CN1841761A - Self luminescent panel and method for fabricating same - Google Patents
Self luminescent panel and method for fabricating same Download PDFInfo
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- CN1841761A CN1841761A CNA2006100648984A CN200610064898A CN1841761A CN 1841761 A CN1841761 A CN 1841761A CN A2006100648984 A CNA2006100648984 A CN A2006100648984A CN 200610064898 A CN200610064898 A CN 200610064898A CN 1841761 A CN1841761 A CN 1841761A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
There provide a spontaneous light emitting panel reducing wiring resistance of an upper electrode by arranging an auxiliary wiring electrode, securing excellent sealing property and a method to fabricate the same.A spontaneous light emitting element 2 is composed of a lower electrode 11 formed on a substrate 10 directly or through another layer, a light emitting function layer 12 formed on the lower electrode 11, and the upper electrode 13 formed on the light emitting function layer 12. The spontaneous light emitting panel 1 arranged on the substrate 10 is composed of a sealing member 20 arranged on the spontaneous light emitting element 2, an adhesion layer 21 adhering the sealing member on the spontaneous light emitting element 2, and the auxiliary wiring electrode 22 connected to the upper electrode 13. The auxiliary wiring electrode 22 formed on the spontaneous light emitting element 2 side of the adhesion layer 21 is connected to the upper electrode 13 by making the adhesion layer 21 adhere to the upper electrode 13.
Description
Technical field
The present invention relates to self-emission panel and manufacture method thereof.
Background technology
Has organic EL (OEL; Organic Electroluminescence: organic electroluminescent) self-emission device such as element is as the self-emission panel of luminous key element, as carrying out flat panel display and comparing the demonstration that can carry out low power consumption and high brightness with needs liquid crystal display backlight, can realize that the device of novel display formats such as electronic paper demonstration extremely expects simultaneously.
The self-emission device that becomes the luminous key element of this self-emission panel has the basic structure that sandwiches the semiconductor layer with pn knot between anode (hole injecting electrode) and negative electrode (electron injection electrode), this semiconductor layer is under the situation of low molecule-type organic EL, the stepped construction that employing comprises the organic layer of luminescent layer forms, under the situation of polymer electrolyte organic EL, adopt the organic layer of the structure of individual layer or stacked plurality of layers of double polarity material to form.Then, apply voltage between two electrodes by anode and negative electrode, make from anode and inject/be transported to the hole in the organic layer and inject/be transported to electronics combination again in this organic layer (for example luminescent layer) in the organic layer from negative electrode, and from emitting energy in conjunction with the energized condition that obtained again, thereby present luminous by this.
This self-emission panel forms by following operation: directly or across other layers the side in aforesaid anode or the negative electrode is being carried out graphically as lower electrode on the substrate, stacked light emitting functional layer on the light-emitting zone that uses dielectric film this figure to be carried out limit is stated the opposing party in the male or female as upper electrode at this light emitting functional layer upper strata prestack then.At this moment, in the time will constituting the dot matrix of self-emission device, because aforementioned upper electrode is also used as the distribution electrode of a line, thereby when the resistance of upper electrode is high, because the voltage that this resistance causes descends, make in the central authorities of panel differently to the voltage that each self-emission device applied, can not obtain good display image with the end.
And, upper electrode is adopting under the situation of the top light emitting mode of this upper electrode side-draw bright dipping, require good photopermeability, adopting from taking out under the situation of bottom-emission mode of light with the substrate-side of this upper electrode opposition side, require good light reflective, thereby, has the problem that may not adopts the low material of resistance surely to restricted according to the selected material of each side.
Particularly, under the situation of top light emitting mode, as the thin metal film that upper electrode adopted, indium tin oxide) or IZO (Indium Zinc Oxide: the stacked film of the nesa coating resistance height of comparing with metal electrode such as indium-zinc oxide) perhaps Bao metal film and ITO (Indium Tin Oxide:, and, though this nesa coating can reduce resistance value by improving film-forming temperature as everyone knows, if but consideration is to the influence of the light emitting functional layer of lower floor, then be difficult to film forming at high temperature, the problem that produces is, as previously mentioned, the voltage that imposes on self-emission device is in the end of panel with central portion produces difference and display performance is descended.
In order to eliminate this problem, the prior art that following patent documentation 1 is put down in writing has been proposed.This patent documentation has following record: as shown in Figure 1, on the substrate that constitutes by insulator J1, form the organic EL that constitutes by the electrode J2 that comprises reflecting surface, organic EL layer J3 and transparency electrode J4, this organic EL is provided with seal J5 and is arranged on the lip-deep auxiliary electrode J6 of seal J5, and this auxiliary electrode J6 is connected with transparency electrode J4 by the electric conductor J7 that is made of anisotropic conductive film.
[patent documentation 1] TOHKEMY 2002-33198 communique
According to aforementioned prior art, because auxiliary electrode J6 and the transparency electrode J4 that is made of nesa coating are connected in parallel and play a role as the distribution electrode, and auxiliary electrode J6 is formed on seal J5 side, thereby not restricted by the thermal endurance of organic EL layer J3, can reduce resistance value.Like this, can apply even voltage, can obtain the image quality preferable image to transparency electrode J4.
