JP2006245095A - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device Download PDF

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JP2006245095A
JP2006245095A JP2005055549A JP2005055549A JP2006245095A JP 2006245095 A JP2006245095 A JP 2006245095A JP 2005055549 A JP2005055549 A JP 2005055549A JP 2005055549 A JP2005055549 A JP 2005055549A JP 2006245095 A JP2006245095 A JP 2006245095A
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resin
hole
substrate
manufacturing
semiconductor device
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Koji Yoshimura
幸二 吉村
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Priority to JP2005055549A priority Critical patent/JP2006245095A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a surface-mounting semiconductor light-emitting device having high connection reliability by reliably preventing resin from leaking when resin-sealing a semiconductor element. <P>SOLUTION: In the manufacturing method of the semiconductor device, the semiconductor element is mounted onto an element mounting substrate 3 in which grooved electrodes 6 are provided on one side in a row, and is resin-sealed by a resin package 5. The method includes a process for mounting the semiconductor element onto a manufacture substrate on which a through-hole that becomes the grooved electrode 6 is formed at a position that becomes one side of the element mounting substrate 3, a process for filling the through-hole with a first resin, a process for sealing the semiconductor element with a second resin to form a resin package 5, a process for cutting the manufacture substrate as an element mounting substrate and for setting the through hole to be the grooved electrode, and a process for removing the first resin remaining on the grooved electrode 6. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、一側面に溝状電極が設けられた素子搭載基板に、半導体素子を搭載し、樹脂で半導体素子を封止した半導体装置の製造方法に関する。   The present invention relates to a method for manufacturing a semiconductor device in which a semiconductor element is mounted on an element mounting substrate having a groove electrode on one side surface and the semiconductor element is sealed with a resin.

半導体装置の一例である光半導体装置を図7に示す。図7に示すように、光半導体装置20は、基板21に、発光素子22a、受光素子22b、制御素子22cなどの半導体素子22が搭載されている。この基板21には、配線パターン(図示せず)が形成され、それぞれの半導体素子22とワイヤで導通接続されている。基板21の長手方向の一方の側面には、半円筒形状に形成された溝状電極23が一列に設けられている。この半円筒形状の溝状電極23の内側面が接続端子としての接続面となる。基板21に搭載された半導体素子22は、光透過性樹脂で形成された樹脂パッケージ24で封止されている。図7に示される光半導体装置20は、赤外線データ通信モジュールなので、この樹脂パッケージ24は、赤外線透過性樹脂である。   An optical semiconductor device which is an example of a semiconductor device is shown in FIG. As shown in FIG. 7, the optical semiconductor device 20 includes a substrate 21 on which semiconductor elements 22 such as a light emitting element 22a, a light receiving element 22b, and a control element 22c are mounted. A wiring pattern (not shown) is formed on the substrate 21 and is electrically connected to each semiconductor element 22 by wires. On one side surface of the substrate 21 in the longitudinal direction, groove-like electrodes 23 formed in a semi-cylindrical shape are provided in a row. The inner surface of the semi-cylindrical groove electrode 23 becomes a connection surface as a connection terminal. The semiconductor element 22 mounted on the substrate 21 is sealed with a resin package 24 formed of a light transmissive resin. Since the optical semiconductor device 20 shown in FIG. 7 is an infrared data communication module, the resin package 24 is an infrared transparent resin.

このような光半導体装置の製造方法は、まず、素子搭載基板の一方の側面となる位置に溝状電極となるスルーホールが列状に形成され、この列状に形成されたスルーホールが、マトリックス状に形成された製造基板を準備する。この製造基板に半導体素子を導通搭載し、製造基板上のそれぞれの光半導体素子を封止して樹脂パッケージを形成する。そして、ダイサーで個々の光半導体装置とするための切断を行う。その際にスルーホールを切断して半円筒形とする。   In such a method of manufacturing an optical semiconductor device, first, through holes serving as groove-like electrodes are formed in a row at a position on one side of the element mounting substrate, and the through holes formed in this row are formed in a matrix. A manufacturing substrate formed in a shape is prepared. A semiconductor element is conductively mounted on the manufacturing substrate, and each optical semiconductor element on the manufacturing substrate is sealed to form a resin package. Then, a dicer is used to cut individual optical semiconductor devices. At that time, the through hole is cut into a semi-cylindrical shape.

