JP2006260995A - Method for generating characteristic x-ray from conductor material by low energy ion irradiation and its apparatus - Google Patents
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この出願の発明は、低エネルギーイオン照射による絶縁された導電体物質からの特性Ｘ線発生方法とその装置に関するものである。さらに詳しくは、この出願の発明は、低エネルギーイオンを用いて絶縁された導電体物質の特性Ｘ線を高効率にかつ小型、低コストの設備で得ることができる新規な特性Ｘ線発生方法とその装置に関するものである。 The invention of this application relates to a method and apparatus for generating characteristic X-rays from an insulated conductor material by low energy ion irradiation. More specifically, the invention of this application relates to a novel characteristic X-ray generation method capable of obtaining characteristic X-rays of a conductor material insulated using low-energy ions with high efficiency, small size, and low cost equipment. It relates to the device.
Ｘ線は工業、医学、科学研究などの分野で広く利用されており、そのなかでも特性Ｘ線は、各種材料の分析、評価、測定、観察などの種々の用途に用いられている。今まで、特性Ｘ線は、加速した電子線や高エネルギーイオンをターゲット材料に衝突させることにより発生させていた。その加速エネルギーは電子線で数ｋｅＶ〜数ＭｅＶのオーダー、高エネルギーイオンで数１００ｋｅＶ〜数ＭｅＶのオーダーである。 X-rays are widely used in fields such as industry, medicine, and scientific research. Among them, characteristic X-rays are used in various applications such as analysis, evaluation, measurement, and observation of various materials. Until now, characteristic X-rays have been generated by colliding an accelerated electron beam or high-energy ions with a target material. The acceleration energy is on the order of several keV to several MeV with an electron beam, and on the order of several hundred keV to several MeV with high energy ions.
しかしながら、従来の加速電子線及び高エネルギーイオンを照射する方法では、高額で大型の設備を必要とすることや、低エネルギー特性Ｘ線の発生効率が低いという問題があった。 However, the conventional method of irradiating accelerated electron beams and high-energy ions has problems that it requires expensive and large-sized facilities and low generation efficiency of low-energy characteristic X-rays.
この出願の発明は、以上のとおりの事情に鑑みてなされたもので、高額・大型の設備が必要なく、小型、低コストの設備で低エネルギー特性Ｘ線を効率良く発生させることが可能な新規な特性Ｘ線発生方法を提供することを課題とする。 The invention of this application was made in view of the circumstances as described above, and does not require expensive and large equipment, and is capable of generating low energy characteristic X-rays efficiently with small and low-cost equipment. It is an object to provide a method for generating characteristic X-rays.
この出願の発明は、上記課題を解決するものとして、第１には、２から１００ｋｅＶの低エネルギーを有する正イオンを、軽元素及び重元素の少なくともいずれかの元素を含む絶縁された導電体材料ターゲットへ照射することにより、導電体材料ターゲット中に含まれる軽元素又は重元素から４ｋｅＶ以下の低エネルギー特性Ｘ線を発生させることを特徴とする特性Ｘ線発生方法を提供する。 In order to solve the above-mentioned problems, the invention of this application is as follows. First, an insulated conductor material containing positive ions having a low energy of 2 to 100 keV and at least one of light elements and heavy elements. Provided is a characteristic X-ray generation method characterized by generating a low energy characteristic X-ray of 4 keV or less from a light element or heavy element contained in a conductive material target by irradiating the target.
また、第２には、上記第１の発明において、軽元素が原子番号４番から１７番の元素であることを、第３には、上記第１の発明において、重元素が原子番号１８番以上の元素であることを、第４には、上記第１から第３のいずれかの発明において、正イオンビームを電場及び磁場の少くともいずれかの印加により集束させることを特徴とする特性Ｘ線発生方法を提供する。 Second, in the first invention, the light element is an element having an atomic number of 4 to 17, and third, in the first invention, the heavy element is an atomic number of 18th. Fourthly, the characteristic X is that the positive ion beam is focused by applying at least one of an electric field and a magnetic field in any one of the first to third inventions. Provide a method of generating lines.
