JP2006201344A - Substrate for liquid crystal display device, and liquid crystal display device - Google Patents

Substrate for liquid crystal display device, and liquid crystal display device Download PDF

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JP2006201344A
JP2006201344A JP2005011332A JP2005011332A JP2006201344A JP 2006201344 A JP2006201344 A JP 2006201344A JP 2005011332 A JP2005011332 A JP 2005011332A JP 2005011332 A JP2005011332 A JP 2005011332A JP 2006201344 A JP2006201344 A JP 2006201344A
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liquid crystal
crystal display
display device
bus line
substrate
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JP4658622B2 (en
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Yoshihisa Taguchi
善久 田口
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Sharp Corp
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Priority to JP2005011332A priority Critical patent/JP4658622B2/en
Priority to US11/333,144 priority patent/US7586574B2/en
Priority to KR1020060005378A priority patent/KR100823386B1/en
Priority to TW095102068A priority patent/TWI346241B/en
Priority to TW099139232A priority patent/TWI432858B/en
Publication of JP2006201344A publication Critical patent/JP2006201344A/en
Priority to US12/342,328 priority patent/US7719653B2/en
Priority to US12/684,136 priority patent/US7903221B2/en
Priority to US13/019,605 priority patent/US8094281B2/en
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1337Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1337Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136213Storage capacitors associated with the pixel electrode

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate for a liquid crystal display device, with which bright and excellent display characteristics with high transmittance are obtained and a high manufacturing yield is obtained in relation to the substrate for the liquid crystal display device used for a display portion etc. of electronic equipment, and the liquid crystal display device, and to provide the liquid crystal display device. <P>SOLUTION: The liquid crystal display device is constructed so as to have: a storage capacitance bus line 3 formed nearly in parallel to a gate bus line 1; a first pixel electrode 6 electrically connected to a source electrode S of a TFT 4; a second pixel electrode 7 placed opposite to the source electrode S of the TFT 4 via an insulating film, and formed while being separated from the first pixel electrode 6; and a slit portion 13 of which the slit width (a) between respective adjacent edge portions of the first pixel electrode 6 and the second pixel electrode 7 is formed to be wider than the shortest slit width (b) on the storage capacitance bus line 3. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、電子機器の表示部等に用いられる液晶表示装置用基板及び液晶表示装置に関する。   The present invention relates to a substrate for a liquid crystal display device and a liquid crystal display device used for a display unit of an electronic device.

近年、液晶表示装置は、テレビ受像機やパーソナル・コンピュータのモニタ装置等として用いられるようになっている。これらの用途では、表示画面をあらゆる方向から高品質で見ることのできる高い視角特性が求められている。高い視角特性が得られる液晶表示装置として、MVA(Multi−domain Vertical Alignment)方式の液晶表示装置が知られている。MVA方式の液晶表示装置では、電圧無印加時に液晶分子を基板に垂直に配向させ、液晶に電圧が印加されると、基板に形成された突起あるいは透明電極(ITO)に設けられたスリットによって液晶分子の配向が規定されるようになっている。   In recent years, liquid crystal display devices have been used as television receivers, personal computer monitor devices, and the like. In these applications, a high viewing angle characteristic that allows a display screen to be viewed with high quality from all directions is required. As a liquid crystal display device capable of obtaining a high viewing angle characteristic, an MVA (Multi-domain Vertical Alignment) type liquid crystal display device is known. In an MVA type liquid crystal display device, when no voltage is applied, liquid crystal molecules are aligned perpendicularly to the substrate, and when a voltage is applied to the liquid crystal, the liquid crystal is projected by a protrusion formed on the substrate or a slit provided in a transparent electrode (ITO). The molecular orientation is defined.

MVA方式のように液晶分子を基板に垂直に配向させる垂直配向方式では一般に、液晶への印加電圧に対する透過率特性(T−V特性)は表示画面の法線方向(正面方向)とそれより斜め方向とで異なる。このため、画面法線方向のT−V特性を最適に調整しても画面を斜め方向から見るとT−V特性が歪んで画像の色が白っぽく変化してしまう。この問題を解決するために、1画素内を2つの副画素A,Bに分割し、副画素Aの画素電極αを画素駆動用の薄膜トランジスタ(TFT)のソース電極に電気的に接続し、副画素Bの画素電極βはTFTのソース電極から絶縁させてフローティング状態とした画素構造が知られている。   In the vertical alignment method in which liquid crystal molecules are aligned perpendicularly to the substrate as in the MVA method, the transmittance characteristic (TV characteristic) with respect to the voltage applied to the liquid crystal is generally oblique to the normal direction (front direction) of the display screen. It depends on the direction. For this reason, even when the TV characteristic in the normal direction of the screen is optimally adjusted, the TV characteristic is distorted and the color of the image changes whitish when the screen is viewed from an oblique direction. In order to solve this problem, one pixel is divided into two sub-pixels A and B, and the pixel electrode α of the sub-pixel A is electrically connected to the source electrode of a thin film transistor (TFT) for driving a pixel. A pixel structure in which the pixel electrode β of the pixel B is in a floating state by being insulated from the source electrode of the TFT is known.