しかし、この製造方法では、封止する際に、溶融した樹脂が円筒形状のスルーホールの開口部より浸入してスルーホール内部を覆ってしまうことがある。そうなると封止後にダイシングを行い1個1個の半導体装置とした場合に、接続端子としての接続面が封止樹脂で覆われてしまう。従って、外部の回路基板への実装時に接触不良が発生することがある。そこで封止する半導体素子を搭載した基板表面側には、スルーホールの開口部にレジスト膜を形成し、蓋をすることで樹脂の浸入を防止することができる。このように製造される表面実装型の半導体発光装置の一例である赤外線データ通信モジュールが特許文献1に記載されている。
特開2002−198572号公報
However, in this manufacturing method, when sealing, molten resin may enter through the opening of the cylindrical through hole and cover the inside of the through hole. In this case, when dicing is performed after sealing to form one semiconductor device, the connection surface as the connection terminal is covered with the sealing resin. Therefore, a contact failure may occur during mounting on an external circuit board. Therefore, a resin film can be formed on the opening of the through hole on the surface side of the substrate on which the semiconductor element to be sealed is mounted, and the resin can be prevented from entering by covering the substrate. An infrared data communication module, which is an example of a surface-mount type semiconductor light emitting device manufactured in this way, is described in Patent Document 1.
JP 2002-198572 A

特許文献1に記載の表面実装型の半導体発光装置の一例である赤外線データ通信モジュールでは、スルーホールの開口部へレジスト膜を形成することで、樹脂の浸入を防止しているが、レジスト膜は100〜200μm程度の薄さであるため、樹脂を金型へ注入する際に、樹脂の圧力によりスルーホールの開口部内にレジスト膜が押圧され変形し、より強い圧力がレジスト膜の変形した部分にかかることでレジスト膜が破損し、スルーホール内に樹脂漏れが発生するという問題がある。そうなると、やはり封止樹脂が接続端子とするスルーホールの内側面に付着して、外部の回路基板への実装時に接触不良が発生することとなる。従って、接続信頼性の高い半導体装置が求められている。   In the infrared data communication module which is an example of the surface-mount type semiconductor light-emitting device described in Patent Document 1, the resist film is prevented from entering by forming a resist film in the opening of the through hole. Since the thickness is about 100 to 200 μm, when the resin is injected into the mold, the resist film is pressed and deformed in the opening of the through hole by the pressure of the resin, and a stronger pressure is applied to the deformed portion of the resist film. This causes a problem that the resist film is damaged and resin leakage occurs in the through hole. In this case, the sealing resin also adheres to the inner side surface of the through hole serving as the connection terminal, and a contact failure occurs when mounted on an external circuit board. Therefore, a semiconductor device with high connection reliability is required.

そこで、本発明においては、半導体素子の樹脂封止の際の樹脂漏れを確実に防止することで、接続信頼性の高い表面実装型の半導体発光装置の製造方法を提供することを目的とする。   Accordingly, an object of the present invention is to provide a method for manufacturing a surface-mounting type semiconductor light emitting device with high connection reliability by reliably preventing resin leakage during resin sealing of a semiconductor element.

本発明の半導体装置の製造方法は、一方または両方の側面に溝状電極が列状に設けられた素子搭載基板に半導体素子が搭載され、この半導体素子を樹脂パッケージで樹脂封止した半導体装置の製造方法において、前記素子搭載基板の一方または両方の側面となる位置に溝状電極となるスルーホールが形成された製造基板に前記半導体素子を搭載する工程と、前記スルーホールに第1の樹脂を充填して硬化させる工程と、前記半導体素子を第2の樹脂で封止して前記樹脂パッケージを形成する工程と、前記製造基板を切断して前記素子搭載基板とし、前記スルーホールを前記溝状電極とする工程と、前記溝状電極に残った前記第1の樹脂を除去する工程とを含むことを特徴とする。   The semiconductor device manufacturing method of the present invention is a semiconductor device in which a semiconductor element is mounted on an element mounting substrate in which groove-like electrodes are provided in a row on one or both side surfaces, and the semiconductor element is resin-sealed with a resin package. In the manufacturing method, a step of mounting the semiconductor element on a manufacturing substrate in which a through-hole serving as a groove-like electrode is formed at a position on one or both side surfaces of the element mounting substrate, and a first resin in the through-hole Filling and curing, sealing the semiconductor element with a second resin to form the resin package, cutting the manufacturing substrate to form the element mounting substrate, and forming the through hole in the groove shape A step of forming an electrode; and a step of removing the first resin remaining in the grooved electrode.

