JP2006200944A - Method of inspecting flaw of sample and method of inspecting sample - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To enhance an inspection precision without bringing about an increase in inspection time by reducing the pixel size only of a part doubted as a flaw. <P>SOLUTION: In a device for inspecting a sample for inspecting the pattern flaw of a sample to be inspected, the measuring pattern data of a predetermined pixel size corresponding to the pattern of the sample to be measured is formed by measuring pattern forming parts 13-16 while reference pattern data is formed on the basis of a plane pattern by reference pattern data forming parts 23 and 24, and the measuring pattern data and the reference pattern data are compared with each other by a comparison decision part 25. If the difference between both pattern data exceeds a threshold, it is decided that the pattern of the sample to be measured has a flaw. When decided to be a flaw or pattern wherein a flaw is easy to misdetect, measuring pattern data more reduced in pixel size is reformed with respect to the pattern part and the reformed measuring pattern data and the reference pattern data are compared and decided. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a sample inspection apparatus for inspecting a pattern defect of an object, in particular, an extremely small pattern defect such as a photomask, a wafer, or a liquid crystal substrate used when manufacturing a semiconductor element or a liquid crystal display (LCD). The present invention relates to a sample inspection apparatus and a sample inspection method for inspection.

  As represented by a 1 gigabit class DRAM, a pattern constituting a large scale integrated circuit (LSI) is going to be on the order of submicron to nanometer. One of the major causes of a decrease in yield in the manufacture of LSI is a defect of a photomask used when an ultrafine pattern is exposed and transferred onto a semiconductor wafer by a photolithography technique. In particular, with the miniaturization of the pattern dimensions of LSIs formed on semiconductor wafers, the dimensions that must be detected as pattern defects have become extremely small. For this reason, development of an apparatus for inspecting such a defect is actively performed.

  On the other hand, along with the development of multimedia, LCDs are becoming larger in size to 500 mm × 600 mm or more, and patterns such as TFTs formed on the liquid crystal substrate are being miniaturized. Therefore, it is required to inspect a very small pattern defect over a wide range. For this reason, there is an urgent need to develop a sample inspection apparatus that efficiently inspects defects of a photomask used in manufacturing such a large area LCD pattern and a large area LCD in a short time.

  In a conventional photomask defect inspection apparatus, the measured pattern data is compared with design image data (reference pattern data) that has been subjected to appropriate filter processing according to an appropriate algorithm. ing. However, in this type of apparatus, it is difficult to distinguish between an actual defect and a non-defective one that is erroneously determined as a defect (pseudo defect). One method for improving the accuracy of defect determination is to reduce the pixel size. However, if the pixel size is reduced, the total number of pixels that must be processed increases, so that the inspection time becomes longer. there were.

In addition, when a defect is detected, a method has been proposed in which high-precision reference pattern data in which design data in the vicinity of the portion is developed with high accuracy is regenerated and errors are re-identified (for example, Patent Document 1). reference). However, when the present inventors conducted pattern defect inspection using such a method, there were cases in which sufficient improvement in inspection accuracy could not be obtained.
JP 2001-266126 A

  As described above, in the conventional photomask defect inspection apparatus, when the defect is inspected by comparing the measurement pattern data with the reference pattern data, the pixel size is reduced with respect to the entire inspection area in order to increase the inspection accuracy. As a result, there is a problem that the inspection time is increased.

  The present invention has been made in consideration of the above circumstances, and the object of the present invention is to reduce the pixel size of only the part suspected of being defective, thereby improving the inspection accuracy without increasing the inspection time. An object of the present invention is to provide a sample inspection apparatus and a sample inspection method that can be measured.

  In order to solve the above problems, the present invention adopts the following configuration.

