JP2006237085A - Semiconductor wafer bonding method and apparatus thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor wafer bonding method capable of applying a wax on the entire of the rear surface of a semiconductor wafer uniformly in shape and thickness, and an apparatus thereof. <P>SOLUTION: Immediately before applying a wax to the rear surface of a silicon wafer W in a wax application section 15 of a semiconductor wafer bonding device 10 (S104), a prebaking section 14 prebakes the silicon wafer W to a predetermined temperature (S103) to control the temperature of the silicon wafer W, and consequently, control the temperature (viscosity) of the wax to be applied to the silicon wafer W. In this way, the wax can be applied to the entire rear surface of the silicon wafer W with a uniform shape and a uniform thickness. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor wafer bonding method and apparatus, and more particularly to a technique for bonding a semiconductor wafer to a carrier plate with wax (wax bonding).

  When mirror polishing is performed on the surface of a silicon wafer (semiconductor wafer), the silicon wafer is first bonded and fixed to the carrier plate. Thereafter, the carrier plate is put into a surface polishing apparatus, and the surface of the silicon wafer is mirror-polished with a polishing cloth. When a silicon wafer is bonded to the carrier plate, wax is applied to the back surface of the silicon wafer in advance using a wafer bonding apparatus. Next, the silicon wafer was pressed and bonded onto the carrier plate.

  For example, Patent Document 1 is known as a conventional wafer bonding apparatus. The silicon wafer supply unit, the first centering unit for centering the silicon wafer, the spin coating unit for spin-coating wax on the back surface of the silicon wafer, and the silicon wafer after wax coating at around 80 ° C. A hot bake part for evaporating the organic solvent (toluene) in the wax, a second center part for centering the hot-baked silicon wafer, and a silicon wafer after the second centering for the carrier plate And a bonding mechanism for pressing and bonding the silicon wafer to the carrier plate from above.

Hereinafter, a method for bonding a wafer to a carrier plate using the apparatus of Patent Document 1 will be described.
First, the silicon wafer is taken out from the supply unit by the robot arm and transferred to the first centering unit to center the silicon wafer (hereinafter, the wafer transfer between each process is performed by the robot arm arranged individually). ). Next, the silicon wafer is transferred to a spin coating unit, and wax is spin coated on the back surface of the silicon wafer. Thereafter, the silicon wafer is transferred to a hot bake portion where the silicon wafer is heated to around 80 ° C. to evaporate the organic solvent in the wax. Then, the silicon wafer after hot baking is transferred to the second centering part, and the second centering is performed. Next, the silicon wafer after centering is held by the supply mechanism, and transferred to and placed on the carrier plate arranged in the bonding portion. Then, the silicon wafer is pressed from above, and the silicon wafer is bonded and fixed to the carrier plate with wax.
Japanese Patent Laid-Open No. 5-90405

However, in Patent Document 1, wafer temperature control is not performed immediately before application to a silicon wafer. For this reason, when the wax is dropped onto the wafer, the amount of evaporation of the volatile solvent contained in the wax changes depending on the temperature, and the dry state at the time of spin coating changes. As a result, it was not possible to apply the wax in a uniform shape and with a uniform thickness over the entire back surface of the silicon wafer during the spin coating of the wax.
In addition, after bonding the silicon wafer to the carrier plate, the wax application shape and variations in the wafer surface were transferred to the surface of the silicon wafer, reducing the flatness of the silicon wafer surface after mirror polishing. . Furthermore, nanotopography, which is fine irregularities on the nanometer level, has deteriorated on the front and back surfaces of the silicon wafer.

  Therefore, as a result of earnest research, the inventor heated the semiconductor wafer to a predetermined temperature immediately before the wax coating process, and managed the temperature of the semiconductor wafer, and thus the wax temperature (viscosity) after wax coating, The present invention was completed by discovering that the wax can be applied to the entire back surface of the semiconductor wafer with a uniform shape and uniform thickness.

