JP2006245544A - Substrate with pattern arranged and forming method thereof, and semiconductor device and preparing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for preparing a substrate with a particularly narrow and thick pattern capable of controlling a distance between adjacent film patterns and controlling the width of a film pattern, and to provide a method for preparing a substrate having conductive film of high electromotive force in which dispersion in inductance of antenna is scarce. <P>SOLUTION: The method for forming patterns, wherein a composition is printed on a film surface where silicon and oxygen are bonded and an inactive group is bonded to the silicon with a printing method, and the composition is sintered to form a film pattern after the film where silicon and oxygen are bonded and the inactive group is bonded to the silicon is formed on a substrate, an insulating film or a conductive film. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

The present invention relates to a substrate with a pattern such as an insulating film, a conductive film, and a semiconductor film formed by using a screen printing method, and a method for forming the same. The present invention also relates to a semiconductor device having a film pattern formed by a screen printing method and a manufacturing method thereof.

In the screen printing method, as shown in FIG. 2B, a screen printing plate 100 having a wire mesh (mesh) 104 and a mask emulsion 105 is provided on a frame 103 above a substrate 101, and FIG. As shown, the composition 106 is provided on a screen printing plate, and the composition 106 is extruded while being pressed using a squeegee 107 or a roller, and applied to the surface of the substrate 101. Here, FIG. 2B is a perspective view of a substrate provided with a screen printing plate, and a cross-sectional view taken along line AB is shown in FIG.

Thereafter, as shown in FIG. 2C, the composition 111 applied on the substrate 101 is dried and baked to form a film pattern 131 as shown in FIGS. 2D and 2E. To do.

The screen printing method is advantageous in terms of manufacturing cost and throughput because the number of steps and the number of necessary devices are small and the manufacturing method is relatively simple. For this reason, it is employed in a process for forming wirings provided on a substrate, partition walls included in a plasma display panel or a light emitting display device, pixel electrodes, solder bumps such as IC and LSI, and packages covering semiconductor elements.

However, when the composition is printed on the substrate by the screen printing method, the compositions applied by filling the openings of the mesh are in contact with each other to form a linear composition. Therefore, in the region 132 of the composition applied by filling the opening and the region 133 of the connected composition, as shown in the top view of FIG. A composition with a curved shape is formed. That is, the interval 134 between the adjacent film patterns 131 is different. The surface of the composition also has a different film thickness corresponding to the opening of the mask, and the surface is uneven.

Similarly, the film pattern obtained by baking the paste having such a shape has different intervals between adjacent film patterns. Moreover, the surface is uneven.

It is also called a wireless chip (ID tag, IC tag, IC chip, RF (Radio Frequency) tag, wireless tag, electronic tag, RFID (Radio Frequency Identification)) that can receive and transmit data wirelessly using such a film pattern. When the antenna is formed, the inductance of the antenna is changed, which causes a problem that the resonance frequency is lowered and the electromotive force is lowered accordingly. There is also a problem that it is easy to short-circuit with an adjacent antenna.

Further, in the region 133 where the line width of the composition is narrow, there is a problem in that the compositions are easily separated from each other and the yield is reduced. Furthermore, depending on the viscosity of the composition, the film thickness of the conductive film becomes thin. As a technique for avoiding this, there is a method of printing the composition a plurality of times, but there are problems that the number of steps increases and adjacent compositions are connected.

Therefore, the present invention provides a method for manufacturing a patterned substrate capable of controlling the interval between adjacent film patterns. In addition, it is possible to control the width of the film pattern, and particularly to provide a method for manufacturing a patterned substrate having a narrow width and a large thickness. It is another object of the present invention to provide a method for manufacturing a substrate having a conductive film with high electromotive force with less variation in antenna inductance. It is another object to provide a method for manufacturing a semiconductor device with high yield.

According to one embodiment of the present invention, after a film in which silicon and oxygen are combined and an inactive group is combined with the silicon is formed over a substrate, an insulating film, or a conductive film, the silicon and oxygen are combined and the silicon is not bonded to the silicon. A method for forming a substrate with a film pattern, and a method for manufacturing a semiconductor device, comprising printing a composition on a film surface to which an active group is bonded using a printing method and baking the composition to form a film pattern It is.

A film in which silicon and oxygen are combined and an inactive group is combined with the silicon is formed over one surface of a substrate, an insulating film, or a conductive film.

The film pattern is a conductive film, an insulating film, or a semiconductor film.

When the film pattern is a conductive film, the film pattern functions as an antenna, a pixel electrode, and a wiring. When the film pattern is an insulating film, it functions as a partition layer. When the film pattern is a semiconductor film, it functions as an active region of the semiconductor element.

According to another aspect of the present invention, a semiconductor element is formed over a substrate, an insulating film that covers the semiconductor element and has an opening that exposes part of the conductive film connected to the semiconductor element is formed. A film in which silicon and oxygen are bonded and an inert group is bonded to the silicon is formed on the conductive film, and the silicon and oxygen are bonded and an inert group is bonded to the silicon. A method for manufacturing a semiconductor device is characterized in that a composition is printed using a printing method, and the composition is baked to form a conductive film.

A film in which silicon and oxygen are bonded and an inactive group is bonded to the silicon is formed over one surface of the insulating film and the exposed surface of the conductive film.

Another aspect of the present invention is a film in which silicon and oxygen are combined on the substrate and an inert group is bonded to the silicon, and a film in which the silicon and oxygen are bonded and an inert group is bonded to the silicon. It is a substrate with a pattern formed on it.

A film in which silicon and oxygen are bonded and an inactive group is bonded to the silicon is formed on one surface of the substrate on which a film pattern is formed.

The film pattern is a conductive film, an insulating film, or a semiconductor film.

When the film pattern is a conductive film, the film pattern functions as an antenna, a pixel electrode, and a wiring. When the film pattern is an insulating film, it functions as a partition layer. When the film pattern is a semiconductor film, it functions as an active region of the semiconductor element.

In addition, according to one embodiment of the present invention, a semiconductor element on a substrate, a conductive film connected to a source region or a drain region of the semiconductor element, and silicon and oxygen formed on the surface of the conductive film are combined and are not bonded to the silicon. A semiconductor device comprising: a film to which an active group is bonded; and a conductive film formed on the film to which silicon and oxygen are bonded and an inactive group is bonded to silicon.

A film in which silicon and oxygen are bonded and an inactive group is bonded to the silicon is formed over one surface of the conductive film.

The inert group of the film in which silicon and oxygen are bonded and the inert group is bonded to the silicon is at least one functional group selected from a fluoroalkyl group, an alkyl group, a fluoroallyl group, and an allyl group. .

In the present invention, unevenness on the side surface of the film pattern, that is, undulation can be reduced by applying the composition by a printing method onto a film in which silicon and oxygen are combined and an inert group is combined with the silicon. . For this reason, it is possible to form a film pattern having a uniform width and adjacent interval.

By using such a film pattern for an antenna, an antenna with little variation in inductance can be formed. In addition, an antenna with high electromotive force can be formed. In addition, by using such a film pattern for a wiring, a partition wall layer, or the like, a semiconductor device with little variation can be manufactured.

  Embodiments of the present invention will be described below with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of this embodiment mode. Note that in all the drawings for describing the embodiments, the same portions or portions having similar functions are denoted by the same reference numerals, and repetitive description thereof is omitted.

  Here, a process of forming a film pattern on a substrate by a screen printing method will be described with reference to FIG.

1A, 1C, and 1D are cross-sectional views of a patterned substrate, and FIGS. 1B and 1E are perspective views of the patterned substrate. 1B is a cross-sectional view taken along the line AB in FIG. 1B, and FIG. 1D is a cross-sectional view taken along the line AB in FIG.

A film 102 having oxygen, silicon, and an inert group is formed over the substrate 101. Next, a composition is applied to the film 102 having oxygen, silicon, and an inert group by a screen printing method. Specifically, a screen printing plate 100 in which a wire mesh (mesh) 104 and a mask emulsion 105 are provided in a frame 103 is provided on a substrate. Next, a composition (paste) 106 is provided on the screen printing plate, and the composition 106 is extruded using a squeegee 107 or a roller. As a result, the composition 111 can be applied over the film 102 having oxygen, silicon, and an inert group (see FIGS. 1A to 1C). In addition, before extruding a composition with a squeegee or a roller, you may spread a composition on a screen printing plate with a scraper.

Next, by drying and baking the applied composition 111, the film pattern 112 can be formed (see FIGS. 1D and 1E).

As the substrate 101, a glass substrate, a quartz substrate, a substrate formed of an insulating material such as ceramic such as alumina, a plastic substrate, a silicon wafer, a metal plate, or the like can be used.

Representative examples of plastic substrates include PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PES (polyethersulfone), polypropylene, polypropylene sulfide, polycarbonate (PC), polyetherimide, polyphenylenesulfone, polyphenylene oxide, polysulfone, Plastic substrate made of polyphthalamide, nylon, polyetheretherketone (PEEK), polysulfone (PSF), polyetherimide (PEI), polyarylate (PAR), polybutylene terephthalate (PBT), or polyimide, with a diameter of several nm Examples thereof include a substrate formed of an organic material in which inorganic particles are dispersed. Further, the substrate 101 may be flexible. Here, polycarbonate is used as the substrate 101.

