JP2006253524A - Transfer method for semiconductor substrate and conveyance apparatus used therefor - Google Patents

Transfer method for semiconductor substrate and conveyance apparatus used therefor Download PDF

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JP2006253524A
JP2006253524A JP2005070370A JP2005070370A JP2006253524A JP 2006253524 A JP2006253524 A JP 2006253524A JP 2005070370 A JP2005070370 A JP 2005070370A JP 2005070370 A JP2005070370 A JP 2005070370A JP 2006253524 A JP2006253524 A JP 2006253524A
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substrate
suction pad
grinding
annular suction
annular
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JP4705387B2 (en
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Hirotaka Okonogi
弘孝 小此木
Katsumi Tsuji
克巳 辻
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Okamoto Machine Tool Works Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for transferring a substrate from the grinding stage to the cleaning stage, the method that reduces minute particles firmly adhering to a grinding mark groove of a back ground semiconductor substrate. <P>SOLUTION: The surface of the substrate with a printed wiring is coated by a protective tape. The protective tape side of the semiconductor substrate is disposed in face to face with a porous ceramic chuck 12, and the backside of the substrate is polished by grinding stones 16a, 16b. On completion of grinding, an annular suction pad open above and below on a conveyor is brought into contact with the backside of the polished substrate, while feeding washing liquid 60 onto the polished substrate on its backside. The substrate is shifted to a washing spinner 10 with the washing liquid film existent inside a recessed gap formed by the upper face of the substrate and the lower face of the annular sucking pad. As the substrate is conveyed with its polishing surface kept wet, fine particles can be prevented from getting fixed and can be removed easily during spin washing. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、半導体基板の裏面研削加工ステ−ジから半導体基板の洗浄ステ−ジへ半導体基板をウエットの状態で受け渡す方法、およびその半導体基板の受け渡しに用いる搬送機器に関する。本発明の湿式(ウエット)受け渡し方法によれば、研削加工された半導体基板の裏面に付着する極微小異物(パ−チクル)の量を低減した半導体基板を得ることが可能である。   The present invention relates to a method of transferring a semiconductor substrate in a wet state from a back grinding process stage of a semiconductor substrate to a cleaning stage of the semiconductor substrate, and a transfer device used for transferring the semiconductor substrate. According to the wet (wet) delivery method of the present invention, it is possible to obtain a semiconductor substrate in which the amount of extremely small foreign matter (particles) adhering to the back surface of the ground semiconductor substrate is reduced.

半導体基板の裏面研削装置において、プリント配線が施された基板表面を保護テ−プで被覆し、この保護テ−プ面をポ−ラスセラミック製チャックに対向させて載置された半導体基板の裏面を砥石で研削し、この裏面研削された基板表面に洗浄液を吹き付けながらブラシ洗浄し、搬送機器の吸着パッドに当該ブラシ洗浄された研削基板裏面を吸着させ、搬送機器の吸着パッドを回転移動させて洗浄スピナ−上に前記ブラシ洗浄された研削基板裏面を上に向けて移し変え、洗浄スピナ−で基板表面および裏面を洗浄することが実施されている(例えば、特許文献1、特許文献2参照。)。   In a semiconductor substrate back surface grinding apparatus, a substrate surface on which printed wiring is applied is covered with a protective tape, and the back surface of the semiconductor substrate placed with the protective tape surface facing a porous ceramic chuck The surface of the substrate that has been ground by back surface is brush-washed while spraying the cleaning liquid onto the back-ground substrate surface, the back surface of the ground substrate that has been brush-washed is adsorbed to the suction pad of the transport device, and the suction pad of the transport device is rotated. It has been practiced that the back surface of the ground substrate subjected to brush cleaning is transferred upward onto a cleaning spinner, and the front surface and the back surface of the substrate are cleaned with a cleaning spinner (see, for example, Patent Document 1 and Patent Document 2). ).

かかる基板の研削装置の一具体例として、図8に基板の裏面研削装置を示す。この裏面研削装置は、インデックステ−ブル13に設けられたポ−ラスセラミック製チャック12上に離間して設けたレ−ル14にブラシ洗浄機構15aとセラミック製竿を備えたチャッククリ−ナ(チャック洗浄機構)15bを対として横方向に走行可能とした洗浄機器15を備えるインデックス型の裏面研削装置であり、チャック12上に載置されている研削砥石16dで裏面研削加工された基板上にブラシ洗浄機構15aを走行させ、基板に洗浄液を供給しながら回転しているブラシを下降させて基板を洗浄し、ついで、ブラシを上昇させ、搬送機器17の搬送パッド17aで洗浄された裏面研削加工基板を洗浄スピナ−10上へと搬送した後、前記チャッククリ−ナ15bをチャック12上に走行させ、チャック12面に洗浄液を供給しながら回転しているセラミック製竿を下降させてチャックを洗浄している(例えば、特許文献1参照。)。   As a specific example of such a substrate grinding apparatus, FIG. 8 shows a substrate back surface grinding apparatus. This back grinding apparatus has a chuck cleaner (a brush 14 provided with a brush cleaning mechanism 15a and a ceramic iron on a rail 14 provided on a porous ceramic chuck 12 provided on an index table 13 at a distance. This is an index-type back surface grinding apparatus having a cleaning device 15 that can travel in the lateral direction with a chuck cleaning mechanism) 15b as a pair, on a substrate that has been back-ground by a grinding wheel 16d mounted on the chuck 12. The brush cleaning mechanism 15a is run, the rotating brush is lowered while supplying the cleaning liquid to the substrate, the substrate is cleaned, then the brush is lifted, and the back surface grinding processed by the transfer pad 17a of the transfer device 17 is cleaned. After the substrate is transferred onto the cleaning spinner 10, the chuck cleaner 15b is run on the chuck 12, and the cleaning liquid is supplied to the surface of the chuck 12. Lowering the ceramic rod which is rotating are washed chuck with (e.g., see Patent Document 1.).

また、インゴットをスライスして得られた基板 を砥石で研削して得られた研削基板 を、pHが12以上のアルカリ洗浄液に浸漬し、次いで超音波 を照射してアルカリ洗浄 ・超音波 洗浄 することにより研削基板 の溝や研削条痕に挟まれている加工屑や残滓を除去した後、該基板 表面に、該基板 のモ−ス硬度と同等または柔らかいモ−ス硬度を有する固型砥粒を結合材で結合してなる研磨加工具を押し付け、研削基板 および研磨加工具を相対運動させて基板 表面を平坦化することを特徴とする乾式化学機械研磨方法も提案されている(例えば、特許文献3参照。)。   In addition, a ground substrate obtained by grinding a substrate obtained by slicing an ingot with a grindstone is immersed in an alkaline cleaning solution having a pH of 12 or more, and then irradiated with ultrasonic waves to perform alkali cleaning / ultrasonic cleaning. After removing the processing scraps and residues sandwiched between the grooves and the grinding striations of the grinding substrate, solid abrasive grains having a Mohs hardness equal to or softer than the Mohs hardness of the substrate are applied to the surface of the substrate. There has also been proposed a dry chemical mechanical polishing method characterized in that a polishing tool formed by bonding with a binder is pressed, and the surface of the substrate is flattened by relatively moving the grinding substrate and the polishing tool (for example, Patent Documents). 3).