An object of the present invention is to provide a semiconductor wafer bonding method and apparatus capable of applying wax in a uniform shape and a uniform thickness over the entire back surface of a semiconductor wafer.
Another object of the present invention is to provide a semiconductor wafer bonding method and apparatus capable of improving the flatness of the surface of the semiconductor wafer and improving the nanotopography of the front and back surfaces of the semiconductor wafer.
Furthermore, an object of the present invention is to provide a semiconductor wafer bonding method and apparatus capable of reducing the amount of wax applied to the back surface of the semiconductor wafer and further improving the uniformity of the wax coating thickness. .

  The invention according to claim 1 is a wax application step of applying a wax to a back surface opposite to a surface on which a device is to be formed, of the front and back surfaces of a semiconductor wafer, and after applying the wax, A semiconductor wafer bonding method comprising a wafer bonding step of pressing and bonding the semiconductor wafer to a carrier plate, wherein the semiconductor wafer bonding method includes a pre-baking step of heating the semiconductor wafer immediately before the wax coating step. is there.

  According to the first aspect of the present invention, immediately before the wax is applied to the back surface of the semiconductor wafer, the semiconductor wafer is heated (prebaked) to a predetermined temperature, and the temperature of the semiconductor wafer, and thus the wax applied to the semiconductor wafer, is increased. Manage temperature (viscosity). This makes it possible to apply the wax in a uniform shape and a uniform thickness over the entire back surface of the semiconductor wafer.

As the semiconductor wafer, for example, a silicon wafer, a gallium arsenide wafer, or the like can be employed.
The number of semiconductor wafers bonded to the carrier plate may be one (single wafer type) or two or more (batch type).
As the wax, for example, a nonaqueous aqueous liquid in which a natural resin or a synthetic resin is dissolved in an organic solvent can be used.

  The coating thickness of the wax is 1.0 to 3.0 μm. If the thickness is less than 1.0 μm, insufficient adhesion due to uneven wax occurs. On the other hand, if it exceeds 3.0 μm, the amount of elastic deformation increases and the flatness of the outer periphery of the wafer deteriorates. A preferable coating thickness of the wax is 1.0 to 2.0 μm. If it is this range, the more favorable effect that the flatness of the wafer after grinding | polishing will be stabilized more will be acquired.

The pressure at the time of pressurizing a semiconductor wafer to a carrier plate is 10-50 kPa. If it is less than 10 kPa, the adhesion between the semiconductor wafer and the carrier plate is insufficient, resulting in poor adhesion. On the other hand, if it exceeds 50 kPa, the wax distribution becomes non-uniform and the flatness of the wafer deteriorates. A preferable pressure when pressurizing the semiconductor wafer to the carrier plate is 20 to 50 kPa. If it is this range, the more suitable effect that the flatness of the wafer after grinding | polishing will be stabilized more will be acquired.
As a method of applying the wax to the semiconductor wafer, for example, spin coating, brush coating, spray coating, wax dip, or the like can be employed.

The pre-bake process is performed immediately before the wax application process for applying wax to the back surface of the semiconductor wafer.
The heating temperature (prebake temperature) of the semiconductor wafer is 30 to 80 ° C. If it is less than 30 ° C., the wax temperature immediately after the wax application decreases, the viscosity of the wax immediately after the wax application decreases, and the wax does not spread sufficiently, resulting in uneven coating. On the other hand, when the temperature exceeds 80 ° C., the wax temperature immediately after the wax application increases, the solvent of the wax immediately after the wax application evaporates, and the wax does not spread sufficiently, resulting in uneven coating.
A preferable heating temperature of the semiconductor wafer is 30 to 60 ° C. Within this range, it is possible to achieve uniform wax coating without uneven coating on the semiconductor wafer, and to obtain a more favorable effect that the flatness of the wafer can be improved.

  As a method for heating the semiconductor wafer, for example, a method in which the semiconductor wafer is placed on a hot plate and heated can be employed. In addition, for example, lamp heating or the like can be employed.

  The invention according to claim 2 is the semiconductor wafer according to claim 1, wherein the heating temperature of the semiconductor wafer in the pre-baking step is a temperature at which the wax becomes 30 to 40 ° C. immediately after the application to the semiconductor wafer. It is an adhesion method.

