JP2006244934A - Manufacturing method of self-light emission panel - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent a short circuit between a lower electrode and an upper electrode in a self-light emission element with which a self-light emission panel is provided. <P>SOLUTION: In the self-light emission panel 100, the self-light emission element 102 provided between the lower electrode 106 and the upper electrode 107 with a film-forming layer 108 containing a light emission layer is sealed between a substrate 101 and a sealing base 103. In a manufacturing method of the self-light emission panel panel 100, in a film-forming layer forming process where the film-forming layer 108 is formed on the sealing base 103 side of the lower electrode 106, after a process where convex parts on the lower electrode 106 are embedded and a process where concave parts of the lower electrode 106 are embedded are performed, the upper electrode 107 are formed on the sealing base 103 side of the film-forming layer 108. Hence, the short circuit between the lower electrode 106 and the upper electrode 107 is prevented. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a self-luminous panel.

  A self-light-emitting element in which a film-forming layer including a light-emitting layer is provided between electrode pairs emits light by recombination of holes and electrons in the light-emitting layer when a voltage is applied between the electrodes. The self-luminous element is used for a self-luminous panel that performs display, illumination, various information display, or the like. The self-light-emitting panel has a configuration in which one or a plurality of self-light-emitting elements are formed on a substrate and sealed by a sealing unit. The sealing means here is one that is hermetically sealed with a sealing substrate, one that is solid-sealed with a resin or the like filled between the substrate and the sealing substrate, and has a barrier property for a self-luminous element. The thing covered with the film-form or film-form sealing base material is mentioned.

  Examples of the self-light emitting element include an organic EL (Electro Luminescence) element in which a light emitting layer is formed of an organic compound. An organic EL element exhibits diode characteristics when a film-forming layer is correctly interposed between electrodes. However, if there are scratches, protrusions, foreign objects, etc. on the substrate, the film is formed in a state where the electrodes and the film formation layer are disturbed.

  In the film formation layer formed in a disordered state, there is a portion where the thickness of the layer is locally thin. Insulation resistance becomes low at the portion where the thickness of the layer is thin. Similarly, when a conductive foreign substance adheres to the substrate, the film is formed in a state where the electrodes and the film formation layer are disturbed, and a part having a low insulation resistance is generated locally.

  A portion having low insulation resistance in the organic EL element does not exhibit diode characteristics. Moreover, the part with a low insulation tolerance in an organic EL element will be in the state which a short circuit between electrodes generate | occur | produced or becomes low impedance, and what is called a leak current generate | occur | produced. Since the generation of leakage current causes element breakdown, drive failure, display failure, and the like, a self-luminous panel in which leakage current is generated during manufacture is regarded as a defective product. When the occurrence rate of such defective products is high, the yield in manufacturing the self-luminous panel decreases, and the manufacturing unit price of the self-luminous panel increases.

  In order to eliminate such a problem, various techniques for embedding the convex portion of the lower electrode have been conventionally disclosed (for example, see Patent Documents 1 to 6 below).

JP 2000-91067 A JP 2001-68272 A JP 2001-267071 A JP 09-245965 A Japanese Patent Laid-Open No. 08-54833 JP-T-2001-523768

  However, all of the conventional techniques disclosed in Patent Documents 1 to 6 described above are embedding treatments for the convex portions in the lower electrode, and do not solve the problems caused by the concave portions in the lower electrode.

  Even in the same lower electrode, it is considered that the measures for improving the insulation resistance are different between the case where the cause of locally low insulation resistance is caused by the convex part and the case where it is caused by the concave part. The conventional techniques including Patent Documents 1 to 6 have a problem that it is difficult to prevent the occurrence of leakage current due to the recess.

  Therefore, the present invention is an example of a problem to cope with such problems. That is, an object of the present invention is to prevent a short circuit between the lower electrode and the upper electrode. Another object of the present invention is to prevent the occurrence of leakage current due to a short circuit between the lower electrode and the upper electrode. Furthermore, an object of the present invention is to improve the yield in the manufacture of the self-luminous panel and to suppress the increase in the manufacturing unit price of the self-luminous panel.

  In order to solve the above-described problems and achieve the object, a method for manufacturing a self-luminous panel according to the invention of claim 1 includes a self-luminous structure in which a film-forming layer including a light-emitting layer is provided between a lower electrode and an upper electrode. In a method of manufacturing a self-luminous panel in which an element is provided on a substrate, a lower electrode forming step for forming the lower electrode on the substrate, and the sealing substrate for the lower electrode formed by the lower electrode forming step A film forming layer forming step for forming a film forming layer on the side, and a convex portion embedding treatment step for embedding a convex portion in the lower electrode formed by the lower electrode forming step in the film forming layer forming step, In the film formation layer forming step, a recess embedding process for embedding a recess in the lower electrode formed by the lower electrode formation process, and the sealing of the film formation layer formed by the film formation layer formation process Upper electrode on substrate side And an upper electrode forming step of forming, characterized by including.

  The self-luminous panel manufacturing method according to an eleventh aspect of the present invention is a self-luminous device in which a self-luminous element provided with a film-forming layer including a light-emitting layer between a lower electrode and an upper electrode is formed on a substrate. In the panel manufacturing method, a lower electrode forming step of forming the lower electrode on the substrate, a film forming layer forming step of forming a film forming layer on the lower electrode formed by the lower electrode forming step, During the film formation layer forming step, the first embedding process step of embedding at least one of the concave portion or the convex portion in the lower electrode formed by the lower electrode formation step, and the film formation layer formation step, A second electrode that embeds at least one of the concave portion or the convex portion in the lower electrode with respect to the lower electrode in which at least one of the concave portion or the convex portion is embedded by the first embedding processing step. And embedding process, characterized in that it contains an upper electrode forming step of forming an upper electrode on top of the deposition layer formed by the deposition layer forming process.

  Exemplary embodiments of a method for manufacturing a self-luminous panel according to the present invention will be described below in detail with reference to the accompanying drawings.

(Schematic configuration of self-luminous panel)
FIG. 1 is a longitudinal side view showing a self-light-emitting panel manufactured by using the method for manufacturing a self-light-emitting panel according to the present embodiment. A self-light-emitting panel 100 manufactured using the method for manufacturing a self-light-emitting panel in the present embodiment includes a substrate 101, a self-light-emitting element 102, a sealing base material 103, an adhesive 104, a desiccant 105, It has. As a material for forming the substrate 101, for example, glass or plastic can be used.

  The self-luminous panel 100 is a mobile phone, an in-vehicle monitor, a home appliance operation monitor, a dot matrix display panel such as a personal computer or a TV, a fixed display for a clock or an advertising panel, a light source for a scanner or a printer, an illumination It is used for display units of various information devices such as liquid crystal backlights. The self-luminous panel 100 includes a self-luminous element 102 arranged in a dot matrix, a display unit having an icon unit (fixed display unit), and a flat or spherical lighting device. There are various forms such as small screens to large screens such as Aurora Vision.

  As a typical self-luminous element, there is an organic EL element. The organic EL element is also referred to as an organic electroluminescence element, an organic EL (OEL) device, an organic light emitting diode (OLED) device, or an electroluminescent light source, but is referred to as an organic EL element in this embodiment. Hereinafter, the self-luminous element 102 will be described as an organic EL element, and will be described with reference numeral 102.

