, and baked. Evaporate the solvent. The resist 35 is applied with a film thickness of 100 μm, for example.

  Next, as shown in FIGS. 2A3 and 2B3, the resist 35 is exposed and developed and patterned to form a slit 38 that is at least partially positioned directly above the curved surface 11 of the first substrate 10. A resist film 36 is formed. Specifically, the resist 35 is exposed by a stepper or aligner using a mask having a predetermined pattern, and then patterned by developing and rinsing. For example, a resist film 36 having a pattern in which a plurality of linear resists having a width of 25 μm are arranged with a slit 38 having a width of 25 μm interposed therebetween is formed. An organic antireflection film or an inorganic antireflection film such as SiN, SiON, TiN, TiON, or amorphous Si may be formed between the resist 35 and the first substrate 10. In that case, the antireflection film is removed by reactive ion etching after the development of the resist 35. The resist 35 may be exposed by an electron beam exposure apparatus or a laser direct drawing apparatus without using a mask. Since the exposure method using an electron beam exposure apparatus or a laser direct drawing apparatus does not use an expensive mask, the manufacturing cost can be reduced.

  Next, as shown in FIGS. 2A4 and 2B4, the first substrate 10 is anisotropically etched by deep RIE or the like using the resist film 36 as a mask, thereby sacrificing directly below the slit 38 of the first substrate 10. The through groove 12 exposing the film base layer 32 is formed. Since at least a part of the slit 38 is located immediately above the curved surface 11 of the first substrate 10, the through groove 12 formed immediately below the slit 38 reaches the curved surface 11, and the curved surface 11 of the sacrificial film base layer 32. The concave curved surface 33 just below is exposed.

Next, as shown in FIGS. 2A5 and 2B5, the resist film 36 is removed, and the probe 20 is formed on the sacrificial film base layer 32 in the through groove 12 by electrolytic plating. Since the probe 20 is deposited from the sacrificial film base layer 32, the film thickness of the probe 20 can be controlled by the deposition time. Therefore, the process which adjusts the film thickness of the probe 20 by the grinding process after a plating process is unnecessary. Further, when depositing from the side surface of the through groove 12, a void is likely to be generated in the probe 20, but no void is generated in the probe 20 deposited from the sacrificial film base layer 32. For removal of the resist film 36, NMP (N-methyl-2-pyrrolidone), acetone, or the like may be used, or O ₂ plasma or an amine organic stripping solution may be used. For example, Ni is used for the probe 20, and Ni is plated with a film thickness of 20 μm.

Next, as shown in FIGS. 3A1 and 3B1, the first substrate 10 is removed. For example, DeepRIE can be used. Alternatively, selective etching may be performed using wet etching or isotropic plasma etching.
Next, as shown in FIGS. 3A2 and 3B2, the surface of one end of the probe 20 formed on the flat surface of the sacrificial film base layer 32 is bonded to the electrode 16 penetrating the second substrate 14. Specifically, the bonding material 19 is used for bonding by heating and pressing. A lead wiring 18 connected to the electrode 16 is formed in advance on the surface of the second substrate 14 opposite to the probe 20. The electrode 16 and the lead wiring 18 may be integrally formed.
Next, as shown in FIGS. 3A3 and 3B3, the probe 20 is peeled from the sacrificial film base layer 32. FIG. When the adhesion layer of the sacrificial film base layer 32 is Cr, the probe 20 can be easily peeled from the sacrificial film base layer 32 because of poor adhesion to the probe 20 made of Ni plating.
The above is the manufacturing method of the probe unit.

Next, the probe unit manufactured by the above manufacturing method will be described.
As shown in FIGS. 3A3 and 3B3, in the probe unit 1 according to this embodiment, the probe 20 having the curved portion 22 is bonded to the electrode 16 of the second substrate 14. The sacrificial film base layer 32 is formed on the convex curved surface 11 of the first substrate 10, and the probe 20 is formed on the concave curved surface 33 corresponding to the curved surface 11 of the sacrificial film base layer 32. The curved portion 22 is curved corresponding to the concave shape of the curved surface 33. Further, in order to join the second substrate 14 to the surface of one end of the probe 20 formed outside the curved surface 33 of the sacrificial film base layer 32, the curved portion 22 formed on the curved surface 33 of the probe 20 is a second substrate. 14 and can contact the electrode of the electronic device to be inspected. Further, the probe 20 is connected to the lead wiring 18 formed on the surface of the second substrate 14 opposite to the probe 20 via the electrode 16 penetrating the second substrate 14. The lead wiring 18 is connected to an external electrode (not shown) for inputting / outputting a signal for inspecting the electronic device.

  According to the present embodiment, by forming the resist film 36 on the flat second surface corresponding to the back surface of the first surface of the first substrate on which the curved surface for forming the curved portion 22 of the probe 20 is formed, A resist film 36 with high positional accuracy and dimensional accuracy for forming a mold (through groove) for the curved portion 22 can be formed. Since the through groove 12 reaching the curved surface of the first substrate can be formed using the resist film 36 as a mask and the probe can be formed on the curved surface of the sacrificial film underlayer, the probe having the curved portion can be positioned at a high position. It can be formed with accuracy and dimensional accuracy.

