JP2006165221A - Heat treatment equipment and method of semiconductor wafer, and method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce power consumption in the lamp type heat treatment equipment of a semiconductor wafer. <P>SOLUTION: The heat treatment equipment of the semiconductor wafer comprises a stage 12 for mounting the semiconductor wafer 1, and a lamp type heating mechanism 20 movable above the stage 12 and heating the semiconductor wafer 1. A heating source of the heating mechanism 20 has a lateral width shorter than that of the semiconductor wafer 1 and a longitudinal width longer than that of the semiconductor wafer 1, and a mechanism 22 for guiding the heating mechanism 20 in the direction substantially parallel with the lateral width is provided. The stage 12 rotates while using the ejection force of inert gas supplied from a gas supply opening 30 as a rotational power source. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor wafer heat treatment apparatus, a semiconductor wafer heat treatment method, and a semiconductor device manufacturing method. In particular, the present invention relates to a semiconductor wafer heat treatment apparatus, a semiconductor wafer heat treatment method, and a semiconductor device manufacturing method capable of reducing the amount of power consumption. The present invention also relates to a semiconductor wafer heat treatment apparatus, a semiconductor wafer heat treatment method, and a semiconductor device manufacturing method that make it difficult to lift the outer periphery of the semiconductor wafer.

  FIG. 5 is a cross-sectional view for explaining an example of the configuration of a conventional semiconductor wafer heat treatment apparatus. The semiconductor wafer heat treatment apparatus shown in the figure is a lamp type annealing apparatus, and has a lamp unit 120. The lamp unit 120 has a substantially circular bottom surface, and has a plurality of halogen lamps 121 on the entire bottom surface. A quartz chamber 110 is disposed below the lamp unit 120. Inside the chamber 110, a stage 112 for placing the silicon wafer 101 is provided. The planar shape of the stage 112 is substantially circular, and is rotated at, for example, 60 rpm by a motor (not shown) around the rotation shaft 112a.

  A plurality of thermometers 114 are embedded in the inside of the stage 112 along the radial direction, and the measurement results of the plurality of thermometers 114 are fed back to the outputs of the plurality of halogen lamps 121, so that silicon The wafer 101 is heated uniformly.

  The above-described conventional semiconductor wafer heat treatment apparatus consumes a large amount of electricity, and its reduction is desired. Further, since the semiconductor wafer is heated from the upper surface, the outer peripheral portion of the wafer may be lifted by thermal stress.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a semiconductor wafer heat treatment apparatus, a semiconductor wafer heating method, and a semiconductor device manufacturing method that can reduce the amount of power consumption. It is to provide. It is another object of the present invention to provide a semiconductor wafer heat treatment apparatus, a semiconductor wafer heating method, and a semiconductor device manufacturing method in which the outer peripheral portion of the semiconductor wafer is hardly lifted.

In order to solve the above problems, a semiconductor wafer heat treatment apparatus according to the present invention includes a stage on which a semiconductor wafer is placed,
A lamp-type heating mechanism that is movable above the stage and heats the semiconductor wafer;

  According to this semiconductor wafer heat treatment apparatus, since the lamp-type heating mechanism can move above the stage, the entire surface of the semiconductor wafer can be heated even if it is smaller than the conventional one. Therefore, the amount of power consumed by the heating mechanism can be reduced as compared with the conventional case.

  The heating source of the heating mechanism may include a guide mechanism that is shorter in width than the semiconductor wafer and longer in width than the semiconductor wafer, and further guides the heating mechanism in a direction substantially parallel to the width.

  You may further comprise the auxiliary heating mechanism arrange | positioned around the stage. As a result, the peripheral portion of the semiconductor wafer is heated by the auxiliary heating mechanism, so that it is less likely to float than in the prior art.

  A rotation mechanism that rotates the stage may be further provided. In this way, the semiconductor wafer is heated more uniformly. Note that a gas supply port that supplies an inert gas to the semiconductor wafer may be provided, and the rotation mechanism may include a rotating member that rotates when sprayed with an inert gas supplied from the gas supply port. This eliminates the need for a motor for rotating the stage, thereby further reducing power consumption.

A semiconductor device according to the present invention includes a stage on which a semiconductor wafer is placed,
A rotation mechanism for rotating the stage;
A heating mechanism for heating the entire surface of the semiconductor wafer on the stage;
A gas supply port for supplying an inert gas to the semiconductor wafer;
Comprising
The rotating mechanism has a rotating member that rotates when sprayed with an inert gas supplied from the gas supply port.

