JP2006156683A - Support plate adhering method - Google Patents
Support plate adhering method Download PDFInfo
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- JP2006156683A JP2006156683A JP2004344737A JP2004344737A JP2006156683A JP 2006156683 A JP2006156683 A JP 2006156683A JP 2004344737 A JP2004344737 A JP 2004344737A JP 2004344737 A JP2004344737 A JP 2004344737A JP 2006156683 A JP2006156683 A JP 2006156683A
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- support plate
- pressure
- substrate
- semiconductor wafer
- plate
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000012790 adhesive layer Substances 0.000 claims abstract description 23
- 239000000853 adhesive Substances 0.000 claims abstract description 19
- 230000001070 adhesive effect Effects 0.000 claims abstract description 18
- 239000010410 layer Substances 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000012298 atmosphere Substances 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 239000007767 bonding agent Substances 0.000 abstract 1
- 239000002904 solvent Substances 0.000 description 26
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 13
- 230000001681 protective effect Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 5
- 230000006837 decompression Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
Description
本発明は、半導体ウェーハ等の基板を薄板化する際にバックアップのために基板にサポートプレートを貼り付ける方法に関する。 The present invention relates to a method of attaching a support plate to a substrate for backup when a substrate such as a semiconductor wafer is thinned.
ＩＣカードや携帯電話の薄型化、小型化、軽量化が要求されており、この要求を満たすためには組み込まれる半導体チップについても薄厚の半導体チップとしなければならない。このため半導体チップの基になるウェーハの厚さは現状では１２５μｍ〜１５０μｍであるが、次世代のチップ用には２５μｍ〜５０μｍにしなければならないと言われている。 IC cards and mobile phones are required to be thinner, smaller, and lighter. In order to satisfy these demands, a semiconductor chip to be incorporated must be a thin semiconductor chip. Therefore, the thickness of the wafer on which the semiconductor chip is based is currently 125 μm to 150 μm, but it is said that it must be 25 μm to 50 μm for the next generation chip.
半導体ウェーハの薄板化には従来から図４に示す工程を経ている。即ち、半導体ウェーハの回路（素子）形成面（Ａ面）に保護テープを貼り付け、これを反転して半導体ウェーハの裏面（Ｂ面）をグラインダーで研削して薄板化し、この薄板化した半導体ウェーハの裏面をダイシングフレームに保持されているダイシングテープ上に固定し、この状態で半導体ウェーハの回路（素子）形成面（Ａ面）を覆っている保護テープを剥離し、この後ダイシング装置によって各チップ毎に切り離すようにしている。 Conventionally, the process shown in FIG. That is, a protective tape is attached to the circuit (element) forming surface (A surface) of the semiconductor wafer, and this is reversed, and the back surface (B surface) of the semiconductor wafer is ground and thinned by a grinder. The back surface of the semiconductor wafer is fixed on a dicing tape held by a dicing frame, and in this state, the protective tape covering the circuit (element) formation surface (A surface) of the semiconductor wafer is peeled off, and then each chip is separated by a dicing apparatus. I try to detach it every time.
上記した方法は特許文献１に開示されている。尚、特許文献１にあっては、保護テープとして耐熱性保護テープを用い、剥離する際にはこの保護テープの一端に強粘着テープを粘着して薄板化した半導体ウェーハから引き剥がすようにしている。 The method described above is disclosed in Patent Document 1. In Patent Document 1, a heat-resistant protective tape is used as a protective tape, and when peeling, a strong adhesive tape is adhered to one end of the protective tape and peeled off from a thinned semiconductor wafer. .
また特許文献２には、保護テープの代わりに窒化アルミニウム−窒化硼素気孔焼結体にラダー型シリコーンオリゴマーを含浸せしめた保護基板を用い、この保護基板と半導体ウェーハとを熱可塑性フィルムを用いて接着する内容が開示されている。 In Patent Document 2, a protective substrate in which a ladder type silicone oligomer is impregnated into an aluminum nitride-boron nitride pore sintered body is used instead of the protective tape, and the protective substrate and the semiconductor wafer are bonded using a thermoplastic film. The contents to be disclosed are disclosed.
