JP2006157646A - Wiring board - Google Patents

Wiring board Download PDF

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JP2006157646A
JP2006157646A JP2004346888A JP2004346888A JP2006157646A JP 2006157646 A JP2006157646 A JP 2006157646A JP 2004346888 A JP2004346888 A JP 2004346888A JP 2004346888 A JP2004346888 A JP 2004346888A JP 2006157646 A JP2006157646 A JP 2006157646A
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layer
slit
line
signal line
wiring
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Teru Muto
輝 武藤
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Sony Corp
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0237—High frequency adaptations
    • H05K1/025—Impedance arrangements, e.g. impedance matching, reduction of parasitic impedance
    • H05K1/0253—Impedance adaptations of transmission lines by special lay-out of power planes, e.g. providing openings

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Structure Of Printed Boards (AREA)
  • Waveguides (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wiring board in which a desired characteristic impedance can be obtained even when it is formed thinly and electromagnetic field radiation is little as well. <P>SOLUTION: A wiring layer 12 is provided on one of the surfaces of an insulation layer and a grounding layer 13 is provided on the other surface. A slit 21 is formed on the grounding layer 13 facing a signal line 12a formed on the wiring layer 12. The slit 21 is provided with a connection line 13c connecting the grounding layers 13a and 13b on both sides of the slit 21 at an interval shorter than 1/4 of a wavelength at the maximum frequency of signals transmitted by using the signal line 12a. Even when the insulation layer and the wiring layer 12 are thinned, by adjusting the width of the slit 21, the desired characteristic impedance is obtained without reducing the line width of the signal line 12a. The resonance of a feedback current is prevented, an electromagnetic field radiated from the slit 21 is suppressed, and a shielding effect is obtained. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

この発明は配線基板に関する。詳しくは、絶縁層の一方の面に配線層を設け、他方の面に接地層を設けるものとし、配線層に形成した信号線路と対向させて接地層にスリットを形成し、スリットには、信号線路を用いて伝送する信号の最大周波数における波長の１／４より短い間隔で、スリットの両側の接地層を接続する接続線路を設けることにより、配線基板を薄くしても所望の特性インピーダンスを得られ電磁界放射も少なくするものである。   The present invention relates to a wiring board. Specifically, a wiring layer is provided on one surface of the insulating layer, and a ground layer is provided on the other surface. A slit is formed in the ground layer so as to face the signal line formed in the wiring layer. By providing connection lines that connect the ground layers on both sides of the slit at intervals shorter than ¼ of the wavelength at the maximum frequency of the signal transmitted using the line, the desired characteristic impedance can be obtained even if the wiring board is thinned. Electromagnetic field radiation is also reduced.

従来、絶縁層と導体層を積層した配線基板では、絶縁層の一方の面に設けられた導体層を配線層として信号線路を形成し、他方の面に設けられた導体層を接地層として用い、信号線路の幅や厚さ、絶縁層の誘電率や厚さを調整して、所望の特性インピーダンスを有したマイクロストリップ線路を形成することが行われている。また、信号線路の両面に絶縁層を介して接地層を設けたストリップ線路を形成することも行われている。   Conventionally, in a wiring board in which an insulating layer and a conductor layer are laminated, a signal line is formed by using a conductor layer provided on one surface of the insulating layer as a wiring layer, and a conductor layer provided on the other surface is used as a ground layer. A microstrip line having a desired characteristic impedance is formed by adjusting the width and thickness of a signal line and the dielectric constant and thickness of an insulating layer. In addition, a strip line in which a ground layer is provided on both surfaces of a signal line via an insulating layer is also formed.

