JP2006173495A - Device for heating semiconductor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device for heating semiconductors which can cool a semiconductor wafer efficiently in a short time in a heating and a cooling process in a semiconductor manufacturing process. <P>SOLUTION: The device for heating the semiconductors comprises a holding portion for holding the semiconductor wafer, a heating plate for heating the semiconductor wafer, and a cooling plate for cooling the heated semiconductor wafer. The heating plate is so arranged as to face at least one face of the semiconductor wafer while the cooling plate can be arranged between the semiconductor wafer and the heating plate. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

The present invention relates to a semiconductor heating device used when manufacturing a semiconductor wafer.

In the semiconductor manufacturing process, the heat treatment and the cooling treatment are repeatedly performed, so that the resist application to the semiconductor wafer and the processing such as exposure and development are appropriately performed. As a result, the semiconductor can be manufactured.
And in each process, heating and cooling performed as needed are requested | required to perform efficiently and rapidly. In order to meet this demand, a semiconductor manufacturing apparatus is provided with a heating mechanism and a cooling mechanism (see, for example, Patent Documents 1 to 4).

Patent Document 1 discloses a heat treatment method in which a stacked body of a heating device and a cooling device is arranged with a gap on at least one of the front and back sides of a semiconductor wafer to heat and cool the semiconductor wafer.
Patent Document 2 includes a holding unit that holds a semiconductor wafer horizontally and can move up and down, a heat equalizing member and a planar heating member provided on the upper and lower surfaces of the holding unit, and the semiconductor wafer is reproducible at a uniform temperature. Well, a heat treatment apparatus that can be quickly heated is disclosed.

Patent Document 3 discloses a heat treatment apparatus that heats and cools a semiconductor wafer by disposing heat sources on both upper and lower surfaces of the semiconductor wafer and opposing these heat sources at a predetermined interval.
Patent Document 4 discloses a heat treatment apparatus that includes a heat plate and a cooling plate, and heats and cools the semiconductor wafer by moving them up and down.

JP-A-3-69111 JP 7-37827 A JP-A-11-97448 Japanese Patent Laid-Open No. 11-233407

By using the heat treatment apparatus and the heating method as described above, it is possible to perform heat treatment and cooling treatment of the semiconductor wafer in the semiconductor manufacturing process.
However, in the conventional heat treatment apparatus, when the semiconductor wafer is cooled, it is difficult to cool the semiconductor wafer in a short time.
This is because when the semiconductor wafer is cooled only by cooling, it takes time to cool, and even when the semiconductor wafer is cooled using a cooling plate or the like, the cooling plate and the semiconductor wafer A heat source such as a heating plate is inserted between them, and it is necessary to cool the heating plate together with the semiconductor wafer, and it is inevitable that the cooling time will be longer than when cooling only the semiconductor wafer. It was. Therefore, the conventional heat treatment apparatus and heating method have room for improvement in reducing the time required for semiconductor manufacturing and improving the production efficiency of the semiconductor.

The present inventors have intensively studied to solve the above problems and completed the present invention.
The semiconductor heating device of the present invention is a semiconductor heating device comprising a holding unit for holding a semiconductor wafer, a heating plate for heating the semiconductor wafer, and a cooling plate for cooling the heated semiconductor wafer,
The heating plate is arranged to face at least one surface of the semiconductor wafer,
The cooling plate is configured to be inserted between the semiconductor wafer and the heating plate.

In the semiconductor heating device, it is desirable that the cooling plate contains at least one metal selected from Cu, Al, Cr, and Ni.
The cooling plate preferably has a value based on JIS Z 8721 of N5 or less.
The cooling plate is preferably movable in a direction substantially parallel to the main surface of the semiconductor wafer.
Moreover, it is desirable that the cooling plate has a slit formed at the end thereof.
Further, the cooling plate is preferably formed by connecting a plurality of plates.

In addition, the semiconductor heating device of the present invention preferably includes a storage portion for storing the cooling plate.
When the storage portion is provided as described above, it is desirable that the cooling plate is in a roll state in the storage portion.

In the semiconductor heating apparatus of the present invention, since the cooling plate is configured to be interposed between the semiconductor wafer and the heating plate, the semiconductor wafer can be efficiently and quickly performed in the heating and cooling processes of the semiconductor manufacturing process. Can be cooled.
Moreover, when the said semiconductor heating apparatus is provided with the accommodating part, size reduction of an apparatus itself can be achieved, providing a cooling plate.

The semiconductor heating device of the present invention is characterized in that the cooling efficiency of the semiconductor wafer is improved.
The following two reasons can be considered as reasons why the cooling efficiency could be improved.
That is, the first reason is that the distance between the semiconductor wafer and the cooling plate that is a cooling source can be reduced. In a conventional heat treatment apparatus, when a cooling source such as a cooling plate is provided, this cooling source is disposed so as to face the semiconductor wafer via a heating source such as a heating plate. Even if it is attempted to reduce the distance between the cooling source and the cooling source, it is difficult to sufficiently reduce the cooling time of the semiconductor wafer due to the configuration in which the heating source is present, and it is necessary to increase the distance to some extent. On the other hand, in the semiconductor heating device of the present invention, the cooling plate can be interposed between the semiconductor wafer and the heating plate (the semiconductor wafer and the cooling plate can be directly opposed to each other). The distance to the cooling plate can be shortened, and the semiconductor wafer cooling time can be shortened.

Another reason is that the cooling plate and the semiconductor wafer can be directly opposed to each other. As described above, in the conventional heat treatment apparatus, the cooling source is disposed so as to face the semiconductor wafer via the heating source. Therefore, when cooling, the heating source must be cooled together with the semiconductor wafer. Whereas the time required for cooling is increased by the amount of time required for cooling the source, the semiconductor heating apparatus of the present invention does not need to cool the heating plate, and cools the semiconductor wafer in a short time. Can do it.

The semiconductor heating device of the present invention is a semiconductor heating device comprising a holding unit for holding a semiconductor wafer, a heating plate for heating the semiconductor wafer, and a cooling plate for cooling the heated semiconductor wafer,
The heating plate is arranged to face at least one surface of the semiconductor wafer,
The cooling plate is configured to be interposed between the semiconductor wafer and the heating plate.

The semiconductor heating device of the present invention will be described below with reference to the drawings.
FIGS. 1-1 and 2 are cross-sectional views schematically showing an embodiment of a semiconductor heating device of the present invention. FIG. 1-1 shows a state during heating, and FIG. 1-2 shows a state during cooling. Shows the state.
1-1A is a longitudinal sectional view of the semiconductor heating device, and FIG. 1-1B is a transverse sectional view taken along the line AA. Moreover, (a) of FIGS. 1-2 is a longitudinal cross-sectional view of the heating apparatus for semiconductors, (b) is a cross-sectional view in the BB line.
FIGS. 1-1 and 2 show the semiconductor heating apparatus in a state where the semiconductor wafer is placed on the holding portion.

