JP2006248867A - Precisely processed electroconductive glass member - Google Patents
Precisely processed electroconductive glass member Download PDFInfo
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- JP2006248867A JP2006248867A JP2005070182A JP2005070182A JP2006248867A JP 2006248867 A JP2006248867 A JP 2006248867A JP 2005070182 A JP2005070182 A JP 2005070182A JP 2005070182 A JP2005070182 A JP 2005070182A JP 2006248867 A JP2006248867 A JP 2006248867A
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- 239000011521 glass Substances 0.000 title claims abstract description 53
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 11
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910001935 vanadium oxide Inorganic materials 0.000 claims abstract description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 14
- 238000009825 accumulation Methods 0.000 abstract description 7
- 230000015556 catabolic process Effects 0.000 abstract description 5
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 17
- 150000002500 ions Chemical class 0.000 description 11
- 239000010949 copper Substances 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 229910000906 Bronze Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 239000010974 bronze Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 230000004075 alteration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- -1 silicon ions Chemical class 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
本発明は、荷電粒子を取扱う系たとえば電子顕微鏡、イオンビーム照射による加工機のほか半導体素子等の製造工程におけるエッチングやスパッタ蒸着による成膜等に用いられるプラズマ発生装置における電極のような、精密加工された導電性ガラス部材に関する。 The present invention relates to a system for handling charged particles, such as an electron microscope, a processing machine using ion beam irradiation, as well as an electrode in a plasma generator used for etching in a manufacturing process of a semiconductor element, etc., or film formation by sputter deposition. It is related with the made conductive glass member.
荷電粒子を取扱う系たとえば電子顕微鏡、イオンビーム照射による加工機等にあっては、ハードウエアを構成する部材は、荷電粒子の照射による電荷の蓄積によって種々の弊害たとえば荷電粒子軌道のずれや静電破壊を惹起することがある。而して、従来、エッチングやスパッタ蒸着による成膜等に用いられるプラズマ発生装置における電極等には金属たとえばチタン、鉄などを用いている(たとえば、特許文献1参照)。これらプラズマ発生装置にあっては、電極対間に高い電圧が印加されるとともに電流(イオン、電子)を流す必要があるためである。一般に、プラズマを発生させるには、電極対間隔を小さくするか印加電圧を高くする。
上記従来技術におけるように、プラズマ発生装置用電極に金属材料を用い接地をとるようにすると電荷の蓄積に起因する問題は解決されるものの、金属材料はプラズマ中に曝露されると表面に酸化膜を形成し、電極としての機能を喪失してくる。而して、電極への印加電圧をさらに高くしないとプラズマを発生しなくなることがある。また、電極の表面性状の変化によってプラズマ発生条件も変ってくるとともに、プラズマ発生中も不安定な状態となる。 As in the above prior art, if a metal material is used for the electrode for the plasma generator and grounded, the problem due to charge accumulation is solved. However, when the metal material is exposed to plasma, an oxide film is formed on the surface. And the function as an electrode is lost. Thus, plasma may not be generated unless the voltage applied to the electrode is further increased. In addition, the plasma generation conditions change due to changes in the surface properties of the electrodes, and an unstable state occurs during plasma generation.
一般に、寸法精度が1.0μm未満のサブミクロンオーダとなる精密加工には、イオンビーム照射による加工法が適用される。処で、プラズマ発生装置における電極対間隔を20μm〜50μmといったレベルに小さくしようとする場合、電極が金属材料である場合は、イオンビーム照射による加工によって表面が粗くなり、寸法精度に限界がある。また、電極がたとえば銅である場合は、イオンビーム照射による加工に7時間以上を要する。 In general, a processing method using ion beam irradiation is applied to precision processing with a dimensional accuracy of submicron order of less than 1.0 μm. By the way, when the electrode pair interval in the plasma generator is to be reduced to a level of 20 μm to 50 μm, when the electrode is a metal material, the surface becomes rough due to processing by ion beam irradiation, and the dimensional accuracy is limited. Further, when the electrode is, for example, copper, it takes 7 hours or more for processing by ion beam irradiation.