また、機器の小型・軽量化のために、配線基板としてフレキシブル基板が多く用いられている。フレキシブル基板は、柔軟性を確保するため絶縁層や導体層が薄くされている。ここで、絶縁層を薄いものとした場合には、等価的にキャパシタンスが大きくなり特性インピーダンスが低下してしまう。このため、信号線路の線路幅を狭くしてキャパシタンスを減らしインダクタンスを大きくすることで、所望の特性インピーダンスを確保することが行われる。しかし、信号線路の線路幅が狭くなるに伴い、精度良く信号線路を形成することが困難となってしまう。そこで、特許文献１の発明では、接地層を円状やメッシュ状に切り抜いて特性インピーダンスを制御することが行われている。また、特許文献２の発明では、信号線路と対向させて接地層にスリットを形成し、スリットの幅を調整することで、特性インピーダンスを制御することが行われている。   In addition, in order to reduce the size and weight of equipment, flexible boards are often used as wiring boards. In the flexible substrate, the insulating layer and the conductor layer are thinned to ensure flexibility. Here, when the insulating layer is thin, the capacitance is equivalently increased and the characteristic impedance is lowered. For this reason, a desired characteristic impedance is ensured by reducing the line width of the signal line to reduce the capacitance and increase the inductance. However, as the line width of the signal line becomes narrower, it becomes difficult to form the signal line with high accuracy. Thus, in the invention of Patent Document 1, the characteristic impedance is controlled by cutting out the ground layer into a circular shape or a mesh shape. Further, in the invention of Patent Document 2, the characteristic impedance is controlled by forming a slit in the ground layer facing the signal line and adjusting the width of the slit.

特許第３３９７７０７号公報Japanese Patent No. 3397707 特開２００４−１４０３０８号公報JP 2004-140308 A

ところで、接地層をメッシュ構造や円状に切り抜くものとすると、パターン形状が複雑になり、例えば図１２に示すように接地層５３をメッシュ構造としたときは、信号線路５１ａを流れる信号電流に対して接地層５３を流れる帰還電流の経路が長くなって、帰還電流の損失が大きくなる。すなわち、信号を伝送する際に損失が大きくなってしまう。また、ノイズの発生が大きくなってしまうおそれもある。   By the way, if the ground layer is cut into a mesh structure or a circle, the pattern shape becomes complicated. For example, when the ground layer 53 has a mesh structure as shown in FIG. 12, the signal current flowing through the signal line 51a is reduced. As a result, the path of the feedback current flowing through the ground layer 53 becomes longer, and the loss of the feedback current increases. That is, the loss increases when transmitting a signal. Moreover, there is a possibility that the generation of noise becomes large.

信号線路と対向させて接地層にスリットを形成する場合、図１３Ａに示すように、絶縁層６２を介して信号線路６１ａと対向する接地層６３に、信号線路６１ａと対向するスリット７１を設け、スリット７１の長さＬＳが信号線路を用いて伝送する信号の最大周波数の１／２波長以上となると、スリット７１によって分割された接地層間で共振を生じるおそれがあり、共振を生じてしまうと他の信号線路に影響を与えてしまう。さらに、スリットが形成されていることから共振を生じると図１３Ｂに示すようにスリットからの電磁界放射が大きくなってしまう。   When forming a slit in the ground layer facing the signal line, as shown in FIG. 13A, a slit 71 facing the signal line 61a is provided in the ground layer 63 facing the signal line 61a via the insulating layer 62, If the length LS of the slit 71 is equal to or greater than ½ wavelength of the maximum frequency of the signal transmitted using the signal line, resonance may occur between the ground layers divided by the slit 71. Will affect the signal line. Furthermore, when resonance occurs due to the formation of the slit, electromagnetic field radiation from the slit increases as shown in FIG. 13B.

そこで、この発明では、薄く形成しても所望の特性インピーダンスを得ることができ、電磁界放射も少ない配線基板を提供するものである。   Therefore, the present invention provides a wiring board that can obtain a desired characteristic impedance even when it is thinly formed, and has less electromagnetic field radiation.

この発明に係る配線基板は、絶縁層の一方の面に配線層を設け、他方の面に接地層を設けるものとし、配線層に形成した信号線路と対向させて接地層にスリットを形成し、スリットには、信号線路を用いて伝送する信号の最大周波数における波長の１／４より短い間隔で、スリットの両側の接地層を接続する接続線路を設けたものである。   The wiring board according to the present invention is to provide a wiring layer on one surface of the insulating layer and a ground layer on the other surface, and to form a slit in the ground layer facing the signal line formed in the wiring layer, The slit is provided with a connection line that connects the ground layers on both sides of the slit at an interval shorter than ¼ of the wavelength at the maximum frequency of the signal transmitted using the signal line.

