JP2006158185A - Power semiconductor device - Google Patents

Power semiconductor device Download PDF

Info

Publication number
JP2006158185A
JP2006158185A JP2005304774A JP2005304774A JP2006158185A JP 2006158185 A JP2006158185 A JP 2006158185A JP 2005304774 A JP2005304774 A JP 2005304774A JP 2005304774 A JP2005304774 A JP 2005304774A JP 2006158185 A JP2006158185 A JP 2006158185A
Authority
JP
Japan
Prior art keywords
semiconductor
power semiconductor
effect transistor
metal insulating
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005304774A
Other languages
Japanese (ja)
Inventor
Atsuhiko Kuzumaki
Hiroshi Mochikawa
淳彦 葛巻
宏 餅川
Original Assignee
Toshiba Corp
株式会社東芝
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2004309884 priority Critical
Application filed by Toshiba Corp, 株式会社東芝 filed Critical Toshiba Corp
Priority to JP2005304774A priority patent/JP2006158185A/en
Publication of JP2006158185A publication Critical patent/JP2006158185A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12Modifications for increasing the maximum permissible switched current
    • H03K17/127Modifications for increasing the maximum permissible switched current in composite switches
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K2017/6875Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using self-conductive, depletion FETs

Abstract

<P>PROBLEM TO BE SOLVED: To provide a power semiconductor device of smaller size, capable of reducing a switching loss caused by a reverse recovery current for a reduced heating loss. <P>SOLUTION: In a power semiconductor device 1, a first metal insulating film semiconductor type field effect transistor 22 and a second metal insulating film semiconductor type field effect transistor 23, connected serially in a plurality of numbers, are provided between a negative electrode terminal 11 and the source region of a power semiconductor switching element 21 of a cascode element 20, with a high-speed diode 30 electrically provided in parallel with the cascode element 20. The power semiconductor switching element 21 is normally-on type, and the first metal insulating film semiconductor type field effect transistor 22 and the second metal insulating film semiconductor type field effect transistor 23 are normally-off type. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a power semiconductor device, and more particularly to a power semiconductor device including a cascode element between a positive electrode terminal and a negative electrode terminal.
  A junction field effect transistor and a static induction transistor that constitute a power semiconductor device are power semiconductor switching elements capable of realizing high-speed operation in a high voltage and high power region. This power semiconductor switching element generally exhibits normally-on characteristics in which a drain current flows when the gate voltage is 0V. If a negative voltage is not sufficiently applied to the gate electrode and a drain voltage is applied, a large drain current flows and the power semiconductor switching element may be destroyed. For this reason, it is relatively difficult to handle a power semiconductor switching element as compared with a transistor having normally-off characteristics such as a bipolar transistor, a metal oxide semiconductor field effect transistor, and an insulated gate bipolar transistor.
  Patent Document 1 below proposes a normally-off type composite semiconductor element (hereinafter simply referred to as “cascode element”) by cascode connection, which can solve such a technical problem. As shown in FIG. 5, the cascode element 110 includes a normally-on element and a normally-off element that are electrically connected in series between the positive terminal 100 and the negative terminal 101. For example, a junction field effect transistor 111 is used as a normally-on element, and a metal oxide semiconductor field effect transistor 112 is used as a normally-off element, for example.
  The metal oxide semiconductor field effect transistor 112 includes a diode (rectifier diode) 113 between the source region and the drain region. In the cascode element 110, a current can also flow from the negative terminal 101 to the positive terminal 100 through the diode 113 and the junction field effect transistor 111.
A drive circuit 120 is connected to the gate electrode of the metal oxide semiconductor field effect transistor 112 through a resistor 125. The drive circuit 120 includes an inverter 121 and a power source 122.
JP 2001-251846 A
  In the power semiconductor device described above, the following points have not been considered. When the cascode element 110 shown in FIG. 5 is assembled vertically and used as a bi-directional chopper circuit, or when a bridge is assembled and used as an inverter, when the cascode element 110 of one arm is turned on during switching operation, The diode 113 of the metal oxide semiconductor field effect transistor 112 of the arm is turned off (off). At this time, minority carriers are accumulated in the depletion layer generated at the PN junction of the diode 113 in the non-conducting state. Minority carriers accumulated in the depletion layer flow to the diode 113 as a reverse recovery current, so that a reverse recovery loss occurs. The reverse recovery loss is a switching loss of the diode 113 and occurs every switching operation. The reverse recovery current flows into the cascode element 110 in the conduction transient state, and causes an increase in switching loss of the cascode element 110.
  Further, an increase in switching loss results in an increase in heat generation loss. For this reason, since it is necessary to use a large cooling heat sink, the power semiconductor device becomes large.
  Such a problem is not peculiar to the junction field effect transistor 111 of the cascode element 110 in the power semiconductor device, and is the same when the junction field effect transistor 111 is replaced with an electrostatic induction transistor. Occurs.
  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a power semiconductor device capable of reducing the switching loss due to the reverse recovery current.
  Furthermore, an object of the present invention is to provide a power semiconductor device that can reduce switching loss and heat generation loss and can be miniaturized.
  In order to solve the above-described problems, according to an embodiment of the present invention, in a power semiconductor device, a normally-on power semiconductor switching element in which one of main electrodes is connected to a positive electrode terminal, and a power A cascode element comprising a plurality of normally-off type metal insulating film semiconductor-type field effect transistors electrically connected in series between the other main electrode of the semiconductor switching element and a negative electrode terminal; And a high speed diode having a cathode region connected to a positive terminal and an anode region connected to a negative terminal.