本発明は、荷電粒子を取扱う系たとえば電子顕微鏡、イオンビーム照射による加工機或はエッチングやスパッタ蒸着による成膜等に用いられるプラズマ発生装置における電極のような部材であって、たとえばイオンビーム照射或はレーザビーム照射による加工法によって高い寸法精度下に加工ができるとともに、荷電粒子の照射によっても電荷が蓄積されない部材を提供することを目的としている。また、本発明の他の目的は、エッチングやスパッタ蒸着による成膜等に用いられるプラズマ発生装置における電極であって、たとえばイオンビーム照射による加工法によって高い寸法精度下に加工ができるとともに荷電粒子の照射によっても電荷が蓄積されないという特性と併せ、ガスとして四塩化炭素(CCl4)といった腐食性ガスや大気を用いても電極表面に変質を招くことなく安定したプラズマ発生が可能なプラズマ発生装置用電極部材を提供することである。 The present invention relates to a member such as an electrode in a system for handling charged particles such as an electron microscope, a processing machine using ion beam irradiation, or a plasma generator used for film formation by etching or sputter deposition. An object of the present invention is to provide a member that can be processed with high dimensional accuracy by a processing method using laser beam irradiation and in which charges are not accumulated by irradiation of charged particles. Another object of the present invention is an electrode in a plasma generator used for film formation by etching or sputter deposition, which can be processed with high dimensional accuracy by a processing method using, for example, ion beam irradiation, and can be used for charged particles. Combined with the property that charges are not accumulated even by irradiation, and for plasma generators that can generate stable plasma without causing alteration on the electrode surface even when corrosive gas such as carbon tetrachloride (CCl 4 ) or air is used as the gas. It is to provide an electrode member.
上記課題を解決するための、請求項1に記載の発明は、導電性ガラスにイオンビーム照射又はレーザビーム照射による加工を施して得られる精密加工された導電性ガラス部材である。
In order to solve the above-mentioned problems, the invention according to
請求項2に記載の発明は、導電性ガラス部材が、エッチングやスパッタ蒸着による成膜等に用いられるプラズマ発生装置用電極である請求項1に記載の精密加工された導電性ガラス部材である。
The invention described in claim 2 is the precision-processed conductive glass member according to
請求項3に記載の発明は、導電性ガラスが、酸化バナジウムを主成分とする、電気伝導度が少なくとも1×10−8S/cmである導電性バナジン酸塩ガラスである請求項1又は請求項2に記載の精密加工された導電性ガラス部材である。
According to a third aspect of the present invention, the conductive glass is a conductive vanadate glass mainly composed of vanadium oxide and having an electric conductivity of at least 1 × 10 −8 S / cm.
本発明によれば、荷電粒子を取扱う系たとえば電子顕微鏡といった光学機器、イオンビーム照射による加工機、エッチングやスパッタ蒸着による成膜等に用いられるプラズマ発生装置などの部材として電荷の蓄積を招くことなく従って、荷電粒子の軌道のずれを生じることなく安定した稼動状態を得ることができる。また、エッチングやスパッタ蒸着による成膜等に用いられるプラズマ発生装置における電極にあっては、耐腐食性に優れているからガスとして四塩化炭素(CCl4)といった腐食性ガスや大気を用いても電極表面に変質を招くことなく安定したプラズマ発生が可能なプラズマ発生装置用電極部材を提供することができる。さらに、導電性ガラスわけても導電性バナジン酸塩ガラスは、イオンビーム照射による精密加工性に優れているから1.0μm未満のいわゆるサブミクロンオーダの高い寸法精度の部材を提供することができる。 According to the present invention, charge accumulation as a member of a system for handling charged particles such as an optical device such as an electron microscope, a processing machine using ion beam irradiation, a plasma generator used for film formation by etching or sputter deposition, etc. is not caused. Therefore, a stable operating state can be obtained without causing a shift in the trajectory of the charged particles. In addition, since an electrode in a plasma generator used for film formation by etching or sputter deposition is excellent in corrosion resistance, a corrosive gas such as carbon tetrachloride (CCl 4 ) or the atmosphere may be used as a gas. It is possible to provide an electrode member for a plasma generator capable of generating stable plasma without causing alteration on the electrode surface. Furthermore, conductive glass, particularly conductive vanadate glass, is excellent in precision workability by ion beam irradiation, and therefore can provide a member with a so-called submicron order high dimensional accuracy of less than 1.0 μm.