さらに、最近では洗浄スピナ−として、洗浄された半導体基板に付着する極微小異物(パ−チクル)の量を低減させるために、薬液槽に蓄えられた2種類の薬液と純水との調合液に超音波振動を付与しながら薬液吹付ノズルよりスピナ−上の基板面上に調合液を供給させ、スピン液相洗浄することも提案されている(例えば、特許文献4および特許文献5参照。)。
特開平11−307489号公報(第3−5頁および図1、図3参照) 特開2003−282673号公報(第3−5頁および図1、図2参照) 特開2004−235201号公報(第4−8頁および図3図参照) 特開2003−179118号公報(第2−8頁および図10参照) 特開2004−259742号公報(第2−8頁および図2、図1参照)
Furthermore, recently, as a cleaning spinner, in order to reduce the amount of minute foreign matter (particles) adhering to the cleaned semiconductor substrate, a liquid mixture of two types of chemicals stored in the chemical tank and pure water It has also been proposed to supply a preparation liquid onto a substrate surface on a spinner from a chemical spray nozzle while applying ultrasonic vibration to the substrate and perform spin liquid phase cleaning (see, for example, Patent Document 4 and Patent Document 5). .
Japanese Patent Laid-Open No. 11-307489 (see page 3-5 and FIGS. 1 and 3) JP 2003-282673 A (see page 3-5 and FIGS. 1 and 2) Japanese Patent Laid-Open No. 2004-235201 (see page 4-8 and FIG. 3) JP 2003-179118 A (see page 2-8 and FIG. 10) JP 2004-259742 A (see page 2-8 and FIGS. 2 and 1)

特許文献1および2に記載される搬送パッド17を用いて裏面研削加工ステ−ジ(図8ではロ−ディング/アンロ−ディングステ−ジsにあるチャック12が相当する)に在る半導体基板裏面を吸着して半導体基板の洗浄ステ−ジへと半導体基板を受け渡す方法は、半導体基板が乾燥して洗浄スピナ−10(洗浄ステ−ジ)へと移送されている。それゆえ、一度乾燥して基板裏面の研削条痕の溝に付着した極微小異物は、洗浄ステ−ジでの洗浄において超音波を印加した洗浄液を用いてスピン洗浄しても容易には除去できない欠点がある。 A semiconductor substrate in a back grinding stage (corresponding to the chuck 12 in the loading / unloading stage s 1 in FIG. 8) using the transfer pad 17 described in Patent Documents 1 and 2. In the method of adsorbing the back surface and delivering the semiconductor substrate to the cleaning stage of the semiconductor substrate, the semiconductor substrate is dried and transferred to the cleaning spinner 10 (cleaning stage). Therefore, the very small foreign matter once dried and adhering to the groove of the grinding mark on the back side of the substrate cannot be easily removed by spin cleaning using a cleaning liquid to which ultrasonic waves are applied in cleaning at the cleaning stage. There are drawbacks.

本発明の目的は、搬送機器の吸着パッド構造を上下部開放型の環状体とし、裏面研削加工ステ−ジから半導体基板の洗浄ステ−ジへ半導体基板を受け渡す際、基板上面と環状吸着パッド下面とで形成される凹部空所に洗浄液膜が存在するウエットな状態で半導体基板を搬送することにより極微小異物の乾燥・固着を防ぎ、洗浄液膜中に極微小異物を浮遊した状態に保つことにより次工程の洗浄ステ−ジでの極微小異物の除去を95%以上可能とした基板の受け渡し方法の提供、および、それに用いる搬送機器の提供にある。   An object of the present invention is to form a suction pad structure of a transfer device in an upper and lower open type annular body, and when transferring a semiconductor substrate from a back grinding process stage to a semiconductor substrate cleaning stage, the upper surface of the substrate and the annular suction pad By transporting the semiconductor substrate in a wet state where the cleaning liquid film exists in the recess space formed between the bottom and the bottom surface, it is possible to prevent the extremely small foreign matter from drying and sticking and to keep the very small foreign matter floating in the cleaning liquid film. Accordingly, the present invention is to provide a substrate delivery method capable of removing 95% or more of ultrafine foreign substances in the cleaning stage of the next process, and to provide a transport device used therefor.

請求項1の発明は、プリント配線が施された基板表面を保護テ−プで被覆し、この保護テ−プ面をポ−ラスセラミック製チャックに対向させて載置された半導体基板の裏面を砥石で研削し、研削終了後、この裏面研削された基板面に洗浄液を供給しながら搬送機器の上下部開放型の環状吸着パッドを当該研削基板裏面に当接させて基板を吸着させ、基板上面と前記環状吸着パッド下面とで形成される凹部空所に洗浄液膜が存在する状態で基板を洗浄ステ−ジであるスピナ−へと受け渡すことを特徴とする、半導体基板の受け渡し方法を提供するものである。   According to the first aspect of the present invention, the back surface of the semiconductor substrate placed on the substrate surface on which the printed wiring is applied is covered with a protective tape and the protective tape surface is opposed to the porous ceramic chuck. After grinding with a grindstone, while supplying the cleaning liquid to the back-ground ground substrate surface, the upper and lower open-type annular suction pads of the transfer device are brought into contact with the back surface of the ground substrate to adsorb the substrate, and the upper surface of the substrate And a method of transferring a semiconductor substrate, wherein the substrate is transferred to a spinner as a cleaning stage in a state in which a cleaning liquid film exists in a recess space formed by the lower surface of the annular suction pad. Is.

請求項2の発明は、
上下に通じる刳貫き部を有し、環状底面に複数個の真空孔が穿たれた環状吸着パッド、
当該環状吸着パッドの環状上面に設けられ、環状吸着パッドの前記真空孔に通じる減圧手段、
当該環状吸着パッドの上面で環状吸着パッドを固定するパッド押さえ固定具、
当該パッド押さえ固定具を回転自在に支持する旋回ア−ム、
当該旋回ア−ムを昇降および旋回または直線進退可能に移動させる移動機構、
および、
前記環状吸着パッドの上方より当該環状吸着パッドの刳貫き部へ洗浄液を供給する洗浄液供給手段
を設けたことを特徴とする基板搬送機器を提供するものである。
The invention of claim 2
An annular suction pad having a piercing portion that communicates vertically and having a plurality of vacuum holes in the annular bottom surface,
A pressure reducing means provided on the annular upper surface of the annular suction pad and leading to the vacuum hole of the annular suction pad;
A pad holding fixture for fixing the annular suction pad on the upper surface of the annular suction pad;
A swivel arm that rotatably supports the pad pressing fixture;
A moving mechanism for moving the swivel arm so that the swivel arm can be moved up and down and swiveled or moved back and forth linearly;
and,
The present invention provides a substrate transport device provided with a cleaning liquid supply means for supplying a cleaning liquid from above the annular suction pad to a penetration portion of the annular suction pad.