また特許文献３には、保護基板として半導体ウェーハと実質的に同一の熱膨張率のアルミナ、窒化アルミニウム、窒化硼素、炭化珪素などの材料を用い、また保護基板と半導体ウェーハとを接着する接着剤としてポリイミドなどの熱可塑性樹脂を用い、この接着剤の適用法として、１０〜１００μｍの厚さのフィルムとする方法或いは接着剤樹脂溶液をスピンコートし、乾燥させて２０μｍ以下のフィルムにする方法が提案されている。 Further, Patent Document 3 uses a material such as alumina, aluminum nitride, boron nitride, or silicon carbide having a thermal expansion coefficient substantially the same as that of a semiconductor wafer as a protective substrate, and an adhesive that bonds the protective substrate and the semiconductor wafer. As a method of applying this adhesive, a method of forming a film having a thickness of 10 to 100 μm or a method of spin-coating an adhesive resin solution and drying to form a film of 20 μm or less is used. Proposed.
上記の一連の工程のうち、半導体ウェーハをグラインダーなどによって薄板化する工程では、半導体ウェーハの回路形成面側をテープや板材でサポートする必要がある。特許文献４には、半導体ウェーハにサポートプレートを貼り付ける内容が開示されている。 Of the series of steps described above, in the step of thinning the semiconductor wafer with a grinder or the like, it is necessary to support the circuit forming surface side of the semiconductor wafer with a tape or a plate material. Patent Document 4 discloses the content of attaching a support plate to a semiconductor wafer.
特許文献４に開示される内容は、上下一対のホットプレートを配置するとともに、これらホットプレートの外側に上下一対の真空ポットを設け、上下のホットプレート間で半導体ウェーハとサポートプレートとの積層体を圧着する間、減圧雰囲気で行うようにしている。特に、特許文献１では上方のホットプレートを昇降動せしめる手段として油圧式のプレス機を用いず、ダンパーとしても機能するエアプランジャーを用いることで、ホットプレートからの熱で積層体が膨張した際に発生する逆圧力で半導体ウェーハが破損することを防止している。 The content disclosed in Patent Document 4 includes a pair of upper and lower hot plates, a pair of upper and lower vacuum pots provided outside the hot plates, and a laminated body of a semiconductor wafer and a support plate between the upper and lower hot plates. During the pressure bonding, the pressure is reduced. In particular, in Patent Document 1, when the laminate is expanded by the heat from the hot plate by using an air plunger that also functions as a damper without using a hydraulic press machine as a means for moving the upper hot plate up and down. The semiconductor wafer is prevented from being damaged by the reverse pressure generated in the process.
上述した従来の貼り合わせ方法では、接着剤中の溶剤が完全に揮発せずにボイドが発生することがある。このボイドが発生すると半導体ウェーハとサポートプレートとの積層体の厚みが部分的に不均一になり、グラインダーで基板を削る際に基板の厚みが不均一になる。 In the conventional laminating method described above, the solvent in the adhesive may not completely evaporate and voids may occur. When this void occurs, the thickness of the laminated body of the semiconductor wafer and the support plate becomes partially non-uniform, and the thickness of the substrate becomes non-uniform when the substrate is shaved with a grinder.
特に特許文献４では、貼り合せを減圧且つ加熱下で行うことが開示されているが、それでも完全にボイドの発生を防ぐことができない。 In particular, Patent Document 4 discloses that bonding is performed under reduced pressure and heating, but it is still impossible to completely prevent the generation of voids.
上記課題を解決すべく本発明に係る貼り付け方法は、半導体ウェーハ等の基板の回路形成面に接着剤を塗布して回路形成面の上に接着剤層を形成し、次いでこの接着剤層を加熱して乾燥固化せしめ、この後、前記接着剤層の上に厚み方向の貫通孔をプレートの全域に亘って設けたサポートプレートを重ね、この状態で減圧雰囲気且つ加熱下においてサポートプレートを接着剤層に押し付けて圧着するようにした。 In order to solve the above problems, the bonding method according to the present invention is to apply an adhesive on a circuit forming surface of a substrate such as a semiconductor wafer to form an adhesive layer on the circuit forming surface, and then apply the adhesive layer to the circuit forming surface. After heating to dry and solidify, a support plate provided with through-holes in the thickness direction over the entire area of the adhesive layer is overlaid on the adhesive layer, and in this state, the support plate is bonded to the adhesive plate under reduced pressure and heating. It was pressed against the layer and crimped.