The film 102 having oxygen, silicon, and an inert group is formed using a composition of organosilane represented by a chemical formula of Rn—Si—X _(4-n) (n = 1, 2, 3). To do. R of the organic silane represented by the chemical formula of Rn-Si-X _(4-n) (n = 1, 2, 3) is relatively inert such as a fluoroalkyl group, an alkyl group, a fluoroallyl group, an allyl group, etc. It is a basic group. In addition, X is a water that can be bonded to a hydroxyl group on the substrate surface, such as halogen, methoxy group, ethoxy group, propyloxy group, isopropyloxy group, butoxy group, isobutoxy group, s-butoxy group, t-butoxy group, acetoxy group. Consists of a decomposing group.

As an example of an organic silane, a fluoroalkylsilane having a fluoroalkyl group in R (hereinafter referred to as FAS) can be used. R of FAS has a structure represented by (CF ₃ ) (CF ₂ ) _x (CH ₂ ) _y (x: an integer of 0 or more and 10 or less, y: an integer of 0 or more and 4 or less), and a plurality of R Alternatively, when X is bonded to Si, R and X may all be the same or different. Typical FAS includes heptadecafluorotetrahydrodecyltriethoxysilane, heptadecafluorotetrahydrodecyltrichlorosilane, tridecafluorotetrahydrooctyltrichlorosilane, trifluoropropyltrimethoxysilane, and the like.

Further, as an example of an organic silane, alkoxysilane having an alkyl group in R can be used. As alkoxysilane, a C2-C30 alkyl group is preferable. Typical examples include ethyltriethoxysilane, propyltriethoxysilane, octyltriethoxysilane, decyltriethoxysilane, octadecyltriethoxysilane (ODS), eicosyltriethoxysilane, and triacontyltriethoxysilane.

Moreover, as an example of the organic silane, alkoxysilane having an allyl group in R can be used. As the alkoxysilane, an alkoxysilane having an allyl group having 6 to 8 carbon atoms is preferable, and representative examples include phenyltriethoxysilane, benzyltriethoxysilane, phenethyltriethoxysilane, and toluyltriethoxysilane.

In addition, as an example of an organic silane, alkoxysilane having a fluoroallyl group in R can be used. As the alkoxysilane, an alkoxysilane having a fluoroallyl group having 6 to 9 carbon atoms is preferable, and representative examples include pentafluorophenyltriethoxysilane and (pentafluorophenyl) propyltriethoxysilane.

Here, FIG. 17 shows the structure of the surface of a glass substrate when a glass substrate is used as the substrate and the surface is treated with CF ₃ (CF ₂ ) _k CH ₂ CH ₂ Si (OCH ₃ ) ₃ as an example of organosilane. . The glass substrate surface and oxygen are bonded, the oxygen and silicon are bonded, and the silicon and CF ₃ (CF ₂ ) _k CH ₂ CH ₂ which are relatively inert groups are bonded. Further, adjacent silicon is bonded through oxygen.

That is, since the substrate surface is covered with a relatively inert group, the surface energy on the surface is relatively small. In addition, compositions having different surface energies are likely to be repelled on the film. For example, the contact angle with water increases in the order of CF <CF ₂ <CF ₃ , and the surface energy becomes relatively small. Further, the longer the fluorocarbon chain length, the larger the contact angle and the relatively smaller surface energy. As a result, the composition flows on the surface of the film having a small surface energy and remains in a stable shape.

Hereinafter, a film formed by treating the surface of the substrate or member with organosilane is referred to as a film in which silicon and oxygen are bonded and an inactive group is bonded to the silicon.

As the solvent for the organic silane composition, n-pentane, n-hexane, n-heptane, n-octane, n-decane, dicyclopentane, benzene, toluene, xylene, durene, indene, tetrahydronaphthalene, decahydronaphthalene, A hydrocarbon solvent such as squalane or tetrahydrofuran is used.

When the film 102 in which silicon and oxygen are combined and an inactive group is combined with the silicon is formed using the above material, the material is formed by a coating method, a liquid phase method, an evaporation method, or the like. Further, the above material may be formed by chemical adsorption on the surface of the substrate 101. A monomolecular film can be formed by chemical adsorption.

When the film 102 in which silicon and oxygen are bonded and an inert group is bonded to the silicon is formed as a monomolecular film, a part of the film in which silicon and oxygen are bonded and the inert group is bonded to the silicon later is formed. When decomposing, it is possible to decompose in a short time. In addition, since the thickness is uniform, it is possible to decompose a film in which silicon and oxygen are bonded without variation and an inactive group is bonded to the silicon. As a method for forming a monomolecular film, a composition having a substrate and an organic silane is placed in a sealed container, evaporated, and the organic silane is chemically adsorbed on the surface of the insulating film, and then washed with alcohol to obtain oxygen and silicon. And a monomolecular film having an inactive group can be formed. Further, by immersing the substrate in a solution containing organosilane, the organosilane is chemisorbed on the surface of the insulating film to form a monomolecular film, and silicon and oxygen are bonded, and an inert group is bonded to the silicon. It is possible to form a film.

Here, as the film 102 in which silicon and oxygen are bonded and an inert group is bonded to the silicon, a substrate is sealed in a sealed container containing a FAS reagent, and the temperature is 50 to 200 degrees, preferably 100 to 200 degrees. By heating for 5 minutes or more, FAS is adsorbed on the surface of the substrate 101 and formed.

The composition 106 can be appropriately used depending on the structure of the film pattern to be formed. In the case of forming a conductive film pattern, a conductive paste may be used as the composition. As the conductive paste, a conductive paste having a diameter of several nm to several μm dissolved or dispersed in an organic resin is used. The conductive particles include one or more elements of Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, Al, Ta, Mo, Cd, Zn, Fe, Ti, Zr, and Ba. Fine particles, silver halide fine particles, or dispersible nanoparticles can be used. Further, the film pattern 112 can be formed by stacking conductive films made of these materials. In addition, as the organic resin contained in the conductive paste, one or more selected from a binder that aggregates metal particles, a solvent, a dispersant, and an organic resin that functions as a coating agent can be used. Typically, an organic resin such as an epoxy resin or a silicon resin can be given.

In the case of forming an insulating film pattern, an insulating paste may be used as the composition. As the insulating paste, a paste made of insulating particles and a binder can be used. Examples of the insulating particles include silica and alumina.

As the insulating paste, a thermosetting resin, a photocurable resin, or the like can be used. Typically, polyimide, acrylic, novolac resin, melamine resin, phenol resin, epoxy resin, silicon resin, diallyl phthalate resin, vinyl chloride resin, vinyl acetate resin, polyvinyl alcohol, polystyrene, methacrylic resin, polyethylene resin, polypropylene, There are pastes including polycarbonate, polyester, polyamide (nylon) and the like, and resist is also included. Further, PSG (phosphorus glass), BPSG (phosphorus boron glass), silicate-based SOG (Spin on Glass), polysilazane-based SOG, alkoxysilicate-based SOG, polymethylsiloxane, and the like can be given.

Further, as the composition, an anisotropic conductive paste in which conductive particles are dispersed can be used.

Since the composition is printed on a film having a relatively inert group such as a fluoroalkyl group or an alkyl group, oxygen, and silicon, the surface energy of the composition is stabilized. For this reason, the unevenness | corrugation (undulation) of the side surface of a composition is reduced. By drying and baking such a composition, it is possible to form a film pattern with reduced unevenness.

Here, the width of a film pattern when a conductive composition is applied and baked using a screen printing plate having an emulsion provided with openings having different widths will be described with reference to FIG. Here, two types of substrates are used: a glass substrate and a glass substrate having a film in which silicon and oxygen are combined and an inactive group is combined with the silicon. Moreover, Ag paste of Sumitomo Electric Industries, Ltd. product name AGEP-201X (a silver particle, 2- (2-butoxyethoxy) ethyl acetate, an epoxy resin) was used as an electroconductive composition. A screen printing plate having a wire mesh thickness of 14 μm and a wire mesh opening width of 53 μm was used. Further, the width of the opening of the emulsion of the screen printing plate was set every 30 μm from 30 μm to 180 μm.

As a method of manufacturing a glass substrate having a film in which silicon and oxygen are bonded and an inert group is bonded to silicon, a glass substrate and a tray provided with FAS around the glass substrate on a hot plate heated to 170 degrees are used. The tray was sealed and heated for 10 minutes to adsorb FAS onto the surface of the glass substrate. Thereafter, the surface of the glass substrate was washed with ethanol to form a film in which silicon and oxygen having a uniform film thickness were bonded and an inert group was bonded to the silicon.

Next, a screen printing plate was placed at a distance of 1.665 mm from the surface of each substrate. Next, the Ag paste was spread on the screen printing plate using a scraper. The conditions at this time were a scraper pressure of 0.182 MPa and a squeegee stroke speed of 20 mm / sec.

Next, the squeegee was pressed to print the Ag paste on the substrate surface. The squeegee pressure was 0.165 MPa, the squeegee angle was 80 degrees, the squeegee hardness was 80, and the squeegee stroke speed was 8 mm / sec. Then, it heated at 200 degree | times for 30 minutes, Ag paste was baked and the film | membrane pattern was formed.