  According to the invention described in claim 2, since the heating temperature of the semiconductor wafer in the pre-baking process is set to a temperature at which the wax becomes 30 to 40 ° C. immediately after the application to the semiconductor wafer, the viscosity of the wax (fluidity). However, the viscosity becomes optimum when the wax is applied. As a result, the flatness of the surface of the semiconductor wafer can be increased and the nanotopography of the front and back surfaces of the semiconductor wafer can be improved.

  At the heating temperature of the semiconductor wafer at which the wax temperature immediately after the wax application is less than 30 ° C., the wax does not spread sufficiently and uneven coating occurs. Further, at the heating temperature of the semiconductor wafer where the wax temperature immediately after the wax application exceeds 40 ° C., the wax does not spread sufficiently and uneven coating occurs. A preferable heating temperature of the semiconductor wafer is a temperature at which the wax immediately after application to the semiconductor wafer becomes about 35 ° C. Within this range, a uniform wax coating can be realized without coating unevenness on the semiconductor wafer, and a more favorable effect of improving the wafer flatness can be obtained.

  According to a third aspect of the present invention, the wax is dropped at a single point on the center of the back surface of the stationary semiconductor wafer, and after dropping the wax, the semiconductor wafer is rotated at a high speed, and the wax is removed from the semiconductor wafer. The semiconductor wafer bonding method according to claim 1, wherein spin coating is applied to the entire back surface.

  According to the third aspect of the present invention, the wax is spin-coated over the entire back surface of the semiconductor wafer by dropping the wax at the center of the back surface of the stationary semiconductor wafer and then rotating the semiconductor wafer at a high speed. As a result, the wax is uniformly and thinly spread over the entire back surface of the semiconductor wafer. As a result, the amount of applied wax can be reduced, and the uniformity of the applied thickness of the wax can be further increased.

As a method for dripping the wax, for example, a rotary dripping method in which the wax is applied while rotating the wafer can be employed.
The dripping amount of the wax is appropriately changed depending on the size of the semiconductor wafer. For example, in the case of a 200 mm wafer, it is 1 to 3 ml.
The rotation speed of the semiconductor wafer is 500 to 5000 rpm. If it is less than 500 rpm, the wax does not spread sufficiently and uneven coating occurs. On the other hand, if it exceeds 5000 rpm, the wax will scatter from the semiconductor wafer, resulting in uneven coating. A preferable rotation speed of the semiconductor wafer is 1000 to 4000 rpm. Within this range, it is possible to achieve uniform wax coating without uneven application to the semiconductor wafer, and a more favorable effect is obtained in that the wafer flatness is increased and stabilized.

  According to a fourth aspect of the present invention, there is provided a wax applying means for applying a wax to a back surface opposite to a surface on which a device is formed, on the front and back surfaces of a semiconductor wafer, and the semiconductor through the applied wax. A semiconductor wafer bonding apparatus provided with a wafer bonding means for pressing and bonding a wafer to the carrier plate, and provided with a pre-baking means for heating the semiconductor wafer immediately before applying a wax to the semiconductor wafer. It is.

As the wax applying means, for example, a spin coater can be adopted.
As a wafer bonding means, for example, a wafer bonding machine that presses and bonds a semiconductor wafer to the carrier plate from above using an elastic body, a wafer bonding machine that pressurizes the carrier plate in a vacuum state and bonds the semiconductor wafer to the carrier plate, etc. Can be adopted.
As the pre-baking means, for example, a hot plate or lamp heating can be employed.

  According to a fifth aspect of the present invention, in the semiconductor wafer bonding according to the fourth aspect, the heating temperature of the semiconductor wafer during the pre-baking is a temperature at which the wax becomes 30 to 40 ° C. immediately after the application to the semiconductor wafer. Device.