この発明においては、配線層に形成した信号線路と対向させて接地層にスリットが形成されて、このスリットには、信号線路を用いて伝送する信号の最大周波数における波長の１／４より短い間隔で、スリットの両側の接地層を接続する接続線路が例えば信号線路よりも狭い線路幅で設けられる。また、接続線路がメッシュ構造とされて、メッシュ開口部の周囲長が、信号線路を用いて伝送する信号の最大周波数における波長の１／２より短くされる。   In the present invention, a slit is formed in the ground layer so as to face the signal line formed in the wiring layer, and this slit has an interval shorter than ¼ of the wavelength at the maximum frequency of the signal transmitted using the signal line. Thus, the connection line connecting the ground layers on both sides of the slit is provided with a line width narrower than the signal line, for example. Further, the connection line has a mesh structure, and the perimeter of the mesh opening is made shorter than ½ of the wavelength at the maximum frequency of the signal transmitted using the signal line.

この発明によれば、絶縁層の一方の面に配線層を設け、他方の面に接地層が設けられて、配線層に形成した信号線路と対向させて接地層にスリットが形成されて、スリットには、信号線路を用いて伝送する信号の最大周波数における波長の１／４より短い間隔で、スリットの両側の接地層を接続する接続線路が設けられる。このため、絶縁層や配線層が薄くされてもスリットの幅を調整することで、信号線路の線路幅を狭することなく所望の特性インピーダンスを得ることができる。また、接続線路が設けられるので、スリットの両側に位置する接地層を同電位に保つことができる。さらに、接続線路は、信号線路を用いて伝送する信号の最大周波数における波長の１／４より短い間隔で設けられるので、帰還電流の共振が防止されて、スリットから放射される電磁界が抑制されることにより、シールド効果を得ることができる。すなわち、配線基板を薄く形成しても所望の特性インピーダンスを得ることができ、電磁界放射も少なくできる。   According to the present invention, the wiring layer is provided on one surface of the insulating layer, the ground layer is provided on the other surface, and the slit is formed in the ground layer so as to face the signal line formed in the wiring layer. Is provided with a connection line that connects the ground layers on both sides of the slit at intervals shorter than ¼ of the wavelength at the maximum frequency of the signal transmitted using the signal line. For this reason, even if the insulating layer and the wiring layer are made thin, by adjusting the width of the slit, a desired characteristic impedance can be obtained without narrowing the line width of the signal line. Further, since the connection line is provided, the ground layers located on both sides of the slit can be kept at the same potential. Furthermore, since the connection line is provided at an interval shorter than 1/4 of the wavelength at the maximum frequency of the signal transmitted using the signal line, resonance of the feedback current is prevented and the electromagnetic field radiated from the slit is suppressed. Thus, a shielding effect can be obtained. That is, even if the wiring board is formed thin, a desired characteristic impedance can be obtained and electromagnetic field radiation can be reduced.

また、接続線路の線路幅は、信号線路の線路幅よりも狭くされるので、帰還電流の経路差は少なくなり、接続線路を設けたことによるインピーダンスの不連続部分を無視できる程度に抑えることができる。   Also, since the line width of the connection line is narrower than the line width of the signal line, the path difference of the feedback current is reduced, and the impedance discontinuity due to the connection line can be suppressed to a negligible level. it can.

また、接続線路がメッシュ構造とされて、メッシュ開口部の周囲長は、信号線路を用いて伝送する信号の最大周波数における波長の１／２より短くされる。このため、接続線路に帰還電流が流れても各開口部での共振が防止されるので、電磁界放射を少なくできる。   Further, the connection line has a mesh structure, and the perimeter of the mesh opening is made shorter than ½ of the wavelength at the maximum frequency of the signal transmitted using the signal line. For this reason, even if a feedback current flows through the connection line, resonance at each opening is prevented, and electromagnetic field radiation can be reduced.

さらに、配線層上に絶縁層を設け、この絶縁層上に接地層を設けるものとし、この接地層には接続線路を設けたスリットが配線層に形成した信号線路と対向させて形成される。このため、マイクロストリップラインを構成する場合に限らずストリップラインを構成した場合にも適用できる。   Further, an insulating layer is provided on the wiring layer, and a ground layer is provided on the insulating layer. A slit provided with a connection line is formed on the ground layer so as to face a signal line formed in the wiring layer. Therefore, the present invention can be applied not only to the case of configuring a microstrip line but also to the case of configuring a strip line.

以下、図を参照しながら、この発明の実施の一形態について説明する。図１は、配線基板１０の平面図、図２は図１におけるI−I’位置の断面図である。   Hereinafter, an embodiment of the present invention will be described with reference to the drawings. 1 is a plan view of the wiring board 10, and FIG. 2 is a cross-sectional view taken along the line I-I 'in FIG.

