JP2006148005A - Semiconductor device, radiation imaging apparatus, and its manufacturing method - Google Patents

Semiconductor device, radiation imaging apparatus, and its manufacturing method Download PDF

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JP2006148005A
JP2006148005A JP2004338930A JP2004338930A JP2006148005A JP 2006148005 A JP2006148005 A JP 2006148005A JP 2004338930 A JP2004338930 A JP 2004338930A JP 2004338930 A JP2004338930 A JP 2004338930A JP 2006148005 A JP2006148005 A JP 2006148005A
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substrate
support member
electrical connection
connection portion
radiation imaging
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JP2006148005A5 (en
JP4819344B2 (en
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Shinichi Takeda
慎市 竹田
Yoshihiro Ogawa
善広 小川
Satoshi Okada
岡田  聡
Kazumi Nagano
和美 長野
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Canon Inc
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Canon Inc
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<P>PROBLEM TO BE SOLVED: To provide a radiation imaging apparatus having an arrangement of allowing connection and exchange of an electric connection component 150 even after a substrate having a pixel area 110 having pixels of a photosensor and a TFT two-dimensionally arranged is positioned on a support member 300 and fixed thereto. <P>SOLUTION: In a semiconductor device or a radiation imaging apparatus provided with a substrate having a semiconductor element or a conversion element bonded to a support member with a bonding member disposed therebetween; the support member has a first support member bonded to the substrate with the bonding member disposed therebetween, and also has a second support member mechanically connected to the first support member. When an electric component 150 such as TCP positioned at the periphery of a substrate 100 and connected thereto becomes fault, it becomes necessary to remove the faulty component and exchange it with a new electric component 160. Such an arrangement can solve the problem in the prior art that, when a laminating member 350 is present between a region of the substrate 100 having the electric component 160 disposed thereon and a support member 300, heat or pressure upon the exchange and connection causes the laminating member 350 to be displaced, so that a displacement takes place in an electric connection part between the electric component 160 and the substrate 100, with the result that the electric connection part cannot be uniformly pushed and thus the exchange and connection of the electric component cannot be preferably made. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は医療診断機器、非破壊検査機器等に用いられる放射線を電気信号として検出する放射線撮像装置に関するものである。なお、本明細書では、X線の他、α線、β線、γ線等の電磁波も、放射線に含まれるものとする。   The present invention relates to a radiation imaging apparatus that detects radiation used for medical diagnostic equipment, non-destructive testing equipment, and the like as an electrical signal. Note that in this specification, in addition to X-rays, electromagnetic waves such as α rays, β rays, and γ rays are included in radiation.

従来、X線蛍光体層が内部に備えられた蛍光スクリーンと両面塗布剤とを有するX線フィルムシステムが一般的にX線写真撮影に使用されてきた。しかし、最近、X線蛍光体層と2次元光検出器(センサーパネル)とを有するデジタル放射線撮像装置の画像特性が良好であること、また、データーがデジタルデーターであるためネットワーク化したコンピュータシステムに取り込むことによってデーターの共有化が図られる利点があることから、デジタル放射線撮像装置について盛んに研究開発が行われ、種々の特許出願もされている。   Conventionally, an X-ray film system having a fluorescent screen having an X-ray phosphor layer provided therein and a double-side coating agent has been generally used for X-ray photography. However, recently, the image characteristics of a digital radiation imaging apparatus having an X-ray phosphor layer and a two-dimensional photodetector (sensor panel) are good, and since the data is digital data, the networked computer system Since there is an advantage that data can be shared by taking in, the digital radiation imaging apparatus has been actively researched and developed, and various patent applications have been filed.

特に、a−Siを材料とする薄膜半導体を用いた2次元光検出器(以下、センサーパネルと称する)は、光電変換材料としてだけでなく、薄膜電界効果型トランジスタ(以下、「TFT」と称する。)の半導体材料としても用いることができ、光電変換素子とスイッチ素子であるTFTと同時に形成することができ好適であり、特許文献1に開示されているような提案がなされている。   In particular, a two-dimensional photodetector (hereinafter referred to as a sensor panel) using a thin film semiconductor made of a-Si is used not only as a photoelectric conversion material but also as a thin film field effect transistor (hereinafter referred to as “TFT”). It can also be used as a semiconductor material, and can be formed at the same time as a photoelectric conversion element and a TFT as a switch element, and has been proposed as disclosed in Patent Document 1.

図8は、前述の蛍光体層を複数のフォトセンサー及びTFT等の電気素子が配置されている光電変換素子部からなる2次元のセンサーパネルに形成した放射線撮像装置の断面図である。図8中、100はガラスからなる光電変換素子が形成された基板であり、基板110上に不図示のアモルファスシリコンを用いたフォトセンサーとTFTからなる画素が2次元的に配列され、画素領域110が形成されている。基板100と画素領域110でセンサーパネルを構成している。また、基板100上の周辺領域には、フォトセンサーやTFTの素子と接続され、外部電気回路と接続するための電気接続部(不図示)が形成されており、画素を駆動するためのテープ・キャリヤー・パッケージ(以下、「TCP」と略す)等の電気部品150と、異方性導電フィルム等の接着部材(不図示)と熱圧着により電気的に接続され、且つ接着固定されている。200はX線を可視光に変換するシンチレータであり、アクリル樹脂等の接着材250で基板100と接着固定されている。更に、基板100の下には、基板100を支持固定するためのステンレス板(冷間圧延ステンレス鋼鈑、以下「SUS」と略記する)等からなる支持部材300が配置されており、シリコン樹脂やアクリル樹脂等の接着材やウレタン、アクリル等のフォーム材からなる両面粘着シート等からなる貼り合わせ部材350により接着または粘着固定されている。これら全体で放射線撮像装置を構成するものである。
特開平09−298287号公報
FIG. 8 is a cross-sectional view of a radiation imaging apparatus in which the above-described phosphor layer is formed on a two-dimensional sensor panel including a photoelectric conversion element portion in which a plurality of photosensors and electric elements such as TFTs are arranged. In FIG. 8, reference numeral 100 denotes a substrate on which a photoelectric conversion element made of glass is formed. A photosensor using amorphous silicon (not shown) and a pixel made of TFT are two-dimensionally arranged on the substrate 110 to form a pixel region 110. Is formed. The substrate 100 and the pixel region 110 constitute a sensor panel. Further, in the peripheral region on the substrate 100, an electrical connection portion (not shown) connected to a photosensor or TFT element and connected to an external electric circuit is formed. An electrical component 150 such as a carrier package (hereinafter abbreviated as “TCP”) and an adhesive member (not shown) such as an anisotropic conductive film are electrically connected by thermocompression bonding and fixed. Reference numeral 200 denotes a scintillator that converts X-rays into visible light, and is bonded and fixed to the substrate 100 with an adhesive 250 such as an acrylic resin. Further, a support member 300 made of a stainless steel plate (cold rolled stainless steel plate, hereinafter abbreviated as “SUS”) or the like for supporting and fixing the substrate 100 is disposed under the substrate 100. It is bonded or adhesively fixed by a bonding member 350 made of an adhesive material such as an acrylic resin or a double-sided pressure-sensitive adhesive sheet made of a foam material such as urethane or acrylic. The entirety constitutes a radiation imaging apparatus.
JP 09-298287 A

上記放射線撮像装置の製造工程または検査工程において、基板100を支持部材300に配置固定した後の工程内検査やスクリーング時に、基板100の周辺に配置接続されたTCP等の電気部品150に不具合や不良が発生した場合、電気部品150の不良部品を除去し、新たな電気接続部品に交換する必要が生じることがある。   In the manufacturing process or inspection process of the radiation imaging apparatus, there is a problem with the electrical component 150 such as TCP that is disposed and connected around the substrate 100 during in-process inspection or screening after the substrate 100 is disposed and fixed to the support member 300. When a failure occurs, it may be necessary to remove the defective component of the electrical component 150 and replace it with a new electrical connection component.

しかしながら、従来の放射線撮像装置では、電気部品150が配置された基板100の下には、貼り合わせ部材350があるため、高温高圧の接続条件下では柔軟な貼り合わせ部材350が中間に介在すると接続が均一にできず、電気接続部品150の不良部品の交換が良好にできなかった。   However, in the conventional radiation imaging apparatus, since there is a bonding member 350 under the substrate 100 on which the electrical component 150 is arranged, the connection is made when the flexible bonding member 350 is interposed in the middle under high temperature and high pressure connection conditions. Cannot be made uniform, and defective parts of the electrical connection part 150 cannot be replaced well.

これは、貼り合わせ部材350が接続時の熱や圧力により変位し、電気部品150と電気的に接続される基板100の電気接続部と対向する接続装置のヒーターヘッド面と間でずれを生じ、基板100の電気接続部を一括で均一に押圧することができないことによるものである。   This is because the bonding member 350 is displaced by heat and pressure at the time of connection, and a deviation occurs between the heater head surface of the connecting device facing the electric connecting portion of the substrate 100 electrically connected to the electric component 150, This is because the electrical connection portions of the substrate 100 cannot be pressed uniformly at a time.