  That is, according to one aspect of the present invention, in a sample inspection apparatus for inspecting a pattern defect of a sample to be inspected, measurement pattern data generation for generating measurement pattern data by optically measuring a pattern of a sample to be measured with a predetermined pixel size A reference pattern data generation unit that generates reference pattern data to be compared and referenced with the measurement pattern data based on design data, and the measurement pattern data and the reference pattern data are compared, and a difference between them is determined. If the value exceeds the value, the measurement pattern data is regenerated by reducing the pixel size with respect to a means for determining that there is a defect and a pattern that is determined to be defective by the means, or a pattern that is easily erroneously detected as having a defect. Means and the regenerated measurement pattern data and the reference pattern data, and the difference between them is a threshold value. And with defect and means for determining Once example, it is characterized by comprising a.

  Another aspect of the present invention is a measurement pattern for generating measurement pattern data by optically measuring a pattern of a sample to be measured with a predetermined pixel size in a sample inspection apparatus for inspecting a pattern defect of the sample to be inspected. A data generation unit, a reference pattern data generation unit that generates reference pattern data to be compared with the measurement pattern data based on a design pattern, the measurement pattern data and the reference pattern data are compared, and the difference between them is Means for determining that there is a defect when the threshold value is exceeded, and a pattern that is determined to be defective by the means, or a pattern that is likely to be erroneously detected as having a defect. Means for respectively regenerating pattern data, the regenerated measurement pattern data, and the regenerated reference pattern. Comparing the Ndeta, these differences is characterized by comprising means for determining that there is a defect Once beyond the threshold, the.

  According to another aspect of the present invention, in a sample inspection method for inspecting a pattern defect of a sample to be inspected, a step of generating measurement pattern data by optically measuring a pattern of the sample to be measured with a predetermined pixel size; The step of generating reference pattern data to be compared with the measurement pattern data based on the design data is compared with the measurement pattern data and the reference pattern data, and if the difference exceeds a threshold value, there is a defect. And when determining that there is a defect or a pattern in which a defect is likely to be erroneously detected, regenerate the measurement pattern data with the pixel size smaller for the pattern portion and regenerate Comparing the measured pattern data and the reference pattern data, and determining that there is a defect if the difference between these exceeds a threshold value; Characterized in that it contains.

  According to another aspect of the present invention, in a sample inspection apparatus for inspecting a pattern defect of a sample to be inspected, a step of optically measuring a pattern of the sample to be measured with a predetermined pixel size to generate measurement pattern data; The step of generating reference pattern data to be compared and referred to with the measurement pattern data based on the design pattern is compared with the measurement pattern data and the reference pattern data, and if the difference exceeds a threshold value, there is a defect. And when determining that there is a defect or a pattern that is likely to be erroneously detected as having a defect, the measurement pattern data and the reference pattern data in which the pixel size is made smaller for the pattern part, respectively Regenerate, compare the regenerated measurement pattern data with the reference pattern data, and these differences exceed the threshold Characterized in that it comprises a defect there and determining step, the If.

  According to the present invention, when it is determined that the pattern is a defect or a pattern that is likely to be erroneously detected as a defect, the measurement pattern data with a smaller pixel size is regenerated for the pattern portion, and the regenerated measurement pattern data By comparing and determining with reference pattern data, it is possible to perform high-precision inspection with a small pixel size for a specific portion while performing efficient inspection with a relatively large pixel size as a whole. That is, by reducing the pixel size of only the portion suspected of being defective, the inspection accuracy can be improved without causing an increase in inspection time.

  The details of the present invention will be described below with reference to the illustrated embodiments.

(First embodiment)
FIG. 1 is a schematic configuration diagram showing a photomask defect inspection apparatus according to the first embodiment of the present invention.

  In this apparatus, the inspection area where the pattern formed on the photomask 11 exists is virtually divided into strip-shaped inspection stripes having a width W as shown in FIG. 2, and the divided inspection stripes are further divided. It is assumed that the inspection is executed by controlling the operation of the XYθ table 12 so that the scanning is continuously performed.