  As an organic material (such as a light emitting material or a charge injection / transport material) that forms the organic EL element 102, a high molecular material or a low molecular material may be used. Currently, organic EL elements 102 using low molecular weight materials have been commercialized as display displays due to progress in material development and manufacturing process development. In this embodiment, an example in which a low molecular material is used as an organic material will be described. In the present embodiment, an element structure between a pair of electrodes is referred to as an “organic EL element”.

  In general, as shown in FIG. 1, the organic EL element 102 includes a lower electrode (in this embodiment, an anode (anode, hole injection electrode)) 106 and an upper electrode (in this embodiment, a cathode (cathode, electron). The film formation layer 108 is sandwiched between the injection electrode) 107). The film-forming layer 108 only needs to have at least one light-emitting layer, and may have a structure in which organic layers having a plurality of functions are stacked. In the organic EL element 102, a layer configuration of “lower electrode (anode) / hole injection layer / hole transport layer / organic EL light emitting layer / electron transport layer / electron injection layer / upper electrode (cathode)” (reference numeral omitted). Is common.

  Each of the layers forming the film formation layer 108 may be formed of a single organic material, which is a mixture of a plurality of materials (mixed layer), or a function of an organic material or an inorganic material in a polymer binder. Materials in which materials (charge transport function, light emitting function, charge blocking function, optical function, etc.) are dispersed may be used.

  In addition, the organic EL element 102 has a structure in which the lower electrode 106 is a cathode (upper electrode is an anode), a structure in which a plurality of light emitting layers in the film formation layer 108 are formed, and a structure in which a plurality of organic EL elements 102 are stacked. (SOLED: Stacked OLED), a structure in which a charge generation layer is interposed between a cathode and an anode (multi-photon element), a structure in which a layer such as a hole transport layer is omitted, or a structure in which a plurality of layers are stacked, a single film formation layer There are various configurations such as only the configuration (one in which each functional layer is continuously formed and the layer boundary is eliminated).

  Note that this embodiment does not limit the configuration of the organic EL element 102. Any organic EL element 102 having the same effect as the self-luminous panel 100 of the present embodiment is interpreted as being included in the technical scope of the present embodiment.

  In the organic EL element 102, when a voltage is applied to the anode (the lower electrode 106 in this embodiment) and the cathode (the upper electrode 107 in this embodiment), holes are injected from the anode into the light emitting layer in the deposition layer 108. Transported, and electrons are injected and transported from the cathode to the light emitting layer in the film formation layer 108. These holes and electrons recombine in the light emitting layer. In the organic EL element 102, a light emitting material forming a light emitting layer is excited by recombination of holes and electrons, and light emission is obtained in the process of transition from the excited state to the ground state.

  One of the lower electrode 106 and the upper electrode 107 is set as a cathode, and the other is set as an anode. The electrode (lower electrode 106 or upper electrode 107) set as the anode is preferably made of a material having a high work function. Examples of materials for forming the anode include metal films such as chromium (Cr), molybdenum (Mo), nickel (Ni), and platinum (Pt), and metal oxide films such as ITO (Indium-Tin-Oxide) and IZO. A transparent conductive film such as can be used.

  The electrode (upper electrode 107 or lower electrode 106) set as the cathode is preferably made of a material having a low work function. As materials for forming the cathode, in particular, metals having a low work function such as alkali metals (Li, Na, K, Rb, Cs), alkaline earth metals (Be, Mg, Ca, Sr, Ba), rare earth metals, The compound or an alloy containing them can be used. When both the lower electrode 106 and the upper electrode 107 are formed of a transparent material, a configuration may be adopted in which a reflective film (not shown) is provided on the electrode side opposite to the light emission side.

  The extraction electrode is an electrode wiring extracted from the upper electrode 107 and the lower electrode 106 to the outside of the organic EL element 102 (outside of the sealing substrate and the sealing film). Although not shown, the extraction electrode connects the organic EL element 102 in the self-luminous panel 100 to an IC or driver that drives the organic EL element 102. As a material for forming the extraction electrode, a low resistance metal material is preferable. For example, Ag, Cr, Al metal or alloys thereof are preferable as the material for forming the extraction electrode.

  The lower electrode 106 and the lead-out wiring are formed by forming a metal oxide ITO, IZO or the like as a thin film using a method such as vapor deposition or sputtering, and patterning the thin film using a method such as a photolithography method. . The lower electrode 106 and the lead-out wiring may have a two-layer structure in which a low-resistance metal such as Ag, an Ag alloy, Al, or Cr is laminated on a material such as ITO or IZO. The lower electrode 106 and the lead-out wiring are formed by stacking a material having high oxidation resistance such as Cu, Cr, Ta on the low resistance metal as a protective layer for the low resistance metal laminated on the material such as ITO or IZO. A three-layer structure may be used.

  The film-forming layer 108 is generally a combination of a hole transport layer, a light-emitting layer, and an electron transport layer. However, the light-emitting layer, the hole transport layer, and the electron transport layer are not only one layer, but a plurality of layers are laminated. May be provided. As for the hole transport layer and the electron transport layer, either one of the layers may be omitted or both layers may be omitted. Various layers such as a hole injection layer, an electron injection layer, and a carrier block layer can be inserted depending on the application. As materials for forming the hole transport layer, the light emitting layer, and the electron transport layer, conventionally used materials (regardless of polymer materials and low molecular materials) can be appropriately selected.

  In the light-emitting material, there are light emission (fluorescence) when returning from the singlet excited state to the ground state and light emission (phosphorescence) when returning from the triplet excited state to the ground state. It can also be used in the organic EL element 102 using light emission.

  As the adhesive 104, a thermosetting type, a chemical curing type (two-liquid mixing), a light (ultraviolet) curing type, or the like can be used. As a material for forming the adhesive 104, acrylic resin, epoxy resin, polyester, polyolefin, or the like can be used. In particular, it is preferable to use an ultraviolet curable epoxy resin. As the adhesive 104, for example, an adhesive made of an ultraviolet curable epoxy resin can be used. A suitable amount of spacers (preferably glass or plastic spacers) having a particle diameter of 1 to 300 μm may be mixed (about 0.1 to 0.5% by weight) with the adhesive 104.

  The desiccant 105 suppresses deterioration of the film formation layer 108 by removing moisture in the sealed space 109. As the desiccant 105, various desiccants including a physical desiccant and a chemical desiccant can be used. Examples of the physical desiccant include zeolite, silica gel, carbon, and carbon nanotube. Examples of the chemical desiccant include alkali metal oxides, metal halides, and chlorine peroxide. In addition, desiccant particles are dispersed in a desiccant obtained by dissolving an organometallic complex in a petroleum solvent such as toluene, xylene or an aliphatic organic solvent, or a binder such as polyethylene, polyisoprene or polyvinyl cinnaate having transparency. The desiccant 105 may be realized by an agent.

  The sealing substrate 103 forms a sealing space 109 that seals the organic EL element 102 from the outside air around the organic EL element 102. Examples of the material for forming the sealing substrate 103 include metal, glass, and plastic. For example, you may use the sealing base material 103 in which the sealing recessed part 110 was formed by giving processes, such as press molding, an etching, and a blast process, with respect to the glass sealing base material 103. FIG.