そこで本発明は、フォトセンサーとTFTからなる画素が2次元的に配列された画素領域110を有する基板100を、支持部材300上に配置固定した後においても電気接続部品150の接続及び交換が可能な構成である放射線撮像装置を提供することを目的とするものである。   Therefore, according to the present invention, the electrical connection component 150 can be connected and replaced even after the substrate 100 having the pixel region 110 in which pixels including photosensors and TFTs are two-dimensionally arranged is fixed on the support member 300. An object of the present invention is to provide a radiation imaging apparatus having a simple configuration.

本発明における半導体装置は、複数の半導体素子が配された半導体素子部と、該半導体素子部の周囲に配され、前記半導体素子部に配線を介して電気的に接続された電気接続部と、を有する基板と、該電気接続部に電気的に接続された電気部品と、前記基板と貼り合わせ部材を介して接着された前記基板を支持する支持部材と、を有し、前記支持部材は、少なくとも前記電気接続部を含む領域を除いた領域において前記基板に前記貼り合わせ部材を介して接着される第1の支持部材と、少なくとも前記電気接続部を含む領域の前記基板に応じて前記第1の支持部材に機械的に接続される第2の支持部材と、を有することを特徴とするものである。   A semiconductor device according to the present invention includes a semiconductor element portion in which a plurality of semiconductor elements are disposed, an electrical connection portion that is disposed around the semiconductor element portion and is electrically connected to the semiconductor element portion via a wiring, A substrate having an electrical connection part, an electrical component electrically connected to the electrical connection portion, and a support member that supports the substrate bonded to the substrate through a bonding member. A first support member bonded to the substrate via the bonding member in a region excluding a region including at least the electrical connection portion, and the first support member according to the substrate in a region including at least the electrical connection portion. And a second support member mechanically connected to the support member.

また、本発明における半導体装置は、前記基板と前記第2の支持部材の間に緩衝部材を更に有することを特徴とするものである。   The semiconductor device according to the present invention further includes a buffer member between the substrate and the second support member.

また、本発明における放射線撮像装置は、放射線を電気信号に変換する変換素子の複数が配された画素部と、該画素部の周囲に配され前記画素部に配線を配して電気的に接続された電気接続部と、を有する基板と、該電気接続部に電気的に接続された電気部品と、前記基板と貼り合わせ部材を介して接着された前記基板を支持する支持部材と、を有し、前記支持部材は、少なくとも前記電気接続部を含む領域を除いた領域において前記基板に前記貼り合わせ部材を介して接着される第1の支持部材と、少なくとも前記電気接続部を含む領域の前記基板に応じて前記第1の支持部材に機械的に接続される第2の支持部材と、を有することを特徴とするものである。   In addition, the radiation imaging apparatus according to the present invention includes a pixel unit in which a plurality of conversion elements that convert radiation into an electrical signal are arranged, and an electrical connection that is arranged around the pixel unit and has a wiring arranged in the pixel unit. A substrate having an electrical connection portion, an electrical component electrically connected to the electrical connection portion, and a support member for supporting the substrate bonded to the substrate through a bonding member. The support member includes a first support member that is bonded to the substrate via the bonding member in a region excluding at least the region including the electrical connection portion, and the region including at least the electrical connection portion. And a second support member mechanically connected to the first support member in accordance with the substrate.

また、本発明における放射線撮像装置は、前記基板と前記第2の支持部材の間に緩衝部材を更に有することを特徴とするものである。   The radiation imaging apparatus according to the present invention further includes a buffer member between the substrate and the second support member.

また、本発明における緩衝部材は、少なくとも前記基板に接する面が非接着性の弾性体であることが望ましい。   Moreover, it is preferable that the buffer member in the present invention is a non-adhesive elastic body at least on the surface in contact with the substrate.

また、本発明における第1の支持部材は、少なくとも電気接続部を含む領域を除いた基板と概略等しい形状を有し、また更に、本発明における第2の支持部材は、少なくとも電気接続部を含む領域と概略等しい形状を有することが望ましい。   Moreover, the 1st support member in this invention has a shape substantially equal to the board | substrate except the area | region containing an electrical connection part at least, Furthermore, the 2nd support member in this invention contains an electrical connection part at least. It is desirable to have a shape approximately equal to the region.

また、本発明における第2の支持部材は、ねじあるいは勘合により第1の支持部材に機械的に接続されることが望ましい。   In addition, the second support member in the present invention is desirably mechanically connected to the first support member by screws or fitting.

また、本発明における半導体装置の製造方法は、複数の半導体素子を含む半導体素子部を有する基板上に、前記半導体素子部の周囲の前記基板上に設けられた電気接続部を介して電気部品を接続する工程と、少なくとも前記電気接続部を含む領域を除いた領域において、前記基板と貼り合わせ部材を介して第1の支持部材を接着する工程と、少なくとも前記電気接続部を含む領域に応じて、前記第1の支持部材に第2の支持部材を機械的に接続する工程と、を有する。   According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device in which an electrical component is placed on a substrate having a semiconductor element portion including a plurality of semiconductor elements via an electrical connection portion provided on the substrate around the semiconductor element portion. In accordance with the step of connecting, the step of adhering the first support member via the bonding member to the substrate, and the region including at least the electric connection portion in the region excluding the region including at least the electric connection portion And mechanically connecting a second support member to the first support member.

また、本発明における半導体装置の製造方法は、前記基板と前記第2の支持部材との間に緩衝部材を配置する工程と、を更に有することが望ましい。   The method for manufacturing a semiconductor device according to the present invention preferably further includes a step of disposing a buffer member between the substrate and the second support member.

また、本発明における半導体装置の製造方法は、複数の半導体素子が配された半導体素子部と、該半導体素子部の周囲に配され該半導体素子部に電気的に接続された電気接続部と、を有する基板と、該電気接続部に接続された電気部品と、少なくとも前記電気接続部を含む領域を除いた領域において前記基板に前記貼り合わせ部材を介して接着された第1の支持部材と、少なくとも前記電気接続部を含む領域の前記基板に応じて前記第1の支持部材に機械的に接続された第2の支持部材と、前記基板と前記第2の支持部材との間に配置された緩衝部材と、を有する半導体装置の製造方法であって、前記電気接続部から前記電気部品を取り外す工程と、前記電気部品が取り外された前記電気接続部に応じた前記緩衝部材と前記第2の支持部材と取り外す工程と、前記電気部品が取り外された前記電気接続部に新たな電気部品を接続する工程と、該新たな電気部品が接続された前記電気接続部に応じて前記第1の支持部材に第2の支持部材を機械的に接続し、前記基板と該第2の支持部材との間に緩衝部材を配置する工程と、を有することを特徴とするものである。   In addition, a method of manufacturing a semiconductor device according to the present invention includes a semiconductor element portion in which a plurality of semiconductor elements are disposed, an electrical connection portion that is disposed around the semiconductor element portion and is electrically connected to the semiconductor element portion, A first support member bonded to the substrate via the bonding member in a region excluding at least the region including the electrical connection portion, a substrate having the electrical connection portion, A second support member mechanically connected to the first support member according to the substrate in a region including at least the electrical connection portion, and disposed between the substrate and the second support member A step of detaching the electrical component from the electrical connection portion, the cushioning member corresponding to the electrical connection portion from which the electrical component has been removed, and the second method. With support members Removing the electrical component, connecting the new electrical component to the electrical connection portion from which the electrical component has been removed, and the first support member according to the electrical connection portion to which the new electrical component is connected. Mechanically connecting a second support member, and disposing a buffer member between the substrate and the second support member.

本発明は、少なくとも電気接続部を含む領域を除いた領域において基板に貼り合わせ部材を介して接着される第1の支持部材と、少なくとも電気接続部を含む領域の基板に応じて第1の支持部材に機械的に接続される第2の支持部材と、を有する支持部材によって基板が支持されることにより、接続された電気部品に不良が発見された場合に、電気部品の交換接続作業が容易に行うことが可能となる。また、基板と第2の支持部材との間に緩衝部材を配置することにより、電気接続部を含む領域における基板の耐衝撃性が向上し、電気部品と電気接続部との接着性が向上する。また、緩衝部材として、少なくとも前記基板に接する面が非接着性の弾性体を用いることにより、緩衝部材及び第2の支持部材の取り外しが容易に行うことが可能となるため、接続された電気部品に不良が発見された場合に、電気部品の交換接続作業が容易に行うことが可能となる。よって基板を支持部材に配置固定した後においても電気部品の接続が可能な構成となり、電気部品の交換が可能な半導体装置及び放射線撮像装置を提供することが可能となる。   The present invention provides a first support member bonded to a substrate via a bonding member in a region excluding a region including at least the electrical connection portion, and a first support according to the substrate in the region including at least the electrical connection portion. The substrate is supported by the support member having the second support member mechanically connected to the member, so that it is easy to replace and connect the electrical component when a defect is found in the connected electrical component. Can be performed. Further, by disposing the buffer member between the substrate and the second support member, the impact resistance of the substrate in the region including the electrical connection portion is improved, and the adhesion between the electrical component and the electrical connection portion is improved. . Moreover, since the buffer member and the second support member can be easily removed by using an elastic body having at least a non-adhesive surface in contact with the substrate as the buffer member, the connected electrical components In the case where a defect is found, it is possible to easily replace and connect electrical components. Therefore, even after the substrate is arranged and fixed on the support member, the electrical components can be connected, and it is possible to provide a semiconductor device and a radiation imaging apparatus in which the electrical components can be replaced.