  According to a sixth aspect of the present invention, the wax is dropped at one point on the center of the back surface of the stationary semiconductor wafer. After the wax is dropped, the semiconductor wafer is rotated at a high speed, and the wax is removed from the semiconductor wafer. 6. The semiconductor wafer bonding apparatus according to claim 4, wherein spin coating is applied to the entire back surface.

  According to the semiconductor wafer bonding method according to claim 1 and the semiconductor wafer bonding apparatus according to claim 4, the semiconductor wafer is heated to a predetermined temperature immediately before the wax is applied to the back surface of the semiconductor wafer. Since the temperature is controlled, the wax can be applied to the entire back surface of the semiconductor wafer in a uniform shape and with a uniform thickness.

  In particular, according to the semiconductor wafer bonding method according to claim 2 and the semiconductor wafer bonding apparatus according to claim 5, the pre-baking temperature is set to a temperature at which the wax immediately after application to the semiconductor wafer becomes 30 to 40 ° C. In addition to improving the flatness of the surface of the semiconductor wafer, the nanotopography of the front and back surfaces of the semiconductor wafer can be improved.

  Furthermore, according to the semiconductor wafer bonding method according to claim 3 and the semiconductor wafer bonding apparatus according to claim 6, only one point of wax is dropped on the center of the back surface of the stationary semiconductor wafer, and then the semiconductor wafer is fastened. Since it is rotated, a small amount of wax can be applied thinly and uniformly over the entire back surface of the wafer. As a result, the amount of wax applied to the wafer can be reduced, and the uniformity of the applied thickness of the wax can be further increased.

  Examples of the present invention will be specifically described below.

  In the flow sheet shown in FIG. 1, in the semiconductor wafer bonding method according to Embodiment 1 of the present invention, the silicon wafer (semiconductor wafer) having a diameter of 200 mm and a thickness of 740 μm after etching is sequentially centered (S101). Wafer back surface cleaning step (S102), pre-bake step (S103), wafer back surface wax application step (S104), hot bake step (S105), orientation flat portion positioning step (S106), and carrier plate A wafer bonding step (S107) is performed.

Hereinafter, these steps will be described in detail with reference to the semiconductor wafer bonding apparatus shown in FIG.
In FIG. 2, reference numeral 10 denotes a semiconductor wafer bonding apparatus according to the first embodiment of the present invention. The semiconductor wafer bonding apparatus 10 includes the following devices in the order of processing of the silicon wafers W to transfer the silicon wafer W to the transfer path. One on each side is deployed in parallel.

  That is, the semiconductor wafer bonding apparatus 10 includes a first wafer transfer robot 11 that pulls out a silicon wafer W from a wafer supply unit (not shown) and transfers it to a predetermined position, and a centering unit 12 that centers the extracted silicon wafer W. A cleaning unit 13 for cleaning the back surface of the silicon wafer W after centering, a pre-baking unit (pre-baking means) 14 for heating (hereinafter, pre-baking) the cleaned silicon wafer W immediately before wax application, and after pre-baking To a wax coating portion (wax coating means) 15 for spin-coating wax on the back surface of the silicon wafer W, a hot baking portion 16 for heating the silicon wafer W after wax coating and evaporating the organic solvent in the wax, and the carrier plate Positioning part for positioning silicon wafer W for bonding 7, a second wafer transfer robot 18 that transfers the positioned silicon wafer W to a carrier plate (not shown), and the silicon wafer W is intermittently moved linearly in sequence from the cleaning unit 13 to the hot bake unit 16. And a wafer transfer unit 19. Further, the semiconductor wafer bonding apparatus 10 has one wafer bonding portion 20 that press-bonds four temporarily bonded silicon wafers W to the carrier plate from above to perform main bonding (FIG. 3).

The first wafer transfer robot 11 turns and expands and contracts the articulated arm to pull out the silicon wafer W from the wafer supply unit, places the silicon wafer W on the centering unit 12, and further centers the silicon wafer W after centering. Is transferred to the cleaning unit 13. The second wafer transfer robot 18 also has the same structure as the first wafer transfer robot 11, and moves the arm three-dimensionally between the hot bake unit 16, the positioning unit 17, and the carrier plate. .
The centering part 12 has a centering plate for centering the silicon wafer W. A pair of centering pins are disposed apart from each other on the upper surface of the centering plate. Using both centering pins, the silicon wafer W placed on the centering plate is centered.