裏面研削された基板は、当該基板上面(研削面)と環状吸着パッドの上下に通じる刳貫き部とで形成される凹部空所に滞り洗浄液膜を張ることにより半導体基板裏面をウエットの状態を保って研削ステ−ジから洗浄ステ−ジへと受け渡されるので、洗浄ステ−ジでの極微小異物の除去が容易であり、95%以上の極微小異物が裏面研削された基板面より除去される。   The substrate ground on the back surface keeps the back surface of the semiconductor substrate wet by stagnation in a recess space formed by the upper surface (grinding surface) of the substrate and the pierced portion communicating with the upper and lower sides of the annular suction pad. Therefore, it is easy to remove the very small foreign matter on the cleaning stage, and more than 95% of the very small foreign matter is removed from the back-ground substrate surface. The

以下、図を用いて本発明をさらに詳細に説明する。
図1は本発明の基板搬送機器の斜視図、図2は本発明の基板用搬送機器の正面図、図3は基板用搬送機器の環状吸着パッドの底面図、図4は環状吸着パッドの上面図、図5は環状吸着パッドの断面図で、図4におけるA−A切断面を示す。図6は基板搬送機器の側面図、および図7は裏面研削装置の平面図である。
Hereinafter, the present invention will be described in more detail with reference to the drawings.
1 is a perspective view of a substrate transfer device according to the present invention, FIG. 2 is a front view of the substrate transfer device according to the present invention, FIG. 3 is a bottom view of an annular suction pad of the substrate transfer device, and FIG. FIG. 5 and FIG. 5 are cross-sectional views of the annular suction pad, showing the AA cut surface in FIG. FIG. 6 is a side view of the substrate transfer apparatus, and FIG. 7 is a plan view of the back surface grinding apparatus.

図1乃至図6に示す基板搬送機器30において、17’aはヘッド部分の環状吸着パッドで、上下に通じる直径36mmの刳貫き部30aを有し、上面に直径が2〜6mmの4個の吸着連絡孔30bが穿たれ、底面部に幅1mm、深さ1mmの円弧状溝30dが設けられ、この円弧状溝に直径0.5〜1.5mmの複数の真空孔30eが設けられた外直径が約165mm、高さが15mmの環状吸着パッドである。前記吸着連絡孔30bは、当該環状吸着パッド17’aの環状上面に設けられ、環状吸着パッドの底面に設けた真空孔30eに通じる。この吸着連絡孔30bの他端は、減圧手段31のホ−ス32に連結されている。この環状吸着パッド17’aの底部中央部30fは外周部30cより0.5〜1mm低くしてある。この環状吸着パッド17’a素材は、ポリ(四弗化エチレン)、ポリ(ジフロロ−ジクロロエチレン)、ナイロン6、ナイロン6,10、ポリアセタ−ル、ガラス繊維補強エポキシ樹脂、ガラス繊維補強ポリブチレンテレフタレ−ト、セラミック、アルミニウム、ステンレス等のロックウエル硬度がD50以上のものが好ましい。   In the substrate transfer device 30 shown in FIGS. 1 to 6, 17′a is an annular suction pad of the head portion, which has a piercing portion 30a having a diameter of 36 mm that communicates with the top and bottom, and four pieces having a diameter of 2 to 6 mm on the upper surface. An adsorption communication hole 30b is formed, an arc-shaped groove 30d having a width of 1 mm and a depth of 1 mm is provided on the bottom surface, and a plurality of vacuum holes 30e having a diameter of 0.5 to 1.5 mm are provided in the arc-shaped groove. An annular suction pad having a diameter of about 165 mm and a height of 15 mm. The suction communication hole 30b is provided on the annular upper surface of the annular suction pad 17'a and communicates with a vacuum hole 30e provided on the bottom surface of the annular suction pad. The other end of the suction communication hole 30 b is connected to the hose 32 of the decompression means 31. The bottom central portion 30f of the annular suction pad 17'a is 0.5 to 1 mm lower than the outer peripheral portion 30c. The material of this annular suction pad 17'a is poly (tetrafluoroethylene), poly (difluoro-dichloroethylene), nylon 6, nylon 6,10, polyacetal, glass fiber reinforced epoxy resin, glass fiber reinforced polybutylene terephthalate. -It is preferable that the Rockwell hardness is D50 or higher, such as G, ceramic, aluminum, and stainless steel.

図1および図2に示されるように環状吸着パッドの円弧状溝30dに設けられた真空孔30eを減圧する減圧手段31は、ポリウレタンコイル32、結合材(ユニオン)33、流体通路連結管34、ホ−ス固定具35、真空ポンプ(図示されていない)、およびこの真空ポンプに連結する継手36よりなる。真空ポンプを減圧駆動すると、その減圧は継手36、ポリウレタンコイル32、結合材33、流体通路連結管34、吸着連絡孔30bを経由して環状吸着パッド17’a底面の真空孔30eを減圧し、半導体基板裏面が環状吸着パッドに吸着される。   As shown in FIGS. 1 and 2, the decompression means 31 for decompressing the vacuum hole 30e provided in the arc-shaped groove 30d of the annular suction pad includes a polyurethane coil 32, a binding material (union) 33, a fluid passage connecting pipe 34, It consists of a hose fixture 35, a vacuum pump (not shown), and a coupling 36 connected to this vacuum pump. When the vacuum pump is driven to depressurize, the depressurization depressurizes the vacuum hole 30e on the bottom surface of the annular suction pad 17′a via the joint 36, the polyurethane coil 32, the binding material 33, the fluid passage connecting pipe 34, and the suction communication hole 30b. The back surface of the semiconductor substrate is sucked by the annular suction pad.

37はパッド押さえ固定具で、環状吸着パッド17’aの上面で環状吸着パッドをボルト39で固定する。38は旋回ア−ムで前記環状吸着パッド17’aを固定するパッド押さえ固定具37を回転自在に支持する。環状吸着パッド17’aを支持するア−ム38はスクエアFシリンダ22により図2で示される左右方向に進退可能となっている。このスクエアFシリンダ22の上部をステッピングモ−タ40の下部に設けたア−ムホルダ25に固定する。   Reference numeral 37 denotes a pad pressing fixture, which fixes the annular suction pad with bolts 39 on the upper surface of the annular suction pad 17 ′ a. Reference numeral 38 denotes a swing arm which rotatably supports a pad pressing fixture 37 for fixing the annular suction pad 17'a. The arm 38 that supports the annular suction pad 17'a can be advanced and retracted in the left-right direction shown in FIG. The upper part of the square F cylinder 22 is fixed to an arm holder 25 provided at the lower part of the stepping motor 40.