また、放射線撮像装置においては、電気部品が接続される電気接続部を少なくとも含む領域において基板と第2の支持部材との間に緩衝部材を配置することにより、検診車への設置等の際に生じる設置環境での振動に対する抑制効果や、落下や衝撃等対しての衝撃吸収効果が得られる。振動に対する抑制効果や衝撃性吸収効果により、振動や衝撃により発生する微小な接続抵抗や配線容量の変化に起因する放射線撮像装置の解像度低下などの悪影響を防止することが可能となる。   In addition, in the radiation imaging apparatus, a buffer member is disposed between the substrate and the second support member in a region including at least an electrical connection part to which an electrical component is connected, so that the radiation imaging apparatus can be installed in a medical examination car. It is possible to obtain an effect of suppressing vibrations in the installation environment and a shock absorbing effect against dropping or impact. By virtue of the suppression effect against vibration and the impact absorption effect, it is possible to prevent adverse effects such as a reduction in resolution of the radiation imaging apparatus due to a minute connection resistance or a change in wiring capacitance caused by vibration or shock.

以下に、本発明を実施するための最良の形態について、図面を参照して詳細に説明する。   The best mode for carrying out the present invention will be described below in detail with reference to the drawings.

図1(A)〜(C)は、本発明による放射線撮像装置の一実施形態の構成を示す概略構成図であり、図1(A)には本実施形態における放射線撮像装置の模式的平面図を、図1(B)には図1(A)のA−A’における模式的断面図を、図1(C)には図1(A)のB−B’における模式的断面図をそれぞれ示す。   1A to 1C are schematic configuration diagrams showing a configuration of an embodiment of a radiation imaging apparatus according to the present invention. FIG. 1A is a schematic plan view of the radiation imaging apparatus in the present embodiment. 1B is a schematic cross-sectional view taken along the line AA ′ of FIG. 1A, and FIG. 1C is a schematic cross-sectional view taken along the line BB ′ of FIG. Show.

図1(A)〜(C)において、100はガラス等からなる基板である。基板100上には、放射線または光を電気信号に変換する変換素子とTFT等の信号転送素子とで構成された画素が2次元状に配列された画素部110を有している。更に、画素部110の周辺の基板110上に、信号転送手段を駆動するための駆動配線、変換素子で変換され信号転送手段で転送された電気信号を読み出すための信号配線、変換素子にバイアスを印加するためのバイアス配線、及び上記各配線と外部回路とを接続するための電気接続部が設けられている。基板100と画素部110、駆動配線、信号配線、バイアス配線、及び電気接続部によりセンサーパネル10が構成されている。ここで、変換素子は、放射線を直接電気信号に変換するアモルファスセレン(a−Se)などを用いてもよいし、放射線から後述するシンチレータによって変換された光を電気信号に変換するアモルファスシリコン等からなるフォトダイオード、フォトコンデンサなどのフォトセンサー(光電変換素子)などを用いてもよい。また、画素部110、駆動配線、信号配線、バイアス配線をSiO2やSiN等の無機膜からなる保護層を用いて被覆してもよい。また、保護層上に更にポリイミド等の有機膜からなるパッシベーション膜を用いて被覆し、センサーパネルの表面の平坦化を行ってもよい。   1A to 1C, reference numeral 100 denotes a substrate made of glass or the like. On the substrate 100, there is a pixel portion 110 in which pixels composed of a conversion element that converts radiation or light into an electric signal and a signal transfer element such as a TFT are two-dimensionally arranged. Further, on the substrate 110 around the pixel portion 110, a drive wiring for driving the signal transfer means, a signal wiring for reading the electric signal converted by the conversion element and transferred by the signal transfer means, and a bias for the conversion element are provided. A bias wiring for applying and an electrical connection for connecting each of the wirings to an external circuit are provided. The sensor panel 10 is configured by the substrate 100, the pixel portion 110, the drive wiring, the signal wiring, the bias wiring, and the electrical connection portion. Here, the conversion element may use amorphous selenium (a-Se) or the like that directly converts radiation into an electric signal, or amorphous silicon or the like that converts light converted from radiation by a scintillator described later into an electric signal. Photosensors (photoelectric conversion elements) such as photodiodes and photocapacitors may be used. Further, the pixel portion 110, the drive wiring, the signal wiring, and the bias wiring may be covered with a protective layer made of an inorganic film such as SiO 2 or SiN. Further, the surface of the sensor panel may be flattened by further covering the protective layer with a passivation film made of an organic film such as polyimide.

150は基板100の電気接続部に電気的に接続されたTCP等の電気部品である。電気部品150は、画素を駆動する駆動回路、或いは画素から読み出された電気信号を増幅するなどの信号処理を行う信号処理回路を含んでいる。また、電気部品150は基板100の外周部の電気接続部において、電気部品150の接続電極(不図示)と電機接続部の接続電極(不図示)とを異方性導電フィルムなどの接着部材(不図示)を用いて電気的に接続されている。また、電気部品150は基板100に接着部材により機械的に固定されている。また、電気部品150は、基板100と対向した位置にプリント配線基板などの電気回路基板(不図示)と接続される。   Reference numeral 150 denotes an electrical component such as TCP that is electrically connected to the electrical connection portion of the substrate 100. The electrical component 150 includes a drive circuit that drives the pixel or a signal processing circuit that performs signal processing such as amplifying an electrical signal read from the pixel. In addition, the electrical component 150 includes an adhesive member (such as an anisotropic conductive film) that connects a connection electrode (not shown) of the electrical component 150 and a connection electrode (not shown) of the electrical connection portion at the electrical connection portion on the outer periphery of the substrate 100. (Not shown). The electrical component 150 is mechanically fixed to the substrate 100 with an adhesive member. The electrical component 150 is connected to an electrical circuit board (not shown) such as a printed wiring board at a position facing the board 100.

200は放射線を可視光に波長変換するためのシンチレータ(波長変換体)である。シンチレータ200は、基板100の画素部110を有する面(X線などの放射線が入射される面)上に画素部110を覆うように配置されている。本実施形態では、アクリル樹脂などの接着剤250により基板100の画素部110を有する面上に接着固定されている。また、シンチレータ200は、ポリエチレンテレフタレート(以下「PET」と略記する)等の基材に、ポリエステルなどのバインダー樹脂にGdS(以下「GOS」と略記する)などの粒子結晶構造を有する蛍光体の粉体を塗布硬化して形成された蛍光体層が接着材250を介して配された構成や、アモルファスカーボン(以下「a−C」と略記する)等の基材に、タリウム活性化ヨウ化セシウム(以下「CsI:Tl」と略記する)などのアルカリハライドよりなる柱状結晶構造を有する蛍光体層が接着材250を介して配された構成や、基板100の画素部110を有する面上に直接蒸着により形成されたCsI:Tlなどのアルカリハライドよりなる柱状結晶構造を有する蛍光体層が配された構成、を適宜採用することが可能である。上記シンチレータ200とセンサーパネル10により放射線撮像パネル20が構成される。 Reference numeral 200 denotes a scintillator (wavelength converter) for converting the wavelength of radiation into visible light. The scintillator 200 is arranged so as to cover the pixel unit 110 on the surface of the substrate 100 having the pixel unit 110 (the surface on which radiation such as X-rays is incident). In this embodiment, the adhesive is fixed on the surface having the pixel portion 110 of the substrate 100 with an adhesive 250 such as an acrylic resin. The scintillator 200 has a particle crystal structure such as Gd 2 O 2 S (hereinafter abbreviated as “GOS”) on a binder resin such as polyester on a base material such as polyethylene terephthalate (hereinafter abbreviated as “PET”). Thallium activity on a base material such as a structure in which a phosphor layer formed by applying and curing phosphor powder is disposed through an adhesive 250, or amorphous carbon (hereinafter abbreviated as “a-C”) A structure in which a phosphor layer having a columnar crystal structure made of an alkali halide such as cesium iodide (hereinafter abbreviated as “CsI: Tl”) is arranged through an adhesive 250, or a pixel portion 110 of the substrate 100 is included. A structure in which a phosphor layer having a columnar crystal structure made of an alkali halide such as CsI: Tl formed by direct vapor deposition on the surface can be appropriately adopted. Noh. The scintillator 200 and the sensor panel 10 constitute a radiation imaging panel 20.