  The gas supply port may be located below the stage, and the rotating member may be provided on the rotating shaft of the stage or the lower surface of the stage so as to be concentric with the rotating shaft.

Another semiconductor wafer heat treatment apparatus according to the present invention includes a stage on which a semiconductor wafer is placed,
A heating mechanism located above the stage for heating the entire surface of the semiconductor wafer;
An auxiliary heating mechanism that is located around the stage and heats the peripheral portion of the semiconductor wafer.

  According to this semiconductor wafer heat treatment apparatus, the peripheral portion of the semiconductor wafer is heated by the auxiliary heating mechanism, so that the floating of the peripheral portion of the semiconductor wafer is suppressed as compared with the conventional case.

Another semiconductor wafer heat treatment apparatus according to the present invention is located above the semiconductor wafer, and has a heating mechanism having a lateral width shorter than the semiconductor wafer and a vertical width longer than the semiconductor wafer,
A stage on which a semiconductor wafer is placed;
A rotation mechanism for rotating the stage.

  According to this semiconductor wafer heat treatment apparatus, even if the lateral width of the heating mechanism is shorter than that of the semiconductor wafer, the semiconductor wafer rotates, so that the entire surface of the semiconductor wafer is heated by the heating mechanism. Therefore, the amount of power consumed by the heating mechanism can be reduced as compared with the conventional case.

  The semiconductor wafer heat treatment method according to the present invention heats the entire surface of the semiconductor wafer by moving a lamp-type heating mechanism on the semiconductor wafer using a moving mechanism.

  The semiconductor wafer heat treatment method according to the present invention heats the semiconductor wafer while rotating a stage on which the semiconductor wafer is mounted by a gas jet output from a gas supply port that supplies an inert gas around the semiconductor wafer. To do.

The method for manufacturing a semiconductor device according to the present invention includes a step of heat-treating and activating a semiconductor wafer into which impurities are introduced,
In the step of heat-treating the semiconductor wafer, the entire surface of the semiconductor wafer is heated by moving a lamp-type heating mechanism on the semiconductor wafer using a moving mechanism.

BEST MODE FOR CARRYING OUT THE INVENTION

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1A is a plan view of a lamp-type semiconductor wafer heat treatment apparatus according to the first embodiment, and FIG. 1B is a cross-sectional view taken along line AA in FIG. This semiconductor wafer heat treatment apparatus has a silicon nitride stage 12 on which a silicon wafer 1 is placed inside a quartz chamber 10. An inert gas (for example, nitrogen) is introduced into the chamber 10 via a pipe (not shown). The stage 12 has a disk shape, and a rotating shaft 12a is fixed at the center of the lower surface thereof. The rotating shaft 12a is connected to a motor (not shown), and the rotating shaft 12a and the stage 12 are rotated at a speed of, for example, 30 rpm to 120 rpm by the motor.

  A long lamp unit 20 is disposed above the chamber 10. The lamp unit 20 is shorter than the diameter of the silicon wafer 1 and longer than the chamber 10. The lamp unit 20 has a structure in which a plurality of halogen lamps are continuously arranged in the longitudinal direction. The lamp unit 20 reciprocates above the stage 12 in the width direction of the lamp unit 20 along a guide rail 22 arranged around the chamber 10 by a power source (not shown). Thereby, the lamp unit 20 can heat the entire surface of the silicon wafer 1. The moving speed of the lamp unit 20 is controlled by a control unit (not shown) and varies depending on, for example, the heating temperature of the silicon wafer 1.

  The chamber 10 has a shape in which the upper part of the rectangular parallelepiped is expanded in four directions. Auxiliary halogen lamps 16 are arranged over the entire circumference below the expanded portion 10a. The auxiliary halogen lamp 16 supplementarily heats the peripheral portion of the silicon wafer 1 on the stage 12, thereby suppressing the floating of the peripheral portion of the silicon wafer 1. Each auxiliary halogen lamp 16 is controlled by a control unit (not shown).

  A plurality of thermometers 14 are embedded inside the stage 12. These thermometers 14 are for measuring the temperature distribution of the stage 12, and the measurement results are output to a control unit (not shown). The control unit feeds back the temperature distribution of the stage 12 to the output of each of the plurality of halogen lamps included in the lamp unit 20 and the movement of the lamp unit 20 so that the temperature of the stage 12 becomes uniform.