当該画素構造では、副画素Bの画素電極β及びTFTのソース電極と、両電極間に挟まれた絶縁膜とで制御容量Ccが形成される。この制御容量Ccによる容量結合で副画素Bの画素電極βには副画素Aの画素電極αに印加される電圧より低い電圧が印加される。これにより、斜め方向のT−V特性の歪みを緩和するように1画素内の2領域でT−V特性の異なる領域を形成して、斜め方向から見たときの画像の色が白っぽくなる現象を抑制して視角特性を改善することができる。
特開平2−12号公報 米国特許第4840460号明細書 特許第3076938号公報
In the pixel structure, the control capacitor Cc is formed by the pixel electrode β of the sub-pixel B and the source electrode of the TFT and the insulating film sandwiched between both electrodes. A voltage lower than the voltage applied to the pixel electrode α of the subpixel A is applied to the pixel electrode β of the subpixel B due to the capacitive coupling by the control capacitor Cc. As a result, a region having different TV characteristics is formed in two regions in one pixel so as to alleviate distortion of the TV characteristics in the oblique direction, and the color of the image when viewed from the oblique direction becomes whitish. Can be suppressed and the viewing angle characteristics can be improved.
Japanese Patent Laid-Open No. 2-12 U.S. Pat. No. 4,840,460 Japanese Patent No. 3076938

ところで、副画素Aと副画素Bとを分離する画素電極α、βの隣接端部間のスリット部の幅は通常、数μm程度しかない。このため画素電極α、βの形成時にパターニング不良が生じるとスリットに画素電極材料が残存して画素電極α、β間が短絡してしまい、液晶表示装置の製造歩留りが低下してしまうおそれが生じている。また、画素電極α、β間が短絡してしまうと両副画素A、Bに同電圧が印加されるため、斜め方向のT−V特性の歪みを緩和する効果が失われて良好な表示特性が得られ難くなるという問題が生じる。   By the way, the width of the slit portion between the adjacent ends of the pixel electrodes α and β separating the subpixel A and the subpixel B is usually only about several μm. For this reason, if a patterning defect occurs when the pixel electrodes α and β are formed, the pixel electrode material remains in the slit and the pixel electrodes α and β are short-circuited, which may reduce the manufacturing yield of the liquid crystal display device. ing. In addition, if the pixel electrodes α and β are short-circuited, the same voltage is applied to both the sub-pixels A and B, so that the effect of reducing the distortion of the TV characteristic in the oblique direction is lost and good display characteristics are obtained. The problem arises that it becomes difficult to obtain.

本発明の目的は、高透過率で明るく良好な表示特性が得られ、高い製造歩留りが得られる液晶表示装置用基板及び液晶表示装置を提供することにある。   An object of the present invention is to provide a substrate for a liquid crystal display device and a liquid crystal display device which can obtain bright and good display characteristics with a high transmittance and a high production yield.

上記目的は、絶縁基板上に形成されたゲートバスラインと、前記ゲートバスラインに絶縁膜を介して交差して形成されたドレインバスラインと、前記ゲートバスラインにほぼ平行に形成された蓄積容量バスラインと、前記ゲートバスラインに電気的に接続されたゲート電極と、前記ドレインバスラインに電気的に接続されたドレイン電極とを備えたトランジスタと、前記トランジスタのソース電極に電気的に接続された第1の画素電極と、前記トランジスタのソース電極に絶縁膜を介して対向配置され、前記第1の画素電極と分離して形成された第2の画素電極と、前記第1の画素電極と前記第2の画素電極との隣接端部間のスリット幅が、前記蓄積容量バスライン上で最短スリット幅より広く形成されているスリット部とを有することを特徴とする液晶表示装置用基板によって達成される。   The object is to provide a gate bus line formed on an insulating substrate, a drain bus line formed intersecting the gate bus line through an insulating film, and a storage capacitor formed substantially parallel to the gate bus line. A transistor having a bus line, a gate electrode electrically connected to the gate bus line, a drain electrode electrically connected to the drain bus line, and a transistor electrically connected to a source electrode of the transistor A first pixel electrode, a second pixel electrode formed opposite to the source electrode of the transistor with an insulating film interposed therebetween, and formed separately from the first pixel electrode, and the first pixel electrode, The slit width between adjacent end portions to the second pixel electrode has a slit portion formed wider than the shortest slit width on the storage capacitor bus line. It is achieved by a liquid crystal display device substrate according to.

本発明によれば、高透過率で明るく良好な表示特性が得られ、高い製造歩留りが得られる液晶表示装置を実現できる。   According to the present invention, it is possible to realize a liquid crystal display device capable of obtaining bright and good display characteristics with high transmittance and high production yield.

本発明の一実施の形態による液晶表示装置用基板及び液晶表示装置について図1乃至図4を用いて説明する。図1は、本実施の形態による液晶表示装置の概略構成を示している。図2は、本実施の形態による液晶表示装置の1画素分の構成を等価回路で示している。図1及び図2に示すように、液晶表示装置は、絶縁膜を介して互いに交差して形成されたゲートバスライン1及びドレインバスライン(データバスライン)2と、画素毎に形成されたTFT4及び第1及び第2の画素電極6、7とを備えたTFT基板20を有している。また、液晶表示装置にはTFT基板20に所定のセルギャップで対向する対向基板40が配置されている。TFT基板20と対向基板40との間には例えば負の誘電率異方性を有する液晶が封止されている。対向基板40の液晶側表面には、カラーフィルタ(CF)や共通電極43が形成されている。   A substrate for a liquid crystal display device and a liquid crystal display device according to an embodiment of the present invention will be described with reference to FIGS. FIG. 1 shows a schematic configuration of a liquid crystal display device according to the present embodiment. FIG. 2 shows an equivalent circuit of the configuration of one pixel of the liquid crystal display device according to this embodiment. As shown in FIGS. 1 and 2, the liquid crystal display device includes a gate bus line 1 and a drain bus line (data bus line) 2 which are formed to cross each other through an insulating film, and a TFT 4 which is formed for each pixel. And a TFT substrate 20 having first and second pixel electrodes 6 and 7. In the liquid crystal display device, a counter substrate 40 facing the TFT substrate 20 with a predetermined cell gap is disposed. For example, a liquid crystal having negative dielectric anisotropy is sealed between the TFT substrate 20 and the counter substrate 40. A color filter (CF) and a common electrode 43 are formed on the liquid crystal side surface of the counter substrate 40.

