JP2006179972A - Surface acoustic wave device - Google Patents

Surface acoustic wave device Download PDF

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JP2006179972A
JP2006179972A JP2004368189A JP2004368189A JP2006179972A JP 2006179972 A JP2006179972 A JP 2006179972A JP 2004368189 A JP2004368189 A JP 2004368189A JP 2004368189 A JP2004368189 A JP 2004368189A JP 2006179972 A JP2006179972 A JP 2006179972A
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protective film
connection pad
insulating substrate
land portion
bonding
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Hideki Kondo
秀樹 近藤
Hideaki Takeuchi
秀彰 武内
Hitoshi Sasaki
等 佐々木
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Alps Alpine Co Ltd
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Alps Electric Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface acoustic wave device which will not peel due to external shocks, has proper operability and productivity, and allowing confirmation of the connection state. <P>SOLUTION: In this surface acoustic wave device, a protective film 7, made of a silicon oxide covering an interdigital transducer 5 provided on the bottom surface of a piezoelectric substrate 4, is bonded by anodic boding to a bonding film 3 made of a low melting point glass containing a silicon oxide or oxygen and provided on the top surface of an insulating substrate 1. In this way, for the entire external periphery surrounding a space 8, the protective film 7 is bonded to the bonding film 3 by anodic bonding, and an adhesion portion is formed. Thus, the device can be obtained which enables easy operation and has satisfactory productivity, has stiff bonding degree between the protective film 7 and the bonding film 3, and has no peeling between the protective film 7 and the bonding film 3 due to the external shock. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は表面弾性波フィルタ等に使用して好適な表面弾性波装置に関する。   The present invention relates to a surface acoustic wave device suitable for use in a surface acoustic wave filter or the like.

図４は従来の表面弾性波装置の要部断面図で、従来の表面弾性波装置の構成を図４に基づいて説明すると、絶縁基体５１の上面には、一対の外部引出用パッド５２が設けられている。
圧電基板５３の下面には、櫛歯電極５４と、この櫛歯電極５４に接続された接続パッド５５と、この接続パッド５５の一部を除いた状態で、櫛歯電極５４を覆う酸化シリコンからなる保護膜５６が設けられている。 FIG. 4 is a cross-sectional view of the main part of a conventional surface acoustic wave device. The structure of the conventional surface acoustic wave device will be described with reference to FIG. 4. A pair of external lead pads 52 are provided on the upper surface of the insulating substrate 51. It has been.
The lower surface of the piezoelectric substrate 53 is made of a comb-tooth electrode 54, a connection pad 55 connected to the comb-tooth electrode 54, and silicon oxide covering the comb-tooth electrode 54 in a state where a part of the connection pad 55 is removed. A protective film 56 is provided.

また、接続パッド５５の一部を除いた状態で、感光性樹脂５７が保護膜５６上に形成され、保護膜５６と感光性樹脂５７とで囲まれた箇所にバンプ５８が設けられ、このバンプ５８によって、外部引出用パッド５２と接続パッド５５が接続されると共に、感光性樹脂５７によって絶縁基板５１が接合されて、従来の表面弾性波装置が構成されている。（例えば、特許文献１参照）   In addition, a photosensitive resin 57 is formed on the protective film 56 with a part of the connection pad 55 removed, and bumps 58 are provided at locations surrounded by the protective film 56 and the photosensitive resin 57. 58, the external lead pad 52 and the connection pad 55 are connected, and the insulating substrate 51 is joined by the photosensitive resin 57 to constitute a conventional surface acoustic wave device. (For example, see Patent Document 1)

このような従来の表面弾性波装置は、感光性樹脂５７が保護膜５６上にスピンコートや塗布によって形成されて、感光性樹脂５７と保護膜５６が接着されるため、両者間の接着度合いが弱く、外部衝撃等によって、感光性樹脂５７と保護膜５６間が剥がれる。
また、感光性樹脂５７によって絶縁基板５１が接合されるため、その接合において、感光性樹脂５７を押圧、加熱して硬化させる必要があり、その作業が面倒である上に、感光性樹脂５７と絶縁基板５１の接合度合いが弱く、外部衝撃等によって、感光性樹脂５７と絶縁基板５１間が剥がれる。
更に、バンプ５８による外部引出用パッド５２と接続パッド５５の接続は、押圧と加熱によって行われるため、その作業が面倒である上に、バンプ５８は非露出状態であるため、接続状態の目視による確認ができない。 In such a conventional surface acoustic wave device, the photosensitive resin 57 is formed on the protective film 56 by spin coating or coating, and the photosensitive resin 57 and the protective film 56 are bonded. The photosensitive resin 57 and the protective film 56 are peeled off by an external impact or the like.
Further, since the insulating substrate 51 is bonded by the photosensitive resin 57, it is necessary to press and heat the photosensitive resin 57 to be cured in the bonding, and the work is troublesome. The degree of bonding of the insulating substrate 51 is weak, and the photosensitive resin 57 and the insulating substrate 51 are peeled off by an external impact or the like.
Furthermore, since the connection between the external lead pad 52 and the connection pad 55 by the bump 58 is performed by pressing and heating, the work is troublesome and the bump 58 is in an unexposed state, so that the connection state is visually checked. I can't confirm.