前記ア−ムホルダ25中央にはア−ム軸が設けられている。ア−ム軸は小ア−ム軸28a、大ア−ム軸28b部分よりなる。小ア−ム軸28aの上部はステッピングモ−タ40のベアリングケ−ス42下部で軸受け43される。小ア−ム軸28aの上部には大ア−ム軸28bが連結され、前記下部軸受43と上部軸受45により回転可能に軸受けされている。大ア−ム軸28bの上部はステッピングモ−タ40の回転軸46に連結されている。ステッピングモ−タ40の駆動によりア−ム軸28a,28bが回動され、ア−ムホルダ25は小ア−ム軸28a回りに回動する。ア−ムホルダ25の回動によりホルダに固定されているスクエアFシリンダ22も小ア−ム軸28a回りに回動する。よって、スクエアFシリンダ22に支持されているア−ム38も小ア−ム軸28a回りに回動することとなり、このア−ム38の延長上にある固定具37に固定されている環状吸着パッド17’aは小ア−ム軸28a回りに回動する。   An arm shaft is provided in the center of the arm holder 25. The arm shaft is composed of a small arm shaft 28a and a large arm shaft 28b. The upper portion of the small arm shaft 28a is supported by a bearing 43 below the bearing case 42 of the stepping motor 40. A large arm shaft 28b is connected to the upper portion of the small arm shaft 28a, and is rotatably supported by the lower bearing 43 and the upper bearing 45. The upper part of the large arm shaft 28b is connected to the rotating shaft 46 of the stepping motor 40. By driving the stepping motor 40, the arm shafts 28a, 28b are rotated, and the arm holder 25 is rotated around the small arm shaft 28a. By rotation of the arm holder 25, the square F cylinder 22 fixed to the holder also rotates around the small arm shaft 28a. Therefore, the arm 38 supported by the square F cylinder 22 also rotates around the small arm shaft 28 a, and the annular suction fixed to the fixture 37 on the extension of the arm 38. The pad 17'a rotates around the small arm shaft 28a.

環状吸着パッド17’aのア−ム38の昇降は、ステッピングモ−タ40を固定するスライダ47をシリンダ48でア−ムを上下に移動することにより行なわれる。   The arm 38 of the annular suction pad 17'a is moved up and down by moving the arm 47 up and down with a cylinder 48 on a slider 47 that fixes the stepping motor 40.

60は洗浄液供給手段で、前記環状吸着パッド17’aの上方より当該環状吸着パッドの刳貫き部30aへ洗浄液を供給する。洗浄液は、基板と当該環状吸着パッドの刳貫き部30aとで形成された凹部空所に滞り、膜を張る。   A cleaning liquid supply means 60 supplies the cleaning liquid from above the annular suction pad 17'a to the piercing portion 30a of the annular suction pad. The cleaning liquid stays in the recess space formed by the substrate and the through-hole 30a of the annular suction pad, and stretches the film.

図7に示される裏面研削装置1は、2は基台、3は上下動および回転可能な軸、4はロボットアームで前記軸3に水平方向伸縮自在にかつ回転可能に取り付けられ、前記軸3の前側に設けられかつ該軸3の軸芯と同一の円の中心点を有する環状の位置に設けられた複数の基板(ウエハ)の縦型収納カセット5,5’より基板を搬送または搬入する。ロボットアーム4のアーム裏面は、0.5〜1mm径の孔を多数有し、チャンバーを減圧することにより基板Aを吸着する。ロボットアーム4は軸3に備えつけられており回動自在な2個の腕と、エア−シリンダにより前後に伸縮でき、かつ回動できるように設計されたアームとから構成される。   The back grinding apparatus 1 shown in FIG. 7 includes a base 2, a shaft 3 that can be moved up and down, and a shaft 4. A robot arm is attached to the shaft 3 so as to be horizontally extendable and rotatable. The substrates are transported or carried in from a plurality of substrates (wafers) vertical storage cassettes 5 and 5 'provided at the front side of the shaft 3 and provided at an annular position having the same circle center point as the axis of the shaft 3. . The arm back surface of the robot arm 4 has many holes with a diameter of 0.5 to 1 mm, and adsorbs the substrate A by depressurizing the chamber. The robot arm 4 includes two arms which are provided on the shaft 3 and are rotatable, and an arm which is designed to be able to extend and retract by an air cylinder and to be rotated.

収納カセット5,5’は、ロボットアーム4の軸芯3から60度離れて同一円周上に設置されている。収納カセット5は、研削加工される前の基板を25枚収納、収納カセット5’は研削加工された基板Aを25枚収納可能となっている。   The storage cassettes 5 and 5 ′ are installed on the same circumference at a distance of 60 degrees from the axis 3 of the robot arm 4. The storage cassette 5 can store 25 substrates before being ground, and the storage cassette 5 'can store 25 substrates A that have been ground.

6は載置される基板の裏面を水で洗浄可能な基板の仮置台、7は上下動可能な軸、8は軸7に軸承された吸着チャック機構、9はチャック機構8の周囲に設けられた水を供給できる吸着テ−ブル、10は洗浄スピナー、11は回動可能な回転軸、12,12,12は中空スピンドル(図示されていない)に軸承された水平方向に回転可能な吸着チャック(円盤状ポ−ラスセラミック製チャック)、13は回転軸11に軸承されたインデックステーブルで、ロ−ディング/アンロ−ディングゾ−ンs、粗研削ゾ−ンs、および仕上研削ゾ−ンsに区分けする。14はレール、15は前記インデックステーブル13の上面に離間して設けられたチャック洗浄洗浄機器で、円盤状ポ−ラスセラミック製チャック12を洗浄する。 6 is a temporary placement table for a substrate on which the back surface of the substrate to be placed can be washed with water, 7 is a vertically movable shaft, 8 is a suction chuck mechanism supported by the shaft 7, and 9 is provided around the chuck mechanism 8. An adsorption table capable of supplying water, 10 is a cleaning spinner, 11 is a rotatable rotary shaft, 12, 12 and 12 are horizontal chucks rotatably supported by a hollow spindle (not shown). (Disk-shaped porous ceramic chuck) 13 is an index table supported by the rotary shaft 11, and includes a loading / unloading zone s 1 , a rough grinding zone s 2 , and a finish grinding zone. It is divided into s 3. Reference numeral 14 denotes a rail, and 15 denotes a chuck cleaning and cleaning device which is provided on the upper surface of the index table 13 so as to clean the disc-shaped porous ceramic chuck 12.

この洗浄機器15は、ブラシ洗浄器15aとセラミック製竿を備えたチャック洗浄器具15bを対として構成されており、レール14上を横方向に移動可能に取り付けられている。60は純水供給ノズルである。純水供給ノズル60より環状吸着パッド17‘aの上下に通じる刳貫き部30aに純水が供給される。   The cleaning device 15 includes a pair of a brush cleaning device 15a and a chuck cleaning device 15b having a ceramic bowl, and is attached to the rail 14 so as to be movable in the lateral direction. Reference numeral 60 denotes a pure water supply nozzle. Pure water is supplied from the pure water supply nozzle 60 to the piercing portion 30a that communicates with the upper and lower sides of the annular suction pad 17'a.