特に、エッチングやスパッタ蒸着による成膜等に用いられるプラズマ発生装置用電極に本発明の導電性ガラス部材を用いるときは、イオンビーム照射によるサブミクロンオーダの微細加工が可能である処から20μm〜50μmといった小さな電極対間隔の装置が可能であり、低い印加電圧で安定したプラズマ発生が可能となる。また、導電性ガラスわけても導電性バナジン酸塩ガラスは、耐腐食性に優れているからガスとして四塩化炭素(CCl4)といった腐食性ガスや大気を用いても電極表面に変質を生起することなく、電極の寸法精度や表面性状に経時劣化を招き難い。 In particular, when the conductive glass member of the present invention is used for an electrode for a plasma generator used for film formation by etching or sputter deposition, it is 20 μm to 50 μm because fine processing of submicron order by ion beam irradiation is possible. Thus, it is possible to generate a stable plasma with a low applied voltage. Moreover, even if it is conductive glass, and conductive vanadate glass is excellent in corrosion resistance, even if corrosive gas such as carbon tetrachloride (CCl 4 ) or air is used as gas, it does not cause alteration on the electrode surface. In addition, it is difficult for the dimensional accuracy and surface properties of the electrode to deteriorate over time.
本発明で対象とする荷電粒子を取扱う光学系機器等にあって、光学系機器を構成する部材として、電荷の蓄積を生ぜしめることなく高い寸法精度を有する部材を得るには、電荷の蓄積を接地によりディスチャージできる導電性を有する材料であって、サブミクロンオーダといった高い寸法精度の加工たとえばイオンビーム照射による高能率の微細加工が可能であることが必要である。 In an optical system device or the like that handles charged particles targeted by the present invention, as a member constituting the optical system device, in order to obtain a member having high dimensional accuracy without causing charge accumulation, charge accumulation is performed. It is a conductive material that can be discharged by grounding, and it is necessary to be able to perform high-efficiency fine processing by high-dimensional accuracy processing such as submicron order, for example, ion beam irradiation.
これらの条件を満足するためには、イオンビーム照射による加工を部材に施す場合、照射イオン原子たとえばGaの原子量よりも小さな原子量の原子であって、照射イオンエネルギーよりも低い結合エネルギーの原子をその組成中に有せしめることが可能な材料であることが必要である。即ち、加工対象に照射されるイオンビームの原子量よりも小さな原子量の成分を加工対象(基材)中に含有せしめておくことによって加工能率を大きく向上させることができる。 In order to satisfy these conditions, when processing by ion beam irradiation is performed on the member, atoms having an atomic weight smaller than the atomic weight of irradiated ion atoms, for example, Ga, and having binding energy lower than the irradiated ion energy are selected. It must be a material that can be included in the composition. That is, the processing efficiency can be greatly improved by containing a component having an atomic weight smaller than the atomic weight of the ion beam irradiated to the processing target in the processing target (base material).
