JP2006190746A - Semiconductor device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device exhibiting excellent packaging properties, and to provide its manufacturing method. <P>SOLUTION: The semiconductor device comprises a wiring board 10, a first semiconductor chip 20 mounted on the first surface 14 of the wiring board 10, a first resin portion 30 for bonding the wiring board 10 and the first semiconductor chip 20 and having an outline larger than that of the first semiconductor chip 20, a second semiconductor chip 40 mounted on the second surface 16 of the wiring board 10 and smaller than the first semiconductor chip 20, and a second resin portion 50 for bonding the wiring board 10 and the second semiconductor chip 40 and having an outline larger than that of the second semiconductor chip 40. A distance from the outer circumference of the first semiconductor chip 20 to the outer circumference of the first resin portion 30 is longer than a distance from the outer circumference of the second semiconductor chip 40 to the outer circumference of the second resin portion 50. <P>COPYRIGHT: (C)2006,JPO&amp;NCIPI

Description

  The present invention relates to a semiconductor device and a manufacturing method thereof.

  A semiconductor device in which semiconductor chips are mounted on both surfaces of one wiring board is known. If flatness can be ensured when the semiconductor device is manufactured and when the semiconductor device is mounted on a circuit board or the like, a semiconductor device with excellent mountability can be provided.

An object of the present invention is to provide a semiconductor device excellent in mountability and a manufacturing method thereof.
Japanese Patent Laid-Open No. 10-284544

(1) A semiconductor device according to the present invention includes a wiring board,
A first semiconductor chip mounted on a first surface of the wiring board;
A first resin portion formed on the first surface and bonding the wiring substrate and the first semiconductor chip, and having a larger outer shape than the first semiconductor chip;
A second semiconductor chip mounted on the second surface of the wiring board and smaller than the first semiconductor chip;
A second resin portion formed on the second surface and bonding the wiring substrate and the second semiconductor chip, and having a larger outer shape than the second semiconductor chip;
Have
The distance from the outer periphery of the first semiconductor chip to the outer periphery of the first resin portion is longer than the distance from the outer periphery of the second semiconductor chip to the outer periphery of the second resin portion. According to the present invention, it is possible to provide a highly reliable semiconductor device that can ensure flatness during and after mounting.
(2) In this semiconductor device,
The distance from the outer periphery of the first semiconductor chip to the outer periphery of the first resin portion is from the outer periphery of the second semiconductor chip on the projection plane obtained by projecting the second semiconductor chip onto the first semiconductor chip. The distance to the outer periphery of the first semiconductor chip may be longer.
(3) In this semiconductor device,
External terminals are formed on the second surface of the wiring board,
The first resin portion may be formed so as to overlap the external terminal.
(4) A method for manufacturing a semiconductor device according to the present invention comprises preparing a wiring board;
Mounting a first semiconductor chip on a first surface of the wiring board;
Forming a first resin portion on the first surface having a larger outer shape than the first semiconductor chip and bonding the wiring board and the first semiconductor chip;
Mounting a second semiconductor chip smaller than the first semiconductor chip on the second surface of the wiring board; and
Forming a second resin portion on the second surface that has a larger outer shape than the second semiconductor chip and bonds the wiring substrate and the second semiconductor chip;
The distance from the outer periphery of the first semiconductor chip to the outer periphery of the first resin portion is set so that the first and second resin portions have an outer periphery of the second resin portion from the outer periphery of the second semiconductor chip. It is formed to be longer than the distance up to. According to the present invention, a semiconductor device having high flatness and excellent mountability can be manufactured.
(5) In this method of manufacturing a semiconductor device,
A projection of the first and second resin portions projected from the outer periphery of the first semiconductor chip to the outer periphery of the first resin portion by projecting the second semiconductor chip onto the first semiconductor chip. You may form so that it may become longer than the distance from the outer periphery of the said 2nd semiconductor chip in the surface to the outer periphery of the said 1st semiconductor chip.
(6) In this method of manufacturing a semiconductor device,
Forming an external terminal on the second surface of the wiring board;
The first resin portion may be formed so as to overlap with a region for forming the external terminal.

  Embodiments to which the present invention is applied will be described below with reference to the drawings. However, the present invention is not limited to the following embodiments.

  FIG. 1 is a diagram for explaining a semiconductor device according to an embodiment to which the present invention is applied. FIG. 1 is a cross-sectional view of the semiconductor device 1.