  ADVANTAGE OF THE INVENTION According to this invention, the power semiconductor device which can reduce the switching loss resulting from a reverse recovery current can be provided.
  Furthermore, according to the present invention, it is possible to provide a power semiconductor device that can reduce switching loss and heat generation loss and can be reduced in size.
  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the embodiment, components having the same function are denoted by the same reference numerals, and redundant description is omitted.
(First embodiment)
[Configuration of power semiconductor device]
As shown in FIG. 1, the power semiconductor device 1 according to the first embodiment of the present invention is a normally-on type in which one of the main electrodes (drain region) is connected to the positive terminal 10 and has a high breakdown voltage. Two normally-off type power semiconductor switching elements 21, electrically connected in series between the other main electrode (source region) of power semiconductor switching element 21 and negative electrode terminal 11 and having a low withstand voltage A cascode element 20 including the first metal insulating semiconductor field effect transistor 22 and the second metal insulating semiconductor field effect transistor 23, and a positive terminal connected electrically in antiparallel with the cascode element 20. 10 includes a high speed diode 30 having a cathode region connected to the negative electrode terminal and an anode region connected to a negative electrode terminal.
  Furthermore, the power semiconductor device 1 is connected to the resistor 51 connected to the gate electrode of the first metal insulating semiconductor field effect transistor 22 and the gate electrode of the second metal insulating semiconductor field effect transistor 23. A resistor 52, a Zener diode 53 inserted between the source region and the gate electrode of the second metal insulating semiconductor field effect transistor 23, and a drive circuit connected to each of the resistors 51 and 52 and the negative electrode terminal 11. 60. The drive circuit 60 has a function of controlling conduction and non-conduction of the first metal insulation semiconductor field effect transistor 22 and the second metal insulation semiconductor field effect transistor 23, and includes an inverter 61 and a power supply 62. ing.
  The power semiconductor switching element 21 of the cascode element 20 is formed of a junction field effect transistor in the first embodiment. In this junction field effect transistor, when the gate potential applied to the gate electrode is, for example, 20 V or more lower than the source potential applied to the source region, the junction field effect transistor becomes non-conductive (off), and when the gate potential is higher than that, it becomes conductive (on). A junction field effect transistor can be used. A gate potential dropped from the negative electrode terminal 11 by the gate resistance is applied to the gate electrode. That is, this junction field effect transistor has a high breakdown voltage of 600V or more. The power semiconductor switching element 21 may be constituted by an electrostatic induction transistor instead of the junction field effect transistor.
  Both junction field effect transistors and electrostatic induction transistors can realize high-speed operation in a high voltage and high power region, and can reduce switching loss in both forward and reverse directions.
  Each of the first metal insulating semiconductor field effect transistor 22 and the second metal insulating semiconductor field effect transistor 23 is a transistor having a silicon semiconductor-insulator-metal structure. That is, the first embodiment includes any of a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), a MISFET (Metal Insulator Semiconductor Field Effect Transistor), and an IGFET (Insulated Gate Field Effect Transistor).
  The first metal insulating semiconductor field effect transistor 22 has a source region connected to the negative electrode terminal 11, a drain region connected to the source region of the second metal insulating semiconductor field effect transistor 23, and a gate electrode connected to a resistor. The drive circuit 60 is connected through 51. The first metal insulating semiconductor field effect transistor 22 becomes conductive when a gate potential is applied, for example, 2 V to 10 V or more, and becomes non-conductive below that.
  A parasitic diode 25 is formed between the source region and the drain region of the first metal insulating semiconductor field effect transistor 22. The anode region of the parasitic diode 25 is electrically connected to the source region, and the cathode region is electrically connected to the drain region. The parasitic diode 25 functions as a rectifier diode.
  The second metal insulating semiconductor field effect transistor 23 has a source region connected to the drain region of the first metal insulating semiconductor field effect transistor 22 and a drain region connected to the source region of the power semiconductor switching element 21. Then, the gate electrode is connected to the drive circuit 60 through the resistor 52. Similar to the first metal insulating film semiconductor field effect transistor 22, the second metal insulating semiconductor field effect transistor 23 becomes conductive when a gate potential is applied, for example, 2V to 10V or more, and is non-conductive below that. become. A parasitic diode 26 similar to the parasitic diode 25 is formed between the source region and the drain region of the second metal insulating film semiconductor field effect transistor 23.
  The high-speed diode 30 mainly aims to reduce the loss by actively flowing a current through the high-speed diode 30 instead of the cascode element 20 when a current flows from the negative electrode terminal 11 to the positive electrode terminal 10. Are connected in reverse parallel. In the first embodiment, a unipolar diode can be practically used as the high-speed diode 30. In a unipolar diode, there is no accumulation of minority carriers, and no reverse recovery charge is formed, so no reverse recovery current flows. Further, the unipolar diode has a charge of only the junction capacitance component, and the reverse recovery loss of the unipolar diode is extremely small. Therefore, the loss of the high speed diode 30 can be reduced by using the unipolar diode as the high speed diode 30.