As shown in FIG. 1A, the semiconductor heating apparatus 100 includes a processing chamber 101 including an upper chamber 102 and a lower chamber 103, two heating plates 110 and 130 disposed in the processing chamber 101, and cooling. The two heating plates 110 and 130 are arranged horizontally in the lower chamber 103 and the upper chamber 102, one by one.
The upper chamber 102 includes a wafer entrance / exit 141 for loading and unloading the semiconductor wafer 119 on the side surface.
The lower chamber 103 includes a heat exchanger 140, and the heat exchanger 140 includes an air ejection mechanism (not shown).

The heating plate 130 disposed in the upper chamber 102 is fixed at a position where a predetermined distance from the semiconductor wafer 119 can be maintained. In addition, on the upper portion of the heating plate 130, a wiring storage portion 131 that stores wiring for applying a voltage to the heating plate 130 and the like is provided.
In addition, the heating plate 110 disposed in the lower chamber 103 is fixed to the movable plate 121 via four support pins 122 attached to four locations in the vicinity of the outer periphery. It is attached to the cylinder 123. Here, a groove is cut in the side surface of the air cylinder 123, and a convex portion integrated with a movable piece movable by the pressure of air protrudes outside the cylinder through the groove. Is fixed to the movable plate 121. The heating plate 110 can be lowered or raised integrally with the movable plate 121 by sending air into the cylinder from the top or bottom of the air cylinder.
Further, in the lower chamber 103, a cylinder 125 is separately provided in the vicinity of the cylinder 123. In this cylinder 125, three lifter pins 116 for supporting and delivering the semiconductor wafer 119 are provided. It is fixed through. Here, the air cylinder 125 to which the movable plate 124 is fixed has the same configuration as that of the air cylinder 123 for moving the heating plate 110 up and down, and the movable plate 124 is formed on the convex portion protruding from the side surface of the air cylinder. Is fixed. Therefore, the lifter pin 116 can be lowered or raised integrally with the movable plate 124.
The lifter pins 116 function as a holding unit that holds the semiconductor wafer.
In addition, although the wiring etc. for driving the heating plate 110 are also attached, it is not specifically illustrated here.

In the heating plate 110, a plurality of concentric heating elements 112 are formed on a surface 110b opposite to the side facing the semiconductor wafer. These heating elements 112 are formed so that two concentric circles close to each other form a set of circuits to form one line, and these circuits are combined so that the temperature at the heating surface 110a is uniform. In addition, connection portions 113 with external terminals (not shown) serving as input / output terminals are formed at both ends of the circuit composed of the heating element 112.
In addition, a through hole for inserting the lifter pin 116 is formed in a portion near the center of the heating plate 110, and a bottomed hole 118 is separately formed. Although not shown, a temperature measuring element is attached to the bottomed hole 118.

The heating plate 130 has the same configuration as the heating plate 110 except that a through hole for inserting the lifter pin is not formed, and the heating surface (on the side opposite to the surface on which the heating element is formed). Surface) is fixed so as to face the semiconductor wafer.

Further, the lower chamber 103 is provided with a storage unit 150 with a partition wall 155 on the side surface, and the storage unit 150 can store the cooling plate 151 in a roll state. A rail 154 for sending out to the lower part of the semiconductor wafer 119 is laid in a roll shape. The rail 154 extends to the upper part of the lower heating plate.
In addition, an air cylinder 156 for storing and sending out the cooling plate 151 is disposed below the rail 154. The air cylinder 156 has a groove formed on the upper surface thereof, and a convex portion integrated with a movable piece that is movable by the pressure of air protrudes from the upper surface of the cylinder through the groove. And this convex part is being fixed to the front-end | tip part of a cooling plate, and the metal piece which comprises the cooling plate 151 is sent out sequentially from the said accommodating part by the reciprocating motion of a movable piece (convex part), or it accommodates in a accommodating part sequentially. You can do it.

The cooling plate 151 is composed of a plurality (twelve in FIG. 1) of metal plates 152 and connected by connecting members 153 attached to the side surfaces of the respective metal plates 152. The cooling plate 151 is provided with slits 151 a so as not to come into contact with the support pins 116 in a state where the cooling plate 151 is fed to the lower part of the semiconductor wafer 119.
Further, although not shown, the cooling plate 151 is provided with piping for circulating a refrigerant (water or gas). This piping will be described later with reference to the drawings.
The cooling plate 151 is preferably designed to be located as close to the semiconductor wafer 119 as possible from the viewpoint of improving cooling efficiency. When the cooling plate 151 is designed to be located near the semiconductor wafer 119, In order to avoid contact with the wafer 119, a spacer may be formed on the upper surface (the surface facing the semiconductor wafer) of the cooling plate 151.

Further, the partition wall 155 is provided with a cooling plate inlet / outlet 155a for taking in / out the cooling plate 151 from / into the storage unit 150. The cooling plate inlet / outlet 155a includes a shutter mechanism (not shown). The cooling plate inlet / outlet 155a is closed when the 151 is housed, and is opened when the cooling plate 151 is pulled out.

The semiconductor heating device 100 includes an air cylinder for moving the heating plate 110 (movable plate 121) and the lifter pin (movable plate 124) up and down, and sending out the cooling plate 151. The cylinder is desirable because it is inexpensive and easy to control. A hydraulic cylinder or the like can be used instead of the air cylinder, and a step motor may be used instead of the cylinder.

In FIG. 1, a cooling plate made of a plurality of metal pieces, that is, a cooling plate formed by connecting a plurality of plates is used. When such a cooling plate formed by connecting a plurality of plates is used, heat radiation is performed not only on the upper and lower surfaces of the cooling plate but also on the side surfaces of each plate (the surface area contributing to heat radiation increases). Cooling efficiency will be improved.
In the semiconductor heating device of the present invention, a cooling plate composed of a single plate may be used. However, for the reasons described above, it is desirable to use a cooling plate formed by connecting a plurality of plates.

Next, the operation of the semiconductor heating device of the present invention will be described.
In the semiconductor heating apparatus 100, the semiconductor wafer 119 is carried in from the wafer entrance / exit 141 and supported by the lifter pins 116, and then the heating plate 110 is raised together with the movable plate 121 and the support pins 122, so that the heating plate 110 and the semiconductor wafer 119 are predetermined. (See FIGS. 1-1 (a) and (b)). The semiconductor wafer can be loaded by a conventionally known method such as loading with a robot arm.
Then, by energizing the heating elements formed on the heating plates 110 and 130, the heating plates 110 and 130 are heated, and the semiconductor wafer 119 is heated.
Further, during the heat treatment, air is ejected from an air ejection mechanism provided in the heat exchanger 140 and air is sucked from the wafer entrance / exit side to prevent particles from adhering to the semiconductor wafer 119. .

In addition, when the heat treatment is finished and the process proceeds to the cooling treatment, the heating plate 110 is lowered, and then the cooling plate 151 is taken out of the storage unit 150 and positioned below the semiconductor wafer 119. In other words, the cooling plate 151 is interposed between the semiconductor wafer 119 and the heating plate 110. Thereafter, the semiconductor wafer is lowered together with the lifter pins 116, and the semiconductor wafer is brought close to the cooling plate (see FIGS. 1-2 (a) and (b)).
Further, the semiconductor wafer 119 is cooled by flowing a coolant (water or gas) through a pipe disposed in the cooling plate 151.
In this manner, the semiconductor wafer is heated and cooled, and after the processing is completed, the semiconductor wafer is unloaded, and then a new unprocessed semiconductor wafer is loaded.
Thereby, a semiconductor wafer can be heated and cooled sequentially.