300は基板100の画素部110を有する面と反対側の面に配され、基板100を支持するための支持部材である。支持部材300は、後述する貼り合わせ部材350を介して基板100に接着され基板100を支持する第1の支持部材301と、第1の支持部材301に機械的な構成により接続された第2の支持部材311によって構成されている。第1の支持部材301及び第2の支持部材311は、SUS(Stainless Used Steel)、Al、Moなどの金属材料やガラス、セラミックなどから構成されている。第1の支持部材301は、基板100の1辺に配された1つのもしくは複数の電気接続部を含む領域を除いた基板100の領域に応じて配され、基板100の1辺に配された1つのもしくは複数の電気接続部を含む領域を除いた基板100の形状と概略同じ形状を有する。上記第1の支持基板301の配置及び形状により、基板100の電気接続部を含む領域は、その下方である基板100の画素部110が形成される面の裏面側において貼り合わせ部材350を介して第1の支持部材301と接着されない構成となる。また、貼り合わせ部材350は、第1の支持部材301と基板100とを接着するよう配されているため、第1の支持部材301の形状と概略同じ形状となり、基板100の電気接続部を含む領域の下方である基板100の画素部110が形成される面の裏面側には配されず、第1の支持部材301と機械的に接続される第2の支持部材311と電気接続部を含む領域の基板100との間に間隙を有する構成となる。第2の支持部材311は、ネジなどの更なる部品で留める、または、支持部材を互いにフック形状に形成するなどの、機械的な構成により第1の支持部材311と接続され、基板100とは貼り合わせ部材350を介した接着をされずに配置されている。   Reference numeral 300 denotes a support member that is disposed on the surface of the substrate 100 opposite to the surface having the pixel portion 110 and supports the substrate 100. The support member 300 is bonded to the substrate 100 via a bonding member 350 described later, and a first support member 301 supporting the substrate 100, and a second support member connected to the first support member 301 by a mechanical configuration. The supporting member 311 is configured. The first support member 301 and the second support member 311 are made of a metal material such as SUS (Stainless Used Steel), Al, or Mo, glass, ceramic, or the like. The first support member 301 is arranged in accordance with the region of the substrate 100 excluding the region including one or a plurality of electrical connection portions arranged on one side of the substrate 100, and is arranged on one side of the substrate 100. The substrate 100 has substantially the same shape as that of the substrate 100 excluding a region including one or a plurality of electrical connection portions. Due to the arrangement and shape of the first support substrate 301, the region including the electrical connection portion of the substrate 100 is located below the surface of the substrate 100 where the pixel portion 110 of the substrate 100 is formed via the bonding member 350. The first support member 301 is not bonded. Further, since the bonding member 350 is disposed so as to bond the first support member 301 and the substrate 100, the bonding member 350 has approximately the same shape as the first support member 301 and includes the electrical connection portion of the substrate 100. A second support member 311 that is mechanically connected to the first support member 301 and is not disposed on the back side of the surface on which the pixel portion 110 of the substrate 100 is formed, which is below the region, and an electrical connection portion. A region having a gap between the region and the substrate 100 is formed. The second support member 311 is connected to the first support member 311 by a mechanical configuration such as fastening with a further part such as a screw or forming the support members in a hook shape with each other. It arrange | positions, without adhere | attaching via the bonding member 350. FIG.

350は基板100と第1の支持部材301との間に配された貼り合わせ部材であり、基板100と第1の支持部材301を接着固着する。本実施形態における貼り合わせ部材350は、シート状の両面粘着性アクリルフォームのシートやシリコン等の樹脂接着材によって構成されている。ここで、貼り合わせ部材350は、例えば、住友3M社製アクリルフォーム構造用接合テープY−4989などの、アクリルフォーム基材の両側にアクリル系粘着剤が塗布された両面粘着テープからなるものが好適に用いられる。更に、本発明における貼り合わせ部材350は、基板100の電気部品150と電気的に接続される電気接続部を少なくとも含む電気接続部形成領域と、第2の支持部材311の間に間隙を有して配されている。   A bonding member 350 is disposed between the substrate 100 and the first support member 301, and adheres and fixes the substrate 100 and the first support member 301. The bonding member 350 in the present embodiment is configured by a sheet-like double-sided adhesive acrylic foam sheet or a resin adhesive such as silicon. Here, the bonding member 350 is preferably made of a double-sided pressure-sensitive adhesive tape in which an acrylic pressure-sensitive adhesive is applied to both sides of an acrylic foam substrate, such as Sumitomo 3M acrylic foam structure bonding tape Y-4899. Used for. Further, the bonding member 350 according to the present invention has a gap between the second connecting member 311 and the second connecting member 311 and the electric connecting portion forming region including at least the electric connecting portion electrically connected to the electric component 150 of the substrate 100. Are arranged.

1は基板100の電気接続部を少なくとも含む電気接続部形成領域と第2の支持部材311の間に設けられた間隙に配される緩衝部材である。緩衝部材1としては、接着性を持たない弾性体のシート状のものが好ましく、アクリル、ウレタン、ポリエチレン、シリコン、ポリオレフィン、アクリロニトリルブタジエン、クロロプレン、エチレン・プロピレン等の樹脂材料を用いたシートや更に前記材料中に気泡を有するフォーム材料を用いることができる。ここで、接着性を持たない弾性体とは、粘着剤層を持たず、例えばロジン及びその誘導体、ポリテルペン、キシレン樹脂などの粘着付与剤成分を付与することなく作製された、非粘着性の樹脂ことを示すものである。また、緩衝部材1としては、上記樹脂材料を用いたシートや更に前記樹脂材料中に気泡を有するシートが好適に用いられる。   Reference numeral 1 denotes a buffer member disposed in a gap provided between an electrical connection portion forming region including at least the electrical connection portion of the substrate 100 and the second support member 311. The buffer member 1 is preferably an elastic sheet having no adhesiveness, and a sheet using a resin material such as acrylic, urethane, polyethylene, silicon, polyolefin, acrylonitrile butadiene, chloroprene, ethylene / propylene, and the above-mentioned A foam material having bubbles in the material can be used. Here, the non-adhesive elastic body is a non-tacky resin that does not have a pressure-sensitive adhesive layer and is prepared without adding a tackifier component such as rosin and its derivatives, polyterpene, and xylene resin. It shows that. Moreover, as the buffer member 1, the sheet | seat which uses the said resin material, and also the sheet | seat which has a bubble in the said resin material are used suitably.

(実施例1)
本実施例は、図1〜3に示される放射線撮像装置の例である。
Example 1
This embodiment is an example of the radiation imaging apparatus shown in FIGS.

図1(A)〜(C)は、本実施例における放射線撮像装置の構成を示す概略構成図であり、図1(A)には本実施例における放射線撮像装置の模式的平面図を、図1(B)には図1(A)のA−A’における模式的断面図を、図1(C)には図1(A)のB−B’における模式的断面図をそれぞれ示す。   1A to 1C are schematic configuration diagrams illustrating the configuration of the radiation imaging apparatus according to the present embodiment. FIG. 1A is a schematic plan view of the radiation imaging apparatus according to the present embodiment. 1B is a schematic cross-sectional view taken along the line AA ′ of FIG. 1A, and FIG. 1C is a schematic cross-sectional view taken along the line BB ′ of FIG.

ガラスからなる基板100上の画素部110に、アモルファスシリコンからなるフォトセンサー及びTFTによって構成された画素が2次元的に配列されている。更に画素部110の周辺の基板100上には、TFTを駆動するための駆動配線、フォトセンサーで変換されTFTで転送された電気信号を読み出すための信号配線、フォトセンサーにバイアスを印加するためのバイアス配線、及び上記各配線と外部回路とを接続するための電気接続部が設けられている。更に、電気接続部が設けられた領域を除いた基板100上に、画素部100、駆動配線、信号配線、バイアス配線を被覆する、SiN 等からなる保護膜(不図示)が形成されている。基板100と画素部110、駆動配線、信号配線、バイアス配線、電気接続部、及び保護膜によりセンサーパネル10が構成されている。 Pixels constituted by photosensors and TFTs made of amorphous silicon are two-dimensionally arranged on the pixel portion 110 on the substrate 100 made of glass. Further, on the substrate 100 around the pixel portion 110, a driving wiring for driving the TFT, a signal wiring for reading out an electric signal converted by the photosensor and transferred by the TFT, and a bias for applying a bias to the photosensor. Bias wirings and electrical connection parts for connecting the respective wirings and external circuits are provided. Further, a protective film (not shown) made of SiN x or the like that covers the pixel portion 100, the drive wiring, the signal wiring, and the bias wiring is formed on the substrate 100 excluding the region where the electrical connection portion is provided. . The sensor panel 10 is configured by the substrate 100, the pixel portion 110, the drive wiring, the signal wiring, the bias wiring, the electrical connection portion, and the protective film.

基板100の周辺に形成された電気接続部上には、TCPからなる電気部品150が接続されている。   An electrical component 150 made of TCP is connected to the electrical connection portion formed around the substrate 100.

基板100の画素部110上には、PETにGOSを含んだバインダーを塗布して形成されたシンチレータ200が、アクリル系の接着剤250によって接着固定され配されている。   On the pixel portion 110 of the substrate 100, a scintillator 200 formed by applying a binder containing GOS to PET is bonded and fixed by an acrylic adhesive 250.

