JP2006253494A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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JP2006253494A
JP2006253494A JP2005069651A JP2005069651A JP2006253494A JP 2006253494 A JP2006253494 A JP 2006253494A JP 2005069651 A JP2005069651 A JP 2005069651A JP 2005069651 A JP2005069651 A JP 2005069651A JP 2006253494 A JP2006253494 A JP 2006253494A
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semiconductor device
heat
circuit
main body
shape
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Tomoyoshi Sugihara
友義 杉原
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Kyocera Document Solutions Inc
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Kyocera Mita Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of being mounted rationally on an instrument without spoiling heat dissipating function. <P>SOLUTION: The semiconductor device with a heat dissipating body 3 abutted against one surface of a device main body 2 is constituted of a plurality of circuits, a plurality of circuits classified into a circuit 4 having a large generating amount of heat and another circuit 5 having a small generating amount of heat while being arranged concentrically in every classifications, and the heat dissipating body 3 abutted against a local part on one surface of the device main body 2 opposed to the site of concentrated arrangement of the circuit 4 having a large amount of generated heat. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、半導体装置に関し、特に、放熱機能を損なわずに機器に合理的に搭載できる半導体装置に関する。   The present invention relates to a semiconductor device, and more particularly, to a semiconductor device that can be reasonably mounted on equipment without impairing a heat dissipation function.

CPU(中央演算処理装置)等の半導体装置は、多数の半導体回路が配設されているため、多量の電力消費による発熱を避けることができない。CPUは高温になると、不安定となって誤動作を引き起こしたり、或いは故障したりする。   Since a semiconductor device such as a CPU (Central Processing Unit) is provided with a large number of semiconductor circuits, heat generation due to a large amount of power consumption cannot be avoided. When the CPU becomes high temperature, it becomes unstable, causing malfunction or failure.

そこで、従来より、CPU等の半導体装置に搭載され、当該半導体装置が発する熱を空気中に放熱する発熱体冷却装置が提案されている(特許文献1参照)。
特開2003−282803号公報
Therefore, conventionally, a heating element cooling device that is mounted on a semiconductor device such as a CPU and radiates heat generated by the semiconductor device into the air has been proposed (see Patent Document 1).
JP 2003-282803 A

しかしながら、上述した発熱体冷却装置を搭載した半導体装置20は、図3に示すように、直方体形状の発熱体冷却装置21を直方体形状の半導体装置本体22の上面全体に当接して構成するため、半導体装置20全体の形状は直方体形状となる。   However, as shown in FIG. 3, the semiconductor device 20 equipped with the above-described heating element cooling device is configured so that the rectangular parallelepiped heating element cooling device 21 is in contact with the entire upper surface of the rectangular parallelepiped semiconductor device body 22. The overall shape of the semiconductor device 20 is a rectangular parallelepiped shape.

このため、機器内の特殊形状の搭載領域(直方体形状でない搭載領域、以下、特殊搭載領域という)、例えば、傾斜形状の搭載領域等に、この半導体装置20を搭載しようとすれば、特殊搭載領域の形状と半導体装置の形状の不整合により、この特殊搭載領域を有効に利用できなくなる。   For this reason, if the semiconductor device 20 is to be mounted in a special-shaped mounting area (a mounting area that is not a rectangular parallelepiped shape, hereinafter referred to as a special mounting area), for example, an inclined-shaped mounting area in the device, the special mounting area. This special mounting area cannot be used effectively due to mismatch between the shape of the semiconductor device and the shape of the semiconductor device.

すなわち、この半導体装置20の搭載による特殊搭載領域の利用に無駄が生ずるため、特殊搭載領域にこの半導体装置20を搭載すると共に、さらにその他の装置を搭載する場合に、その他の装置を必要以上に小規模、少数にして搭載しなくてはならない。   That is, since the use of the special mounting area due to the mounting of the semiconductor device 20 is wasted, when the semiconductor device 20 is mounted in the special mounting area and other devices are mounted, the other devices are more than necessary. It must be installed in small and small numbers.

そこで、本発明は、上記問題に鑑み、放熱機能を損なわずに機器に合理的に搭載できる半導体装置を提供することを目的とする。   In view of the above problems, an object of the present invention is to provide a semiconductor device that can be reasonably mounted on a device without impairing the heat dissipation function.

本発明は、複数の回路で構成される装置本体の一面に放熱体を当接する半導体装置を前提としている。   The present invention is premised on a semiconductor device in which a heat radiating member is brought into contact with one surface of a device main body constituted by a plurality of circuits.