特開平１１−１５０４４１号公報JP-A-11-150441

従来の表面弾性波装置は、感光性樹脂５７が保護膜５６上にスピンコートや塗布によって形成されて、感光性樹脂５７と保護膜５６が接着されるため、両者間の接着度合いが弱く、外部衝撃等によって、感光性樹脂５７と保護膜５６間が剥がれるという問題がある。
また、感光性樹脂５７によって絶縁基板５１が接合されるため、その接合において、感光性樹脂５７を押圧、加熱して硬化させる必要があり、その作業が面倒である上に、感光性樹脂５７と絶縁基板５１の接合度合いが弱く、外部衝撃等によって、感光性樹脂５７と絶縁基板５１間が剥がれるという問題がある。
更に、バンプ５８による外部引出用パッド５２と接続パッド５５の接続は、押圧と加熱によって行われるため、その作業が面倒である上に、バンプ５８は非露出状態であるため、接続状態の目視による確認ができないという問題がある。 In the conventional surface acoustic wave device, the photosensitive resin 57 is formed on the protective film 56 by spin coating or coating, and the photosensitive resin 57 and the protective film 56 are bonded. There is a problem that the photosensitive resin 57 and the protective film 56 are peeled off by an impact or the like.
Further, since the insulating substrate 51 is bonded by the photosensitive resin 57, it is necessary to press and heat the photosensitive resin 57 to be cured in the bonding, and the work is troublesome. There is a problem that the degree of bonding of the insulating substrate 51 is weak, and the photosensitive resin 57 and the insulating substrate 51 are peeled off by an external impact or the like.
Furthermore, since the connection between the external lead pad 52 and the connection pad 55 by the bump 58 is performed by pressing and heating, the work is troublesome and the bump 58 is in an unexposed state, so that the connection state is visually checked. There is a problem that it cannot be confirmed.

そこで、本発明は外部衝撃による剥がれが無く、作業性や生産性が良好で、接続状態の確認ができる表面弾性波装置を提供することを目的とする。   SUMMARY OF THE INVENTION An object of the present invention is to provide a surface acoustic wave device that is free from peeling due to an external impact, has good workability and productivity, and can confirm a connection state.

上記課題を解決するための第１の解決手段として、圧電基板と、この圧電基板の下面に設けられた櫛歯電極、及びこの櫛歯電極に接続された接続パッドと、前記圧電基板の下方に対向して配置された絶縁基板と、この絶縁基板に設けられたランド部と、このランド部と前記接続パッド間を接続する接続導体とを備え、前記圧電基板の下面には、少なくとも前記櫛歯電極を覆う酸化シリコンからなる保護膜を有すると共に、前記絶縁基板の上面には、酸化シリコン、或いは酸素を含有した低融点ガラスからなる接合膜が設けられ、前記保護膜と前記接合膜間の前記櫛歯電極に対向する箇所には、空間部が設けられると共に、前記空間部を取り巻く全外周部は、前記保護膜と前記接合膜が陽極接合によって接合されて密着部が形成され、この密着部によって前記空間部が密封された構成とした。   As a first means for solving the above problems, a piezoelectric substrate, a comb electrode provided on the lower surface of the piezoelectric substrate, a connection pad connected to the comb electrode, and a lower portion of the piezoelectric substrate. An insulating substrate disposed oppositely, a land portion provided on the insulating substrate, and a connection conductor connecting the land portion and the connection pad, and at least the comb teeth on the lower surface of the piezoelectric substrate A protective film made of silicon oxide covering the electrode is provided, and a bonding film made of low melting point glass containing silicon oxide or oxygen is provided on the upper surface of the insulating substrate, and the bonding film between the protective film and the bonding film is provided. A space portion is provided at a location facing the comb-teeth electrode, and an entire outer peripheral portion surrounding the space portion is formed by bonding the protective film and the bonding film by anodic bonding to form an adhesion portion. And a configuration in which the space portion is sealed by.

また、第２の解決手段として、前記保護膜は、前記櫛歯電極に対向する箇所を薄くして、前記空間部を形成した構成とした。
また、第３の解決手段として、前記接合膜は、前記櫛歯電極に対向する箇所を薄くして、前記空間部を形成した構成とした。 As a second solution, the protective film has a configuration in which the space portion is formed by thinning a portion facing the comb electrode.
As a third solution, the bonding film has a configuration in which the space portion is formed by thinning a portion facing the comb electrode.