このように、サポートプレートを圧着する前に接着剤層を加熱して乾燥固化せしめることでボイドの発生を有効に阻止できる。また、圧着の際に加熱することで一旦乾燥した接着剤層が柔らかくなり基板とサポートプレートとを接着することができ、更にサポートプレートとして多孔板を用いることで圧着の際に孔を介して接着剤中の溶剤を揮発せしめることができ、ボイドの原因を除去できる。 In this way, the generation of voids can be effectively prevented by heating the adhesive layer to dry and solidify before pressing the support plate. In addition, the adhesive layer once dried can be softened by heating at the time of pressure bonding, and the substrate and the support plate can be bonded. Further, by using a perforated plate as the support plate, bonding can be performed through the holes at the time of pressure bonding. The solvent in the agent can be volatilized and the cause of voids can be removed.
前記基板とサポートプレートとの圧着は、保持台と押圧板との間で基板とサポートプレートとの積層体を加圧することで行い、更に前記押圧板をサーボモータを駆動することで昇降動せしめる構成とすれば、トルク（圧力）制御または位置制御することで積層体に加わる圧力を調整することが可能になり、基板の厚み変更などに容易に対処できる。 The pressure bonding between the substrate and the support plate is performed by pressing the laminated body of the substrate and the support plate between the holding base and the pressing plate, and the pressing plate is moved up and down by driving a servo motor. Then, it is possible to adjust the pressure applied to the laminated body by torque (pressure) control or position control, and it is possible to easily cope with a change in the thickness of the substrate.
ここで、基板の回路形成面に塗布した接着剤の乾燥は２５０℃以下の温度で行うことが好ましい。高温で乾燥せしめると、表面のみが乾燥し中が乾燥していない状態になり、後にボイドの原因となる。また減圧雰囲気における積層体の加熱温度は２００℃以下とすることが好ましい。高温で圧着するとやはりボイドが生じやすい。 Here, it is preferable to dry the adhesive applied to the circuit forming surface of the substrate at a temperature of 250 ° C. or lower. When it is dried at a high temperature, only the surface is dried and the inside is not dried, which causes voids later. The heating temperature of the laminate in a reduced pressure atmosphere is preferably 200 ° C. or lower. If pressure bonding is performed at a high temperature, voids are likely to occur.
本発明によれば、半導体ウェーハ等の基板とサポートプレートを圧着せしめる際に、ボイド及びガスの発生を抑制でき、基板とサポートプレートとの貼り付け精度も向上する。
また、積層体の厚みも均一になるので、従来よりも基板を更に薄厚化することができる。
According to the present invention, when a substrate such as a semiconductor wafer is bonded to a support plate, the generation of voids and gas can be suppressed, and the bonding accuracy between the substrate and the support plate is improved.
Moreover, since the thickness of the laminated body is also uniform, the substrate can be made thinner than before.
以下に本発明の実施の形態を添付図面に基づいて説明する。図１は本発明に係る貼り付け方法を組み込んだ半導体ウェーハの薄板化工程を説明した図、図２は本発明に係る方法の実施に用いる半導体ウェーハの貼り付け装置の全体断面図、図３は剥離用の溶剤供給について説明した図であり、最初に薄板化工程の全体を説明する。 Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a diagram illustrating a thinning process of a semiconductor wafer incorporating a bonding method according to the present invention, FIG. 2 is an overall sectional view of a semiconductor wafer bonding apparatus used for carrying out the method according to the present invention, and FIG. It is a figure explaining the solvent supply for peeling, and demonstrates the whole thin plate process first.
先ず図１（ａ）に示すように、半導体ウェーハＷの回路（素子）形成面（Ａ面）に接着剤液を塗布する。塗布には例えばスピンナーを用いる。接着剤液としてはアクリル樹脂またはノボラックタイプのフェノール樹脂系材料が挙げられるが、これに限定されない。また接着剤の厚みは数μｍ〜１００μｍ程度とする。 First, as shown in FIG. 1A, an adhesive liquid is applied to a circuit (element) forming surface (A surface) of a semiconductor wafer W. For example, a spinner is used for coating. Examples of the adhesive liquid include, but are not limited to, an acrylic resin or a novolac type phenol resin material. The thickness of the adhesive is about several μm to 100 μm.