Yet, in aforementioned prior art, as shown in Figure 1, owing on seal J5, directly form auxiliary electrode J6, and it is connected with transparency electrode J4 as upper electrode by the electric conductor J7 that is made of anisotropic conductive film, thereby between transparency electrode J4 and seal J5, form easily slight void, and make the cementability of seal J5 bad, be in the state that enters the element deterioration factors such as moisture from the sidepiece of seal J5 easily.And, in seal J5, behind the figure of formation auxiliary electrode J6 and electric conductor J7, must carry out the bonding sealing process of substrate-side that makes seal J5 and be formed with organic EL in addition.Although in the specification of prior art, have can be in the space description of potting resin, yet because new operation must be set, thereby have the problem that manufacturing process becomes numerous and diverse.And the problem that has is, has bubble etc. to sneak in the resin in filling process, makes sealing property impaired.
And, adopting under the situation of the top light emitting mode of seal J5 side-draw bright dipping, owing to aforesaid slight void is present in the emitting light path as differing from of refractive index, thereby can between the light-emitting zone of organic EL and the outgoing opening that limits by electric conductor J7, look and recognize delicate departing from, produce the problem that is difficult to see the outgoing image.
Summary of the invention
The present invention is the example of this problem of reply as problem.Promptly, the objective of the invention is in the self-emission panel of wiring resistance that the auxiliary ligand line electrode reduces upper electrode is set, can guarantee excellent sealing performance, can eliminate the numerous and diverse of manufacturing process, even and under the situation that adopts the top light emitting mode, also can carry out preferable image display etc.
In order to achieve the above object, self-emission panel of the present invention and manufacture method thereof have the structure of following each independent claims at least.
[claim 1] a kind of self-emission panel, on substrate, be arranged with self-emission device, this self-emission device comprises: on aforesaid base plate directly or across the lower electrode of other layers formation, be formed on the one or more layers at least light emitting functional layer on this lower electrode, and be formed on upper electrode on this light emitting functional layer, it is characterized in that, this self-emission panel has: be configured in the containment member on the aforementioned self-emission device, make the sealing member be bonded in adhesive linkage on the aforementioned self-emission device and the auxiliary ligand line electrode that is connected with aforementioned upper electrode; On aforementioned containment member and opposed faces aforementioned self-emission device, be formed with aforementioned adhesive linkage, be formed on aforementioned auxiliary ligand line electrode on the aforementioned self-emission device side surface of this adhesive linkage by making aforementioned adhesive linkage and aforementioned upper electrode fluid-tight engagement, thereby be connected with aforementioned upper electrode.
The manufacture method of [claim 4] a kind of self-emission panel, this self-emission panel is arranged with self-emission device on substrate, this self-emission device comprises: on aforesaid base plate directly or across the lower electrode of other layers formation, be formed on the one or more layers at least light emitting functional layer on this lower electrode, and be formed on upper electrode on this light emitting functional layer, it is characterized in that this manufacture method has following operation: on aforesaid base plate, form aforementioned self-emission device; On containment member and the opposed faces aforementioned self-emission device that is disposed on the aforementioned self-emission device, form adhesive linkage, and on the aforementioned self-emission device side surface of this adhesive linkage, form the auxiliary ligand line electrode; And make aforementioned adhesive linkage fluid-tight engagement on aforementioned self-emission device, aforesaid base plate and aforementioned containment member are fitted, so that aforementioned auxiliary ligand line electrode is connected with aforementioned upper electrode.
Description of drawings
Fig. 1 is the key diagram of prior art.
Fig. 2 is the profile of structure of the self-emission panel of expression an embodiment of the invention.
Fig. 3 is the key diagram that the manufacture method to the self-emission panel of embodiments of the present invention describes.
Fig. 4 is the key diagram (plane illustrates the key diagram of manufacturing process) that the manufacture method to the self-emission panel of embodiments of the present invention describes.
Fig. 5 is the profile of structure of the self-emission panel of expression another embodiment of the invention.
Symbol description
1: self-emission panel; 2: self-emission device; The 3:TFT element; 4: planarization film; 5: dielectric film; 10: substrate; 11: lower electrode; 12: light emitting functional layer; 13: upper electrode; 20: containment member; 21: adhesive linkage; 22: the auxiliary ligand line electrode
Embodiment
Below, with reference to accompanying drawing embodiments of the present invention are described.
Fig. 2 is the profile of structure of the self-emission panel of expression an embodiment of the invention.The self-emission panel 1 of embodiments of the present invention is arranged with self-emission device 2 on substrate 10, this self-emission device 2 comprises: on substrate 10 directly or across the lower electrode 11 of other layers formation, be formed on the one or more layers at least light emitting functional layer 12 on the lower electrode 11, and be formed on the upper electrode 13 on the light emitting functional layer 12.