また、第４の解決手段として、前記ランド部が前記絶縁基板の下面に設けられると共に、前記空間部から外れた位置で、前記ランド部と前記接続パッド間が前記接続導体によって接続され、前記接続パッドを露出するために前記接続パッドと前記ランド部の間において、前記絶縁基板、前記接合膜、及び前記保護膜に跨って孔が設けられ、前記孔の内壁に設けられた前記接続導体によって、前記ランド部と前記接続パッド間が接続された構成とした。   As a fourth solution, the land portion is provided on the lower surface of the insulating substrate, and the land portion and the connection pad are connected by the connection conductor at a position away from the space portion, and the connection Between the connection pad and the land portion to expose the pad, a hole is provided across the insulating substrate, the bonding film, and the protective film, and the connection conductor provided on the inner wall of the hole, The land portion and the connection pad are connected.

また、第５の解決手段として、前記ランド部が前記絶縁基板の下面に設けられると共に、前記空間部から外れた位置で、前記ランド部と前記接続パッド間が前記接続導体によって接続され、前記接続パッドと前記ランド部を通る位置において、前記絶縁基板、前記接合膜、前記保護膜、及び前記圧電基板を上下方向に貫通する貫通孔を有し、前記貫通孔の内壁に設けられた前記接続導体によって、前記ランド部と前記接続パッド間が接続された構成とした。   Further, as a fifth solving means, the land portion is provided on the lower surface of the insulating substrate, and the land portion and the connection pad are connected by the connection conductor at a position away from the space portion, and the connection The connection conductor provided on the inner wall of the through hole, having a through hole penetrating the insulating substrate, the bonding film, the protective film, and the piezoelectric substrate in a vertical direction at a position passing through the pad and the land portion Thus, the land portion and the connection pad are connected.

また、第６の解決手段として、前記ランド部が前記絶縁基板の下面に設けられると共に、前記空間部から外れた位置で、前記ランド部と前記接続パッド間が前記接続導体によって接続され、前記接続パッドを露出するために前記接続パッドと前記ランド部の間において、前記絶縁基板、前記接合膜、及び前記保護膜に跨って設けられた縦孔と、前記縦孔に繋がるように、少なくとも前記保護膜と前記接合膜の側面側に設けられた横孔を有し、前記縦孔と前記横孔の内壁に設けられた前記接続導体によって、前記ランド部と前記接続パッド間が接続された構成とした。   As a sixth solution, the land portion is provided on a lower surface of the insulating substrate, and the land portion and the connection pad are connected by the connection conductor at a position away from the space portion, and the connection In order to expose the pad, between the connection pad and the land portion, at least the protection so as to be connected to the vertical hole and the vertical hole provided across the insulating substrate, the bonding film, and the protective film A lateral hole provided on the side surface of the film and the bonding film, and the land and the connection pad are connected by the connection conductor provided on the vertical hole and an inner wall of the horizontal hole; did.

本発明の表面弾性波装置は、圧電基板と、この圧電基板の下面に設けられた櫛歯電極、及びこの櫛歯電極に接続された接続パッドと、圧電基板の下方に対向して配置された絶縁基板と、この絶縁基板に設けられたランド部と、このランド部と接続パッド間を接続する接続導体とを備え、圧電基板の下面には、少なくとも櫛歯電極を覆う酸化シリコンからなる保護膜を有すると共に、絶縁基板の上面には、酸化シリコン、或いは酸素を含有した低融点ガラスからなる接合膜が設けられ、保護膜と接合膜間の櫛歯電極に対向する箇所には、空間部が設けられると共に、空間部を取り巻く全外周部は、保護膜と接合膜が陽極接合によって接合されて密着部が形成され、この密着部によって空間部が密封された構成とした。
即ち、空間部を取り巻く全外周部は、保護膜と接合膜が陽極接合によって接合されて密着部が形成されため、その作業が簡単で、生産性が良い上に、保護膜と接合膜間の接合度合いが強固で、外衝撃等によって、保護膜と接合膜間の剥がれのないものが得られる。
また、絶縁基板の上面には、酸化シリコン、或いは酸素を含む低融点ガラスからなる接合膜が設けられているため、絶縁基板と接合膜間の接合度合いが強固で、外衝撃等によって、絶縁基板と接合膜間の剥がれのないものが得られる。
また、接合膜を酸化シリコンで形成すると、保護膜と同一材料となって、熱膨張係数が一致し、接合度合いが強固で、剥がれなく、また、接合膜を低融点ガラスで形成すると、接合の際の加熱温度を低くでき、圧電基板の熱膨張による変形を防ぐことができる。
更に、櫛歯電極が保護膜によって被覆されることによって、櫛歯電極の温度特性の変化が小さくなって、性能の良いものが得られる。 A surface acoustic wave device according to the present invention is arranged to face a piezoelectric substrate, a comb electrode provided on the lower surface of the piezoelectric substrate, a connection pad connected to the comb electrode, and a lower side of the piezoelectric substrate. A protective film comprising an insulating substrate, a land portion provided on the insulating substrate, and a connection conductor connecting the land portion and the connection pad, and a protective film made of silicon oxide covering at least the comb-tooth electrode on the lower surface of the piezoelectric substrate And a bonding film made of low-melting glass containing silicon oxide or oxygen is provided on the upper surface of the insulating substrate, and a space portion is provided at a position facing the comb electrode between the protective film and the bonding film. In addition to being provided, the entire outer peripheral portion surrounding the space portion is configured such that the protective film and the bonding film are bonded by anodic bonding to form a close contact portion, and the space portion is sealed by this close contact portion.
That is, since the protective film and the bonding film are bonded to each other by anodic bonding to form an adhesion portion on the entire outer periphery surrounding the space portion, the work is easy and the productivity is good, and the protective film and the bonding film are not separated. The degree of bonding is strong, and a film with no peeling between the protective film and the bonding film can be obtained by external impact or the like.
In addition, since a bonding film made of silicon oxide or low-melting glass containing oxygen is provided on the upper surface of the insulating substrate, the degree of bonding between the insulating substrate and the bonding film is strong, and due to external impact or the like, the insulating substrate As a result, there can be obtained a film without peeling between the bonding films.
In addition, when the bonding film is formed of silicon oxide, it becomes the same material as the protective film, the thermal expansion coefficients are the same, the degree of bonding is strong, does not peel off, and when the bonding film is formed of low-melting glass, The heating temperature at that time can be lowered, and deformation due to thermal expansion of the piezoelectric substrate can be prevented.
Furthermore, when the comb electrode is covered with a protective film, a change in temperature characteristics of the comb electrode is reduced, and a good performance can be obtained.