そして、第５には、上記第１から第４のいずれかの発明において、正イオンビームを電場及び磁場の少くともいずれかの印加により導電体材料ターゲット上で走査させることを、第６には、上記第１から第５のいずれかの発明において、導電体材料ターゲットの温度を変化させることを特徴とする特性Ｘ線発生方法を提供する。 In a fifth aspect, in any of the first to fourth aspects, the positive ion beam is scanned on the conductive material target by applying at least one of an electric field and a magnetic field. In any one of the first to fifth inventions, there is provided a characteristic X-ray generation method characterized in that the temperature of the conductor material target is changed.
さらに、この出願の発明は、第７には、２から１００ｋｅＶの低エネルギーを有する正イオンを、軽元素及び重元素の少なくともいずれかの元素を含む絶縁された導電体材料ターゲットに照射するイオン発生源と、導電体材料ターゲットを載置する絶縁体ステージと、正イオンの照射により導電体材料ターゲット中に含まれる軽元素又は重元素から発生する特性Ｘ線を検出するＸ線検出器とを備えていることを特徴とする特性X線発生装置を提
供する。
Further, according to the invention of the present application, seventhly, ion generation is performed by irradiating an insulated conductor material target containing a positive ion having a low energy of 2 to 100 keV and containing at least one of a light element and a heavy element. A source, an insulator stage on which the conductor material target is placed, and an X-ray detector for detecting characteristic X-rays generated from light elements or heavy elements contained in the conductor material target by irradiation with positive ions Provided is a characteristic X-ray generator characterized by
また、第８には、上記第７の発明において、軽元素が原子番号４番から１７番の元素であることを、第９には、上記第７の発明において、重元素が原子番号１８番以上の元素であることを、第１０には、上記第７から第９のいずれかの発明において、正イオンビームを電場及び磁場の少なくともいずれかの印加により集束させることを特徴とする特性Ｘ線発生装置を提供する。 Eighth, in the seventh invention, the light element is an element having an atomic number of 4 to 17, and ninth, in the seventh invention, the heavy element is an atomic number of 18th. Tenth, the characteristic X-ray is characterized in that, in any of the seventh to ninth inventions, the positive ion beam is focused by applying at least one of an electric field and a magnetic field. A generator is provided.
さらに、第１１には、上記第７から第１０のいずれかの発明において、正イオンビームを電場及び磁場の少なくともいずれかの印加により導電体材料ターゲット上で走査させることを、第１２には上記第７から第１１のいずれかの発明において、導電体材料ターゲットの温度を変化させることを特徴とする特性Ｘ線発生装置を提供する。 Furthermore, eleventhly, in any one of the seventh to tenth inventions, the positive ion beam is scanned on the conductive material target by applying at least one of an electric field and a magnetic field, and twelfth, In any one of the seventh to eleventh inventions, there is provided a characteristic X-ray generator characterized in that the temperature of a conductor material target is changed.
この出願の発明によれば、低エネルギーの正イオンを、軽元素及び重元素の少くともいずれかの元素を含む絶縁された導電体材料ターゲットに照射させることにより、従来の電子線照射励起により特性Ｘ線を発生する方法に比べ、低エネルギーの特性Ｘ線を高効率で発生することができ、また従来の高エネルギーイオン照射励起により特性Ｘ線を発生する方法に比べ、イオンの加速電圧は１桁から数桁低く、設備の小型化、低コスト化ができる。 According to the invention of this application, by irradiating a low-energy positive ion to an insulated conductor material target containing at least one of a light element and a heavy element, characteristics can be obtained by conventional electron beam irradiation excitation. Compared with the method of generating X-rays, low-energy characteristic X-rays can be generated with high efficiency, and the ion acceleration voltage is 1 compared with the conventional method of generating characteristic X-rays by high-energy ion irradiation excitation. The size can be reduced by several orders of magnitude to reduce the size and cost of the equipment.
従来は、低エネルギーの正イオンを導電体材料ターゲットに照射して、導電体体材料ターゲットに含まれる軽元素あるいは重元素の低エネルギー特性Ｘ線を発生できることは知られていなかった。この出願の発明の技術は、低エネルギーの正イオンを用いて軽元素あるいは重元素の低エネルギー特性Ｘ線（特にＸ線エネルギー約４ｋｅＶ以下）を高効率で発生させるという今までの常識を破る斬新な方法であり、物理、化学、生物、医薬などの分野においても、基礎的な研究及びＸ線を利用する新方法、低エネルギー単色Ｘ線発生装置、新しい材料分析・評価装置などの開発に大きく寄与するものと期待される。この出願の発明は基本技術として非常に大きな効果を持つものと期待される。 Conventionally, it has not been known that low energy positive X-rays of light elements or heavy elements contained in a conductor material target can be generated by irradiating the conductor material target with positive ions of low energy. The technology of the invention of this application is a novelty that breaks the conventional wisdom of generating low-energy characteristic X-rays of light elements or heavy elements (especially X-ray energy of about 4 keV or less) with high efficiency using low-energy positive ions. In the fields of physics, chemistry, biology, medicine, etc., it is also greatly used for basic research and development of new methods using X-rays, low-energy monochromatic X-ray generators, new material analysis / evaluation devices, etc. Expected to contribute. The invention of this application is expected to have a very large effect as a basic technology.