配線基板１０は、絶縁層１１と、絶縁層１１の一方の面に形成された配線層１２と、絶縁層１１の他方の面に形成された接地層１３を有している。配線層１２には、信号線路１２ａを形成して、この信号線路１２ａと絶縁層１１および接地層１３でマイクロストリップラインを構成する。   The wiring board 10 includes an insulating layer 11, a wiring layer 12 formed on one surface of the insulating layer 11, and a ground layer 13 formed on the other surface of the insulating layer 11. A signal line 12 a is formed in the wiring layer 12, and the signal line 12 a, the insulating layer 11, and the ground layer 13 constitute a microstrip line.

ここで、配線基板１０としてフレキシブル基板を構成する場合、例えば絶縁層１１としてエポキシ系樹脂を用いるものとし、配線層１２や接地層１３として絶縁層１１の両面にＣＣＬ（Copper Clad Laminate）等の金属膜を形成する。さらに、配線層１２に設けた信号線路１２ａ等と他の信号線路や部品等を良好に接続するため、接続部分にＡｕメッキ処理やＮｉ／Ａｕメッキ処理等を必要に応じて施すものとする。   Here, when a flexible substrate is configured as the wiring substrate 10, for example, an epoxy resin is used as the insulating layer 11, and a metal such as CCL (Copper Clad Laminate) is formed on both surfaces of the insulating layer 11 as the wiring layer 12 and the ground layer 13. A film is formed. Furthermore, in order to satisfactorily connect the signal line 12a and the like provided in the wiring layer 12 to other signal lines and components, the connection portion is subjected to Au plating treatment, Ni / Au plating treatment, or the like as necessary.

マイクロストリップラインでは、信号線路１２ａの幅や厚さ、絶縁層１１の誘電率や厚さを調整して特性インピーダンスを調整する。また、接地層１３の信号線路１２ａと対向する位置にスリット２１を形成して、スリット２１の両側の接地層１３ａ，１３ｂと信号線路１２ａが同一層にないコプレーナウェーブガイドとすることで、信号線路１２ａに流れる信号電流に対する帰還電流の経路を同一にして帰還電流の損失を抑える。   In the microstrip line, the characteristic impedance is adjusted by adjusting the width and thickness of the signal line 12 a and the dielectric constant and thickness of the insulating layer 11. Further, a slit 21 is formed at a position of the ground layer 13 facing the signal line 12a, and the ground layers 13a, 13b on both sides of the slit 21 and the signal line 12a are formed as coplanar waveguides that are not in the same layer. The feedback current path for the signal current flowing through 12a is made the same to suppress the loss of the feedback current.

また、絶縁層１１や配線層１２が薄くされても、信号線路１２ａの線路幅を狭することなく所望の特性インピーダンスが得られるように、スリット２１の幅を制御することで特性インピーダンスの調整を行う。   Further, even if the insulating layer 11 and the wiring layer 12 are thinned, the characteristic impedance is adjusted by controlling the width of the slit 21 so that a desired characteristic impedance can be obtained without narrowing the line width of the signal line 12a. Do.

図３は、絶縁層１１の厚さとスリット２１の幅の関係を示している。ここで、図３Ａに示すように、絶縁層１１の厚さを「ｔa」、スリット２１のスリット幅ＧＰを「ＧＰa」として所望の特性インピーダンスとしたとき、図３Ｂに示すように絶縁層１１の厚さが「ｔb（＜ｔa）」とされたときには、スリット２１のスリット幅を「ＧＰb（＞ＧＰa）」として、特性インピーダンスを所望のインピーダンスとすることができる。   FIG. 3 shows the relationship between the thickness of the insulating layer 11 and the width of the slit 21. Here, as shown in FIG. 3A, when the thickness of the insulating layer 11 is “ta” and the slit width GP of the slit 21 is “GPa” to obtain a desired characteristic impedance, as shown in FIG. When the thickness is “tb (<ta)”, the slit width of the slit 21 can be set to “GPb (> GPa)”, and the characteristic impedance can be set to a desired impedance.

なお、信号線路１２ａを流れる信号電流に対して接地層１３を流れる帰還電流は、信号線路１２ａと対向する接地層１３ａ，１３ｂの部分、あるいは信号線路１２ａの線路幅Ｗよりもスリット２１の幅が広いときには、信号線路１２ａと平行する接地層１３ａ，１３ｂの信号線路側の端部で電流値が大きくなる。   The feedback current flowing through the ground layer 13 with respect to the signal current flowing through the signal line 12a is such that the width of the slit 21 is larger than the portion of the ground layers 13a and 13b facing the signal line 12a or the line width W of the signal line 12a. When it is wide, the current value increases at the signal line side end of the ground layers 13a and 13b parallel to the signal line 12a.