本発明の半導体装置の製造方法によれば、予め溝状電極となるスルーホールに第1の樹脂を充填しているので、第2の樹脂が接続端子とするスルーホールの内側面に付着して、外部の回路基板への実装時に接触不良が発生することが防止できる。よって、接続信頼性の高い半導体装置とすることができる。   According to the method for manufacturing a semiconductor device of the present invention, since the first resin is filled in the through-hole that becomes the groove-shaped electrode in advance, the second resin adheres to the inner surface of the through-hole serving as the connection terminal. In addition, it is possible to prevent a contact failure from occurring during mounting on an external circuit board. Therefore, a semiconductor device with high connection reliability can be obtained.

本願の第1の発明は、一方または両方の側面に溝状電極が列状に設けられた素子搭載基板に半導体素子が搭載され、この半導体素子を樹脂パッケージで樹脂封止した半導体装置の製造方法において、素子搭載基板の一方または両方の側面となる位置に溝状電極となるスルーホールが形成された製造基板に半導体素子を搭載する工程と、スルーホールに第1の樹脂を充填して硬化させる工程と、半導体素子を第2の樹脂で封止して樹脂パッケージを形成する工程と、製造基板を切断して素子搭載基板とし、スルーホールを溝状電極とする工程と、溝状電極に残った第1の樹脂を除去する工程とを含むことを特徴としたものである。   According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor device in which a semiconductor element is mounted on an element mounting substrate in which groove-like electrodes are provided in rows on one or both side surfaces, and the semiconductor element is resin-sealed with a resin package. , A step of mounting a semiconductor element on a manufacturing substrate in which a through-hole serving as a groove-like electrode is formed at a position on one or both side surfaces of the element mounting substrate, and the through-hole is filled with a first resin and cured. A step of sealing a semiconductor element with a second resin to form a resin package, a step of cutting the manufacturing substrate to form an element mounting substrate, and forming a through-hole as a grooved electrode, and remaining in the grooved electrode And a step of removing the first resin.

第2の樹脂で樹脂パッケージを形成する際に、製造基板に設けられた溝状電極となるスルーホールに予め第1の樹脂を充填して硬化させているので、圧入された第2の樹脂の圧力により第1の樹脂が変形したり、押し出されたりすることなく、スルーホールに第2の樹脂が浸入することが防止できる。従って、第2の樹脂が接続端子とするスルーホールの内側面に付着して、外部の回路基板への実装時に接触不良が発生することが防止できる。   When forming the resin package with the second resin, the first resin is filled and cured in advance in the through-holes to be grooved electrodes provided on the manufacturing substrate, so that the press-fitted second resin It is possible to prevent the second resin from entering the through hole without the first resin being deformed or pushed out by the pressure. Therefore, it is possible to prevent the second resin from adhering to the inner side surface of the through hole serving as the connection terminal and causing a contact failure when mounted on an external circuit board.

本願の第2の発明は、製造基板を切断して素子搭載基板とし、スルーホールを溝状電極とするときに、溝状電極が側方に向かって徐々に広がる溝となるような位置でスルーホールを切断することを特徴としたものである。   According to a second invention of the present application, when the manufacturing substrate is cut to form an element mounting substrate and the through hole is formed as a grooved electrode, the through electrode is formed at a position where the grooved electrode becomes a groove that gradually spreads sideways. It is characterized by cutting a hole.

側方に向かって徐々に広がる溝となるような位置でスルーホールを切断して、スルーホールを溝状電極としているので、溝状電極に残った第1の樹脂を除去するときに、溝から外へ硬化した第1の樹脂が邪魔されることなく取り除くことができる。   Since the through hole is cut at a position where the groove gradually expands to the side, and the through hole is used as a groove electrode, when removing the first resin remaining in the groove electrode, the through hole is removed from the groove. The first cured resin can be removed without being disturbed.

本願の第3の発明は、スルーホールに充填する第1の樹脂は、ワックス成分を添加したエポキシ系樹脂であることを特徴としたものである。   The third invention of the present application is characterized in that the first resin filled in the through hole is an epoxy resin to which a wax component is added.