  In the first embodiment, a Schottky barrier diode (SBD) can be practically used as the unipolar diode. The SBD has a property that the reverse recovery time is short and the reverse recovery loss is small as compared with the parasitic diodes 25 and 26, respectively. An SBD constructed with a wide gap semiconductor has a high breakdown voltage of 200 V or more, for example. As the unipolar diode, a junction barrier Schottky diode (JBS) having the same characteristics as SBD can be used.
  In the first embodiment, the power semiconductor device 1 includes the power semiconductor switching element 21 of the cascode element 20, the first metal insulating semiconductor field effect transistor 22, and the second metal insulating semiconductor field. Each of the effect transistor 23 and the high-speed diode 30 is configured by one semiconductor chip, and can be constructed by packaging one or a plurality of the semiconductor chips. The power semiconductor device 1 includes a power semiconductor switching element 21 of the cascode element 20, a first metal insulating semiconductor field effect transistor 22, a second metal insulating semiconductor field effect transistor 23, and a high speed diode 30. Two or more can be packaged into one and modularized. Furthermore, the power semiconductor device 1 may be constructed by constructing a plurality of semiconductor chips on which one or more of those elements are mounted and packaging the plurality of semiconductor chips into one module.
[Operation of power semiconductor device]
Next, the operation of the above power semiconductor device will be described. First, the operation from the non-conductive state to the conductive state is as follows. A drive start signal is supplied from the drive circuit 60 to the gate electrode of the first metal insulating semiconductor field effect transistor 22 and the gate electrode of the second metal insulating semiconductor field effect transistor 23 of the cascode element 20. This drive start signal is generated by the potential difference between the gate electrode and the source region (negative electrode terminal 11) of the first metal insulating semiconductor field effect transistor 22 and the gate electrode of the second metal insulating semiconductor field effect transistor 23. The gate potential at which the potential difference between the source region and the source region is 10V, for example.
  As a result of supplying the drive start signal, the potential difference between the drain region and the source region of both the first metal insulating semiconductor field effect transistor 22 and the second metal insulating semiconductor field effect transistor 23 is eliminated. Precisely, there is a potential difference between the drain region and the source region only for the on-resistance drop voltage (for example, 0.1 V). Then, the source potential of the source region of the power semiconductor switching element 21 becomes approximately the same as that of the negative electrode terminal 11, and the potential difference between the gate electrode and the source region is eliminated, so that the power semiconductor switching element 21 becomes conductive. . That is, when the first metal insulating film semiconductor field effect transistor 22 and the second metal insulating semiconductor field effect transistor 23 are turned on, the power semiconductor switching element 21 is also turned on, and the positive electrode terminal 10 and the negative electrode terminal 11 are connected. Current flows between them.
  Next, the operation from the conductive state to the non-conductive state is as follows. A drive stop signal is supplied from the drive circuit 60 to the gate electrode of the first metal insulating semiconductor field effect transistor 22 and to the gate electrode of the second metal insulating semiconductor field effect transistor 23, respectively. This drive stop signal is generated when the potential difference between the gate electrode and the source region (negative electrode terminal 11) of the first metal insulating semiconductor field effect transistor 22 or the gate electrode of the second metal insulating semiconductor field effect transistor 23 is detected. The gate potential at which the potential difference between the source region and the source region is 0V, for example.
  As a result of the supply of the drive stop signal, both the first metal insulating film semiconductor field effect transistor 22 and the second metal insulating semiconductor field effect transistor 23 are turned off, and the source region and the drain region are not electrically connected. For example, a potential difference of 25 V is generated between them. That is, the potential difference between the source region and the drain region of the first metal insulating film semiconductor field effect transistor 22 and the second metal between the source region of the power semiconductor switching element 21 and the negative electrode terminal 11. A potential difference of 50 V is generated by adding the potential difference between the source region and the drain region of the insulating film semiconductor field effect transistor 23. This potential difference is applied between the source region and the drain region of the power semiconductor switching element 21, and −50 V is applied to the gate electrode of the power semiconductor switching element 21. As a result, the power semiconductor switching element 21 is completely turned off, and the first metal insulating film semiconductor field effect transistor 22 and the second metal insulating semiconductor field effect transistor 23 are turned off. The current flowing between the positive terminal 10 and the negative terminal 11 can be cut off. The threshold voltage of the power semiconductor switching element 21 according to the first embodiment is adjusted so as to be completely non-conductive at −40 V or less, for example.
  Here, the high-speed diode 30 connected in parallel to the cascode element 20 operates only during the dead time period of the inverter. When a current flows from the negative electrode terminal 11 of the power semiconductor device 1 to the positive electrode terminal 10, the first metal insulating film semiconductor field effect transistor 22 and the second metal insulating film semiconductor field effect transistor 23 are connected in series. Therefore, since the voltage drop of the parasitic diodes 25 and 26 is equivalent to two elements, the voltage drop of the high speed diode 30 is smaller than that of the cascode element 20, and the current flowing in the reverse direction is Most of the current can be passed to the high-speed diode 30 without being shunted. Furthermore, even if the source current slightly flows through the cascode element 20, the reverse recovery current becomes smaller in proportion to the source current, so that the reverse recovery loss of the cascode element 20 can be reduced. Therefore, the loss of the cascode element 20 can be reduced.