次いで、図１（ｂ）に示すように、上記の接着剤をベークして焼き固めて流動性をなくした接着剤層１を基板Ｗの表面に形成する。加熱には例えばオーブンを用いる。接着剤層１の厚みは上記に限らず、半導体ウェーハＷの表面（Ａ面）に形成した回路の凹凸に応じて決定する。尚、一回の塗布では必要な厚みを出せない場合には、塗布と予備乾燥を複数回繰り返して行う。この場合、最上層以外の接着剤層の予備乾燥は接着剤に流動性を残さないように乾燥の度合いを強める。 Next, as shown in FIG. 1B, the adhesive layer 1 having the fluidity lost is formed on the surface of the substrate W by baking and solidifying the above adhesive. For example, an oven is used for heating. The thickness of the adhesive layer 1 is not limited to the above, but is determined according to the unevenness of the circuit formed on the surface (A surface) of the semiconductor wafer W. If the required thickness cannot be obtained by a single application, the application and preliminary drying are repeated a plurality of times. In this case, preliminary drying of the adhesive layers other than the uppermost layer increases the degree of drying so as not to leave fluidity in the adhesive.
以上によって所定厚みの接着剤層１が形成された半導体ウェーハＷに、本発明に係る貼り付け方法によってサポートプレート２を貼り付ける。貼り付け装置の詳細は後述する。サポートプレート２は例えば厚み方向の貫通孔３を全域に形成したガラス板（厚み１．０ｍｍ、外径２０１．０ｍｍ）とする。尚、サポートプレート２の材質はこれに限定されない。 The support plate 2 is bonded to the semiconductor wafer W on which the adhesive layer 1 having a predetermined thickness is formed by the above-described bonding method according to the present invention. Details of the pasting apparatus will be described later. The support plate 2 is, for example, a glass plate (thickness 1.0 mm, outer diameter 201.0 mm) having through holes 3 in the thickness direction formed throughout. The material of the support plate 2 is not limited to this.
この後、一体化した半導体ウェーハＷとサポートプレート２からなる積層体を反転し、半導体ウェーハＷの裏面（Ｂ面）をグラインダー４で研削し、半導体ウェーハＷを薄板化する。尚、研削にあたってはグラインダー４と半導体ウェーハＷとの間に生じる摩擦熱を抑えるために水（研削液）を半導体ウェーハＷの裏面に供給しつつ行う。ここで、前記接着剤は水に不溶（アルコールに可溶）なものを選定しているため、研削の際に半導体ウェーハＷからサポートプレート２が剥がれることがない。 Thereafter, the laminated body composed of the integrated semiconductor wafer W and the support plate 2 is inverted, and the back surface (B surface) of the semiconductor wafer W is ground by the grinder 4 to thin the semiconductor wafer W. The grinding is performed while supplying water (grinding fluid) to the back surface of the semiconductor wafer W in order to suppress frictional heat generated between the grinder 4 and the semiconductor wafer W. Here, since the adhesive is selected from those insoluble in water (soluble in alcohol), the support plate 2 is not peeled off from the semiconductor wafer W during grinding.
上記薄板化した半導体ウェーハＷの裏面（Ｂ面）に必要に応じて回路などを形成した後、当該裏面をダイシングテープ５上に固定する。このダイシングテープ５は粘着性を有するとともにフレーム６に保持されている。 After a circuit or the like is formed on the back surface (B surface) of the thinned semiconductor wafer W as necessary, the back surface is fixed on the dicing tape 5. The dicing tape 5 has adhesiveness and is held by the frame 6.