16は上下動、回動可能な軸に軸承された研削機器で、回転軸16aに軸承された荒研削機器16bと、回転軸16cに軸承された仕上研削機器16dとから構成される。これら研削機器16b,16dはフレーム21に据え付けられる。   Reference numeral 16 denotes a grinding device supported on a shaft that can move up and down, and includes a rough grinding device 16b supported on a rotating shaft 16a and a finish grinding device 16d supported on a rotating shaft 16c. These grinding machines 16 b and 16 d are installed on the frame 21.

吸着パッドを備える基板移送機器17は、吸着パッド17aを備える軸17bを中心に回動可能な基板移送機構である。左側の基板移送機構17は仮置台6上の基板をロ−ディング/アンロ−ディングゾ−ンs位置に在る円盤状ポ−ラスセラミック製チャック12上に移送するのに用いられる。この左側の基板移送機構17の機能を前記ロボットアーム4で行わせてもよい。右側の基板搬送機器17‘は、ロ−ディング/アンロ−ディングゾ−ンs位置に在る円盤状ポ−ラスセラミック製チャック12上の半導体基板を洗浄スピナー10の吸着テ−ブル9上に移送するのに用いられる。洗浄スピナー10の上方には超音波振動が印加された洗浄液を供給するノズル61が設けられている。超音波振動発信器は、0.5〜2MHzの第一超音波発信素子と20〜200kHzの第二超音波発信素子とからなり、周波数幅を変えることができる。超音波の周波数は、除去されるパ−ティクルに依存するので、50kHzを30秒、100kHzを30秒、1MHzを30秒の周期で繰り返し洗浄液に照射するのがよい。 The substrate transfer device 17 provided with a suction pad is a substrate transfer mechanism that can rotate around a shaft 17b provided with a suction pad 17a. Left substrate transfer mechanism 17 b of the substrate on the provisional table 6 - loading / unload - Dinguzo - disc-shaped port lies down s 1 position - is used to transport on Las ceramic chuck 12. The robot arm 4 may perform the function of the left substrate transfer mechanism 17. Right board conveying device 17 ', Russia - loading / unload - Dinguzo - disc-shaped port lies down s 1 position - Las ceramic chuck 12 on the semiconductor substrate adsorption Te washing spinner 10 - transferred onto table 9 Used to do. Above the cleaning spinner 10 is provided a nozzle 61 for supplying a cleaning liquid to which ultrasonic vibration is applied. The ultrasonic vibration transmitter includes a first ultrasonic transmission element of 0.5 to 2 MHz and a second ultrasonic transmission element of 20 to 200 kHz, and the frequency width can be changed. Since the frequency of the ultrasonic wave depends on the particle to be removed, it is preferable to irradiate the cleaning liquid repeatedly at a cycle of 50 kHz for 30 seconds, 100 kHz for 30 seconds, and 1 MHz for 30 seconds.

18は観音開きの安全扉であり、前面に把手18a,18aが設けられ、基台2の前面部の半円台上面のレール2a上を軸18bを中心に左右に円弧状に開閉できるものである。19は制御モニター、20はハウジングである。   18 is a double door safety door, which is provided with handles 18a, 18a on the front surface, and can be opened and closed in a circular arc shape around the axis 18b on the rail 2a on the upper surface of the semicircular base on the front surface of the base 2. . Reference numeral 19 is a control monitor, and 20 is a housing.

このインデックステ−ブル型基板裏面研削装置1は、ロボットアーム4の軸芯と、仮置台6の軸芯と洗浄スピナ−10のチャック機構8の軸芯を同一直線上に設け、この直線と、チャック洗浄用のブラシ洗浄器15aとセラミック製竿洗浄器具15bの横方向の移動軌跡直線と、荒研削機器16bの回転軸16aの軸芯と仕上研削機器16dの回転軸16cの軸芯を結ぶ直線とは、互いに平行な位置にあるように設けたことによりコンパクト設計されている。70は基板洗浄用のブラシである。   This index table type substrate back surface grinding apparatus 1 is provided with the axis of the robot arm 4, the axis of the temporary table 6, and the axis of the chuck mechanism 8 of the cleaning spinner 10 on the same straight line. A straight line connecting the horizontal movement trajectory of the brush cleaner 15a for chuck cleaning and the ceramic scissor cleaning device 15b, and the axis of the rotating shaft 16a of the rough grinding device 16b and the axis of the rotating shaft 16c of the finish grinding device 16d. Is compactly designed by being provided so as to be parallel to each other. Reference numeral 70 denotes a substrate cleaning brush.

次に図7示されるインデックステ−ブル型基板裏面研削装置1を用いて基板を研削する方法および基板を洗浄する方法を述べる。基板Aを研削するには、ロボットアーム4の回転軸3を上下移動して収納カセット5内の基板の高さに調整し、ついでエアーシリンダーを作動してロボットアーム4を伸ばし、吸引孔の存在する方を上面として吸引するカセットの下にロボットアームを差し込み、吸引して基板をロボットアームに吸着させる。ついで、エアーシリンダーを作動してロボットアーム4を縮ませながら後退させ、ロボットアームを回動させて、ロボットアームの下側に吸引した基板を位置させる。一方、インデックステーブル13上のロ−ディング/アンロ−ディングゾ−ンsに在る円盤状ポーラスセラミック製チャック12は水平方向に回転され、この円盤状ポーラスセラミック製チャック12上面に純水が純水供給ノズル60より供給され、洗浄機器15bのセラミック製竿32でチャック洗浄される。 Next, a method for grinding a substrate and a method for cleaning the substrate using the index table type substrate back surface grinding apparatus 1 shown in FIG. 7 will be described. In order to grind the substrate A, the rotary shaft 3 of the robot arm 4 is moved up and down to adjust the height of the substrate in the storage cassette 5, and then the air cylinder is operated to extend the robot arm 4 so that a suction hole exists. The robot arm is inserted under the cassette to be suctioned with the surface to be suctioned as the upper surface, and the substrate is attracted to the robot arm by suction. Next, the air cylinder is operated to retract the robot arm 4 while contracting, and the robot arm is rotated to position the sucked substrate under the robot arm. On the other hand, the disc-shaped porous ceramic chuck 12 in the loading / unloading zone s 1 on the index table 13 is rotated in the horizontal direction, and pure water is added to the upper surface of the disc-shaped porous ceramic chuck 12 with pure water. Supplied from the supply nozzle 60 and chuck-cleaned by the ceramic bowl 32 of the cleaning device 15b.

ロボットアーム4の回転軸3を回動し、ロボットアーム4を伸ばし、吸着した基板を仮置台6上に移送してきたら減圧を止め、基板を仮置台6上のポーラスセラミックス板上に載置する。チャンバー内に洗浄水を導き、ポーラスセラミックス板から洗浄水を滲ませて基板の裏面を洗浄する。洗浄した基板の上側より、ロボットアーム4を伸ばし、軸3を下降させて基板をロボットアームに吸着させる。   The rotation axis 3 of the robot arm 4 is rotated, the robot arm 4 is extended, and when the adsorbed substrate is transferred onto the temporary table 6, the decompression is stopped and the substrate is placed on the porous ceramic plate on the temporary table 6. The cleaning water is introduced into the chamber, and the cleaning water is blotted from the porous ceramic plate to clean the back surface of the substrate. The robot arm 4 is extended from the upper side of the cleaned substrate, and the shaft 3 is lowered to attract the substrate to the robot arm.