  Further, in the case of a bidirectional chopper circuit in which the cascode element 20 of the power semiconductor device 1 is vertically installed or an inverter in which a bridge is formed by the cascode element 20, the cascode element 20 of one arm is conducted and the conduction transient of the opposite arm is conducted. Loss due to reverse recovery current flowing into the cascode element 20 in the state can be reduced. That is, the switching loss of the cascode element 20 can be reduced.
  Further, a plurality of first metal insulating film semiconductor field effect transistors 22 connected in series (divided into a plurality) between the source region of the power semiconductor switching element 21 of the cascode element 20 and the negative electrode terminal 11 and the first By inserting the two metal insulating film semiconductor field effect transistors 23, the element breakdown voltage per element can be reduced to half or less, and the conduction resistance (on resistance) value per element can be reduced. There is a square relationship between a decrease in the conduction resistance value of the element and an increase in the element breakdown voltage. Therefore, it is possible to reduce the conduction resistance in the forward current (drain current) while improving the element breakdown voltage of the cascode element 20.
  Then, by dividing the metal insulating semiconductor field effect transistor into a plurality of first metal insulating semiconductor field effect transistors 22 and second metal insulating semiconductor field effect transistors 23, parasitic diodes 25, 26 are obtained. The area per element and the element breakdown voltage can be reduced. Therefore, in each of the parasitic diodes 25 and 26, the reverse recovery charge amount can be reduced and the reverse recovery current can be reduced, so that the reverse recovery loss can be reduced.
  In the power semiconductor device 1 according to the first embodiment configured as described above, the switching loss due to the reverse recovery current can be reduced. Furthermore, in the power semiconductor device 1 according to the first embodiment, the switching loss and the heat loss can be reduced, and the size can be reduced.
[First Modification]
The power semiconductor device 1 according to the first modification of the first embodiment of the present invention is a wide gap semiconductor in which the power semiconductor switching element 21 of the cascode element 20 in the power semiconductor device 1 shown in FIG. It is comprised by. In the power semiconductor switching element 21 formed using a wide gap semiconductor, the breakdown electric field strength can be increased by an order of magnitude compared to a silicon semiconductor, and a drift layer for maintaining the element breakdown voltage can be provided. Since the thickness can be reduced to about 10, the conduction loss of the power semiconductor switching element 21 can be reduced. For example, the dielectric breakdown voltage of the power semiconductor switching element 21 can be increased about 10 times that of a silicon semiconductor.
  Further, in the power semiconductor switching element 21, the saturation electron drift velocity can be increased about twice as compared with the silicon semiconductor, so that the frequency can be increased about 10 times.
  In the first modification, silicon carbide (SiC), gallium nitride (GaN), diamond, or the like can be practically used as the wide gap semiconductor.
  As described above, in the power semiconductor device 1 according to the first modification, the power semiconductor switching element 21 of the cascode element 20 is formed of a wide gap semiconductor, whereby the conduction loss and switching of the power semiconductor switching element 21 are performed. Since loss can be reduced, low loss and downsizing can be realized.
[Second Modification]
The power semiconductor device 1 according to the second modification of the first embodiment of the present invention has a high-speed diode 30 connected in reverse parallel to the cascode element 20 in the power semiconductor device 1 shown in FIG. A gap semiconductor is used. In the high-speed diode 30 formed using a wide gap semiconductor, the breakdown electric field strength can be increased by an order of magnitude compared to a silicon semiconductor, and the device breakdown voltage can be improved. For example, the device breakdown voltage of the high-speed diode 30 can be increased about 10 times that of a silicon semiconductor.
  In the high-speed diode 30 that requires a high breakdown region, only a bipolar diode can be used when a silicon semiconductor is used, but a unipolar diode, specifically SBD or JBD, is used when a wide gap semiconductor is used. Can be used. When a unipolar diode is formed using a silicon semiconductor, the unipolar diode has a large conduction loss and cannot be used practically. That is, the high-speed diode 30 formed using the wide gap semiconductor can reduce the reverse recovery loss even at a high element breakdown voltage, and thus the loss of the high-speed diode 30 can be reduced.
  For the wide gap semiconductor, SiC or the like described in the first modification can be practically used.
  Thus, in the power semiconductor device 1 according to the second modification, the reverse recovery loss of the high speed diode 30 can be reduced even in the high withstand voltage region by configuring the high speed diode 30 with a wide gap semiconductor. In addition, since the switching loss of the power semiconductor switching element 21 can be reduced even in the high withstand voltage region, it is possible to reduce the loss and reduce the size.
  In the power semiconductor device 1 according to the first embodiment, the first modification and the second modification can be combined. That is, in the power semiconductor device 1, each of the power semiconductor switching element 21 and the high-speed diode 30 of the cascode element 1 can be configured by a wide gap semiconductor.
(Second Embodiment)