第1の樹脂を溝状電極から除去する際に、第1の樹脂をワックス成分を添加したエポキシ系樹脂としたので、第1の樹脂と溝状電極の内側面との密着性を低くすることができ、第1の樹脂を容易に溝状電極から除去することができる。   When removing the first resin from the groove electrode, the first resin is an epoxy resin to which a wax component is added, so that the adhesion between the first resin and the inner surface of the groove electrode is reduced. And the first resin can be easily removed from the grooved electrode.

(実施の形態)
本発明の実施の形態に係る半導体装置の製造方法を、光半導体装置を例に説明する。
(Embodiment)
A method for manufacturing a semiconductor device according to an embodiment of the present invention will be described using an optical semiconductor device as an example.

まず、本発明の実施の形態に係る半導体装置の製造方法によって得られる光半導体装置を図1に基づいて説明する。図1は、本発明の実施の形態に係る半導体装置の製造方法によって得られる光半導体装置を説明する図であり、(a)は正面図、(b)は平面図、(c)は底面図、(d)は側面図である。図2は、図1(b)の樹脂パッケージを省略した平面図である。   First, an optical semiconductor device obtained by a method for manufacturing a semiconductor device according to an embodiment of the present invention will be described with reference to FIG. 1A and 1B are diagrams for explaining an optical semiconductor device obtained by a method for manufacturing a semiconductor device according to an embodiment of the present invention. FIG. 1A is a front view, FIG. 1B is a plan view, and FIG. (D) is a side view. FIG. 2 is a plan view in which the resin package of FIG. 1B is omitted.

図1および図2に示すように、光半導体装置1は、配線パターン2が形成された素子搭載基板3に半導体素子4が搭載され、半導体素子4が樹脂パッケージ5で封止されたものである。   As shown in FIGS. 1 and 2, the optical semiconductor device 1 includes a semiconductor element 4 mounted on an element mounting substrate 3 on which a wiring pattern 2 is formed, and the semiconductor element 4 is sealed with a resin package 5. .

素子搭載基板3は、略矩形状に形成され、その一方の側面に溝状電極6が一列に設けられている。溝状電極6は半円筒形状に形成され、配線パターン2と導通するとともに、半導体素子4の搭載面の反対となる面に設けられた電極7と導通している。この半円筒形状の溝状電極6の内側面6aが接続端子としての接続面となる。この接続面は、半田実装性を向上させるために金メッキが施されている。   The element mounting substrate 3 is formed in a substantially rectangular shape, and groove electrodes 6 are provided in a row on one side surface thereof. The groove electrode 6 is formed in a semi-cylindrical shape, and is electrically connected to the wiring pattern 2 and electrically connected to an electrode 7 provided on a surface opposite to the mounting surface of the semiconductor element 4. The inner side surface 6a of the semi-cylindrical groove electrode 6 becomes a connection surface as a connection terminal. This connection surface is plated with gold in order to improve solder mountability.

半導体素子4は、発光素子4aと、受光素子4bと、制御素子4cとから構成される。これらの発光素子4aと、受光素子4bと、制御素子4cとは、素子搭載基板3にペースト8により接着されるとともに、ワイヤ9で配線パターン2と導通している。   The semiconductor element 4 includes a light emitting element 4a, a light receiving element 4b, and a control element 4c. The light emitting element 4 a, the light receiving element 4 b, and the control element 4 c are bonded to the element mounting substrate 3 by the paste 8 and are electrically connected to the wiring pattern 2 by the wires 9.

樹脂パッケージ5は、発光素子4aの光出射面と受光素子4bの光入射面とに、半球状に形成されたレンズ部5aが設けられている。樹脂パッケージ5は、発光素子4aと受光素子4bが赤外線で通信を行うものであれば、赤外線透過性を有する樹脂を用いる。この樹脂パッケージ5は、例えば、エポキシ系樹脂を用いることができる。   The resin package 5 is provided with a hemispherical lens portion 5a on the light emitting surface of the light emitting element 4a and the light incident surface of the light receiving element 4b. If the light emitting element 4a and the light receiving element 4b communicate with infrared rays, the resin package 5 uses a resin having infrared transparency. For example, an epoxy resin can be used for the resin package 5.

