JP2006237410A - Mounting method for semiconductor element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a mounting method which has small thermal hysteresis, and in which a semiconductor element is only pressed against a circuit board with a low load, and a conduction defect caused by shearing strain is reducible even if there is a difference in coefficient of thermal expansion between the circuit board and semiconductor element. <P>SOLUTION: A 2nd electrode 4 having a recess and an uncured insulating film layer 11 arranged outside the 2nd electrode 4 are formed on a wiring board 3 corresponding to a 1st projection electrode 2 formed on the semiconductor element 1. While the 1st electrode 2 is inserted into the recess of the 2nd electrode 4, the insulating film layer 11 on the wiring board 3 is shrunk to be cured while the 2nd electrode 4 is pressed against the outer peripheral side of the 1st electrode 2. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for mounting a semiconductor element on a wiring board.

  In FIG. 1 of (Patent Document 1), even if there is a difference in thermal expansion coefficient between the circuit board and the semiconductor element, conduction failure caused by shear strain due to the engagement between the protruding electrode and the connection electrode is reduced. For this purpose, a recess is formed in the connection electrode formed on the circuit board, and a protruding electrode in which all or part of the semiconductor element to be mounted is embedded in the recess is formed between the circuit board and the semiconductor element. A technique for filling and mounting a sealing resin is shown.

Further, FIG. 3 of (Patent Document 2) shows a bump mounting recess formed at the mounting position of the circuit board for the purpose of easy mounting, strong mounting state, and easy removal, and the semiconductor element has a volume by heating. The bumps are expanded from the contracted state by forming bumps formed of a shape memory alloy that contracts, engaging the bumps with the bump mounting recesses while the volume is contracted by heating, and then cooling. Shows a technique for connecting and fixing to a bump mounting recess. The electrical connection is conduction between the bottom of the bump mounting recess and the tip of the bump.
JP 2002-170852 A Japanese Patent Laid-Open No. 2002-208607

  However, in the configuration of the above (Patent Document 1), the mounting state is maintained not only by the engagement between the protruding electrode and the connection electrode but also by the sealing resin filled between the circuit board and the semiconductor element, so that stable mounting is possible. In order to obtain the state, there is a problem that the gap between the protrusion electrode and the connection electrode is reduced, and the semiconductor element must be pressed against the circuit board until the sealing resin is cured. In the case of a semiconductor element having a thin package, the semiconductor element is destroyed if the pressing force during the period until the sealing resin is cured is not appropriate.

  In addition, in (Patent Document 2), it is necessary to heat the pump so that the pump contracts, and there is a problem that the thermal history becomes large. In addition, the semiconductor element is formed over a period until the bump is sufficiently cooled and the bump expands. There is a problem that must be pressed against the circuit board. In the case of a semiconductor element having a thin package, the semiconductor element is destroyed.

  The present invention has a less thermal history than the prior art, and a very good mounting state can be obtained just by pressing the semiconductor element against the circuit board with a low load during the mounting work as in the past, and between the circuit board and the semiconductor element. It is an object of the present invention to provide a method for mounting a semiconductor element that can reduce poor conduction caused by shear strain even if there is a difference in thermal expansion coefficient.

  According to a first aspect of the present invention, there is provided a method of mounting a semiconductor element on the wiring board such that the first electrode formed on the semiconductor element and the second electrode formed on the wiring board are in a conductive state. In mounting, the second electrode in which a concave portion is formed corresponding to the convex first electrode formed in the semiconductor element at the mounting position of the semiconductor element on the wiring board, and the outside of the second electrode An uncured insulating film layer disposed on the second electrode is formed, and the insulating film layer of the wiring board is contracted in a state where the first electrode is inserted into the concave portion of the second electrode, so that the outer peripheral side of the first electrode It hardens | cures in the state which pressed the said 2nd electrode.

  According to a second aspect of the present invention, there is provided a method for mounting a semiconductor element, wherein the wiring of the semiconductor element is performed so that a first electrode formed on the semiconductor element and a second electrode formed on a wiring board are in a conductive state. When mounting on a substrate, the semiconductor element has a recess formed in the semiconductor element corresponding to the convex second electrode formed at the mounting position of the wiring substrate, and on the outside of the first electrode. An uncured insulating film layer is formed, and the insulating film layer of the semiconductor element is contracted in a state where the second electrode is inserted into the concave portion of the first electrode, and the outer peripheral side of the second electrode is It hardens | cures in the state which pressed the 1st electrode.