さらに、スリット２１には、スリット２１の両側の接地層１３ａ，１３ｂを接続する接続線路１３ｃを設ける。例えば図１に示すように、信号線路１２ａの線路方向に対して直交する方向に突出した接続線路１３ｃを設けて、接地層１３ａと接地層１３ｂを接続する。このように接続線路１３ｃを設けることにより、接地層１３ａと接地層１３ｂを同電位に保つことができる。   Further, the slit 21 is provided with a connection line 13 c that connects the ground layers 13 a and 13 b on both sides of the slit 21. For example, as shown in FIG. 1, a connection line 13c protruding in a direction orthogonal to the line direction of the signal line 12a is provided to connect the ground layer 13a and the ground layer 13b. By providing the connection line 13c in this way, the ground layer 13a and the ground layer 13b can be kept at the same potential.

接続線路１３ｃは、信号線路１２ａを用いて伝送する信号の最大周波数における波長を「λm」としたとき、このときの波長の１／４より短い間隔Ｌc（＜λm／４）で設けるものとする。このように、接続線路１３ｃを形成すると、接地層１３ａ，１３ｂに流れる帰還電流の共振が防止されるので、スリット２１から放射される電磁界が抑制されて、シールド効果を得ることができる。   The connection line 13c is provided at an interval Lc (<λm / 4) shorter than ¼ of the wavelength at this time when the wavelength at the maximum frequency of the signal transmitted using the signal line 12a is “λm”. . Thus, when the connection line 13c is formed, resonance of the feedback current flowing through the ground layers 13a and 13b is prevented, so that the electromagnetic field radiated from the slit 21 is suppressed and a shielding effect can be obtained.

また、スリット２１の幅だけでなく接続線路１３ｃの線路幅ＳＷを調整することで、インピーダンスをさらに精度良く調整できる。ところで、接続線路１３ｃの線路幅ＳＷを広くすると、例えば接続線路１３ｃ部分での容量が大きくなって特性に影響を与えてしまう。さらに、帰還電流の一部が接続線路１３ｃを流れて経路差を生じると伝送損失が大きくなってしまう。このため、特性に与える影響が少なく接続線路１３ｃに流れる帰還電流も少なくなるように、接続線路１３ｃの線路幅ＳＷを信号線路１２ａの線路幅Ｗ以下に設定する。このように、接続線路１３ｃの線路幅ＳＷを狭く設定すると、接地層１３ａ，１３ｂに流れる帰還電流は経路差が少なくなり、接続線路１３ｃを設けたことによるインピーダンスの不連続部分を無視できる程度に抑えることができる。   Further, by adjusting not only the width of the slit 21 but also the line width SW of the connection line 13c, the impedance can be adjusted with higher accuracy. By the way, if the line width SW of the connection line 13c is increased, for example, the capacitance at the connection line 13c increases and affects the characteristics. Furthermore, if a part of the feedback current flows through the connection line 13c to cause a path difference, transmission loss increases. For this reason, the line width SW of the connection line 13c is set to be equal to or smaller than the line width W of the signal line 12a so that the influence on the characteristics is small and the feedback current flowing through the connection line 13c is also small. Thus, when the line width SW of the connection line 13c is set narrow, the feedback current flowing through the ground layers 13a and 13b has a small path difference, and the discontinuity portion of the impedance due to the provision of the connection line 13c can be ignored. Can be suppressed.

ところで、上述の形態では、信号線路１２ａの方向に対して直交するように接続線路１３ｃを設ける場合を示したが、メッシュ状の接続線路１３ｄを設けて、接地層１３ａ，１３ｂを接続することもできる。   By the way, although the case where the connection line 13c is provided so as to be orthogonal to the direction of the signal line 12a has been described in the above embodiment, the ground layers 13a and 13b may be connected by providing a mesh-like connection line 13d. it can.