  The photomask 11 is placed on an XYθ table 12 provided so as to be movable in the horizontal direction and the rotation direction, and the pattern formed on the photomask 11 is irradiated with light by an appropriate light source 13. Light that has passed through the photomask 11 enters the photodiode array 15 via the magnifying optical system 14. At this time, the magnifying optical system 14 is controlled, and a part of the strip-like region of the virtually divided pattern as shown in FIG. 2 is formed on the photodiode array 15 as an enlarged optical image. The

  The pattern image formed on the photodiode array 15 is photoelectrically converted by the photodiode array 15 and further A / D converted by the sensor circuit 16. These light source 13, magnifying optical system 14, photodiode array 15, and sensor circuit 16 constitute a high-magnification inspection optical system.

  The XYθ table 12 is driven by a table control circuit 22 under the control of the computer 20. The moving position of the table 12 is measured by the laser length measurement system 18 and supplied to the position circuit 26. The photomask 11 on the table 12 is transported from the autoloader 17 driven by the autoloader control circuit 21.

  The measurement pattern data output from the sensor circuit 16 is sent to the comparison circuit 25 together with data indicating the position of the photomask 11 on the XYθ table 12 output from the position circuit 26.

  On the other hand, design data used at the time of pattern formation of the photomask 11 is read from the magnetic disk 31 to the development circuit 23 through the control computer 20. In the development circuit 23, the read design data is converted into binary or multi-value image data, and this image data is sent to the reference circuit 24. The reference circuit 24 performs an appropriate filter process on the sent image data of the graphic. This is because the measurement pattern data obtained from the sensor circuit 16 is in a state in which the filter is applied due to the resolution characteristics of the magnifying optical system 14, the aperture effect of the photodiode array 15, and the like. This is for applying to the measurement pattern data.

  Then, the comparison circuit 25 compares the measurement pattern data with the design image data (reference pattern data) subjected to appropriate filter processing according to an appropriate algorithm, and determines that there is a defect if they do not match. In the figure, 32 indicates a magnetic tape device, 33 indicates a floppy (registered trademark) disk, 34 indicates a CRT, 35 indicates a pattern monitor, and 36 indicates a printer.

  The basic configuration so far is the same as that of the conventional apparatus, but in this embodiment, in addition to this, a pixel size switching circuit 28 is provided. In the pixel size switching circuit 28, when the comparison circuit 25 detects a defect, in order to generate a higher resolution image (in the sense of making the pixel size finer) of the portion, the development circuit 23 and the reference circuit 24 In addition, it has a function of changing the magnification of the magnifying optical system 14.

  In recent years, along with the miniaturization of patterns, patterns for optical proximity effect correction (hereinafter referred to as OPC patterns) tend to be frequently used. There are various shapes of OPC patterns. For example, when a one-dimensional OPC pattern as shown in FIG. 3 is arranged, a step portion (indicated by a broken-line circle in the figure) is originally defective. It is easy to misdetermine what is not a defect. However, if the size of one pixel is reduced, the probability of erroneous determination even with such a fine step shape or the like is remarkably reduced. This is a normal pixel size as shown in FIG. 4A, and even if the step is 0.5 pixel, if the pixel size is halved, it becomes a step of 1 pixel as shown in FIG. This is because shape determination is facilitated.

  However, when the pixel size is halved, if the area area to be inspected is the same, four times (2 × 2) the number of pixels must be processed, resulting in an increase in inspection time. End up. Therefore, in this embodiment, instead of simply reducing the pixel size, the pixel size switching circuit 28 is used to measure only a pattern detected as a defect or a pattern that is easily detected as a defect while reducing the pixel size.

  The operation of this embodiment will be described with reference to the flowchart of FIG.

  First, a certain stripe is inspected (step S1), and the presence or absence of a defect is determined (step S2). If no defect is detected, the process proceeds to the next stripe as in the conventional case (step S3).

  When a defect is detected in S2, a high-resolution design data image and measurement data image in which the pixel size is almost halved in the inspection stripe are regenerated and reacquired (step S4). Here, the pixel size is almost halved because it is difficult to strictly halve the magnification of the optical system. It goes without saying that a higher-accuracy image can be obtained if the number is reduced to 1/3 or 1/4 instead of half.