TFT基板20には、複数のゲートバスライン1を駆動するドライバICが実装されたゲートバスライン駆動回路80と、複数のドレインバスライン2を駆動するドライバICが実装されたドレインバスライン駆動回路82とが接続されている。これらの駆動回路80、82は、制御回路84から出力された制御信号に基づいて所定のゲートバスライン1に走査信号を出力し、複数のドレインバスライン2に階調信号を出力するようになっている。TFT基板20の液晶側表面と反対側の面には偏光板87が配置され、対向基板40の液晶側表面と反対側の面には、偏光板87とクロスニコルに偏光板86が配置されている。偏光板87のTFT基板2と反対側の面にはバックライトユニット88が配置されている。   On the TFT substrate 20, a gate bus line driving circuit 80 on which driver ICs for driving a plurality of gate bus lines 1 are mounted, and a drain bus line driving circuit 82 on which driver ICs for driving a plurality of drain bus lines 2 are mounted. And are connected. These drive circuits 80 and 82 output a scanning signal to a predetermined gate bus line 1 based on a control signal output from the control circuit 84, and output a gradation signal to a plurality of drain bus lines 2. ing. A polarizing plate 87 is disposed on the surface opposite to the liquid crystal side surface of the TFT substrate 20, and a polarizing plate 86 is disposed on the surface opposite to the liquid crystal side surface of the counter substrate 40 in crossed Nicols. Yes. A backlight unit 88 is disposed on the surface of the polarizing plate 87 opposite to the TFT substrate 2.

図2に示すように、TFT4のゲート電極Gはゲートバスライン1に接続され、ドレイン電極Dはドレインバスライン2に接続されている。TFT4のソース電極Sは、第1の画素電極6及び、蓄積容量電極8、接続電極10と電気的に接続されている。第1の画素電極6と、当該第1の画素電極6と対向する対向基板40側の共通電極43と、第1の画素電極6と共通電極43との間に挟まれた液晶とで第1の液晶容量Clc1が形成されている。蓄積容量電極8と、当該蓄積容量電極8と対向する蓄積容量バスライン3と、蓄積容量電極8と蓄積容量バスライン3との間に挟まれた絶縁膜とで蓄積容量Csが形成されている。接続電極10と、当該接続電極10と対向する第2の画素電極7と、接続電極10と第2の画素電極7との間に挟まれた絶縁膜とで制御容量Ccが形成されている。また、第2の画素電極7と、当該第2の画素電極7と対向する対向基板40側の共通電極43と、第2の画素電極7と共通電極43との間に挟まれた液晶とで第2の液晶容量Clc2が形成されている。本例では、蓄積容量バスライン3と共通電極43とには同電位が印加される構成となっている。   As shown in FIG. 2, the gate electrode G of the TFT 4 is connected to the gate bus line 1, and the drain electrode D is connected to the drain bus line 2. The source electrode S of the TFT 4 is electrically connected to the first pixel electrode 6, the storage capacitor electrode 8, and the connection electrode 10. The first pixel electrode 6, the common electrode 43 on the counter substrate 40 facing the first pixel electrode 6, and the liquid crystal sandwiched between the first pixel electrode 6 and the common electrode 43 are first. Liquid crystal capacitance Clc1 is formed. The storage capacitor Cs is formed by the storage capacitor electrode 8, the storage capacitor bus line 3 facing the storage capacitor electrode 8, and an insulating film sandwiched between the storage capacitor electrode 8 and the storage capacitor bus line 3. . A control capacitor Cc is formed by the connection electrode 10, the second pixel electrode 7 facing the connection electrode 10, and an insulating film sandwiched between the connection electrode 10 and the second pixel electrode 7. Further, the second pixel electrode 7, the common electrode 43 on the counter substrate 40 facing the second pixel electrode 7, and the liquid crystal sandwiched between the second pixel electrode 7 and the common electrode 43. A second liquid crystal capacitor Clc2 is formed. In this example, the same potential is applied to the storage capacitor bus line 3 and the common electrode 43.

このように、本実施の形態による画素は、第2の液晶容量Clc2と制御容量Ccとが直列に接続され、これらと、第1の液晶容量Clc1、蓄積容量Csがそれぞれ並列に接続された回路構成となっている。TFT4がオン状態になるとドレインバスライン2に供給された階調信号が第1の画素電極6、共通電極8、接続電極10に印加され、一方、蓄積容量バスラインと共通電極43には共通電位が印加される。これにより、第2の画素電極7には、第1の画素電極6に印加された階調信号の電位より所定量だけ低い電位が維持される。   As described above, in the pixel according to the present embodiment, the second liquid crystal capacitor Clc2 and the control capacitor Cc are connected in series, and the first liquid crystal capacitor Clc1 and the storage capacitor Cs are connected in parallel. It has a configuration. When the TFT 4 is turned on, the gradation signal supplied to the drain bus line 2 is applied to the first pixel electrode 6, the common electrode 8, and the connection electrode 10, while the storage capacitor bus line and the common electrode 43 have a common potential. Is applied. As a result, the second pixel electrode 7 is maintained at a potential lower than the potential of the gradation signal applied to the first pixel electrode 6 by a predetermined amount.