  Furthermore, by using DeepRIE having excellent anisotropy and selectivity for forming the through groove 12, the through groove 12 can be accurately formed immediately below the slit of the resist film 36 formed with high dimensional accuracy. When a probe is formed in the through groove, the probe can be formed with higher dimensional accuracy. Moreover, the bonding strength between the probe 20 and the first substrate 10 can be increased by depositing the probe in the through groove.

  Further, according to the present embodiment, a probe unit in which the curved portion of the probe is separated from the second substrate is manufactured by joining one end of the probe formed outside the curved surface of the sacrificial film base layer to the second substrate. be able to. Further, by increasing the height difference of the curved surface 11 of the first substrate 32, the displacement amount (overdrive amount) of the probe unit from when the curved portion of the probe is brought into contact with the electrode of the electronic device until the probe and the electrode are brought into conduction. ) Can be increased.

  Further, according to this embodiment, one end of the probe is joined to an electrode penetrating the second substrate, and the electrode is connected to a lead wiring formed on the surface of the second substrate opposite to the probe. Therefore, it is possible to manufacture a probe unit in which the probe and the external electrode can be easily connected through the lead wiring and the electrode penetrating the second substrate.

(Second embodiment)
FIG. 4 is a cross-sectional view illustrating a method of manufacturing a probe unit according to the second embodiment of the present invention.
In the manufacturing method of this embodiment, first, the steps shown in FIGS. 1A1 and 1B1 to 1A3 and B3 are performed. Specifically, for example, a glass substrate having a thickness of 2 mm is used as the first substrate 10, and a convex curved surface having a height of 100 μm is formed on the first surface of the glass substrate by cutting, sandblasting, etching with hydrofluoric acid, or the like.

  Next, as shown in FIGS. 4A1 and 4B1, after the probe base layer 40 is formed on the first surface 10a of the first substrate 10, FIGS. 1A5, B5, and 2A1 are formed. ), A sacrificial film 34 having a planarized surface is formed on the probe base layer 40 in accordance with the process shown in (B1). The probe underlayer 40 is a multilayer formed by sputtering. For example, a multilayer of a 0.02 μm-thick Ti layer for adhering the first substrate 10 and the base film of the sacrificial film 34 and a 0.1 μm-thick Ni layer as the base film of the sacrificial film is used. be able to. Thereby, the base film necessary for forming the sacrificial film can be reliably adhered to the first substrate 10. Depending on the material of the first substrate 10, the layer for adhering the first substrate 10 and the base film may be omitted. The probe underlayer 40 may be made of a metal such as Ni, Ni alloy, or Cr.

Next, as shown in FIGS. 4A2 and 4B2, through-grooves 12 are formed in the first substrate 10 according to the steps shown in FIGS. 2A2 and 2B2 to FIGS. 2A5 and 2B5. After forming the probe body 20, the probe body 20 is formed on the probe base layer 40 in the through groove 12. Ni, Ni alloy or the like is used for the probe body 20.
Next, as shown in FIGS. 4A3 and 4B3, the first substrate 10 is removed by anisotropic etching or the like according to the steps shown in FIGS. 3A1 and 3B1. For example, DeepRIE can be used. Alternatively, selective etching may be performed using wet etching or isotropic plasma etching.

Next, as shown in FIGS. 4A4 and 4B4, the exposed portion of the probe base layer 40 is removed. Specifically, for example, it is removed by ion milling using Ar ions, wet etching, or the like.
Next, as shown in FIGS. 4A5 and 4B5, the probe body 20 is bonded to the electrode 16 of the second substrate 14 in accordance with the steps shown in FIGS. 3A2 and 3B2.
Next, as shown in FIGS. 4A6 and 4B6, when the sacrificial film 34 is selectively removed, the probe unit 2 is completed. The probe 24 of the probe unit 2 includes a probe main body 20 and a probe base layer 40.

(Third embodiment)
5 to 7 are views showing a method of manufacturing a probe unit according to the third embodiment of the present invention.
In the manufacturing method of the present embodiment, first, as shown in FIGS. 5A1 and 5B1, a sacrificial film base layer 54 is formed on the first surface 50a of the flat substrate 50. A thick substrate made of an inorganic material such as glass or ceramics is used for the substrate 50. A plurality of layers may be used for the sacrificial film underlayer 54. For example, a sacrificial film composed of a multilayer composed of a Cr layer having a thickness of 0.02 μm for adhering the substrate 50 and a sacrificial film formed thereon and a Cu layer having a thickness of 0.1 μm as a base of the sacrificial film. An underlayer 54 is formed. A sacrificial film underlayer 54 is formed by sputtering, vapor deposition, CVD, or the like.

  Next, as shown in FIGS. 5A2 and 5B2, a sacrificial film 56 is formed on the sacrificial film base layer 54 by plating. For the sacrificial film 56, for example, a low melting point metal such as Cu, Sn, or solder, or a conductive resin is used. Further, the sacrificial film 56 is formed by electrolytic plating, electroless plating, sputtering, or the like. In this embodiment, the sacrificial film underlayer 54 and the sacrificial film 56 correspond to the sacrificial layers recited in the claims.