また、保護膜は、櫛歯電極に対向する箇所を薄くして、空間部を形成したため、その構成が簡単で、生産性の良好なものが得られる。   Further, since the protective film has a space portion formed by thinning the portion facing the comb electrode, a structure with a simple structure and good productivity can be obtained.

また、接合膜は、櫛歯電極に対向する箇所を薄くして、空間部を形成したため、その構成が簡単で、生産性の良好なものが得られる。   Moreover, since the part which opposes a comb-tooth electrode was made thin and the space part was formed, the structure of the joining film | membrane is simple and favorable productivity is obtained.

また、ランド部が絶縁基板の下面に設けられると共に、空間部から外れた位置で、ランド部と接続パッド間が接続導体によって接続され、接続パッドを露出するために接続パッドとランド部の間において、絶縁基板、接合膜、及び保護膜に跨って孔が設けられ、孔の内壁に設けられた接続導体によって、ランド部と接続パッド間が接続されたため、接続導体が外部から目視等によって確認できて、検査が容易であると共に、メッキによって接続導体が形成できて、生産性の良好なものが得られる。   In addition, the land portion is provided on the lower surface of the insulating substrate, and the land portion and the connection pad are connected by a connection conductor at a position away from the space portion, and the connection pad and the land portion are exposed to expose the connection pad. Since the hole is provided across the insulating substrate, the bonding film, and the protective film, and the land portion and the connection pad are connected by the connection conductor provided on the inner wall of the hole, the connection conductor can be visually confirmed from the outside. Thus, the inspection is easy, and the connection conductor can be formed by plating, so that a product with good productivity can be obtained.

また、ランド部が絶縁基板の下面に設けられると共に、空間部から外れた位置で、ランド部と接続パッド間が接続導体によって接続され、接続パッドとランド部を通る位置において、絶縁基板、接合膜、保護膜、及び圧電基板を上下方向に貫通する貫通孔を有し、貫通孔の内壁に設けられた接続導体によって、ランド部と接続パッド間が接続されたため、接続導体が外部から目視できて、検査が容易であると共に、メッキによって接続導体が確実に形成できて、生産性の良好なものが得られる。   Further, the land portion is provided on the lower surface of the insulating substrate, and the land portion and the connection pad are connected by the connection conductor at a position away from the space portion, and the insulating substrate and the bonding film are disposed at a position passing through the connection pad and the land portion. In addition, the protective film and the piezoelectric substrate have a through-hole penetrating in the vertical direction, and the connection conductor provided on the inner wall of the through-hole connects the land portion and the connection pad. The inspection is easy, and the connection conductor can be reliably formed by plating, so that a product with good productivity can be obtained.

また、ランド部が絶縁基板の下面に設けられると共に、空間部から外れた位置で、ランド部と接続パッド間が接続導体によって接続され、接続パッドを露出するために接続パッドとランド部の間において、絶縁基板、接合膜、及び保護膜に跨って設けられた縦孔と、縦孔に繋がるように、少なくとも保護膜と接合膜の側面側に設けられた横孔を有し、縦孔と横孔の内壁に設けられた接続導体によって、ランド部と接続パッド間が接続されたため、接続導体が外部から目視できて、検査が容易であると共に、メッキによって接続導体が確実に形成できて、生産性の良好なものが得られる。   In addition, the land portion is provided on the lower surface of the insulating substrate, and the land portion and the connection pad are connected by a connection conductor at a position away from the space portion, and the connection pad and the land portion are exposed to expose the connection pad. A vertical hole provided across the insulating substrate, the bonding film, and the protective film, and a horizontal hole provided at least on the side surface of the protective film and the bonding film so as to be connected to the vertical hole. The connection conductor provided on the inner wall of the hole connects the land and the connection pad, so that the connection conductor can be visually observed from the outside, inspection is easy, and the connection conductor can be reliably formed by plating. Good properties can be obtained.