  The sealing recess 110 may be either a one-stage digging or a two-stage digging. Although not shown, a flat glass and a glass (or plastic) spacer sandwiched between the glass and the substrate 101 are used as a sealing base 103, and the sealing base 103 Alternatively, the sealing space 109 may be formed.

  FIG. 2 is a vertical side view showing another self-light-emitting panel manufactured by using the method for manufacturing a self-light-emitting panel according to the present embodiment. The self-light-emitting panel manufactured using the method for manufacturing a self-light-emitting panel in the present embodiment is not limited to self-light-emitting panel 100 having the structure shown in FIG. As shown in FIG. 2, a self light emitting panel 200 including a substrate 101, a self light emitting element (organic EL element) 102, a sealing film 201, and a sealing base material 202 may be used. The sealing film 201 in the self light emitting panel 200 shown in FIG. 2 may be formed of a single layer film or may be formed by stacking a plurality of protective films.

The material for forming the sealing film 201 may be either an inorganic material or an organic material. Examples of the inorganic material for forming the sealing film 201 include nitrides such as SiN, AlN, and GaN, oxides such as Si ₂ O, Al ₂ O ₃ , Ta ₂ O ₅ , ZnO, and GeO, and oxynitridation such as SiON. Products, SiCN and other carbonitrides, metal fluorine compounds, metal films, and the like.

Examples of the organic material that forms the sealing film 201 include fluorine polymers such as epoxy resin, acrylic resin, polyparaxylene, perfluoroolefin, and perfluoroether, and metal alkoxides such as CH ₃ OM and C ₂ H ₅ OM. , Polyimide precursors, perylene compounds, and the like. The laminated structure and material of the sealing film 201 can be appropriately selected according to the design of the organic EL element 102.

  Examples of the material for forming the sealing substrate 202 include glass substrates such as soda glass, lead glass, and hard glass, plastic substrates such as polyethylene, polypropylene, polyethylene terephthalate, and polymethyl methacrylate, and metal substrates such as aluminum and stainless steel. Various materials such as can be used. As a material for forming the sealing substrate 202, a suitable material can be appropriately selected according to the configuration of the organic EL element 102.

  For example, when the organic EL element 102 has a top emission structure that extracts light from the side opposite to the substrate 101 side, or a TOLED structure that extracts light from both sides of the substrate 101 side and the opposite side, the sealing is performed. It is preferable to use a highly transparent material as a material for forming the stop base material 202 and a thickness having a high transmittance as the thickness of the sealing base material 202.

  On the other hand, for example, when the organic EL element 102 has a bottom emission structure that extracts light from the substrate 101 side, a metal base material or the like may be used as a material for forming the sealing base material 202. For sealing the organic EL element 102, a sealing method such as an airtight sealing method, a solid sealing method, or a film sealing method can be used. Here, the hermetic sealing method is a sealing method in which a space for blocking the organic EL element 102 from the outside air is provided around the organic EL element 102 by a sealing base material such as glass, metal, or plastic. Here, the solid sealing method is a sealing method in which a filler such as a resin is filled in a space that blocks the organic EL element 102 from the outside air. The film sealing method referred to here is a method of laminating a plastic film, a resin film, or the like so as to cover the organic EL element 102, or forming a sealing film having a sealing performance on the organic EL element 102. This is a sealing method.

  The self-light-emitting panel manufactured using the method for manufacturing a self-light-emitting panel in the present embodiment is not limited to the above-described self-light-emitting panels 100 and 200. As long as the above-described self-luminous panels 100 and 200 have the operational effects and do not deviate from the gist of the invention, any design changes are included in the scope of the present embodiment. For example, a passive driving method may be used as a driving method of the self-luminous panels 100 and 200, or an active driving method in which driving is performed using TFTs may be used.

  Although the description is omitted because it is a known technique, in a self-luminous panel driven by a passive driving method, a data line formed by a plurality of anodes and a scanning line formed by a plurality of cathodes cross each other, The organic EL element at the intersection of the data line and the scanning line is selectively caused to emit light. Similarly, although not described, in a self-luminous panel driven by an active driving method, each self-luminous element is provided with a transistor as a switching element, and each self-luminous element is caused to emit light individually.

  In addition, the self-luminous panels 100 and 200 of the present embodiment do not limit the light emission form of the organic EL element 102. The self-luminous panels 100 and 200 of the present embodiment are, for example, a top emission type that takes out light from the opposite side of the substrate 101 side, even if it is a bottom emission type that takes out light from the substrate 101 side. May be.

  Furthermore, the self-luminous panels 100 and 200 in the present embodiment may be monochromatic emission or multicolor emission type of two or more colors. The self-light-emitting panels 100 and 200 that emit multicolor light are manufactured by separately applying a light emitting layer, a CF method using a color filter, a CCM method using a color conversion layer, a photo bleaching method, and a SOLED (transparent stacked OLED) method. It can implement | achieve using various systems, such as.

  In the CF method and the CCM method, multicolor light emission is realized by combining a color conversion layer using a color filter or a fluorescent material with a monochromatic light emitting layer such as white or blue. The photo bleaching method realizes multicolor light emission by irradiating an electromagnetic wave to the light emitting area of the monochromatic light emitting functional layer. The SOLED method realizes multicolor light emission by forming one pixel by vertically stacking sub-pixels of two or more colors along the stacking direction of the film formation layers.

(General manufacturing method of self-luminous panel)
FIG. 3 is a flowchart showing a process flow based on a general method for manufacturing a self-luminous panel. Here, as an example, a method for manufacturing the passive drive type self-luminous panel 100 will be described. In manufacturing the self-luminous panel 100, first, the lower electrode 106 and the lead-out wiring are formed on the substrate 101 by the lower electrode forming step (step S301). The lower electrode 106 and the lead-out wiring are formed by forming a metal oxide ITO, IZO or the like as a thin film using a method such as vapor deposition or sputtering.

  Then, the thin film formed on the substrate 101 is patterned using a method such as photolithography. When forming the two-layered lower electrode 106 and the lead wiring, a low resistance metal such as Ag, an Ag alloy, Al, or Cr is laminated on the patterned thin film. When forming the lower electrode 106 and the lead-out wiring having a three-layer structure, a material having high oxidation resistance such as Cu, Cr, Ta, etc. is laminated as a protective layer on the low resistance metal.

  Next, in the film formation layer forming step (step S302), the materials for forming the hole transport layer, the light emitting layer, and the electron transport layer are sequentially formed on the substrate 101 so as to be laminated on the lower electrode 106 and the lead-out wiring. The film formation layer 108 is formed by stacking. In forming the film formation layer 108, for example, a wet process such as a coating method such as a spin coating method or a dipping method, a printing method such as a screen printing method or an ink jet method, or a dry process such as a vapor deposition method or a laser transfer method is used. Use.

  Here, the self-light-emitting panel 100 is a multicolor light-emitting type, and when forming a light-emitting layer, for example, when using a light-emitting layer coating method, the entire substrate 101 is covered so as to cover all the organic EL elements 102. A method is widely known in which a film forming material to be formed is formed using an oblique evaporation method, and a film forming material for each color is formed using a vertical evaporation method. A film-forming mask corresponding to each luminescent color is used for color-specific coating.