Tables 1 to 3 show the average values of the widths (actually measured values) of the film patterns formed on the glass substrate having a film in which silicon and oxygen are combined and an inactive group is combined with the silicon. Table 1 shows an average value of widths (actual measurement values) of a film pattern (sample 1) formed using an Ag paste having a viscosity of 40 Pa · s, and Table 2 shows an Ag paste having a viscosity of 200 Pa · s. Table 3 shows the average value of the width (measured value) of the film pattern (sample 2) formed in Table 3, and Table 3 shows the width (actual value) of the film pattern (sample 3) formed using an Ag paste having a viscosity of 400 Pa · s. ) Average value. Moreover, the average value of the width | variety (measured value) of the film | membrane pattern on a glass substrate is shown to Tables 4-6. Table 4 shows an average value of widths (actual measurement values) of a film pattern (comparative sample 1) formed using an Ag paste having a viscosity of 40 Pa · s, and Table 5 shows an Ag paste having a viscosity of 200 Pa · s. The average value of the width (actually measured value) of the film pattern (comparative sample 2) formed using the above is shown. Table 6 shows the film pattern (comparative sample 3) formed using the Ag paste having a viscosity of 400 Pa · s. The average value of the width (actual value) is shown. Moreover, based on Table 1-Table 6, the relationship between the design value of the width of the opening part of the screen printing plate in each board | substrate and the width | variety of a film | membrane pattern is shown in FIG.

In FIG. 16, the horizontal axis represents the design value of the opening width of the screen printing plate, and the vertical axis represents the average value of the film pattern width (measured value). A solid line indicates the width of the film pattern (samples 1 to 3) on the glass substrate on which a film in which silicon and oxygen are bonded and an inert group is bonded to the silicon, and the broken line indicates the glass substrate. The width of the above film pattern (Comparative Samples 1 to 3) is shown. In addition, each circle indicates an average value of the width (measured value) of the film pattern (sample 1 and comparative sample 1) when the viscosity of the Ag paste is 40 Pa · s, and a triangle indicates a viscosity of the Ag paste of 200 Pa · s. The average value of the width (actual measurement value) of the film pattern (sample 2 and comparative sample 2) is shown, and the square marks indicate the width of the film pattern (sample 3 and comparative sample 3) when the viscosity of the Ag paste is 400 Pa · s Average values of (actual measured values) are shown.

As shown in FIG. 16, the film pattern formed on the glass substrate is thicker than the design value of the screen printing plate. On the other hand, a film pattern formed on a film in which silicon and oxygen are bonded and an inert group is bonded to the silicon has a screen printing plate design value of 30 to 80 μm. It was a little thicker compared. Note that the width of the film pattern at this time was narrower than the width of the film pattern formed on the glass substrate. Further, when the design value of the screen printing plate was between 90 and 100 μm, the width was almost the same as the design value of the screen printing plate. Further, when the design value of the screen printing plate was between 110 and 180 μm, it was slightly thinner than the design value of the screen printing plate.

From the above results, the width of the film pattern can be controlled by applying the composition onto the film in which silicon and oxygen are combined and an inactive group is bonded to the silicon by screen printing.

Next, FIG. 18 shows a cross-sectional SEM view (observed from above the front surface) of the film pattern formed using a screen printing plate having an emulsion opening width of 110 μm under the above conditions.

FIG. 18A illustrates a film pattern 1802 formed over a glass substrate 1801 having a film in which silicon and oxygen are combined and an inactive group is combined with the silicon. Note that a film in which silicon and oxygen are combined and an inactive group is combined with the silicon is a monomolecular film, and thus it is difficult to observe with a SEM. The width of the film pattern was 98 μm, and the maximum film thickness was 19 μm. On the other hand, FIG. 18B shows a film pattern 1812 formed on the glass substrate 1811. The width of the film pattern was 148 μm, and the maximum film thickness was 13 μm. From the above figures, when the composition is printed on a glass substrate having oxygen, silicon, and an inert group, a film pattern having a width almost the same as that of the opening and having reduced unevenness on the side surface is formed. Is possible.

Next, the electrical resistance of the conductive film was measured through a film in which silicon and oxygen were bonded and an inert group was bonded to the silicon. The measurement result will be described with reference to FIG.

As shown in FIG. 19A, an aluminum film 1902 having a thickness of 5 μm was formed over a glass substrate 1901 by a sputtering method. Next, after FAS was adsorbed on the aluminum film 1902 by the above method, the film was washed with alcohol to form a film 1903 in which silicon and oxygen were bonded and an inactive group was bonded to the silicon. At this time, the film in which silicon and oxygen are bonded and the inactive group is bonded to the silicon has a very thin film thickness and is difficult to observe with an SEM. Next, on the film 1903 in which silicon and oxygen are combined and an inactive group is combined with the silicon, Ag paste is applied and baked by the above method to form Ag films 1904a and 1904b having a thickness of 5 μm. Sample A was prepared. Further, as shown in FIG. 19B, an aluminum film 1902 having a film thickness of 5 μm is formed on a glass substrate 1901 by a sputtering method, and an Ag paste is applied on the aluminum film by a printing method and baked to form a film having a film thickness of 5 μm. Sample B was prepared by forming the Ag films 1904a and 1904b.

Thereafter, in each of the sample A and the sample B, the electrical resistivity between the Ag films 1904a and 1904b was measured using a tester, and the resistivity of the sample A and the sample B was 0.2Ω. From this result, it was found that the conductive film can be electrically connected through a film in which silicon and oxygen are bonded and an inactive group is bonded to the silicon.

  In this embodiment, a process for forming a conductive film pattern and a semiconductor device having the film pattern using the present invention will be described with reference to FIGS. A semiconductor device such as a wireless chip, a wireless tag, a wireless IC, an RFID, or an IC tag will be described as a semiconductor device. In this embodiment, an explanation will be given using an antenna capable of wirelessly receiving and transmitting data as the conductive film pattern.

3A, 3C, and 3D are cross-sectional views of a substrate having an antenna, and FIGS. 3B and 3E are perspective views of the substrate having an antenna. 3B is a cross-sectional view taken along line AB in FIG. 3B, and FIG. 3D is a cross-sectional view taken along line AB in FIG.

A film 102 in which silicon and oxygen are combined and an inactive group is combined with the silicon is formed over the substrate 101. Next, a composition is applied to the film 102 in which silicon and oxygen are bonded and an inactive group is bonded to the silicon by a screen printing method. Specifically, a screen plate in which a wire mesh (mesh) 104 and a mask emulsion 105 are provided on a frame 103 is provided on a substrate. Next, the conductive composition 306 is provided on the screen printing plate 100, and the conductive composition 306 is extruded using the squeegee 107. As a result, the conductive composition 313 can be applied to the film 102 in which silicon and oxygen are bonded and an inactive group is bonded to the silicon (see FIGS. 3A to 3C).

Here, a glass substrate is used as the substrate 101. Further, the film 102 in which silicon and oxygen are bonded and an inactive group is bonded to the silicon is formed by adsorbing FAS to the substrate surface. For the conductive composition 306, an Ag paste is used.

Next, the applied conductive composition 313 is dried and baked, whereby the coiled antenna 312 can be formed (see FIGS. 3D and 3E).

Through the above steps, an antenna with reduced unevenness on the side surface can be formed. In addition, a substrate having an antenna can be formed. The distance between the conductive films is also uniform. As a result, it is possible to form an antenna with a small electromotive force and a high electromotive force.

Next, a semiconductor device typified by a wireless chip formed using the substrate having the antenna will be described with reference to FIGS.

The semiconductor device of the present invention has a structure in which a plurality of circuits are integrated, and a layer 530 having a plurality of field effect transistors is formed. An antenna is formed on the substrate. Here, a substrate 531 having the film pattern formed in Embodiment 1 as an antenna is shown (see FIG. 4A). The layer 530 having a plurality of field effect transistors has a variety of field effect transistors.

First, a cross-sectional structure of the layer 530 including a plurality of field effect transistors is described. On the single crystal semiconductor substrate 500, field effect transistors 511 and 512 are formed through element isolation regions 506a to 506c. The field effect transistors 511 and 512 can be formed using a known method.

On the other hand, a conductive film connection terminal 312a is formed on the substrate 531 having the antenna 321.

As shown in FIG. 4, a semiconductor device is formed by connecting a conductive layer 541 of a field-effect transistor 511 and a connection terminal 312a. Specifically, a substrate 531 having an antenna and a layer 530 having a plurality of field effect transistors are bonded with an anisotropic conductive adhesive 552. In addition, conductive particles 551 are dispersed in the anisotropic conductive adhesive 552, and function as a connection terminal 312a of the antenna and a source electrode or a drain electrode of the field effect transistor 511 through the conductive particles 551. The conductive layer 541 is connected.

A typical example of the anisotropic conductive adhesive is an adhesive resin containing dispersed conductive particles 551 (particle size is several nm to several tens μm), and examples thereof include an epoxy resin and a phenol resin. In addition, the conductive particles 551 are formed of one element or a plurality of elements selected from gold, silver, copper, palladium, or platinum. Moreover, the particle | grains which have the multilayer structure of these elements may be sufficient. Furthermore, even if it uses the electroconductive particle in which the surface of the particle | grains formed with resin formed the thin film formed with one element or several elements chosen from gold | metal | money, silver, copper, palladium, or platinum. Good.

When the conductive particles 551 have a diameter of 1 to 100 nm, preferably 5 to 50 nm, one or a plurality of conductive particles 551 and the connection terminal 312a are connected. In this case, the interval between the connection terminal 312 a and the conductive layer 541 is maintained by one or a plurality of conductive particles 551.