  According to a third aspect of the present invention, there is provided the semiconductor element mounting method according to the first aspect, wherein at least a part of the surface roughness of the inner peripheral surface of the second electrode in which the recess is formed is formed on the semiconductor element. The surface roughness of the first electrode is made rougher.

According to a fourth aspect of the present invention, there is provided a semiconductor element mounting method according to the first aspect, wherein the tip of the first electrode is made thinner than the base end.
According to a fifth aspect of the present invention, there is provided a method for mounting a semiconductor element according to the first aspect, wherein the concave portion of the second electrode is made wider than the back end.

  The semiconductor element mounting method according to claim 6 of the present invention is the method for mounting a semiconductor element according to claim 1, wherein the first electrode is inserted into the recess of the second electrode before the first electrode is inserted into the recess of the second electrode. Before inserting a material, an adhesive, a conductive material, or a material such as cream solder is put into the recess of the second electrode.

  In the mounting body according to claim 7 of the present invention, the first electrode has a convexly formed semiconductor element, and a concave portion is formed at the mounting position of the semiconductor element on the wiring board corresponding to the first electrode. And a wiring board on which an insulating film layer disposed outside the second electrode is formed, and a conductive material is deposited inside a recess formed in the uncured insulating film layer. The insulating film layer of the wiring board is contracted and cured in a state where the first electrode is inserted into the concave portion of the second electrode formed by pressing the second electrode against the outer peripheral side of the first electrode. It is mounted in a conductive state.

  According to another aspect of the present invention, there is provided a mounting body including a semiconductor element having a first electrode formed in a concave shape and an insulating film layer disposed outside the first electrode, and a mounting position of the semiconductor element. And a wiring board on which a convex second electrode is formed corresponding to the first electrode, and formed by depositing a conductive material inside the concave portion formed in the uncured insulating film layer. The insulating film layer of the semiconductor element is contracted and cured in a state where the second electrode is inserted into the concave portion of the first electrode, and the first electrode is pressed against the outer peripheral side of the second electrode and mounted in a conductive state. It is characterized by that.

  According to the semiconductor element mounting method of the first or second aspect of the present invention, a concave portion is formed in which the tip of the convex electrode provided on one of the semiconductor element and the wiring board is provided on the other. The uncured insulating film layer disposed outside the electrode in which the concave portion is formed is contracted and hardened so that the electrode in which the deformed concave portion is formed is on the outer peripheral side of the convex electrode. A good mounted state can be obtained.

The semiconductor element mounting method of the present invention will be described below based on specific embodiments.
(Embodiment 1)
1 to 3 and FIG. 12A show (Embodiment 1) of the present invention.

FIG. 1 shows the steps of the mounting method of the present invention in which mounting is performed so that the first electrode 2 formed on the semiconductor element 1 and the second electrode 4 formed on the wiring board 3 are in a conductive state.
First, in the semiconductor element 1 shown in FIG. 1A, the first electrode 2 is formed in the step shown in FIG.

  As shown in FIGS. 2A and 2B, a resist 6 formed so as to cover the terminal electrode 5 on the side where the terminal electrode 5 of the semiconductor element 1 is formed is selectively irradiated with ultraviolet light through a mask 7. Exposure by (UV). Here, each of the masks 7 is formed with a transmission window 8 above the terminal electrode 5. The exposed resist 6 is developed to remove the uncured portion, and a hole 9 reaching the terminal electrode 5 is formed as shown in FIG.

  Next, as shown in FIG. 2D, Au is sputtered inside the hole 9 to form an Au film 2b. Further, the Au film 2b is electroplated with Au to fill the inside of the hole 9 with Au, and the Au film 2b on the resist 6 is removed, so that the state shown in FIG. 2 (e) is shown in FIG. 2 (f). The resist 6 is removed to form the semiconductor element 1 having the convex first electrode 2 shown in FIG. Here, each first electrode 2 has a cylindrical shape.

