JP2006210479A5 - - Google Patents

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Publication number
JP2006210479A5
JP2006210479A5 JP2005017973A JP2005017973A JP2006210479A5 JP 2006210479 A5 JP2006210479 A5 JP 2006210479A5 JP 2005017973 A JP2005017973 A JP 2005017973A JP 2005017973 A JP2005017973 A JP 2005017973A JP 2006210479 A5 JP2006210479 A5 JP 2006210479A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2005017973A
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Japanese (ja)
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JP2006210479A (ja
JP4695402B2 (ja
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Priority to JP2005017973A priority Critical patent/JP4695402B2/ja
Priority claimed from JP2005017973A external-priority patent/JP4695402B2/ja
Publication of JP2006210479A publication Critical patent/JP2006210479A/ja
Publication of JP2006210479A5 publication Critical patent/JP2006210479A5/ja
Application granted granted Critical
Publication of JP4695402B2 publication Critical patent/JP4695402B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2005017973A 2005-01-26 2005-01-26 ショットキーバリアダイオードの製造方法 Expired - Fee Related JP4695402B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005017973A JP4695402B2 (ja) 2005-01-26 2005-01-26 ショットキーバリアダイオードの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005017973A JP4695402B2 (ja) 2005-01-26 2005-01-26 ショットキーバリアダイオードの製造方法

Publications (3)

Publication Number Publication Date
JP2006210479A JP2006210479A (ja) 2006-08-10
JP2006210479A5 true JP2006210479A5 (fr) 2008-03-13
JP4695402B2 JP4695402B2 (ja) 2011-06-08

Family

ID=36967004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005017973A Expired - Fee Related JP4695402B2 (ja) 2005-01-26 2005-01-26 ショットキーバリアダイオードの製造方法

Country Status (1)

Country Link
JP (1) JP4695402B2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100888290B1 (ko) 2007-08-10 2009-03-11 주식회사 케이이씨 쇼트키 배리어 다이오드 및 그 제조 방법
US8193602B2 (en) * 2010-04-20 2012-06-05 Texas Instruments Incorporated Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdown
CN103681318B (zh) * 2012-09-18 2016-06-29 桂林斯壮微电子有限责任公司 使用硅的选择氧化技术制造结势垒肖特基二极管的方法
CN103325846B (zh) * 2013-06-19 2015-09-16 张家港凯思半导体有限公司 一种斜沟槽肖特基势垒整流器件的制造方法
CN103594524A (zh) * 2013-11-25 2014-02-19 杭州士兰集成电路有限公司 肖特基二极管及其制作方法
CN111146294B (zh) * 2019-12-05 2023-11-07 中国电子科技集团公司第十三研究所 肖特基二极管及其制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63138772A (ja) * 1986-11-29 1988-06-10 Tdk Corp シヨツトキバリア形半導体装置およびその製造方法
JPH09307120A (ja) * 1996-05-14 1997-11-28 Rohm Co Ltd ショットキーバリア半導体装置およびその製法

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