この出願の発明は上記のとおりの特徴をもつものであるが、以下にその実施の形態について説明する。 The invention of this application has the features as described above, and an embodiment thereof will be described below.
この出願の発明は、２から１００ｋｅＶの低エネルギーを有する正イオンを、軽元素及び重元素の少くともいずれかの元素を含む絶縁された導電体材料ターゲットへ照射することにより、導電体材料ターゲット中に含まれる軽元素又は重元素から４ｋｅＶ以下の低エネルギー特性Ｘ線を発生させることを特徴とする。 The invention of this application irradiates an insulated conductor material target containing at least one of a light element and a heavy element with positive ions having a low energy of 2 to 100 keV. A low energy characteristic X-ray of 4 keV or less is generated from a light element or heavy element contained in.
正イオンとしてはいずれの正イオンも使用可能であるが、好ましいものとしては、Ｇａ＋イオンや、周期表１８族元素の正イオンであるＨｅ＋、Ｎｅ＋、Ａｒ＋、Ｋｒ＋、Ｘｅ＋等が例示される。これらの正イオンはターゲット物質と化学反応しないなどの利点がある。 Any positive ion can be used as the positive ion, but preferable ones include Ga + ions and He + , Ne + , Ar + , Kr + , Xe + and the like, which are positive ions of Group 18 elements of the periodic table. Is exemplified. These positive ions have the advantage that they do not chemically react with the target substance.
正イオンのエネルギー（加速電圧）は２から１００ｋｅＶであるが、そのエネルギーは正イオンの種類によって変わる。正イオンのエネルギーが上記範囲より高くなると、大型の設備が必要なく小型、低コストの設備で軽元素あるいは重元素の低エネルギー特性Ｘ線を効率良く発生させるという所期の目的を達成することができない。正イオンのエネルギーが上記範囲より低くなると、軽元素あるいは重元素の低エネルギー特性Ｘ線を効率良く発生させることができなくなる。 The energy (acceleration voltage) of positive ions is 2 to 100 keV, but the energy varies depending on the type of positive ions. When the energy of the positive ions is higher than the above range, the intended purpose of efficiently generating low energy characteristic X-rays of light elements or heavy elements can be achieved with small and low cost equipment without the need for large equipment. Can not. If the energy of the positive ions is lower than the above range, low energy characteristic X-rays of light elements or heavy elements cannot be efficiently generated.
この出願の発明により発生する特性Ｘ線のエネルギーは４ｋｅＶ以下の低エネルギーのものであり、その下限値は０．１ｋｅＶ程度である。 The energy of the characteristic X-ray generated by the invention of this application is low energy of 4 keV or less, and the lower limit is about 0.1 keV.
この出願の明細書において、軽元素とは原子番号４番から１７番までのものをいう。軽元素を含む導電体材料を例示すると、Ｃ、Ａｌ、Ｓｉ、あるいは導電性合金、導電性化合物などを挙げることができる。また、この出願の明細書において、重元素とは原子番号１８以上のものをいう。重元素を含む導電体材料を例示すると、Ｃｕ、Ｉｎ、Ａｕ、あるいはこれらを含む導電性合金、導電性化合物などを挙げることができる。導電性合金の例としてはステンレス鋼、ＴｉＡｌなど、導電性化合物の例としてはＳｉＣ、ＧａＡｓなどがある。 In the specification of this application, light elements refer to those having atomic numbers 4 to 17. Examples of conductive materials containing light elements include C, Al, Si, conductive alloys, conductive compounds, and the like. In the specification of this application, the heavy element means an element having an atomic number of 18 or more. Examples of the conductive material containing a heavy element include Cu, In, Au, or a conductive alloy or conductive compound containing these. Examples of the conductive alloy include stainless steel and TiAl, and examples of the conductive compound include SiC and GaAs.