この後、サポートプレート２の上から溶剤としてアルコールを注ぐ。アルコールはサポートプレート２の貫通孔３を介して接着剤層１に到達し接着剤層１を溶解する。この場合、フレーム６を図示しないスピンナーにて回転せしめることで、アルコールを短時間のうちに接着剤層１の全面に行き渡らせることができる。用いるアルコールとしてはエタノールやメタノールなどの分子量が小さいものほど溶解性が高いので好ましい。また複数のアルコールを混合してもよい。またアルコールの代わりにケトンまたはアルコールとケトンとの混合溶液を用いてもよい。 Thereafter, alcohol is poured from above the support plate 2 as a solvent. Alcohol reaches the adhesive layer 1 through the through holes 3 of the support plate 2 and dissolves the adhesive layer 1. In this case, the alcohol can be spread over the entire surface of the adhesive layer 1 in a short time by rotating the frame 6 with a spinner (not shown). As the alcohol to be used, a lower molecular weight such as ethanol or methanol is preferable because of its higher solubility. A plurality of alcohols may be mixed. Further, instead of alcohol, a ketone or a mixed solution of alcohol and ketone may be used.
アルコールなどを接着剤層１に供給する手段としては、溶剤を満たした槽にサポートプレート２が接着された半導体ウェーハＷを浸漬してもよい、この場合超音波振動を加えれば更に効果的である。 As means for supplying alcohol or the like to the adhesive layer 1, the semiconductor wafer W with the support plate 2 bonded thereto may be immersed in a tank filled with a solvent. In this case, it is more effective if ultrasonic vibration is applied. .
以上の如くして接着剤層１を溶解せしめたならば、サポートプレート２上の余分な溶剤を除去した後、治具を用いてサポートプレート２を基板Ｗの周辺部から徐々に剥離する。 When the adhesive layer 1 is dissolved as described above, the excess solvent on the support plate 2 is removed, and then the support plate 2 is gradually peeled off from the peripheral portion of the substrate W using a jig.
そして、サポートプレート２を剥離した後、ダイシングカッター７によって半導体ウェーハＷをチップサイズに切断する。切断後は、ダイシングテープ５に紫外線を照射し、ダイシングテープ５の粘着力を低下せしめて、切断したチップを個々に取り出す。 Then, after the support plate 2 is peeled off, the semiconductor wafer W is cut into chips by the dicing cutter 7. After cutting, the dicing tape 5 is irradiated with ultraviolet rays, the adhesive strength of the dicing tape 5 is reduced, and the cut chips are individually taken out.
次に、本発明に係る貼り付け方法の実施に利用する貼り付け装置について図２に基づいて説明する。貼り付け装置１０は減圧チャンバー１１を備えている。この減圧チャンバー１１は配管１２を介して真空引き装置につながり、また一側面には搬入・搬出用の開口１３が形成され、この開口１３をシャッター１４で開閉するようにしている。 Next, a pasting apparatus used for carrying out the pasting method according to the present invention will be described with reference to FIG. The affixing device 10 includes a decompression chamber 11. The decompression chamber 11 is connected to a vacuuming device via a pipe 12, and an opening 13 for carrying in / out is formed on one side surface, and the opening 13 is opened and closed by a shutter 14.
シャッター１４はシリンダユニット１５にて昇降動せしめられ、上昇した位置で側方からプッシャー１６にて押圧することで、シャッター１４の内側面に設けたシールが開口１３の周囲に密に当接し、チャンバー１１内を気密に維持する。またプッシャー１６を後退させシャッター１４を下降させることで、開口１３が開となり、この状態で搬送装置を用いてウェーハＷとサポートプレート２との積層体を出し入れする。 The shutter 14 is moved up and down by the cylinder unit 15 and pressed by the pusher 16 from the side at the raised position, so that the seal provided on the inner surface of the shutter 14 comes into close contact with the periphery of the opening 13, and the chamber 11 is kept airtight. Further, the pusher 16 is retracted and the shutter 14 is lowered, so that the opening 13 is opened. In this state, the stacked body of the wafer W and the support plate 2 is taken in and out using the transfer device.
前記チャンバー１１内には前記積層体を圧着する保持台１７と押圧板１８が配置されている。保持台１７は炭化珪素（ＳｉＣ）からなり押圧板１８はアルミナ（Ａｌ２Ｏ３）からなる。尚、セラミックス焼結体にて押圧板を構成し、このセラミックス焼結体に排気管を接続する構成も考えられるが、この構成にすると十分に接着剤中のガスが抜けないおそれがある。 In the chamber 11, a holding base 17 and a pressing plate 18 are disposed for pressure-bonding the laminated body. The holding stand 17 is made of silicon carbide (SiC), and the pressing plate 18 is made of alumina (Al 2 O 3 ). In addition, although the structure which comprises a press board with a ceramic sintered compact and connects an exhaust pipe to this ceramic sintered compact is also considered, there exists a possibility that the gas in an adhesive agent may not fully escape if this structure is used.