The second embodiment of the present invention describes an example in which the connection structure between the cascode element 20 and the drive circuit 60 of the power semiconductor device 1 according to the first embodiment is changed. As shown in FIG. 2, in the power semiconductor device 1, the drive circuit 60 (output of the inverter 61) is interposed between the resistor 51 and the gate electrode of the first metal insulating film semiconductor field effect transistor 22 of the cascode element 20. The drive circuit 60 is connected to the gate electrode of the second metal insulating semiconductor field effect transistor 23 via the diode 55 and the resistor 52. A resistor 54 is provided between the gate electrode and the source region of the second metal insulating semiconductor field effect transistor 23 in place of the Zener diode 53 of the power semiconductor device 1 according to the first embodiment. Has been inserted.
  The power semiconductor device 1 according to the second embodiment is basically equivalent to the power semiconductor device 1 according to the first embodiment although the circuit connection structure is slightly different. The operation can be performed and the same effects can be obtained.
(Third embodiment)
In the third embodiment of the present invention, an example in which the number of serially connected metal insulating semiconductor field effect transistors is changed in the cascode element 20 of the power semiconductor device 1 according to the first embodiment described above will be described. To do. As shown in FIG. 3, in the power semiconductor device 1, three first metal insulating semiconductor field effect devices are provided between the source region of the power semiconductor switching element 21 of the cascode element 20 and the negative electrode terminal 11. Each of the transistor 22, the second metal insulating semiconductor field effect transistor 23, and the third metal insulating semiconductor field effect transistor 24 is electrically connected in series. The configurations of the first metal insulating semiconductor field effect transistor 22 and the second metal insulating semiconductor field effect transistor 23 are the same as those of the first embodiment of the power semiconductor device 1 according to the first embodiment. The metal insulating film semiconductor field effect transistor 22 and the second metal insulating semiconductor field effect transistor 23 have the same configuration.
  The third metal insulating semiconductor field effect transistor 24 is basically configured in the same structure as the first metal insulating semiconductor field effect transistor 22. In the third metal insulating semiconductor field effect transistor 24, the source region is connected to the drain region of the second metal insulating semiconductor field effect transistor 23 and the drain region is connected to the source region of the power semiconductor switching element 21. The gate electrode is connected to the drive circuit 60 via the resistor 56 and the Zener diode 57. The gate electrode and the source region of the third metal insulating semiconductor field effect transistor 24 are connected via a resistor 58. A parasitic diode 27 is electrically connected in parallel between the source region and the drain region of the third metal insulating semiconductor field effect transistor 24.
  In the power semiconductor device 1 according to the third embodiment configured as described above, in addition to the first metal insulating semiconductor field effect transistor 22 and the second metal insulating semiconductor field effect transistor 23, The power semiconductor according to the first embodiment is further provided with a third metal insulating semiconductor field effect transistor 24, and a total of three metal insulating semiconductor field effect transistors are electrically connected in series. As with the device 1, the switching loss due to the reverse recovery current can be reduced. Furthermore, in the power semiconductor device 1 according to the third embodiment, the switching loss and the heat loss can be reduced, and the size can be reduced.
(Fourth embodiment)
The fourth embodiment of the present invention describes an example in which the power semiconductor device 1 according to the second embodiment is combined with the power semiconductor device 1 according to the third embodiment. is there. As shown in FIG. 4, in the power semiconductor device 1, the source of the power semiconductor switching element 21 of the cascode element 20 is the same as in the power semiconductor device 1 according to the third embodiment shown in FIG. Between the region and the negative electrode terminal 11, a first metal insulating semiconductor field effect transistor 22, a second metal insulating semiconductor field effect transistor 23, and a third metal insulating semiconductor field effect transistor 24 are connected in series. It is connected to the.
  The circuit connection structure between the first metal insulating film semiconductor field effect transistor 22 and the second metal insulating semiconductor field effect transistor 23 and the drive circuit 60 is the power semiconductor device 1 according to the third embodiment described above. It is the same. The gate electrode of the third metal insulating semiconductor field effect transistor 24 is connected to the drive circuit 60 via a resistor 56 and Zener diodes 57 and 55.
  The power semiconductor device 1 according to the fourth embodiment configured as described above can achieve the same effects as those of the power semiconductor device 1 according to the above-described third embodiment.
(Other embodiments)
The present invention is not limited to the above embodiments. For example, the present invention may include four or more metal insulating film semiconductor field effect transistors connected in series between the source region of the power semiconductor switching element 21 of the cascode element 20 and the negative electrode terminal 11.
1 is a circuit diagram of a power semiconductor device according to a first embodiment of the present invention. It is a circuit diagram of the power semiconductor device which concerns on the 2nd Embodiment of this invention. FIG. 6 is a circuit diagram of a power semiconductor device according to a third embodiment of the present invention. It is a circuit diagram of the power semiconductor device which concerns on the 4th Embodiment of this invention. It is a circuit diagram of the semiconductor device for electric power which concerns on the prior art of this invention.
Explanation of symbols
DESCRIPTION OF SYMBOLS 1 Power semiconductor device 10 Positive electrode terminal 11 Negative electrode terminal 20 Cascode element 21 Power semiconductor switching element 22 1st metal insulation film semiconductor type field effect transistor 23 2nd metal insulation film semiconductor type field effect transistor 24 3rd metal insulation Membrane Semiconductor Field Effect Transistor 25-27 Parasitic Diode 30 High Speed Diode 60 Drive Circuit