Further, the second electrode 4 is formed on the wiring substrate 3 shown in FIG. 1A by the process shown in FIG.
As shown in FIGS. 3A and 3B, an uncured insulating film layer 11 is formed on the side of the wiring board 3 on which the connection electrode 10 is formed so as to cover the connection electrode 10, and on that, the FIG. The resist 12 formed as shown in (c) is selectively exposed to ultraviolet light (UV) through a mask 13. Here, each of the masks 13 is formed with a transmission window 14 above the connection electrode 10. The exposed resist 12 is developed to remove the uncured portion and removed as shown in FIG. 3D, and then the insulating film layer 11 is selectively etched to connect as shown in FIG. A hole 15 reaching the electrode 10 is formed.

  Next, as shown in FIG. 3 (f), Au is evaporated over the inside of the hole 15 to form an Au film 16. Further, the resist 12 is removed as shown in FIG. 3G, and the second electrode 4 with the recesses formed as shown in FIG. 1A and the uncured material arranged outside the second electrode 4 are shown. The wiring substrate 3 on which the insulating film layer 11 is formed is formed. Here, an epoxy resin was used as the insulating film layer 11, and the thickness of the second electrode 4 was 1.0 μm. The thickness range of the second electrode 4 may be 0.1 μm to 5.0 μm. FIG. 12A shows a plan view.

  The first electrode 2 of the semiconductor element 1 manufactured in this way is inserted into the second electrode 4 of the wiring board 3 as shown in FIG. 1B, and for example, the wiring board 3 is heated to form an uncured insulating film. Layer 11 is cured. When curing begins, the insulating film layer 11 contracts and the second electrode 4 is compressed inward by the contracted insulating film layer 11.

  By this compression, the second electrode 4 is deformed and pressed against the outer peripheral side of the first electrode 2 to obtain a reliable conduction state. In this state, even if there is a difference in thermal expansion coefficient between the wiring board 3 and the semiconductor element 1, conduction failure due to shear strain can be reduced as compared with the conventional case.

(Embodiment 2)
FIG. 4 shows (Embodiment 2) of the present invention.
In FIG. 1, the second electrode 4 has the same diameter from the opening 4a to the back end, but in FIG. 4A, the opening 4a of the second electrode 4 is slightly wider than the back end 4b.

When configured in this way, it is easy to insert the tip of the first electrode 2 into the second electrode 4 and the workability is good. FIG. 4B shows a mounting completion state in this case.
(Embodiment 3)
FIG. 5 shows (Embodiment 3) of the present invention.

  In FIG. 1, the first electrode 2 has the same diameter from the distal end to the proximal end, but in FIG. 5A, the distal end 2 a of the first electrode 2 is formed to be slightly thin. For example, the chamfering of the corner of the tip of the first electrode 2 is performed.

When configured in this way, it is easy to insert the tip of the first electrode 2 into the second electrode 4 and the workability is good. FIG. 5B shows a mounting completion state in this case.
(Embodiment 4)
FIG. 6 shows (Embodiment 4) of the present invention.

  In FIG. 1, the first electrode 2 has the same diameter from the front end to the base end, and the second electrode 4 has the same diameter from the opening 4a to the back end 4b of the recess, but in FIG. The tip of the second electrode 4 is slightly narrowed, and the opening 4a of the second electrode 4 is slightly wider than the back end 4b.

When configured in this way, the tip of the first electrode 2 can be more easily inserted into the second electrode 4 and the workability is good. FIG. 6B shows the mounting completion state in this case.
(Embodiment 5)
FIG. 7 shows (Embodiment 5) of the present invention.

  In FIG. 1, the inner peripheral surface of the second electrode 4 is as smooth as the outer peripheral surface of the first electrode 2, but in FIG. 7A, the inner peripheral surface of the second electrode 4 is the outer periphery of the first electrode 2. The surface is rougher than the surface roughness. FIG. 7B shows a state of completion of mounting in this case, and the inner peripheral surface of the second electrode 4 comes into contact with the first electrode 2 more reliably and is effective in reducing contact resistance.

Note that the same can be applied to (Embodiment 2) to (Embodiment 4).
(Embodiment 6)
FIG. 8 shows (Embodiment 6) of the present invention.

  Here, as shown in FIG. 8 (a), the inner peripheral surface of the second electrode 4 is as smooth as the outer peripheral surface of the first electrode 2 from the opening 4a, and then continues to the back end 4b. The inner peripheral surface is formed to be rougher than the surface roughness of the outer peripheral surface of the first electrode 2. FIG. 8B shows a state where the mounting is completed in this case. The tip of the first electrode 2 can be easily inserted into the second electrode 4, and a better electrical connection can be obtained.