  Next, as shown in FIGS. 5A3 and 5B3, a resist film 58 having a slit 60 at a predetermined position is formed on the second surface 50b corresponding to the back surface of the first surface 50a of the substrate 50 by lithography. . Specifically, first, a resist is applied on the second surface 50b of the substrate 50, and the solvent in the resist is evaporated by baking. The resist is applied with a film thickness of 100 μm, for example. Next, after exposing the resist with a stepper or aligner using a mask having a predetermined pattern, the resist is patterned by developing and rinsing. For example, a resist film 58 in which a plurality of linear resists having a width of 25 μm are arranged with a slit 60 having a width of 25 μm interposed therebetween is formed. The resist exposure may be performed by an electron beam exposure apparatus or a laser direct drawing apparatus without using a mask.

Next, as shown in FIGS. 5A4 and 5B4, the substrate 50 is anisotropically etched using the resist film 58 as a mask, thereby forming a through groove 52 that exposes the sacrificial film base layer 54 in the substrate 50. To do. Thereafter, the resist film 58 is removed. For removal of the resist film 58, NMP (N-methyl-2-pyrrolidone), acetone, or the like may be used, or O ₂ plasma or an amine organic stripping solution may be used.

Next, as shown in FIGS. 5A5 and 5B5, a probe 62 is formed on the sacrificial film base layer 54 in the through groove 52 by electrolytic plating. For example, Ni is used for the probe 62 and plated with a film thickness of 20 μm.
Next, as shown in FIGS. 6A1 to 6C1, a resist film 64 is formed by lithography to cover one side of the probe 62 and the substrate 50 around it. Specifically, for example, a resist is applied on the substrate 50 with a film thickness of 50 μm or more and 200 μm or less, then exposed to a stepper or an aligner using a mask, and developed and rinsed to pattern the resist.

Next, as shown in FIGS. 6A2 to 6C2, the substrate 50 is anisotropically etched using the resist film 64 as a mask to form a completed substrate 51, and the resist film 64 of the probe 62 is used. An uncovered portion is projected from the edge 53 of the finished form 51 of the substrate.
Next, as shown in FIG. 7, the resist film 64, the sacrificial film underlayer 54, and the sacrificial film 56 are selectively removed by etching.
The above is the manufacturing method of the probe unit.

Next, the probe unit manufactured by the above manufacturing method will be described.
As shown in FIG. 7, in the probe unit 3 according to the present embodiment, the plurality of probes 62 are fitted into the plurality of slits 52 a of the comb-like substrate 51 on a one-to-one basis. The slit 52a corresponds to a part of the through groove 52 formed in the substrate 50 (see FIGS. 5A4 and 5B4). Since the slit 52 a penetrates the substrate 51, the probes 62 fitted in the slit 52 a are exposed on both surfaces of the substrate 51. In addition, after forming the sacrificial film base layer 54 on the first surface 50a of the substrate 50, the probe 62 is formed on the sacrificial film base layer 54 in the through groove 52 of the substrate 50 (see FIG. 5). 62 is in close contact with the inner wall of the slit 52a. Further, in order to obtain a completed substrate 51 by etching the substrate 50 using a resist film 64 covering one side of the probe 62 and the substrate 50 around the probe 62 (see FIGS. 6A2 to 6C2), One side of the probe 62 is fitted into the slit 52 a, and the other side protrudes from the edge 53 of the substrate (completed form) 51.

According to this embodiment, since the probe can be brought into close contact with the inner wall of the slit of the substrate, it is possible to make the probe difficult to peel off from the substrate. Moreover, the probe can be protected by the substrate by forming the probe in the slit of the substrate. Therefore, the durability of the probe unit can be improved.
Further, according to the present embodiment, since the probes are exposed on both surfaces of the substrate, it is possible to manufacture a probe unit that can easily align the electrodes of the electronic device to be inspected with the probes and connect the probes to the external electrodes. it can.

In addition, according to this embodiment, the probe is protruded from the edge of the substrate, thereby producing a probe unit having a lower contact pressure between the electrode of the electronic device and the probe than the probe unit in which the probe does not protrude from the edge of the substrate. can do.
Further, according to this embodiment, since a thick substrate made of an inorganic material such as glass or ceramics can be used, the coefficient of thermal expansion is smaller than that of a probe unit having a substrate made of an organic material, and the dimensional change due to humidity is small. Moreover, a highly rigid probe unit can be manufactured. According to this probe unit, the electrode of the electronic device and the probe can be accurately brought into contact with each other with a high contact pressure.

(Fourth embodiment)
FIG. 8 is a diagram showing a method for manufacturing a probe unit according to the fourth embodiment of the present invention.
In the manufacturing method of this example, first, the steps shown in FIGS. 5A1 and 5B1 to FIGS. 5A4 and 5B4 are performed.
Next, as shown in FIGS. 8A1 and 8B1, a probe 66 is formed on the sacrificial film base layer 54 in the through groove 52 of the substrate 50 by electrolytic plating. For example, a Ni—Fe alloy is used for the probe 66, and the Ni—Fe alloy is plated with a film thickness of 80 μm.