Claims (7)

  1. A normally-on type power semiconductor switching element in which one of the main electrodes is connected to the positive electrode terminal;
    A cascode element comprising a plurality of normally-off metal insulating film semiconductor field effect transistors electrically connected in series between the other main electrode of the power semiconductor switching element and a negative electrode terminal;
    A fast diode electrically connected in parallel with the cascode element, a cathode region connected to the positive terminal, and an anode region connected to the negative terminal;
    A power semiconductor device comprising:
  2.   2. The power semiconductor device according to claim 1, wherein the power semiconductor switching element is a junction field effect transistor or a static induction transistor.
  3.   The power semiconductor device according to claim 1, wherein the high-speed diode is a unipolar diode.
  4.   4. The power semiconductor device according to claim 3, wherein the unipolar diode is a Schottky barrier diode or a junction barrier diode.
  5.   The power semiconductor device according to any one of claims 1 to 4, wherein the power semiconductor switching element is formed of a wide gap semiconductor.
  6.   6. The power semiconductor device according to claim 1, wherein the high-speed diode is formed of a wide gap semiconductor.
  7.   The power semiconductor device according to claim 5, wherein the wide gap semiconductor is silicon carbide, gallium nitride, or diamond.
JP2005304774A 2004-10-25 2005-10-19 Power semiconductor device Pending JP2006158185A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004309884 2004-10-25
JP2005304774A JP2006158185A (en) 2004-10-25 2005-10-19 Power semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005304774A JP2006158185A (en) 2004-10-25 2005-10-19 Power semiconductor device