図3は、本実施の形態による液晶表示装置用基板であるTFT基板20の1画素の構成を示す平面図である。図4は、図3のa−a’線で切断したTFT基板20の断面構成を示している。図3及び図4に示すように、TFT基板20は、ガラス基板(絶縁基板)21上に形成されたゲートバスライン1と、SiN膜等からなる絶縁膜22を介してゲートバスライン1に交差して形成されたドレインバスライン2とを有している。ゲートバスライン1及びドレインバスライン2の交差位置近傍には、スイッチング素子としてTFT4が配置されている。ゲートバスライン1の一部はTFT4のゲート電極(G)として機能する。ゲートバスライン1上には、絶縁膜(ゲート絶縁膜)22を介してTFT4の動作半導体層が形成され、当該動作半導体層上にはドレイン電極(D)と、ソース電極(S)とが所定の間隙を介して対向して形成されている。ドレイン電極(D)及びソース電極(S)上の基板全面には、SiN膜等からなる最終保護膜23が形成されている。   FIG. 3 is a plan view showing a configuration of one pixel of the TFT substrate 20 which is a substrate for a liquid crystal display device according to the present embodiment. FIG. 4 shows a cross-sectional configuration of the TFT substrate 20 cut along the line a-a ′ of FIG. 3. As shown in FIGS. 3 and 4, the TFT substrate 20 intersects the gate bus line 1 through a gate bus line 1 formed on a glass substrate (insulating substrate) 21 and an insulating film 22 made of a SiN film or the like. And a drain bus line 2 formed in this manner. In the vicinity of the intersection of the gate bus line 1 and the drain bus line 2, a TFT 4 is arranged as a switching element. A part of the gate bus line 1 functions as a gate electrode (G) of the TFT 4. An operating semiconductor layer of the TFT 4 is formed on the gate bus line 1 via an insulating film (gate insulating film) 22, and a drain electrode (D) and a source electrode (S) are predetermined on the operating semiconductor layer. Are formed to face each other with a gap therebetween. A final protective film 23 made of a SiN film or the like is formed on the entire surface of the substrate on the drain electrode (D) and the source electrode (S).

また、ゲートバスライン1及びドレインバスライン2により画定された画素領域を横切って、ゲートバスライン1に並列して延びる蓄積容量バスライン3が形成されている。蓄積容量バスライン3上には、絶縁膜22を介して蓄積容量電極8が画素毎に形成されている。蓄積容量電極8は、接続電極10を介してTFT4のソース電極(S)に電気的に接続されている。絶縁膜22及びそれを介して対向する蓄積容量バスライン3と蓄積容量電極8とで蓄積容量Csが形成される。   A storage capacitor bus line 3 extending in parallel to the gate bus line 1 is formed across the pixel region defined by the gate bus line 1 and the drain bus line 2. On the storage capacitor bus line 3, a storage capacitor electrode 8 is formed for each pixel via an insulating film 22. The storage capacitor electrode 8 is electrically connected to the source electrode (S) of the TFT 4 via the connection electrode 10. The storage capacitor Cs is formed by the insulating film 22 and the storage capacitor bus line 3 and the storage capacitor electrode 8 facing each other through the insulating film 22.

ゲートバスライン1及びドレインバスライン2により画定された画素領域は、第1の副画素Aと第2の副画素Bとに分割されている。図3において、例えば台形状の第1の副画素Aは画素領域の中央部左寄りに配置され、第2の副画素Bは画素領域のうち第1の副画素Aの領域を除いた上部、下部及び中央部右側端部に配置されている。画素領域内の第1及び第2の副画素A、Bの配置は、例えば蓄積容量バスライン3に対しそれぞれほぼ線対称になっている。第1の副画素Aには第1の画素電極6が形成され、第2の副画素Bには第2の画素電極7が形成されている。第1及び第2の画素電極6、7は、共にITO等の透明導電膜により形成されている。   A pixel region defined by the gate bus line 1 and the drain bus line 2 is divided into a first subpixel A and a second subpixel B. In FIG. 3, for example, the trapezoidal first sub-pixel A is arranged on the left side of the center of the pixel area, and the second sub-pixel B is an upper part and a lower part of the pixel area excluding the first sub-pixel A area. And it is arrange | positioned at the center part right end part. The arrangement of the first and second subpixels A and B in the pixel region is substantially line-symmetric with respect to the storage capacitor bus line 3, for example. A first pixel electrode 6 is formed on the first subpixel A, and a second pixel electrode 7 is formed on the second subpixel B. Both the first and second pixel electrodes 6 and 7 are formed of a transparent conductive film such as ITO.