In more detail, on substrate 10, be formed with the TFT element 3 of active driving usefulness, and be formed with planarization film 4, so that cover TFT element 3 with connecting hole 4A.On this planarization film 4, lower electrode 11 is carried out graphically being connected with TFT element 3 by connecting hole 4A.And, dielectric film 5 is carried out graphically, so that cover the edge portion of this lower electrode 11 and limit light-emitting zone.
Then, the lower electrode 11 upper strata prestacks in the light-emitting zone that is limited by dielectric film 5 are stated light emitting functional layer 12, and stacked then upper electrode 13 is to cover aforementioned light emitting functional layer 12.Here, show the structure example of TFT element 3 as the active driving of driving element, however embodiments of the present invention be not limited thereto, can have structure with the passive drive of the lower electrode 11 of strip and upper electrode 13 cross-over configuration.
In self-emission panel 1 with this prerequisite structure, in embodiments of the present invention, have: be configured in the containment member 20 on the self-emission device 2, the low-resistance auxiliary ligand line electrode 22 that makes containment member 20 be bonded in the adhesive linkage 21 on the self-emission device 2 and be connected with upper electrode 13, on containment member 20 and opposed faces self-emission device 2, be formed with adhesive linkage 21, be formed on auxiliary ligand line electrode 22 on self-emission device 2 side surfaces of adhesive linkage 21 by making adhesive linkage 21 and upper electrode 13 fluid-tight engagement, thereby be connected with upper electrode 13.
That is, make under the state of auxiliary ligand line electrode 22 in being embedded in adhesive linkage 22 that the wiring resistance of upper electrode 13 reduces, be connected with upper electrode 13.Then, adhesive linkage 21, so that absorb concavo-convex on the upper electrode 13, is attached to containment member 20 on the self-emission device 2 on upper electrode 13 then with the thickness fluid-tight engagement of regulation.
And, photopermeability or light reflective or the light photopermeability that take out each member of side of the self-emission panel 1 of embodiments of the present invention by suitably selecting lower electrode 11 or upper electrode 13, can adopt from the bottom-emission mode of substrate 10 side-draw bright dippings, on the contrary, also can adopt from the top light emitting mode of containment member 20 side-draw bright dippings.
According to the self-emission panel 1 of this execution mode,, thereby can suppress the formation of space part because fluid-tight engagement the adhesive linkage 21 bonding with containment member 20 on self-emission device 2.Therefore, can improve the bonding force of containment member 20, and can interdict the entering of the deterioration factor of self-emission device 2 reliably, improve sealing property at self-emission device 2.
And, even adopting under the situation of the top light emitting mode of containment member 20 side-draw bright dippings, owing in the outgoing path of light, do not have the space yet, thereby invisibility outgoing image not.
And, by low-resistance auxiliary ligand line electrode 22 is set,, can obtain the image quality preferable image even, also can apply even voltage to each self-emission device 2 adopting under the high situation of material of resistance value as upper electrode 13.
And as a kind of form of the self-emission panel 1 of embodiments of the present invention, auxiliary ligand line electrode 22 can be formed on the dielectric film 5 that the light-emitting zone to self-emission device 2 limits.Like this, for example adopting under the situation of the top light emitting mode of containment member 20 side-draw bright dippings, owing in light is emitted the path, do not form auxiliary ligand line electrode 22, thereby there is no need to consider its photopermeability, can improve the material of auxiliary ligand line electrode 22 and select the degree of freedom.And, as long as the material of auxiliary ligand line electrode 22 adopts the high material (black material etc.) of light absorption, just can make corresponding dielectric film 5 tops and the auxiliary ligand line electrode 22 that forms plays a role as black matrix, but the high image of display resolution.
And as another form of the self-emission panel 1 of embodiments of the present invention, auxiliary ligand line electrode 22 can form by electric conducting material is dispersed in the resin with adhesive linkage 21 same materials.Like this, because the part that is formed with auxiliary ligand line electrode 22 also can form and equally with adhesive linkage 21 have bonding force, thereby can further improve the cementability of containment member 20, can further improve sealing property at self-emission device 2.
Fig. 3 is the key diagram (enclose same-sign with 2 same area, omit a part of repeat specification) that the manufacture method to the self-emission panel of embodiments of the present invention describes.In this manufacture method, at first, carry out the element that on substrate 10, forms aforementioned self-emission device 2 and form operation S1.This is a known procedure, at the figure that forms lower electrode 11 on the substrate 10 or on the aforementioned planarization film 4, and on this lower electrode 11, dielectric film 5 is carried out graphically, so that limit the opening of light-emitting zone, in film formation process, form light emitting functional layer 12 and upper electrode 13 afterwards.
Form operation S1 with this element and carry out containment member preparatory process S2 simultaneously.In sealing member preparatory process S2, on containment member 20 and opposed faces self-emission device 2 that is disposed on the self-emission device 2, form adhesive linkage 21, and on self-emission device 2 side surfaces of adhesive linkage 21, form auxiliary ligand line electrode 22.