  The high-resolution images regenerated in this way are compared again to determine whether they are really defective or pseudo-defect (step S5). Here again, those determined to be defective are registered as defects (step S6). However, it is desirable to leave a history as a second type defect even if it is determined that it is not a defect (step S7). Note that the high-resolution comparison process may be performed for each inspection stripe, or may be performed after the entire mask is inspected.

  As described above, according to the present embodiment, when the pattern is determined to be a defect or a pattern that is likely to be erroneously detected as a defect, the measurement pattern data and the reference pattern data in which the size of the pixel is further reduced for the pattern portion are regenerated. By comparing and determining the regenerated pattern data, the defect is inspected with a small pixel size for a specific portion while performing an efficient inspection with a relatively large pixel size as a whole. Accordingly, it is possible to reduce the pixel size of only the part suspected of being defective, and to improve the inspection accuracy without increasing the inspection time.

  In addition, since it is a two-step comparison between normal pixels and high-resolution images, it is possible to set strict sensitivity in advance at the normal pixel size, enabling effective use of the apparatus and shortening the total inspection time. Become.

(Second Embodiment)
In the first embodiment, it has been described that the high-resolution image is re-acquired in both the reference pattern data and the measurement pattern data. However, in the present embodiment, only the measurement pattern data is re-generated. explain.

  In the pattern shape as shown in FIG. 3, the resolution characteristics of the pattern are different between a normal pattern and a pattern such as a step (OPC) smaller than the pixel size, and the difference between reference pattern data and measurement pattern data is large. Sometimes. In such a pattern, the degree of coincidence between the reference pattern data and the measurement pattern data can be increased by discriminating the OPC portion and the portion not so by pattern matching or the like and performing separate processing. However, it may be difficult to determine the OPC shape with the normal pixel size, and the pattern shape can be recognized more accurately by reducing the pixel size.

  In the present embodiment, it has been described that the degree of coincidence with the reference pattern data is improved by increasing the resolution on the measurement pattern data side. In addition, by increasing the pixel resolution on the reference pattern data side, It is also possible to improve the degree of coincidence with the measurement pattern data side.

  Here, the degree to which an error occurs in the generated pattern data due to the OPC portion is larger in the measurement pattern data than in the reference pattern data. Therefore, it is very effective to regenerate the measurement pattern data by reducing the pixel size for a pattern that is easily erroneously detected as a defect. On the other hand, regarding the pattern that is likely to be erroneously detected as a defect, even if the reference pattern data is regenerated by reducing the pixel size, a large effect cannot be expected unless the data is regenerated for the measurement pattern data having a large error. That is, it is effective to reduce the pixel size only for the measurement pattern data, but it is not always effective to reduce the pixel size only for the reference pattern data.

(Third embodiment)
When inspecting line width anomalies such as the line & space pattern shown in FIG. 6 and the like, if the quantization error on the reference pattern data side is large, there is a limit to the detection of line width anomalies, and comparison determination that can detect defects If the threshold value is set, pseudo defects are also detected. Therefore, when a defect due to an abnormal line width is detected, it may be caused by an error on the reference pattern data side. Therefore, the development circuit 23 regenerates a high-resolution image having, for example, a half pixel size. Thereafter, the reference circuit 24 re-synthesizes four pixels into one pixel, thereby outputting the pixel with the normal pixel size.

  By doing so, it becomes possible to generate design data with a stricter line width, which can contribute to an improvement in inspection sensitivity for abnormal line width. Here, it is possible to perform the comparison process with a high-resolution image. However, when the comparison process is performed with half the pixel size, the number of pixels to be compared is four times, so that the comparison processing time may increase. However, the comparison processing time can be shortened by returning to the normal pixel size before the comparison processing.