Next, components of the semiconductor heating device of the present invention will be described.
First, the cooling plate will be described.
As the material of the cooling plate, for example, a material containing at least one metal selected from Cu, Al, Cr, Ni, for example, Cu, Al, Cr, Ni and alloys thereof (Cu alloy, Al Alloy, Cr alloy, Ni alloy) and the like. This is because the rigidity as a cooling plate can be secured, the heat capacity is large, and the plate can be cooled in a short time by water cooling or air cooling, so that it is suitable for efficiently cooling the semiconductor wafer.
In addition, when these metals are used, the semiconductor wafer can be cooled uniformly, so that inconveniences such as breakage of the semiconductor wafer during cooling can be avoided.
Moreover, as an example of the said alloy, rolled copper foil, stainless steel (SUS) etc. are mentioned, for example.

Further, the cooling plate may be a single layer plate made of the above material, or may be a plate made up of two or more layers. Moreover, the laminated body of the plate which consists of said material, and the plate which consists of another metal may be sufficient.
When the cooling plate is formed by connecting a plurality of metal pieces by a connecting member as shown in FIGS. 1-1 and 2, the connecting member is also preferably made of the metal.

Further, it is desirable that the cooling plate has a lightness value of N5 or less in accordance with JIS Z 8721. This is because in this case, the amount of radiant heat and concealment are excellent, the cooling property is promoted, and the semiconductor wafer can be cooled more efficiently. The entire cooling plate may have the lightness in the above range, or a part of the cooling plate (for example, a portion facing the semiconductor wafer) may have the lightness in the above range.
Here, the brightness N is an ideal black brightness of 0, an ideal white brightness of 10, and the perception of the brightness of the color between these black brightness and white brightness. Each color is divided into 10 so as to have a uniform rate, and is displayed with symbols N0 to N10.
Actual measurement is performed by comparing with color charts corresponding to N0 to N10. In this case, the first decimal place is 0 or 5.

The cooling plate is preferably configured to be movable in a direction substantially parallel to the main surface of the semiconductor wafer, as shown in FIGS.
In this case, since the cooling plate can be inserted between the semiconductor wafer and the heating plate only during the cooling process, the heat generated from the heating plate is not hindered during the heating, and the semiconductor wafer can be removed in a short time. This is because the semiconductor wafer can be cooled in a short time as described above.

Moreover, as shown to FIGS. 1-2, the said cooling plate may have the slit formed in the front-end | tip. By forming the slit, the cooling plate does not come into contact with the lifter pin or the like, and there is no possibility that the cooling function is deteriorated due to contact with other components. That is, at the end of the heating process, the lifter pins and the like also have heat, and when the cooling plate comes into contact with the lifter pins, the cooling plate itself is heated, and as a result, the cooling capacity of the cooling plate is reduced. Such an inconvenience can be avoided by forming.

In addition, the cooling plate is not limited to one that can have a roll shape in the storage section as shown in FIGS. 1-1 and 2, and may be a plate-like body that does not easily deform. .
However, in view of being advantageous in reducing the size of the semiconductor heating device, it is desirable that it can be stored in a roll shape.
In the semiconductor heating apparatus shown in FIGS. 1-1 and 2, cooling plates are housed on both side surfaces of the apparatus, and the semiconductor wafer is cooled by two cooling plates. The cooling plate may be stored only on one side surface of the semiconductor wafer, and the semiconductor wafer may be cooled by one cooling plate.

In other words, it is desirable that the semiconductor heating device has a storage portion for storing the cooling plate. This is because if the cooling plate is stored in the storage portion during heating, heating of the semiconductor wafer by the heating plate is not hindered, leading to improvement in heating efficiency.

Further, as described above, the cooling plate may be provided with a pipe (hereinafter also referred to as a refrigerant pipe) for flowing a refrigerant such as water or gas.
Hereinafter, the refrigerant pipe disposed on the cooling plate will be described with reference to the drawings.
FIGS. 2 and 3 are respectively a side view and a plan view schematically showing a part of a cooling plate on which a refrigerant pipe is formed.

As shown in FIG. 2, the metal piece 152 constituting the cooling plate 151 has three parallel refrigerant tubes 155 formed therein. And a semiconductor wafer can be efficiently cooled by flowing a refrigerant in this refrigerant pipe. In the figure, reference numeral 153 denotes a connecting member.
Moreover, when arrange | positioning a refrigerant | coolant pipe | tube parallel to the inside of a metal piece, the number is not specifically limited, One or two may be sufficient and four or more may be sufficient.

Moreover, when arrange | positioning a refrigerant | coolant pipe | tube to a metal piece, as shown in FIG. 3, the one refrigerant | coolant pipe | tube 255 which meanders the inside of the metal piece 252 which comprises a cooling plate may be sufficient. In this case as well, the semiconductor wafer can be efficiently cooled by flowing the refrigerant into the refrigerant pipe.
In the figure, reference numeral 253 denotes a connecting member.

Moreover, although the refrigerant | coolant pipe | tube shown in FIG.2, 3 is formed for every metal piece, when connecting a refrigerant | coolant pipe | tube to a cooling plate, for example, the whole metal piece which comprises a cooling plate is integrated. You may arrange | position the refrigerant | coolant pipe | tube which penetrates.
Moreover, when forming a refrigerant | coolant pipe | tube for every metal piece, a refrigerant | coolant pipe | tube may be formed in all the metal pieces, and a refrigerant pipe may be formed only in a part of metal pieces.

Next, the heating plate will be described.
As the heating plate, the same plate can be used for both the upper surface side and the lower surface side of the semiconductor wafer. Therefore, here, the heating plate will be described without distinguishing both.
As the heating plate, a ceramic heater in which a heating element is formed on or inside the ceramic substrate can be used.

Examples of the material of the ceramic substrate include nitride ceramics, carbide ceramics, and oxide ceramics. Of these, non-oxide ceramics of nitride ceramic and carbide ceramic are desirable.
Nitride ceramics, carbide ceramics and oxide ceramics have a smaller coefficient of thermal expansion than metals and have a significantly higher mechanical strength than metals. No distortion. Therefore, the ceramic substrate can be made thin and light. Furthermore, since the ceramic substrate has a high thermal conductivity and the ceramic substrate itself is thin, the surface temperature of the ceramic substrate quickly follows the temperature change of the heating element. That is, the surface temperature of the ceramic substrate can be controlled by changing the voltage and current values to change the temperature of the heating element.

Examples of the nitride ceramic include aluminum nitride, silicon nitride, boron nitride, and titanium nitride. These may be used alone or in combination of two or more.

Examples of the carbide ceramic include silicon carbide, zirconium carbide, titanium carbide, tantalum carbide, and tungsten carbide. These may be used alone or in combination of two or more.

Furthermore, examples of the oxide ceramic include metal oxide ceramics such as alumina, zirconia, cordierite, and mullite.
These ceramics may be used independently and may use 2 or more types together.