  As shown in FIG. 4C, an adhesive layer 554 including conductive particles 553 having a diameter of 0.5 to 10 μm, preferably 1 to 5 μm may be used. In this case, the conductive layer 541 and the connection terminal 312a are connected by conductive particles 553 having a shape squeezed in the vertical direction. At this time, the distance between the conductive layer 541 and the connection terminal 312a is maintained by the conductive particles 553.

Instead of the field effect transistor, a layer having a TFT provided over an insulating substrate may be used.

Next, an example in which a circuit is formed using a TFT instead of a single crystal semiconductor substrate and an antenna is connected to the back surface of the TFT will be described with reference to FIGS. Here, the back surface of the TFT refers to the insulating film 703 side where the TFT is formed.

As shown in FIG. 5A, a base 750 is provided over a layer having TFTs 701 and 702 provided over a substrate, a layer having TFTs 701 and 702 is peeled from the substrate, and a substrate having an antenna 321 on the peeled surface. 531 can be attached with an anisotropic conductive adhesive 562 (see FIG. 5A).

Note that here, the conductive film 724 a functioning as a source wiring or a drain wiring of the TFT 701 has a region 724 c filling the openings of the insulating films 723, 722, and 703. Therefore, since the conductive film is exposed in the opening of the insulating film 703, the conductive film functioning as an antenna can be connected to the TFT on the back surface of the TFT. The openings in the insulating films 723, 722, and 703 are formed by etching the insulating films 723 and 722 to expose the source and drain regions 719 a and 719 b and the insulating film 703, and then etching the exposed portions of the insulating film 703. It can be formed by forming.

As the base 750, the substrate 101 or the film described in the embodiment can be used. Films include polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, paper made of fibrous materials, base film (polyester, polyamide, inorganic vapor deposition film, paper, etc.) and adhesive synthetic resin A laminated film with a film (acrylic synthetic resin, epoxy synthetic resin or the like) can be used. Further, thermocompression bonding such as heat treatment or pressure treatment is performed on the film and the object to be processed. When performing the heat treatment and the pressure treatment, the adhesive layer provided on the outermost surface of the film or the layer (not the adhesive layer) provided on the outermost layer is melted by the heat treatment and adhered by the pressure.

Moreover, the adhesive layer may be provided in the surface of the film, and the adhesive layer does not need to be provided. The adhesive layer corresponds to a layer containing an adhesive such as a thermosetting resin, an ultraviolet curable resin, or an epoxy resin adhesive. It is preferable to use a silica coat for the sheet material. For example, a sheet material in which an adhesive layer, a film such as polyester, and a silica coat are laminated can be used.

As a method for peeling the layer having TFTs 701 and 702 from the substrate, (1) a substrate having a heat resistance of about 300 to 500 degrees is used as the substrate, and a metal oxide film is provided between the substrate and the insulating film 703. A method in which the metal oxide film is weakened by crystallization and the layer having the TFTs 701 and 702 is physically peeled off. (2) An amorphous silicon film containing hydrogen is provided between the substrate and the insulating film 703. A method of peeling the layer having the TFTs 701 and 702 by irradiating the laser beam or removing the amorphous silicon film by etching with a gas or a solution; and (3) forming a layer having the TFTs 701 and 702. A method in which the layer having the TFTs 701 and 702 is separated by mechanically removing the etched substrate or etching and removing with a solution; (4) Between the substrate having high heat resistance and the insulating film 703 A release layer and a metal oxide film is formed, the metal oxide film is weakened by crystallization, after removal by etching by a part of the peeling layer solution or CF ₃ and the like of the gas, the physical in the metal oxide film weakening For example, a peeling method may be used.

The anisotropic conductive adhesive 562 is an adhesive in which conductive particles 561 are dispersed in the same manner as the anisotropic conductive adhesive 552. By bonding the layer having the TFTs 701 and 702 to the substrate 531 having a conductive film, the regions 724c and the conductive film can be bonded to each other and the openings of the insulating films 703, 722, and 723 are filled. The connection terminal 321a can be electrically connected through the conductive particles 561.

Further, a substrate 581 having an antenna on the front surface thereof may be bonded together with the back surface of the layer including the TFTs 701 and 702 using an anisotropic conductive adhesive 572 (see FIG. 5B). Typically, a part of the exposed source or drain electrode 724b of the TFT 702 and the connection terminal 121a of the conductive film formed over the substrate 581 having an antenna are electrically connected by anisotropic conductive particles 571. It is possible to connect.

As described above, when the layer having the peeled TFTs 701 and 702 is attached to a flexible substrate or a film, a semiconductor device that is thin, light, and difficult to break even when dropped can be provided. In addition, since the flexible substrate has flexibility, it can be bonded on a curved surface or an irregular shape, and a wide variety of uses can be realized. Further, if the substrate is reused, an inexpensive semiconductor device can be provided.

In addition, in the case where a plurality of antennas are used, even if one antenna is damaged, electromagnetic waves supplied from an external device can be received by another antenna, and thus durability can be improved. In addition, when the frequency bands communicated by a plurality of antennas are different, a plurality of frequency bands can be received, so that the selection range of the reader / writer is widened.

With the above structure, a semiconductor device such as a wireless chip is manufactured.

In this embodiment, a process for forming a conductive film pattern and a semiconductor device having the film pattern using the present invention will be described with reference to FIGS. In this embodiment, description is made using a pixel electrode as a conductive film pattern and a light-emitting display device as a semiconductor device.

  6A is a diagram illustrating a top view of the pixel portion before sealing, and FIG. 6B is a cross-sectional view taken along the chain line AA ′ in FIG. A cross-sectional view taken along −B ′ is FIG.

A film 212 having silicon, oxygen, and an inactive group is formed over the first substrate 210, and a plurality of first electrodes 213 are arranged in stripes on the first substrate 210 at regular intervals. In addition, a partition wall 214 having an opening corresponding to each pixel is provided over the first electrode 213, and the partition wall 214 having an opening portion is formed using a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, Polyimide amide, resist or benzocyclobutene), or SOG film (for example, an SiOx film containing an alkyl group)). Alternatively, a black pigment or carbon black may be dispersed in the above material to form a light-blocking partition wall. By providing light shielding properties in this way, the partition wall 214 having an opening functions as a black matrix (BM). Note that the opening corresponding to each pixel is a light emitting region 221.

  A plurality of reverse-tapered partition walls 222 that are parallel to each other and intersect with the first electrode 213 are provided over the partition wall 214 having an opening. The reverse-tapered partition 222 is formed by using a positive photosensitive resin in which an unexposed portion remains as a pattern according to a photolithography method, and adjusting the exposure amount or development time so that the lower portion of the pattern is etched more. . This inversely tapered partition 222 may also be formed of the above-described light-shielding material to further improve the contrast.

The height of the inversely tapered partition 222 is set to be larger than the thicknesses of the layers 215R, 215G, and 215B containing the organic compound and the second electrode 216, so that the layers 215R, 215G, and 215B containing the respective organic compounds The second electrode 216 is formed electrically independently. The second electrode 216 is a striped electrode parallel to each other and extending in a direction intersecting the first electrode 213. Note that a film containing an organic compound and a conductive film are also formed over the inversely tapered partition 222.

Here, an example is shown in which the layers 215R, 215G, and 215B containing an organic compound are selectively formed to form a light-emitting device capable of full-color display capable of obtaining three types (R, G, and B) of light emission. The layers 215R, 215G, and 215B containing the organic compound are formed in a stripe pattern parallel to each other.

Alternatively, a layer containing an organic compound may be formed over the entire surface and a single color light emitting element may be provided, or a light emitting device capable of monochrome display or a light emitting device capable of area color display may be used. Alternatively, a light-emitting device that can emit white light may be a light-emitting device capable of full-color display by being combined with a color filter. Since the partition wall 214 is formed using a light-blocking material and functions as a black matrix, a color filter including only a colored layer can be used.

In addition, the light-emitting element is sealed by bonding the second substrate with a sealant. If necessary, a protective film covering the second electrode 216 may be formed. Note that the second substrate is preferably a substrate having a high barrier property against moisture. Further, if necessary, a desiccant may be disposed in a region surrounded by the sealing material.

In the case where the first electrode 213 is a light-reflective conductive material and the second electrode 216 is a light-transmitting conductive material, light emitted from the light-emitting element is allowed to pass through the second substrate. A top emission type light emitting device can be obtained. When an aluminum alloy film containing carbon and nickel is used as the first electrode 213 on the lower layer side of a single layer or a laminate with a transparent conductive film, ITO containing ITO or silicon oxide by energization or heat treatment, and carbon and This is preferable because there is no great variation in the contact resistance value with the aluminum alloy film containing nickel.

In the case where the first electrode 213 is a light-transmitting conductive material and the second electrode 216 is a light-reflecting conductive material, light emitted from the light-emitting element passes through the first substrate 210. Thus, a bottom emission type light emitting device can be obtained.

In the case where both the first electrode 213 and the second electrode 216 are light-transmitting conductive materials, light emitted from the light-emitting element is transmitted through both the first substrate and the second substrate. A light-emitting device capable of performing both can be obtained.

Next, a method for manufacturing the display device illustrated in FIG. 6 will be described with reference to FIGS.

The manufacturing process of the region illustrated in FIG. 6B is illustrated in FIGS. 7A, 7C, 7E, and 7G, and the manufacturing process of the region illustrated in FIG. 6C is illustrated in FIG. , (D), (F), and (H).