  This semiconductor wafer heat treatment apparatus reacts, for example, a heat treatment process for activating impurities introduced into a semiconductor wafer or a polysilicon wiring and titanium formed thereon in a semiconductor device manufacturing process. And used in a heat treatment process for salicide formation. Examples of the region into which the impurity is introduced include an impurity region that functions as a source and a drain, and a low-concentration impurity region (LDD region) adjacent to the impurity region.

  As described above, according to the present embodiment, the lamp unit 20 is reciprocated above the silicon wafer 1. For this reason, even if the width of the halogen lamp included in the lamp unit 20 is shorter than the diameter of the silicon wafer 1, the entire surface of the silicon wafer 1 is heated. Therefore, the amount of power consumed by the halogen lamp can be reduced as compared with the conventional case.

A plurality of thermometers 14 are provided inside the stage 12 on which the silicon wafer 1 is placed to measure the temperature distribution of the stage 12. The control unit controls the output of the halogen lamp and the movement of the lamp unit 20 so that the temperature distribution is uniform. Accordingly, the entire surface of the silicon wafer 1 can be heated uniformly.
Further, since the peripheral portion of the silicon wafer 1 is heated by the auxiliary halogen lamp 16, the floating of the peripheral portion of the silicon wafer 1 can be suppressed.

  FIG. 2 is a cross-sectional view for explaining the configuration of the semiconductor wafer heat treatment apparatus according to the second embodiment. The configuration and operation of the semiconductor wafer heat treatment apparatus according to this embodiment are the same as those of the first embodiment, except that the stage 12 uses an inert gas (for example, nitrogen) jet power as a power source. Hereinafter, the same components as those of the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

  In the present embodiment, a pipe 30 for introducing an inert gas into the chamber 10 is attached to the side surface of the chamber 10. The tip of the pipe 30 extends into the chamber 10 and is located near the lower surface of the stage 12.

  A gear-shaped rotating member 12 b is provided on the lower surface of the stage 12. The teeth of the rotating member 12b have a plate shape so that the inert gas supplied from the pipe 30 is blown to rotate.

  When the semiconductor wafer heat treatment apparatus is operated, an inert gas is supplied from the pipe 30 into the chamber 10. At this time, the inert gas supplied from the piping 30 pushes the teeth of the rotating member 12b to rotate the rotating member 12b, the stage 12, and the silicon wafer 1 about the rotating shaft 12a. If the supply amount of the inert gas is insufficient with the pipe 30 alone, the chamber 10 is provided with another pipe.

  Also according to this embodiment, the same effect as that of the first embodiment can be obtained. Further, since a gear-like rotating member 12b that converts the jet output of the inert gas supplied from the pipe 30 into a rotational force is provided on the lower surface of the stage 12, a motor for rotating the stage 12 is not necessary. Therefore, power consumption can be further reduced.

  FIG. 3 is a cross-sectional view for explaining the configuration of a semiconductor wafer heat treatment apparatus according to the third embodiment. The semiconductor wafer heat treatment apparatus according to this embodiment is the same as that of the second embodiment except that the configuration and operation of the heater and the chamber 10 is a substantially rectangular parallelepiped. Hereinafter, the same components as those of the second embodiment are denoted by the same reference numerals, and description thereof is omitted.

In this embodiment, the semiconductor wafer heat treatment apparatus has a substantially disk-shaped lamp unit 24 above the chamber 10. The lamp unit 24 has a plurality of halogen lamps (not shown) distributed over the entire lower surface, and can simultaneously heat the entire surface of the silicon wafer 1 on the stage 12. The plurality of halogen lamps are grouped in units of a plurality of areas, and each group is controlled by a control unit (not shown).
In this embodiment, an auxiliary halogen lamp 16 is also provided.

Also in this embodiment, since the gear-shaped rotating member 12b that converts the jet output of the inert gas supplied from the pipe 30 into a rotational force is provided on the lower surface of the stage 12, a motor for rotating the stage 12 is not necessary. become. Therefore, power consumption can be further reduced.
In addition, since the auxiliary halogen lamp 16 is provided, the peripheral portion of the silicon wafer 1 on the stage 12 is supplementarily heated, and lifting of the peripheral portion of the silicon wafer 1 is suppressed.

  FIG. 4A is a plan view for explaining the configuration of the semiconductor wafer heat treatment apparatus according to the fourth embodiment, and FIG. 4B is a cross-sectional view taken along the line AA of FIG. This embodiment is the same as the second embodiment except that the lamp unit 20 is fixed by a fixing jig 26 so as to be positioned on the substantially central portion of the stage 12. In this embodiment, the stage 12 and the silicon wafer 1 are rotated by the inert gas introduced from the pipe 30, whereby the entire surface of the silicon wafer 1 is heated by the lamp unit 20. Since other configurations are the same as those of the second embodiment, the same reference numerals as those of the second embodiment are given and description thereof is omitted.