Among these, non-oxide ceramics of nitride ceramic and carbide ceramic are desirable, and aluminum nitride is most desirable. This is because the thermal conductivity is the highest, 180 W / m · K, and the temperature followability is excellent.

In the ceramic heater, when a nitride ceramic, a carbide ceramic, an oxide ceramic or the like is used as the ceramic substrate, an insulating layer may be formed as necessary. Nitride ceramics are liable to decrease in volume resistance at high temperatures due to oxygen solid solution, etc., and carbide ceramics have conductivity unless particularly highly purified. This is because a short circuit between the circuits can be prevented and temperature controllability can be ensured even if the content is contained.

As the insulating layer, an oxide ceramic is desirable. Specifically, silica, alumina, mullite, cordierite, beryllia, or the like can be used.
Such an insulating layer can be formed by spin-coating a sol solution obtained by hydrolytic polymerization of an alkoxide on a ceramic substrate, drying and firing, or performing a treatment such as sputtering or CVD. In addition, an oxide layer may be provided by oxidizing the surface of the ceramic substrate.

The thickness of the insulating layer is preferably 0.1 to 1000 μm. This is because if the thickness is less than 0.1 μm, insulation cannot be secured, and if it exceeds 1000 μm, the thermal conductivity from the heating element to the ceramic substrate is hindered.
Furthermore, the volume resistivity of the insulating layer is desirably 10 times or more (the same measurement temperature) as the volume resistivity of the ceramic substrate. This is because if it is less than 10 times, a short circuit cannot be prevented.

Moreover, it is desirable that the ceramic substrate contains carbon and the content thereof is 200 to 5000 ppm. This is because the electrode can be concealed and blackbody radiation can be easily used.

In addition, as the ceramic substrate, a substrate in which an insulating layer made of an oxide ceramic is formed on the surface of a silicon wafer can be used.

The ceramic substrate preferably has a lightness of N6 or less in accordance with JIS Z 8721. This is because the lightness of this level is excellent in the amount of radiant heat and concealment.

In the ceramic heater, when the heating element is provided on the surface of the ceramic substrate, it is desirable that the heating element forming surface is opposite to the heating surface. By setting the formation position of the heating element in this way, while the heat generated from the heating element propagates, it diffuses throughout the ceramic substrate and the temperature distribution on the surface that heats the semiconductor wafer is made uniform. As a result, the temperature in each part of the object to be heated is made uniform.
The heating element may be formed inside a ceramic substrate (see FIG. 5D).

When the heating element is formed on the surface of the ceramic substrate, the thickness of the heating element is preferably 1 to 30 μm. Furthermore, the width of the heating element is preferably 0.1 to 20 mm, and more preferably 0.1 to 5 mm.
The heating element can have a change in resistance value depending on its width and thickness, but the above range is the most practical. The resistance value increases as it becomes thinner and thinner.

In addition, as the heating element pattern in the ceramic heater, for example, a spiral pattern, an eccentric circular pattern, a repeated pattern of bent lines, or the like can be used. These may be used in combination.
In addition, by making the heating element pattern formed on the outermost periphery into a pattern divided in the circumferential direction, it becomes possible to perform fine temperature control on the outermost periphery of the ceramic heater where the temperature tends to decrease. It is possible to suppress variations in temperature. Furthermore, the pattern of the heating element divided in the circumferential direction is not limited to the outermost periphery of the ceramic substrate, and may be formed inside the outer periphery.

The heating element may be rectangular or elliptical in cross section, but is preferably flat. This is because the flat surface is more likely to dissipate heat toward the heating surface, and thus the temperature distribution on the heating surface is less likely to occur. The cross-sectional aspect ratio (the width of the heating element / the thickness of the heating element) is preferably 10 to 5000.
By adjusting to this range, the resistance value of the heating element can be increased and the uniformity of the temperature of the heating surface can be ensured.

When the thickness of the heating element is constant, if the aspect ratio is smaller than the above range, the amount of heat propagation in the direction of the heating surface of the ceramic substrate will be reduced, and a heat distribution that approximates the pattern of the heating element will be generated on the heating surface. On the contrary, if the aspect ratio is too large, the portion directly above the center of the heating element becomes high in temperature, and eventually a heat distribution that approximates the pattern of the heating element is generated on the heating surface. Therefore, considering the temperature distribution, the aspect ratio of the cross section is desirably 10 to 5000.
In the ceramic heater, the aspect ratio is more preferably 10 to 200.

The conductor paste used for forming the heating element is not particularly limited, but contains metal particles or conductive ceramics to ensure conductivity, and includes resin, solvent, thickener, etc. Is preferred.

As the metal particles, for example, noble metals (gold, silver, platinum, palladium), lead, tungsten, molybdenum, nickel and the like are preferable, and among them, noble metals (gold, silver, platinum, palladium) are more preferable. Moreover, although these may be used independently, it is desirable to use 2 or more types together. This is because these metals are relatively difficult to oxidize and have sufficient resistance to generate heat.
Examples of the conductive ceramic include tungsten and molybdenum carbides. These may be used alone or in combination of two or more.

The particle diameter of these metal particles or conductive ceramic particles is preferably 0.1 to 100 μm. If it is too fine, less than 0.1 μm, it is easy to oxidize.

The metal particles may be spherical or flake shaped. When these metal particles are used, it may be a mixture of the sphere and the flakes.
When the metal particles are flakes or a mixture of spheres and flakes, it becomes easier to hold metal oxides between the metal particles, and the adhesion between the heating element and the nitride ceramic is improved. This is advantageous because it can be ensured and the resistance value can be increased.

Examples of the resin used for the conductor paste include an epoxy resin and a phenol resin. Examples of the solvent include isopropyl alcohol. Examples of the thickener include cellulose.

As described above, it is desirable that the conductive paste is obtained by adding a metal oxide to metal particles and sintering the metal particles and metal oxide as a heating element. Thus, by sintering the metal oxide together with the metal particles, the nitride ceramic or carbide ceramic as the ceramic substrate and the metal particles can be brought into close contact with each other.

The reason why the adhesion with the nitride ceramic or carbide ceramic is improved by mixing the metal oxide is not clear, but the surface of the metal particles, the surface of the nitride ceramic, or the carbide ceramic is slightly oxidized to form an oxide film. It is considered that the oxide films are sintered and integrated with each other through the metal oxide, and the metal particles and the nitride ceramic or the carbide ceramic are in close contact with each other.

As the metal oxide, for example, at least one selected from the group consisting of lead oxide, zinc oxide, silica, boron oxide (B ₂ O ₃ ), alumina, yttria, and titania is preferable.

This is because these oxides can improve the adhesion between the metal particles and the nitride ceramic or carbide ceramic without increasing the resistance value of the heating element.

The ratio of lead oxide, zinc oxide, silica, boron oxide (B ₂ O ₃ ), alumina, yttria, and titania is 1 to 10 in terms of weight ratio when the total amount of metal oxide is 100 parts by weight. Silica 1-30, Boron oxide 5-50, Zinc oxide 20-70, Alumina 1-10, Yttria 1-50, Titania 1-50, the total exceeds 100 parts by weight It is desirable to adjust within a range that does not.
By adjusting the amount of these oxides within these ranges, it is possible to improve the adhesion particularly with the nitride ceramic.
The amount of the metal oxide added to the metal particles is preferably 0.1 wt% or more and less than 10 wt%.