ロボットアーム4を縮め、後退させ、軸3を回動し、再びロボットアームを前進、伸ばし、インデックステーブル13上の前記セラミック製竿で洗浄されたポーラスセラミック製チャック12上に基板をロボットアームの減圧を止めることにより載せ、ポーラスセラミック製チャック12下面の中空スピンドルを減圧して基板をチャック12上に固定する。一方、ロボットアーム4を後退させながらアームを折り畳む。   The robot arm 4 is contracted and retracted, the shaft 3 is rotated, the robot arm is advanced and extended again, and the substrate is depressurized on the porous ceramic chuck 12 washed with the ceramic iron on the index table 13. The substrate is mounted on the chuck 12 by reducing the pressure of the hollow spindle on the lower surface of the porous ceramic chuck 12. On the other hand, the arm is folded while the robot arm 4 is retracted.

インデックステーブル13の回転軸11を回動させてインデックテーブル13を右方向に120度回動させ、基板を載せ、吸着したポーラスセラミック製チャック12を粗研削ゾ−ンsに位置する荒研削機器16bの下に位置させる。この荒研削機器16bの回転軸16aを下降させ、備えつけられた砥石を基板に押し当て、ポーラスセラミック製チャック(研削テーブル)12の回転と荒研削機器16b砥石の回転を回転させ、砥石を基板面で摺擦させて粗研削する。 Rough grinding equipment located down s 2 - to rotate the rotary shaft 11 of the index table 13 by 120 degrees rotation in-deck table 13 in the right direction, placing the substrate, the porous ceramic chuck 12 which has adsorbed the rough grinding zone 16b. The rotating shaft 16a of the rough grinding machine 16b is lowered, the provided grindstone is pressed against the substrate, the rotation of the porous ceramic chuck (grinding table) 12 and the rotation of the rough grinding equipment 16b are rotated, and the grindstone is placed on the substrate surface. Rub and rough grind.

この粗研削時の砥石軸16aの回転数は、10〜200rpm、両軸の回転方向は正逆いずれの方向でもよいが逆方向の回転の方が好ましい。ポーラスセラミック製チャック12、荒研削機器16bの回転軸16aの回転が止められてこの粗研削(一次研削)が終了すると、荒研削機器16bが上昇され、ついでインデックステーブル13を120度右方向に回動させ、粗研削された基板を載せたポーラスセラミック製チャック12を精研削ゾ−ンsに位置する仕上研削機器16dの下に移動させる。 The rotational speed of the grindstone shaft 16a during the rough grinding may be 10 to 200 rpm, and the rotational direction of both shafts may be either forward or reverse, but the reverse direction is preferred. When the rotation of the porous ceramic chuck 12 and the rotary shaft 16a of the rough grinding device 16b is stopped and this rough grinding (primary grinding) is finished, the rough grinding device 16b is raised, and then the index table 13 is rotated 120 degrees to the right. is moving, the porous ceramic chuck 12 carrying the crude grinded substrate fine grinding zone - move beneath the finish located down s 3 grinding device 16d.

仕上研削機器16dを下降させ、仕上研削砥石を基板に押し当て、ポーラスセラミック製チャック12を軸承する中空スピンドルおよび仕上研削機器16d砥石を軸承する回転軸16cを回転させることにより基板の仕上研削(二次研削)を行なう。回転数は10〜200rpm、両軸の回転方向は正逆いずれの方向でもよいが、逆方向が好ましい。   The finish grinding device 16d is lowered, the finish grinding wheel is pressed against the substrate, and the hollow spindle that supports the porous ceramic chuck 12 and the rotary shaft 16c that supports the finish grinding device 16d are rotated to finish the substrate (2). Next grinding). The rotational speed is 10 to 200 rpm, and the rotational direction of both axes may be either forward or reverse, but the reverse direction is preferred.

ポーラスセラミック製チャック12を軸承する中空スピンドルおよび仕上研削機器16d砥石を軸承する回転軸16cの回転を止めることにより仕上研削を終了させ、仕上研削機器16dを上昇させ、インデックステーブル13を右方向に120度、または逆方向に240度回動させて、研削加工された基板を最初のインデックステーブル13上のロ−ディング/アンロ−ディングゾ−ンs位置に戻す。 Finishing grinding is terminated by stopping the rotation of the hollow spindle for bearing the porous ceramic chuck 12 and the rotary shaft 16c for bearing the grinding wheel 16d for the finishing grinding machine, the finishing grinding machine 16d is raised, and the index table 13 is moved 120 to the right. Then, the ground substrate is returned to the loading / unloading zone s 1 position on the first index table 13.

インデックステーブル13上のロ−ディング/アンロ−ディングゾ−ンs位置に在るチャック12を回転させつつこのチャック上にある裏面研削基板上面に純水供給ノズル60より純水を供給し、基板上(裏)面を洗浄する。 Loading / unloading zone s on the index table 13 The pure water is supplied from the pure water supply nozzle 60 to the upper surface of the back-grinding substrate on the chuck while rotating the chuck 12 located at the position 1 on the substrate. Clean the (back) side.

チャック12の回転を止め、チャック12の減圧を止めた後、搬送機器30の環状搬送パッド17‘aをチャック12上へ移動させ、ついで環状搬送パッド17‘aを下降させて裏面研削基板上面に当接させたら減圧して環状搬送パッド17‘a下面への裏面研削基板の固定を確固たるものとし、ついで、チャック12下面より圧空の入った加圧水を瞬時吹き上げて基板のチャックからの離れるのを容易とするとともに、環状搬送パッド17‘aをア−ム軸回りに回動させ、裏面研削基板を洗浄スピナ−10の吸着チャック機構8上に受け渡たし(アンロ−ディング)、環状搬送パッド17’aの減圧を止めることにより研削加工・洗浄された半導体基板を吸着チャック機構8のポーラスセラミックス板9上に載せ、チャック機構8を減圧して基板をしっかりと吸着した後、軸7を下降させてチャック機構8のポーラスセラミックス板の位置と、このポーラスセラミックス板の周囲に配された吸着テ−ブル(ポーラスセラミックス製)9の高さの位置を略同等の高さとする。   After the rotation of the chuck 12 is stopped and the pressure reduction of the chuck 12 is stopped, the annular conveyance pad 17′a of the conveyance device 30 is moved onto the chuck 12, and then the annular conveyance pad 17′a is lowered to the upper surface of the back grinding substrate. When the contact is made, the pressure is reduced to firmly fix the back grinding substrate to the lower surface of the annular transfer pad 17'a, and then the pressurized water containing pressurized air is instantaneously blown from the lower surface of the chuck 12 to easily separate the substrate from the chuck. At the same time, the annular conveyance pad 17'a is rotated around the arm axis, and the back ground substrate is transferred onto the suction chuck mechanism 8 of the cleaning spinner 10 (unloading). The semiconductor substrate that has been ground and cleaned by stopping the decompression of 'a is placed on the porous ceramic plate 9 of the suction chuck mechanism 8, and the chuck mechanism 8 is decompressed. After firmly adsorbing the substrate, the shaft 7 is lowered to position the porous ceramic plate of the chuck mechanism 8 and the height position of the adsorption table (made of porous ceramics) 9 arranged around the porous ceramic plate. Are approximately the same height.