本発明は、発熱量の大きい回路と発熱量の小さい回路とに種別して種別毎に集中配置される前記複数の回路と、前記発熱量の大きい回路の集中配置部位に対応する前記装置本体の一面の局部に当接する前記放熱体とを備えた構成としている。   The present invention relates to a plurality of circuits that are classified into a circuit having a large calorific value and a circuit having a small calorific value and are arranged in a concentrated manner for each type, and the apparatus main body corresponding to a concentrated arrangement part of the circuit having a large calorific value. It is set as the structure provided with the said thermal radiation body contact | abutted to the local part of one surface.

このようにすれば、半導体装置本体の一面の必要な局部に放熱体を当接して半導体装置を構成することで、半導体装置全体の形状を機器内の特殊搭載領域、例えば、傾斜形状の搭載領域等に整合する形状とすることができるため、放熱機能を損なわずに機器に合理的に搭載できる。   In this way, by configuring the semiconductor device by contacting the heat-dissipating body to the required local area on one surface of the semiconductor device body, the shape of the entire semiconductor device can be changed to a special mounting area in the device, for example, an inclined mounting area. Therefore, it can be rationally mounted on equipment without impairing the heat dissipation function.

また、前記発熱量の大きい回路は、前記装置本体の端部側に集中配置される構成としてもよい。このようにすれば、半導体装置全体の形状を傾斜角の緩い傾斜形状の搭載領域に整合する形状とすることができる。なお、前記放熱体は、ヒートシンクである構成としてもよい。   Further, the circuit having a large heat generation amount may be configured to be concentrated on the end side of the apparatus main body. In this way, the shape of the entire semiconductor device can be made to match the mounting area having an inclined shape with a gentle inclination angle. The heat radiator may be a heat sink.

半導体装置本体の一面の必要な局部に放熱体を当接して半導体装置を構成することで、半導体装置全体の形状を機器内の特殊搭載領域、例えば、傾斜形状の搭載領域等に整合する形状とすることができるため、放熱機能を損なわずに機器に合理的に搭載できる。   A semiconductor device is configured by contacting a necessary heat sink on one surface of the semiconductor device main body, so that the shape of the entire semiconductor device matches a special mounting area in the device, for example, an inclined mounting area. Therefore, it can be rationally mounted on the device without impairing the heat dissipation function.

以下、本発明の実施の形態を図面にしたがって詳細に説明する。図1は、本発明の実施の形態における半導体装置1を示す概略斜視図である。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a schematic perspective view showing a semiconductor device 1 according to an embodiment of the present invention.

上記半導体装置1は、複数の回路が配設された半導体装置本体2と、その露出面に複数条の凹凸を形成したアルミ等の金属製のヒートシンク3とで構成される。   The semiconductor device 1 includes a semiconductor device body 2 in which a plurality of circuits are disposed, and a heat sink 3 made of metal such as aluminum having a plurality of protrusions and recesses formed on the exposed surface.

上記ヒートシンク3は、アルミ自体の良好な熱伝導性に加えて、その凹凸構造により、大気との接触面積が増大されることで、上記半導体装置本体2が発する熱を効率的に空気中に放熱する。   The heat sink 3 efficiently dissipates heat generated by the semiconductor device body 2 into the air by increasing the contact area with the atmosphere due to the uneven structure in addition to the good thermal conductivity of the aluminum itself. To do.

ところで、上記半導体装置本体2は、その全体を直方体形状に形成しており、上記複数の回路を発熱量の大きい回路と発熱量の小さい回路とに種別して、種別毎に集中配置している。発熱量の大きい回路としては、例えば電流を多く流すバッファ回路や、高速のクロックで動作する高速回路、または動作する時間が多い回路等である。   By the way, the semiconductor device main body 2 is formed in a rectangular parallelepiped shape as a whole, and the plurality of circuits are classified into a circuit with a large amount of heat generation and a circuit with a small amount of heat generation, and are concentratedly arranged for each type. . Examples of the circuit that generates a large amount of heat include a buffer circuit through which a large amount of current flows, a high-speed circuit that operates with a high-speed clock, or a circuit that operates for a long time.

すなわち、上記半導体装置本体2は、上記発熱量の大きい回路を当該半導体装置本体2の一方の端部側に集中配置した発熱量の大きい部位4と、上記発熱量の小さい回路を当該半導体装置本体2の他方の端部側に集中配置した発熱量の小さい部位5とに区別して構成される。   That is, the semiconductor device main body 2 includes a portion 4 having a large heat generation amount in which circuits having a large heat generation amount are concentratedly arranged on one end side of the semiconductor device main body 2 and a circuit having a small heat generation amount. 2 is distinguished from the portion 5 having a small calorific value that is concentrated on the other end side.

また、上記ヒートシンク3は、その全体を直方体形状に形成しており、上記発熱量の大きい部位4に対応する半導体装置本体2の上面に、熱伝導性の粘着剤にて粘着固定され、当接している。   The heat sink 3 is formed in a rectangular parallelepiped shape as a whole, and is adhered and fixed to the upper surface of the semiconductor device body 2 corresponding to the portion 4 having a large heat generation amount with a heat conductive adhesive. ing.