Next, as shown in FIGS. 8A2 and 8B2, the substrate 50 is thinned by anisotropically etching the second surface 50b of the substrate 50, and the probe 66 protrudes from the second surface 50b of the substrate 50. Let
Next, as shown in FIGS. 8A3 to 8C3, the sacrificial film base layer 54 and the sacrificial film 56 are selectively removed by etching.
The above is the manufacturing method of the probe unit.

Next, the probe unit manufactured by the above manufacturing method will be described.
As shown in FIGS. 8A3 to 8C3, in the probe unit 4 according to this embodiment, the probe 66 is fitted in the slit 52 of the substrate 50 so as to protrude from the second surface 50b of the substrate 50. In this embodiment, the slit 52 corresponds to a through groove of the substrate 50. After the probe 66 is formed on the sacrificial film base layer 54 in the through groove 52, the second surface 50b of the substrate 50 is etched (FIG. 8 (A1), (B1), (A2), (B2) The probe 66 can be protruded from the second surface 50b of the substrate 50.

  According to this embodiment, the contact pressure between the electrode of the electronic device to be inspected and the probe is higher than that of the probe unit in which the probe protrudes from the edge of the substrate by protruding the probe from the second surface of the substrate. A probe unit can be manufactured.

(Fifth embodiment)
9 to 13 are views showing a method of manufacturing a probe unit according to the fifth embodiment of the present invention.
In the manufacturing method of this embodiment, first, the steps shown in FIGS. 1A1 and 1B2 to 2A5 and 2B5 are performed.
Next, as shown in FIGS. 9A1 to 9C1, a resist film 42 is formed by lithography to cover a portion of the substrate 10 and the probe 20 that is located immediately above the curved surface 33 of the sacrificial film base layer 32. Specifically, for example, a resist is applied on the substrate 10 with a film thickness of 50 μm or more and 200 μm or less, then exposed to a stepper or an aligner using a mask, and developed and rinsed to pattern the resist.

  Next, as shown in FIGS. 9A2 to 9C2, the electrode 26 is formed on the probe 20 inside the opening 44 formed by the inner wall of the through groove 12 of the substrate 10 and the side wall of the resist film 42. To do. For example, Ni is used for the electrode 26, and Ni is plated to a thickness of about 100 μm by electrolytic plating. The electrode 26 may be plated until it overflows from the opening 44, or the electrode 26 may be plated so as to partially fill the opening 44.

Next, as shown in FIGS. 10A1 to 10C1, the surface of the workpiece is flattened by polishing and grinding from the second surface 10 b side of the substrate 10.
Next, as shown in FIGS. 10A2 and 10B2, the resist film 42 is removed. The resist film 42 may be removed with NMP, acetone, or the like, or may be removed with O ₂ plasma or an amine organic stripping solution.

  Next, as shown in FIGS. 11A1 to 11C1, a resist film 46 covering the outer edge of the substrate 10 and a part of the electrode 26 is formed on the second surface 10b of the substrate 10 by lithography. Specifically, for example, after applying a resist on the substrate 10, the resist is patterned by exposing with a stepper or aligner using a mask, developing, and rinsing.

Next, as shown in FIGS. 11A2 to 11C2, the substrate 10 is anisotropically etched using the resist film 46 as a mask to form the inner peripheral edge 13 of the substrate, and the curved portion 22 side of the probe 20 is formed. And a part of the electrode 26 are projected from the inner peripheral edge 13 of the substrate.
Next, as shown in FIGS. 12A1 to 12C1, the resist film 46 is removed. The resist film 46 may be removed with NMP, acetone, or the like, or may be removed with O ₂ plasma or an amine organic stripping solution.

Next, as shown in FIGS. 12A2 to 12C2, the substrate 10, the sacrificial film base layer 32, and the sacrificial film 34 are cut to remove unnecessary outer edges of the substrate 10. A finished shape 15 of the shaped substrate is formed. Specifically, for example, cutting is performed using a dicer, laser, router, or the like. The completed substrate 15 may be formed by removing unnecessary outer edge portions of the substrate 10 by lithography and etching.
Next, as shown in FIG. 13, the sacrificial film base layer 32 and the sacrificial film 34 are selectively removed by etching.
The above is the manufacturing method of the probe unit.

Next, the probe unit manufactured by the above manufacturing method will be described.
As shown in FIG. 13, in the probe unit 5 according to the present embodiment, a plurality of slits 12a are formed on the inner peripheral edge of the ring-shaped substrate 15, and one end of the probe 20 and the electrode 26 are fitted into the slit 12a. The other end of 20 protrudes inward from the inner peripheral edge 13 of the substrate. The slit 12a corresponds to a part of the through groove 12 formed in the substrate 10 (see FIGS. 2A4 and 2B4). In the above-described manufacturing method, the sacrificial film base layer 32 is formed on the convex curved surface 11 of the first surface 10 a of the substrate 10, and then the probe 20 is formed on the concave curved surface 33 of the sacrificial film base layer 32. (See FIGS. 1 (A4) and (B4) to FIGS. 2 (A5) and (B5)). Therefore, the curved portion 22 formed on the curved surface 33 of the probe 20 is separated from the substrate (completed form) 15. Further, in the manufacturing method described above, the electrode 26 reaching the second surface 10b of the substrate 10 is formed on one end of the probe 20 opposite to the curved portion 22, and then the inner peripheral edge 13 of the substrate is crossed across the electrode 26. (See FIGS. 9 to 11). Therefore, a slit 12a filled with the probe 20 and the electrode 26 is formed in the substrate 15, and the curved portion 22 side of the probe 20 protrudes inward from the inner peripheral edge 13 of the substrate.