以上のように構成される本発明の実施の形態に係る半導体装置の製造方法について図に基づいて説明する。図3は、製造基板を説明する平面図である。図4は、製造基板に樹脂パッケージを形成した状態の平面図である。図5は、製造基板を切断する際のスルーホールの切断位置を説明する平面図である。図6は、個々の半導体発光装置としたときの正面図である。   A method of manufacturing a semiconductor device according to the embodiment of the present invention configured as described above will be described with reference to the drawings. FIG. 3 is a plan view for explaining a production substrate. FIG. 4 is a plan view of a state in which a resin package is formed on the manufacturing substrate. FIG. 5 is a plan view for explaining a cutting position of the through hole when the manufacturing substrate is cut. FIG. 6 is a front view of an individual semiconductor light emitting device.

図3に示すように、まず、製造基板10を準備する。この製造基板10は、個々の素子搭載基板3となる位置に配線パターン2が形成されており、その素子搭載基板3の一方の側面となる位置に溝状電極6となるスルーホール11が列状に形成されている。そして、これらの配線パターン2と列状に形成されたスルーホール11が、マトリックス状に形成されたものである。   As shown in FIG. 3, first, the production substrate 10 is prepared. In the manufacturing substrate 10, the wiring pattern 2 is formed at a position to be an individual element mounting substrate 3, and the through holes 11 to be grooved electrodes 6 are arranged in rows at a position to be one side surface of the element mounting substrate 3. Is formed. The through holes 11 formed in a row with these wiring patterns 2 are formed in a matrix.

次に、製造基板10のスルーホール11に樹脂(第1の樹脂)を充填する。この第1の樹脂は、熱硬化性を有し、ワックス成分(カルナバ、ポリエチレン等の離型剤)を添加したエポキシ系樹脂を用いることができる。このワックス成分を添加したエポキシ系樹脂は、スルーホール11の表面に施された金メッキと密着性が低い樹脂である。充填は、製造基板10上に第1の樹脂を適量載せ、スキージで製造基板10の上面を均すことで、容易にスルーホール11内に充填することができる。そしてスルーホール11に第1の樹脂を充填した製造基板10を加熱炉で加熱して樹脂を硬化させる。このスルーホール11に充填する樹脂は、光硬化性でも使用できるが、光がスルーホール11の奥まで届きにくいので、熱硬化性を有する樹脂を用いるのが望ましい。   Next, a resin (first resin) is filled into the through hole 11 of the manufacturing substrate 10. As the first resin, an epoxy resin having thermosetting properties and a wax component (release agent such as carnauba or polyethylene) added can be used. The epoxy resin to which the wax component is added is a resin having low adhesion to the gold plating applied to the surface of the through hole 11. The filling can be easily filled in the through hole 11 by placing an appropriate amount of the first resin on the production substrate 10 and leveling the upper surface of the production substrate 10 with a squeegee. Then, the production substrate 10 in which the first resin is filled in the through hole 11 is heated in a heating furnace to cure the resin. The resin filled in the through-hole 11 can be used even if it is photo-curing, but it is desirable to use a thermo-curing resin because light does not easily reach the depth of the through-hole 11.

この製造基板10に、半導体素子4を搭載する。これは、半導体素子4を配置する位置に塗布されたペーストに半導体素子4を載置することで、製造基板10と半導体素子4とを接着する。   The semiconductor element 4 is mounted on the manufacturing substrate 10. This is because the semiconductor element 4 is placed on the paste applied at the position where the semiconductor element 4 is disposed, thereby bonding the manufacturing substrate 10 and the semiconductor element 4 together.

そして、レンズ部5aとなる凹部が形成された下型と、平面である上型とで構成される金型で、製造基板10を型締めし、この金型に樹脂パッケージ5を形成する樹脂(第2の樹脂)を注入して樹脂封止を行う。樹脂パッケージ5を形成する第2の樹脂を金型に圧送しても、スルーホール11には第1の樹脂が充填して硬化しているので、第1の樹脂が変形したり、押し出されたりすることはない。従って、スルーホール11に第2の樹脂が浸入することが防止できる。   Then, the manufacturing substrate 10 is clamped with a mold composed of a lower mold in which a concave portion to be the lens portion 5a is formed and an upper mold that is a flat surface, and a resin ( The second resin is injected to perform resin sealing. Even if the second resin forming the resin package 5 is pumped into the mold, the first resin is deformed or pushed out because the first resin is filled in the through hole 11 and hardened. Never do. Therefore, it is possible to prevent the second resin from entering the through hole 11.