このとき、上記発熱量の大きい部位4に対応する半導体装置本体2の上面は、積載部位となり、上記発熱量の小さい部位5に対応する半導体装置本体2の上面は、非積載部位となる。   At this time, the upper surface of the semiconductor device body 2 corresponding to the portion 4 with the large amount of heat generation is a loading portion, and the top surface of the semiconductor device body 2 corresponding to the portion 5 with the small amount of heat generation is a non-loading portion.

上記半導体装置1は、上記のようにヒートシンク3を積載した構成とすることで、上記非積載部位を下段、上記積載部位に積載したヒートシンク3の上面を上段とする階段形状に形成している。   The semiconductor device 1 has a configuration in which the heat sinks 3 are stacked as described above, so that the non-loading portion is formed in a step shape and the upper surface of the heat sink 3 loaded on the loading portion is formed in a step shape.

以下では、本発明の半導体装置1を機器としての画像形成装置10に搭載する場合を例にとって説明する。   Hereinafter, a case where the semiconductor device 1 of the present invention is mounted on the image forming apparatus 10 as an apparatus will be described as an example.

上記画像形成装置10は、画像形成装置10本体の手前側を下にして傾斜を付けた操作パネル11を形成し、当該操作パネル11にてその裏面側に形成される画像形成装置10本体内の傾斜形状の搭載領域12に上記半導体装置1を配設している。   The image forming apparatus 10 forms an operation panel 11 that is inclined with the front side of the main body of the image forming apparatus 10 facing down, and the image forming apparatus 10 is formed on the back side of the operation panel 11. The semiconductor device 1 is disposed in the inclined mounting region 12.

このとき、上記半導体装置1は、上述したように、その形状を下段の前端角と上段の前端角を結んだ傾斜角の階段形状に形成しているため、当該半導体装置1の傾斜角と上記傾斜形状の搭載領域12の傾斜角とが一致し、図2(B)に示すように、上記半導体装置1の形状と上記傾斜形状の搭載領域12の形状とが整合した状態で搭載される。   At this time, as described above, since the semiconductor device 1 is formed in a stepped shape having an inclination angle connecting the lower front end angle and the upper front end angle, the inclination angle of the semiconductor device 1 and the above As shown in FIG. 2B, the inclined mounting region 12 is mounted in a state where the shape of the semiconductor device 1 and the shape of the inclined mounting region 12 are matched.

ところで、先述したその全体の形状を直方体形状に形成した従来の半導体装置20を、上記傾斜形状の搭載領域12に配設している場合を考察すると、図2(A)に示すように、当該半導体装置20の形状と当該傾斜形状の搭載領域12の形状の不整合が生じた状態で搭載される。   By the way, considering the case where the conventional semiconductor device 20 in which the entire shape described above is formed in a rectangular parallelepiped shape is disposed in the inclined mounting region 12, as shown in FIG. The semiconductor device 20 is mounted in a state where a mismatch between the shape of the semiconductor device 20 and the shape of the inclined mounting region 12 occurs.

図2に示すように、上記半導体装置1を上記傾斜形状の搭載領域12に搭載した場合と、上記半導体装置20を当該傾斜形状の搭載領域12に搭載した場合とを比較すると、当該半導体装置1を搭載した場合の方が、上記操作パネル11に鉛直方向に距離h分だけ上方に搭載される。   As shown in FIG. 2, when the semiconductor device 1 is mounted on the inclined mounting region 12 and the semiconductor device 20 is mounted on the inclined mounting region 12, the semiconductor device 1 is compared. Is mounted on the operation panel 11 by a distance h in the vertical direction.

したがって、この距離h分からなる搭載領域にさらにその他の装置を搭載できるため、上記半導体装置1を搭載した場合の方が、上記傾斜形状の搭載領域12を有効に利用していると言える。   Therefore, since another device can be mounted in the mounting area consisting of the distance h, it can be said that the mounting area 12 having the inclined shape is more effectively used when the semiconductor device 1 is mounted.

このようにすれば、半導体装置本体の一面の必要な局部に放熱体を当接して半導体装置を構成することで、半導体装置全体の形状を機器内の特殊搭載領域、例えば、傾斜形状の搭載領域等に整合する形状とすることができるため、放熱機能を損なわずに機器に合理的に搭載できる。   In this way, by configuring the semiconductor device by contacting the heat-dissipating body to the required local area on one surface of the semiconductor device body, the shape of the entire semiconductor device can be changed to a special mounting area in the device, for example, an inclined mounting area. Therefore, it can be rationally mounted on equipment without impairing the heat dissipation function.