Here, auxiliary ligand line electrode 22 can form figure according to the figure of dielectric film 5 as previously mentioned, and this auxiliary ligand line electrode 22 also can form by electric conducting material is dispersed in the resin with adhesive linkage 21 same materials.
Specifically, on containment member 20, make bonding agent carry out membranization, thereby form adhesive linkage 21 according to the size corresponding with sealing area.At this moment, also can carry out silk screen printing and form adhesive linkage 21, the bonding agent sheet of film like is attached to forms adhesive linkage 21 on the containment member 20 bonding agent cream.Under the situation of the bonding agent sheet that uses film like, can simplify working process.
Then, on this adhesive linkage 21, the conductive paste that works as auxiliary ligand line electrode 22 is carried out the figure coating.As its method, preferably adopt the dry method of silk screen printing and transfer printing etc.By adopting dry method that the auxiliary ligand line electrode 22 that directly contacts on upper electrode 13 is carried out graphically can getting rid of the element deterioration factors such as moisture.Here employed conductive paste is to make electric conducting material be dispersed in material in the resin, as the resin of main material as previously mentioned, and can be identical with adhesive linkage 21.
And, on a face of adhesive linkage 21, form after the auxiliary ligand line electrode 22, also can on another face, form the barrier layer.In this case, for example, as adhesive linkage 21, adopt resin film xeroprinting and transfer printing on one face, to form auxiliary ligand line electrode 22, the containment member 20 of metal forming etc. is attached on another face of resin film.
Afterwards, carry out the operation S3 that substrate 10 and containment member 20 are fitted.In this bonding process S3, make adhesive linkage 21 fluid-tight engagement on self-emission device 2, auxiliary ligand line electrode 22 is connected with upper electrode 13.At this moment, the position alignment of substrate 10 and containment member 20 must be made that the figure of auxiliary ligand line electrode 22 is consistent with desired locations (for example on the dielectric film 5).Then, when carrying out heating and pressurizing, fit, make adhesive linkage 21 complete fluid-tight engagement on self-emission device 2.
At this moment, the conductive paste that uses in order to form aforementioned auxiliary ligand line electrode 22 is different because of the dispersion of electric conducting material with the stream temperature of the bonding agent of adhesive linkage 21, heating and pressurizing during by applying is embedded into it in adhesive linkage 21 under the state of the graphics shape of keeping conductive paste.
After applying, implement heat hardening operation S4, carry out the cure process of adhesive linkage 21.Can seal self-emission device 2 reliably like this.
Fig. 4 is the key diagram that the plane illustrates aforementioned manufacturing process.Shown in this figure (a), on the planarization film on the substrate 10 4, form the figure of lower electrode 11.Be formed with the driving distribution L of the TFT element (omitting diagram) that is connected with lower electrode 11 for 4 times at planarization film
1And, be formed with wiring lead L in the end of substrate 10
0
Then, shown in this figure (b), make that light-emitting zone S is carried out the dielectric film 5 that opening limits is graphical.Carry out the forming mask of light emitting functional layer (omit diagram) according to this light-emitting zone S, finally carry out the film forming of upper electrode 13, so that cover whole.At this moment, the end of upper electrode 13 and wiring lead L
0Connect.
On the other hand,, as previously mentioned, form adhesive linkage 21, form the figure of the auxiliary ligand line electrode 22 shown in this figure (d) thereon for containment member 20.Here, auxiliary ligand line electrode 22 has the figure graph of a correspondence with dielectric film 5, and carry out in the end graphical so that when fitting and wiring lead L
0Overlap.
Like this, by making the substrate 10 that is formed with self-emission device 2 and containment member 20, can obtain the self-emission panel 1 of embodiments of the present invention by aforementioned such applying.
Fig. 5 is the self-emission panel 1 of embodiments of the present invention, show with the passive drive is prerequisite, (this figure (a) represents the I-I profile of this figure (b) to the key diagram of the structure example of the situation of employing bottom-emission mode, this figure (b) represents the II-II profile of this figure (a), encloses same-sign with the above stated specification same section).The self-emission panel 1 of this execution mode forms the lower electrode 11 of strip on substrate 10, form dielectric film 5 on this lower electrode 11, so that limit light-emitting zone, stacked light emitting functional layer 12 on the light-emitting zone that is limited by dielectric film 5.Then, upper electrode 13 is graphically come film forming according to strip, so as with the bar direction quadrature of lower electrode 11.
By contrast, in containment member 20, form adhesive linkage 21 as previously mentioned, on the surface of self-emission device 2 sides of this adhesive linkage 21, auxiliary ligand line electrode 22 is carried out graphically.Here and since from the bottom-emission mode of substrate 10 side-draw bright dippings as prerequisite, thereby form the figure of auxiliary ligand line electrode 22, so that auxiliary ligand line electrode 22 is connected on the upper electrode 13 on the light-emitting zone.
Below, describe as the concrete example of the situation of aforementioned self-emission device 2 adopting organic EL.