たとえば原子量:69.723のGaイオンを原子量:63.546の銅(Cu)基材に照射して加工を施す場合、Gaイオンを現実的な加速電圧である30kVで加速して10μmの立方形キャビティを穿設するのに数時間〜10時間を要する。処が、銅(Cu)にGaよりも小さな原子量:30.9737の燐(P)を添加して燐青銅とすると、燐青銅には原子量:118の錫(Sn)が含まれているにも拘らず、イオンビーム照射による加工能率(through put)は銅(Cu)の場合の20倍〜30倍になる。発明者らは、Gaのイオンと燐(P)の衝突によって燐(P)が弾き飛ばされて燐青銅を高能率下に加工するものと考えている。このように、イオンビームのイオンの原子量よりも小さな原子量の元素(イオンのエネルギーを十分に得て剥離しやすい元素)を成分として基材に含有せしめておくことによって、イオンビームによる高能率下での加工が可能となる。本発明においては、原子量:69.723のGaイオンよりも小さな原子量:50.9415のバナジウム(V)を主成分とする導電性バナジン酸塩ガラスを用いている。 For example, when processing is performed by irradiating a copper (Cu) base material having an atomic weight of 69.723 to an atomic weight of 63.546, the Ga ions are accelerated at a practical acceleration voltage of 30 kV to form a 10 μm cubic shape. It takes several hours to 10 hours to form the cavity. When phosphorous bronze is obtained by adding phosphorus (P) having an atomic weight of 30.9737 smaller than Ga to copper (Cu), the phosphor bronze contains tin (Sn) having an atomic weight of 118. Regardless, the processing efficiency (through put) by ion beam irradiation is 20 to 30 times that of copper (Cu). The inventors believe that phosphor bronze (P) is repelled by collision of Ga ions and phosphorus (P) to process phosphor bronze with high efficiency. In this way, an element with an atomic weight smaller than the atomic weight of ions in the ion beam (an element that easily obtains ion energy and easily peels off) is contained in the base material as a component, thereby reducing the efficiency of the ion beam. Can be processed. In the present invention, a conductive vanadate glass mainly composed of vanadium (V) having an atomic weight of 50.9415 smaller than Ga ions having an atomic weight of 69.723 is used.
次に、イオンビーム照射による加工に際して、加工対象である材料に電荷を蓄積することなく加工の途次において静電破壊等を招くことがないようにすることが必要である。本発明は、発明者の1人が開発した酸化バナジウム(V2O5)を主成分とする導電性バナジン酸塩ガラスを基材とすることによって、イオンビーム照射の進行に伴う帯電に起因する加工能率および加工寸法精度の低下を抑止することができる。本発明においては、1.0×10−1S/cm〜1.0×10−8S/cm〜といった電気伝導度を有する導電性ガラスを用いる。このような電気特性をもつ導電性ガラスとして、(5〜20)BaO・(5〜20)Fe2O3・残部:V2O5からなる導電性ガラスを基材とすることができる。良好な導電性をガラスに付与すべく、上記組成物を融解・冷却して得られるガラスに300℃〜500℃の温度域で10分間〜180分間の熱処理を施す。たとえば460℃で30分間の熱処理を施す。そうすることによって、4.0×10−2S/cmといった優れた導電性を有するガラスを得ることができる。この導電性ガラスを用いることによって、イオンビーム照射による部材の加工ならびに、部材として荷電粒子を取扱う系の構成要素として用いる場合も電荷の蓄積に起因する静電破壊を惹起することなく従って、マイクロクラックの発生がなく加工能率も高い。 Next, in processing by ion beam irradiation, it is necessary to prevent electrostatic breakdown or the like in the course of processing without accumulating charges in the material to be processed. The present invention is based on a conductive vanadate glass mainly composed of vanadium oxide (V 2 O 5 ) developed by one of the inventors, resulting in charging due to the progress of ion beam irradiation. A reduction in machining efficiency and machining dimensional accuracy can be suppressed. In the present invention, conductive glass having an electric conductivity of 1.0 × 10 −1 S / cm to 1.0 × 10 −8 S / cm is used. As a conductive glass having such electrical characteristics, a conductive glass composed of (5-20) BaO. (5-20) Fe 2 O 3 and the balance: V 2 O 5 can be used as a base material. In order to impart good electrical conductivity to the glass, the glass obtained by melting and cooling the composition is subjected to a heat treatment for 10 minutes to 180 minutes in a temperature range of 300 ° C. to 500 ° C. For example, heat treatment is performed at 460 ° C. for 30 minutes. By doing so, the glass which has the outstanding electroconductivity of 4.0 * 10 <-2 > S / cm can be obtained. By using this conductive glass, it is possible to process a member by ion beam irradiation and to use it as a component of a system that handles charged particles as a member without causing electrostatic breakdown due to charge accumulation. There is no generation and processing efficiency is high.