第1の画素電極6と第2の画素電極7との隣接端部間は、ITOが形成されていないスリット部13となっている。上述のように第1の画素電極6と第2の画素電極7との形状が規定されているので、スリット部13は、蓄積容量バスライン3に対して画素右側からほぼ直交して延び、次いで画素左側に向かって斜め上下にそれぞれ延びる形状をしている。   Between the adjacent end portions of the first pixel electrode 6 and the second pixel electrode 7 is a slit portion 13 in which ITO is not formed. Since the shapes of the first pixel electrode 6 and the second pixel electrode 7 are defined as described above, the slit portion 13 extends substantially orthogonally from the right side of the pixel with respect to the storage capacitor bus line 3, and then It has a shape that extends diagonally up and down toward the left side of the pixel.

スリット部13における第1の画素電極6と第2の画素電極7との隣接端部間のスリット幅は位置により異なるように形成されている。スリット部13の斜め方向の領域は第1及び第2の画素電極6、7を分離する分離用スリットとしての機能と共に、液晶の配向方位を制御する配向制御用構造物としての機能も兼ねている。また、スリット部13のスリット幅をあまり広くしてしまうと、第1及び第2の画素電極6、7のそれぞれの電極面積が狭くなってしまい透過率が下がって輝度が低下してしまう。これらの条件を考慮して、スリット部13の画素左側に向かって上下にそれぞれ延びる領域のスリット幅cは約10μmになっている。   The slit width between the adjacent end portions of the first pixel electrode 6 and the second pixel electrode 7 in the slit portion 13 is formed to be different depending on the position. The oblique region of the slit portion 13 has a function as a separation slit for separating the first and second pixel electrodes 6 and 7 and also a function as an alignment control structure for controlling the alignment direction of the liquid crystal. . Further, if the slit width of the slit portion 13 is too wide, the electrode areas of the first and second pixel electrodes 6 and 7 are narrowed, the transmittance is lowered, and the luminance is lowered. Taking these conditions into consideration, the slit width c of the region extending vertically to the left side of the pixel of the slit portion 13 is about 10 μm.

一方、仮想円12内に示すように、スリット部13のうち蓄積容量バスライン3に対して画素右側からほぼ直交して延びる領域は、液晶の配向制御には寄与せず、単に第1及び第2の画素電極6、7を分離するためだけに存在している。このため、現状の液晶表示装置用のフォトリソグラフィ技術でのパターニングのマージンを考慮した最短スリット幅cを確保すればよく、本例では最短スリット幅cは7μmとしている。これにより画素電極の製造時に第1及び第2の画素電極6、7が接続される可能性を低減できる。   On the other hand, as shown in the imaginary circle 12, the region extending almost orthogonally from the right side of the pixel to the storage capacitor bus line 3 in the slit portion 13 does not contribute to the alignment control of the liquid crystal, and is simply the first and the first. It exists only to separate the two pixel electrodes 6 and 7. For this reason, it is sufficient to secure the shortest slit width c in consideration of the patterning margin in the photolithography technique for the current liquid crystal display device. In this example, the shortest slit width c is 7 μm. This can reduce the possibility that the first and second pixel electrodes 6 and 7 are connected when the pixel electrode is manufactured.

また、仮想円11内に示すように、蓄積容量バスライン3上はバックライトユニットからの光が遮光されるので、透過率には影響しない部分である。そこで、画素電極の製造時に第1及び第2の画素電極6、7が接続される可能性をさらに確実に低減するために蓄積容量バスライン3上のスリット幅aは、最短スリット幅bより広く形成している。蓄積容量バスライン3上のスリット幅aは、本例では約10μmでスリット幅cと同一に形成しているが、これに限られず、スリット幅aは、最短スリット幅bより広ければスリット幅cより狭くても広くてもかまわない。これにより、液晶表示装置の透過率を低下させずに、画素電極の製造時に第1及び第2の画素電極6、7の短絡の発生率を低下させることができる。   Further, as shown in the virtual circle 11, the light from the backlight unit is blocked on the storage capacitor bus line 3, so that the transmittance is not affected. Therefore, the slit width a on the storage capacitor bus line 3 is wider than the shortest slit width b in order to further reduce the possibility that the first and second pixel electrodes 6 and 7 are connected at the time of manufacturing the pixel electrode. Forming. In this example, the slit width a on the storage capacitor bus line 3 is about 10 μm and the same as the slit width c. However, the slit width a is not limited to this, and the slit width c is larger than the shortest slit width b. It can be narrower or wider. Thereby, it is possible to reduce the occurrence rate of the short circuit between the first and second pixel electrodes 6 and 7 at the time of manufacturing the pixel electrode without reducing the transmittance of the liquid crystal display device.

さて、第1の画素電極6は、最終保護膜23を開口したコンタクトホール9を介して、蓄積容量電極8に接続されている。蓄積容量電極8は接続電極10を介してTFT4のソース電極(S)に電気的に接続されている。これにより、第1の画素電極6はTFT4のソース電極(S)に直結されて、TFT4がオン状態のときにドレインバスライン2上の階調信号が供給されるようになっている。第2の画素電極7の一部は、基板面法線方向にみて、接続電極10及び蓄積容量電極8の一部に最終保護膜23を介して重なって配置されている。第2の画素電極7に重なって配置された領域の接続電極10及び蓄積容量電極8は制御容量電極として機能し、当該制御容量電極及び第2の画素電極7とそれらに挟まれた最終保護膜23とで制御容量(第2の蓄積容量)Ccを形成する。これにより第2の画素電極7は、制御容量Ccを介した容量結合によってTFT4のソース電極(S)に間接的に接続されている。   The first pixel electrode 6 is connected to the storage capacitor electrode 8 through the contact hole 9 having the final protective film 23 opened. The storage capacitor electrode 8 is electrically connected to the source electrode (S) of the TFT 4 through the connection electrode 10. As a result, the first pixel electrode 6 is directly connected to the source electrode (S) of the TFT 4 so that the gradation signal on the drain bus line 2 is supplied when the TFT 4 is in the ON state. A part of the second pixel electrode 7 is disposed so as to overlap a part of the connection electrode 10 and the storage capacitor electrode 8 with a final protective film 23 in the normal direction of the substrate surface. The connection electrode 10 and the storage capacitor electrode 8 in the region arranged so as to overlap the second pixel electrode 7 function as a control capacitor electrode, and the final protective film sandwiched between the control capacitor electrode and the second pixel electrode 7. 23 forms a control capacitor (second storage capacitor) Cc. Thereby, the second pixel electrode 7 is indirectly connected to the source electrode (S) of the TFT 4 by capacitive coupling via the control capacitor Cc.