At first, organic EL is described, generally speaking, organic EL adopts the structure that sandwiches organic EL functional layer between anode (hole injecting electrode) and negative electrode (electron injection electrode).By to two electrode application voltage, make from anode inject/be transported to the hole in organic EL functional layer and the electronics (luminescent layer) in this layer that injects/be transported in organic EL functional layer from negative electrode luminous in conjunction with obtaining again.Light emitting functional layer 12 that below is illustrated in stacked lower electrode 11 on the substrate 10, constitutes by organic EL functional layer and upper electrode 13 and the concrete structure and the material example of the organic EL (self-emission device 2) that obtains.
For substrate 10, particularly under the situation of the structure that adopts bottom-emission mode shown in Figure 5, preferably have the tabular of the transparency, the substrate of film like, can use glass or plastics as material.Under the situation of the structure that adopts the aforementioned top illumination mode, the transparency of substrate 10 is had not a particular requirement.
Be set to negative electrode for lower electrode 11 and 13, one of upper electrodes, another is set to anode.In this case, anode can use the high material of work function to constitute, and can use chromium (Cr), molybdenum (Mo), nickel (Ni), platinum metal films such as (Pt), perhaps the nesa coating of oxidized metal such as ITO, IZO film etc.And negative electrode can use the low material of work function to constitute, and particularly, can use alkali metal (Li, Na, K, Rb, Cs), alkaline-earth metal (Be, Mg, Ca, Sr, Ba), low metal, its compound of the such work function of rare earth metal or comprise their alloy.And, all use under the situation of transparent material formation at lower electrode 11 and upper electrode 13, also can adopt and emit the structure that the opposite electrode side of side is provided with reflectance coating with light.
And, the extraction electrode L that is drawn from lower electrode 11 or upper electrode 13
0Be the distribution electrode that is provided with for self-emission panel 1 is connected with driver elements such as the IC that it is driven, drivers, preferably use low-resistance metal material or its alloys such as Ag, Cr, Al.
Generally speaking, use ITO, IZO etc. to form lower electrode 11 and extraction electrode Lo, and adopt methods such as evaporation or sputter to form the film that lower electrode 11 and extraction electrode Lo use, adopt photoetching process etc. to form figure.About lower electrode 11 and extraction electrode Lo (extraction electrode that particularly needs low resistanceization); can adopt 2 layers of structure that obtain at low resistive metal such as the stacked Ag of the bottom of aforementioned ITO, IZO etc., Ag alloy, Al, Cr, the high material of non-oxidizability such as Cu, the Cr of perhaps further stacked protective layer as Ag etc., Ta and the 3-tier architecture that obtains.
Organic EL functional layer (light emitting functional layer 12) as institute's film forming between lower electrode 11 and upper electrode 13, lower electrode 11 as anode, and under the situation of upper electrode 13 as negative electrode, generally be hole transporting layer/luminescent layer/electron supplying layer stepped construction (lower electrode 11 as negative electrode, and under the situation of upper electrode 13 as anode, this lamination order is opposite), yet luminescent layer, hole transporting layer, each layer of electron supplying layer not only can be an individual layer, and can be provided with by stacked multilayer, hole transporting layer and electron supplying layer can omit wherein one deck arbitrarily, also can omit bilayer and only adopt luminescent layer.And,, can insert organic function layers such as hole injection layer, electron injecting layer, hole blocking layer, electronic barrier layer according to purposes as organic EL functional layer.
The material of organic EL functional layer can suitably be selected according to the purposes of organic EL.Below carry out illustration, yet be not limited thereto.
As hole transporting layer,, can from existing known compound, select to use compound arbitrarily as its material as long as have the high function of hole degree of excursion.As concrete example, can use porphyrin compounds, 4 such as copper phthalocyanine, 4 '-two [N-(1-naphthyl)-N-phenyl amino]-biphenyl aromatic nitrile bases such as (NPB), 4-(two-p-methylphenyl amino)-4 '-organic materials such as stilbene compounds, triazole derivative, styrylamine compound such as [4-(two-p-methylphenyl amino) styryl] talan.And the macromolecule that also can use low molecular cavity conveying to be distributed to organic material in the macromolecule such as Merlon disperses the class material.Preferably the glass transition temperature material higher than the temperature that sealing resin is heating and curing for example can be enumerated 4,4 '-two [N-(1-naphthyl)-N-phenyl amino]-biphenyl (NPB).
Luminescent layer can use known luminescent material, as concrete example, can use 4,4 '-two (2,2 '-diphenylacetylene)-biphenyl aromatic series two methylidyne compounds, 1 such as (DPVBi), styryl benzene compound, 3-(4-diphenyl)-4-phenyl-5-tert-butyl-phenyl-1,2 such as two (2-methyl styrene base) benzene of 4-, fluorescence organic material, (oxine) aluminium complex (Alq such as 4-triazole triazole derivatives such as (TAZ), anthraquinone derivative, fluorenone derivatives
3) etc. the fluorescence organo-metallic compound, poly-to macromolecular materials such as styrene (PPV) class, poly-fluorenes class, polyvinylcarbazole (PVK) classes, can be used to from the luminous organic material of the phosphorescence of triplet excitons such as platinum complex and iridium complex (special table 2001-520450).Can only constitute, also can contain hole transporting material, electron transport materials, additive (executing body, acceptor etc.) or photism dopant etc. by above-mentioned luminescent material.And, they can be distributed in macromolecular material or the inorganic material.