前記保持台１７には貫通孔１９が形成され、この貫通孔１９に昇降ピン２０が挿通している。この昇降ピン２０はチャンバー１１の下方に設けられたシリンダユニット２１で昇降動するプレート２２に取り付けられている。 A through hole 19 is formed in the holding base 17, and a lift pin 20 is inserted into the through hole 19. The elevating pins 20 are attached to a plate 22 that moves up and down by a cylinder unit 21 provided below the chamber 11.
また、前記保持台１７にはヒータ２３が埋設され、このヒータ２３によって前記積層体を２００℃程度まで加熱し、一旦硬化した接着剤を柔らかくする。尚ヒータは押圧板１８側に設けてもよい。 In addition, a heater 23 is embedded in the holding table 17, and the laminated body is heated to about 200 ° C. by the heater 23 to soften the adhesive once cured. The heater may be provided on the pressing plate 18 side.
一方、前記押圧板１８はバックプレート２４に保持され、このバックプレート２４はチャンバー１１を貫通する軸２５の下端に取り付けられている。この軸２５の中間部にはフランジ２６が設けられ、このフランジ２６とチャンバー１１上面との間に蛇腹２７が取り付けられ、チャンバー１１内の気密状態を維持している。 On the other hand, the pressing plate 18 is held by a back plate 24, and the back plate 24 is attached to the lower end of a shaft 25 that penetrates the chamber 11. A flange 26 is provided at an intermediate portion of the shaft 25, and a bellows 27 is attached between the flange 26 and the upper surface of the chamber 11 to maintain an airtight state in the chamber 11.
また前記チャンバー１１からは上方にフレーム２８が伸び、このフレーム２８にサーボモータ２９が支持され、このサーボモータ２９によって回転せしめられるスクリューネジ３０に昇降体３１のナット部３２が螺合し、この昇降体３１にボールジョイント３３を介して前記軸２５の上端部が支持されている。更に、軸２５の側方には軸２５の上下位置を検出するセンサ３４を配置している。 A frame 28 extends upward from the chamber 11, a servo motor 29 is supported on the frame 28, and a nut portion 32 of the elevating body 31 is screwed into a screw screw 30 rotated by the servo motor 29, and the elevating and lowering is performed. An upper end portion of the shaft 25 is supported on the body 31 via a ball joint 33. Further, a sensor 34 for detecting the vertical position of the shaft 25 is disposed on the side of the shaft 25.
以上において半導体ウェーハＷとサポートプレート２の積層体を圧着するには、
先ず押圧板１８の平行度の調整を行う。平行度を出すには、ボールジョイント３３のボルトを緩めボールジョイント３３をフリーの状態にする。そして、この状態のまま押圧板１８を自重で下降せしめ、押圧板１８の下面を保持台１７の上面に当接させる。この時点で保持台１７と押圧板１８とは平行になる。次いで、ボルトを締め付けボールジョイント３３を固定した後、押圧板１８を上昇せしめる。
In order to crimp the laminated body of the semiconductor wafer W and the support plate 2 in the above,
First, the parallelism of the pressing plate 18 is adjusted. In order to obtain parallelism, the bolts of the ball joint 33 are loosened so that the ball joint 33 is in a free state. In this state, the pressing plate 18 is lowered by its own weight, and the lower surface of the pressing plate 18 is brought into contact with the upper surface of the holding table 17. At this time, the holding table 17 and the pressing plate 18 are parallel to each other. Next, after tightening the bolt and fixing the ball joint 33, the pressing plate 18 is raised.
平行度の調整は毎回行う必要はなく、適当な回数ごとに行う。また、上記では積層体を挟まずに平行度の調整を行ったが、圧着する積層体と同一厚みの板材を保持台１７と押圧板１８との間に介在させて平行度を調整してもよい。 The degree of parallelism does not need to be adjusted every time, but is adjusted every appropriate number of times. In the above description, the parallelism is adjusted without sandwiching the laminated body. However, the parallelism may be adjusted by interposing a plate material having the same thickness as the laminated body to be pressed between the holding base 17 and the pressing plate 18. Good.