  The semiconductor device according to the present embodiment has a wiring board 10. The material and structure of the wiring substrate 10 are not particularly limited, and any substrate that is already known may be used. The wiring board 10 may be a flexible board or a rigid board. Alternatively, the wiring substrate 10 may be a tape substrate. The wiring substrate 10 may be a laminated substrate or a single layer substrate. Further, the outer shape of the wiring board 10 is not particularly limited. The wiring board 10 may have a wiring pattern 12. The wiring pattern 12 may be formed on the surface of the wiring substrate 10 or between the layers of the wiring substrate 10. The structure and material of the wiring pattern 12 are not particularly limited, and any known wiring may be used. For example, the wiring pattern 12 includes copper (Cu), chromium (Cr), titanium (Ti), nickel (Ni), titanium tungsten (Ti-W), gold (Au), aluminum (Al), nickel vanadium (NiV). , Any one of tungsten (W) may be laminated or formed in any one layer. The wiring pattern 12 may have lands 13 provided on the surface (first and second surfaces 14, 16) of the wiring substrate 10. The land 13 may be a portion used for electrical connection with an electrode of an electronic component (for example, an electrode of a semiconductor chip). The wiring pattern 12 may further include a land 15 for mounting an external terminal. The wiring board 10 has a first surface 14 and a second surface 16 opposite to the first surface 14. At this time, a surface on which a later-described first semiconductor chip 20 is mounted may be referred to as a first surface 14, and a surface on which the second semiconductor chip 40 is mounted may be referred to as a second surface 16. The land 15 may be provided on the second surface 14. The wiring board 10 may further include a protective film (not shown). The protective film may be formed so as to cover a part of the wiring pattern 12.

  The semiconductor device according to the present embodiment has a first semiconductor chip 20. The first semiconductor chip 20 may be a silicon chip, for example. The first semiconductor chip 20 may have an integrated circuit 22. The configuration of the integrated circuit 22 is not particularly limited, and may include, for example, an active element such as a transistor or a passive element such as a resistor, a coil, or a capacitor. Further, the first semiconductor chip 20 may have a plurality of electrodes 24. The electrode 24 may be electrically connected to the inside of the first semiconductor chip 20. The electrode 24 may be electrically connected to the integrated circuit 22. Alternatively, a pad that is not electrically connected to the integrated circuit 22 may be referred to as the electrode 24. The electrode 24 may include a thin flat pad and a bump formed on the pad. At this time, the material of the pad and the bump is not particularly limited. For example, aluminum or copper may be used as the pad and gold may be used as the bump.

  As shown in FIG. 1, the first semiconductor chip 20 is mounted on the wiring board 10. At this time, a surface of the wiring substrate 10 on which the first semiconductor chip 20 is mounted may be referred to as a first surface 14. That is, the first semiconductor chip 20 may be mounted on the first surface 14 of the wiring substrate 10. As shown in FIG. 1, the first semiconductor chip 20 may be mounted on the wiring board 10 so that the electrode 24 faces the wiring pattern 12 (land 13). At this time, the electrode 24 and the land 13 may be opposed and electrically connected. The electrode 24 and the land 13 may be in contact and electrically connected as shown in FIG. At this time, the electrode 24 and the land 13 may be fixed. For example, the electrode 24 and the land 13 may be bonded via a eutectic alloy (eutectic alloy bonding). However, apart from this, the electrode 24 and the land 13 may be electrically connected via conductive particles (not shown).

  As shown in FIG. 1, the semiconductor device according to the present embodiment is formed on the first surface 14 of the wiring substrate 10, and a first resin portion that bonds the wiring substrate 10 and the first semiconductor chip 20. 30. As shown in FIG. 1, the first resin portion 30 has an outer shape larger than that of the first semiconductor chip 20. That is, the first resin portion 30 includes a central portion disposed between the wiring substrate 10 and the first semiconductor chip 20 (so as to overlap the first semiconductor chip 20), and the first semiconductor chip. 20 may be included on the outer side than 20. The material of the first resin part 30 is not particularly limited, but a material having a linear expansion coefficient larger than that of the wiring board 10 may be used.