そして、上記の導電体材料は、例えば、ＳｉＯ２、ＮａＣｌ、ＭｇＯなどの絶縁体ステージに導電体材料を蒸着して、電気的に孤立した絶縁状態にする。導電体材料を絶縁状態とする理由は、入射低エネルギー正イオンは絶縁された導電体材料表面と衝突し、その表面と物理的に、化学的に相互作用し、導電体材料に含まれる元素の特性Ｘ線を励起するからである。導電体材料の絶縁体ステージへの蒸着方法としては、真空蒸着法、スパッター法などがあるが、これに限定されることはない。 For example, the conductive material is vapor-deposited on an insulating stage such as SiO 2 , NaCl, or MgO to obtain an electrically isolated insulating state. The reason why the conductor material is in an insulating state is that incident low energy positive ions collide with the surface of the insulated conductor material, physically and chemically interact with the surface, and the elements contained in the conductor material. This is because the characteristic X-rays are excited. Examples of the method for depositing the conductor material on the insulator stage include, but are not limited to, a vacuum deposition method and a sputtering method.
この出願の方法による元素特性Ｘ線発生の原理を模式的に図１に示す。上記の範囲の低エネルギー正イオンを導電体材料ターゲットに照射すると、照射イオンは導電体材料と相互作用をし、導電体材料に含まれる原子の内殻電子空孔を生成させ、外側電子殻からその空孔への電子遷移により、特性Ｘ線が発生する。 The principle of element characteristic X-ray generation by the method of this application is schematically shown in FIG. When the conductive material target is irradiated with the low energy positive ions in the above range, the irradiated ions interact with the conductive material to generate inner electron vacancies of atoms contained in the conductive material, and from the outer electron shell. Characteristic X-rays are generated by the electron transition to the holes.
また、表１に、この出願の発明による特性Ｘ線発生方法と既存の代表的な特性Ｘ線発生方法を比較して示す。 Table 1 shows a comparison between a characteristic X-ray generation method according to the invention of this application and an existing typical characteristic X-ray generation method.
この出願の発明では、特性Ｘ線の発生させる際に、発生効率を制御する目的で、導電体
材料ターゲットの温度を変化させてもよいし、導電体材料ターゲットを真空中に配置してもよい。温度を変化させる場合には、実験装置に実現できる、導電体材料ターゲットを絶縁体ステージに保てる温度範囲の間であれば任意の温度とすることができる。たとえばＡｌに対しては−２６９℃（Ｈｅの液化温度）〜６６０℃（Ａｌの融点）、Ｃｕに対しては−２６９℃〜１０８４℃（Ｃｕの融点）とすることができる。また、導電体材料ターゲットは、希ガス中に配置してもよい。
In the invention of this application, when generating characteristic X-rays, the temperature of the conductor material target may be changed for the purpose of controlling the generation efficiency, or the conductor material target may be arranged in a vacuum. . In the case of changing the temperature, the temperature can be set to any temperature as long as it is within a temperature range that can be realized in an experimental apparatus and can maintain the conductor material target on the insulator stage. For example, it can be -269 ° C (He liquefaction temperature) to 660 ° C (Al melting point) for Al, and -269 ° C to 1084 ° C (Cu melting point) for Cu. The conductor material target may be disposed in a rare gas.
また、導電体材料ターゲットの照射位置の制御のために、イオンビームに、磁場及び電場の少くともいずれかを印加して収束させたり、走査させたりしてもよい。 In addition, in order to control the irradiation position of the conductive material target, at least one of a magnetic field and an electric field may be applied to the ion beam so as to be converged or scanned.
次に、この出願の発明による実施例を示す。もちろん、この出願の発明は前述の実施の形態及び以下の例に限定されるものではなく、細部については様々な態様が可能であることは言うまでもない。 Next, examples according to the invention of this application will be described. Of course, the invention of this application is not limited to the above-described embodiments and the following examples, and it goes without saying that various aspects are possible in detail.