The cleaning unit 13 includes a wafer holding plate 21 that rotates about a rotation axis by driving a rotary motor. The central portion of the surface of the silicon wafer W is vacuum-sucked on the wafer holding plate 21, and the silicon wafer W is rotated at a high speed of 4000 rpm for 10 seconds by a rotary motor, and ultrapure water is sprayed from the nozzle onto the back surface of the wafer for cleaning.
The pre-bake unit 14 includes a hot plate 22 on which a cleaned silicon wafer W is placed and a thermocouple is disposed on the back surface side. By placing the silicon wafer W on the hot plate 22 with the back surface facing up, the moisture of the silicon wafer W is removed and the silicon wafer W immediately before the wax application is pre-baked at 60 ° C. This pre-baking temperature (60 ° C.) is a temperature at which the temperature of the wax immediately after wax application becomes 40 ° C. The pre-baking time is 10 seconds.

The wax application unit 15 has a wafer holding plate 23 that rotates about a rotation axis by driving a rotary motor. The center portion of the front surface of the silicon wafer W is vacuum-sucked on the wafer holding plate 23, and one drop (1.8 ml) of wax (liquid wax at room temperature) is dropped onto the center of the back surface of the silicon wafer W by a dispenser. Thereafter, the silicon wafer W is rotated at a high speed for 5 seconds at 4000 rpm by a rotary motor, and wax is spin coated on the entire back surface of the silicon wafer W after pre-baking.
As the wax, 20% rosin dissolved in a mixed liquid (organic solvent) of toluene, methyl ethyl ketone and methanol is used. The wax temperature at the time of application is room temperature and the wax viscosity is 1.0 cp.

The hot bake unit 16 has a hot plate 24 on which a silicon wafer W is placed and a thermocouple is disposed on the back surface side. The silicon wafer W is placed on the hot plate 24 with the back surface facing up, and the silicon wafer W is heated at 80 ° C. for 15 seconds. Thereby, the organic solvent contained in the wax evaporates.
The positioning part 17 is an apparatus for positioning the silicon wafer W so that the orientation flat part faces the outer peripheral side of the carrier plate. In this way, by considering the arrangement of the silicon wafer W on the carrier plate, it is possible to suppress “sagging” in which the outside of the carrier plate is easily polished due to the characteristics of the polishing apparatus (batch type).

The positioning unit 17 has a wafer holding plate 25 that rotates about a rotation axis by driving a rotary motor with a rotary encoder. The center portion of the surface of the silicon wafer W is vacuum-sucked on the wafer holding plate 25, and the orientation flat (OF) portion is detected by a laser sensor while rotating the silicon wafer W at a low speed.
The wafer transfer unit 19 has a long beam 27 to which a plurality of wafer hands 26 that respectively hold the silicon wafer W are connected. The beam 27 is moved along the transfer path of the silicon wafer W by the linear guide 28. As a result, the silicon wafer W is gripped by the corresponding wafer hand 26 and this gripped state is maintained, and the silicon wafer W is removed from the cleaning unit 13 from the pre-baking unit 14, from the pre-baking unit 14 to the wax applying unit 15, and from the wax applying unit 15. The hot bake unit 16 and the hot bake unit 16 are sequentially transferred to the positioning unit 17 in a linear manner.

As shown in FIG. 3, the wafer bonding portion 20 is provided with a pedestal 31 of a carrier plate 30 to which four silicon wafers W are temporarily bonded on a main body frame 29, and above each main body frame 29, each silicon wafer. It has a configuration in which a large press plate 32 for collectively bonding W together is provided. The press plate 32 is fixed to the lower end of the downward rod 33 a of the air cylinder 33. A central portion of a decompression cover 34 whose lower end edge is in close contact with the periphery of the pedestal 31 is attached to the rod 33a so as to be movable up and down.
In FIG. 3, 35 is an air suction pump that makes the decompression chamber 36 negative, and 37 is a pipe that connects the air suction pump 35 and the decompression chamber 36.