  The semiconductor device according to the present embodiment has a second semiconductor chip 40 that is smaller than the first semiconductor chip 20 and is mounted on the second surface 16 of the wiring substrate 10. As the configuration of the second semiconductor chip 40, any of the contents mentioned in the description of the first semiconductor chip 20 may be applied. The second semiconductor chip 40 may have an integrated circuit 42. Further, the second semiconductor chip 40 may have an electrode 44. The second semiconductor chip 40 may be mounted on the wiring board 10 so that the electrode 44 faces the wiring pattern 12 (land 13). At this time, the electrode 44 and the land 13 may be fixed. The second semiconductor chip 40 may be disposed so as to overlap the first semiconductor chip 20. At this time, the first and second semiconductor chips 20 and 40 may be arranged so that the centers thereof coincide with the thickness direction of the wiring board 10. That is, the centers of the first and second semiconductor chips 20, 40 may coincide with each other on the projection surface obtained by projecting the second semiconductor chip 40 onto the first semiconductor chip 20.

  As shown in FIG. 1, the semiconductor device according to the present embodiment is formed on the second surface 16 of the wiring substrate 10, and a second resin portion that bonds the wiring substrate 10 and the second semiconductor chip 40. 50. As shown in FIG. 1, the second resin portion 50 has an outer shape larger than that of the second semiconductor chip 40. That is, the second resin portion 50 includes a central portion disposed between the wiring substrate 10 and the second semiconductor chip 40 (so as to overlap the second semiconductor chip 40), and the second semiconductor chip. Side portions disposed outside 40 may be included. The material of the 2nd resin part 50 is not specifically limited, For example, you may utilize the same material as the wiring board 10 or the 1st resin part 30. FIG.

  In the semiconductor device according to the present embodiment, the distance from the outer periphery of the first semiconductor chip 20 to the outer periphery of the first resin portion 30 is from the outer periphery of the second semiconductor chip 40 to the outer periphery of the second resin portion 50. Longer than the distance. In other words, the width of the side part of the first resin part is wider than the width of the side part of the second resin part. At this time, the distance from the outer periphery of the first semiconductor chip 20 to the outer periphery of the first resin portion 30 is the second semiconductor chip 40 on the projection plane in which the second semiconductor chip 40 is projected onto the first semiconductor chip 20. The distance from the outer periphery of the first semiconductor chip 20 to the outer periphery of the first semiconductor chip 20 may be longer. Further, when the semiconductor device has an external terminal 60 (described later), the first resin portion 30 may be formed so as to overlap the external terminal 60.

  The semiconductor device according to the present embodiment may have an external terminal 60 as shown in FIG. The external terminal 60 may be provided on the second surface 16 of the wiring board 10. The region where the external terminal 60 is disposed is not particularly limited. The external terminal 60 may be disposed only in a region overlapping with the first semiconductor chip 20 (Fan-In type), for example. Alternatively, the external terminal 60 may be disposed only outside the region overlapping with the first semiconductor chip 20 (Fan-Out type). Alternatively, the external terminal 60 may be provided inside and outside the region overlapping with the first semiconductor chip 20 (Fan-In / Out type). The external terminal 60 may be provided on the land 15 of the wiring pattern 12.