  In the case of adopting a film forming method in which each color is applied using a film forming mask, a film forming material for forming a film over the entire substrate 101 so as to cover all the organic EL elements 102. However, the present invention is not limited to the method of forming a film using the oblique evaporation method and forming the film forming material for each color using the vertical evaporation method. A film forming material which is formed over a plurality of colors may be formed using a vertical evaporation method. In addition, in the case where there are a plurality of film formation materials for film formation over a plurality of colors, the film formation method may be different for each film formation material.

  When painting separately, an organic material that emits light of three RGB colors, not limited to three RGB colors, two-color light emission of a combination of red (R) and blue (B), four-color light emission in which white (W) is added to three RGB colors, etc. The light emitting layer which emits each color of RGB is formed by forming the material which combined these organic materials in the pixel area | region applicable to each color light emission part of RGB. In forming the light emitting layer, for example, a film is formed with the same material twice or more for one pixel region. Thereby, generation | occurrence | production of the non-film-forming part can be prevented.

  Subsequently, the upper electrode 107 is formed on the film forming layer 108 by the upper electrode forming step (step S303). The upper electrode 107 is formed by laminating a plurality of striped metal thin films on the film formation layer 108 in a state orthogonal to the pattern of the lower electrode 106. The upper electrode 107 in this embodiment is a cathode. In forming the metal thin film for realizing the upper electrode 107, for example, a method such as vapor deposition or sputtering is used. As a result, when the organic EL element 102 is viewed along the stacking direction of the film formation layer 108, a matrix is formed by the lower electrode 106 and the upper electrode 107.

  Finally, by the sealing process (step S304), the substrate 101 on which the organic EL element 102 is formed and the sealing base material 103 on which the sealing recess 110 is separately formed are sealed through the adhesive 104. . At the time of sealing, the adhesive 104 is applied to a corresponding portion on the substrate 101, and the substrate 101 and the sealing base material 103 are bonded together so as to sandwich the adhesive 104. In applying the adhesive 104, for example, a dispenser is used. The step of bonding the substrate 101 and the sealing base material 103 is performed in an inert gas atmosphere such as argon gas.

  After the substrate 101 and the sealing base material 103 are bonded together, the adhesive 104 is irradiated with ultraviolet rays from the substrate 101 side (or the sealing base material 103 side). As a result, the adhesive 104 cures in a state where the substrate 101 and the sealing base material 103 are adhered by an ultraviolet curing reaction. As a result, the organic EL element 102 is formed between the substrate 101 and the sealing base material 103 and sealed in a sealing space 109 filled with an inert gas such as argon gas.

  By the way, the lower electrode 106 formed by the above-described method may have a convex portion or a concave portion that causes the performance deterioration of the organic EL element 102. Hereinafter, representative ones of the convex portions and concave portions generated in the lower electrode 106 will be described.

  FIG. 4A is a longitudinal side view illustrating a convex portion generated after forming the lower electrode. The convex portion 410 as shown in FIG. 4A is caused by a film formation failure of the lower electrode 106 or the like. Although illustration is omitted, a similar convex portion is generated when the substrate 101 has a convex flaw. When the protrusion 410 protrudes beyond the thickness of the film formation layer 108, the protrusion 410 in the lower electrode 106 and the upper electrode 107 (see FIG. 2) stacked on the film formation layer 108 are short-circuited. Even if the convex portion 410 does not protrude beyond the thickness of the film formation layer 108, the presence of the convex portion 410 makes it easy to short-circuit because the distance between the tip of the convex portion 410 and the upper electrode 107 becomes short. End up.

  FIG. 4-2 is a longitudinal sectional side view showing a convex portion generated during the formation of the lower electrode. FIG. 4B shows a convex portion 421 that is generated when foreign matter 420 is mixed after the lower electrode 106 is formed (or when the lower electrode 106 is formed). The film formation layer 108 cannot be formed satisfactorily because the foreign matter 420 becomes an obstacle, and for example, a portion 422 where the lower electrode 106 is exposed around the foreign material 420 may be generated. When the upper electrode 107 is formed in this state, the portion 422 where the lower electrode 106 is exposed and the upper electrode 107 are short-circuited.

  FIG. 4-3 is a longitudinal sectional side view showing a recess formed after the formation of the lower electrode. The concave portion 430 as shown in FIG. 4C is generated when foreign matter 420 is mixed after the lower electrode is formed or when the lower electrode 106 is formed as shown in FIG. 4B. Alternatively, foreign matter or the like is mixed when patterning the lower electrode 106 after forming the lower electrode. When the foreign matter 420 is removed by a substrate cleaning process or the like performed after the film formation layer 108 is formed, a concave portion 430 that exposes the lower electrode 106 in a portion where the foreign matter 420 exists may be generated. If the upper electrode 107 (see FIG. 2) is formed in this state, the portion 430 where the lower electrode 106 is exposed and the upper electrode 107 are short-circuited.

  Although illustration is omitted, even when a pinhole is generated due to a film formation failure of the film formation layer 108, a portion where the lower electrode 106 is exposed may be generated. The exposed part and the upper electrode 107 are short-circuited.

(Method for manufacturing self-luminous panel of this embodiment)
Here, in this embodiment, a manufacturing process of a self-luminous panel using an organic EL element as the self-luminous element will be described. The first embedding processing step of embedding at least one of the convex portions 410 and 421 or the concave portion 430 after the lower electrode forming step in the manufacturing process of the self-luminous panel shown in FIG. And a second embedding processing step of embedding at least one of the convex portions 410 and 421 or the concave portion 430.

  A 1st embedding process process performs either process of a convex part embedding process process or a recessed part embedding process. A 2nd embedding process process performs a process different from a 1st embedding process process among a convex part embedding process process or a recessed part embedding process process. In the second embedding process, the projecting part 410, the projecting part 410 in the lower electrode 106, the lower electrode 106 in which at least one of the projecting parts 410, 421 or the recessed part 430 is embedded by the first embedding process. At least one of 421 and the recessed part 430 is embedded.

  In the convex portion embedding process, the convex portions 410 and 421 generated in the lower electrode 106 are embedded. Specifically, in the film formation layer formation process following the lower electrode formation process, at least one layer in the film formation layer 108 is formed by oblique deposition, vertical deposition, melt, pressure deposition, or thick film formation. By forming using a film method, the convex portions 410 and 421 are embedded. In this embodiment mode, it is assumed that the film formation layer 108 includes the protrusions 410 and 421 so that the above-described short circuit does not occur even when the protrusions 410 and 421 exist.

  The oblique vapor deposition method is one of film formation methods using vacuum vapor deposition, and vapor deposition (film formation) is performed obliquely with respect to the film formation target surface (film formation surface of the substrate) of the film formation target (substrate). This is a method of forming a film by attaching a material. Specifically, in this embodiment mode, a deposition (film formation) material is attached obliquely with respect to the thickness direction of the substrate 101.

  In film formation using the oblique vapor deposition method, the film formation target is rotated with respect to the film formation source. In addition, since the oblique deposition method allows the deposition material to wrap around and cover, it is possible to form a film deposition layer 108 (a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer) that does not require separate coating. It can also be used to form the upper electrode 107.

  The vertical vapor deposition method is one of film formation methods using vacuum vapor deposition, and is a vapor deposition (film formation) material from the front with respect to the film formation target surface (film formation surface of the substrate) of the film formation target (substrate). This is a method of forming a film by adhering. Specifically, in this embodiment mode, an evaporation (film formation) material is attached along the thickness direction of the substrate 101.