以上によって平行度の調整が終了したら、窒素ガスがパージされて大気圧状態にあるチャンバー１１の開口１３をシャッター１４を下げることで開とする。そして、図示しない搬送装置で半導体ウェーハＷとサポートプレート２の積層体をチャンバー１１内に入れ、ピン２０上に受け渡し、シャッター１４で開口１３を閉じ、チャンバー１１内を気密な状態にする。図２はこの状態を示している。 When the adjustment of the parallelism is completed as described above, the opening 13 of the chamber 11 which is purged with nitrogen gas and is in the atmospheric pressure state is opened by lowering the shutter 14. Then, the stacked body of the semiconductor wafer W and the support plate 2 is put into the chamber 11 by a transfer device (not shown), transferred onto the pins 20, the opening 13 is closed by the shutter 14, and the inside of the chamber 11 is made airtight. FIG. 2 shows this state.
次いでチャンバー１１内を減圧し、圧力が１ｋＰａ以下になった時点で、シリンダユニット２１を駆動してピン２０を下げ、積層体を１５０℃程度まで加熱されている保持台１７上に載置する。 Next, the inside of the chamber 11 is depressurized, and when the pressure becomes 1 kPa or less, the cylinder unit 21 is driven to lower the pin 20, and the stacked body is placed on the holding table 17 heated to about 150 ° C.
上記と並行して、サーボモータ２９を駆動して押圧板１８を予め設定した位置まで降下せしめ、保持台１７と押圧板１８との間で積層体を加圧する。この状態で約１分間保持して基板Ｗとサポートプレート２とを熱圧着する。 In parallel with the above, the servo motor 29 is driven to lower the pressing plate 18 to a preset position, and the laminate is pressed between the holding base 17 and the pressing plate 18. In this state, the substrate W and the support plate 2 are thermocompression bonded by holding for about 1 minute.
この後、窒素ガスをパージしてチャンバー１１内を大気圧に戻し、押圧板１８を上昇せしめ、シャッター１４を下げ、熱圧着せしめられた積層体をチャンバー１１外へ搬出する。
尚、上記実施例ではチャンバー１１内の減圧状態を大気圧に戻した後に押圧板１８を上昇せしめるようにしたが、先に押圧板１８を上昇せしめ、この後にチャンバー１１内を大気圧に戻してもよい。
Thereafter, nitrogen gas is purged to return the inside of the chamber 11 to atmospheric pressure, the pressing plate 18 is raised, the shutter 14 is lowered, and the laminated body that has been thermocompression bonded is carried out of the chamber 11.
In the above embodiment, the pressure plate 18 is raised after the reduced pressure state in the chamber 11 is returned to atmospheric pressure. However, the pressure plate 18 is raised first, and then the inside of the chamber 11 is returned to atmospheric pressure. Also good.
サポートプレート２の上から溶剤としてのアルコールを注いで接着剤を溶解させる。図３は溶剤供給手段の具体例を示し、この例にあっては溶剤供給手段を溶剤供給プレート４０の下面にＯリング４１を設けている。溶剤供給プレート４０には溶剤（剥離液）供給管４２及び溶剤排出管４３が接続されている。而して、図３（ａ）の状態から溶剤供給プレート４０を降下させ、図３（ｂ）に示すように、サポートプレート２の上面にＯリング４１を介して溶剤供給プレート４０を重ね、次いでサポートプレート２、Ｏリング４１及び溶剤供給プレート４０で囲まれる空間に溶剤供給管４２から溶剤を供給し、サポートプレート２に形成した貫通孔３を介して接着剤層１を溶解し除去する。 Alcohol as a solvent is poured from above the support plate 2 to dissolve the adhesive. FIG. 3 shows a specific example of the solvent supply means. In this example, the solvent supply means is provided with an O-ring 41 on the lower surface of the solvent supply plate 40. A solvent (separating liquid) supply pipe 42 and a solvent discharge pipe 43 are connected to the solvent supply plate 40. Thus, the solvent supply plate 40 is lowered from the state of FIG. 3A, and the solvent supply plate 40 is overlaid on the upper surface of the support plate 2 via the O-ring 41 as shown in FIG. A solvent is supplied from a solvent supply pipe 42 to a space surrounded by the support plate 2, the O-ring 41 and the solvent supply plate 40, and the adhesive layer 1 is dissolved and removed through the through holes 3 formed in the support plate 2.