Note that the same can be applied to (Embodiment 2) to (Embodiment 4).
(Embodiment 7)
9 and 12 (b) show (Embodiment 7) of the present invention.

  In FIG. 1, each second electrode 4 formed on the wiring board 3 is formed in an independent recess as shown in FIG. 12A, but in this embodiment, FIG. 9A and FIG. As shown in (b), the Au second electrode 4 formed by sputtering and vapor deposition is formed inside the concave portion 17 common to the second electrodes 4. The second electrode 4 includes a horizontal portion 4h that is in close contact with the upper surface of the terminal electrode 10 and a side surface portion 4v that is formed perpendicular to the horizontal portion 4h. An uncured insulating film layer 11 is formed outside the second electrode 4.

  The tip of the first electrode 2 of the semiconductor element 1 manufactured as shown in FIG. 2 is inserted into the wiring board 3 thus manufactured as shown in FIG. 9B, and the wiring board 3 is heated, for example. The uncured insulating film layer 11 is cured. When curing begins, the insulating film layer 11 contracts and the second electrode 4 is compressed inward by the contracted insulating film layer 11.

  By this compression, the side surface portion 4v of the second electrode 4 is deformed and pressed against the outer peripheral side of the first electrode 2, and a reliable conduction state is obtained. FIG. 9C shows a completed state of mounting in this case, and in this state, even if there is a difference in thermal expansion coefficient between the wiring board 3 and the semiconductor element 1, the conduction failure due to shear strain is smaller than in the conventional case. Reduced.

The same applies to (Embodiment 2) to (Embodiment 7).
(Embodiment 8)
FIG. 10 shows (Embodiment 8) of the present invention.

  In FIG. 1, when the first electrode 2 of the semiconductor element 1 is inserted into the second electrode 4 of the wiring substrate 3, nothing is put in the recess of the second electrode 4. As shown in FIG. 10 (a), before inserting the first electrode 2 into the recess of the second electrode 4, an appropriate amount of an adhesive material, conductive material, or material such as cream solder is put into the recess of the second electrode 4. Thus, in the mounting completion state shown in FIG. 10 (b), an appropriate amount of the material 11 can be put in the recess to stably maintain a better conduction state.

The same applies to (Embodiment 2) to (Embodiment 7).
In each of the embodiments described above, the first electrode 2 has a cylindrical shape. However, the first electrode 2 can be similarly implemented even if it is a triangular prism, a quadrangular prism, or a polygonal prism having more than that.

(Embodiment 9)
FIG. 11 shows (Embodiment 9) of the present invention.
In FIG. 1, the convex first electrode 2 is formed on the semiconductor element 1, and the second electrode 4 having a concave portion is provided on the wiring board 3. However, the convex second electrode 40 is provided on the connection electrode 10 of the wiring board 3. Even if the first electrode 20 having a recess is provided in the semiconductor element 1, the same can be implemented. Specifically, as shown in FIG. 11A, the first electrode 20 in which a concave portion is formed in the semiconductor element 1 corresponding to the convex second electrode 40 formed at the mounting position of the wiring board 3. And forming the uncured insulating film layer 11 disposed outside the first electrode 20 and inserting the second electrode 40 into the recess of the first electrode 20 as shown in FIG. For example, the semiconductor element 1 is heated to cure the uncured insulating film layer 11. When curing starts, the insulating film layer 11 contracts and the first electrode 20 is compressed inward by the contracted insulating film layer 11.

  By this compression, the first electrode 20 is deformed and pressed against the outer peripheral side of the second electrode 40 to obtain a reliable conduction state. FIG. 11C shows a state where the mounting is completed in this case, and in this state, even if there is a difference in thermal expansion coefficient between the wiring board 3 and the semiconductor element 1, conduction failure due to shear strain is reduced as compared with the conventional case. did it.

  It should be noted that (Embodiment 2) to (Embodiment 8) can be implemented in the same manner (Embodiment 9) on the convex electrode and the electrode having a recess.

  The present invention is particularly effective when used for flip chip mounting and the like.