Publications (1)

Publication Number Publication Date
JP2006158185A true JP2006158185A (en) 2006-06-15

Family

ID=36635776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005304774A Pending JP2006158185A (en) 2004-10-25 2005-10-19 Power semiconductor device

Country Status (1)

Country Link
JP (1) JP2006158185A (en)

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007036218A (en) * 2005-06-27 2007-02-08 Internatl Rectifier Corp Active drive of normally-on and normally-off cascode connection configuration device through unsymmetrical cmos
WO2008041685A1 (en) * 2006-10-02 2008-04-10 Hitachi, Ltd. Gate drive circuit
JP2008182884A (en) * 2007-01-23 2008-08-07 Schneider Toshiba Inverter Europe Sas Control device of electronic switch for electric power and variable speed driver having same device
WO2008096709A1 (en) * 2007-02-06 2008-08-14 Kabushiki Kaisha Toshiba Semiconductor switch and power converter to which the semiconductor switch is applied
JP2008288802A (en) * 2007-05-16 2008-11-27 Hitachi Ltd Semiconductor circuit
WO2010150549A1 (en) * 2009-06-26 2010-12-29 株式会社 東芝 Power conversion device
JP2011067051A (en) * 2009-09-18 2011-03-31 Sharp Corp Inverter, and electrical apparatus and solar power generator employing the same
JP2011512119A (en) * 2008-02-12 2011-04-14 トランスフォーム インコーポレーテッド Bridge circuit and its components
JP2011101217A (en) * 2009-11-06 2011-05-19 Sharp Corp Semiconductor device and electronic apparatus
JP2012010430A (en) * 2010-06-22 2012-01-12 Toshiba Corp Semiconductor switch, control device, power converter, and semiconductor device
CN102388535A (en) * 2009-03-27 2012-03-21 瑞士苏黎世联邦理工学院 Switching device having a cascode circuit
JP2012205356A (en) * 2011-03-24 2012-10-22 Sharp Corp Rectification switch unit, rectification circuit, and switching power supply device
EP2521259A2 (en) 2011-05-06 2012-11-07 Sharp Kabushiki Kaisha Semiconductor device and electronic device
WO2013146570A1 (en) * 2012-03-27 2013-10-03 シャープ株式会社 Cascode circuit
JP2013215086A (en) * 2012-03-30 2013-10-17 Schneider Toshiba Inverter Europe Sas Control device used in switch type power supply system
JP2014063831A (en) * 2012-09-20 2014-04-10 Fujitsu Ltd Power supply circuit and power supply device
CN105391281A (en) * 2014-08-29 2016-03-09 英飞凌科技奥地利有限公司 System and method for a switch having a normally-on transistor and a normally-off transistor
WO2016043192A1 (en) * 2014-09-19 2016-03-24 株式会社 東芝 Semiconductor device
JPWO2014034346A1 (en) * 2012-08-28 2016-08-08 シャープ株式会社 Composite type semiconductor device
US9690314B2 (en) 2008-09-23 2017-06-27 Transphorm Inc. Inductive load power switching circuits
US10128829B2 (en) 2015-05-15 2018-11-13 Sharp Kabushiki Kaisha Composite semiconductor device
CN109618440A (en) * 2019-01-30 2019-04-12 九阳股份有限公司 A kind of electromagnetic heating control circuit and control method
US10707204B2 (en) 2015-08-07 2020-07-07 Sharp Kabushiki Kaisha Composite semiconductor device

