JP2006203189A5 - - Google Patents

Claims (4)

By simultaneously irradiating different regions on the first semiconductor film with a plurality of continuous wave lasers, a second semiconductor film having a plurality of large grain regions and a plurality of poor crystallinity regions is formed,
Forming a resist on the second semiconductor film;
From the intensity of the scattered light of the second semiconductor film generated when light is irradiated from above the resist, one position of the plurality of large particle size regions is detected,
Adjusting the position of the exposure light source using one of the detected large particle size regions as a marker,
A method for manufacturing a semiconductor device, wherein the exposure of the resist is performed using the exposure light source. By simultaneously irradiating different regions on the first semiconductor film with a plurality of continuous wave lasers, a second semiconductor film having a plurality of large grain regions and a plurality of poor crystallinity regions is formed,
Forming a resist on the second semiconductor film;
The scattered light of the second semiconductor film generated when light is irradiated from above the resist is received while moving the CCD camera, and the intensity of the scattered light is measured, whereby the plurality of large particle size regions. Detect one of the positions,
Stopping the movement of the CCD camera when a position of one of the plurality of large particle size areas is detected, moving the exposure light source to the position of the CCD camera,
A method for manufacturing a semiconductor device, wherein the exposure of the resist is performed using the exposure light source. A first step of forming a second semiconductor film having a plurality of large grain regions and a plurality of poor crystallinity regions by simultaneously irradiating different regions on the first semiconductor film with a plurality of continuous wave lasers. And
Performing a second step of forming a resist on the second semiconductor film;
The reflected light of the second semiconductor film generated when light is irradiated from above the resist is received while moving the CCD camera, and the intensity of the scattered light is measured. A third step of detecting one position of
Stopping the movement of the CCD camera at the time when one of the plurality of large particle size regions is detected, and performing a fourth step of moving the exposure light source to the position of the CCD camera,
Performing a fifth step of exposing the resist using the exposure light source;
A method for manufacturing a semiconductor device, comprising: sequentially exposing the resist on the plurality of large grain size regions by repeating the third to fifth steps. In any one of Claims 1 thru | or 3,
The method for manufacturing a semiconductor device, wherein the light is blue light.