このようにして、発光素子4aの光出射する位置と、受光素子4bの光入射する位置にレンズ部5aが設けられた樹脂パッケージ5が形成される。図4に樹脂パッケージ5が形成された製造基板10を示す。   In this manner, the resin package 5 is formed in which the lens portion 5a is provided at the light emitting position of the light emitting element 4a and the light incident position of the light receiving element 4b. FIG. 4 shows the manufacturing substrate 10 on which the resin package 5 is formed.

図4に示すように、ダイサーで、A1−A1線、A2−A2線と順次製造基板10を切断して横列を分割し、次にB1−B1線、B2−B2線と順次縦列を切断して個々の半導体発光装置とする。個々の半導体発光装置とするために、スルーホール11を切断することとなるが、その際に、このスルーホール11が側方に向かって徐々に広がる溝となるような位置で切断する。つまり、図5に示すように、各スルーホール11の中心を結ぶ仮想線Lより、内側となる位置でスルーホール11を切断して溝状電極とすれば、溝状電極が側方に向かって徐々に広がる溝となり、平面視して半円以下の円弧となるため、スルーホール11に充填された第1の樹脂が取り出しやすくなる。   As shown in FIG. 4, with a dicer, the A1-A1 line, A2-A2 line and the production substrate 10 are sequentially cut to divide the row, and then the B1-B1 line, B2-B2 line and the vertical column are cut sequentially. Individual semiconductor light emitting devices. In order to obtain individual semiconductor light emitting devices, the through hole 11 is cut. At this time, the through hole 11 is cut at a position where the through hole 11 becomes a groove gradually expanding toward the side. That is, as shown in FIG. 5, if the through-hole 11 is cut into a groove-like electrode at a position on the inner side from the imaginary line L connecting the centers of the through-holes 11, the groove-like electrode is directed to the side. Since the groove gradually expands and becomes an arc of a semicircle or less in plan view, the first resin filled in the through hole 11 can be easily taken out.

図6に示すように、溝状電極6に硬化した第1の樹脂12が残った状態の半導体発光装置1から、第1の樹脂12を除去する。これは、ダイサーで製造基板10を切断する際の切断面にできたバリを除去する磁気研磨装置で行うことができる。磁気研磨装置を用いることで、バリが除去できるとともに、第1の樹脂12を除去することができる。従って、第1の樹脂の除去は、新たな工程を追加することなく行うことができる。この磁気研磨装置は、バリ取りを行う半導体発光装置1を容器に、針状の研磨部材とともに入れ、容器の外から磁界を印加にして研磨部材を撹拌する装置である。この撹拌により研磨部材が、切断時の端面にできたバリを除去するとともに、溝状電極6に残った第1の樹脂を除去する。   As shown in FIG. 6, the first resin 12 is removed from the semiconductor light emitting device 1 with the cured first resin 12 remaining on the grooved electrode 6. This can be performed by a magnetic polishing apparatus that removes burrs formed on the cut surface when the manufacturing substrate 10 is cut with a dicer. By using a magnetic polishing apparatus, burrs can be removed and the first resin 12 can be removed. Therefore, the removal of the first resin can be performed without adding a new process. This magnetic polishing apparatus is an apparatus in which a semiconductor light-emitting device 1 that performs deburring is placed in a container together with a needle-shaped polishing member, and a magnetic field is applied from outside the container to stir the polishing member. By this stirring, the polishing member removes burrs formed on the end face at the time of cutting, and removes the first resin remaining in the grooved electrode 6.

このように、第2の樹脂が接続端子となるスルーホールの内側面に付着して、外部の回路基板への実装時に接触不良が発生することが防止できる。   In this way, it is possible to prevent the second resin from adhering to the inner side surface of the through hole serving as the connection terminal and causing a contact failure when mounted on an external circuit board.

本発明は、半導体素子の樹脂封止の際の樹脂漏れを確実に防止することで、接続信頼性を向上させることができるので、一側面に溝状電極が設けられた素子搭載基板に、半導体素子を搭載し、樹脂で半導体素子を封止した半導体装置の製造方法に好適に用いることができる。   Since the present invention can improve the connection reliability by reliably preventing the resin leakage at the time of resin sealing of the semiconductor element, the semiconductor device is mounted on the element mounting substrate provided with the groove electrode on one side surface. It can be suitably used in a method for manufacturing a semiconductor device in which an element is mounted and the semiconductor element is sealed with resin.