また、本発明の部材はその材料(基材)の調達が簡単であることが好ましい。本発明で用いる導電性ガラスわけても導電性バナジン酸塩ガラスは、その調達がきわめて容易である。 Moreover, it is preferable that procurement of the material (base material) of the member of the present invention is simple. In particular, the conductive vanadate glass used in the present invention is very easy to procure.
15BaO・70V2O5・15Fe2O3からなる組成物を融解・冷却して得られたガラスに430℃で60分間の熱処理を施した。4.0×10−2S/cmの電気伝導度をもつガラスであった。この導電性ガラスを基材として、Gaイオンを30kVで加速し、ビーム枠:10μm×100μm、ビーム電流:1μA〜100μAの条件でイオンビームを照射し、100μm(幅)×1000μm(長さ)×2μm(深さ)の溝を穿設した。 A glass obtained by melting and cooling a composition composed of 15BaO · 70V 2 O 5 · 15Fe 2 O 3 was subjected to a heat treatment at 430 ° C. for 60 minutes. The glass had an electric conductivity of 4.0 × 10 −2 S / cm. Using this conductive glass as a base material, Ga ions are accelerated at 30 kV, irradiated with an ion beam under the conditions of a beam frame: 10 μm × 100 μm and a beam current: 1 μA to 100 μA, and 100 μm (width) × 1000 μm (length) × A 2 μm (depth) groove was drilled.
(比較例1)
比較のために、基材を通常のガラス、燐青銅、銅とし、他は実施例1におけると同一として、本発明によるものと加工時間を比較した。その結果を表1に示す。
(Comparative Example 1)
For comparison, the processing time was compared with that according to the present invention, assuming that the base material was normal glass, phosphor bronze, copper, and others were the same as in Example 1. The results are shown in Table 1.
表1から明らかなように、本発明によるときはイオンビーム照射の進行に伴う静電破壊がなくしかも、約1.4倍の加工能率下での加工が可能である。 As is clear from Table 1, according to the present invention, there is no electrostatic breakdown accompanying the progress of ion beam irradiation, and processing at a processing efficiency of about 1.4 times is possible.
15BaO・70V2O5・15Fe2O3からなる組成物を融解・冷却して得られたガラスに430℃で60分間の熱処理を施した。4.0×10−2S/cmの電気伝導度をもつガラスであった。この導電性ガラスを基材として、Gaイオンを30kVで加速し、ビーム枠:0.5μm×0.5μm、ビーム電流:1nA〜1μAの条件でイオンビームを照射し、100μm(幅)×1000μm(長さ)×2μm(深さ)の溝を穿設した。 A glass obtained by melting and cooling a composition composed of 15BaO · 70V 2 O 5 · 15Fe 2 O 3 was subjected to a heat treatment at 430 ° C. for 60 minutes. The glass had an electric conductivity of 4.0 × 10 −2 S / cm. Using this conductive glass as a base material, Ga ions are accelerated at 30 kV, irradiated with an ion beam under the conditions of a beam frame: 0.5 μm × 0.5 μm and a beam current: 1 nA to 1 μA, and 100 μm (width) × 1000 μm ( A groove of length) × 2 μm (depth) was drilled.
(比較例2)
比較のために、基材を通常のガラス、燐青銅、銅とし、他は実施例1におけると同一として、本発明によるものと加工時間を比較した。その結果を表2に示す。
(Comparative Example 2)
For comparison, the processing time was compared with that according to the present invention, assuming that the base material was normal glass, phosphor bronze, copper, and others were the same as in Example 1. The results are shown in Table 2.