  Also in film formation using the vertical evaporation method, the film formation target is rotated with respect to the film formation source, with the opposing direction of the film formation source and the film formation target as the axial direction. Since vertical vapor deposition can prevent unnecessary wraparound of the vapor deposition material, it is used in film formation in which an organic material is applied in accordance with each light emission color in the production of a multicolor self-luminous panel.

  In the melt method, after forming at least one layer for forming the film formation layer 108, the film is melted by heating at a temperature equal to or higher than the glass transition point of the organic material forming the layer, and the convex portion 410, This is a method of embedding 421. In the case of using the melt method, the layers formed before the materials are melted in the substrate 101, the lower electrode 106, and the deposition layer 108 are formed using a material having a melting point higher than that of the material to be melted.

The pressure vapor deposition method is a method of performing vapor deposition in an atmosphere having a low degree of vacuum such as LP-OVPD (Low pressure organic vapor phase deposition) or a pressure adjusting gas (such as N ₂ ). In this method, vapor deposition is performed in a pressurized atmosphere. Specifically, the normal vacuum deposition is performed in a vacuum of 10 ⁻⁴ to 10 ⁻⁶ Pa, whereas a pressure adjusting gas is used in a low vacuum state or a pressurized state of 10 ⁻¹ to 10 ³ Pa. Evaporate. Since the pressure vapor deposition method is a vapor deposition method in a low vacuum state or a pressurized state, it is easy to wrap around the sample surface, and it is possible to reduce the occurrence of unevenness during film formation.

  The thick film formation method is a method in which at least one of the plurality of film formation layers 108 to be formed is formed thick. As the thickening layer, for example, a buffer layer using a polymer material is preferable, but the layer is not limited to this. When forming the buffer layer, a buffer layer is formed on the lower electrode 106 by coating or spin coating, and then a low molecular organic material including a light emitting layer is formed by vacuum deposition. Further, a high-density carrier layer doped with an electron acceptor and a low-density carrier layer above the high-density carrier layer are provided between the lower electrode 106 and the light-emitting layer, and the low-density carrier layer is formed thick. There is a way. As a method for forming a thick film, any of the above-described oblique deposition methods, vertical deposition methods, pressure deposition methods, and the like may be used.

  Further, as the convex portion embedding process, specifically, the convex portions 410 and 421 are encapsulated by polishing the surface of the lower electrode 106 using the lower electrode polishing method following the formation of the lower electrode 106. May be buried. In the present embodiment, it is assumed that the convex portions 410 and 421 are polished to such an extent that the above-described short circuit does not occur.

  The lower electrode polishing method is a method of polishing the surface of the lower electrode 106 after forming the lower electrode 106. The surface of the lower electrode 106 is smoothed by polishing or etching (regardless of physics or chemistry) the protrusions 410 caused by scratches on the substrate 101 or film formation defects in the lower electrode 106. The convex portion 421 generated due to the foreign matter 420 may be polished using a lower electrode polishing method.

  In addition, as the convex portion embedding process, the convex portions 410 and 421 are dissolved and removed by using the lower electrode chemistry or physical etching method, and the surface of the lower electrode 106 is smoothed to thereby remove the convex portions 410 and 421. May be embedded. In the present embodiment, embedding is performed by melting and removing the convex portions 410 and 421 to such an extent that the above-described short circuit does not occur. The lower electrode chemistry and physical etching methods are methods in which the surface and shape of an object to be etched are dissolved and removed chemically or electrochemically.

  In the recess embedding process, the recess 430 generated in the lower electrode 106 is embedded. Specifically, when forming the film formation layer 108 following the lower electrode formation step, at least one layer in the film formation layer 108 is formed by oblique deposition, vertical deposition, melt deposition, pressure deposition, and thick film formation. The recess 430 is embedded by forming using any one of the film methods. In this embodiment mode, it is assumed that after forming the film formation layer 108, the film formation layer 108 includes the recess 430 so that there is no portion where the recess 430 is exposed.

  Any of the convex embedding process and the concave embedding process may be performed first. That is, the various embedding methods described above may be used for the first embedding process or the second embedding process. However, the melt method is used only in the second embedding process in the case where the first embedding process and the second embedding process are sequentially performed.

  In the present embodiment, the first embedding process and the second embedding process are performed as separate processes, but the present invention is not limited to this. The first embedding process and the second embedding process may be performed simultaneously. However, in this case, the convex part embedding process and the concave part embedding process are performed using any one of oblique vapor deposition, vertical vapor deposition, and pressure vapor deposition.

  In the present embodiment, the embedding process including the first embedding process and the second embedding process is performed on the protrusions 410 and 421 and the recess 430 generated in the lower electrode 106. However, this is not a limitation. In other words, the third embedding process may be performed after the second embedding process.

  For example, after performing a convex embedding process as a first embedding process, and then performing a concave embedding process as a second embedding process, after performing a second embedding process, It is also possible to perform the convex portion embedding process again as the third embedding process. At this time, the convex embedding processing step as the third embedding processing step may use the same method as the method that performed the first embedding processing step, or may use another method.

  For example, after performing the recessed portion embedding process step as the first embedding process step, when performing the projecting portion embedding process step as the second embedding process step, after performing the second embedding process step, The recessed portion embedding process can be performed again as the third embedding process. At this time, the recessed embedding process as the third embedding process may use the same method as the method that performed the first embedding process, or may use another method.

  As described above, according to the method for manufacturing a self-luminous panel of the present embodiment, it is performed when the film formation layer 108 is formed on the sealing substrate 103 side of the lower electrode 106 formed on the substrate 101. The upper electrode 107 is formed after the convex portions 410 and 421 and the concave portion 430 in the lower electrode 106 are embedded by the convex portion embedding processing step and the concave portion embedding processing step.

  Thus, the convex part embedding process and the concave part embedding process are performed by combining the convex part embedding process for embedding the convex parts 410 and 421 and the concave part embedding process for embedding the concave part 430. , The embedding process specialized for each of the convex portions 410 and 421 and the concave portion 430 generated in the lower electrode 106 can be performed to reliably embed the convex portions 410 and 421 and the concave portion 430 in the lower electrode 106. it can. Thereby, a short circuit between the lower electrode 106 and the upper electrode 107 can be prevented.

  In addition, it is possible to prevent the occurrence of a leakage current due to a short circuit between the lower electrode 106 and the upper electrode 107 and to suppress the occurrence of defective products due to the generation of a leakage current due to a short circuit between the lower electrode 106 and the upper electrode 107. Yield reduction in manufacturing the light-emitting panel 100 can be suppressed. As a result, an increase in the manufacturing unit price of the self-luminous panel can be suppressed.

  For example, when the convex portion embedding process and the concave portion embedding process are performed separately, a method suitable for embedding the convex portions 410 and 421 and the concave portion 430 in the lower electrode 106 is used. The convex portions 410 and 421 and the concave portion 430 in the lower electrode 106 can be embedded. Thereby, the convex portions 410 and 421 and the concave portion 430 in the lower electrode 106 can be reliably embedded.

  On the other hand, for example, when the convex embedding process and the concave embedding process are performed at the same time, the convex embedding process and the concave embedding process are performed using the same method. Compared with the case where the processing step and the concave portion embedding processing step are performed separately, the time required for embedding the convex portions 410 and 421 and the concave portion 430 in the lower electrode 106 can be shortened, and the work can be simplified. . Thereby, it is possible to improve the working efficiency when manufacturing the self-luminous panel.