本発明の実施の形態に係る半導体装置の製造方法によって得られる光半導体装置を説明する図であり、(a)は正面図、(b)は平面図、(c)は底面図、(d)は側面図It is a figure explaining the optical semiconductor device obtained by the manufacturing method of the semiconductor device which concerns on embodiment of this invention, (a) is a front view, (b) is a top view, (c) is a bottom view, (d) Is a side view 図1(b)の樹脂パッケージを省略した平面図FIG. 1B is a plan view in which the resin package is omitted. 製造基板を説明する平面図Plan view explaining the production substrate 製造基板に樹脂パッケージを形成した状態の平面図Plan view of resin package formed on the production board 製造基板を切断する際のスルーホールの切断位置を説明する平面図Plan view explaining the cutting position of the through hole when cutting the production substrate 個々の半導体発光装置としたときの正面図Front view of individual semiconductor light emitting devices 半導体装置の一例である光半導体装置を説明する図FIG. 6 illustrates an optical semiconductor device that is an example of a semiconductor device.

符号の説明Explanation of symbols

1 半導体発光装置
2 配線パターン
3 素子搭載基板
4 半導体素子
4a 発光素子
4b 受光素子
4c 制御素子
5 樹脂パッケージ
5a レンズ部
6 溝状電極
6a 内側面
7 電極
8 ペースト
9 ワイヤ
10 製造基板
11 スルーホール
12 第1の樹脂
DESCRIPTION OF SYMBOLS 1 Semiconductor light-emitting device 2 Wiring pattern 3 Element mounting board | substrate 4 Semiconductor element 4a Light emitting element 4b Light receiving element 4c Control element 5 Resin package 5a Lens part 6 Groove electrode 6a Inner side surface 7 Electrode 8 Paste 9 Wire 10 Manufacturing board 11 Through hole 12 1st 1 resin

Claims (3)

一方または両方の側面に溝状電極が列状に設けられた素子搭載基板に半導体素子が搭載され、この半導体素子を樹脂パッケージで樹脂封止した半導体装置の製造方法において、
前記素子搭載基板の一方または両方の側面となる位置に溝状電極となるスルーホールが形成された製造基板に前記半導体素子を搭載する工程と、
前記スルーホールに第1の樹脂を充填して硬化させる工程と、
前記半導体素子を第2の樹脂で封止して前記樹脂パッケージを形成する工程と、
前記製造基板を切断して前記素子搭載基板とし、前記スルーホールを前記溝状電極とする工程と、
前記溝状電極に残った前記第1の樹脂を除去する工程とを含むことを特徴とする半導体装置の製造方法。
In a method of manufacturing a semiconductor device in which a semiconductor element is mounted on an element mounting substrate in which groove electrodes are provided in rows on one or both side surfaces, and the semiconductor element is resin-sealed with a resin package.
Mounting the semiconductor element on a manufacturing substrate in which a through-hole serving as a grooved electrode is formed at a position which is one or both side surfaces of the element mounting substrate;
Filling and curing the first resin in the through hole;
Sealing the semiconductor element with a second resin to form the resin package;
Cutting the manufacturing substrate to form the element mounting substrate, and forming the through hole as the groove electrode;
And a step of removing the first resin remaining in the groove electrode.
前記製造基板を切断して前記素子搭載基板とし、前記スルーホールを前記溝状電極とするときに、前記溝状電極が側方に向かって徐々に広がる溝となるような位置で前記スルーホールを切断することを特徴とする請求項1記載の半導体装置の製造方法。 When the manufacturing substrate is cut to form the element mounting substrate and the through hole is used as the groove-shaped electrode, the through-hole is formed at a position where the groove-shaped electrode becomes a groove that gradually spreads laterally. The semiconductor device manufacturing method according to claim 1, wherein the semiconductor device is cut. 前記スルーホールに充填する前記第1の樹脂は、ワックス成分を添加したエポキシ系樹脂であることを特徴とする請求項1または2記載の半導体装置の製造方法。 3. The method of manufacturing a semiconductor device according to claim 1, wherein the first resin filling the through hole is an epoxy resin to which a wax component is added.
JP2005055549A 2005-03-01 2005-03-01 Method for manufacturing semiconductor device Pending JP2006245095A (en)

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