A film 212 in which silicon and oxygen are bonded to each other and an inert group is bonded to the silicon is formed on the substrate 210, and a composition containing zinc oxide and indium oxide is applied by a screen printing method, followed by drying and baking. A stripe-shaped first electrode 213 is formed (see FIGS. 7A and 7B).

Next, a partition wall 214 having an opening corresponding to each pixel is formed over the first electrode 213. The partition wall can be formed by a known method such as a screen printing method, a coating method, or an etching method using the above-described material. Here, a photosensitive or non-photosensitive organic material in which a black pigment or carbon black is dispersed is printed, dried and baked to form the partition wall 214 having an opening.

Next, a plurality of reverse-tapered partition walls 222 that intersect with the first electrode 213 and are parallel to each other are formed over the partition wall 214 having openings. Here, a positive type photosensitive resin is applied, dried and baked, then exposed in accordance with a photolithography method and developed to form a reverse-tapered partition wall formed in an unexposed portion. At this time, the reverse taper shape can be obtained by adjusting the exposure amount or the development time so that the lower part of the partition wall is etched more. The reverse-tapered partition 222 is also formed using the above-described light-shielding material, so that contrast can be further improved (see FIGS. 7C and 7D).

Next, layers 215R, 215G, and 215B containing an organic compound are selectively formed. The layers 215R, 215G, and 215B containing an organic compound are formed in stripe patterns parallel to each other. As a result, a light-emitting device capable of full-color display from which three types (R, G, and B) of light emission can be obtained can be formed (see FIGS. 7E and 7F).

Next, the second electrode 216 is formed. Note that as the second electrode, a reflective conductive layer is formed by a known method such as a sputtering method or an evaporation method. Note that here, each pixel portion is divided by a partition wall 222 having a reverse taper. Therefore, the formation of the layers 215R, 215G, and 215B containing the organic compound and the second electrode 216 is hindered by the head portion of the reverse-tapered partition wall 222. Therefore, the layer containing the organic compound and the second electrode can be separated for each inversely tapered partition 222 without using a known photolithography process.

After that, the display device can be formed by sealing the substrate 210 with a counter substrate. FIG. 13 shows a top view of a display device in which an FPC or the like is mounted after sealing.

Note that a display device in this specification is a module in which a connector such as an FPC (Flexible Printed Circuit), a TAB (Tape Automated Bonding) tape, or a TCP (Tape Carrier Package) is attached to the display device, or a TAB tape or TCP. It is assumed that the display device includes all modules that are provided with a printed wiring board in advance, or modules in which an IC (integrated circuit) is directly mounted on a display element by a COG (Chip On Glass) method.

  A substrate 1301 and a counter substrate 1310 are attached with a sealant 1311 so as to face each other. As the sealant 1311, a photo-curing resin may be used, and a material with low degassing and low hygroscopicity is preferable. Further, the sealant 1311 may be added with a filler (a rod-like or fiber-like spacer) or a spherical spacer in order to keep the substrate interval constant. Note that the counter substrate 1310 is preferably made of a material having the same thermal expansion coefficient as that of the substrate 1301, and glass (including quartz glass) or plastic can be used.

As shown in FIG. 13, in the pixel portion constituting the image display, the scanning line group and the data line group intersect so as to be orthogonal to each other.

The first electrode 213 in FIG. 6 corresponds to the data line 1303 in FIG. 13, the second electrode 216 corresponds to the scanning line 1302, and the reverse-tapered partition 222 corresponds to the partition 1304. A layer containing an organic compound is sandwiched between the data line 1303 and the scanning line 1302, and an intersection indicated by 1305 corresponds to one pixel.

Note that the data line 1303 is electrically connected to the input terminal 1307 at a wiring end, and is connected to the FPC 1309b through the input terminal 1307. Further, the scanning line 1302 is connected to the FPC 1309 a through the input terminal 1306.

Further, if necessary, an optical film such as a polarizing plate or a circular polarizing plate (including an elliptical polarizing plate), a retardation plate (λ / 4 plate, λ / 2 plate), a color filter, etc. is appropriately provided on the exit surface. Also good. Further, an antireflection film may be provided on the polarizing plate or the circularly polarizing plate. For example, anti-glare treatment that diffuses reflected light due to surface irregularities and can reduce reflection can be performed. Moreover, you may perform the anti-reflection process which heat-processes to a polarizing plate or a circularly-polarizing plate. Thereafter, in order to protect from external impact, a hard coat treatment may be performed. However, when a polarizing plate or a circularly polarizing plate is used, the light extraction efficiency decreases due to the polarizing plate or the circularly polarizing plate. In addition, the cost of the polarizing plate or the circularly polarizing plate itself is high and easily deteriorates.

Through the above steps, a pixel electrode and a light-emitting display device can be formed.

In this embodiment, a method for manufacturing a semiconductor device having a conductive film connected to a TFT will be described with reference to FIGS. A layer having a plurality of transistors is provided over the substrate 700. These TFTs can be configured by appropriately combining p-channel TFTs, n-channel TFTs, and the like. Here, the TFT is an n-channel TFT.

The TFTs 701 and 702 are provided on an insulating film 703 formed on the substrate 700. In addition, an insulating film 723 is provided so as to cover the TFTs 701 and 702 and the insulating film 722 functioning as a passivation film, and these insulating films 723 are provided to planarize the surface. The conductive films 724a and 724b functioning as the source wiring and the drain wiring are in contact with the source and drain regions 719a and 719b and fill a contact hole provided in the insulating film 723.

In addition, insulating films 726 and 727 are provided so as to cover the conductive films 724a and 724b. These insulating films 726 and 727 are provided for the purpose of flattening the surface and protecting the TFTs 701 and 702 and the conductive films 724a and 724b.

After the insulating films 726 and 727 are formed, partial openings are provided in the insulating films 726 and 727 to expose the conductive film 724a. Next, a film 728 in which silicon and oxygen are bonded and an inactive group is bonded to the silicon is formed. Here, the film 728 in which silicon and oxygen are combined and an inactive group is combined with the silicon is similar to the film 102 in which silicon and oxygen are combined and an inactive group is combined with the silicon described in the embodiment. These substances can be used as appropriate (see FIG. 8A).

Next, a conductive composition is applied to the film 728 in which silicon and oxygen formed over the opening are bonded and an inactive group is bonded to the silicon by a screen printing method. As a result, a conductive composition 731 having a desired shape is applied onto the film 728 in which silicon and oxygen are bonded and an inactive group is bonded to the silicon. As the conductive composition, any of the conductive compositions described in Embodiments can be used as appropriate (see FIG. 8B).

Next, the conductive film 741 connected to the TFT can be formed by drying and baking the conductive composition having a desired shape through the above steps. Note that the conductive film 741 functions as a connection terminal, a wiring, or an antenna.

In this embodiment, a method for manufacturing a semiconductor device having a conductive film connected to a TFT will be described with reference to FIGS. Here, a pixel electrode is formed as a conductive film formed by a screen printing method, and a liquid crystal display device is formed as a semiconductor device.

  As in Embodiment 4, the TFT 701 and insulating films 722 and 723 that cover the TFT 701 are formed over the substrate 700. Next, after part of the insulating films 722 and 723 are etched to provide openings, a conductive film 724a connected to the source and drain regions 719a is formed.

Next, a film 751 in which silicon and oxygen are bonded and an inactive group is bonded to the silicon is formed over the insulating film 723 and the conductive film 724a.

Next, the first pixel electrode 752 is printed by a screen printing method over the film 751 having silicon, oxygen, and an inert group as in Embodiment 1 (see FIG. 9B).

The pixel electrode is printed using a composition containing indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), zinc oxide added with gallium (GZO), indium tin oxide containing silicon oxide, and the like. Then, baking can be performed to form a pixel electrode having translucency. By using such a pixel electrode, a transmissive liquid crystal display device can be manufactured.

Also, printing is performed using a composition containing metal particles such as Ag (silver), Au (gold), Cu (copper)), W (tungsten), and Al (aluminum) as a main component, firing, and reflection. A pixel electrode having characteristics can be formed. By using such a pixel electrode, a reflective liquid crystal display device can be manufactured.

Furthermore, a transflective liquid crystal display device can be manufactured by providing the pixel electrode having a light-transmitting property and the pixel electrode having a reflective property for each pixel.

  Through the above steps, an active matrix substrate can be formed.

  Next, an insulating film is formed by a printing method or a spin coating method, and rubbing is performed to form an alignment film 753. Note that the alignment film 753 can also be formed by an oblique evaporation method.

  Next, although not illustrated, in the counter substrate 761 provided with the alignment film 764, the second pixel electrode (counter electrode) 763, and the coloring layer 762, a closed loop shape is formed in a region around the pixel portion by a droplet discharge method. A sealing material is formed. A filler may be mixed in the sealing material, and a color filter, a shielding film (black matrix), or the like may be formed on the counter substrate 761.

  Next, after the liquid crystal material is dropped inside the closed loop formed of the sealing material by a dispenser type (dropping type), the counter substrate and the active matrix substrate are bonded together in a vacuum, and ultraviolet curing is performed, thereby liquid crystal A liquid crystal layer 765 filled with the material is formed. Note that as a method for forming the liquid crystal layer 765, a dip method (pumping method) in which a liquid crystal material is injected using a capillary phenomenon after the counter substrate is attached can be used instead of the dispenser method (dropping method).