  Therefore, after performing a convex part embedding process, a convex part embedding process and a concave part embedding process can be reliably performed by performing a concave part embedding process. Thereby, the convex portions 410 and 421 and the concave portion 430 in the lower electrode 106 can be reliably embedded.

  For example, when the convex embedding process is performed again by the same method as the method of performing the convex embedding process or another method after performing the concave embedding process, the convex parts 410 and 421 are more It is securely embedded. Thereby, a short circuit between the lower electrode 106 and the upper electrode 107 can be prevented more reliably.

  Further, according to the method for manufacturing the self-luminous panel of the present embodiment, any one of the oblique vapor deposition method, the vertical vapor deposition method, the thick film deposition method, and the pressure vapor deposition method is used in the convex embedding process. Using at least one layer in the film formation layer or embedding the convex part by the lower electrode polishing method, in the concave embedding process step, oblique vapor deposition method, vertical vapor deposition method, melt method, thick film film formation method, At least one layer in the film formation layer can be formed by using any one of the pressure vapor deposition methods.

  Therefore, by using a method suitable for embedding the convex portions 410 and 421 and the concave portion 430 in the lower electrode 106, the convex portions 410 and 421 and the concave portion 430 in the lower electrode 106 are embedded, and a film formation layer is formed. Can be done. Thus, the convex portions 410 and 421 and the concave portion 430 in the lower electrode 106 can be reliably embedded without hindering the formation of the film formation layer.

  Therefore, the convex embedding process and the concave embedding process can be reliably performed by performing the convex embedding process after the concave embedding process. Thereby, the convex portions 410 and 421 and the concave portion 430 in the lower electrode 106 can be reliably embedded.

  On the other hand, for example, after performing the convex embedding process, after performing the concave embedding process again by the same method as the method of performing the concave embedding process or another method, the convex parts 410 and 421 Embedded more reliably. Thereby, a short circuit between the lower electrode 106 and the upper electrode 107 can be prevented more reliably.

  Further, according to the method for manufacturing the self-luminous panel of the present embodiment, any one of the oblique vapor deposition method, the vertical vapor deposition method, the thick film deposition method, and the pressure vapor deposition method is used in the recess embedding process. At least one layer in the film formation layer is used, and in the convex embedding process, any one of the oblique vapor deposition method, the vertical vapor deposition method, the melt method, the thick film deposition method, and the pressure vapor deposition method is used. At least one of the film formation layers can be formed.

  Therefore, by using a method suitable for embedding the convex portions 410 and 421 and the concave portion 430 in the lower electrode 106, the convex portions 410 and 421 and the concave portion 430 in the lower electrode 106 are embedded, and a film formation layer is formed. Can be done. Thus, the convex portions 410 and 421 and the concave portion 430 in the lower electrode 106 can be reliably embedded without hindering the formation of the film formation layer.

  According to the method for manufacturing the self-luminous panel of the present embodiment, the convex portion embedding process and the concave portion embedding process are performed by different methods, so that each of the convex portions 410 and 421 and the concave portion 430 in the lower electrode 106 is performed. In addition, a method suitable for embedding can be used, and unique advantages of each method can be exhibited, and the convex portions 410 and 421 and the concave portion 430 of the lower electrode 106 can be embedded by more various methods. Thereby, the convex portions 410 and 421 and the concave portion 430 in the lower electrode 106 can be embedded more reliably.

  Furthermore, according to the method for manufacturing the self-luminous panel of the present embodiment, the first embedding process performed when the film formation layer is formed on the sealing substrate side of the lower electrode 106 formed on the substrate. By the process and the second embedding process, the upper electrode 107 is formed after the convex portions 410 and 421 and the concave portion 430 in the lower electrode 106 are embedded.

  According to the method for manufacturing the self-luminous panel of the present embodiment, the first embedding process and the second embedding process are performed by different methods, so that the protrusions 410 and 421 and the recess 430 in the lower electrode 106 are performed. A method suitable for embedding each of the electrodes can be used, thereby exhibiting a unique advantage in each method, and embedding the convex portions 410, 421 and the concave portion 430 in the lower electrode 106 by various methods. Can do. Thereby, the convex portions 410 and 421 and the concave portion 430 in the lower electrode 106 can be embedded more reliably.

  Further, in the first embedding treatment step, at least one layer in the film formation layer is formed by using any one of an oblique vapor deposition method, a vertical vapor deposition method, a thick film deposition method, and a pressure vapor deposition method, or a lower electrode By smoothing the surface of the lower electrode by the polishing method, it is possible to embed at least one of the concave portion 430 and the convex portions 410 and 421 of the lower electrode 106 using an already established method. As a result, the work in the first embedding process can be stabilized and facilitated.

  In the second embedding process, at least one layer of the film-forming layer is formed using any one of an oblique vapor deposition method, a vertical vapor deposition method, a melt method, a thick film deposition method, and a pressure vapor deposition method. By doing so, it is possible to embed at least one of the concave portion 430 or the convex portions 410 and 421 of the lower electrode 106 by using an already established method. As a result, the work in the second embedding process can be stabilized and facilitated.

  In addition, according to the method for manufacturing a self-luminous panel of the present embodiment, the light-emitting performance of the organic EL element 102 can be stabilized by realizing the self-luminous element by the organic EL element 102. A stable self-luminous panel 100 can be manufactured. Note that the various effects described above are not limited to the self-light-emitting panel 100, and are also exhibited in the self-light-emitting panel 200.

  Examples 1 to 7 will be described below as specific examples of the manufacturing process of the self-luminous panel using the method of manufacturing the self-luminous panel of the present embodiment. In Examples 1 to 7, only the manufacturing process of the self-luminous element 102 will be described.

  In Example 1, a convex embedding process using the lower electrode polishing method is performed as the first embedding process, and a concave embedding process using the melt method is performed as the second embedding process. . In manufacturing the self-luminous element 102 in Example 1, first, an ITO film serving as the lower electrode 106 was formed in a predetermined shape on the surface of a transparent glass substrate as the substrate 101. Sputter deposition was used for forming the ITO film.

  Next, the surface of the ITO film was polished to a predetermined thickness. For polishing the surface of the ITO film, for example, a technique such as polishing, lapping or tape wrapping is used. Here, a convex embedding process using a lower electrode polishing method is performed as the first embedding process. When polishing the ITO film surface, the maximum height (Rmax) of the surface roughness defined in the definition and display (BO6O1) of the surface roughness defined in the Japanese Industrial Standard (JIS) is the surface of the ITO film. Polishing was performed so as to be 50 angstroms or less. Thereafter, the ITO film was patterned according to the electrode pattern to form the final lower electrode 106.

The glass substrate (substrate 101) on which the lower electrode 106 was formed was ultrasonically cleaned using a neutral detergent, acetone, and ethanol, and then pulled up from boiling ethanol and dried. The surface of the dried glass substrate was UV / O ₃ cleaned.

Next, a hole injection layer was formed on the lower electrode 106 of the glass substrate cleaned with UV / O ₃ using copper phthalocyanine (Cu—Pc). In forming the hole injection layer, an evaporation method was used. When forming the hole injection layer, a glass substrate was fixed to the substrate holder of the vacuum deposition apparatus, and the inside of the tank in the vacuum deposition apparatus was depressurized to 1 × 10 ⁻⁴ Pa or less. Thereafter, a hole transport layer was formed on the hole injection layer. In forming the hole transport layer, a triphenyldiamine compound (so-called TPD) was used to form a film by vapor deposition.