Process drawing of (Embodiment 1) of the mounting method of the semiconductor element of this invention Process of forming first electrode of the embodiment Process of forming second electrode of the embodiment Process diagram of principal part of (embodiment 2) of semiconductor device mounting method of the present invention Process diagram of principal part of (embodiment 3) of semiconductor device mounting method of the present invention Process diagram of principal part of (embodiment 4) of semiconductor device mounting method of the present invention Process diagram of principal part of (embodiment 5) of semiconductor device mounting method of the present invention Process diagram of principal part of (embodiment 6) of semiconductor device mounting method of the present invention Process diagram of principal part of (embodiment 7) of semiconductor device mounting method of the present invention Principal part process diagram of (Embodiment 8) of mounting method of semiconductor element of the present invention Principal part process diagram of (Embodiment 9) of semiconductor device mounting method of the present invention Plan views of (Embodiment 1) and (Embodiment 7) of the semiconductor element mounting method of the present invention

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Convex-shaped 1st electrode 2a The tip of 1st electrode 2b Au film 3 Wiring board 4 The 2nd electrode which has a recessed part 4a The opening part of 2nd electrode 4b The back end of 2nd electrode 4h 2nd electrode 4 horizontal portion 4 v side surface of second electrode 4 5 terminal electrode 6 resist 7 mask 8 transmission window 9 hole 10 connection electrode 11 uncured insulating film layer 12 resist 13 mask 14 transmission window 15 hole 16 Au film 17 second electrode 4 common concave portion 18 Adhesive material or conductive material or material 20 such as cream solder First electrode 40 having concave portion Convex second electrode

Claims (8)

When mounting the semiconductor element on the wiring board so that the first electrode formed on the semiconductor element and the second electrode formed on the wiring board are in a conductive state,
The second electrode having a concave portion corresponding to the convex first electrode formed in the semiconductor element and the outside of the second electrode are disposed at the mounting position of the semiconductor element on the wiring board. Form an uncured insulating film layer,
A semiconductor element that is cured in a state in which the insulating film layer of the wiring substrate is contracted in a state where the first electrode is inserted into a recess of the second electrode and the second electrode is pressed against an outer peripheral side of the first electrode. Implementation method. When mounting the semiconductor element on the wiring board so that the first electrode formed on the semiconductor element and the second electrode formed on the wiring board are in a conductive state,
Corresponding to the convex second electrode formed at the mounting position of the wiring board, the semiconductor element has the first electrode in which a concave portion is formed and an uncured material disposed outside the first electrode. An insulating film layer is formed, and the first electrode is pressed against the outer peripheral side of the second electrode by contracting the insulating film layer of the semiconductor element in a state where the second electrode is inserted into the recess of the first electrode. A method for mounting a semiconductor element that is cured in a state. The method for mounting a semiconductor element according to claim 1, wherein the surface roughness of at least a part of the inner peripheral surface of the second electrode in which the recess is formed is made rougher than the surface roughness of the first electrode formed in the semiconductor element. The method for mounting a semiconductor element according to claim 1, wherein the tip of the first electrode is made thinner than the base end. The semiconductor element mounting method according to claim 1, wherein the shape of the concave portion of the second electrode is wider than the back end. The method for mounting a semiconductor element according to claim 1, wherein a material such as an adhesive, a conductive material, or cream solder is placed in the recess of the second electrode before the first electrode is inserted into the recess of the second electrode. A semiconductor element in which the first electrode is formed in a convex shape;
The wiring board includes the second electrode in which a recess is formed corresponding to the first electrode at the mounting position of the semiconductor element, and the wiring board in which an insulating film layer disposed outside the second electrode is formed. The insulating film of the wiring board in a state where the first electrode is inserted into the concave portion of the second electrode formed by depositing a conductive material inside the concave portion formed in the uncured insulating film layer. A mounting body in which a layer is contracted and cured, and the second electrode is pressed against the outer peripheral side of the first electrode and mounted in a conductive state. A semiconductor element in which a concavely formed first electrode and an insulating film layer disposed outside the first electrode are formed;
A wiring board having a convex second electrode formed corresponding to the first electrode at a mounting position of the semiconductor element, and a conductive material inside the concave portion formed in the uncured insulating film layer. The insulating film layer of the semiconductor element is contracted and cured in a state where the second electrode is inserted into the concave portion of the first electrode formed by vapor deposition, and the first electrode is pressed against the outer peripheral side of the second electrode. Mounting body mounted in a conductive state.

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