  After that, a wiring board, typically an FPC (Flexible Print Crucite) is attached to the connection terminal portions of the scanning lines and the signal lines through the connection conductive layer. Through the above steps, a liquid crystal display device can be formed.

Note that a protection circuit for preventing electrostatic breakdown, typically a diode or the like, may be provided between the connection terminal and the source wiring (gate wiring) or in the pixel portion. In this case, it is possible to prevent electrostatic breakdown by manufacturing in the same process as the above TFT and connecting the gate wiring layer of the pixel portion and the drain or source wiring layer of the diode.

In this embodiment, a method for manufacturing a semiconductor device will be described with reference to drawings.

An insulating film 1001 and separation layers 1102a and 1102b are formed over one surface of the substrate 1100 (see FIG. 10A).

As the substrate 1100, a glass substrate, a quartz substrate, a metal substrate, a stainless steel substrate with an insulating film formed on one surface, or the like is used. Since there is no restriction on the size or shape of the substrate 1100 listed above, for example, if a substrate having a side of 1 meter or more and a rectangular shape is used as the substrate 1100, productivity is remarkably improved. Can do. This advantage is a great advantage compared to the case of using a circular silicon substrate.

The separation layers 1102a and 1102b are formed by forming an insulating film 1001 over one surface of a substrate 1100, forming a resist mask by a photolithography method, and selectively etching a conductive layer using the resist. The release layers 1102a and 1102b are formed by a known method (sputtering method, plasma CVD method, or the like) with tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni). Selected from cobalt, cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), and silicon (Si) Alternatively, a single layer or a layer formed of an alloy material containing the element as a main component or a compound material containing the element as a main component is formed. The crystal structure of the layer containing silicon may be any of amorphous, microcrystalline, and polycrystalline.

In the case where the separation layers 1102a and 1102b have a single-layer structure, a tungsten layer, a molybdenum layer, or a layer containing a mixture of tungsten and molybdenum is preferably formed. Alternatively, a layer containing tungsten oxide or oxynitride, a layer containing molybdenum oxide or oxynitride, or a layer containing an oxide or oxynitride of a mixture of tungsten and molybdenum is formed. Note that the mixture of tungsten and molybdenum includes, for example, an alloy of tungsten and molybdenum.

In the case where the separation layers 1102a and 1102b have a stacked structure, a tungsten layer, a molybdenum layer, or a layer containing a mixture of tungsten and molybdenum is formed as a first layer, and oxidation of tungsten, molybdenum, or a mixture of tungsten and molybdenum is formed as a second layer It is preferable to form a layer containing an oxide, nitride, oxynitride, or nitride oxide.

As the peeling layers 1102a and 1102b, in the case of forming a stacked structure of a layer containing tungsten and a layer containing tungsten oxide, a layer containing tungsten is formed, and a layer containing silicon oxide is formed thereon, The fact that a layer containing an oxide of tungsten is formed at the interface between the tungsten layer and the silicon oxide layer may be utilized. Further, the surface of the layer containing tungsten is subjected to thermal oxidation treatment, oxygen plasma treatment, N ₂ O plasma treatment, treatment with a solution having strong oxidizing power such as ozone water, and the like to form a layer containing tungsten oxide. May be. The same applies to the case where a layer containing tungsten nitride, oxynitride, and nitride oxide is formed. After a layer containing tungsten is formed, a silicon nitride layer, a silicon oxynitride layer, and a silicon nitride oxide layer are formed thereon. A layer may be formed.

The oxide of tungsten is represented by WOx. X is in the range of 2 ≦ x ≦ 3, when x is 2 (WO ₂ ), when x is 2.5 (W ₂ O ₅ ), when x is 2.75 (W ₄ O ₁₁ ) And x is 3 (WO ₃ ).

Further, according to the above process, the insulating film 1001 is provided between the substrate 1100 and the separation layers 1102a and 1102b; however, the present invention is not limited to this process. The separation layers 1102a and 1102b may be formed so as to be in contact with the substrate 1100.

Here, a glass substrate is used as the substrate 1100, a silicon oxynitride film with a thickness of 100 nm is formed as the insulating film 1101 by a CVD method, and a tungsten layer with a thickness of 30 nm is formed as the separation layers 1102a and 1102b by a sputtering method.

Next, as illustrated in FIG. 10B, an insulating film 1105 serving as a base is formed so as to cover the separation layers 1102a and 1102b. The insulating film 1105 is formed with a single layer or a stacked layer using a known method (a sputtering method, a plasma CVD method, or the like) as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film. The insulating film serving as a base functions as a blocking film that prevents impurities from entering from the substrate 1100.

Here, a 200-nm-thick silicon oxide film is formed as the base insulating film 1105 by a sputtering method.

Next, an amorphous semiconductor film (eg, a film containing amorphous silicon) is formed over the insulating film 1105. Subsequently, a known crystallization method (laser crystallization method, thermal crystallization method using an RTA or furnace annealing furnace, thermal crystallization method using a metal element that promotes crystallization, and crystallization are promoted. A crystalline semiconductor film is formed by crystallization by a combination of a thermal crystallization method using a metal element to be combined and a laser crystallization method). After that, the obtained crystalline semiconductor film is etched into a desired shape to form crystalline semiconductor films 1127 to 1130.

As a specific example of a manufacturing process of the crystalline semiconductor films 1127 to 1130, first, an amorphous semiconductor film having a thickness of 66 nm is formed by a plasma CVD method. Next, after a solution containing nickel, which is a metal element that promotes crystallization, is held on the amorphous semiconductor film, the amorphous semiconductor film is subjected to dehydrogenation treatment (500 ° C., 1 hour), heat Crystallization treatment (550 ° C., 4 hours) is performed to form a crystalline semiconductor film. Thereafter, continuous or pulsed laser light is irradiated as necessary, and the crystalline semiconductor film 1127 to 1130 is formed by selectively etching the crystalline semiconductor film using a resist mask formed by a photolithography method. .

In addition, an amorphous semiconductor film functioning as a gettering site may be formed over the crystalline semiconductor film. Since the amorphous semiconductor film serving as a gettering site needs to contain an impurity element such as phosphorus or argon, it is preferably formed by a sputtering method that can contain argon at a high concentration. Then, heat treatment (RTA method or thermal annealing using a furnace annealing furnace) is performed to diffuse the metal element in the amorphous semiconductor film, and then the amorphous semiconductor film containing the metal element is removed. To do. Then, the content of the metal element in the crystalline semiconductor film can be reduced or removed.

Next, an insulating film covering the crystalline semiconductor films 1127 to 1130 is formed. The insulating film is formed by a single layer or a stacked layer of a silicon oxide film, a silicon nitride film, or a silicon oxynitride film by a plasma CVD method or a sputtering method.

Here, as the insulating film, a silicon oxynitride film is formed by a CVD method.

Next, a first conductive film and a second conductive film are stacked over the insulating film. The first conductive film is formed with a thickness of 20 to 100 nm by a known means (plasma CVD method or sputtering method). The second conductive film is formed with a thickness of 100 to 400 nm by a known means. The first conductive film and the second conductive film include tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), niobium ( Nb) or the like or an alloy material or a compound material containing these elements as a main component. Alternatively, a semiconductor material typified by polycrystalline silicon doped with an impurity element such as phosphorus is used.

Examples of combinations of the first conductive film and the second conductive film include a tantalum nitride (TaN) layer and a tungsten (W) layer, a tungsten nitride (WN) layer and a tungsten layer, and a molybdenum nitride (MoN) layer. A molybdenum (Mo) layer etc. are mentioned. Since tungsten and tantalum nitride have high heat resistance, heat treatment for thermal activation can be performed after the first conductive film and the second conductive film are formed.

Here, a tantalum nitride layer with a thickness of 30 nm is formed as the first conductive film, and a tungsten layer with a thickness of 370 nm is formed as the second conductive film.

Next, a resist mask is formed using a photolithography method, etching treatment for forming a gate electrode is performed, and conductive films (also referred to as gate electrodes) 1107 to 1110 functioning as gate electrodes are formed. Form.

Next, an impurity element imparting n-type conductivity is added to the crystalline semiconductor films 1127 to 1130 at a low concentration by ion doping or ion implantation to form an n-type impurity region and a p-type impurity region. .

Next, an insulating film is formed so as to cover the insulating film and the conductive films 1107 to 1110. The insulating film is formed by a known means (plasma CVD method or sputtering method) such as a film containing an inorganic material of silicon, silicon oxide or silicon nitride (sometimes referred to as an inorganic film), or an organic resin. A film containing an organic material (sometimes referred to as an organic film) is formed as a single layer or a stacked layer.

Here, a silicon oxynitride film is formed as the insulating film by a CVD method.

Next, the insulating film is selectively etched by anisotropic etching mainly in the vertical direction to form insulating films (hereinafter referred to as sidewall insulating films) 1115 to 1118 in contact with the side surfaces of the conductive films 1107 to 1110. Form. The sidewall insulating films 1115 to 1118 are used as a doping mask for forming a source region and a drain region later.