表2から明らかなように、本発明によれば、高い寸法精度を維持して静電破壊の虞なくイオンビーム照射による加工を遂行することができる。このように、ビーム枠を0.5μm×0.5μmと同一にしても実施例2と比較例2とでは、基材の相異によってイオンビーム照射の進行に伴ってビームと基材にずれを生じて微細な寸法・形状の加工が困難となる。通常のガラスを用いる場合も、イオンビーム照射の継続でガラスに蓄積される荷電粒子の作用によって加工性が低下するとともにイオンビームの位置をずらしてしまう現象を生ずるものと考えられる。また、レーザビーム照射による加工を行う場合、通常ガラスのような導電性の低い材料が加工対象である場合、熱が材料に蓄積されてコーナ部が溶融・変形する、いわゆる「だれ」を生じて形状・寸法を損なうが、導電性ガラスを用いる場合は、このような形状・寸法の劣化がない。 As is apparent from Table 2, according to the present invention, high dimensional accuracy can be maintained and processing by ion beam irradiation can be performed without the risk of electrostatic breakdown. In this way, even if the beam frame is the same as 0.5 μm × 0.5 μm, in Example 2 and Comparative Example 2, the beam and the substrate are displaced as the ion beam irradiation proceeds due to the difference in the substrate. As a result, it becomes difficult to process fine dimensions and shapes. Even in the case of using ordinary glass, it is considered that the workability deteriorates and the position of the ion beam is shifted due to the action of charged particles accumulated in the glass as the ion beam irradiation continues. Also, when processing by laser beam irradiation, when a material with low conductivity, such as glass, is usually the object to be processed, heat is accumulated in the material and the corner portion melts and deforms, so-called “sag” occurs. Although the shape and dimensions are impaired, there is no such deterioration of the shape and dimensions when using conductive glass.
実施例2において得られるキャビティの表面粗さを従来技術と本発明において比較した結果を、表3に示す。表面粗さは、図1に示すように、表面の凹凸の最大山高さと最大谷深さの範囲で定義した。 Table 3 shows the result of comparing the surface roughness of the cavity obtained in Example 2 in the prior art and the present invention. As shown in FIG. 1, the surface roughness was defined in the range of the maximum peak height and the maximum valley depth of the surface irregularities.
15BaO・70V2O5・15Fe2O3からなる組成物を融解・冷却して得られたガラスに430℃で60分間の熱処理を施した。4.0×10−2S/cmの電気伝導度をもつガラスであった。この導電性ガラスを基材として、図2(a)、(b)、(c)に示すプロセスで図3に示す、エッチングやスパッタ蒸着による成膜等に用いられるプラズマ発生装置用電極を作製した。即ち、Gaイオンを30kVで加速し、ビーム枠:0.5μm×0.5μm、ビーム電流:1nA〜1μAの条件でイオンビームを照射し、図2(a)に示す導電性バナジン酸塩ガラス基材1を図2(b)に示すように白抜き部分を除去して電極対2を形成する。最後に、高抵抗部分4を形成して図3に示すプラズマ発生装置用電極とする。図3において、電極対間隔3の寸法a=0.2μm、電極の幅b=3μm、高さc=1.5μmである。高抵抗部分4を形成するには、たとえば、当該部分に酸素イオンとシリコンイオンをイオン打ち込みして二酸化珪素を形成する。こうして、高抵抗化部分4を形成することができる。
A glass obtained by melting and cooling a composition composed of 15BaO · 70V 2 O 5 · 15Fe 2 O 3 was subjected to a heat treatment at 430 ° C. for 60 minutes. The glass had an electric conductivity of 4.0 × 10 −2 S / cm. Using this conductive glass as a base material, an electrode for a plasma generator used for film formation by etching or sputter deposition shown in FIG. 3 was produced by the process shown in FIGS. 2A, 2B, and 2C. . That is, Ga ions are accelerated at 30 kV, irradiated with an ion beam under the conditions of beam frame: 0.5 μm × 0.5 μm, beam current: 1 nA to 1 μA, and the conductive vanadate glass substrate shown in FIG. As shown in FIG. 2B, the white portion of the
本発明の部材は、上記実施例に示したものに限定されるものではなく、図4に示すねじ等も含まれる。 The members of the present invention are not limited to those shown in the above embodiment, and include screws and the like shown in FIG.