ついで、環状搬送パッド17‘aを回動させて待機位置に戻すとともに、洗浄スピナー10を回転させながら吸着テ−ブル9下面より純水を滲ませて研削加工基板を水に浸漬して裏面研削基板保護フィルム側を洗浄し、裏面研削基板上方側より超音波振動が印加された純水をノズル61より供給し、基板裏面のパ−ティクルの除去洗浄を行う。この水洗後、軸7を上昇させてチャック機構8上の研削加工基板を水面より高い位置にもっていき、ロボットアーム4を回動、前進、伸ばして洗浄された研削加工基板上面をアームで吸着し、チャック機構8の減圧を止め、ついで中空軸7より乾燥空気を吹きつけて基板の裏面を乾燥する。   Next, the annular transport pad 17′a is rotated to return to the standby position, and while the cleaning spinner 10 is rotated, pure water is blotted from the lower surface of the suction table 9, and the ground substrate is immersed in water to perform back surface grinding. The substrate protective film side is washed, and pure water to which ultrasonic vibration is applied is supplied from the upper side of the back grinding substrate from the nozzle 61, and the particles on the back side of the substrate are removed and washed. After this water washing, the shaft 7 is raised to bring the grinding substrate on the chuck mechanism 8 to a position higher than the water surface, and the robot arm 4 is rotated, moved forward, stretched, and the washed grinding substrate upper surface is adsorbed by the arm. Then, the depressurization of the chuck mechanism 8 is stopped, and then the back surface of the substrate is dried by blowing dry air from the hollow shaft 7.

乾燥した研削加工基板を吸着しているロボットアーム4は、後退、ア−ムを反転させてブラシ70に研削加工基板の保護テ−プ面をワイプして湿気を拭き取り、ついで、アームを折り畳み、回動し、再びアームを前進、伸ばして研削加工基板を収納カセット5’内に収納し、後退、アームを折り畳み、回動し、更にアームを反転して次の新しい基板のロ−ディング/アンロ−ディングゾ−ンs位置に在るチャック12上への移送を準備する。 The robot arm 4 adsorbing the dried ground substrate is retracted, the arm is reversed, the brush 70 is wiped with the protective tape surface of the ground substrate to wipe off moisture, and then the arm is folded. Rotate, advance and extend the arm again to store the ground substrate in the storage cassette 5 ', retract, fold the arm, rotate, and reverse the arm to load / unload the next new substrate -Ding zone s Prepare for transfer onto chuck 12 in position 1 .

この洗浄スピナ−10上で研削加工基板が洗浄、乾燥処理されている間に、洗浄機器15をレール14上に左側に走行させて水平方向に回転する円盤状ポ−ラスセラミック製チャック12上に移動させ、ついで、このインデックステーブル13上のロ−ディング/アンロ−ディングゾ−ンs位置に在るチャック12上にブラシ洗浄器15aのブラシを回転させつつブラシ洗浄器15aを下降させてブラシをロ−ディング/アンロ−ディングゾ−ンs位置に在るポーラスセラミック製チャック12上に当接させ、チャックを洗浄する。この際、純水供給ノズル60からも純水がチャック表面に供給される。チャックの洗浄が終了すると、洗浄機器15をレール14上にさらに左側に走行させて待機位置へと戻す。 While the ground substrate is being cleaned and dried on the cleaning spinner 10, the cleaning device 15 runs on the rail 14 to the left and rotates horizontally on the disc-shaped porous ceramic chuck 12. the moved, then the b on the index table 13 - the emission s 1 chuck 12 is lowered brush cleaner 15a while rotating the brush of the brush washer 15a on with a brush located in a position - loading / unload - Dinguzo Loading / Unloading Zone s Abuts on the porous ceramic chuck 12 at position 1 to clean the chuck. At this time, pure water is also supplied from the pure water supply nozzle 60 to the chuck surface. When the chuck cleaning is completed, the cleaning device 15 is further moved to the left on the rail 14 and returned to the standby position.

他の作業ゾ−ン、すなわち、粗研削ゾ−ンsで基板の粗研削加工がおよび精研削ゾ−ンsで基板の仕上げ研削加工がなされている間、ロ−ディング/アンロ−ディングゾ−ンs位置に在り、ブラシ洗浄が終了した円盤状ポ−ラスセラミック製チャック12上には、収納カセット5より新たな基板が搬出され、仮置台を経由して吸着パッドにより載置(ロ−ディング)される。 The loading / unloading zone is performed while the substrate is coarsely ground in the other work zone, ie, the coarse grinding zone s 2 and the substrate is ground in the fine grinding zone s 3. -A new substrate is unloaded from the storage cassette 5 on the disc-shaped porous ceramic chuck 12 at the position 1 where brush cleaning has been completed, and is placed on the chuck pad via the temporary placement table (Ro -Ding)

ロ−ディング/アンロ−ディングゾ−ンsで新しい基板のロ−ディング、粗研削ゾ−ンsで基板の粗研削加工、および精研削ゾ−ンsで基板の仕上研削が終了するとインデックステ−ブル13は再び、120度時計回り方向、120度時計回り方向、および120度時計回り方向または240度逆回り方向の移動を繰り返し、新しい基板の粗研削加工、仕上研削加工、研削加工基板の洗浄、基板のアンロ−ディング、チャック洗浄、および基板のロ−ディングを各作業ゾ−ン(s1、s2およびs3)の円盤状ポ−ラスセラミック製チャック12で行う。なお、チャック12の磨耗を防ぐためにチャックの洗浄は、記述したようにブラシ洗浄とセラミック製竿洗浄を交互に行うのがよい。 When the loading / unloading zone s 1 loads a new substrate, the rough grinding zone s 2 finishes the rough grinding of the substrate, and the fine grinding zone s 3 finishes the finish grinding of the substrate. The table 13 repeats the movement in the 120 ° clockwise direction, 120 ° clockwise direction, and 120 ° clockwise direction or 240 ° counterclockwise direction again, and the new substrate is subjected to rough grinding, finish grinding, and ground substrate. Cleaning, substrate unloading, chuck cleaning, and substrate loading are performed by the disk-shaped porous ceramic chuck 12 in each work zone (s 1 , s 2 and s 3 ). In order to prevent the chuck 12 from being worn, the cleaning of the chuck is preferably performed alternately with brush cleaning and ceramic soot cleaning as described.