また、基板100の下にはSUSからなる第1の支持部材301が配置され、粘着性アクリルフォームからなるシート状の貼り合わせ部材350により粘着固定されている。第1の支持部材301は、基板100の1辺に配されたすべての電気接続部を含む領域を除いた基板100の領域に応じて配され、基板100の1辺に配されたすべての電気接続部を含む領域を除いた基板100の形状と概略同じ形状を有する。更に、基板100の1辺に配されたすべての電気接続部を含む領域に対応して、第1の支持部材301に機械的に接続された第2の支持部材311が配置されており、第1の支持部材301と第2の支持部材311とが機械的に接続されて支持部材300を構成している。貼り合わせ部材350は、基板100の電気部品150と電気的に接続される電気接続部を少なくとも含む電気接続部形成領域と第2の支持部材311の間に間隙を有して配されており、間隙には、接着性を有さない弾性体であるアクリル樹脂からなる緩衝部材1が配されている。   Further, a first support member 301 made of SUS is disposed under the substrate 100, and is adhesively fixed by a sheet-like bonding member 350 made of adhesive acrylic foam. The first support member 301 is arranged according to the area of the substrate 100 excluding the area including all the electrical connection portions arranged on one side of the substrate 100, and all the electric power arranged on one side of the substrate 100. It has substantially the same shape as the shape of the substrate 100 excluding the region including the connecting portion. Further, a second support member 311 mechanically connected to the first support member 301 is disposed corresponding to a region including all the electrical connection portions arranged on one side of the substrate 100, and The first support member 301 and the second support member 311 are mechanically connected to constitute the support member 300. The bonding member 350 is disposed with a gap between the second support member 311 and the electrical connection portion forming region including at least an electrical connection portion electrically connected to the electrical component 150 of the substrate 100. A buffer member 1 made of an acrylic resin that is an elastic body having no adhesiveness is disposed in the gap.

本実施例では、基板100の各辺に対し1つの第2の支持部材311と緩衝部材1を各々用意し、一辺に配置される複数の電気部品150が配置される領域に対して各々一括して設けられるよう形成している。   In the present embodiment, one second support member 311 and a buffer member 1 are prepared for each side of the substrate 100, and are collectively collected for a region where a plurality of electrical components 150 arranged on one side are arranged. It is formed to be provided.

次に、図2(A)〜(D)を用いて、本発明の放射線撮像装置の製造方法について、詳細に説明する。   Next, the manufacturing method of the radiation imaging apparatus of the present invention will be described in detail with reference to FIGS.

まず、図2(A)に示すように、ガラス等からなる基板100上に、アモルファスシリコンからなるフォトセンサー及びTFTによって構成された画素が2次元的に配列された画素部110が形成される。また、画素部110の周辺の基板100上には、TFTを駆動するための駆動配線、フォトセンサーで変換されTFTで転送された電気信号を読み出すための信号配線、フォトセンサーにバイアスを印加するためのバイアス配線、及び上記各配線と外部回路とを接続するための電気接続部が形成されている。更に、電気接続部が設けられた領域を除いた基板100上に、画素部100、駆動配線、信号配線、バイアス配線を被覆する、SiN 等からなる保護膜(不図示)が形成されている。これらは、薄膜半導体プロセスにより作製され、ここでセンサーパネル10が完成する。 First, as shown in FIG. 2A, on a substrate 100 made of glass or the like, a pixel portion 110 in which pixels made up of photosensors and TFTs made of amorphous silicon are two-dimensionally arranged is formed. In addition, on the substrate 100 around the pixel portion 110, a driving wiring for driving the TFT, a signal wiring for reading out an electric signal converted by the photosensor and transferred by the TFT, and a bias for applying the photosensor. Bias wirings and electrical connection portions for connecting the wirings and external circuits are formed. Further, a protective film (not shown) made of SiN x or the like that covers the pixel portion 100, the drive wiring, the signal wiring, and the bias wiring is formed on the substrate 100 excluding the region where the electrical connection portion is provided. . These are produced by a thin film semiconductor process, and the sensor panel 10 is completed here.

次に、図2(B)に示すように、PETなどの基材に蛍光体粒子を含んだバインダーを塗布して形成されたシンチレータ200を、基板100の画素部110上にアクリル系の接着剤250を用いて貼り合わせて、放射線撮像パネル20を形成する。   Next, as shown in FIG. 2B, a scintillator 200 formed by applying a binder containing phosphor particles to a base material such as PET is attached to an acrylic adhesive on the pixel portion 110 of the substrate 100. The radiation imaging panel 20 is formed by pasting together using 250.

次に、図2(C)に示すように、基板100の周辺領域に準備された電気接続部上に、電気接続部に対向した接続電極を有する電気部品150を、異方性導電フィルムを用いて熱圧着により機械的及び電気的接続を行う。本実施例では、電気部品150は、TCP(Tape Carrier Package)やCOF(Chip On Flexible printed circuit board)等の、半導体チップを実装した配線板を用いることにより、電気部品150の電気回路基板側の接続電極数を減らし電気回路基板との実装を容易にしている。無論、ここでフレキシブルプリント配線板等の半導体チップを有さない電気部品150を基板100の電気接続部に固定し、電気回路基板に半導体チップを実装する、もしくは同様の機能を有する回路を形成することも可能である。   Next, as shown in FIG. 2C, an electrical component 150 having a connection electrode facing the electrical connection portion on the electrical connection portion prepared in the peripheral region of the substrate 100 is formed using an anisotropic conductive film. Then, mechanical and electrical connections are made by thermocompression bonding. In the present embodiment, the electrical component 150 uses a wiring board on which the semiconductor chip is mounted, such as TCP (Tape Carrier Package) or COF (Chip On Flexible printed circuit board). The number of connection electrodes is reduced to facilitate mounting with an electric circuit board. Of course, the electric component 150 having no semiconductor chip such as a flexible printed wiring board is fixed to the electric connecting portion of the substrate 100, and the semiconductor chip is mounted on the electric circuit board or a circuit having a similar function is formed. It is also possible.

次に、図2(D)に示すように、電気部品150を接続したセンサーパネル10の裏面と、SUSからなる第1の支持部材301とを、厚さ1mmの粘着性アクリルフォームからなるシート状の貼り合わせ部材350により粘着固定させる。ここで、第1の支持部材301は、基板100の1辺に配されたすべての電気接続部を含む領域を除いた基板100の領域に応じて配され、基板100の1辺に配されたすべての電気接続部を含む領域を除いた基板100の形状と概略同じ形状を有する。本発明においては、貼り合わせ部材350は第1の支持部材350の形状に応じて配され、少なくとも電気部品150が配置される領域の基板100の下面と支持部材300との間には間隙を有するよう貼り合わせ部材350が配置されない構成とする。また、面状のプレス装置を用いて放射線撮像パネル20のシンチレータ200上の表面と支持部材300の表面とを押圧し、貼り合わせ部材350により接着固定している。   Next, as shown in FIG. 2D, the back surface of the sensor panel 10 to which the electrical component 150 is connected and the first support member 301 made of SUS are formed into a sheet shape made of an adhesive acrylic foam having a thickness of 1 mm. The adhesive member 350 is adhesively fixed. Here, the first support member 301 is arranged in accordance with the area of the substrate 100 excluding the area including all the electrical connection portions arranged on one side of the substrate 100, and is arranged on one side of the substrate 100. The substrate 100 has substantially the same shape as that of the substrate 100 except for the region including all the electrical connection portions. In the present invention, the bonding member 350 is arranged according to the shape of the first support member 350, and there is a gap between the lower surface of the substrate 100 and the support member 300 at least in the region where the electric component 150 is disposed. The bonding member 350 is not arranged. Further, the surface of the radiation imaging panel 20 on the scintillator 200 and the surface of the support member 300 are pressed using a planar press device, and are bonded and fixed by a bonding member 350.

次に、図2(E)に示すように、第2の支持部材311を、基板100の1辺に配された電気接続部を含む領域に応じた位置に、第1の支持部材301にネジにて締め付け固定して配置する。ここで、第2の支持部材311は、基板100の1辺に配された電気接続部を含む領域の形状と概略同じ形状を有する。第1の支持部材301と第2の支持部材311により支持部材300が構成される。   Next, as shown in FIG. 2E, the second support member 311 is screwed onto the first support member 301 at a position corresponding to the region including the electrical connection portion arranged on one side of the substrate 100. Tighten and fix with. Here, the second support member 311 has substantially the same shape as the shape of the region including the electrical connection portion arranged on one side of the substrate 100. A support member 300 is configured by the first support member 301 and the second support member 311.

更に、電気部品150が配置される領域の基板100の下面と第2の支持部材311との間の間隙に非接着性のアクリルフォームからなる緩衝部材1を側方より挿入して配置し、図1(A)及び(B)に示される放射線撮像装置を作製した。   Further, the buffer member 1 made of non-adhesive acrylic foam is inserted from the side into the gap between the lower surface of the substrate 100 and the second support member 311 in the region where the electrical component 150 is disposed, 1 (A) and the radiation imaging apparatus shown by (B) were produced.