図４は、メッシュ状の接続線路１３ｄを設けた配線基板１０ｂの平面図、図５は図４におけるII−II’位置の断面図である。メッシュ状の接続線路１３ｄは、帰還電流の経路長が等しくなるように形成する。例えば、信号線路１２ａの破線で示す中心軸ＣＬに対して対象な形状となるように接続線路１３ｄを形成すれば、帰還電流の経路長を等しくできる。   4 is a plan view of the wiring board 10b provided with the mesh-like connection line 13d, and FIG. 5 is a cross-sectional view taken along the line II-II 'in FIG. The mesh-shaped connection line 13d is formed so that the path lengths of the feedback currents are equal. For example, if the connection line 13d is formed so as to have a target shape with respect to the central axis CL indicated by the broken line of the signal line 12a, the path length of the feedback current can be made equal.

また、接続線路１３ｄにおける開口部の接地層１３ａ側の周囲長ＬＰaと接地層１３ｂ側の周囲長ＬＰbは、λm／４より短く設定する。また、信号線路１２ａの破線で示す中心軸ＣＬに対して対象となるように接続線路１３ｄを形成したときには、接続線路１３ｄにおける開口部全体の周囲長ＬＰ（＝ＬＰa＋ＬＰb：ＬＰaは中心軸ＣＬに対して接地層１３ａ側の周囲長、ＬＰbは中心軸ＣＬに対して接地層１３ｂ側の周囲長を示す）をλm／２より短く設定すれば、接地層１３ａ側の周囲長ＬＰaと接地層１３ｂ側の周囲長ＬＰbは、λm／４より短くなる。   In addition, the peripheral length LPa on the ground layer 13a side and the peripheral length LPb on the ground layer 13b side of the opening of the connection line 13d are set to be shorter than λm / 4. Further, when the connection line 13d is formed so as to be targeted with respect to the central axis CL indicated by the broken line of the signal line 12a, the peripheral length LP (= LPa + LPb: LPa of the entire opening in the connection line 13d is relative to the central axis CL. If the peripheral length on the ground layer 13a side, LPb indicates the peripheral length on the ground layer 13b side with respect to the central axis CL) is set shorter than λm / 2, the peripheral length LPa on the ground layer 13a side and the ground layer 13b side The peripheral length LPb is shorter than λm / 4.

このように、開口部の接地層１３ａ側の周囲長ＬＰaと接地層１３ｂ側の周囲長ＬＰbをそれぞれλm／４より短く設定すれば、接続線路１３ｄに帰還電流が流れても各開口部での共振が防止される。また、スリット２１において接続線路が占める割合も多くなるので、接続線路１３ｃを設けた場合よりもスリット２１から放射される電磁界がさらに抑制されて、シールド効果を高めることができる。   Thus, if the peripheral length LPa on the ground layer 13a side and the peripheral length LPb on the ground layer 13b side of the opening are set to be shorter than λm / 4, respectively, even if a feedback current flows through the connection line 13d, Resonance is prevented. Moreover, since the ratio which a connection line accounts in the slit 21 increases, the electromagnetic field radiated | emitted from the slit 21 is further suppressed rather than the case where the connection line 13c is provided, and a shield effect can be heightened.

ところで、上述の形態では、マイクロストリップラインを構成した場合について説明したが、ストリップラインを構成した場合にも適用できる。図６は、ストリップライン構造の伝送路を構成した配線基板の断面図を示している。   By the way, although the above-mentioned form demonstrated the case where a microstrip line was comprised, it is applicable also when a stripline is comprised. FIG. 6 shows a cross-sectional view of a wiring board constituting a transmission line having a stripline structure.

絶縁層１１の一方の面に形成された配線層１２上には、エポキシ系樹脂等で絶縁層１４を形成する。さらに絶縁層１４上にＣＣＬ等で接地層１５を形成する。接地層１５には、接地層１３と同様にスリット２２を形成して、スリット２２に接続線路１５cあるいはメッシュ状の接続線路１５dを設ける。また、スリット２１，２２のスリット幅ＧＰを信号線路１２ａの線路幅Ｗよりも広くして所望の特性インピーダンスを得るようにすれば、ストリップライン構造を用いても信号線路の線路幅が狭くなって損失が増加してしまうことを防止して、インピーダンスを制御できる。   On the wiring layer 12 formed on one surface of the insulating layer 11, an insulating layer 14 is formed with an epoxy resin or the like. Further, the ground layer 15 is formed on the insulating layer 14 by CCL or the like. A slit 22 is formed in the ground layer 15 similarly to the ground layer 13, and a connection line 15 c or a mesh-like connection line 15 d is provided in the slit 22. Further, if the slit width GP of the slits 21 and 22 is made wider than the line width W of the signal line 12a so as to obtain a desired characteristic impedance, the line width of the signal line is reduced even if the stripline structure is used. Impedance can be controlled by preventing loss from increasing.