Next, based on the flow sheet of FIG. 1, a semiconductor wafer bonding method will be specifically described using the semiconductor wafer bonding apparatus 10.
As shown in FIG. 2, the silicon wafer W is pulled out from the wafer supply unit by the first wafer transfer robot 11 and transferred to the centering unit 12 to center the silicon wafer W (S101).
After centering, the silicon wafer W is transferred to the cleaning unit 13 by the first wafer transfer robot 11. Here, the center portion of the surface of the silicon wafer W is vacuum-sucked to the wafer holding plate 21. Then, while rotating the silicon wafer W at a high speed of 5000 rpm for 5 seconds by a rotary motor, ultrapure water is sprayed from the nozzle to the back surface of the wafer for cleaning. Thus, the back surface of the silicon wafer W is cleaned with ultrapure water (S102).

Next, the cleaned silicon wafer W is gripped from both sides by the wafer hand 26 of the wafer transfer unit 19, and the silicon wafer W is hot-plated on the pre-bake unit 14 with the back surface of the wafer facing upward using the linear guide 28. 22 is mounted. Here, the silicon wafer W is heated to 60 ° C. (temperature at which the wax temperature immediately after wax application becomes 40 ° C.) for 20 seconds by a thermocouple (S103).
The pre-baked silicon wafer W is transferred to the wax application unit 15 by the first wafer transfer unit 19. Here, the center portion of the surface of the silicon wafer W is vacuum-sucked to the wafer holding plate 23. Then, one drop (1.8 ml) of wax is dropped on the center of the back surface of the silicon wafer W by a dispenser. Next, the silicon wafer W is rotated at a high speed at 5000 rpm for 3 seconds by a rotary motor. As a result, the wax is spin-coated on the entire back surface of the pre-baked silicon wafer W (S104). The coating thickness of the wax is 2.0 μm.

Subsequently, the silicon wafer W after the wax application is transferred to the hot bake unit 16 by the wafer transfer unit 19. Here, the silicon wafer W is placed on the hot plate 24 with its back surface facing up. Then, the silicon wafer W is heated to 80 ° C. for 20 seconds by the thermocouple. Thus, the toluene in the wax evaporates.
Next, the silicon wafer W after hot baking is transferred to the positioning unit 17 by the second wafer transfer robot 18. Here, the center portion of the surface of the silicon wafer W is vacuum-sucked to the wafer holding plate 25. Then, while rotating the silicon wafer W at a low speed, the orientation flat portion is detected by the laser sensor, and the silicon wafer W is positioned (S106).
The positioned silicon wafer W is transferred by the second wafer transfer robot 18 on the upper surface of the carrier plate 30 with its orientation flat portion disposed on the outer peripheral side of the carrier plate 30 (temporary bonding). This operation is continued until all of the four silicon wafers W are temporarily bonded to the carrier plate 30 at 90 ° intervals in the circumferential direction of the carrier plate 30.

Thereafter, the carrier plate 30 on which the four silicon wafers W have been bonded is moved to the wafer bonding section 20 by moving an arm of a plate transfer robot (not shown) (FIG. 3). Here, the carrier plate 30 to which the silicon wafer W is temporarily bonded is first placed on the pedestal 31. After that, the decompression cover 34 is placed on the main frame 29 so as to seal the periphery of the pedestal 31 to form the decompression chamber 36. Then, the decompression chamber 36 is negatively pressured by the air suction pump 35 through the pipe 37, and then the rod 33a of the air cylinder 33 is protruded and the press plate 32 is lowered, so that the silicon wafers W are collectively added from above. Press.
Thus, the silicon wafers W are bonded to the carrier plate 30 by the press plate 32 while the bonding surface between the silicon wafers W and the carrier plate 30 is degassed due to the decompression effect. Thereafter, the decompression chamber 36 is returned to normal pressure. As a result, main bonding is performed so that no air bubbles exist between each silicon wafer W and the carrier plate 30 (S107).