本実施例の放射線撮像装置は、図1(B)のa,bに示すように、少なくとも電気部品150が配置される領域の基板100の下面と第2の支持部材311との間に間隙を有するよう貼り合わせ部材350が配置されない構成となり、電気部品150が配置される領域の基板100の下面と第2の支持部材311とが接着固定されていない。また、該当部分においては緩衝部材1が挿入されているのみなので、容易に緩衝部材1の取り外しが可能な構成となっている。また、第2の支持部材311が基板100に貼り合わせ部材350により接着されておらず、第1の支持部材301に機械的な接続により固定されている構成であるため、第2の支持部材311の取り外しが容易に行うことができる。   In the radiation imaging apparatus of this embodiment, as shown in FIGS. 1A and 1B, there is a gap between the lower surface of the substrate 100 and the second support member 311 in at least the region where the electric component 150 is disposed. Therefore, the lower surface of the substrate 100 in the region where the electrical component 150 is disposed and the second support member 311 are not bonded and fixed. Moreover, since the buffer member 1 is only inserted in the corresponding part, the buffer member 1 can be easily removed. Further, since the second support member 311 is not bonded to the substrate 100 by the bonding member 350 and is fixed to the first support member 301 by mechanical connection, the second support member 311 is configured. Can be easily removed.

次に、図3(A)〜(C)を用いて、本発明の放射線撮像装置における電気部品の交換接続方法について、詳細に説明する。なお、図1と同一または同等の構成要素については同一符号を付与し、説明を簡略または省略する。   Next, with reference to FIGS. 3A to 3C, a method for exchanging and connecting electrical components in the radiation imaging apparatus of the present invention will be described in detail. In addition, the same code | symbol is provided about the same or equivalent component as FIG. 1, and description is simplified or abbreviate | omitted.

図3(A)は、図1に示される放射線撮像装置における電気部品150の交換準備状態を示す模式的平面図であり、図3(B)は、図3(A)のA−A’における模式的断面図である。   FIG. 3A is a schematic plan view showing a replacement preparation state of the electrical component 150 in the radiation imaging apparatus shown in FIG. 1, and FIG. 3B is a cross-sectional view taken along line AA ′ of FIG. It is typical sectional drawing.

図3(C)は、交換準備状態の放射線撮像装置に新たな電気部品160を接続する方法を示す模式的断面図である。   FIG. 3C is a schematic cross-sectional view illustrating a method of connecting a new electrical component 160 to the radiation imaging apparatus in a replacement preparation state.

図3(A)〜(C)において、160は電気部品150と異なる電気部品、180は基板100の電気接続部の接続電極101と電気部品160の接続電極161とを機械的及び電気的に接続するために用いられる異方性導電フィルム等からなる導電性接着剤である。501は電気部品160と基板100の電気接続部とを接続するために用いられる加熱ヘッド等のプレス部材、502は接続の際に加圧の受けとなるセラミック、ガラス等からなるバックアップステージである。プレス部材501、バックアップステージ502は、接続装置の一部を構成するものである。また、電気接続部に電気部品160を加熱加圧接着する場合には、プレス部材501を加熱するためのヒーター503を有してもよい。505はテフロン(登録商標)シートであり、接続時におけるプレス部材501のヘッド面を均一に押圧するため、また、プレス部材501への異方性導電フィルムの溶着を防止するために用いられる。   3A to 3C, 160 is an electrical component different from the electrical component 150, 180 is mechanically and electrically connected to the connection electrode 101 of the electrical connection portion of the substrate 100 and the connection electrode 161 of the electrical component 160. It is the conductive adhesive which consists of an anisotropic conductive film etc. which are used in order to do. Reference numeral 501 denotes a press member such as a heating head used to connect the electrical component 160 and the electrical connection portion of the substrate 100, and reference numeral 502 denotes a backup stage made of ceramic, glass, or the like that is subjected to pressure during connection. The press member 501 and the backup stage 502 constitute a part of the connection device. In addition, when the electric component 160 is heated and pressurized and bonded to the electric connection portion, a heater 503 for heating the press member 501 may be provided. Reference numeral 505 denotes a Teflon (registered trademark) sheet that is used to uniformly press the head surface of the press member 501 at the time of connection and to prevent the anisotropic conductive film from being welded to the press member 501.

本実施例における電気部品の交換方法は、説明の簡略化のため電気部品150の任意の1つを交換しているが、本発明はこれに限定されるものではなく、複数の電気部品150の交換が必要な場合には、同様の作業を複数回繰り返し行うことにより達成され得る。   In the present embodiment, the electrical component replacement method replaces any one of the electrical components 150 for the sake of simplicity of description, but the present invention is not limited to this, and the plurality of electrical components 150 When replacement is necessary, it can be achieved by repeating the same operation a plurality of times.

以下に、図3(A)〜(C)を用いて、本発明における放射線撮像装置の電気部品の交換接続方法を説明する。ここでは、図3(A)のRに示された箇所に接続されていた電気部品150に不良が発見された場合を例として説明する。   Below, the replacement | exchange method of the electrical component of the radiation imaging device in this invention is demonstrated using FIG. 3 (A)-(C). Here, a case will be described as an example where a defect is found in the electrical component 150 connected to the location indicated by R in FIG.

まず、図3(A)及び(B)に示すように、Rの位置に配置していた電気部品150を基板100の電気接続部より剥がし、基板100上に残った異方性導電フィルムをアセトン、MEK(メチル・エチル・ケトン)等の溶剤を用い除去する。この電気部品150の除去の際に、基板100と第2の支持部材311との間の間隙に挿入されている緩衝部材1及び第2の支持部材311は、除去時の耐衝撃性向上のための台座として機能する。次にRの位置に挿入されていた緩衝部材1を取り出し、更に第1の支持部材301とネジ絞めにより機械的に接続されている第2の支持部材311を第1の支持部材301から取り外す。以上の工程により、放射線撮像装置に新たな電気部品160を交換接続する準備状態が完了する。   First, as shown in FIGS. 3A and 3B, the electrical component 150 arranged at the position R is peeled off from the electrical connection portion of the substrate 100, and the anisotropic conductive film remaining on the substrate 100 is acetone. And using a solvent such as MEK (methyl ethyl ketone). When the electrical component 150 is removed, the buffer member 1 and the second support member 311 inserted in the gap between the substrate 100 and the second support member 311 are used for improving the impact resistance at the time of removal. It functions as a pedestal. Next, the buffer member 1 inserted at the position R is taken out, and the second support member 311 mechanically connected to the first support member 301 by screwing is removed from the first support member 301. Through the above steps, the preparation state for exchanging and connecting a new electrical component 160 to the radiation imaging apparatus is completed.

次に、基板100とプレス部材501の対向面の平面合わせを確認もしくは調整し、新たな異方性導電フィルムを基板100の電気接続部に形成された接続電極101上に貼付け、加熱圧着により転写貼り付けを行う。   Next, the planar alignment of the opposing surfaces of the substrate 100 and the press member 501 is confirmed or adjusted, and a new anisotropic conductive film is pasted on the connection electrode 101 formed on the electrical connection portion of the substrate 100 and transferred by thermocompression bonding. Paste.

次に、図3(C)に示すように、接続電極101の上部にプレス部材501を配置し、また、下部にバックアップ502が配置されるようセットし、接続電極101と新たに接続される電気部品160に設けられた接続電極161が対向するようにアライメント配置し仮固定する。ここで仮固定とは、異方性導電フィルムのタック性もしくは配線部材を配置調整する為のステージの吸着や機械的な圧力より保持することである。   Next, as shown in FIG. 3C, the press member 501 is disposed above the connection electrode 101, and the backup 502 is disposed below the connection electrode 101. Alignment is arranged and temporarily fixed so that the connection electrodes 161 provided on the component 160 face each other. Here, the temporary fixation means holding by the tackiness of the anisotropic conductive film or the adsorption of the stage for adjusting the arrangement of the wiring member or the mechanical pressure.

仮固定の後、プレス部材510を下降させ、所望の温度・圧力にて加熱圧着することにより上下の接続電極の電気接続がなされるとともに電気部品の接着固定をする。本実施例では、実効温度170℃、圧力2.5MPa、時間15秒の条件で行った。   After the temporary fixing, the press member 510 is lowered, and the upper and lower connection electrodes are electrically connected and the electrical components are bonded and fixed by thermocompression bonding at a desired temperature and pressure. In this example, the measurement was performed under the conditions of an effective temperature of 170 ° C., a pressure of 2.5 MPa, and a time of 15 seconds.

電気部品160の接続終了後、第1の支持部材301に第2の支持部材311をネジ締めにて機械的に接続し、更に先に取り外した緩衝部材1を再び基板100と第2の支持部材311との間の間隙に挿入し、電気部品150と電気部品160の交換作業が完了した放射線撮像装置を得ることができる。   After the connection of the electrical component 160 is completed, the second support member 311 is mechanically connected to the first support member 301 by screw tightening, and the buffer member 1 removed earlier is again connected to the substrate 100 and the second support member. The radiation imaging apparatus can be obtained in which the replacement operation of the electrical component 150 and the electrical component 160 is completed by inserting the gap between the electrical component 150 and the electrical component 160.