図７は実施例１の平面図、図８は図７におけるIII−III’位置の断面図を示している。配線基板３０の絶縁層３１の一方の面には配線層３２を設け、他方の面には接地層３３を設ける。配線層３２上には、配線層３２の保護や配線基板３０が所望の強度を有するように絶縁層３４を設ける。また接地層３３上には、接地層３３の保護や配線基板３０が所望の強度を有するように絶縁層３５を設ける。   FIG. 7 is a plan view of the first embodiment, and FIG. 8 is a cross-sectional view taken along the line III-III 'in FIG. A wiring layer 32 is provided on one surface of the insulating layer 31 of the wiring substrate 30, and a ground layer 33 is provided on the other surface. An insulating layer 34 is provided on the wiring layer 32 so that the wiring layer 32 is protected and the wiring substrate 30 has a desired strength. An insulating layer 35 is provided on the ground layer 33 so that the ground layer 33 is protected and the wiring board 30 has a desired strength.

絶縁層３１の層厚ｔ31は２５μｍ、絶縁層３４の層厚ｔ34と絶縁層３５の層厚ｔ35は２０μｍとする。また絶縁層３１，３４，３５の比誘電率は３．３、ｔａｎδは０．０２である。配線層３２と接地層３３は銅を用いて構成し、配線層３２の層厚ｔ32と接地層３３層厚ｔ33は１８μｍとする。   The layer thickness t31 of the insulating layer 31 is 25 μm, and the layer thickness t34 of the insulating layer 34 and the layer thickness t35 of the insulating layer 35 are 20 μm. The dielectric layers 31, 34, and 35 have a relative dielectric constant of 3.3 and tan δ is 0.02. The wiring layer 32 and the ground layer 33 are formed using copper, and the layer thickness t32 and the ground layer 33 layer thickness t33 of the wiring layer 32 are 18 μm.

配線層３２に形成した信号線路３２ａの線路幅Ｗは１００μｍとし、信号線路３２ａと対向するように接地層３３に形成したスリット４１のスリット幅ＧＰは１３４μｍとする。スリット４１には、線路幅ＳＷを７０μｍとした接続線路３３ｃを、間隔Ｌc＝５ｍｍとして複数形成する。   The line width W of the signal line 32a formed in the wiring layer 32 is 100 μm, and the slit width GP of the slit 41 formed in the ground layer 33 so as to face the signal line 32a is 134 μm. In the slit 41, a plurality of connection lines 33c having a line width SW of 70 μm are formed with an interval Lc = 5 mm.

このように形成した配線基板３０は、図９に示す透過特性（実線で示す）と反射特性（破線で示す）となり、損失が少なく反射レベルも小さい特性を有している。図１０は、ＴＤＲ（Time Domain Reflectometry）特性を示しており、時間が経過してもインピーダンスが略一定でインピーダンス不整合部分が現れていないことから、接続線路３３ｃを設けたことによる特性インピーダンスへの影響を無視できる。図１１は、スミスチャートを用いてインピーダンスの周波数特性を示したものであり、周波数を５０ＭＨｚから２０．０５ＧＨｚまで可変してもインピーダンス特性は略５０Ωになっている。このため、入力する高周波信号の周波数に応じて特性インピーダンスが大きく変化してしまうことのない高周波信号の伝送に適した配線基板を形成できる。   The wiring board 30 formed in this way has the transmission characteristics (shown by solid lines) and the reflection characteristics (shown by broken lines) shown in FIG. 9, and has the characteristics of low loss and low reflection level. FIG. 10 shows a TDR (Time Domain Reflectometry) characteristic. Since the impedance is substantially constant and no impedance mismatching portion appears even after a lapse of time, the characteristic impedance due to the provision of the connection line 33c is shown. The influence can be ignored. FIG. 11 shows impedance frequency characteristics using a Smith chart. The impedance characteristics are approximately 50Ω even if the frequency is varied from 50 MHz to 20.05 GHz. For this reason, it is possible to form a wiring board suitable for transmission of a high-frequency signal in which the characteristic impedance does not change greatly according to the frequency of the input high-frequency signal.