Moreover, metal foil and a metal wire can also be used as a heat generating body. As the metal foil, it is desirable to use a nickel foil or a stainless steel foil as a heating element by patterning by etching or the like. The patterned metal foil may be bonded with a resin film or the like. Examples of the metal wire include a tungsten wire and a molybdenum wire.

The sheet resistivity when the heating element is formed is preferably 0.1 mΩ to 10Ω / □. When the area resistivity is less than 0.1 mΩ / □, the width of the heating element pattern must be very thin, about 0.1 to 1 mm, in order to secure the heat generation amount. If the wire breaks due to chipping, the resistance value fluctuates, and the area resistivity exceeds 10Ω / □, the heat generation amount cannot be secured unless the width of the heating element pattern is increased. This is because the degree of freedom decreases and it becomes difficult to make the temperature of the heating surface uniform.

When a heating element is formed on the surface of the ceramic substrate, it is desirable that a metal coating layer is provided on the surface portion of the heating element. This is to prevent the resistance value from changing due to oxidation of the internal metal sintered body. As for the thickness of the metal coating layer to form, 0.1-10 micrometers is preferable.

Although the metal used when forming a metal coating layer will not be specifically limited if it is a non-oxidizing metal, Specifically, gold | metal | money, silver, palladium, platinum, nickel etc. are mentioned, for example. These may be used alone or in combination of two or more. Of these, nickel is preferred.

The ceramic substrate preferably has a diameter of 200 mm or more. This is because a ceramic heater having a larger diameter has a larger heat capacity. In addition, such a ceramic substrate having a large diameter can heat a large-diameter semiconductor wafer. In particular, the diameter of the ceramic substrate is desirably 12 inches (300 mm) or more. This is because it becomes the mainstream of next-generation semiconductor wafers.

The upper limit of the thickness of the ceramic substrate is desirably 20 mm. This is because if the thickness of the ceramic substrate exceeds 20 mm, the temperature followability is lowered. Moreover, it is desirable that the thickness of the through hole is 0.5 mm. When the thickness is less than 0.5 mm, the strength of the ceramic substrate itself is lowered, so that it is easily damaged. More desirably, the lower limit is a thickness exceeding 1.5 mm, and the upper limit is 5 mm. If it is thicker than 5 mm, heat will not easily propagate, and the heating efficiency will tend to decrease. On the other hand, if it is 1.5 mm or less, the heat propagated in the ceramic substrate will not diffuse sufficiently, resulting in temperature variations on the heating surface. This is because the strength of the ceramic substrate may be reduced and broken.

In the ceramic heater, it is desirable that the ceramic substrate is provided with a bottomed hole from the bottom surface toward the heating surface (surface facing the semiconductor wafer), and a temperature measuring element such as a thermocouple is provided in the bottomed hole. This is because the temperature of the ceramic heater (heating plate) can be controlled.

The bottom of the bottomed hole is preferably formed closer to the heating surface than the heating element.
Specifically, the distance between the heating surface and the bottom of the bottomed hole is preferably 0.1 mm to ½ of the thickness of the ceramic substrate. If the thickness is less than 0.1 mm, heat is dissipated and a temperature distribution is formed on the heating surface. If the thickness exceeds 1/2 of the thickness of the ceramic substrate, the temperature of the heating element is easily affected, and the temperature cannot be controlled. This is because a temperature distribution is formed on the heating surface.

The diameter of the bottomed hole is desirably 0.3 mm to 5 mm. This is because if it is too large, the heat dissipation becomes large, and if it is too small, the workability deteriorates and the distance from the heating surface cannot be made uniform.

Examples of the temperature measuring element include a thermocouple, a platinum resistance temperature detector, a thermistor, and the like. Examples of the thermocouple include K-type, R-type, B-type, S-type, E-type, J-type, and T-type thermocouples as exemplified in JIS-C-1602 (1980). Of these, a K-type thermocouple is preferable.

The size of the junction of the thermocouple is preferably the same as or larger than the diameter of the strand and 0.5 mm or less. This is because if the joint is large, the heat capacity increases and the responsiveness decreases. It is difficult to make the diameter smaller than the diameter of the strand.

The temperature measuring element may be bonded to the bottom of the bottomed hole using gold solder, silver solder, etc., or inserted into the bottomed hole and then sealed with a heat resistant resin. May be.
Examples of the heat resistant resin include thermosetting resins, particularly epoxy resins, polyimide resins, bismaleimide-triazine resins, and the like. These resins may be used alone or in combination of two or more.

The gold braze is selected from 37 to 80.5 wt% Au-63 to 19.5 wt% Cu alloy, 81.5 to 82.5 wt%: Au-18.5 to 17.5 wt%: Ni alloy At least one of these is desirable. This is because the melting temperature is 900 ° C. or higher and it is difficult to melt even in a high temperature region.
As the silver wax, for example, an Ag-Cu-based one can be used.

The semiconductor heating device of the present invention includes the heating plate having the above-described configuration. However, as shown in FIGS. 1-1 and 2, the heating plate is disposed in each of the upper chamber and the lower chamber. Both of them may be heating plates having the same shape, or may be heating plates having different shapes.

Moreover, in the heating apparatus for semiconductors of this invention, although the heating plate is provided in each of the upper and lower surfaces of a semiconductor wafer in the aspect shown to FIGS. 1-1, the heating plate is not necessarily provided in the upper and lower surfaces of a semiconductor wafer. The heating plate may be provided so as to face only one of the surfaces.
In this case, it is desirable to provide a heating plate on the lower surface side of the semiconductor wafer. This is because it is desirable to heat from the surface opposite to the processing surface of the semiconductor wafer.
Further, when the heating plate is disposed on the upper surface side of the semiconductor wafer, the semiconductor wafer can be heated uniformly even if the semiconductor wafer is warped. Most preferably, heating plates are provided on both sides.

Moreover, as shown in FIGS. 1-1 and 2, it is desirable that the heating plate is disposed so as to be movable up and down.
This is because, in the cooling process, by separating the distance from the semiconductor wafer, the semiconductor wafer is hardly affected by the heat of the heating plate and can be cooled in a shorter time.

Next, the manufacturing method of a heating plate is demonstrated.
First, a method for manufacturing a heating plate in which a heating element is formed on the surface of a ceramic substrate will be described with reference to FIG. FIG. 4 is a schematic diagram for explaining an example of a method for manufacturing a heating plate.

(1) Production of ceramic substrate First, if necessary, sintering aids such as yttria (Y ₂ O ₃ ) and B ₄ C, Na, and Ca are added to the above-described ceramic powder such as aluminum nitride and silicon carbide. After preparing a slurry by blending a compound, a binder and the like containing the slurry, the slurry is granulated by a method such as spray drying, and this granule is put in a mold and pressed into a plate shape or the like to form a product ( Green).
Examples of the binder include acrylic binders, ethyl cellulose, butyl cellulose, and polyvinyl alcohol.