  Here, the entire glass substrate on which the hole transport layer was formed was heated to a temperature not lower than the melting point of TPD (Tg = 95 ° C.) and not higher than the melting point. Thereby, TPD which forms a positive hole transport layer fuse | melts, and it fuse | melts in the state which embedded the recessed part. Here, a recess embedding process using a melt method is performed as the second embedding process.

  In Example 1, for example, a hole transport layer formed of a material having a glass transition point of 95 ° C. was heated to about 150 ° C. The heating time for fusion was about 5 minutes. Heating was performed using a heater in a reduced pressure or vacuum chamber. The heating means is not limited to the heater, and may be a halide lamp, for example.

Next, a light emitting layer was formed on the hole transport layer. The light emitting layer was formed by vapor-depositing tris (8-hydroxynoline) aluminum complex (Alq ₃ ). An electron injection layer was formed on the light emitting layer. The electron injection layer was formed by evaporating Li ₂ O. Thus, the film formation layer 108 formed by the above steps was formed. Further, the upper electrode 107 was formed on the electron injection layer in the film formation layer 108. The upper electrode 107 was formed using Al. Al was formed to have a pattern along a direction orthogonal to the arrangement direction of the lower electrodes 106.

  According to the self-luminous panel manufactured as in Example 1, a short circuit between the lower electrode 106 and the upper electrode 107 could be prevented.

  In Example 2, the concave embedding process using the pressure vapor deposition method is performed as the first embedding process, and the convex embedding process using the melt method is performed as the second embedding process. Do it. In the second embodiment, the description of the same steps as those in the first embodiment will be omitted as appropriate. The same shall apply hereinafter.

In Example 2, a hole injection layer was formed on the lower electrode 106 which was formed in the same manner as Example 1 described above and the surface of the ITO film was not polished and was UV / O ₃ cleaned. In forming the hole injection layer, Cu—Pc was vapor-deposited by using a pressure vapor deposition method. The hole injection layer was formed in a state in which the substrate carried into the pressure vapor deposition film formation chamber whose pressure was adjusted to 100 Pa was fixed to a substrate holder provided in the pressure vapor deposition film formation chamber. Here, a concave embedding process using a pressure vapor deposition method is realized as the first embedding process.

Next, a hole transport layer was formed on the hole injection layer. The hole transport layer was formed of N-phenyl-p-phenylenediamine (PPD). The hole transport layer was formed by moving the substrate on which the hole injection layer was formed from the pressure deposition film formation chamber to the vacuum film formation chamber and then in the vacuum film formation chamber. At this time, the pressure in the vacuum film formation chamber was reduced to 1 × 10 ⁻⁴ Pa or less.

  Here, the whole glass substrate on which the hole transport layer was formed was heated for 15 minutes at 160 ° C. at a temperature not lower than the melting point of PPD (Tg = 150 ° C.) and not higher than the melting point. Thereby, PPD which forms a positive hole transport layer fuse | melts, and it fuse | melts in the state which embedded the convex part. Here, a convex embedding process using a melt method is performed as the second embedding process. Thereafter, the light emitting layer, the electron injection layer, and the upper electrode 107 were formed in the same manner as in Example 1 described above.

  According to the self-luminous panel manufactured as in Example 2, a short circuit between the lower electrode 106 and the upper electrode 107 could be prevented.

In Example 3, a convex embedding process using oblique deposition is performed as the first embedding process, and a concave embedding process using vertical deposition as the second embedding process. To do. In Example 3, Cu—Pc was vapor-deposited by using an oblique vapor deposition method when forming the hole injection layer on the lower electrode 106 formed in the same manner as in Example 2 described above. The hole injection layer was formed in a vacuum film forming chamber in which the pressure in the chamber was reduced to 1 × 10 ⁻⁴ Pa or less. Here, the convex part embedding process using the oblique vapor deposition method is realized as the first embedding process.

  Thereafter, a hole transport layer was formed on the hole injection layer using TPD and vertical vapor deposition. Here, the recessed portion embedding process using the vertical vapor deposition method is realized as the second embedding process. Thereafter, the light emitting layer, the electron injection layer, and the upper electrode 107 were formed in the same manner as in Example 1 described above.

  According to the self-luminous panel manufactured as in Example 3, a short circuit between the lower electrode 106 and the upper electrode 107 could be prevented.

  In Example 4, a concave embedding process using thick film deposition is performed as the first embedding process, and a convex embedding process using oblique deposition as the second embedding process. Perform the process. In Example 4, a buffer layer was formed on the lower electrode 106 formed in the same manner as Example 2 described above. In forming the buffer layer, a polyaniline derivative (PEDOT) coating solution dissolved in an organic solvent and doped with an acid was spin-coated. Then, after removing the coating liquid adhering to the terminal portion other than the display portion of the glass substrate by wiping, the glass substrate was heated using a hot plate and the polyaniline film (buffer layer) was formed by evaporating the solvent. . Here, a recess embedding process using thick film deposition is performed as the first embedding process.

Next, a hole transport layer was formed on the buffer layer. In forming the hole transport layer, an oblique deposition method was used. In the oblique deposition, the glass substrate on which the buffer layer was formed was transferred to a vacuum film formation chamber whose pressure was reduced to 1 × 10 ⁻⁴ Pa or less, and the glass substrate was mounted on the substrate holder.

  Thereafter, a hole transport layer was formed on the hole injection layer using TPD and vertical vapor deposition. Here, the recessed portion embedding process using the vertical vapor deposition method is realized as the second embedding process. Thereafter, the light emitting layer, the electron injection layer, and the upper electrode 107 were formed in the same manner as in Example 1 described above.

  According to the self-luminous panel manufactured according to Example 4, a short circuit between the lower electrode 106 and the upper electrode 107 could be prevented.

In Example 5, the concave embedding process using thick film deposition is performed as the first embedding process, and the convex embedding process using the melt method is performed as the second embedding process. Do it. In Example 5, a hole transport layer was formed on the polyaniline film (buffer layer) formed in the same manner as Example 4 described above. The hole transport layer was formed using TPD and using a vapor deposition method. In vapor deposition, the glass substrate was transported to a vacuum film formation chamber whose pressure was reduced to 1 × 10 ⁻⁴ Pa or less, and the glass substrate was mounted on a substrate holder. Here, a recess embedding process using thick film deposition is performed as the first embedding process.

  Thereafter, as in Example 1, the entire glass substrate on which the buffer film has been formed is heated. Here, a convex embedding process using a melt method is performed as the second embedding process. Thereafter, the light emitting layer, the electron injection layer, and the upper electrode 107 were formed in the same manner as in Example 1 described above.

  According to the self-luminous panel manufactured as in Example 5, a short circuit between the lower electrode 106 and the upper electrode 107 could be prevented.

  In Example 6, a convex embedding process using the lower electrode polishing method is performed as the first embedding process, and a concave embedding process using thick film formation as the second embedding process. Perform the process. In the sixth embodiment, the surface of the ITO film is polished as in the first embodiment. Here, a convex embedding process using a lower electrode polishing method is performed as the first embedding process.