以上のように、本発明に係る配線基板は、高周波信号を用いる場合に有用であり、配線基板をフレキシブル基板として形成する際に適している。   As described above, the wiring board according to the present invention is useful when a high-frequency signal is used, and is suitable when the wiring board is formed as a flexible board.

配線基板の平面図である。It is a top view of a wiring board. I−I’位置の断面図である。It is sectional drawing of an I-I 'position. 絶縁層の厚さとスリットの幅の関係を示す図である。It is a figure which shows the relationship between the thickness of an insulating layer, and the width | variety of a slit. 接続線路をメッシュ状に構成した場合を示す図である。It is a figure which shows the case where a connection line is comprised in mesh shape. II−II’位置の断面図である。It is sectional drawing of a II-II 'position. ストリップライン構造の伝送路を構成した配線基板の断面図である。It is sectional drawing of the wiring board which comprised the transmission line of the stripline structure. 実施例１の平面図である。1 is a plan view of Example 1. FIG. III−III’位置の断面図である。It is sectional drawing of a III-III 'position. 透過特性と反射特性を示す図である。It is a figure which shows a transmission characteristic and a reflection characteristic. ＴＤＲ特性を示す図である。It is a figure which shows a TDR characteristic. インピーダンスの周波数特性を示すスミスチャートである。It is a Smith chart which shows the frequency characteristic of an impedance. 接地層をメッシュ構造としたときの帰還電流を示す図である。It is a figure which shows the feedback current when a grounding layer is made into a mesh structure. 接地層にスリットを形成した場合を示す図である。It is a figure which shows the case where a slit is formed in the grounding layer.

符号の説明Explanation of symbols

１０，１０ｂ，３０・・・配線基板、１１，１４，３１，３４，３５，６２・・・絶縁層、１２，３２・・・配線層、１２ａ，３２ａ，５１ａ，６１ａ・・・信号線路、１３，１３ａ，１３ｂ，１５，３３，５３，６３・・・接地層、１３ｃ，１３ｄ，１５ｃ，１５ｄ，３３ｃ・・・接続線路、２１，２２，４１，７１・・・スリット
10, 10b, 30 ... wiring board, 11, 14, 31, 34, 35, 62 ... insulating layer, 12, 32 ... wiring layer, 12a, 32a, 51a, 61a ... signal line, 13, 13a, 13b, 15, 33, 53, 63 ... ground layer, 13c, 13d, 15c, 15d, 33c ... connection line, 21, 22, 41, 71 ... slit

Claims (4)

絶縁層の一方の面に配線層を設け、他方の面に接地層を設けるものとし、
前記配線層に形成した信号線路と対向させて前記接地層にスリットを形成し、
前記スリットには、前記信号線路を用いて伝送する信号の最大周波数における波長の１／４より短い間隔で、前記スリットの両側の接地層を接続する接続線路を設けた
ことを特徴とする配線基板。 A wiring layer is provided on one surface of the insulating layer, and a ground layer is provided on the other surface.
Form a slit in the ground layer facing the signal line formed in the wiring layer,
The wiring board characterized in that the slit is provided with a connection line that connects the ground layers on both sides of the slit at intervals shorter than ¼ of the wavelength at the maximum frequency of the signal transmitted using the signal line. . 前記接続線路の線路幅は、前記信号線路の線路幅よりも狭くした
ことを特徴とする請求項１記載の配線基板。 The wiring board according to claim 1, wherein a line width of the connection line is narrower than a line width of the signal line. 前記接続線路をメッシュ構造として設けるものとし、メッシュ開口部の周囲長は、前記信号線路を用いて伝送する信号の最大周波数における波長の１／２より短くした
ことを特徴とする請求項１記載の配線基板。 2. The connection line according to claim 1, wherein the connection line is provided as a mesh structure, and the perimeter of the mesh opening is shorter than ½ of the wavelength at the maximum frequency of the signal transmitted using the signal line. Wiring board. 前記配線層上に絶縁層を設け、該絶縁層上に接地層を設けて、該接地層に前記接続線路を設けたスリットを前記配線層に形成した信号線路と対向させて形成する
ことを特徴とする請求項１記載の配線基板。
An insulating layer is provided on the wiring layer, a ground layer is provided on the insulating layer, and a slit in which the connection line is provided in the ground layer is formed to face a signal line formed in the wiring layer. The wiring board according to claim 1.
JP2004346888A 2004-11-30 2004-11-30 Wiring board Pending JP2006157646A (en)

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