Next, this generated shaped body is heated, fired and sintered to produce a ceramic plate. Thereafter, the ceramic substrate 11 is manufactured by processing into a predetermined shape. However, the shape may be used as it is after firing. By performing heating and firing while applying pressure, the ceramic substrate 11 without pores can be produced. Although heating and baking should just be more than sintering temperature, in nitride ceramic and carbide ceramic, it is 1000-2500 degreeC. Moreover, in an oxide ceramic, it is 1500-2000 degreeC.

Furthermore, if necessary, drilling is performed to form a bottomed hole 14 for embedding a temperature measuring element such as a thermocouple, and a through hole 15 for inserting a lifter pin (see FIG. 4A). .

(2) Process of printing a conductor paste on a ceramic substrate The conductor paste is generally a fluid having a high viscosity composed of metal particles, a resin, and a solvent. The conductor paste layer is formed by printing this conductor paste on a portion where the heating element 12 is to be provided using screen printing or the like.
The conductor paste layer is desirably formed so that the cross section of the heating element 12 after firing is square and flat.

(3) Firing of conductor paste The conductor paste layer printed on the bottom surface of the ceramic substrate 11 is heated and fired to remove the resin and solvent, and the metal particles are sintered and baked onto the bottom surface of the ceramic substrate 11 to heat the heating element 12. (See FIG. 4B). As for the temperature of heating and baking, 500-1000 degreeC is desirable.
When the above-described oxide is added to the conductor paste, the metal particles, the ceramic substrate, and the oxide are sintered and integrated, so that the adhesion between the heating element 12 and the ceramic substrate 11 is improved.

(4) Formation of metal coating layer Next, a metal coating layer (not shown) is formed on the surface of the heating element 12 as necessary (see FIG. 4C). The metal coating layer can be formed by electrolytic plating, electroless plating, sputtering, or the like, but electroless plating is optimal in view of mass productivity.

(5) Attachment of terminals and the like A terminal (external terminal 13) for connection with a power source is attached to the end of the heating element 12 with solder. Further, a thermocouple (not shown) is fixed to the bottomed hole 14 with silver brazing, gold brazing, or the like, and sealed with a heat resistant resin such as polyimide, and the manufacture of the ceramic heater 10 is completed (see FIG. 4D). ).

Next, a method for manufacturing a heating plate in which a heating element is formed inside a ceramic substrate will be described with reference to FIG. FIG. 5 is a schematic view for explaining another example of the manufacturing method of the ceramic heater.

(1) Method for Producing Green Sheet First, the above-described ceramic powder such as aluminum nitride or silicon carbide is mixed with a binder, a solvent or the like to prepare a paste, and a green sheet 130 is produced using the paste.
In preparing the paste, if necessary, yttria (Y 2 _{O 3)} and B ₄ sintering aid such as _C, Na, it may be added a compound containing Ca.
As said binder, the thing similar to what is used by manufacture of the ceramic heater 10 can be used.

As the solvent, α-terpineol, glycol and the like can be used.
A paste obtained by mixing these is formed into a sheet shape by a doctor blade method to produce a green sheet 130.
Further, the green sheet 130 is formed with a through hole in a portion where a through hole is to be formed by punching or the like.
The green sheet 130 can also have through holes formed in the portions that become the through holes 35 and the bottomed holes 34. The thickness of the green sheet is desirably 0.1 to 5 mm.

(2) Step of printing a conductor paste on a green sheet A conductor paste containing a metal paste or conductive ceramic for forming the heating element 32 is printed on the green sheet 130 to form a conductor paste layer 120 and penetrate therethrough. A conductive paste filling layer 160 for through holes is formed in the holes.
These conductive pastes contain metal particles or conductive ceramic particles.

The average particle size of tungsten particles and molybdenum particles is preferably 0.1 to 5 μm. This is because if the average particle size is less than 0.1 μm or exceeds 5 μm, it is difficult to print the conductor paste.
Examples of such a conductive paste include 85 to 87 parts by weight of metal particles or conductive ceramic particles; 1.5 to 10 parts by weight of at least one binder selected from acrylic, ethyl cellulose, butyl cellosolve, and polyvinyl alcohol; and Examples thereof include a composition (paste) obtained by mixing 1.5 to 10 parts by weight of at least one solvent selected from α-terpineol and glycol.

(3) Green sheet laminating step The green sheet 130 on which no conductor paste is printed is laminated on the upper side of the green sheet 130 on which the conductor paste is printed (see FIG. 5A).
At this time, it is desirable that the green sheet 130 on which the conductor paste is printed is laminated so that it is located at a position of 60% or less from the bottom with respect to the thickness of the laminated green sheet.
Further, the number of the upper green sheets is preferably 20 to 50.

(4) Firing of the green sheet laminate The green sheet laminate is heated and pressurized to sinter the green sheet and the internal conductor paste (see FIG. 5B).
Further, the heating temperature is preferably 1000 to 2000 ° C., and the pressurizing pressure is preferably 10 to 20 MPa. Heating is performed in an inert gas atmosphere. As the inert gas, for example, argon, nitrogen or the like can be used.

(5) Formation of a bottomed hole or the like A bottomed hole 34 for embedding a temperature measuring element such as a thermocouple, a through hole 35 for inserting a lifter pin, heat generation, if necessary, in the obtained sintered body In order to connect the body 32 to the external terminal 33 through the through hole 40, a bag hole 40a and the like are formed (see FIG. 5C).

The step of forming the above-mentioned bottomed hole 34 and through-hole 35 may be performed on the green sheet laminate, but is desirably performed on the sintered body. This is because there is a risk of deformation during the sintering process.
The bottomed hole 34 and the through hole 35 can be formed by performing a blasting process such as sandblasting after the polishing process.

(6) Attaching the external terminal The external terminal 33 is connected to the through hole 40 for connecting to the heating element 32 formed inside the ceramic substrate 31, and heated to reflow. 200-500 degreeC is suitable for heating temperature. Then, a temperature measuring element (not shown) having a lead wire is attached to the bottomed hole 34 using a silver solder or a gold solder, and sealed with a heat resistant resin such as polyimide, and the manufacture of the ceramic heater 30 is completed ( (Refer FIG.5 (d)). Note that the method of attaching the external terminal is not limited to the above-described method. For example, a method of crimping using the elastic force of an elastic member, a threaded groove in the through hole, For example, a method of screwing an external terminal can be used.

(Example 1-1)
A. Preparation of ceramic heater (1) Composition comprising 100 parts by weight of aluminum nitride powder (Tokuyama, average particle size 0.6 μm), 4 parts by weight of yttria (average particle size 0.4 μm), 12 parts by weight of acrylic binder and alcohol Was spray-dried to produce a granular powder.

(2) Next, this granular powder was put in a mold and formed into a flat plate shape to obtain a green body (green).

(3) Next, this generated shape was hot pressed at 1800 ° C. and a pressure of 20 MPa to obtain an aluminum nitride substrate having a thickness of 3 mm.
Next, a disc body having a diameter of 340 mm was cut out from the plate body to obtain a ceramic plate body. The ceramic substrate was then drilled to form a bottomed hole 14 for embedding a thermocouple and a through hole 15 for inserting a lifter pin.