本発明の表面弾性波装置に係る図面を説明すると、図１は本発明の表面弾性波装置の第１実施例に係る要部断面図、図２は本発明の表面弾性波装置の第２実施例に係る要部断面図、図３は本発明の表面弾性波装置の第２実施例に係る要部断面図である。   The drawings relating to the surface acoustic wave device of the present invention will be explained. FIG. 1 is a cross-sectional view of the principal part of the first embodiment of the surface acoustic wave device of the present invention, and FIG. FIG. 3 is a cross-sectional view of a main part according to a second embodiment of the surface acoustic wave device of the present invention.

次に、本発明の表面弾性波装置の第１実施例に係る構成を図１に基づいて説明すると、セラミック、ガラス、或いは圧電基板等からなる絶縁基板１は、上下方向に貫通する複数の孔１ａを有し、この絶縁基板１の下面には、孔１ａを囲むように、導電体からなる外部接続用の複数のランド部２が設けられている。   Next, the structure according to the first embodiment of the surface acoustic wave device of the present invention will be described with reference to FIG. 1. The insulating substrate 1 made of ceramic, glass, piezoelectric substrate or the like has a plurality of holes penetrating vertically. A plurality of lands 2 for external connection made of a conductor are provided on the lower surface of the insulating substrate 1 so as to surround the hole 1a.

また、絶縁基板１の上面には、酸化シリコン、或いは酸素を含有した低融点ガラスからなる接合膜３が均一な厚みで設けられ、この接合膜３は、絶縁基板１の孔１ａと一致する位置に孔３ａが設けられている。   A bonding film 3 made of silicon oxide or low-melting glass containing oxygen is provided on the upper surface of the insulating substrate 1 with a uniform thickness, and the bonding film 3 is located at a position that coincides with the hole 1a of the insulating substrate 1. Is provided with a hole 3a.

ＬｉＴａＯ３等からなる圧電基板４の下面には、櫛歯電極５と、この櫛歯電極５に接続された入出力用の接続パッド６と、櫛歯電極５と接続パッド６を覆った状態で、酸化シリコンからなる保護膜７が設けられている。
この保護膜７は、櫛歯電極５に対向する箇所が接続パッド６近傍に位置する箇所よりも薄く形成されていると共に、接続パッド６に位置する箇所には、接続パッド６を露出するための孔７ａが設けられている。 On the lower surface of the piezoelectric substrate 4 made of LiTaO 3 or the like, a comb electrode 5, an input / output connection pad 6 connected to the comb electrode 5, and the comb electrode 5 and the connection pad 6 are covered. A protective film 7 made of silicon oxide is provided.
The protective film 7 is formed so that the portion facing the comb electrode 5 is thinner than the portion located in the vicinity of the connection pad 6, and the connection pad 6 is exposed at the portion located in the connection pad 6. A hole 7a is provided.

そして、接合膜３の孔３ａと保護膜７の孔７ａを一致させ、接合膜３と保護膜７が合わされた状態で、陽極接合すると、接合膜３の孔３ａと保護膜７間が接合すると共に、絶縁基板１と接合膜３間、及び圧電基板４と保護膜７間が接合して、一体化された状態となる。   Then, when the hole 3a of the bonding film 3 and the hole 7a of the protective film 7 are matched and anodic bonding is performed in a state where the bonding film 3 and the protective film 7 are combined, the hole 3a of the bonding film 3 and the protective film 7 are bonded. At the same time, the insulating substrate 1 and the bonding film 3 and the piezoelectric substrate 4 and the protective film 7 are bonded and integrated.

陽極接合が完了すると、保護膜７と接合膜３間の櫛歯電極５に対向する箇所には、保護膜７の薄肉部によって、振動空間となる空間部８が形成されると共に、空間部８を取り巻く全外周部は、保護膜７と接合膜３の接合による密着部が形成されて、空間部８は密封状態となる。   When the anodic bonding is completed, a space 8 serving as a vibration space is formed by a thin portion of the protective film 7 at a position facing the comb electrode 5 between the protective film 7 and the bonding film 3, and the space 8 In the entire outer peripheral portion surrounding the space 8, a close contact portion is formed by bonding the protective film 7 and the bonding film 3, and the space portion 8 is in a sealed state.