  The semiconductor device 1 according to the present embodiment may be configured as described above. As described above, in the semiconductor device 1, semiconductor chips (first and second semiconductor chips 20 and 40) having different sizes are mounted on both surfaces of one wiring board (wiring board 10). A semiconductor device is usually heated and cooled by a temperature cycle test, when mounted on a circuit board, or by a change in environment after mounting. Under the influence of this heating and cooling, the wiring board may expand and contract. By the way, the semiconductor chip often has a lower coefficient of linear expansion than the wiring board, and even when heated and cooled, the size of the semiconductor chip is less likely to change compared to the wiring board. For this reason, when a semiconductor chip is mounted on the wiring board, the area overlapping the semiconductor chip on the surface of the wiring board is restricted by the semiconductor chip, so that the size hardly changes. When semiconductor chips of different sizes are mounted on both surfaces of one wiring board (see FIG. 1), the area of the region where expansion / contraction is restricted on both surfaces of one wiring board Therefore, the amount of change in size due to expansion / contraction may be different on both sides of the wiring board. Specifically, the surface (the second semiconductor chip 40 is mounted) on which the smaller semiconductor chip is mounted than the surface (the first surface 14 on which the first semiconductor chip 20 is mounted) on which the large semiconductor chip is mounted. The formed second surface 16) may have a larger amount of expansion / contraction due to heating / cooling. Then, the wiring board may be warped due to the difference in expansion and contraction. Incidentally, in the semiconductor device 1, as described above, the distance from the outer periphery of the first semiconductor chip 20 to the outer periphery of the first resin portion 30 is the second resin portion from the outer periphery of the second semiconductor chip 40. It is longer than the distance to the outer periphery of 50. In other words, the resin portion is formed in a wide area on the surface on which the large semiconductor chip is mounted. Further, if a resin having a larger linear expansion coefficient than the wiring substrate 10 is used as the first resin portion 30, the first resin portion 30 expands and contracts more than the wiring substrate 10. Therefore, according to the semiconductor device 1, the amount of expansion / contraction of the first surface 14 of the wiring board 10 increases due to the influence of expansion / contraction of the first resin portion 30. That is, according to the semiconductor device 1, the difference between the expansion and contraction amounts of the first and second surfaces 14 and 16 can be reduced. Therefore, it is possible to provide a semiconductor device that is less likely to warp the semiconductor device and has excellent mountability. The distance from the outer periphery of the first semiconductor chip 20 to the outer periphery of the first resin portion 30 is such that the second semiconductor chip 40 on the projection plane where the second semiconductor chip 40 is projected onto the first semiconductor chip 20. The distance from the outer periphery to the outer periphery of the first semiconductor chip 20 may be longer. By making the distance from the outer periphery of the first semiconductor chip 20 to the outer periphery of the first resin portion 30 larger than the difference in size between the first and second semiconductor chips 20 and 40, the mountability is further improved. A semiconductor device can be provided. Further, the first resin portion 30 may be formed so as to overlap the external terminal 60. According to this, since the wiring substrate 10 can be flattened in the region where the external terminal 60 is formed, a semiconductor device having excellent mountability can be provided. The first resin portion 30 may be formed so as to reach the side surface of the wiring substrate 10 (not shown). FIG. 2 shows a circuit board 1000 on which the semiconductor device 1 is mounted. As an electronic device having the semiconductor device 1, FIG. 3 shows a notebook personal computer 2000 and FIG. 4 shows a mobile phone 3000.

  A method for manufacturing a semiconductor device according to an embodiment to which the present invention is applied will be described below. FIGS. 5A to 8 are diagrams for explaining a method of manufacturing a semiconductor device according to the embodiment to which the present invention is applied.

  The manufacturing method of the semiconductor device according to the present embodiment includes preparing the wiring board 10. Any of the contents already described may be applied to the configuration of the wiring board 10.

  The method for manufacturing a semiconductor device according to the present embodiment includes mounting the first semiconductor chip 20 on the wiring substrate 10. Hereinafter, this step will be described. First, the resin material 32 may be provided on the first surface 14 of the wiring board 10 (see FIG. 5A). The resin material 32 may be provided in a paste form or a film form. The resin material 32 may be an anisotropic conductive material in which conductive particles are dispersed. Alternatively, the resin material 32 may be an insulating material. Then, as shown in FIG. 5A, the first semiconductor chip 20 may be disposed on the wiring substrate 10. Thereafter, as shown in FIG. 5B, the first semiconductor chip 20 is mounted on the wiring substrate 10. The first semiconductor chip 20 may be mounted on the wiring board 10 by pressing toward the wiring board 10 while spreading the resin material 32. At this time, the electrode 24 and the wiring pattern 12 (land 13) may be opposed to each other and electrically connected. The step of mounting the first semiconductor chip 20 may be performed while heating at least one of the wiring substrate 10 and the first semiconductor chip 20. In addition, you may adhere the electrode 24 and the land 13 by this process. For example, by forming a eutectic alloy layer between the electrode 24 and the land 13, both may be joined (eutectic alloy joining).

  As shown in FIG. 6, the method for manufacturing a semiconductor device according to the present embodiment includes a first resin portion that bonds the wiring substrate 10 and the first semiconductor chip 20 to the first surface 14 of the wiring substrate 10. Forming 30. The first resin portion 30 may be formed by curing the resin material 32. The method for curing the resin material 32 is not particularly limited, and any method suitable for the resin material 32 may be selected. The resin material 32 may be cured by heating, for example. The first resin part 30 is formed so as to have an outer shape larger than that of the first semiconductor chip 20. The first resin portion 30 may be formed so as to overlap with a region (land 15) for forming the external terminal 60. At this time, the first resin portion 30 may be formed so as to reach the side surface of the wiring substrate 10 (not shown). The size of the first resin portion 30 may be controlled by adjusting the amount of the resin material 32 or changing the surface property of the first surface 14. The material of the 1st resin part 30 is not specifically limited, For example, you may utilize the material with a larger linear expansion coefficient than the wiring board 10. FIG.