As long as electron supplying layer has the function that is delivered to luminescent layer from negative electrode institute injected electrons, can from existing known compound, select to use compound arbitrarily as its material.As concrete example, can use the metal complex, metal phthalocyanine of organic materials such as fluorenone derivatives that nitro replaces, anthraquinone bismethane derivative, oxine derivative etc.
As required; can be inserted in the electron injecting layer that constitutes by materials such as lithium fluoride, lithias between electron supplying layer and the upper electrode; and making light emitting functional layer impaired when being suppressed at the upper electrode film forming is purpose, the protective layer that is made of materials such as alkaline-earth metal and alkaline earth oxides can be set.
Above-mentioned hole transporting layer, luminescent layer, electron supplying layer can use rubbing methods such as spin-coating method, infusion process, the wet method for making of print processes such as ink-jet method, silk screen print method etc., and perhaps the dry process of vapour deposition method, laser transfer method described later etc. forms.
And the self-emission device 2 that is made of organic EL can form single organic EL, and the graphic structure that also can have expectation constitutes a plurality of pixels.Under latter instance, this display mode can be monochromatic luminous, also can be above multicolor luminous of 2 looks or 2 looks, particularly in order to realize multicolor luminous organic EL panel, can use following mode to carry out, that is: comprise the mode (branch be coated with mode) of the mode of the formation 3 kind light emitting functional layer corresponding in interior formation 2 looks or the light emitting functional layer more than 2 looks with RGB; Make colour filter or based on the mode (CF mode, CCM mode) of the monochromatic light emitting functional layer combination of the color conversion layer of fluorescent material and white or blueness etc.; Electromagnetic wave irradiation to the first-class a plurality of luminous modes (photobleaching mode) that realize of the light-emitting zone of monochromatic light emitting functional layer; And the low molecule organic material that makes different colors film forming on different films in advance, the hot transfer printing by laser is transferred to a laser transfer mode on the substrate etc.
As containment member 20,, can use nitride such as SiN, AlN, GaN, SiO as glass substrate, metal substrate or metal forming or diaphragm seal
2, Al
2O
3, Ta
2O
5, oxides such as ZnO, GeO, nitrogen oxide such as SiON, nitrogen carbides such as SiCN, metal pentafluoride compound, metal film etc.
As the material that is used for adhesive linkage 21, can adopt the material that mainly has binding function, and have the materials with function of the concavo-convex planarization that makes bottom, specifically, can adopt the bonding agent that constitutes by macromolecular material.If enumerate the material example, but example goes out the solid type of light such as epoxy resin, acrylic resin, silicones, heat curing-type, two-solution curing type, thermoplastic resin; Polyimides; Polyureas; Contain the polymer of acrylate etc.But this is not particularly limited.
As the formation material of auxiliary ligand line electrode 22, preferably use the material that can form by xeroprinting method and transfer printing, for example, can be set forth in the conductive paste of sneaking into carbon or graphite etc. in the resin binder etc.Yet, so long as the resistance value material lower than upper electrode 13 just can adopt, and not stick to material especially.
Below, the concrete example of manufacture method of the self-emission panel of embodiments of the invention is shown.Certainly, the invention is not restricted to this embodiment.
The ITO of the Cr of employing sputtering method formation 200nm and 110nm adopts photoetching process to obtain the lower electrode of bar figure as reflectance coating on the substrate of glass.Then, on lower electrode, photoresist AZ6112 (chemical industry system is answered in Tokyo) is formed figure, as the dielectric film that limits light-emitting zone.
Use comprise the aqueous solution of surfactant and pure water with this substrate cleaning after, use Sa Muke international research (the Samco International of institute, Inc.) the UV ozone that carried out 10 minutes of system UV ozone remover UV-1 is cleaned, and afterwards substrate is put in the vacuum tank.Reaching arrival vacuum degree 1 * 10
-6Behind the Torr, make the film forming speed film forming 25nm with per second 0.5nm as the CuPc of hole injection layer by the resistance heating vacuum film formation.Then, make α-NPD carry out the resistance heating vacuum film formation with the film forming speed of per second 0.5nm equally as hole transporting layer.Then, make Alq as luminescent layer
3Film forming speed with per second 0.5nm carries out the thick resistance heating vacuum film formation of 60nm.Then, make as the LiF of electron injecting layer and carry out the thick resistance heating vacuum film formation of 0.5nm with the film forming speed of per second 0.01nm.
Above organic layer and LiF form the bar that covers lower electrode, always smaller or equal to 1 * 10
-6Film forming under the high vacuum of Torr.