また、空間部８から外れた位置では、絶縁基板１，接合膜３，及び保護膜７の孔１ａ、３ａ、７ａが一致した状態となって、接続パッド６が露出し、この状態で、メッキ等によって孔１ａ、３ａ、７ａの内壁に接続導体９を形成すると、接続パッド６は、接続導体９を介してランド部２に接続された状態となって、本発明の表面弾性波装置が形成されている。   Further, at a position away from the space portion 8, the holes 1a, 3a, 7a of the insulating substrate 1, the bonding film 3, and the protective film 7 are in alignment with each other, and the connection pad 6 is exposed. When the connection conductor 9 is formed on the inner walls of the holes 1a, 3a, and 7a by the above, the connection pad 6 is connected to the land portion 2 via the connection conductor 9, and the surface acoustic wave device of the present invention is formed. Has been.

このような本発明の表面弾性波装置は、絶縁基板１が電気機器のマザー基板１０上に載置され、ランド部２がマザー基板１０に設けられた配線パターン（図示せず）に半田付けされて、マザー基板１０に面実装されるようになっている。   In such a surface acoustic wave device of the present invention, the insulating substrate 1 is placed on the mother substrate 10 of the electric device, and the land portion 2 is soldered to a wiring pattern (not shown) provided on the mother substrate 10. Thus, it is surface-mounted on the mother board 10.

次に、本発明の表面弾性波装置の製造方法を説明すると、先ず、接合膜３を形成した絶縁基板１と、保護膜７を形成した圧電基板４を用意し、そして、接合膜３と保護膜７を合わした状態で陽極接合を行う。
即ち、この陽極接合は、絶縁基板１と圧電基板４との間に高電圧（数百Ｖ）をかけて、ガラス成分を軟化（ガラス転移）させることによって、接合膜３の孔３ａと保護膜７間、絶縁基板１と接合膜３間、及び圧電基板４と保護膜７間が接合する。 Next, the manufacturing method of the surface acoustic wave device of the present invention will be described. First, the insulating substrate 1 on which the bonding film 3 is formed and the piezoelectric substrate 4 on which the protective film 7 is formed are prepared, and the bonding film 3 and the protective film are protected. Anodic bonding is performed in a state where the films 7 are combined.
That is, in this anodic bonding, a high voltage (several hundreds V) is applied between the insulating substrate 1 and the piezoelectric substrate 4 to soften the glass component (glass transition), thereby forming the hole 3a of the bonding film 3 and the protective film. 7, the insulating substrate 1 and the bonding film 3, and the piezoelectric substrate 4 and the protective film 7 are bonded.

次に、陽極接合が完了した後、メッキを行って、孔１ａ、３ａ、７ａの内壁に接続導体９を形成すると、接続パッド６は、接続導体９を介してランド部２に接続された状態となって、本発明の表面弾性波装置が形成されている。
なお、この実施例では、メッキによって接続導体９を形成したが、孔１ａ、３ａ、７ａ内に導電ペーストを注入する等によって、接続導体９を形成しても良い。 Next, after anodic bonding is completed, plating is performed to form the connection conductor 9 on the inner walls of the holes 1a, 3a, 7a, and the connection pad 6 is connected to the land portion 2 via the connection conductor 9 Thus, the surface acoustic wave device of the present invention is formed.
In this embodiment, the connection conductor 9 is formed by plating. However, the connection conductor 9 may be formed by injecting a conductive paste into the holes 1a, 3a, and 7a.

また、図２は本発明の表面弾性波装置の第２実施例を示し、この第２実施例を説明すると、第１実施例の保護膜７の薄肉部に代えて、接合膜３に薄肉部を設け、これによって、接続膜３と保護膜７との間に空間部８を形成すると共に、接続パッド６とランド部２を通る位置において、絶縁基板１、接合膜３、保護膜７、及び圧電基板４を上下方向に貫通する貫通孔１１を設け、この貫通孔１１の内壁に設けられた接続導体９によって、ランド部２と接続パッド６間を接続したものである。   FIG. 2 shows a second embodiment of the surface acoustic wave device according to the present invention. The second embodiment will be described. The thin portion of the bonding film 3 is replaced with the thin portion of the protective film 7 of the first embodiment. Thus, the space 8 is formed between the connection film 3 and the protective film 7, and the insulating substrate 1, the bonding film 3, the protective film 7, A through hole 11 penetrating the piezoelectric substrate 4 in the vertical direction is provided, and the land 2 and the connection pad 6 are connected by a connection conductor 9 provided on the inner wall of the through hole 11.

その他の構成は、前記第１実施例と同様であるので同一部品に同一番号を付し、ここではその説明を省略する。
そして、貫通孔１１を設けることによって、接続導体９をメッキによって形成した際、メッキ液が通り易くなって、接続導体９の形成が確実にできる。
なお、この第２実施例において、保護膜７側にも薄肉部を設けて、接合膜３と保護膜７の薄肉部によって、空間部８を形成しても良い。 Since other configurations are the same as those of the first embodiment, the same parts are denoted by the same reference numerals, and the description thereof is omitted here.
And by providing the through-hole 11, when the connection conductor 9 is formed by plating, the plating solution can easily pass and the connection conductor 9 can be reliably formed.
In the second embodiment, a thin portion may be provided also on the protective film 7 side, and the space portion 8 may be formed by the thin portion of the bonding film 3 and the protective film 7.