このように、Ｏリング４１によって溶剤が供給される空間を制限することで、溶剤がダイシングテープに極力溶剤がかかることを防げる。またテープにアルコールが触れた場合、アルコールによって溶解したテープののりがウェーハ表面を汚染する懸念があるが、この機構ではそれを防止することができる。 Thus, by limiting the space where the solvent is supplied by the O-ring 41, the solvent can prevent the solvent from being applied to the dicing tape as much as possible. Further, when alcohol touches the tape, there is a concern that the glue of the tape dissolved by the alcohol contaminates the wafer surface, but this mechanism can prevent this.
１…接着剤層、２…サポートプレート、３…貫通孔、４…グラインダー、５…ダイシングテープ、６…フレーム、７…ダイシング装置、１０…貼付け装置、１１…減圧チャンバー、１２…減圧用配管、１３…開口、１４…シャッター、１５…シリンダユニット、１６…プッシャー、１７…保持台、１８…押圧板、１９…貫通孔、２０…昇降ピン、２１…シリンダユニット、２２…プレート、２３…ヒータ、２４…バックプレート、２５…軸、２６…フランジ、２７…蛇腹、２８…フレーム、２９…サーボモータ、３０…スクリューネジ、３１…昇降体、３２…ナット部、３３…ボールジョイント、３４…センサ、４０…溶剤供給プレート、４１…Ｏリング、４２…溶剤（剥離液）供給管、４３…溶剤排出管、Ｗ…半導体ウェーハ。 DESCRIPTION OF SYMBOLS 1 ... Adhesive layer, 2 ... Support plate, 3 ... Through-hole, 4 ... Grinder, 5 ... Dicing tape, 6 ... Frame, 7 ... Dicing device, 10 ... Pasting device, 11 ... Decompression chamber, 12 ... Piping for decompression, DESCRIPTION OF SYMBOLS 13 ... Opening, 14 ... Shutter, 15 ... Cylinder unit, 16 ... Pusher, 17 ... Holding stand, 18 ... Pressing plate, 19 ... Through-hole, 20 ... Lifting pin, 21 ... Cylinder unit, 22 ... Plate, 23 ... Heater, 24 ... back plate, 25 ... shaft, 26 ... flange, 27 ... bellows, 28 ... frame, 29 ... servo motor, 30 ... screw screw, 31 ... lifting body, 32 ... nut part, 33 ... ball joint, 34 ... sensor, 40 ... Solvent supply plate, 41 ... O-ring, 42 ... Solvent (stripping liquid) supply pipe, 43 ... Solvent discharge pipe, W ... Semiconductor wafer.
Claims (3)
2. The bonding method according to claim 1, wherein the adhesive applied to the circuit forming surface of the substrate is dried at a temperature of 250 ° C. or lower, and the heating temperature of the laminate in a reduced pressure atmosphere is 200 ° C. or lower. How to paste the support plate.
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| KR1020050114164A KR101099248B1 (en) | 2004-11-29 | 2005-11-28 | Supporting plate attaching method |
| TW094141922A TWI430387B (en) | 2004-11-29 | 2005-11-29 | Supporting plate attaching method |
| CNB2005101363874A CN100530527C (en) | 2004-11-29 | 2005-11-29 | Stickup method of support plate |
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| WO2008012937A1 (en) * | 2006-07-28 | 2008-01-31 | Tokyo Ohka Kogyo Co., Ltd. | Wafer bonding method, thinning method and detaching method |
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| JP7396863B2 (en) | 2019-11-06 | 2023-12-12 | 株式会社ディスコ | Method of forming protective member |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1815688A (en) | 2006-08-09 |
| KR101099248B1 (en) | 2011-12-27 |
| KR20060059826A (en) | 2006-06-02 |
| TWI430387B (en) | 2014-03-11 |
| TW200629462A (en) | 2006-08-16 |
| CN100530527C (en) | 2009-08-19 |
| JP4652030B2 (en) | 2011-03-16 |
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