Cited By (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007036218A (en) * 2005-06-27 2007-02-08 Internatl Rectifier Corp Active drive of normally-on and normally-off cascode connection configuration device through unsymmetrical cmos
US7737761B2 (en) 2006-10-02 2010-06-15 Hitachi, Ltd. Gate drive circuit with reduced switching loss and noise
WO2008041685A1 (en) * 2006-10-02 2008-04-10 Hitachi, Ltd. Gate drive circuit
JP2008092663A (en) * 2006-10-02 2008-04-17 Hitachi Ltd Gate driving circuit
JP2008182884A (en) * 2007-01-23 2008-08-07 Schneider Toshiba Inverter Europe Sas Control device of electronic switch for electric power and variable speed driver having same device
WO2008096709A1 (en) * 2007-02-06 2008-08-14 Kabushiki Kaisha Toshiba Semiconductor switch and power converter to which the semiconductor switch is applied
US8089780B2 (en) 2007-02-06 2012-01-03 Kabushiki Kaisha Toshiba Semiconductor switch and power conversion system provided with semiconductor switch
JP4531075B2 (en) * 2007-05-16 2010-08-25 株式会社日立製作所 Semiconductor circuit
JP2008288802A (en) * 2007-05-16 2008-11-27 Hitachi Ltd Semiconductor circuit
US9899998B2 (en) 2008-02-12 2018-02-20 Transphorm Inc. Bridge circuits and their components
US8912839B2 (en) 2008-02-12 2014-12-16 Transphorm Inc. Bridge circuits and their components
JP2011512119A (en) * 2008-02-12 2011-04-14 トランスフォーム インコーポレーテッド Bridge circuit and its components
US9690314B2 (en) 2008-09-23 2017-06-27 Transphorm Inc. Inductive load power switching circuits
CN102388535A (en) * 2009-03-27 2012-03-21 瑞士苏黎世联邦理工学院 Switching device having a cascode circuit
JP2012522410A (en) * 2009-03-27 2012-09-20 エー・テー・ハー・チューリッヒEth Zuerich Switching device having a cascode circuit
US8723589B2 (en) 2009-03-27 2014-05-13 Eth Zurich Switching device with a cascode circuit
WO2010150549A1 (en) * 2009-06-26 2010-12-29 株式会社 東芝 Power conversion device
CN102449898A (en) * 2009-06-26 2012-05-09 株式会社东芝 Power conversion device
JP2011010487A (en) * 2009-06-26 2011-01-13 Central Res Inst Of Electric Power Ind Power conversion device
US8649198B2 (en) 2009-06-26 2014-02-11 Kabushiki Kaisha Toshiba Power conversion device
JP2011067051A (en) * 2009-09-18 2011-03-31 Sharp Corp Inverter, and electrical apparatus and solar power generator employing the same
JP2011101217A (en) * 2009-11-06 2011-05-19 Sharp Corp Semiconductor device and electronic apparatus
CN102368685A (en) * 2010-06-22 2012-03-07 株式会社东芝 Semiconductor switching system
JP2012010430A (en) * 2010-06-22 2012-01-12 Toshiba Corp Semiconductor switch, control device, power converter, and semiconductor device
CN102368685B (en) * 2010-06-22 2014-08-20 株式会社东芝 Semiconductor switching system
JP2012205356A (en) * 2011-03-24 2012-10-22 Sharp Corp Rectification switch unit, rectification circuit, and switching power supply device
US8710543B2 (en) 2011-05-06 2014-04-29 Sharp Kabushiki Kaisha Cascode circuit device with improved reverse recovery characteristic
EP2521259A2 (en) 2011-05-06 2012-11-07 Sharp Kabushiki Kaisha Semiconductor device and electronic device
WO2013146570A1 (en) * 2012-03-27 2013-10-03 シャープ株式会社 Cascode circuit
JP5800986B2 (en) * 2012-03-27 2015-10-28 シャープ株式会社 Cascode circuit
EP2645569B1 (en) * 2012-03-30 2019-01-02 Schneider Toshiba Inverter Europe SAS Control device employed in a switched electrical power supply system
JP2013215086A (en) * 2012-03-30 2013-10-17 Schneider Toshiba Inverter Europe Sas Control device used in switch type power supply system
JPWO2014034346A1 (en) * 2012-08-28 2016-08-08 シャープ株式会社 Composite type semiconductor device
JP2014063831A (en) * 2012-09-20 2014-04-10 Fujitsu Ltd Power supply circuit and power supply device
CN105391281A (en) * 2014-08-29 2016-03-09 英飞凌科技奥地利有限公司 System and method for a switch having a normally-on transistor and a normally-off transistor
CN105391281B (en) * 2014-08-29 2018-08-10 英飞凌科技奥地利有限公司 The system and method for switch containing normal conducting transistor and normally-off transistor
JP2016063448A (en) * 2014-09-19 2016-04-25 株式会社東芝 Semiconductor device
US10003331B2 (en) 2014-09-19 2018-06-19 Kabushiki Kaisha Toshiba Semiconductor device including normally-off type transistors and normally-on type transistor connected series
WO2016043192A1 (en) * 2014-09-19 2016-03-24 株式会社 東芝 Semiconductor device
US10128829B2 (en) 2015-05-15 2018-11-13 Sharp Kabushiki Kaisha Composite semiconductor device
US10707204B2 (en) 2015-08-07 2020-07-07 Sharp Kabushiki Kaisha Composite semiconductor device
CN109618440A (en) * 2019-01-30 2019-04-12 九阳股份有限公司 A kind of electromagnetic heating control circuit and control method

Similar Documents

Publication Publication Date Title
JP2006158185A (en) Power semiconductor device
US9331068B2 (en) Hybrid wide-bandgap semiconductor bipolar switches
JP4832731B2 (en) Power semiconductor device
JP6201422B2 (en) Semiconductor device
JP2007215389A (en) Power semiconductor element and semiconductor circuit using same
US9548299B2 (en) Semiconductor device
US9768160B2 (en) Semiconductor device, electronic circuit and method for switching high voltages
JP6413104B2 (en) Surge protection element
JP2018117110A (en) Substrate voltage control circuit
KR102178107B1 (en) Rc-igbt with freewheeling sic diode
JP2007082351A (en) Power converter
JP4091595B2 (en) Semiconductor device
JPH11274482A (en) Semiconductor device
US20200185906A1 (en) Semiconductor Device with Surge Current Protection
CN105870116B (en) Semiconductor device with a plurality of transistors
US9654027B2 (en) Semiconductor device and power converter using the same
JP2008539571A (en) Controllable semiconductor diodes, electronic components and intermediate voltage converters
US10475909B2 (en) Electric assembly including a bipolar switching device and a wide bandgap transistor
JP2016004935A (en) Semiconductor device
US10886909B2 (en) Electric assembly including an insulated gate bipolar transistor device and a wide-bandgap transistor device
US10432190B2 (en) Semiconductor device and method for controlling semiconductor device
JP2015177094A (en) semiconductor device
JP6884186B2 (en) Bidirectional switch
EP3012977A1 (en) Method for switching a semiconductor module, semiconductor module and half-bridge
GB2575810A (en) Power semiconductor device