(4) Next, a conductor paste layer was formed by screen printing on the bottom surface of the ceramic substrate obtained in the step (3). The printing pattern was a pattern in which a plurality of substantially concentric heating elements were formed.
As the above-mentioned conductor paste, Ag 48% by weight, Pt 21% by weight, SiO ₂ 1.0% by weight, B ₂ O ₃ 2.2% by weight, ZnO 4.1% by weight, PbO 3.4% by weight, ethyl acetate 3.4% by weight. %, Butyl carbitol 17.9 wt% composition was used.
This conductor paste was an Ag-Pt paste, and the silver particles were in the form of flakes with an average particle diameter of 4.5 μm. The Pt particles were spherical with an average particle size of 0.5 μm.

(5) Further, after forming the conductor paste layer of the heating element pattern, the ceramic substrate 11 is heated and baked at 780 ° C. to sinter Ag and Pt in the conductor paste and baked on the ceramic substrate. Formed.

(6) An electroless nickel plating bath comprising an aqueous solution of nickel sulfate 80 g / l, sodium hypophosphite 24 g / l, sodium acetate 12 g / l, boric acid 8 g / l, ammonium chloride 6 g / l (5) The ceramic substrate 11 produced in the above was immersed, and a 1 μm thick metal coating layer (nickel layer) was deposited on the surface of the silver-lead heating element 12.

(7) Next, a silver-lead solder paste (manufactured by Tanaka Kikinzoku Co., Ltd.) is printed by screen printing on the portion where the external terminal 13 for securing the connection with the power source is attached, and a solder layer (not shown) Formed. Next, the Kovar external terminal 13 was placed on the solder layer, heated and reflowed at 420 ° C., and the external terminal 13 was attached to the surface of the heating element 12 (metal coating layer 12a) (FIG. 4D). )reference).
Finally, a thermocouple (not shown) for temperature control was sealed with polyimide to obtain a ceramic heater (heating plate).

B. Preparation of cooling plate (1) A copper plate (rolled copper foil) is cut to produce a copper plate piece having a length of 20 mm and a thickness of 10 mm, which is cut to a width of 350 mm. Opening diameter: 5 mm) was formed at three locations. Further, a pipe for circulating water (or air) was attached to the through hole.

(2) Twelve pieces of copper plate produced in the above step (1) are joined together via a copper connecting member, and a cooling plate that can be stored in a roll shape is formed by forming slits according to the design. did.
Two cooling plates were produced. Moreover, the value based on JISZ8721 of the surface of the cooling plate produced at this process is N5.

C. Assembling the semiconductor heating device beforehand, the upper chamber in which the wiring, cylinder, lifter pin, refrigerant pipe, heat exchanger, etc. are arranged according to the design and the lower chamber having the storage part are separately prepared, The heating plate produced in the process A is attached to a predetermined position of the upper chamber, the heating plate produced in the process A and the cooling plate formed in the process B are attached to a predetermined position of the lower chamber, By integrating the chamber and the lower chamber, a semiconductor heating apparatus having the configuration shown in FIGS. Note that the temperature of the cooling plate is around 20 ° C. in a steady state.

(Examples 1-2 and 1-3)
A semiconductor heating device was fabricated in the same manner as in Example 1-1 except that the values based on JIS Z 8721 on the surface of the cooling plate were N3 and N1, respectively.

(Example 1-4)
In the step B of Example 1-1, a cooling plate composed of one rolled copper plate having a length of 250 mm, a width of 350 mm, and a thickness of 10 mm was prepared, and this cooling plate was used, and this was the same as Example 1-1. Thus, a semiconductor heating device was produced.
In addition, the value based on JISZ8721 of the surface of the cooling plate produced in the present Example is N5.
Also in this example, pipes for circulating the refrigerant (36 locations with an opening diameter of 5 mm) were formed on the cooling plate, and slits were also formed.

(Examples 1-5 and 1-6)
A semiconductor heating device was manufactured in the same manner as in Example 1-4 except that the values based on JIS Z 8721 on the surface of the cooling plate were set to N3 and N1, respectively.

(Reference Example 1-1)
A semiconductor heating device was produced in the same manner as in Example 1-1 except that the value based on JIS Z 8721 on the surface of the cooling plate was N6.

(Reference Example 1-2)
A semiconductor heating device was manufactured in the same manner as in Example 1-4 except that the value based on JIS Z 8721 on the surface of the cooling plate was N6.

(Example 2-1)
In the step (1) of Example 1-1 B, instead of the copper plate, an aluminum plate was used. Further, in the step (2), except that an aluminum connecting member was used, Example 1 and A semiconductor heating device was assembled in the same manner.
Note that the value based on JIS Z 8721 on the surface of the cooling plate is N5.

(Example 2-2, 2-3)
A semiconductor heating device was fabricated in the same manner as in Example 2-1, except that the values based on JIS Z 8721 on the surface of the cooling plate were N3 and N1, respectively.

(Example 2-4)
In the process B of Example 1-1, a cooling plate made of one aluminum plate having a length of 250 mm, a width of 350 mm, and a thickness of 10 mm was prepared, and this cooling plate was used. Thus, a semiconductor heating device was produced.
In addition, the value based on JISZ8721 of the surface of the cooling plate produced in the present Example is N5.
Also in this example, pipes for circulating the refrigerant (36 locations with an opening diameter of 5 mm) were formed on the cooling plate, and slits were also formed.

(Examples 2-5 and 2-6)
A semiconductor heating device was produced in the same manner as in Example 2-4 except that the values based on JIS Z 8721 on the surface of the cooling plate were set to N3 and N1, respectively.

(Reference Example 2-1)
A semiconductor heating device was produced in the same manner as in Example 2-1, except that the value based on JIS Z 8721 on the surface of the cooling plate was N6.

(Reference Example 2-2)
A semiconductor heating device was manufactured in the same manner as in Example 2-4 except that the value based on JIS Z 8721 on the surface of the cooling plate was N6.

(Example 3-1)
In the step (1) of Example 1 B, instead of the copper plate, a chromium alloy (SUS: stainless steel) plate was used, and in the step (2), a similar chromium alloy connecting member was used. A semiconductor heating apparatus was assembled in the same manner as in Example 1 except for the above.
Note that the value based on JIS Z 8721 on the surface of the cooling plate is N5.

(Examples 3-2 and 3-3)
A semiconductor heating device was produced in the same manner as in Example 3-1, except that the values based on JIS Z 8721 on the surface of the cooling plate were N3 and N1, respectively.

(Example 3-4)
In the step B of Example 1-1, a cooling plate composed of one chromium alloy (SUS: stainless steel) plate having a length of 250 mm, a width of 350 mm, and a thickness of 10 mm was prepared, and this cooling plate was used. A semiconductor heating device was produced in the same manner as in Example 1-1.
In addition, the value based on JISZ8721 of the surface of the cooling plate produced in the present Example is N5.
Also in this example, pipes for circulating the refrigerant (36 locations with an opening diameter of 5 mm) were formed on the cooling plate, and slits were also formed.