  As described above, since the silicon wafer W is pre-baked to 60 ° C. just before the wax is applied to the back surface of the silicon wafer W, the temperature of the silicon wafer W, and thus the wax applied to the silicon wafer W in the wax application process. Temperature (viscosity) can be controlled. As a result, the wax can be applied in a uniform shape and a uniform thickness over the entire back surface of the silicon wafer W. As a result, the flatness of the surface of the silicon wafer W after mirror polishing can be increased. Moreover, the nanotopography of the front and back surfaces of the silicon wafer W can be improved.

  Further, the heating temperature of the semiconductor wafer in the pre-baking process is set to a temperature (60 ° C.) at which the wax becomes 40 ° C. immediately after the application to the silicon wafer W. As a result, the viscosity (fluidity) of the wax becomes an optimum viscosity when performing the wax coating operation. As a result, the flatness of the surface of the silicon wafer W is further increased, and the nanotopography of the front and back surfaces of the silicon wafer W can be further improved.

  In the wax application step, after a single point of wax is dropped on the center of the back surface of the stationary silicon wafer W, the silicon wafer W is rotated at a high speed so that the wax is spin-coated on the entire back surface of the silicon wafer W. Therefore, the wax is uniformly and thinly extended (2.0 μm) over the entire back surface of the silicon wafer W. As a result, the coating amount (usage amount) of the wax can be reduced, and the uniformity of the coating thickness of the wax can be further improved.

It is a flow sheet which shows the semiconductor wafer adhesion method concerning Example 1 of this invention. It is a top view which shows the principal part of the semiconductor wafer bonding apparatus which concerns on Example 1 of this invention. It is a longitudinal cross-sectional view which shows the wafer bonding part integrated in the semiconductor wafer bonding apparatus which concerns on Example 1 of this invention.

Explanation of symbols

10 Semiconductor wafer bonding equipment,
14 Pre-baking part (pre-baking means),
15 Wax application part (wax application means),
20 Wafer bonding part (wafer bonding means),
30 carrier plate,
W Silicon wafer (semiconductor wafer).

Claims (6)

Of the front and back surfaces of the semiconductor wafer, a wax application step of applying wax to the back surface opposite to the surface on which the device is formed;
In a semiconductor wafer bonding method comprising a wafer bonding step of pressing and bonding the semiconductor wafer to a carrier plate through the wax after application of the wax,
A semiconductor wafer bonding method provided with a pre-baking step of heating the semiconductor wafer immediately before the wax applying step.   The semiconductor wafer bonding method according to claim 1, wherein the heating temperature of the semiconductor wafer in the pre-baking step is a temperature at which the wax becomes 30 to 40 ° C. immediately after application to the semiconductor wafer. The wax is dropped at one point on the center of the back surface of the stationary semiconductor wafer,
3. The semiconductor wafer bonding method according to claim 1, wherein after the wax is dropped, the semiconductor wafer is rotated at a high speed, and the wax is spin-coated on the entire back surface of the semiconductor wafer. Of the front and back surfaces of the semiconductor wafer, wax application means for applying wax to the back surface opposite to the surface on which the device is formed,
In a semiconductor wafer bonding apparatus comprising wafer bonding means for pressing and bonding the semiconductor wafer to the carrier plate via the applied wax,
A semiconductor wafer bonding apparatus provided with pre-baking means for heating the semiconductor wafer immediately before applying wax to the semiconductor wafer.   The semiconductor wafer bonding apparatus according to claim 4, wherein the heating temperature of the semiconductor wafer during the pre-baking is a temperature at which the wax becomes 30 to 40 ° C. immediately after application to the semiconductor wafer. The wax is dropped at one point on the center of the back surface of the stationary semiconductor wafer,
6. The semiconductor wafer bonding apparatus according to claim 4, wherein after the wax is dropped, the semiconductor wafer is rotated at a high speed, and the wax is spin-coated on the entire back surface of the semiconductor wafer.

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