  In the above-described manufacturing method, the probe pattern is changed by changing the mask pattern used in each of the steps shown in FIGS. 2A3 and 2B3 and the steps shown in FIGS. 9A1 to 9C1. The electrode pattern may be changed. For example, as shown in FIG. 14, the lengths of the probes 20 may be changed every other, and the electrodes 26 may be arranged in a staggered manner so as not to be parallel to the arrangement direction of the probes 20. After the probe 20 and the electrode 26 are formed, the substrate 15 is formed in accordance with the steps shown in FIGS. 12A2 to 12C2 and FIG. As shown in FIG. 15, the probe unit 5a in which the electrodes 26 are arranged in a staggered manner is completed.

According to this embodiment, since the slit filled with the probe and the electrode can be formed in the substrate, the probe and the electrode can be integrally adhered to the entire inner wall of the slit. Therefore, the probe can be made more difficult to peel off, and the durability of the probe unit can be further improved.
In addition, according to the present embodiment, since the electrode exposed on the second surface of the substrate is formed directly on the probe, a probe unit in which the probe and the external electrode can be easily connected via the electrode can be manufactured.

(Sixth embodiment)
16 to 20 are views showing a method of manufacturing a probe unit according to the sixth embodiment of the present invention.
In the manufacturing method of this embodiment, first, as shown in FIGS. 16A1 and 16B1, an oxide film 72 is grown on the first surface 70a of the substrate 70, and an oxidation-resistant mask 80 is grown on the oxide film 72. Let Specifically, for example, a Si substrate having a thickness of 0.625 mm is used as the substrate 70, and an SiO _x film as an oxide film 72 is grown on the Si substrate by 300 ° C. by thermal oxidation. Further, an SiN _x film is grown as an oxidation resistant mask 80 on the SiO _x film by 1400 cm by low pressure CVD.

  Next, as shown in FIGS. 16A2 and 16B2, a resist film 82 having a predetermined pattern is formed on the oxidation resistant mask 80 by applying a resist on the oxidation resistant mask 80 and performing exposure and development. Form. Specifically, for example, a positive resist is applied on the oxidation-resistant mask 80 and prebaked, and then the positive resist is exposed with a stepper, aligner, etc. using the mask, and then developed.

Next, as shown in FIGS. 16A3 and 16B3, after the oxidation resistant mask 80 is etched using the resist film 82 as a mask, the resist film 82 is removed by ashing using oxygen plasma or a resist stripping solution. When the oxidation resistant mask 80 is made of a SiN _x film, reactive ion etching using, for example, CHF ₃ gas, CO ₂ gas, and Ar gas is performed.

Next, as shown in FIGS. 16A4 and 16B4, by selectively oxidizing the substrate 70 on which the oxidation resistant mask 80 is formed, the oxide film 72 is directed outward from the center of the lower portion of the oxidation resistant mask 80. The film thickness is gradually increased. When the substrate 70 is a Si substrate, a LOCOS (LOCal Oxidation of Silicon) process is used. That is, the oxidation resistant mask 80 is used as a mask to selectively oxidize the Si substrate by wet oxidation to about 1 μm. The humidification oxidation is performed by supplying 0.02 m ³ / min of H ₂ gas and 0.02 m ³ / min of O ₂ gas in a vertical diffusion furnace having an in-furnace temperature of 850 ° C.

Next, as shown in FIGS. 16A5 and 16B5, the oxidation resistant mask 80 is removed. When the oxidation resistant mask 80 is a SiN _x film, the SiN _x film is etched with phosphoric acid at 150 ° C., for example.
Next, as shown in FIGS. 16A6 and 16B6, the surface of the oxide film 72 is thinly removed to such an extent that the thinnest portion of the oxide film 72 is completely removed. When the oxide film 72 is an SiO _x film, the SiO _x film is isotropically etched by about 500 mm with buffered hydrofluoric acid, for example. This step may be omitted.

  Next, as shown in FIGS. 16A7 and 16B7, by using the oxide film 72 as a mask, the substrate 70 is etched by anisotropic etching having a high selectivity with respect to the oxide film 72, whereby the first surface of the substrate 70 is obtained. A recess 74 composed of a part of 70a and the etched surface of the oxide film 72 is formed.