本発明の部材は、イオンビーム照射による加工に適しており、従って、きわめて微細な精密加工が可能であってプラズマ発生装置の部材・電極や荷電粒子の取扱いによって電荷が蓄積することが好ましくない系で使用される部品や処理対象部材であって、高度の寸法精度が要求される部材として応用範囲がある。 The member of the present invention is suitable for processing by ion beam irradiation. Therefore, it is possible to perform extremely fine precision processing, and it is not preferable that charges are accumulated due to handling of members / electrodes and charged particles of a plasma generator. There is a range of applications as a component or a member to be processed, which requires high dimensional accuracy.
1 導電性ガラス基材
2 電極対
3 電極対間隔
4 高抵抗化部分
5 イオンビーム照射による切除部分
DESCRIPTION OF
Claims (3)
The precision-processed conductive material according to claim 1 or 2, wherein the conductive glass is a conductive vanadate glass mainly composed of vanadium oxide and having an electric conductivity of at least 1 x 10-8 S / cm. Glass member.
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WO2007114318A1 (en) * | 2006-03-31 | 2007-10-11 | Kitakyushu Foundation For The Advancement Of Industry, Science And Technology | Process for producing vanadate glass |
WO2008059641A1 (en) * | 2006-11-13 | 2008-05-22 | Tokai Industry Corp. | Electrical/electronic circuit system with conductive glass member |
WO2008059847A1 (en) | 2006-11-13 | 2008-05-22 | Tokai Industry Corp. | Electric/electronic circuit system with conductive glass member |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003034548A (en) * | 2001-07-18 | 2003-02-07 | Kitakyushu Foundation For The Advancement Of Industry Science & Technology | Vanadate glass and its manufacturing method |
JP2003145287A (en) * | 2001-11-08 | 2003-05-20 | Fine Device:Kk | Method for working hard and brittle material |
JP2004002181A (en) * | 2002-04-24 | 2004-01-08 | Kitakyushu Foundation For The Advancement Of Industry Science & Technology | Conductive vanadate glass and manufacture method thereof |
JP2004331416A (en) * | 2003-04-30 | 2004-11-25 | Kitakyushu Foundation For The Advancement Of Industry Science & Technology | Electroconductive glass having mixed conductivity and its manufacturing method |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003034548A (en) * | 2001-07-18 | 2003-02-07 | Kitakyushu Foundation For The Advancement Of Industry Science & Technology | Vanadate glass and its manufacturing method |
JP2003145287A (en) * | 2001-11-08 | 2003-05-20 | Fine Device:Kk | Method for working hard and brittle material |
JP2004002181A (en) * | 2002-04-24 | 2004-01-08 | Kitakyushu Foundation For The Advancement Of Industry Science & Technology | Conductive vanadate glass and manufacture method thereof |
JP2004331416A (en) * | 2003-04-30 | 2004-11-25 | Kitakyushu Foundation For The Advancement Of Industry Science & Technology | Electroconductive glass having mixed conductivity and its manufacturing method |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007114318A1 (en) * | 2006-03-31 | 2007-10-11 | Kitakyushu Foundation For The Advancement Of Industry, Science And Technology | Process for producing vanadate glass |
JP5164072B2 (en) * | 2006-03-31 | 2013-03-13 | 公益財団法人北九州産業学術推進機構 | Manufacturing method of vanadate glass |
WO2008059641A1 (en) * | 2006-11-13 | 2008-05-22 | Tokai Industry Corp. | Electrical/electronic circuit system with conductive glass member |
WO2008059847A1 (en) | 2006-11-13 | 2008-05-22 | Tokai Industry Corp. | Electric/electronic circuit system with conductive glass member |
EP2117096A1 (en) * | 2006-11-13 | 2009-11-11 | Tokai Industry Corp. | Electric/electronic circuit system with conductive glass member |
EP2117096A4 (en) * | 2006-11-13 | 2010-10-20 | Tokai Industry Corp | Electric/electronic circuit system with conductive glass member |
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