また、図３は本発明の表面弾性波装置の第３実施例を示し、この第３実施例を説明すると、接続パッド６を露出するために接続パッド６とランド部２の間において、絶縁基板１、接合膜３、及び保護膜７に跨って設けられた縦孔１２ａと、縦孔１２ａに繋がるように、少なくとも保護膜７と接合膜３の側面側に設けられた横孔１２ｂを有し、縦孔１２ａと横孔１２ｂの内壁に設けられた接続導体９によって、ランド部２と接続パッド６を接続したものである。   FIG. 3 shows a third embodiment of the surface acoustic wave device according to the present invention. The third embodiment will be described. An insulating substrate is provided between the connection pad 6 and the land portion 2 in order to expose the connection pad 6. 1, a vertical hole 12a provided across the bonding film 3 and the protective film 7, and a horizontal hole 12b provided at least on the side of the protective film 7 and the bonding film 3 so as to be connected to the vertical hole 12a. The land portion 2 and the connection pad 6 are connected by the connection conductor 9 provided on the inner wall of the vertical hole 12a and the horizontal hole 12b.

その他の構成は、前記第１実施例と同様であるので同一部品に同一番号を付し、ここではその説明を省略する。
そして、縦孔１２ａと横孔１２ｂを設けることによって、接続導体９をメッキによって形成した際、メッキ液が通り易くなって、接続導体９の形成が確実にできる。 Since other configurations are the same as those of the first embodiment, the same parts are denoted by the same reference numerals, and the description thereof is omitted here.
By providing the vertical holes 12a and the horizontal holes 12b, when the connection conductor 9 is formed by plating, the plating solution can easily pass and the formation of the connection conductor 9 can be ensured.

本発明の表面弾性波装置の第１実施例に係る要部断面図。The principal part sectional drawing which concerns on 1st Example of the surface acoustic wave apparatus of this invention. 本発明の表面弾性波装置の第２実施例に係る要部断面図。Sectional drawing of the principal part which concerns on 2nd Example of the surface acoustic wave apparatus of this invention. 本発明の表面弾性波装置の第３実施例に係る要部断面図。Sectional drawing of the principal part which concerns on 3rd Example of the surface acoustic wave apparatus of this invention. 従来の表面弾性波装置の要部断面図。Sectional drawing of the principal part of the conventional surface acoustic wave apparatus.

符号の説明Explanation of symbols

１：絶縁基板
１ａ：孔
２：ランド部
３：接合膜
３ａ：孔
４：圧電基板
５：櫛歯電極
６：接続パッド
７：保護膜
７ａ：孔
８：空間部
９：接続導体
１０：マザー基板
１１：貫通孔
１２ａ：縦孔
１２ｂ：横孔
1: Insulating substrate 1a: Hole 2: Land portion 3: Bonding film 3a: Hole 4: Piezoelectric substrate 5: Comb electrode 6: Connection pad 7: Protection film 7a: Hole 8: Space portion 9: Connection conductor 10: Mother substrate 11: Through hole 12a: Vertical hole 12b: Horizontal hole

Claims (6)