  In this step, since the substrate 70 on which the oxide film 72 having an uneven film thickness is formed is etched, the substrate 70 is etched deeply under the thin portion of the oxide film 72 and under the thick portion of the oxide film 72. Etched shallowly. At this time, since the selection ratio of the substrate 70 to the oxide film 72 is high, the deviation of the etching amount of the substrate 70 becomes a value obtained by amplifying the deviation of the film thickness of the oxide film 72, and the concave portion 74 having a large height difference may be formed. it can. Further, since the film thickness distribution of the oxide film 72 gradually changes due to selective oxidation, the etching amount distribution of the substrate 70 also becomes gentle, and the surface 32 of the recess 74 becomes a gently curved surface without a bent portion. The curved surface 76 of the concave portion 74 may have a wavefront shape having a concave surface on the bottom side of the concave portion 74 and a convex surface on the edge side of the concave portion 74 as illustrated, or may have another shape.

Next, as shown in FIGS. 17A1 and 17B1, a sacrificial film base layer 84 is grown on the recess 74 and on the oxide film 72 outside the recess 74. For example, Ni is used for the sacrificial film base layer 84, and Ni is grown to a thickness of 0.1 μm by sputtering, vapor deposition, CVD, or the like.
Next, as shown in FIGS. 17A2 and 17B2, after a sacrificial film 86 is formed on the sacrificial film base layer 84 by electrolytic plating or the like, the surface of the sacrificial film 86 is planarized by polishing and grinding. . For example, Cu is used for the sacrificial film 86.

  Next, as shown in FIGS. 17A3 and 17B3, on the second surface 70b corresponding to the back surface of the first surface 70a of the substrate 70, a slit 90 at least a part of which is located directly above the recess 74 is formed. A resist film 88 is formed by lithography. Specifically, first, a resist is applied onto the second surface 70b of the substrate 70, and then exposed to light with a stepper or aligner using a mask having a predetermined pattern, followed by development and rinsing, thereby patterning the resist. The resist is applied with a film thickness of 100 μm, for example. Further, for example, a resist film 80 having a pattern in which a plurality of linear resists having a width of 25 μm are arranged with a slit 90 having a width of 25 μm interposed therebetween is formed. The resist exposure may be performed by an electron beam exposure apparatus or a laser direct drawing apparatus without using a mask.

  Next, as shown in FIGS. 17A4 and 17B4, the substrate 70 and the oxide film 72 are anisotropically etched using the resist film 88 as a mask, so that the substrate 70 and the oxide film 72 are directly under the slit 90. Then, a through groove 78 exposing the sacrificial film base layer 84 is formed. Since at least a part of the slit 90 is located immediately above the recess 74, the through groove 78 formed immediately below the slit 90 reaches the curved surface 76 of the recess 74, and the curved surface 76 of the sacrificial film base layer 84. A convex curved surface 85 just below is exposed.

  Next, as shown in FIGS. 17A5 and 17B5, a probe 92 is formed on the sacrificial film foundation layer 84 in the through groove 78 by electrolytic plating. For example, Ni is used for the probe 92 and is plated with a film thickness of 20 μm. In addition to Ni, Ni alloys such as Ni—Co, Ni—Mn, Ni—Fe, and Ni—W may be used.

  Next, as shown in FIGS. 18A1 and 18B1, a resist film 94 that forms an opening 96 together with the resist film 88 is formed immediately above the top of the curved surface 85 of the sacrificial film base layer 84. Specifically, the resist is patterned on the substrate 70 by applying a resist to a film thickness of about 100 μm or more and about 200 μm or less, then exposing with a stepper or aligner using a mask, developing and rinsing.

  Next, as shown in FIGS. 18A2 and 18B2, a protrusion 93 is formed by electrolytic plating on the probe 92 in the opening 96 formed by the resist films 88 and 94. At this time, the plating thickness is adjusted so that the surface of the protruding portion 93 is higher than the second surface 70 b of the substrate 70. For example, Ni is used for the projecting portion 93, and Ni is plated to a thickness of about 50 μm to about 100 μm. In addition to Ni, Ni alloys such as Ni—Co, Ni—Mn, Ni—Fe, and Ni—W may be used.

Next, as shown in FIGS. 18A3 and 18B3, the resist films 88 and 94 are removed. For removing the resist films 88 and 94, NMP (N-methyl-2-pyrrolidone), acetone, or the like may be used, or O ₂ plasma or an amine organic stripping solution may be used.
Next, as shown in FIGS. 19A1 to 19C1, a resist film 98 that covers the outer edge portion of the substrate 70 and one end of the probe 92 opposite to the protruding portion 93 is formed by lithography. Specifically, after applying a resist on the substrate 98, the resist is patterned by exposing with a stepper or aligner using a mask, developing and rinsing.

Next, as shown in FIGS. 19A2 to 19C2, the substrate 70 is anisotropically etched using the resist film 98 as a mask to form a completed substrate 71, and the resist film 98 of the probe 92 is formed. An uncovered portion is projected from the inner peripheral edge 73 of the completed shape of the substrate. The completed substrate 71 includes a substrate 70 and an oxide film 72.
Next, as shown in FIG. 20, after removing the resist film 98, the sacrificial film base layer 84 and the sacrificial film 86 are selectively removed by etching.
The above is the manufacturing method of the probe unit.