Note that the insulating film is also etched by the etching step for forming the sidewall insulating films 1115 to 1118 to form gate insulating films 1119 to 1122. The gate insulating films 1119 to 1122 overlap with the conductive films 1107 to 1110 and the sidewall insulating films 1115 to 1118. In this manner, the gate insulating film is etched because the etching rates of the materials of the gate insulating film and the sidewall insulating films 1115 to 1118 are the same, and FIG. 10B shows such a case. Yes. Therefore, when the gate insulating film and the sidewall insulating films 1115 to 1118 have different etching rates, the gate insulating film may remain even after an etching process for forming the sidewall insulating films 1115 to 1118. is there.

Subsequently, an impurity element imparting n-type conductivity is added to the crystalline semiconductor films 1127 and 1129 using the sidewall insulating films 1115 and 1117 as masks, and a first n-type impurity region (also referred to as an LDD region). 1123a and 1123c and second n-type impurity regions (also referred to as source and drain regions) 1124a and 1124c are formed.

Further, an impurity element imparting p-type conductivity is added to the crystalline semiconductor films 1128 and 1130 so that first p-type impurity regions (also referred to as LDD regions) 1123b and 1123d and second p-type impurity regions 1124b and 1124d (also referred to as a source region and a drain region) are formed.

The concentration of the impurity element contained in the first n-type impurity regions 1123a and 1123c is lower than the concentration of the impurity element in the second n-type impurity regions 1124a and 1124c. The concentration of the impurity element contained in the first p-type impurity regions 1123b and 1123d is lower than the concentration of the impurity element in the second p-type impurity regions 1124b and 1124d.

Through the above steps, n-type thin film transistors 1131 and 1133 are completed. In addition, p-type thin film transistors 1132 and 1134 are completed.

The n-type thin film transistors 1131 and 1133 each have an LDD structure and function as an active layer including a first n-type impurity region, a second n-type impurity region, and a channel formation region, a gate insulating film, and a gate electrode. A conductive film. The p-type thin film transistors 1132 and 1134 each have an LDD structure, and include an active layer including a first n-type impurity region, a second n-type impurity region, and a channel formation region, a gate insulating film, and a gate electrode. A functional conductive film.

Next, an insulating film is formed as a single layer or a stacked layer so as to cover the thin film transistors 1131 to 1134. Here, a case where two insulating films are stacked so as to cover the thin film transistors 1131 to 1134 is shown, and a film containing silicon oxynitride with a thickness of 50 nm is formed as the first insulating film 1141, and two layers are formed. A film containing silicon oxide with a thickness of 600 nm is formed as the insulating film 1142 for the eyes.

Note that before the insulating films 1141 and 1142 are formed or after one or more thin films of the insulating films 1141 and 1142 are formed, the crystallinity of the semiconductor film is restored and the activity of the impurity element added to the semiconductor film is increased. Heat treatment for the purpose of hydrogenation of the semiconductor film is preferably performed. For the heat treatment, thermal annealing, laser annealing, RTA, or the like is preferably applied.

Next, the insulating films 1141 and 1142 are etched by photolithography to form contact holes that expose the n-type impurity regions 1124a and 1124c and the p-type impurity regions 1124b and 1124d (see FIG. 10C).

Next, a conductive film is formed so as to fill the contact hole, and the conductive film is patterned to form conductive films 1155 to 1162. The conductive films 1155 to 1162 function as a source wiring or a drain wiring of the TFT.

The conductive films 1155 to 1162 are formed of an element selected from titanium (Ti), aluminum (Al), and neodymium (Nd) by known means (plasma CVD method or sputtering method), or an alloy containing these elements as a main component. The material or compound material is formed as a single layer or a stacked layer. The alloy material containing aluminum as a main component corresponds to, for example, a material containing aluminum as a main component and containing nickel, or an alloy material containing aluminum as a main component and containing nickel and one or both of carbon and silicon.

Here, as the conductive films 1155 to 1162, a titanium layer having a thickness of 60 nm, a 40 nm titanium nitride layer, a 500 nm aluminum layer, a 60 nm titanium layer, and a 40 nm titanium nitride layer are sequentially formed from the insulating film 1142 side by a sputtering method. Form.

Next, an insulating film 1163 is formed as a single layer or a stacked layer so as to cover the conductive films 1155 to 1162 (see FIG. 10D). Here, the insulating film 1163 covering the conductive films 1155 to 1162 is formed using an inorganic insulating film. As the inorganic insulating film, a siloxane polymer with a thickness of 1.5 μm is applied, dried and baked to form the insulating film 1163.

Next, a contact hole is formed in the insulating film 1163 covering the conductive films 1155 to 1162 in the same manner as the insulating film 1142 covering the thin film transistor, and then a film 1164 in which silicon and oxygen are bonded and an inactive group is bonded to the silicon. Form. Here, FAS is chemically adsorbed on the insulating film 1163 to form a film 1164 in which silicon and oxygen which are formed of a single molecule are bonded and an inactive group is bonded to the silicon.

Next, after a conductive composition is printed by a screen printing method on the film 1164 in which silicon and oxygen are bonded and an inactive group is bonded to the silicon, drying and baking are performed to obtain a thickness of 5 to 5. A 40 μm conductive film 1165 is formed. The conductive film 1165 functions as part of the antenna.

Here, an Ag paste is used for the conductive film 1165. Through the above steps, the conductive film 1165 functioning as an antenna connected to the TFT can be formed.

Thereafter, a film containing carbon such as DLC (diamond-like carbon), silicon nitride, and the like are formed over the film 1164 in which silicon and oxygen are bonded and an inactive group is bonded to silicon and the conductive film 1165 functioning as an antenna. A protective film such as a film or a film containing silicon nitride oxide may be formed.

Next, an insulating film 1181 is formed over the film 1164 and the conductive film 1165 in which silicon and oxygen are combined and an inactive group is combined with the silicon. The insulating film 1181 is preferably a planarization film because it is provided as a protective film in a subsequent peeling step (see FIG. 10E).

Here, as the insulating film 1181, an epoxy resin layer having a thickness of 15 μm is formed by a screen printing method. Note that a layer stacked from the insulating film 1105 to the insulating film 1181 is hereinafter referred to as a layer 1170 including a plurality of thin film transistors.

Next, an opening 1182 is formed so that the peeling layers 1102a and 1102b are exposed. The opening 1182 is formed by removing part of the insulating films 1105, 1141, 1142, 1163, and 1181 by a laser ablation method or a photolithography method.

Here, the opening 1182 is formed by irradiation with a laser beam emitted from an ultraviolet laser (see FIG. 11A).

Next, an etchant is introduced into the opening 1182 to remove part of the separation layers 1102a and 1102b (see FIG. 11B). Partially etched release layers are denoted as remaining release layers 1183 and 1184. If wet etching is used as the etchant, a mixture of hydrofluoric acid diluted with water or ammonium fluoride, a mixture of hydrofluoric acid and nitric acid, a mixture of hydrofluoric acid, nitric acid and acetic acid, a mixture of hydrogen peroxide and sulfuric acid A mixed solution of hydrogen peroxide, ammonia water and water, a mixed solution of hydrogen peroxide, hydrochloric acid and water, or the like is used. In the case of dry etching, a gas containing a halogen atom or molecule such as fluorine or a gas containing oxygen is used. Preferably, a gas or liquid containing halogen fluoride or a halogen compound is used as the etching agent.

Here, a part of the peeling layer is etched using chlorine trifluoride (ClF ₃ ). The remaining release layers are denoted by 1183 and 1184.

Next, in the layer 1170 having a plurality of transistors, the surface of the insulating film 1181 and the base 1186 are bonded to each other with an adhesive 1185, and the substrate 1100 and the peeling layers 1102a and 1102b are peeled off (see FIG. 11C). .

Here, a transfer roller provided with a low-adhesive film is used as a base 1186, and the roller is rotated while pressing the adhesive 1185 against the insulating film 1181, thereby having a plurality of transistors provided over the insulating film 1105. Only layer 1170 is transposed. Such a transfer roller can be formed of a silicon-based resin or a fluorine-based resin.

At this time, the adhesive strength between the base 1186 and the layer 1170 including a plurality of transistors is set to be higher than the adhesion strength between the substrate 1100 and the insulating film 1105. Then, only the layer including a plurality of transistors provided over the insulating film 1105 is separated from the substrate.

Next, the base 1186 is peeled from the layer 1170 including a plurality of transistors.

Next, the film 1191 is attached to the insulating film 1105 (see FIG. 12A). As the film 1191, the base 750 disclosed in Example 2 can be used as appropriate. Here, when a sheet material obtained by laminating an adhesive layer, a PET film, and a silica coat is used as the film 1191, it is possible to prevent moisture and the like from entering the inside after sealing.

Next, the adhesive 1185 is removed from the insulating film 1181 (see FIG. 12B).

Here, the adhesive 1185 is removed by irradiating the adhesive 1185 with ultraviolet rays.

Next, the film 1192 is attached to the surface of the layer 1170 including a plurality of transistors and the film 1191, so that the layer 1170 including a plurality of transistors is sealed (see FIG. 12C). As the film 1192, a material similar to the film 1191 can be used as appropriate.

Here, a sheet material in which an adhesive layer, a PET film, and a silica coat are stacked is used as the film 1192 as the film 1192.

After that, the layers having a plurality of transistors are individually cut in the bonding regions of the films 1191 and 1192. As a result, a wireless chip can be formed.

In this embodiment, a structure of a semiconductor device typified by a wireless chip is described with reference to FIG. As shown in FIG. 14, the semiconductor device 20 of the present invention has a function of communicating data without contact, and controls the power supply circuit 11, the clock generation circuit 12, the data demodulation / modulation circuit 13, and other circuits. A circuit 14, an interface circuit 15, a memory circuit 16, a data bus 17, an antenna (antenna coil) 18, a sensor 21, and a sensor circuit 22 are included.