対向基板40は、ガラス基板上に形成されたCF樹脂層(不図示)と、CF樹脂層上に形成された共通電極43とを有している。液晶を介して対向する第1の副画素Aの第1の画素電極6と共通電極43との間には液晶容量Clc1が形成され、第2の副画素Bの第2の画素電極7と共通電極43との間には液晶容量Clc2が形成される。TFT基板20の液晶との界面には不図示の垂直配向膜が形成され、対向基板40の液晶との界面には不図示の垂直配向膜がそれぞれ形成されている。これにより、電圧無印加時の液晶分子は、基板面にほぼ垂直に配向する。   The counter substrate 40 has a CF resin layer (not shown) formed on the glass substrate and a common electrode 43 formed on the CF resin layer. A liquid crystal capacitor Clc1 is formed between the first pixel electrode 6 of the first subpixel A and the common electrode 43 facing each other through the liquid crystal, and is common to the second pixel electrode 7 of the second subpixel B. A liquid crystal capacitance Clc2 is formed between the electrodes 43. A vertical alignment film (not shown) is formed on the interface of the TFT substrate 20 with the liquid crystal, and a vertical alignment film (not shown) is formed on the interface of the counter substrate 40 with the liquid crystal. Thereby, the liquid crystal molecules when no voltage is applied are aligned substantially perpendicular to the substrate surface.

TFT4がオン状態になって階調信号が供給されると、第1の画素電極6には階調信号電位が印加され、第2の画素電極7には接続電極10から最終保護膜23を介して階調信号電位より低い所定の電位が供給される。これにより、斜め方向のT−V特性の歪みを緩和するように1画素内の2領域でT−V特性の異なる領域を形成して、斜め方向から見たときの画像の色が白っぽくなる現象を抑制して視角特性を改善することができる。   When the TFT 4 is turned on and a gradation signal is supplied, a gradation signal potential is applied to the first pixel electrode 6, and the second pixel electrode 7 is connected from the connection electrode 10 through the final protective film 23. Thus, a predetermined potential lower than the gradation signal potential is supplied. As a result, a phenomenon in which regions having different TV characteristics are formed in two regions in one pixel so as to alleviate the distortion of the TV characteristics in the oblique direction, and the color of the image when viewed from the oblique direction becomes whitish. And the viewing angle characteristics can be improved.

本実施の形態によれば、スリット部13の幅は最短でも7μmあり、さらに表示特性に寄与しない領域のスリット幅をそれより広げているため、第1及び第2の画素電極6、7のパターニング時にスリット部13に画素電極材料が残存して第1及び第2の画素電極6、7間が短絡してしまうことを防止できるので液晶表示装置の製造歩留りを向上させることが可能となる。また、第1及び第2の画素電極6、7間の短絡不良を確実に防止できるので、斜め方向のT−V特性の歪みを緩和した良好な表示特性を得ることができる。   According to the present embodiment, the width of the slit portion 13 is 7 μm at the shortest, and the slit width of the region that does not contribute to the display characteristics is further increased, so that the patterning of the first and second pixel electrodes 6, 7 is performed. Since it is possible to prevent the pixel electrode material from remaining in the slit portion 13 and short circuit between the first and second pixel electrodes 6 and 7, sometimes the manufacturing yield of the liquid crystal display device can be improved. In addition, since a short circuit failure between the first and second pixel electrodes 6 and 7 can be reliably prevented, it is possible to obtain good display characteristics in which distortion of the TV characteristic in the oblique direction is reduced.

また、図3に示すように、スリット部13のほぼ中央に沿って、蓄積容量バスライン3から引き出された蓄積容量引き出し線5が形成されている。蓄積容量引き出し線5を設けることにより、液晶に電圧を印加してもスリット部13上の電界をフラットにすることができ、スリット部13上に液晶分子の配向ベクトルの特異点を発生させないようにすることができる。   Further, as shown in FIG. 3, the storage capacitor lead line 5 drawn from the storage capacitor bus line 3 is formed along substantially the center of the slit portion 13. By providing the storage capacitor lead line 5, the electric field on the slit portion 13 can be flattened even when a voltage is applied to the liquid crystal, so that no singular point of the alignment vector of liquid crystal molecules is generated on the slit portion 13. can do.