本実施例における放射線撮像装置の電気部品の交換接続においては、交換接続時に少なくとも電気接続部を含む領域における基板100の下部に直接バックアップ502を配置することが容易に可能となり、そのため交換接続時に交換位置の剛性が確保され、交換接続時の基板100とプレス部材501でのずれや、それに伴う基板100の電気接続部の接続電極101と電気部品160の接続電極161における接続不良を防止することができる。   In the exchange connection of the electrical components of the radiation imaging apparatus according to the present embodiment, it is possible to easily arrange the backup 502 directly below the substrate 100 in the region including at least the electrical connection portion at the time of exchange connection. The rigidity of the position is ensured, and the displacement between the substrate 100 and the press member 501 at the time of replacement connection and the connection failure between the connection electrode 101 of the electrical connection portion of the substrate 100 and the connection electrode 161 of the electrical component 160 can be prevented. it can.

(実施例2)
本実施例は、図4(A)〜(C)に示される放射線撮像装置の例である。
(Example 2)
A present Example is an example of the radiographic imaging apparatus shown by FIG. 4 (A)-(C).

図4(A)〜(C)は、本実施例における放射線撮像装置の構成を示す概略構成図であり、図4(A)には本実施例における放射線撮像装置の模式的平面図を、図4(B)には図4(A)のA−A’における模式的断面図を、図4(C)には図1(A)のB−B’における模式的断面図をそれぞれ示す。なお、前述された構成要素と同一または同等の構成要素は、同一符号を付与し、説明を簡略または省略する。   4A to 4C are schematic configuration diagrams illustrating the configuration of the radiation imaging apparatus according to the present embodiment. FIG. 4A is a schematic plan view of the radiation imaging apparatus according to the present embodiment. 4B is a schematic cross-sectional view taken along line AA ′ of FIG. 4A, and FIG. 4C is a schematic cross-sectional view taken along line BB ′ of FIG. Note that the same or equivalent components as those described above are denoted by the same reference numerals, and description thereof is simplified or omitted.

実施例2において、実施例1と同様に、ガラスからなる基板100上に画素部110、駆動配線、信号配線、バイアス配線、及び電気接続部が設けられており、基板100と画素部110、駆動配線、信号配線、バイアス配線、及び電気接続部によりセンサーパネル10が構成されている。また、基板100の周辺に形成された電気接続部上には、TCPからなる電気部品150が接続されている。また、基板100の画素部110上には、PETにGOSを含んだバインダーを塗布して形成されたシンチレータ200が、アクリル系の接着剤250によって接着固定され配されている。また、基板100の下にはSUSからなる第1の支持部材301が配置され、粘着性アクリルフォームからなるシート状のからなる貼り合わせ部材350により粘着固定されている。第1の支持部材302は、1つの電気接続部を含む領域をすべて除いた基板100の領域に応じて配され、1つの電気接続部を含む領域をすべて除いた基板100の形状と概略同じ形状を有する。更に、1つの電気接続部を含む領域に対応して、第1の支持部材302に機械的に接続された第2の支持部材312が配置されており、第1の支持部材302と第2の支持部材312とが機械的に接続されて支持部材300を構成している。第2の支持部材312は、1つの電気接続部を含む基板100の領域の形状と概略同じ形状を有する。貼り合わせ部材350は、基板100の電気部品150と電気的に接続される電気接続部を少なくとも含む電気接続部形成領域と第2の支持部材312の間に間隙を有して配されており、間隙には、接着性を有さない弾性体であるアクリル樹脂からなる緩衝部材2が配されている。   In the second embodiment, similarly to the first embodiment, the pixel portion 110, the drive wiring, the signal wiring, the bias wiring, and the electrical connection portion are provided on the substrate 100 made of glass. The sensor panel 10 is configured by the wiring, the signal wiring, the bias wiring, and the electrical connection portion. In addition, an electrical component 150 made of TCP is connected to an electrical connection portion formed around the substrate 100. On the pixel portion 110 of the substrate 100, a scintillator 200 formed by applying a binder containing GOS to PET is bonded and fixed with an acrylic adhesive 250. Further, a first support member 301 made of SUS is disposed under the substrate 100, and is adhesively fixed by a bonding member 350 made of a sheet shape made of adhesive acrylic foam. The first support member 302 is arranged in accordance with the region of the substrate 100 excluding all regions including one electrical connection portion, and is substantially the same shape as the shape of the substrate 100 excluding all regions including one electrical connection portion. Have Further, a second support member 312 mechanically connected to the first support member 302 is disposed corresponding to a region including one electrical connection portion, and the first support member 302 and the second support member 302 are disposed. The support member 312 is mechanically connected to form the support member 300. The second support member 312 has substantially the same shape as the shape of the region of the substrate 100 including one electrical connection portion. The bonding member 350 is disposed with a gap between the second connection member 312 and the electrical connection portion formation region including at least the electrical connection portion that is electrically connected to the electrical component 150 of the substrate 100. A buffer member 2 made of an acrylic resin that is an elastic body having no adhesiveness is disposed in the gap.

本実施例では、基板100の各辺に設けられるそれぞれの電気部品150が接続される領域毎に第2の支持部材312が配置されるとともに、基板100と第2の支持部材312との間の間隙が準備され、それぞれの間隙にそれぞれの電気部品150に対応して緩衝部材2が配置されるよう構成されている。   In the present embodiment, a second support member 312 is disposed for each region to which each electrical component 150 provided on each side of the substrate 100 is connected, and between the substrate 100 and the second support member 312. A gap is prepared, and the buffer member 2 is arranged in each gap corresponding to each electric component 150.

また、本実施例における電気部品150の交換接続作業も、図3にて示された実施例1の交換接続作業と同様に行うことが可能である。   In addition, the replacement connection work of the electrical component 150 in the present embodiment can be performed in the same manner as the replacement connection work of the first embodiment shown in FIG.

本実施例の放射線撮像装置において、電気部品150の接続部単位で緩衝部材2及び第2の支持部材312が接着されずに配置されているので、電気部品150の交換接続作業時において、緩衝部材2の取り出し及び第2の支持部材312の取り外しがより容易に行うことが可能となり、より作業性が向上する。また、交換作業後に新たな緩衝部材を準備、挿入する際に、各辺一括で設けられた緩衝部材1と比べて用いられる緩衝部材が小さくなるため、交換接続作業を安価に行うことが可能となる。   In the radiation imaging apparatus of the present embodiment, since the buffer member 2 and the second support member 312 are arranged without being bonded in units of connection parts of the electric component 150, the buffer member is used when the electric component 150 is exchanged and connected. 2 can be taken out and the second support member 312 can be removed more easily, and the workability is further improved. In addition, when a new buffer member is prepared and inserted after the replacement work, the buffer member used is smaller than the buffer member 1 provided for each side collectively, so that the replacement connection work can be performed at a low cost. Become.

(実施例3)
本実施例は、図5に示される放射線撮像装置の例である。
(Example 3)
This embodiment is an example of the radiation imaging apparatus shown in FIG.

図5は、本実施例における放射線撮像装置の模式的断面図を示す。なお、前述された構成要素と同一または同等の構成要素は、同一符号を付与し、説明を簡略または省略する。   FIG. 5 is a schematic cross-sectional view of the radiation imaging apparatus in the present embodiment. Note that the same or equivalent components as those described above are denoted by the same reference numerals, and description thereof is simplified or omitted.

実施例3において、実施例1と同様に、ガラスからなる基板100上に画素部110、駆動配線、信号配線、バイアス配線、及び電気接続部が設けられており、基板100と画素部110、駆動配線、信号配線、バイアス配線、及び電気接続部によりセンサーパネル10が構成されている。また、基板100の周辺に形成された電気接続部上には、TCPからなる電気部品150が接続されている。また、基板100の画素部110上には、PETにGOSを含んだバインダーを塗布して形成されたシンチレータ200が、アクリル系の接着剤250によって接着固定され配されている。また、基板100の下にはSUSからなる第1の支持部材303が配置され、粘着性アクリルフォームからなるシート状の貼り合わせ部材350により接着固定されている。第1の支持部材303は、基板100の1辺に配されたすべての電気接続部を含む領域を除いた基板100の領域に応じて配され、基板100の1辺に配されたすべての電気接続部を含む領域を除いた基板100の形状と概略同じ形状を有する。更に、基板100の1辺に配されたすべての電気接続部を含む領域に対応して、第1の支持部材303に機械的に接続された第2の支持部材313が配置されており、第1の支持部材303と第2の支持部材313とが機械的に接続されて支持部材300を構成している。第2の支持部材313は、基板100の1辺に配されたすべての電気接続部を含む領域の形状と概略同じ形状を有する。貼り合わせ部材350は、基板100の電気部品150と電気的に接続される電気接続部を少なくとも含む電気接続部形成領域と第2の支持部材313の間に間隙を有して配されており、間隙には、接着性を有さない弾性体であるアクリル樹脂からなる緩衝部材1が配されている。   In the third embodiment, as in the first embodiment, the pixel portion 110, the drive wiring, the signal wiring, the bias wiring, and the electrical connection portion are provided on the substrate 100 made of glass, and the substrate 100 and the pixel portion 110 are driven. The sensor panel 10 is configured by the wiring, the signal wiring, the bias wiring, and the electrical connection portion. In addition, an electrical component 150 made of TCP is connected to an electrical connection portion formed around the substrate 100. On the pixel portion 110 of the substrate 100, a scintillator 200 formed by applying a binder containing GOS to PET is bonded and fixed with an acrylic adhesive 250. Further, a first support member 303 made of SUS is disposed under the substrate 100, and is bonded and fixed by a sheet-like bonding member 350 made of adhesive acrylic foam. The first support member 303 is arranged according to the region of the substrate 100 except for the region including all the electrical connection portions arranged on one side of the substrate 100, and all the electricity arranged on one side of the substrate 100. It has substantially the same shape as the shape of the substrate 100 excluding the region including the connecting portion. Further, a second support member 313 mechanically connected to the first support member 303 is disposed corresponding to a region including all the electrical connection portions arranged on one side of the substrate 100, and The first support member 303 and the second support member 313 are mechanically connected to constitute the support member 300. The second support member 313 has approximately the same shape as the shape of the region including all the electrical connection portions arranged on one side of the substrate 100. The bonding member 350 is disposed with a gap between the second connecting member 313 and the electric connecting portion forming region including at least the electric connecting portion that is electrically connected to the electric component 150 of the substrate 100. A buffer member 1 made of an acrylic resin that is an elastic body having no adhesiveness is disposed in the gap.