  Next, a high carrier density layer was formed on the hole injection layer formed in the same manner as described above. In forming the high carrier density layer, F4-TCNQ was doped into α-NPD as an electron-accepting substance and evaporated. Thereafter, using a vapor deposition method, only α-NPD was deposited to form a low carrier density layer (buffer film layer). The low carrier density layer (buffer film layer) was formed thicker than the hole transport layer. Thereafter, the light emitting layer, the electron injection layer, and the upper electrode 107 were formed in the same manner as in Example 1 described above.

  According to the self-luminous panel manufactured as in Example 6, a short circuit between the lower electrode 106 and the upper electrode 107 could be prevented.

In Example 7, a convex embedding process using a pressure vapor deposition method is performed as the first embedding process, and a thick film is formed as the second embedding process (also referred to as a buffer film method). The recessed portion embedding treatment process using is performed. In Example 7, as in Example 2 described above, a hole injection layer was formed on a glass substrate on which the lower electrode 106 was formed and the surface was UV / O ₃ cleaned. In forming the hole injection layer, Cu—Pc was vapor-deposited using a pressure vapor deposition method. In forming the hole injection layer, the pressure deposition film forming chamber was adjusted to 100 Pa, and the glass substrate was fixed to the pressure deposition film forming chamber on the substrate holder. Here, a convex embedding process using a pressure vapor deposition method is performed as the first embedding process.

  Next, a high carrier density layer was formed on the hole injection layer formed in the same manner as described above. In forming the high carrier density layer, F4-TCNQ was doped into α-NPD as an electron-accepting substance and evaporated. Thereafter, using a vapor deposition method, only α-NPD was deposited to form a low carrier density layer (buffer film layer). The low carrier density layer (buffer film layer) was formed thicker than the hole transport layer. Here, a recess embedding process using thick film deposition is performed as the second embedding process. Thereafter, the light emitting layer, the electron injection layer, and the upper electrode 107 were formed in the same manner as in Example 1 described above.

  According to the self-luminous panel manufactured as in Example 7, a short circuit between the lower electrode 106 and the upper electrode 107 could be prevented.

It is a vertical side view which shows the self-light-emitting panel manufactured using the manufacturing method of the self-light-emitting panel in this Embodiment. It is a vertical side view which shows another self-light-emitting panel manufactured using the manufacturing method of the self-light-emitting panel in this Embodiment. It is a flowchart which shows the flow of the process based on the general manufacturing method of a self-light-emitting panel. It is a vertical side view which shows the convex part produced after lower electrode formation. It is a vertical side view which shows the convex part produced after lower electrode formation. It is a vertical side view which shows the recessed part produced after lower electrode formation.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Self-light-emitting panel 101 Substrate 102 Self-light-emitting element 103 Sealing base material 106 Lower electrode 107 Upper electrode 108 Film-forming layer

Claims (15)

In the method for manufacturing a self-light-emitting panel in which a self-light-emitting element provided with a film-forming layer including a light-emitting layer between a lower electrode and an upper electrode is provided on a substrate,
A lower electrode forming step of forming the lower electrode on the substrate;
A film formation layer forming step of forming a film formation layer on the lower electrode formed by the lower electrode formation step;
In the film formation layer forming step, a convex portion embedding treatment step of embedding a convex portion in the lower electrode formed by the lower electrode forming step,
In the film formation layer forming step, a recessed portion embedding treatment step of embedding a recessed portion in the lower electrode formed by the lower electrode forming step,
An upper electrode forming step of forming an upper electrode on top of the film formation layer formed by the film formation layer formation step;
A method for manufacturing a self-luminous panel, comprising:   The method for manufacturing a self-luminous panel according to claim 1, wherein the convex embedding process and the concave embedding process are performed separately.   The method for manufacturing a self-luminous panel according to claim 1, wherein the convex embedding process and the concave embedding process are performed simultaneously.   3. The method for manufacturing a self-luminous panel according to claim 1, wherein the recessed portion embedding processing step is performed after the protruding portion embedding processing step.   The convex part embedding process is performed again by the same method as the method of performing the convex part embedding process or another method after the concave part embedding process is performed. Method of self-luminous panel. The convex portion embedding treatment step includes forming at least one layer in the film formation layer using any one of an oblique vapor deposition method, a vertical vapor deposition method, a thick film deposition method, and a pressurized vapor deposition method, or a lower electrode polishing method. To smooth the surface of the lower electrode,
The recess embedding treatment step includes forming at least one layer in the film formation layer using any one of an oblique vapor deposition method, a vertical vapor deposition method, a melt method, a thick film deposition method, and a pressure vapor deposition method. The self-luminous panel manufacturing method according to claim 4 or 5,   The method for manufacturing a self-luminous panel according to claim 1, wherein the convex embedding process is performed after the concave embedding process.   The concave portion embedding treatment step is performed again by the same method as the method of performing the concave portion embedding processing step or after another method after performing the convex portion embedding processing step. A method for manufacturing a self-luminous panel. The recess embedding process includes forming at least one layer in the film formation layer using any one of an oblique vapor deposition method, a vertical vapor deposition method, a thick film deposition method, and a pressure vapor deposition method, or a lower electrode polishing method. Smooth the surface of the lower electrode,
The convex portion embedding treatment step includes forming at least one layer in the film formation layer using any one of an oblique vapor deposition method, a vertical vapor deposition method, a melt method, a thick film formation method, and a pressure vapor deposition method. The method for manufacturing a self-luminous panel according to claim 7 or 8.   The method for manufacturing a self-luminous panel according to claim 1, wherein the convex embedding process and the concave embedding process are performed by different methods. In the method for manufacturing a self-light-emitting panel in which a self-light-emitting element provided with a film-forming layer including a light-emitting layer between a lower electrode and an upper electrode is provided on a substrate,
A lower electrode forming step of forming the lower electrode on the substrate;
A film formation layer forming step of forming a film formation layer on the lower electrode formed by the lower electrode formation step;
A first embedding treatment step of embedding at least one of a concave portion or a convex portion in the lower electrode formed by the lower electrode forming step in the film formation layer forming step;
At the time of the film formation layer forming step, at least one of the concave portion or the convex portion in the lower electrode with respect to the lower electrode in which at least one of the concave portion or the convex portion is embedded by the first embedding processing step. A second embedding process step of embedding,
An upper electrode forming step of forming an upper electrode on top of the film formation layer formed by the film formation layer formation step;
A method for manufacturing a self-luminous panel, comprising:   The method for manufacturing a self-luminous panel according to claim 11, wherein the first embedding process and the second embedding process are performed by different methods.   The first embedding treatment step includes forming at least one layer in the film formation layer by using one of an oblique vapor deposition method, a vertical vapor deposition method, a thick film formation method, and a pressure vapor deposition method, or polishing a lower electrode. The method of manufacturing a self-luminous panel according to claim 11 or 12, wherein the surface of the lower electrode is smoothed by a method.   In the second embedding treatment step, at least one layer of the film formation layer is formed using any one of an oblique vapor deposition method, a vertical vapor deposition method, a melt method, a thick film deposition method, and a pressure vapor deposition method. 13. The method for manufacturing a self-luminous panel according to claim 11 or 12, wherein: The method of manufacturing a self-luminous panel according to any one of claims 1 to 14, wherein the self-luminous element is an organic EL element.

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