Next, the probe unit manufactured by the above manufacturing method will be described.
As shown in FIG. 20, in the probe unit 6 according to the present embodiment, one end of the probe 92 is fitted into a slit 78 a formed in the inner peripheral edge of the completed board 71, and from the inner peripheral edge 73 of the completed board. A probe 92 projects inward, and a projecting portion 93 is formed at the tip of the probe 92 projecting. Further, a sacrificial film base layer 84 is formed on the curved surface 76 in which the concave surface and the convex surface of the concave portion 74 are continuously formed, and the probe is formed on the curved surface 85 corresponding to the irregularities of the curved surface 76 of the sacrificial film base layer 84. In order to form 92 (see FIG. 17), the probe 92 is curved into a gentle wave shape without a bent portion. Further, since the curved surface 85 of the sacrificial film base layer 84 is convex (see FIG. 17), the probe 92 is curved from the first surface 70a side of the substrate 70 toward the second surface 70b side. The protruding portion 93 is formed on the second surface 70 b side of the substrate 70 at one end of the probe 92 protruding from the inner peripheral edge 73 of the completed substrate, and protrudes from the second surface 70 b of the substrate 70.

  As shown in FIG. 21, the probe unit 6 is connected to a printed wiring board 7 for inputting / outputting an inspection signal of the electronic device 9 via an interposer 8. One end of the probe 92 opposite to the protruding portion 93 is connected to the electrode 100 of the interposer 8. Further, the electrode 100 of the interposer 8 is connected to the back surface opposite to the surface on which the protruding portion 93 of the probe 92 is formed.

  When conducting a continuity test of the electronic device 9, the probe unit 6 is first brought into contact with the protruding portion 93 and the electrode 102 of the electronic device 9 so as to correspond one-to-one, and the protruding portion 93 is pressed against the electrode 102. 9, the protrusion 93 and the electrode 102 of the electronic device 9 are brought into contact with each other with high pressure. Thereafter, an inspection signal is input from the printed wiring board 7 to the probe unit 6 via the interposer 8. The input signal is transmitted from the electrode 100 of the interposer 8 to the probe 92, and is input to the electrode 102 of the electronic device 9 from the protrusion 93 formed on the probe 92.

  According to this embodiment, the thickness of the oxide film is increased from the lower center of the mask toward the outside by selective oxidation, and then the first surface of the substrate is etched with a high selectivity with respect to the oxide film. A recess formed by the first surface of the silicon oxide and the etched surface of the oxide film is formed. At this time, if DeepRIE, which has excellent anisotropy and selectivity, is used for etching the first surface of the substrate, it can be increased while controlling the deviation of the etching amount of the substrate, so that a deep recess that matches the target shape is formed. Can do. By forming the sacrificial film base layer on the deep recess, a highly convex curved surface can be formed in the sacrificial film base layer. By forming a probe on the curved surface of the sacrificial film underlayer, a probe unit in which the tip of the probe is greatly curved from the first surface to the second surface side can be manufactured. Even if the tip of this probe does not protrude from the second surface of the substrate, a protrusion that protrudes greatly from the second surface of the substrate is formed at the tip of the probe, so that the protrusion is brought into contact with the electrode of the electronic device. The displacement amount (overdrive amount) of the probe unit until the probe and the electrode are brought into conduction can be increased.

  In addition, according to the present embodiment, the probe is formed by a surface treatment process on a gentle curved surface having no bent portion, and therefore a curved probe having no bent portion can be integrally formed. Therefore, when the protruding portion formed on the probe is pressed against the electrode of the electronic device to be inspected, stress can be prevented from concentrating on a specific part of the probe, so that the durability of the probe can be improved. it can.

  Further, according to this embodiment, in order to form a probe that is curved from the first surface side to the second surface side of the substrate, the portion protruding from the inner peripheral edge of the probe substrate is surrounded by the substrate and protected by the substrate. can do. Therefore, the durability of the probe unit can be improved.