The power supply circuit 11 is a circuit that generates various power supplies to be supplied to each circuit inside the semiconductor device 20 based on the AC signal input from the antenna 18. The clock generation circuit 12 is a circuit that generates various clock signals to be supplied to each circuit inside the semiconductor device 20 based on the AC signal input from the antenna 18. The data demodulation / modulation circuit 13 has a function of demodulating / modulating data communicated with the reader / writer 19. The control circuit 14 has a function of controlling the memory circuit 16. The antenna 18 has a function of transmitting and receiving an electromagnetic field or a radio wave. The reader / writer 19 controls communication and control with the semiconductor device and processing related to the data. The semiconductor device is not limited to the above-described configuration, and may be a configuration in which other elements such as a power supply voltage limiter circuit and hardware dedicated to cryptographic processing are added.

The memory circuit 16 includes a memory element in which an organic compound layer or a phase change layer is sandwiched between a pair of conductive films. Note that the memory circuit 16 may include only a memory element in which an organic compound layer or a phase change layer is sandwiched between a pair of conductive films, or may include a memory circuit having another structure. The memory circuit having another configuration corresponds to, for example, one or more selected from DRAM, SRAM, FeRAM, mask ROM, PROM, EPROM, EEPROM, and flash memory.

The sensor 21 is formed of an element such as a resistance element, a capacitive coupling element, an inductive coupling element, a photovoltaic element, a photoelectric conversion element, a thermoelectric element, a transistor, a thermistor, or a diode. The sensor circuit 22 detects a change in impedance, reactance, inductance, voltage or current, performs analog / digital conversion (A / D conversion), and outputs a signal to the control circuit 14.

According to the present invention, a semiconductor device functioning as a wireless chip can be formed. Although semiconductor devices have a wide range of uses, for example, banknotes, coins, securities, bearer bonds, certificates (driver's license, resident's card, etc., see FIG. 15A), packaging containers (wrapping paper, Bottle, etc., see FIG. 15C), recording medium (DVD software, video tape, etc., see FIG. 15B), vehicles (bicycle, etc., see FIG. 15D), personal items (bags, glasses, etc.) ), Goods such as foods, clothes, daily necessities, electronic devices, etc., and goods such as luggage tags (see FIGS. 15E and 15F) can be used. Electronic devices refer to liquid crystal display devices, EL display devices, television devices (also simply referred to as televisions, television receivers, television receivers), mobile phones, and the like. Moreover, it can be used for plants, animals, human bodies and the like.

The semiconductor device is fixed to the article by being attached to the surface of the article or embedded in the article. For example, a book may be embedded in paper, and a package made of an organic resin may be embedded in the organic resin. Forgery can be prevented by providing wireless chips on banknotes, coins, securities, bearer bonds, certificates, etc. In addition, by providing wireless chips in packaging containers, recording media, personal items, foods, clothing, daily necessities, electronic devices, etc., it is possible to improve the efficiency of inspection systems and rental store systems. The wireless chip that can be formed according to the present invention is small, thin, and lightweight because it is provided on a cover material after a thin film integrated circuit formed over a substrate is peeled off by a known peeling process, and is mounted on an article. However, the design is not impaired. Furthermore, since it has flexibility, it can be used for a bottle or pipe having a curved surface.

Further, by applying a semiconductor device that can be formed according to the present invention to an object management or distribution system, it is possible to increase the functionality of the system. For example, by reading the information recorded on the semiconductor device provided on the packing slip with a reader / writer provided on the side of the belt conveyor, information such as the distribution process and delivery destination is read, and inspection of goods and distribution of goods Can be done easily.

It is sectional drawing and the perspective view which showed the process of forming the film | membrane pattern of this invention. It is sectional drawing and the perspective view which showed the process of forming the film | membrane pattern of this invention. It is sectional drawing and the perspective view which showed the process of forming the antenna of this invention. It is sectional drawing which showed the structure of the semiconductor device of this invention. It is sectional drawing which showed the structure of the semiconductor device of this invention. It is the top view and sectional drawing which showed the structure of the semiconductor device of this invention. It is sectional drawing which showed the process of producing the semiconductor device of this invention. It is sectional drawing which showed the process of producing the semiconductor device of this invention. It is sectional drawing which showed the process of producing the semiconductor device of this invention. It is sectional drawing which showed the process of producing the semiconductor device of this invention. It is sectional drawing which showed the process of producing the semiconductor device of this invention. It is sectional drawing which showed the process of producing the semiconductor device of this invention. It is the top view which showed the structure of the semiconductor device of this invention. It is the figure which showed the structure of the semiconductor device of this invention. It is a figure which shows the example of application of the semiconductor device of this invention. It is a figure which shows the relationship between the design value of the width of the opening part of a screen printing plate, and the average value of the width | variety of a film | membrane pattern. It is the figure which showed the surface structure of the modified glass substrate. It is the figure which showed the film | membrane pattern cross-section SEM figure. It is the figure which showed the structure of the element which measures the resistivity of a film | membrane pattern.

Claims (21)

A film having a film in which silicon and oxygen are bonded to each other and an inactive group is bonded to the silicon, and a film pattern formed on the film having the oxygen, silicon, and the inactive group. Patterned substrate to be used. 2. The patterned substrate according to claim 1, wherein the film pattern is a conductive film, an insulating film, or a semiconductor film. 3. The film according to claim 1, wherein the film in which the silicon and oxygen are bonded and the inactive group is bonded to the silicon is formed on one surface of the substrate on which the film pattern is formed. Substrate with pattern. 4. The patterned substrate according to claim 1, wherein the inert group is a fluoroalkyl group or an alkyl group. After a film in which silicon and oxygen are bonded to each other and an inert group is bonded to the silicon is formed on the substrate, a printing method is applied to the surface of the film in which the silicon and oxygen are bonded and the inert group is bonded to the silicon. A method for producing a substrate with a pattern, comprising printing a composition using the composition and firing the composition to form a film pattern. 6. The method for manufacturing a patterned substrate according to claim 5, wherein the film pattern is a conductive film, an insulating film, or a semiconductor film. 7. The method for manufacturing a patterned substrate according to claim 5, wherein a film in which the silicon and oxygen are bonded and an inert group is bonded to the silicon is formed on one surface of the substrate. 8. The method for manufacturing a patterned substrate according to claim 5, wherein the inert group is a fluoroalkyl group or an alkyl group. A conductive film formed on a film in which silicon and oxygen are bonded to each other and an inert group is bonded to the silicon, and a film in which silicon and oxygen are bonded to each other and an inert group is bonded to the silicon. A semiconductor device comprising: 10. The semiconductor according to claim 9, wherein the film in which the silicon and oxygen are combined and the inactive group is combined with the silicon is formed on one surface of the insulating film on which the conductive film is formed. apparatus. A semiconductor element on the substrate, a first conductive film connected to the semiconductor element, an insulating film covering the semiconductor element and having an opening exposing a part of the first conductive film, and the exposed A film in which silicon and oxygen are formed on the surface of the first conductive film and the insulating film, and an inert group is bonded to the silicon, and an inactive group is bonded to the silicon and oxygen and the silicon. And a second conductive film formed over the film to be formed. The film in which the silicon and oxygen are combined and the inert group is combined with the silicon is a surface of the conductive film connected to the semiconductor element and the surface of the insulating film on which the conductive film is formed. A semiconductor device formed on one surface. 13. The semiconductor device according to claim 11, wherein the conductive film functions as an antenna, a pixel electrode, or a wiring. 14. The semiconductor device according to claim 11, wherein the inactive group is a fluoroalkyl group or an alkyl group. After forming a film in which silicon and oxygen are bonded and an inactive group is bonded to silicon on the insulating film, a printing method is performed on the surface of the film in which the silicon and oxygen are bonded and the inactive group is bonded to the silicon. A method for manufacturing a semiconductor device, comprising: printing a composition using a material; and firing the composition to form a film pattern. 16. The method for manufacturing a semiconductor device according to claim 15, wherein a film in which the silicon and oxygen are bonded and an inactive group is bonded to the silicon is formed on one surface of the insulating film. 17. The method for manufacturing a semiconductor device according to claim 15, wherein the film pattern is a conductive film, an insulating film, or a semiconductor film. A semiconductor element is formed on a substrate, an insulating film covering the semiconductor element and having an opening exposing a part of the conductive film connected to the semiconductor element is formed, and the insulating film and the exposed conductive film A film in which silicon and oxygen are bonded and an inert group is bonded to the silicon is formed, and a printing method is used on the film in which silicon and oxygen are bonded and the inert group is bonded to the silicon. A method for manufacturing a semiconductor device, comprising: printing a composition and baking the composition to form a conductive film. 19. The semiconductor device according to claim 18, wherein a film in which the silicon and oxygen are bonded and an inactive group is bonded to the silicon is formed on one surface of the insulating film and the exposed surface of the conductive film. Manufacturing method. 20. The method for manufacturing a semiconductor device according to claim 11, wherein the conductive film is a conductive film functioning as an antenna, an electrode, or a wiring. 21. The method for manufacturing a semiconductor device according to claim 15, wherein the inactive group is a fluoroalkyl group or an alkyl group.