また、図3に示すように、蓄積容量引き出し線5の一部と第1の画素電極6の一部が基板面法線方向に見て重なっている。これにより、蓄積容量Csを構成する電極面積を稼ぎながら副画素Aの開口率を向上させることができる。   Further, as shown in FIG. 3, a part of the storage capacitor lead line 5 and a part of the first pixel electrode 6 overlap each other when viewed in the normal direction of the substrate surface. As a result, the aperture ratio of the sub-pixel A can be improved while increasing the electrode area constituting the storage capacitor Cs.

本発明は、上記実施の形態に限らず種々の変形が可能である。
例えば、上記実施の形態ではMVA方式を用いたVAモードの液晶表示装置を例に説明したが、本発明はこれに限らず、TNモード等の他の液晶表示装置にも適用できる。
The present invention is not limited to the above embodiment, and various modifications can be made.
For example, in the above embodiment, the VA mode liquid crystal display device using the MVA method has been described as an example. However, the present invention is not limited to this and can be applied to other liquid crystal display devices such as a TN mode.

また、上記実施の形態では透過型の液晶表示装置を例に挙げたが、本発明はこれに限らず、反射型や半透過型の液晶表示装置にも適用できる。   Although the transmissive liquid crystal display device has been described as an example in the above embodiment, the present invention is not limited to this, and can be applied to a reflective or transflective liquid crystal display device.

さらに上記実施の形態では、TFT基板に対向して配置された対向基板上にCFが形成された液晶表示装置を例に挙げたが、本発明はこれに限らず、TFT基板上にCFが形成された、いわゆるCF−on−TFT構造の液晶表示装置にも適用できる。   Further, in the above embodiment, the liquid crystal display device in which CF is formed on the counter substrate disposed to face the TFT substrate is taken as an example. However, the present invention is not limited to this, and CF is formed on the TFT substrate. The present invention can also be applied to a liquid crystal display device having a so-called CF-on-TFT structure.

以上説明した実施の形態による液晶表示装置用基板及び液晶表示装置は、以下のようにまとめられる。
(付記1)
絶縁基板上に形成されたゲートバスラインと、
前記ゲートバスラインに絶縁膜を介して交差して形成されたドレインバスラインと、
前記ゲートバスラインにほぼ平行に形成された蓄積容量バスラインと、
前記ゲートバスラインに電気的に接続されたゲート電極と、前記ドレインバスラインに電気的に接続されたドレイン電極とを備えたトランジスタと、
前記トランジスタのソース電極に電気的に接続された第1の画素電極と、
前記トランジスタのソース電極に絶縁膜を介して対向配置され、前記第1の画素電極と分離して形成された第2の画素電極と、
前記第1の画素電極と前記第2の画素電極との隣接端部間のスリット幅が、前記蓄積容量バスライン上で最短スリット幅より広く形成されているスリット部と
を有することを特徴とする液晶表示装置用基板。
(付記2)
付記1記載の液晶表示装置用基板において、
前記蓄積容量バスラインから引き出されて前記スリット部に延出する蓄積容量引き出し線をさらに有すること
を特徴とする液晶表示装置用基板。
(付記3)
付記2記載の液晶表示装置用基板において、
前記蓄積容量引き出し線の少なくとも一部は、基板面法線方向に見て、前記第1の画素電極に重なっていること
を特徴とする液晶表示装置用基板。
(付記4)
付記1乃至3のいずれか1項に記載の液晶表示装置用基板において、
前記最短スリット幅は、7μm以上であること
を特徴とする液晶表示装置用基板。
(付記5)
対向配置された一対の基板と、前記一対の基板間に封止された液晶とを備えた液晶表示装置であって、
前記一対の基板の一方に、付記1乃至4のいずれか1項に記載の液晶表示装置用基板が用いられていること
を特徴とする液晶表示装置。
The substrate for a liquid crystal display device and the liquid crystal display device according to the embodiments described above are summarized as follows.
(Appendix 1)
A gate bus line formed on an insulating substrate;
A drain bus line formed to intersect the gate bus line through an insulating film;
A storage capacitor bus line formed substantially parallel to the gate bus line;
A transistor comprising a gate electrode electrically connected to the gate bus line; and a drain electrode electrically connected to the drain bus line;
A first pixel electrode electrically connected to a source electrode of the transistor;
A second pixel electrode disposed opposite to the source electrode of the transistor via an insulating film and formed separately from the first pixel electrode;
The slit width between adjacent end portions of the first pixel electrode and the second pixel electrode has a slit portion formed wider than the shortest slit width on the storage capacitor bus line. A substrate for a liquid crystal display device.
(Appendix 2)
In the substrate for a liquid crystal display device according to appendix 1,
A substrate for a liquid crystal display device, further comprising a storage capacitor lead line drawn from the storage capacitor bus line and extending to the slit portion.
(Appendix 3)
In the substrate for a liquid crystal display device according to appendix 2,
A substrate for a liquid crystal display device, wherein at least a part of the storage capacitor lead line overlaps the first pixel electrode when viewed in the normal direction of the substrate surface.
(Appendix 4)
In the liquid crystal display substrate according to any one of appendices 1 to 3,
The shortest slit width is 7 μm or more. A substrate for a liquid crystal display device.
(Appendix 5)
A liquid crystal display device comprising a pair of substrates disposed opposite to each other and a liquid crystal sealed between the pair of substrates,
5. A liquid crystal display device according to any one of appendices 1 to 4, wherein one of the pair of substrates is used.