Sectional drawing which shows the manufacturing method of the probe unit by 1st Example of this invention. Sectional drawing which shows the manufacturing method of the probe unit by 1st Example of this invention. Sectional drawing which shows the manufacturing method of the probe unit by 1st Example of this invention. Sectional drawing which shows the manufacturing method of the probe unit by the 2nd Example of this invention. Sectional drawing which shows the manufacturing method of the probe unit by the 3rd Example of this invention. (A1), (A2) are plan views showing a method of manufacturing a probe unit according to the third embodiment of the present invention, (B1), (B2) are cross-sectional views taken along lines bb of (A1), (A2), (C1), (C2) is each cc line sectional drawing of (A1), (A2). (A) is a top view which shows the manufacturing method of the probe unit by 3rd Example of this invention, (B) is the bb sectional view taken on the line of (A), (C) is the cc sectional view of (A). Figure. (A1), (A2), (B1), (B2) are sectional views showing a method of manufacturing a probe unit according to the fourth embodiment of the present invention, (A3) is a plan view thereof, and (B3) is (A3) bb line sectional drawing, (C3) is the cc line sectional view of (A3). (A1), (A2) are plan views showing a method of manufacturing a probe unit according to a fifth embodiment of the present invention, (B1), (B2) are cross-sectional views taken along lines bb of (A1), (A2), (C1), (C2) is each cc line sectional drawing of (A1), (A2). (A1) is a plan view showing a method of manufacturing a probe unit according to the fifth embodiment of the present invention, (B1) is a sectional view taken along line bb of (A1), and (C1) is a sectional view taken along line cc of (A1). FIGS. 4A and 4B are cross-sectional views showing a method for manufacturing a probe unit according to a fifth embodiment of the present invention. (A1), (A2) are plan views showing a method of manufacturing a probe unit according to a fifth embodiment of the present invention, (B1), (B2) are cross-sectional views taken along lines bb of (A1), (A2), (C1), (C2) is each cc line sectional drawing of (A1), (A2). (A1), (A2) are plan views showing a method of manufacturing a probe unit according to a fifth embodiment of the present invention, (B1), (B2) are cross-sectional views taken along lines bb of (A1), (A2), (C1), (C2) is each cc line sectional drawing of (A1), (A2). (A) is a top view which shows the manufacturing method of the probe unit by 5th Example of this invention, (B) is the bb sectional view taken on the line of (A), (C) is the cc sectional view of (A). Figure. (A) is a top view which shows the manufacturing method of the probe unit by 5th Example of this invention, (B) is the bb sectional view taken on the line of (A), (C) is the cc sectional view of (A). The figure, (D) is the dd sectional view taken on the line of (A). (A) is a top view which shows the manufacturing method of the probe unit by 5th Example of this invention, (B) is the bb sectional view taken on the line of (A), (C) is the cc sectional view of (A). The figure, (D) is the dd sectional view taken on the line of (A). Sectional drawing which shows the manufacturing method of the probe unit by 6th Example of this invention. Sectional drawing which shows the manufacturing method of the probe unit by 6th Example of this invention. Sectional drawing which shows the manufacturing method of the probe unit by 6th Example of this invention. (A1), (A2) are plan views showing a method of manufacturing a probe unit according to a fifth embodiment of the present invention, (B1), (B2) are cross-sectional views taken along lines bb of (A1), (A2), (C1), (C2) is each cc line sectional drawing of (A1), (A2). (A) is a top view which shows the manufacturing method of the probe unit by 6th Example of this invention, (B) is the bb sectional view taken on the line of (A), (C) is the cc sectional view of (A). FIG. 4D is a perspective view of a probe unit according to the sixth embodiment of the present invention. Sectional drawing which shows the use condition of the probe unit by 6th Example of this invention.

Explanation of symbols

1, 2, 3, 4, 5, 5a, 6 probe unit, 10 (first) substrate, 10a, 50a, 70a first surface, 10b, 50b, 70b second surface, 11 curved surface, 12, 52, 78 through Groove, 12a, 52a, 78a Slit, 13 Inner peripheral edge of substrate, 14 Second substrate, 15, 51 Substrate (completed form), 20, 24, 62, 66, 92 Probe, 32, 54, 84 Sacrificial film underlayer , 34, 56, 86 Sacrificial film, 36, 58, 88 Resist film, 38, 60, 90 Slit, 50, 70 Substrate, 53 Edge, 71 Completed substrate, 72 Oxide film, 73 Completed substrate Perimeter, 74 recess, 80 Oxidation resistant mask

Claims (8)

Forming a conductive sacrificial layer on the first surface of the substrate;
Forming a mask having a slit on a flat second surface corresponding to the back surface of the first surface of the substrate;
Forming a through groove reaching the sacrificial layer directly under the slit by anisotropic etching of the substrate using the mask;
Forming a probe on the sacrificial layer in the through groove by plating;
A method for manufacturing a probe unit comprising:   The method of manufacturing a probe unit according to claim 1, further comprising a step of projecting the probe from an edge of the substrate by partial etching of the substrate after the step of forming the probe.   The probe according to claim 1, further comprising a step of projecting the probe from the second surface of the substrate by etching the second surface of the substrate after the step of forming the probe. Unit manufacturing method.   The method of manufacturing a probe unit according to claim 1, wherein the substrate is made of an inorganic insulator. Before forming the sacrificial layer, further comprising forming a curved surface on the first surface of the substrate;
In the step of forming the sacrificial layer, the sacrificial layer is formed on the curved surface,
The method of manufacturing a probe unit according to any one of claims 1 to 3, wherein, in the step of forming the through groove, the through groove reaching the curved surface is formed.   6. The method of manufacturing a probe unit according to claim 5, wherein, in the step of forming the curved surface, the convex curved surface is formed on the first surface of the substrate. Before the step of forming the curved surface,
Forming an oxide film on the first surface of the substrate;
Forming an oxidation-resistant mask on the oxide film;
Increasing the thickness of the oxide film from the lower center of the oxidation-resistant mask to the outside by selective oxidation;
Removing the oxidation-resistant mask,
The step of forming the curved surface includes forming a recess in the first surface of the substrate by removing the substrate and the oxide film by etching with a high selectivity of the substrate to the oxide film. Item 6. A method for manufacturing the probe unit according to Item 5. A substrate made of an insulating or semiconductor inorganic material having a slit;
A plurality of probes deposited in the slit;
A probe unit comprising:

Images