At last, implement the blocking mask (shadow mask) that negative electrode is used in a vacuum, with the stacked film of the aluminium of the strip of the bar pattern, orthogonal of lower electrode and IZO as upper electrode, aluminium carries out the thick resistance heating vacuum film formation of 5nm with the speed of per second 1nm, and IZO adopts sputtering method to carry out the thick film forming of 100nm with the speed of per second 10nm.
On substrate, form a plurality of organic ELs like this.
On the other hand, in the operation of separating with substrate, attach the high resin film with about 50 μ m thickness of moisture resistance on the containment member that the glass substrate by the about 0.16mm of thickness constitutes, for example epoxy resin forms adhesive linkage.On this adhesive linkage, use the conductive paste of having sneaked into carbon, when carrying out degasification, carry out silk screen printing and form the auxiliary ligand line electrode according to the trellis diagram shape.
Then, with input containment member and substrate in the glove box, and aligned position makes that the upper electrode on the substrate can be connected with auxiliary ligand line electrode on the containment member, uses laminating apparatus, and substrate and containment member are fitted at the sealing operation that has been full of nitrogen atmosphere.Afterwards, heat and make adhesive linkage sclerosis.
According to the embodiments of the present invention and the embodiment of above explanation,, can improve the display performance of self-emission panel by the wiring resistance that the auxiliary ligand line electrode reduces upper electrode is set.And, owing to make the adhesive linkage that is formed on the containment member auxiliary ligand line electrode is connected with upper electrode with the upper electrode fluid-tight engagement, thereby on upper electrode, do not form the space, can improve the bonding force of containment member, can guarantee excellent sealing performance, and can carry out reliably being connected of auxiliary ligand line electrode and upper electrode.
And, because auxiliary ligand line electrode and can carrying out simultaneously with the applying of substrate and containment member being connected of upper electrode, thereby can eliminate the numerous and diverse of manufacturing process.And,,, the auxiliary ligand line electrode is played a role as black matrix even when adopting the top light emitting mode, also the auxiliary ligand line electrode can be set with having obstacle in light-emitting zone by on the dielectric film that limits light-emitting zone, connecting the auxiliary ligand line electrode.And, owing to do not have the space in the light emitting light path on upper electrode, thereby can look well and recognize light-emitting zone, even under the situation that adopts the top light emitting mode, also can carry out preferable image display.
Claims (9)
1. self-emission panel, on substrate, be arranged with self-emission device, this self-emission device comprises: on aforesaid base plate directly or across the lower electrode of other layers formation, be formed on the one or more layers at least light emitting functional layer on this lower electrode, and be formed on upper electrode on this light emitting functional layer, it is characterized in that
This self-emission panel has: be configured in the containment member on the aforementioned self-emission device, make the sealing member be bonded in adhesive linkage on the aforementioned self-emission device and the auxiliary ligand line electrode that is connected with aforementioned upper electrode;
On aforementioned containment member and opposed faces aforementioned self-emission device, be formed with aforementioned adhesive linkage, be formed on aforementioned auxiliary ligand line electrode on the aforementioned self-emission device side surface of this adhesive linkage by making aforementioned adhesive linkage and aforementioned upper electrode fluid-tight engagement, be connected with aforementioned upper electrode.
2. self-emission panel according to claim 1 is characterized in that, aforementioned auxiliary ligand line electrode is formed on the dielectric film of the light-emitting zone that limits aforementioned self-emission device.
3. self-emission panel according to claim 1 and 2 is characterized in that, aforementioned auxiliary ligand line electrode forms by electric conducting material is dispersed in the resin with aforementioned adhesive linkage same material.
4. the manufacture method of a self-emission panel, this self-emission panel is arranged with self-emission device on substrate, this self-emission device comprises: on aforesaid base plate directly or across the lower electrode of other layers formation, be formed on the one or more layers at least light emitting functional layer on this lower electrode, and be formed on upper electrode on this light emitting functional layer, it is characterized in that this manufacture method has following operation:
On aforesaid base plate, form aforementioned self-emission device;
On containment member and the opposed faces aforementioned self-emission device that is disposed on the aforementioned self-emission device, form adhesive linkage, and on the aforementioned self-emission device side surface of this adhesive linkage, form the auxiliary ligand line electrode; And
Make aforementioned adhesive linkage fluid-tight engagement on aforementioned self-emission device, aforesaid base plate and aforementioned containment member are fitted, so that aforementioned auxiliary ligand line electrode is connected with aforementioned upper electrode.
5. the manufacture method of self-emission panel according to claim 4 is characterized in that, aforementioned auxiliary ligand line electrode forms figure according to the figure of the dielectric film of the light-emitting zone that limits aforementioned self-emission device.
6. according to the manufacture method of claim 4 or 5 described self-emission panels, it is characterized in that aforementioned auxiliary ligand line electrode forms by electric conducting material is dispersed in the resin with aforementioned adhesive linkage same material.
7. according to the manufacture method of any described self-emission panel in the claim 4～6, it is characterized in that, adopt xeroprinting or transfer printing to form aforementioned auxiliary ligand line electrode.