  Also in this embodiment, the same effect as in the second embodiment can be obtained. Moreover, since it is not necessary to reciprocate the lamp unit 20, power consumption can be further reduced.

  Note that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.

(A) is a top view of the lamp | ramp type semiconductor wafer heat processing apparatus which concerns on 1st Embodiment, (B) is AA sectional drawing of (A). Sectional drawing for demonstrating the structure of the semiconductor wafer heat processing apparatus which concerns on 2nd Embodiment. Sectional drawing for demonstrating the structure of the semiconductor wafer heat processing apparatus which concerns on 3rd Embodiment. (A) is a top view of the lamp | ramp type semiconductor wafer heat processing apparatus which concerns on 4th Embodiment, (B) is AA sectional drawing of (A). Sectional drawing for demonstrating an example of a structure of the conventional semiconductor wafer heat processing apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,101 ... Silicon wafer, 10, 110 ... Chamber, 12, 112 ... Stage, 12a, 112a ... Rotating shaft, 12b ... Rotating member, 14, 114 ... Thermometer, 16 ... Auxiliary halogen lamp, 20, 24, 120 ... Lamp unit, 22 ... guide rail, 26 ... fixing jig, 30 ... pipe, 121 ... halogen lamp

Claims (12)

A stage on which a semiconductor wafer is placed;
A lamp-type heating mechanism that is movable above the stage and heats the semiconductor wafer;
A semiconductor wafer heat treatment apparatus comprising: The heating source of the heating mechanism has a shorter width than the semiconductor wafer, a longer width than the semiconductor wafer,
The semiconductor wafer heat treatment apparatus according to claim 1, further comprising a guide mechanism that guides the heating mechanism in a direction substantially parallel to the lateral width.   The semiconductor wafer heat treatment apparatus according to claim 1, further comprising an auxiliary heating mechanism disposed around the stage.   The semiconductor wafer heat treatment apparatus according to claim 1, further comprising a rotation mechanism for rotating the stage. Comprising a gas supply port for supplying an inert gas to the semiconductor wafer;
The semiconductor wafer heat treatment apparatus according to claim 4, wherein the rotation mechanism includes a rotation member that rotates by being sprayed with an inert gas supplied from the gas supply port. A stage on which a semiconductor wafer is placed;
A rotation mechanism for rotating the stage;
A heating mechanism for heating the entire surface of the semiconductor wafer on the stage;
A gas supply port for supplying an inert gas to the semiconductor wafer;
Comprising
The said rotation mechanism is a semiconductor wafer heat processing apparatus which has a rotating member rotated by spraying the inert gas supplied from the said gas supply port. The gas supply port is located below the stage,
The semiconductor wafer heat treatment apparatus according to claim 5, wherein the rotating member is provided on a rotating shaft of a stage or a lower surface of the stage so as to be concentric with the rotating shaft. A stage on which a semiconductor wafer is placed;
A heating mechanism located above the stage for heating the entire surface of the semiconductor wafer;
An auxiliary heating mechanism that is located around the stage and heats a peripheral portion of the semiconductor wafer;
A semiconductor wafer heat treatment apparatus comprising: A heating mechanism located above the semiconductor wafer, having a lateral width shorter than the semiconductor wafer and a longitudinal width longer than the semiconductor wafer;
A stage on which a semiconductor wafer is placed;
A rotation mechanism for rotating the stage;
A semiconductor wafer heat treatment apparatus comprising:   A method for heat-treating a semiconductor wafer, wherein the entire surface of the semiconductor wafer is heated by moving a lamp-type heating mechanism on the semiconductor wafer using a moving mechanism.   A method for heat-treating a semiconductor wafer, wherein the semiconductor wafer is heated while rotating a stage on which the semiconductor wafer is mounted by a gas jet output from a gas supply port for supplying an inert gas around the semiconductor wafer. Comprising a step of heat-treating and activating the semiconductor wafer into which the impurity has been introduced,
A method of manufacturing a semiconductor device, wherein in the step of heat-treating the semiconductor wafer, the entire surface of the semiconductor wafer is heated by moving a lamp-type heating mechanism on the semiconductor wafer using a moving mechanism.

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