本発明の一実施の形態による液晶表示装置の概略構成を示す図である。It is a figure which shows schematic structure of the liquid crystal display device by one embodiment of this invention. 本発明の一実施の形態による液晶表示装置の1画素の構成を示す等価回路図である。It is an equivalent circuit diagram which shows the structure of 1 pixel of the liquid crystal display device by one embodiment of this invention. 本発明の一実施の形態による液晶表示装置用基板の1画素の構成を示す平面図である。It is a top view which shows the structure of 1 pixel of the board | substrate for liquid crystal display devices by one embodiment of this invention. 本発明の一実施の形態による液晶表示装置用基板の1画素の構成を示す断面図である。It is sectional drawing which shows the structure of 1 pixel of the board | substrate for liquid crystal display devices by one embodiment of this invention.

符号の説明Explanation of symbols

1 ゲートバスライン
2 ドレインバスライン
3 蓄積容量バスライン
4 TFT
5 蓄積容量引き出し線
6 第1の画素電極
7 第2の画素電極
8 蓄積容量電極
9 コンタクトホール
10 接続電極
11、12 仮想円
13 スリット部
20 TFT基板
22 絶縁膜
23 最終保護膜
40 対向基板
43 共通電極
80 ゲートバスライン駆動回路
82 ドレインバスライン駆動回路
84 制御回路
86、87 偏光板
88 バックライトユニット
1 Gate bus line 2 Drain bus line 3 Storage capacitor bus line 4 TFT
5 Storage Capacitor Lead Line 6 First Pixel Electrode 7 Second Pixel Electrode 8 Storage Capacitance Electrode 9 Contact Hole 10 Connection Electrode 11, 12 Virtual Circle 13 Slit 20 TFT Substrate 22 Insulating Film 23 Final Protective Film 40 Counter Substrate 43 Common Electrode 80 Gate bus line driving circuit 82 Drain bus line driving circuit 84 Control circuit 86, 87 Polarizing plate 88 Backlight unit

Claims (5)

絶縁基板上に形成されたゲートバスラインと、
前記ゲートバスラインに絶縁膜を介して交差して形成されたドレインバスラインと、
前記ゲートバスラインにほぼ平行に形成された蓄積容量バスラインと、
前記ゲートバスラインに電気的に接続されたゲート電極と、前記ドレインバスラインに電気的に接続されたドレイン電極とを備えたトランジスタと、
前記トランジスタのソース電極に電気的に接続された第1の画素電極と、
前記トランジスタのソース電極に絶縁膜を介して対向配置され、前記第1の画素電極と分離して形成された第2の画素電極と、
前記第1の画素電極と前記第2の画素電極との隣接端部間のスリット幅が、前記蓄積容量バスライン上で最短スリット幅より広く形成されているスリット部と
を有することを特徴とする液晶表示装置用基板。
A gate bus line formed on an insulating substrate;
A drain bus line formed to intersect the gate bus line through an insulating film;
A storage capacitor bus line formed substantially parallel to the gate bus line;
A transistor comprising a gate electrode electrically connected to the gate bus line; and a drain electrode electrically connected to the drain bus line;
A first pixel electrode electrically connected to a source electrode of the transistor;
A second pixel electrode disposed opposite to the source electrode of the transistor via an insulating film and formed separately from the first pixel electrode;
The slit width between adjacent end portions of the first pixel electrode and the second pixel electrode has a slit portion formed wider than the shortest slit width on the storage capacitor bus line. A substrate for a liquid crystal display device.
請求項1記載の液晶表示装置用基板において、
前記蓄積容量バスラインから引き出されて前記スリット部に延出する蓄積容量引き出し線をさらに有すること
を特徴とする液晶表示装置用基板。
The substrate for a liquid crystal display device according to claim 1,
A substrate for a liquid crystal display device, further comprising a storage capacitor lead line drawn from the storage capacitor bus line and extending to the slit portion.
請求項2記載の液晶表示装置用基板において、
前記蓄積容量引き出し線の少なくとも一部は、基板面法線方向に見て、前記第1の画素電極に重なっていること
を特徴とする液晶表示装置用基板。
The substrate for a liquid crystal display device according to claim 2,
A substrate for a liquid crystal display device, wherein at least a part of the storage capacitor lead line overlaps the first pixel electrode when viewed in the normal direction of the substrate surface.
請求項1乃至3のいずれか1項に記載の液晶表示装置用基板において、
前記最短スリット幅は、7μm以上であること
を特徴とする液晶表示装置用基板。
The substrate for a liquid crystal display device according to any one of claims 1 to 3,
The shortest slit width is 7 μm or more. A substrate for a liquid crystal display device.
対向配置された一対の基板と、前記一対の基板間に封止された液晶とを備えた液晶表示装置であって、
前記一対の基板の一方に、請求項1乃至4のいずれか1項に記載の液晶表示装置用基板が用いられていること
を特徴とする液晶表示装置。
A liquid crystal display device comprising a pair of substrates disposed opposite to each other and a liquid crystal sealed between the pair of substrates,
5. The liquid crystal display device according to claim 1, wherein the substrate for a liquid crystal display device according to claim 1 is used on one of the pair of substrates.
JP2005011332A 2005-01-19 2005-01-19 Substrate for liquid crystal display device and liquid crystal display device Expired - Fee Related JP4658622B2 (en)

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US12/342,328 US7719653B2 (en) 2005-01-19 2008-12-23 Substrate for a liquid crystal display device and liquid crystal display device
US12/684,136 US7903221B2 (en) 2005-01-19 2010-01-08 Substrate for a liquid crystal display device and liquid crystal display device
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