  The method for manufacturing a semiconductor device according to the present embodiment includes mounting the second semiconductor chip 40 on the second surface 16 of the wiring substrate 10. Any of the contents described in the first semiconductor chip 20 may be applied to the second semiconductor chip 40. The second semiconductor chip 40 may have an integrated circuit 42. Further, the second semiconductor chip 40 may have an electrode 44. Further, the second semiconductor chip 40 is a semiconductor chip smaller than the first semiconductor chip 20. The method for mounting the second semiconductor chip 40 is not particularly limited. For example, a resin material 52 is provided on the second surface 16 (see FIG. 7A), and then the second semiconductor chip 40 is pressed toward the wiring substrate 10 while spreading the resin material 52, thereby wiring. The second semiconductor chip 40 may be mounted on the substrate 10 (see FIG. 7B). At this time, the electrode 44 of the second semiconductor chip 40 and the land 13 of the wiring board 10 may be opposed to each other and electrically connected. The second semiconductor chip 40 may be mounted while heating at least one of the wiring substrate 10 and the second semiconductor chip 40. The electrode 44 and the land 13 may be fixed by this step.

  As shown in FIG. 8, the method for manufacturing a semiconductor device according to the present embodiment has a second resin portion that bonds the wiring substrate 10 and the second semiconductor chip 40 to the second surface 16 of the wiring substrate 10. Forming 50. The second resin portion 50 may be formed by curing the resin material 52. The second resin portion 50 is formed to have a larger outer shape than the second semiconductor chip 40. The size of the second resin portion 50 may be controlled by adjusting the amount of the resin material 52 or changing the surface property of the second surface 16.

  Note that the method of mounting the first and second semiconductor chips 20 and 40 on the wiring board 10 is not limited to the above-described contents. For example, the first and second semiconductor chips 20 and 40 may be mounted simultaneously. Further, when the first and second semiconductor chips 20 and 40 are separately mounted, any of the first and second semiconductor chips 20 and 40 may be mounted first. Further, the resin materials 32 and 52 may be provided after the first and second semiconductor chips 20 and 40 are mounted.

  In the semiconductor device manufacturing method according to the present embodiment, the first and second resin portions 30 and 50 are separated from each other by the distance from the outer periphery of the first semiconductor chip 20 to the outer periphery of the first resin portion 30. It is formed to be longer than the distance from the outer periphery of the semiconductor chip 40 to the outer periphery of the second resin portion 50. At this time, the distance from the outer periphery of the first semiconductor chip 20 to the outer periphery of the first resin portion 30 between the first and second resin portions 30 and 50 is changed from the first semiconductor chip 20 to the second semiconductor chip. 40 may be formed so as to be longer than the distance from the outer periphery of the second semiconductor chip 40 to the outer periphery of the first semiconductor chip 20 on the projection surface onto which 40 is projected.

  The manufacturing method of the semiconductor device according to the present embodiment may include forming the external terminal 60 on the second surface 16 of the wiring substrate 10. The semiconductor device 1 may be manufactured through the above steps (see FIG. 1). Generally, when a semiconductor device is manufactured, heat is applied to the wiring board. Specifically, the process of mounting the first and second semiconductor chips 20 and 40 on the wiring substrate 10 and the process of curing the resin materials 32 and 52 may be performed in a heated environment. That is, the wiring board may be heated and cooled in the process of manufacturing the semiconductor device. Therefore, the wiring board 10 may expand and contract in the process of manufacturing the semiconductor device. When semiconductor chips having different sizes are mounted on the respective surfaces of the wiring board, the amount of expansion / contraction may be different on both surfaces of the wiring board. Specifically, the surface (the second semiconductor chip 40 is mounted) on which the smaller semiconductor chip is mounted than the surface (the first surface 14 on which the first semiconductor chip 20 is mounted) on which the large semiconductor chip is mounted. The formed second surface 16) may have a larger amount of expansion / contraction due to heating / cooling. Then, due to the difference in expansion and contraction, the wiring substrate 10 may be warped in the process of manufacturing the semiconductor device. By the way, in the manufacturing method of the semiconductor device according to the present embodiment, as described above, the first and second resin portions 30 and 50 are connected to the first resin portion 30 from the outer periphery of the first semiconductor chip 20. The distance to the outer periphery of the second semiconductor chip 40 is longer than the distance from the outer periphery of the second semiconductor chip 40 to the outer periphery of the second resin portion 50. Therefore, the amount of expansion / contraction of the first surface 14 can be increased, and the difference between the amount of expansion / contraction of the first and second surfaces 14, 16 of the wiring board 10 can be reduced. Therefore, it is possible to provide a semiconductor device having a flat wiring substrate 10 and excellent mountability.