＜実施例１＞
低エネルギー正イオンとして１０ｋｅＶのＧａ＋イオン、導電体材料ターゲットとしてＡｌを真空蒸着法でＳｉＯ２製の絶縁体ステージ上に蒸着した。チャンバーの真空度は１×１０−５Ｐａより高真空にした。Ｘ線の検出はＳｉ（Ｌｉ）Ｘ線エネルギー分光検出器を用いた。
<Example 1>
10 keV Ga + ions as low energy positive ions and Al as a conductor material target were deposited on an insulator stage made of SiO 2 by a vacuum deposition method. The degree of vacuum of the chamber was higher than 1 × 10 −5 Pa. For detection of X-rays, a Si (Li) X-ray energy spectroscopic detector was used.
室温で低エネルギー正イオンＧａ＋をターゲット材料に照射すると、Ｘ線エネルギー分光検出器により、ターゲット材料の特性Ｘ線が検出された。図２（ａ）にこの実施例において低エネルギーイオン照射により励起されたＸ線スペクトルを示す。また、比較のために、同じ導電体ターゲットを用い１０ｋｅＶの高加速電子ビーム照射により励起されたＸ線スペクトルを示す。この図に現れたスペクトルを比較すると、電子線に比べ、低エネルギーイオンにより励起された特性Ｘ線では、導電体材料（Ａｌ）の特性Ｘ線の励起効率が高いことが確認された。 When the target material was irradiated with low energy positive ions Ga + at room temperature, the characteristic X-rays of the target material were detected by the X-ray energy spectroscopic detector. FIG. 2A shows an X-ray spectrum excited by low energy ion irradiation in this example. For comparison, an X-ray spectrum excited by 10 keV high acceleration electron beam irradiation using the same conductor target is shown. When the spectra appearing in this figure were compared, it was confirmed that the characteristic X-rays excited by low energy ions had higher excitation efficiency of the characteristic X-rays of the conductor material (Al) than the electron beam.
実施例２
低エネルギー正イオンとして３０ｋｅＶのＧａ＋イオン、導電体材料ターゲットとしてＩｎを真空蒸着法でＳｉＯ２製の絶縁体ステージ上に蒸着した。チャンバーの真空度は１×１０−５Ｐａより高真空にした。Ｘ線の検出はＳｉ（Ｌｉ）Ｘ線エネルギー分光検出器を用いた。
Example 2
30 keV Ga + ions as low energy positive ions and In as a conductor material target were vapor-deposited on an insulator stage made of SiO 2 by a vacuum vapor deposition method. The degree of vacuum of the chamber was higher than 1 × 10 −5 Pa. For detection of X-rays, a Si (Li) X-ray energy spectroscopic detector was used.
室温で低エネルギー正イオンＧａ＋をターゲット材料に照射すると、Ｘ線エネルギー分光検出器により、ターゲット材料の特性Ｘ線が検出された。図２（ｂ）にこの実施例において低エネルギーイオン照射により励起されたＸ線スペクトルを示す。この図に現れたスペクトルから、低エネルギーイオンにより励起された導電体材料（Ｉｎ）の特性Ｘ線が効率的に励起されることが確認された。 When the target material was irradiated with low energy positive ions Ga + at room temperature, the characteristic X-rays of the target material were detected by the X-ray energy spectroscopic detector. FIG. 2B shows an X-ray spectrum excited by low energy ion irradiation in this example. From the spectrum appearing in this figure, it was confirmed that the characteristic X-rays of the conductor material (In) excited by the low energy ions are efficiently excited.
Claims (12)
導電体材料ターゲットを載置する絶縁体ステージと、
正イオンの照射により導電体材料ターゲット中に含まれる軽元素又は重元素から発生する特性Ｘ線を検出するＸ線検出器とを備えていることを特徴とする特性X線発生装置。 An ion source that irradiates an insulated conductor material target containing positive ions having a low energy of 2 to 100 keV and containing at least one of a light element and a heavy element;
An insulator stage for placing a conductor material target;
An apparatus for generating characteristic X-rays, comprising: an X-ray detector for detecting characteristic X-rays generated from light elements or heavy elements contained in a conductive material target by irradiation with positive ions.
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| EP3336875A1 (en) * | 2016-12-16 | 2018-06-20 | Excillum AB | Semiconductor x-ray target |
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| WO2018109176A1 (en) * | 2016-12-16 | 2018-06-21 | Excillum Ab | Semiconductor x-ray target |
| US10971323B1 (en) | 2016-12-16 | 2021-04-06 | Excillum Ab | Semiconductor X-ray target |
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| JP4735805B2 (en) | 2011-07-27 |
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