前記発熱量の大きい回路は、前記装置本体の端部側に集中配置される構成としたので、半導体装置全体の形状を傾斜角の緩い傾斜形状の搭載領域に整合する形状とすることができる。   Since the circuit having a large amount of heat generation is configured to be concentrated on the end side of the device main body, the shape of the entire semiconductor device can be made to match the mounting region having an inclined shape with a gentle inclination angle.

なお、発熱量の大きい回路の集中配置部位は、上記半導体装置2の端部側に限定されず、当該半導体装置2の任意の部位であってもよい。このとき、例えば、その形状が山型形状の搭載領域に上記半導体装置1を搭載する場合、発熱量の大きい回路の集中配置部位を上記半導体装置本体2の中央部にすれば、当該半導体装置1の形状を山型形状の搭載領域に整合する形状とすることもできる。   It should be noted that the concentrated arrangement part of the circuit having a large calorific value is not limited to the end part side of the semiconductor device 2 and may be an arbitrary part of the semiconductor device 2. At this time, for example, in the case where the semiconductor device 1 is mounted in a mountain-shaped mounting region, if the concentrated arrangement portion of a circuit having a large calorific value is set at the central portion of the semiconductor device body 2, the semiconductor device 1. The shape can be made to match the mounting area of the mountain shape.

上記実施の形態で説明した構成は、単に具体例を示すものであり、本願発明の技術的範囲を制限するものではない。本願の効果を奏する範囲において、任意の構成を採用することが可能である。   The configuration described in the above embodiment is merely a specific example and does not limit the technical scope of the present invention. Any configuration can be employed within the scope of the effects of the present application.

半導体装置本体の一面の必要な局部に放熱体を当接して半導体装置を構成することで、半導体装置全体の形状を機器内の特殊搭載領域、例えば、傾斜形状の搭載領域等に整合する形状とすることができるため、放熱機能を損なわずに機器に合理的に搭載できる半導体装置として有用である。   A semiconductor device is configured by contacting a necessary heat sink on one surface of the semiconductor device main body, so that the shape of the entire semiconductor device matches a special mounting area in the device, for example, an inclined mounting area. Therefore, it is useful as a semiconductor device that can be reasonably mounted on equipment without impairing the heat dissipation function.

本発明の実施の形態における半導体装置を示す概略斜視図である。1 is a schematic perspective view showing a semiconductor device in an embodiment of the present invention. 本発明の半導体装置を画像形成装置に搭載した状態と従来の半導体装置を画像形成装置に搭載した状態との比較を示す模式図である。It is a schematic diagram showing a comparison between a state in which the semiconductor device of the present invention is mounted on an image forming apparatus and a state in which a conventional semiconductor device is mounted on an image forming apparatus. 従来の半導体装置を示す概略斜視図である。It is a schematic perspective view which shows the conventional semiconductor device.

符号の説明Explanation of symbols

1 半導体装置
2 半導体装置本体
3 ヒートシンク
4 発熱量の大きい部位
5 発熱量の小さい部位
10 画像形成装置
11 操作パネル
12 傾斜形状の搭載領域
20 半導体装置
21 発熱体冷却装置
22 半導体装置本体
DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Semiconductor device main body 3 Heat sink 4 Part with large calorific value 5 Part with small calorific value 10 Image forming apparatus 11 Operation panel 12 Inclined mounting area 20 Semiconductor device 21 Heating element cooling device 22 Semiconductor device main body

Claims (3)

複数の回路で構成される装置本体の一面に放熱体を当接する半導体装置において、
発熱量の大きい回路と発熱量の小さい回路とに種別して種別毎に集中配置される前記複数の回路と、
前記発熱量の大きい回路の集中配置部位に対応する前記装置本体の一面の局部に当接する前記放熱体と、
を備えたことを特徴とする半導体装置。
In a semiconductor device in which a radiator is abutted against one surface of a device body composed of a plurality of circuits,
The plurality of circuits arranged in a concentrated manner for each type by classifying into a circuit with a large amount of heat generation and a circuit with a small amount of heat generation,
The heat dissipating member in contact with a local portion of one surface of the apparatus main body corresponding to a concentrated arrangement portion of a circuit having a large calorific value; and
A semiconductor device comprising:
前記発熱量の大きい回路は、前記装置本体の端部側に集中配置される請求項1記載の半導体装置。   The semiconductor device according to claim 1, wherein the circuit having a large amount of heat generation is concentrated on an end side of the device main body. 前記放熱体は、ヒートシンクである請求項1又は2記載の半導体装置。
The semiconductor device according to claim 1, wherein the heat radiator is a heat sink.
JP2005069651A 2005-03-11 2005-03-11 Semiconductor device Pending JP2006253494A (en)

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JP2005069651A JP2006253494A (en) 2005-03-11 2005-03-11 Semiconductor device

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JP2005069651A JP2006253494A (en) 2005-03-11 2005-03-11 Semiconductor device

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