  In addition, this invention is not limited to embodiment mentioned above, A various deformation | transformation is possible. For example, the present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same objects and effects). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that achieves the same effect as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

FIG. 1 is a diagram for explaining a semiconductor device according to an embodiment to which the present invention is applied. FIG. 2 is a diagram showing a circuit board on which a semiconductor device according to an embodiment to which the present invention is applied is mounted. FIG. 3 is a diagram showing an electronic apparatus having a semiconductor device according to an embodiment to which the present invention is applied. FIG. 4 is a diagram showing an electronic apparatus having a semiconductor device according to an embodiment to which the present invention is applied. 5A and 5B are diagrams for explaining a method for manufacturing a semiconductor device according to an embodiment to which the present invention is applied. FIG. 6 is a diagram for explaining a method of manufacturing a semiconductor device according to an embodiment to which the present invention is applied. 7A and 7B are views for explaining a method for manufacturing a semiconductor device according to an embodiment to which the present invention is applied. FIG. 8 is a diagram for explaining a method of manufacturing a semiconductor device according to an embodiment to which the present invention is applied.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Wiring board, 12 ... Wiring pattern, 13 ... Land, 15 ... Land, 20 ... 1st semiconductor chip, 22 ... Integrated circuit, 24 ... Electrode, 30 ... 1st resin part, 32 ... Resin material, 40 ... 2nd semiconductor chip, 42 ... integrated circuit, 44 ... electrode, 50 ... 2nd resin part, 52 ... resin material, 60 ... external terminal

Claims (6)

A wiring board;
A first semiconductor chip mounted on a first surface of the wiring board;
A first resin portion formed on the first surface and bonding the wiring substrate and the first semiconductor chip, and having a larger outer shape than the first semiconductor chip;
A second semiconductor chip mounted on the second surface of the wiring board and smaller than the first semiconductor chip;
A second resin portion formed on the second surface and bonding the wiring substrate and the second semiconductor chip, and having a larger outer shape than the second semiconductor chip;
Have
The distance from the outer periphery of the first semiconductor chip to the outer periphery of the first resin part is longer than the distance from the outer periphery of the second semiconductor chip to the outer periphery of the second resin part. The semiconductor device according to claim 1,
The distance from the outer periphery of the first semiconductor chip to the outer periphery of the first resin portion is from the outer periphery of the second semiconductor chip on the projection plane obtained by projecting the second semiconductor chip onto the first semiconductor chip. A semiconductor device longer than the distance to the outer periphery of the first semiconductor chip. The semiconductor device according to claim 1 or 2,
External terminals are formed on the second surface of the wiring board,
The first resin portion is a semiconductor device formed so as to overlap the external terminal. Preparing a wiring board,
Mounting a first semiconductor chip on a first surface of the wiring board;
Forming a first resin portion on the first surface that has a larger outer shape than the first semiconductor chip and bonds the wiring substrate and the first semiconductor chip;
Mounting a second semiconductor chip smaller than the first semiconductor chip on the second surface of the wiring board; and
Forming a second resin portion on the second surface that has a larger outer shape than the second semiconductor chip and bonds the wiring substrate and the second semiconductor chip;
The distance between the first and second resin portions from the outer periphery of the first semiconductor chip to the outer periphery of the first resin portion is such that the outer periphery of the second semiconductor chip is the outer periphery of the second resin portion. The manufacturing method of the semiconductor device formed so that it may become longer than the distance to. In the manufacturing method of the semiconductor device according to claim 4,
A projection of the first and second resin portions projected from the outer periphery of the first semiconductor chip to the outer periphery of the first resin portion by projecting the second semiconductor chip onto the first semiconductor chip. A method of manufacturing a semiconductor device, wherein the surface is formed to be longer than the distance from the outer periphery of the second semiconductor chip to the outer periphery of the first semiconductor chip. In the manufacturing method of the semiconductor device according to claim 4 or 5,
Forming an external terminal on the second surface of the wiring board;
A method of manufacturing a semiconductor device, wherein the first resin portion is formed so as to overlap with a region for forming the external terminal.

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