  On the other hand, when the shape information such as OPC or the like and the step size, which are likely to generate pseudo defects, are known in advance before the inspection, it is easy to extract the shape by image recognition from the data of the developed circuit output. Therefore, the portion determined to be an OPC pattern may be subjected to high resolution processing from the beginning without performing normal resolution processing. Thereby, further efficiency improvement can be achieved.

  Further, in order to express complicated graphic data such as an OPC pattern, generally, a graphic coefficient per unit area is drastically increased on a design pattern. Therefore, it is also effective to set a threshold value for the number of figures per unit area and automatically determine the OPC pattern for the portion exceeding this value and increase the pixel resolution.

  FIG. 7 is a block diagram showing an example in which such an OPC detection circuit is provided. A detection circuit 51 for detecting an OPC pattern from the output (reference pattern data) of the development circuit 23 is provided. When the detection circuit 51 detects OPC, reference pattern data with a smaller pixel size is regenerated.

  Further, a detection circuit 52 for detecting an OPC pattern from the output (measurement pattern data) of the sensor circuit 16 may be provided. The OPC pattern has a minute step that does not exist in a normal pattern. Therefore, the detection circuit 52 detects the presence or absence of a minute step from the measurement pattern data, and if there is a minute step, the measurement pattern data with a smaller pixel size may be regenerated.

  The pixel size can be reduced under the control of the pixel size switching circuit 28 as in the first embodiment. If the position of a pattern that is likely to be erroneously detected is known in advance, the operator may input the pattern position using a keyboard or the like.

(Fourth embodiment)
Up to this point, the means for regenerating high-resolution reference pattern data has been diverted to a circuit that processes with a normal pixel size, but in order to enable both high-resolution processing and normal pixel processing, There are cases where the circuit becomes over-spec.

  Therefore, in this embodiment, as shown in FIG. 8, circuits 53 and 54 for high resolution processing are exclusively used. That is, apart from the normal expansion circuit 23 and reference circuit 24, a high-resolution expansion circuit 53 and reference circuit 54 are provided. The area to be subjected to the high resolution processing does not need to have the inspection stripes, and only needs to be able to process about 2048 pixels, so that it can be more simplified than the normal processing system. Therefore, the high resolution development circuit 53 and the high resolution reference circuit 54 are simply provided without configuring the development circuit 23 and the reference circuit 24 in an overspec, and high resolution processing and normal pixel processing can be performed. It can be carried out.

  However, in this case, a switching circuit 55 between the input from the normal reference circuit 24 and the input from the high resolution reference circuit 54 is newly required before the comparison circuit 25. The switching of the switching circuit 55 may be performed in synchronization with a signal from the pixel size switching circuit 28.

(Modification)
The present invention is not limited to the above-described embodiments. In the embodiment, the example of the photomask as the sample to be inspected has been described. Further, conditions such as the configuration of the magnifying optical system and the magnification can be appropriately changed according to the specifications. Furthermore, the pixel size when regenerating high-precision data is not limited to ½, and can be changed as appropriate according to specifications.

  In addition, various modifications can be made without departing from the scope of the present invention.

1 is a schematic configuration diagram showing a photomask defect inspection apparatus according to a first embodiment. Explanatory drawing which shows the test | inspection stripe of a photomask. The figure which shows the example of an OPC pattern. The figure explaining the image when pixel size is halved. The flowchart for demonstrating operation | movement of 1st Embodiment. The figure explaining the example of a line & space pattern. The block diagram for demonstrating 3rd Embodiment and showing the example which provided the OPC detection circuit. The block diagram which shows the example which provided the expansion | deployment circuit and reference circuit which are for describing 4th Embodiment and perform high resolution processing.