本発明の研削ステ−ジのチャック上から洗浄ステ−ジのチャックへの裏面研削加工基板の受け渡し方法は、基板の研削面がウエット状態で行われるので、環状パッドで搬送時、パ−ティクルの基板研削面への乾燥固着が防止され、乾式状態での従来の受け渡し方法と比較してスピン洗浄ステ−ジで95%以上のパ−ティクル除去率向上がある。   In the method of delivering a back-grinded substrate from the grinding stage chuck to the cleaning stage chuck according to the present invention, the ground surface of the substrate is in a wet state. Dry adhesion to the ground surface of the substrate is prevented, and the particle removal rate is improved by 95% or more in the spin cleaning stage as compared with the conventional delivery method in the dry state.

本発明の基板搬送機器の斜視図である。It is a perspective view of the board | substrate conveyance apparatus of this invention. 本発明の基板用搬送機器の正面図である。It is a front view of the conveyance apparatus for substrates of this invention. 基板用搬送機器の環状吸着パッドの底面図である。It is a bottom view of the cyclic | annular suction pad of the conveyance apparatus for substrates. 環状吸着パッドの上面図である。It is a top view of an annular suction pad. 環状吸着パッドの断面図で、図4におけるA−A切断面を示す。It is sectional drawing of a cyclic | annular suction pad, and shows the AA cut surface in FIG. 基板搬送機器の側面図である。It is a side view of a board | substrate conveyance apparatus. 裏面研削装置の平面図である。It is a top view of a back grinding apparatus. 裏面研削装置の平面図である。(公知)It is a top view of a back grinding apparatus. (Known)

符号の説明Explanation of symbols

1 インデックステ−ブル型基板裏面研削装置
A 半導体基板
10 洗浄スピナ−
12 ポ−ラスセラミック製チャック
13 インデックステ−ブル
17‘a 環状吸着パッド
22 スクエアFシリンダ
25 ア−ムホルダ−
30 基板搬送機器
30a 刳貫き部
30b 吸着孔
30c 底部外周部
30d 円弧状溝
30e 真空孔
30f 底部中央部
31 減圧手段
32 ポリウレタンコイル
33 結合材
34 流体通路連結管
38 旋回ア−ム
40 ステッピングモ−タ
60 純水供給ノズル
61 洗浄液供給ノズル
1 Index Table Type Substrate Back Grinding Device A Semiconductor Substrate 10 Cleaning Spinner
12 Porous ceramic chuck 13 Index table 17'a Annular suction pad 22 Square F cylinder 25 Arm holder
DESCRIPTION OF SYMBOLS 30 Substrate conveyance apparatus 30a Penetration part 30b Adsorption hole 30c Bottom outer peripheral part 30d Arc-shaped groove 30e Vacuum hole 30f Bottom center part 31 Pressure reducing means 32 Polyurethane coil 33 Binding material 34 Fluid passage connecting pipe 38 Swing arm 40 Stepping motor 60 Pure water supply nozzle 61 Cleaning liquid supply nozzle

Claims (2)

プリント配線が施された基板表面を保護テ−プで被覆し、この保護テ−プ面をポ−ラスセラミック製チャックに対向させて載置された半導体基板の裏面を砥石で研削し、研削終了後、この裏面研削された基板面に洗浄液を供給しながら搬送機器の上下部開放型の環状吸着パッドを当該研削基板裏面に当接させて基板を吸着させ、基板上面と前記環状吸着パッド下面とで形成される凹部空所に洗浄液膜が存在する状態で基板を洗浄ステ−ジであるスピナ−へと受け渡すことを特徴とする、半導体基板の受け渡し方法。   The surface of the printed circuit board is covered with a protective tape, and the back surface of the semiconductor substrate placed with the surface of the protective tape facing the porous ceramic chuck is ground with a grinding stone. Then, while supplying the cleaning liquid to the back-ground substrate surface, the upper and lower open-type annular suction pads of the transport device are brought into contact with the rear surface of the ground substrate to suck the substrate, and the upper surface of the substrate, the lower surface of the annular suction pad, A method of transferring a semiconductor substrate, wherein the substrate is transferred to a spinner as a cleaning stage in a state where a cleaning liquid film is present in a recess space formed in step (b). 上下に通じる刳貫き部を有し、環状底面に複数個の真空孔が穿たれた環状吸着パッド、
当該環状吸着パッドの環状上面に設けられ、環状吸着パッドの前記真空孔に通じる減圧手段、
当該環状吸着パッドの上面で環状吸着パッドを固定するパッド押さえ固定具、
当該パッド押さえ固定具を回転自在に支持する旋回ア−ム、
当該旋回ア−ムを昇降および旋回または直線進退可能に移動させる移動機構、
および、
前記環状吸着パッドの上方より当該環状吸着パッドの刳貫き部へ洗浄液を供給する洗浄液供給手段
を設けたことを特徴とする基板搬送機器。
An annular suction pad having a piercing portion that communicates vertically and having a plurality of vacuum holes in the annular bottom surface,
A pressure reducing means provided on the annular upper surface of the annular suction pad and leading to the vacuum hole of the annular suction pad;
A pad holding fixture for fixing the annular suction pad on the upper surface of the annular suction pad;
A swivel arm that rotatably supports the pad pressing fixture;
A moving mechanism for moving the swivel arm so that the swivel arm can be moved up and down and swiveled or moved back and forth linearly;
and,
A substrate transport apparatus, comprising cleaning liquid supply means for supplying a cleaning liquid from above the annular suction pad to a penetration portion of the annular suction pad.
JP2005070370A 2005-03-14 2005-03-14 Semiconductor substrate delivery method and transfer device used therefor Expired - Fee Related JP4705387B2 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014172135A (en) * 2013-03-12 2014-09-22 Disco Abrasive Syst Ltd Grinding method
JP2015115574A (en) * 2013-12-16 2015-06-22 株式会社東京精密 Wafer conveyance system

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002200586A (en) * 2000-10-31 2002-07-16 Ebara Corp Holding device, treating device, and holding method for substrate
JP2003282666A (en) * 2002-03-25 2003-10-03 Dainippon Screen Mfg Co Ltd Substrate transporting device and substrate processing device
JP2003303874A (en) * 2002-04-12 2003-10-24 Disco Abrasive Syst Ltd Carrying apparatus for semiconductor wafer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002200586A (en) * 2000-10-31 2002-07-16 Ebara Corp Holding device, treating device, and holding method for substrate
JP2003282666A (en) * 2002-03-25 2003-10-03 Dainippon Screen Mfg Co Ltd Substrate transporting device and substrate processing device
JP2003303874A (en) * 2002-04-12 2003-10-24 Disco Abrasive Syst Ltd Carrying apparatus for semiconductor wafer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014172135A (en) * 2013-03-12 2014-09-22 Disco Abrasive Syst Ltd Grinding method
JP2015115574A (en) * 2013-12-16 2015-06-22 株式会社東京精密 Wafer conveyance system

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