圧電基板と、この圧電基板の下面に設けられた櫛歯電極、及びこの櫛歯電極に接続された接続パッドと、前記圧電基板の下方に対向して配置された絶縁基板と、この絶縁基板に設けられたランド部と、このランド部と前記接続パッド間を接続する接続導体とを備え、前記圧電基板の下面には、少なくとも前記櫛歯電極を覆う酸化シリコンからなる保護膜を有すると共に、前記絶縁基板の上面には、酸化シリコン、或いは酸素を含有した低融点ガラスからなる接合膜が設けられ、前記保護膜と前記接合膜間の前記櫛歯電極に対向する箇所には、空間部が設けられると共に、前記空間部を取り巻く全外周部は、前記保護膜と前記接合膜が陽極接合によって接合されて密着部が形成され、この密着部によって前記空間部が密封されたことを特徴とする表面弾性波装置。 A piezoelectric substrate, a comb electrode provided on the lower surface of the piezoelectric substrate, a connection pad connected to the comb electrode, an insulating substrate disposed below the piezoelectric substrate, and an insulating substrate A land portion provided and a connection conductor connecting the land portion and the connection pad, and a lower surface of the piezoelectric substrate has a protective film made of silicon oxide covering at least the comb-tooth electrode, and A bonding film made of silicon oxide or low-melting glass containing oxygen is provided on the upper surface of the insulating substrate, and a space portion is provided at a position facing the comb electrode between the protective film and the bonding film. The protective film and the bonding film are joined by anodic bonding to form a close contact portion, and the space portion is sealed by the close contact portion. Surface acoustic wave device. 前記保護膜は、前記櫛歯電極に対向する箇所を薄くして、前記空間部を形成したことを特徴とする請求項１記載の表面弾性波装置。 The surface acoustic wave device according to claim 1, wherein the protective film is formed by thinning a portion facing the comb electrode to form the space portion. 前記接合膜は、前記櫛歯電極に対向する箇所を薄くして、前記空間部を形成したことを特徴とする請求項１，又は２記載の表面弾性波装置。 3. The surface acoustic wave device according to claim 1, wherein the bonding film forms the space portion by thinning a portion facing the comb electrode. 4. 前記ランド部が前記絶縁基板の下面に設けられると共に、前記空間部から外れた位置で、前記ランド部と前記接続パッド間が前記接続導体によって接続され、前記接続パッドを露出するために前記接続パッドと前記ランド部の間において、前記絶縁基板、前記接合膜、及び前記保護膜に跨って孔が設けられ、前記孔の内壁に設けられた前記接続導体によって、前記ランド部と前記接続パッド間が接続されたことを特徴とする請求項１から３の何れかに記載の表面弾性波装置。 The land portion is provided on the lower surface of the insulating substrate, and the land portion and the connection pad are connected by the connection conductor at a position away from the space portion, and the connection pad is exposed to expose the connection pad. A hole is provided between the land portion and the insulating substrate, the bonding film, and the protective film, and the connection conductor provided on the inner wall of the hole causes a gap between the land portion and the connection pad. 4. The surface acoustic wave device according to claim 1, wherein the surface acoustic wave device is connected. 前記ランド部が前記絶縁基板の下面に設けられると共に、前記空間部から外れた位置で、前記ランド部と前記接続パッド間が前記接続導体によって接続され、前記接続パッドと前記ランド部を通る位置において、前記絶縁基板、前記接合膜、前記保護膜、及び前記圧電基板を上下方向に貫通する貫通孔を有し、前記貫通孔の内壁に設けられた前記接続導体によって、前記ランド部と前記接続パッド間が接続されたことを特徴とする請求項１から３の何れかに記載の表面弾性波装置。 In the position where the land portion is provided on the lower surface of the insulating substrate, the land portion and the connection pad are connected by the connection conductor at a position away from the space portion, and pass through the connection pad and the land portion. And the insulating substrate, the bonding film, the protective film, and the piezoelectric substrate having a through-hole penetrating in the vertical direction, and the land portion and the connection pad by the connection conductor provided on the inner wall of the through-hole The surface acoustic wave device according to any one of claims 1 to 3, wherein the gaps are connected. 前記ランド部が前記絶縁基板の下面に設けられると共に、前記空間部から外れた位置で、前記ランド部と前記接続パッド間が前記接続導体によって接続され、前記接続パッドを露出するために前記接続パッドと前記ランド部の間において、前記絶縁基板、前記接合膜、及び前記保護膜に跨って設けられた縦孔と、前記縦孔に繋がるように、少なくとも前記保護膜と前記接合膜の側面側に設けられた横孔を有し、前記縦孔と前記横孔の内壁に設けられた前記接続導体によって、前記ランド部と前記接続パッド間が接続されたことを特徴とする請求項１から３の何れかに記載の表面弾性波装置。
The land portion is provided on the lower surface of the insulating substrate, and the land portion and the connection pad are connected by the connection conductor at a position away from the space portion, and the connection pad is exposed to expose the connection pad. And at least the side surfaces of the protective film and the bonding film so as to be connected to the vertical holes and the vertical holes provided between the insulating substrate, the bonding film, and the protective film. The land portion and the connection pad are connected to each other by the connection conductor provided on the inner wall of the vertical hole and the horizontal hole. The surface acoustic wave device according to any one of the above.
JP2004368189A 2004-12-20 2004-12-20 Surface acoustic wave device Withdrawn JP2006179972A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110227661A1 (en) * 2010-03-19 2011-09-22 Masashi Numata Glass substrate bonding method, glass assembly, package manufacturing method, package, piezoelectric vibrator, oscillator, electronic device, and radio-controlled timepiece
JP2013141330A (en) * 2006-08-07 2013-07-18 Kyocera Corp Elastic wave device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013141330A (en) * 2006-08-07 2013-07-18 Kyocera Corp Elastic wave device
JP5258566B2 (en) * 2006-08-07 2013-08-07 京セラ株式会社 Manufacturing method of surface acoustic wave device
US9021669B2 (en) 2006-08-07 2015-05-05 Kyocera Corporation Method for manufacturing surface acoustic wave apparatus
US9882540B2 (en) 2006-08-07 2018-01-30 Kyocera Corporation Method for manufacturing surface acoustic wave apparatus
US20110227661A1 (en) * 2010-03-19 2011-09-22 Masashi Numata Glass substrate bonding method, glass assembly, package manufacturing method, package, piezoelectric vibrator, oscillator, electronic device, and radio-controlled timepiece

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