8. according to the manufacture method of any described self-emission panel in the claim 4～7, it is characterized in that the adhesive linkage by adhered film shape on aforementioned containment member and opposed faces aforementioned self-emission device forms aforementioned adhesive linkage.
9. according to the manufacture method of any described self-emission panel in the claim 4～8, it is characterized in that, carry out on one side aforesaid base plate and aforementioned containment member are carried out the operation that heating and pressurizing is carried out aforementioned applying on one side, make aforementioned adhesive linkage sclerosis by thermmohardening afterwards.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005098386A JP2006278241A (en) | 2005-03-30 | 2005-03-30 | Spontaneous light emitting panel and manufacturing method of the same |
| JP2005098386 | 2005-03-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1841761A true CN1841761A (en) | 2006-10-04 |
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ID=37030680
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006100648984A Pending CN1841761A (en) | 2005-03-30 | 2006-03-20 | Self luminescent panel and method for fabricating same |
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| Country | Link |
|---|---|
| JP (1) | JP2006278241A (en) |
| KR (1) | KR20060106682A (en) |
| CN (1) | CN1841761A (en) |
| TW (1) | TW200635433A (en) |
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| CN105514138A (en) * | 2014-10-08 | 2016-04-20 | 株式会社日本显示器 | Display device and manufacturing method of the display device |
| CN105552101A (en) * | 2014-10-22 | 2016-05-04 | 三星显示有限公司 | Organic light-emitting display apparatus |
| US10340319B2 (en) | 2008-10-16 | 2019-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Organic light-emitting device having a color filter |
| WO2020220442A1 (en) * | 2019-04-29 | 2020-11-05 | 深圳市华星光电半导体显示技术有限公司 | Auxiliary electrode transfer structure and manufacture method for display panel |
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| US7812523B2 (en) | 2005-11-15 | 2010-10-12 | Samsung Electronics Co., Ltd. | Display device having an auxiliary electrode for improved common voltage and fabricating method thereof |
| KR101376319B1 (en) * | 2007-07-27 | 2014-03-20 | 주식회사 동진쎄미켐 | A sealing method for display element |
| JP2009070815A (en) * | 2007-08-21 | 2009-04-02 | Fujifilm Corp | Organic electroluminescent display device |
| KR20110111747A (en) | 2010-04-05 | 2011-10-12 | 삼성모바일디스플레이주식회사 | Organic light emitting diode display |
| WO2012090903A1 (en) | 2010-12-28 | 2012-07-05 | Ｎｅｃライティング株式会社 | Organic electroluminescent lighting device and method for manufacturing said lighting device |
| TW201304133A (en) * | 2011-03-10 | 2013-01-16 | Sumitomo Chemical Co | Active matrix display device and method of making same |
| WO2013141190A1 (en) * | 2012-03-23 | 2013-09-26 | コニカミノルタ株式会社 | Sealing element for organic electroluminescence element and method for manufacturing organic electroluminescence element |
| JP5991490B2 (en) | 2013-03-22 | 2016-09-14 | 株式会社ジャパンディスプレイ | Organic electroluminescence display device |
| JP6978149B1 (en) * | 2020-03-31 | 2021-12-08 | 株式会社写真化学 | Manufacturing method and manufacturing device of EL display device, and manufacturing method of electronic device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4545385B2 (en) * | 2002-03-26 | 2010-09-15 | 株式会社半導体エネルギー研究所 | Method for manufacturing light emitting device |
| JP4216008B2 (en) * | 2002-06-27 | 2009-01-28 | 株式会社半導体エネルギー研究所 | LIGHT EMITTING DEVICE AND ITS MANUFACTURING METHOD, AND VIDEO CAMERA, DIGITAL CAMERA, GOGGLE TYPE DISPLAY, CAR NAVIGATION, PERSONAL COMPUTER, DVD PLAYER, ELECTRONIC GAME EQUIPMENT, OR PORTABLE INFORMATION TERMINAL HAVING THE LIGHT EMITTING DEVICE |
-
2005
- 2005-03-30 JP JP2005098386A patent/JP2006278241A/en active Pending
-
2006
- 2006-03-20 CN CNA2006100648984A patent/CN1841761A/en active Pending
- 2006-03-22 KR KR1020060025957A patent/KR20060106682A/en not_active Application Discontinuation
- 2006-03-30 TW TW095111312A patent/TW200635433A/en unknown
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| CN105552101B (en) * | 2014-10-22 | 2020-12-22 | 三星显示有限公司 | Organic light emitting display device |
| WO2020220442A1 (en) * | 2019-04-29 | 2020-11-05 | 深圳市华星光电半导体显示技术有限公司 | Auxiliary electrode transfer structure and manufacture method for display panel |
| US11527734B2 (en) | 2019-04-29 | 2022-12-13 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Auxiliary electrode transfer structure and manufacturing method for display panel |
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| TW200635433A (en) | 2006-10-01 |
| JP2006278241A (en) | 2006-10-12 |
| KR20060106682A (en) | 2006-10-12 |
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