(Examples 3-5 and 3-6)
A semiconductor heating device was produced in the same manner as in Example 3-4 except that the values based on JIS Z 8721 on the surface of the cooling plate were N3 and N1, respectively.

(Reference Example 3-1)
A semiconductor heating device was produced in the same manner as in Example 3-1, except that the value based on JIS Z 8721 on the surface of the cooling plate was N6.

(Reference Example 3-2)
A semiconductor heating device was manufactured in the same manner as in Example 3-4 except that the value based on JIS Z 8721 on the surface of the cooling plate was N6.

(Example 4-1)
In the step (1) of Example 1 B, a nickel alloy plate (nickel content, 85 wt% or more) is used in place of the copper plate, and in the step (2), the same nickel alloy connection is used. A semiconductor heating device was assembled in the same manner as in Example 1 except that the members were used.
The value based on JIS Z 8721 on the surface of the cooling plate is N5.

(Examples 4-2 and 4-3)
A semiconductor heating device was fabricated in the same manner as in Example 4-1, except that the values based on JIS Z 8721 on the surface of the cooling plate were N3 and N1, respectively.

(Example 4-4)
In the step B of Example 1-1, a cooling plate composed of one nickel alloy plate (nickel content, 85% by weight or more) having a length of 250 mm, a width of 350 mm, and a thickness of 10 mm was prepared, and this cooling plate was used. A semiconductor heating device was produced in the same manner as in Example 1-1 except that.
In addition, the value based on JISZ8721 of the surface of the cooling plate produced in the present Example is N5.
Also in this example, pipes for circulating the refrigerant (36 locations with an opening diameter of 5 mm) were formed on the cooling plate, and slits were also formed.

(Examples 4-5 and 4-6)
A semiconductor heating device was manufactured in the same manner as in Example 4-4 except that the values based on JIS Z 8721 on the surface of the cooling plate were set to N3 and N1, respectively.

(Reference Example 4-1)
A semiconductor heating device was manufactured in the same manner as in Example 4-1, except that the value based on JIS Z 8721 on the surface of the cooling plate was set to N6.

(Reference Example 4-2)
A semiconductor heating device was manufactured in the same manner as in Example 4-4 except that the value based on JIS Z 8721 on the surface of the cooling plate was set to N6.

(Comparative Example 1)
A heating plate on the lower surface side of the semiconductor wafer (a heating plate attached in the lower chamber) is fixed in the state of the heat treatment process (the state shown in FIG. 1-1), and further, in the cooling process, the cooling plate That is, the semiconductor heating apparatus was assembled in the same manner as in Example 1 except that the cooling plate was attached so that the heating plate was positioned between the semiconductor wafer and the cooling plate.

Using the semiconductor heating device assembled in Examples 1 to 4 and the comparative example, the semiconductor wafer was heated and cooled by the following method, and the performance of the semiconductor heating device was evaluated.
In the semiconductor heating apparatus according to the example and the reference example, after the semiconductor wafer is carried into the apparatus and held by the lifter pins, the heating surface of the lower heating plate is set at a distance of 0. The temperature of the semiconductor wafer was heated from room temperature to 150 ° C. with a heating plate placed at a position of 1 mm and maintained at 150 ° C. above and below, and kept at this temperature for 120 seconds. After that, the lower heating plate is moved down together with the movable plate, and then the cooling plate is pulled out from the storage portion, inserted between the semiconductor wafer and the heating plate, and further, the semiconductor wafer is brought close to the cooling plate. The semiconductor wafer was cooled to 50 ° C. and the time required for this cooling was measured. Here, the distance between the cooling plate and the semiconductor wafer is 0.1 mm.
The distance between the upper heating plate and the semiconductor wafer during cooling is 30 mm.

Further, in the semiconductor heating apparatus according to the comparative example, after heating the semiconductor wafer to 150 ° C. as described above, the semiconductor wafer is kept for 120 seconds, and then the heating plate is turned off, and the lower heating plate approaches the semiconductor wafer. In this state, the cooling plate is moved closer to the lower heating plate, and the semiconductor wafer is cooled to 50 ° C. with the lower heating plate interposed between the semiconductor wafer and the cooling plate. The time required was measured.
In the above evaluation, the measured cooling time is as shown in Table 1 below.

As shown in Table 1, in the semiconductor heating device according to the example and the reference example, the semiconductor wafer could be cooled in a short time, whereas in the semiconductor heating device according to the comparative example, a long time was required. It was necessary.
Further, in the semiconductor heating device according to the reference example, the semiconductor wafer is cooled in about 1 minute, whereas in the semiconductor heating device according to the example, the semiconductor wafer can be cooled within 30 seconds. Thus, it was found that the semiconductor heating device according to the example, that is, the semiconductor heating device having a cooling plate value based on JIS Z 8721 of N5 or less is desirable.
Further, when a cooling plate composed of a plurality of plates is used, the semiconductor wafer can be cooled within 20 seconds, and it has become clear that it is more desirable as a semiconductor heating device.

It is sectional drawing which shows typically one Embodiment of the heating apparatus for semiconductors of this invention. It is sectional drawing which shows typically one Embodiment of the heating apparatus for semiconductors of this invention. (A) is a side view which shows typically a part of cooling plate in which the refrigerant pipe was formed, (b) is a top view of a part of cooling plate shown to (a). (A) is a side view which shows typically a part of cooling plate in which the refrigerant pipe was formed, (b) is a top view of a part of cooling plate shown to (a). It is a schematic diagram for demonstrating an example of the manufacturing method of a heating plate. It is a schematic diagram for demonstrating an example of the manufacturing method of a heating plate.

Explanation of symbols

100 Semiconductor Heating Device 102 Upper Chamber 103 Lower Chamber 110, 130 Heating Plate 112 Heating Element 116 Lifter Pin 119 Semiconductor Wafer 150 Storage Unit 151 Cooling Plate 151 Slit

Claims (8)

A heating apparatus for a semiconductor comprising a holding unit for holding a semiconductor wafer, a heating plate for heating the semiconductor wafer, and a cooling plate for cooling the heated semiconductor wafer,
The heating plate is disposed so as to face at least one surface of the semiconductor wafer,
The semiconductor heating apparatus, wherein the cooling plate is configured to be inserted between the semiconductor wafer and the heating plate. 2. The semiconductor heating device according to claim 1, wherein the cooling plate contains at least one metal selected from Cu, Al, Cr, and Ni. The said cooling plate is a heating apparatus for semiconductors of Claim 1 or 2 whose value based on JISZ8721 is N5 or less. The semiconductor heating device according to claim 1, wherein the cooling plate is movable in a direction substantially parallel to a main surface of the semiconductor wafer. The said heating plate is a heating apparatus for semiconductors in any one of Claims 1-4 in which the slit is formed in the edge part. The semiconductor cooling device according to claim 1, wherein the cooling plate is formed by connecting a plurality of plates. The semiconductor heating device according to claim 1, further comprising a storage portion for storing the cooling plate. The semiconductor heating device according to claim 7, wherein the cooling plate is in a roll state in the storage unit.

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