Explanation of symbols

11 ... Photomask (inspected sample)
DESCRIPTION OF SYMBOLS 12 ... XY (theta) table 13 ... Light source 14 ... Expansion optical system 15 ... Photodiode array 16 ... Sensor circuit 17 ... Autoloader 18 ... Laser length measurement system 20 ... Computer 21 ... Autoloader control circuit 22 ... Table control circuit 23 ... Deployment circuit 24 ... reference Circuit 25 ... Comparison circuit 26 ... Position circuit 28 ... Pixel size switching circuit 31 ... Magnetic disk device 51, 52 ... OPC detection circuit 53 ... High resolution development circuit 54 ... High resolution reference circuit 55 ... Switching circuit

Claims (11)

A measurement pattern data generation unit that optically measures the pattern of the sample to be measured with a predetermined pixel size and generates measurement pattern data; and
A reference pattern data generation unit that generates reference pattern data to be compared with the measurement pattern data based on design data;
Means for comparing the measurement pattern data with the reference pattern data, and determining that there is a defect if a difference between these exceeds a threshold;
Means for regenerating measurement pattern data by reducing the pixel size for a pattern that is determined to be defective by the means, or a pattern that is likely to be erroneously detected as defective;
Means for comparing the regenerated measurement pattern data with the reference pattern data, and determining that there is a defect if a difference between these exceeds a threshold;
A sample inspection apparatus comprising: A measurement pattern data generation unit that optically measures the pattern of the sample to be measured with a predetermined pixel size and generates measurement pattern data; and
A reference pattern data generation unit that generates reference pattern data to be compared with the measurement pattern data based on a design pattern;
Means for comparing the measurement pattern data with the reference pattern data, and determining that there is a defect if a difference between these exceeds a threshold;
Means for regenerating the measurement pattern data and the reference pattern data by reducing the pixel size for a pattern that is determined to be defective by the means, or a pattern that is likely to be erroneously detected as defective,
Means for comparing the regenerated measurement pattern data and the regenerated reference pattern data, and determining that there is a defect if a difference between these exceeds a threshold;
A sample inspection apparatus comprising:   3. The sample inspection apparatus according to claim 1, wherein in the means for regenerating the pattern data, the pixel size is set to approximately half the normal size.   The sample inspection apparatus according to any one of claims 1 to 3, further comprising means for automatically detecting the erroneously detected pattern from the measurement pattern data.   5. The sample inspection according to claim 4, wherein the automatic detection means detects the presence or absence of a minute step in the measurement pattern data, and detects it as a pattern that is likely to be erroneously detected when it has a minute step. apparatus.   The sample inspection apparatus according to claim 1, further comprising means for automatically detecting the pattern that is easily erroneously detected from the reference pattern data.   7. The automatic detection means detects a pattern that is likely to be erroneously detected when the density of the number of figures existing in the design data exceeds a predetermined threshold value. The sample inspection apparatus described.   The sample inspection apparatus according to claim 1, further comprising means for inputting a pattern that is easily detected erroneously.   3. The sample inspection apparatus according to claim 2, wherein the means for regenerating the reference pattern data is provided separately from the reference pattern data generation unit. A step of optically measuring a pattern of a sample to be measured with a predetermined pixel size to generate measurement pattern data;
Generating reference pattern data to be compared with the measurement pattern data based on design data;
Comparing the measurement pattern data and the reference pattern data, and determining that there is a defect if the difference exceeds a threshold;
When it is determined that there is a defect, or when it is determined that the defect is likely to be erroneously detected, the measurement pattern data with the pixel size smaller is regenerated for the pattern portion, and the regenerated measurement pattern data and the Comparing the reference pattern data and determining that there is a defect if these differences exceed a threshold;
A sample inspection method comprising: A step of optically measuring a pattern of a sample to be measured with a predetermined pixel size to generate measurement pattern data;
Generating reference pattern data to be compared with the measurement pattern data based on a design pattern;
Comparing the measurement pattern data and the reference pattern data, and determining that there is a defect if the difference exceeds a threshold;
If it is determined that there is a defect, or if it is determined that the pattern is likely to be erroneously detected as having a defect, the measurement pattern data and reference pattern data with the pixel size smaller are regenerated for the pattern portion, and then regenerated. Comparing the measured pattern data and the reference pattern data, and determining that there is a defect if these differences exceed a threshold;
A sample inspection method comprising:

Images