本実施例において、第2の支持部材313は、第1の支持部材303を保持固定する筐体であり、SUSなどの金属からなり、放射線撮像ユニットのフレームや外装カバーに相当するものである。   In the present embodiment, the second support member 313 is a housing that holds and fixes the first support member 303, is made of metal such as SUS, and corresponds to a frame or an exterior cover of the radiation imaging unit.

本実施例においても、少なくとも電気部品150が配置される領域の基板100の下面と第2の支持部材313との間に間隙を有するよう貼り合わせ部材350が配置されない構成となり、電気部品150が配置される領域の基板100の下面と第2の支持部材313とが接着固定されていない。また、該当部分においては緩衝部材1が挿入されているのみなので、容易に緩衝部材1の取り外しが可能な構成となっている。また、第2の支持部材313が基板100に貼り合わせ部材350により接着されておらず、第1の支持部材303に機械的な接続により固定されている構成であるため、第2の支持部材313の取り外しが容易に行うことができる。また、交換接続作業時において、第2の支持部材313及び緩衝部材1の取り外しが容易な構造となるため、実施例1と同様に電気部品の交換接続作業が容易に行うことができる。   Also in this embodiment, the bonding member 350 is not disposed so that there is a gap between the lower surface of the substrate 100 and the second support member 313 in the region where at least the electrical component 150 is disposed, and the electrical component 150 is disposed. The lower surface of the substrate 100 and the second support member 313 are not fixedly bonded to each other. Moreover, since the buffer member 1 is only inserted in the corresponding part, the buffer member 1 can be easily removed. Further, since the second support member 313 is not bonded to the substrate 100 by the bonding member 350 and is fixed to the first support member 303 by mechanical connection, the second support member 313 is used. Can be easily removed. In addition, since the second support member 313 and the buffer member 1 can be easily detached during the exchange connection work, the electrical component exchange connection work can be easily performed as in the first embodiment.

(実施例4)
本実施例は、図6に示される放射線撮像装置の例である。
Example 4
A present Example is an example of the radiation imaging device shown by FIG.

図6は、本実施例における放射線撮像装置の端部を拡大した模式的断面図を示す。なお、前述された構成要素と同一または同等の構成要素は、同一符号を付与し、説明を簡略または省略する。   FIG. 6 is a schematic cross-sectional view in which an end portion of the radiation imaging apparatus in the present embodiment is enlarged. Note that the same or equivalent components as those described above are denoted by the same reference numerals, and description thereof is simplified or omitted.

本実施例においては、第1の支持部材304と第2の支持部材314を、勘合により機械的に接続して支持部材300を構成している。本実施例では、基板100の周辺に添って勘合形状を作り組上げるよう形成している。また、第1の支持部材304及び第2の支持部材314の側面に垂直な方向に勘合形状を形成することにより、1つの電気接続部を含む領域毎に対応した実施例2で用いた第1の支持部材302と第2の支持部材312とを同様に勘合により機械的に接続することが可能である。   In the present embodiment, the support member 300 is configured by mechanically connecting the first support member 304 and the second support member 314 by fitting. In this embodiment, the fitting shape is formed along the periphery of the substrate 100 so as to be assembled. Also, by forming a fitting shape in a direction perpendicular to the side surfaces of the first support member 304 and the second support member 314, the first used in the second embodiment corresponding to each region including one electrical connection portion. Similarly, the support member 302 and the second support member 312 can be mechanically connected by fitting.

本実施例においても、基板100の下面と第2の支持部材314との間に間隙を有するよう貼り合わせ部材350が配置されない構成となり、電気部品150が配置される領域の基板100の下面と第2の支持部材314とが接着固定されていない。また、該当部分においては緩衝部材1が挿入されているのみなので、容易に緩衝部材1の取り外しが可能な構成となっている。また、第2の支持部材314が基板100に貼り合わせ部材350により接着されておらず、第1の支持部材304に機械的な接続により固定されている構成であるため、第2の支持部材314の取り外しが容易に行うことができる。また、交換接続作業時において、第2の支持部材314及び緩衝部材1の取り外しが容易な構造となるため、実施例1と同様に電気部品の交換接続作業が容易に行うことができる。   Also in the present embodiment, the bonding member 350 is not disposed so as to have a gap between the lower surface of the substrate 100 and the second support member 314, and the lower surface of the substrate 100 in the region where the electrical component 150 is disposed The two support members 314 are not bonded and fixed. Moreover, since the buffer member 1 is only inserted in the corresponding part, the buffer member 1 can be easily removed. Further, since the second support member 314 is not bonded to the substrate 100 by the bonding member 350 and is fixed to the first support member 304 by mechanical connection, the second support member 314 is configured. Can be easily removed. In addition, since the second support member 314 and the buffer member 1 can be easily detached during the exchange connection work, the electric component exchange connection work can be easily performed as in the first embodiment.

なお、実施例において緩衝材部材(1及び2)として接着性を有さないアクリル樹脂を用い説明したが、第2の支持部材(311、312、313並びに314)に接する面に粘着性を持たせた片面粘着アクリルフォームからなるシート状の緩衝部材を用いて構成することできる。この場合、各実施例において、予め第2の支持部材に緩衝部材を貼付け接着固定し、第2の支持部材を第1の支持部材に固定することで製作可能であり、前述の実施例同様に基板100と緩衝部材及び第2の支持部材が接着固定されない構成とすることができ、同様の効果が得られる。   In addition, although the acrylic resin which does not have adhesiveness was demonstrated as a buffer material member (1 and 2) in the Example, it has adhesiveness in the surface which contact | connects a 2nd support member (311, 312, 313, and 314). It can comprise using the sheet-like shock absorbing member which consists of a letting single-sided adhesive acrylic foam. In this case, in each embodiment, it can be manufactured by pasting and fixing the buffer member to the second support member in advance, and fixing the second support member to the first support member. It can be set as the structure which the board | substrate 100, a buffer member, and a 2nd supporting member are not adhesive-fixed, and the same effect is acquired.

(応用例)
以下に、本発明による放射線撮像装置のX線診断システムへの応用例を説明する。図5に、本発明による放射線撮像装置のX線診断システムへの応用例を示す。
(Application examples)
Below, the application example to the X-ray diagnostic system of the radiation imaging device by this invention is demonstrated. FIG. 5 shows an application example of the radiation imaging apparatus according to the present invention to an X-ray diagnostic system.

X線チューブ6050で発生したX線6060は患者あるいは被験者6061の胸部6062を透過し、図3に示したような放射線撮像装置(イメージセンサ)6040に入射する。この入射したX線には患者6061の体内部の情報が含まれている。X線の入射に対応してシンチレータ(蛍光体層)は発光し、これをセンサーパネルの光電変換素子が光電変換して、電気的情報を得る。この情報はデジタルに変換され信号処理手段となるイメージプロセッサ6070により画像処理され制御室の表示手段となるディスプレイ6080で観察できる。   X-rays 6060 generated by the X-ray tube 6050 pass through the chest 6062 of the patient or subject 6061 and enter a radiation imaging apparatus (image sensor) 6040 as shown in FIG. This incident X-ray includes information inside the body of the patient 6061. The scintillator (phosphor layer) emits light in response to the incidence of X-rays, and this is photoelectrically converted by the photoelectric conversion element of the sensor panel to obtain electrical information. This information can be digitally converted and image-processed by an image processor 6070 serving as a signal processing means and observed on a display 6080 serving as a display means in a control room.

また、この情報は電話回線6090等の伝送処理手段により遠隔地へ転送でき、別の場所のドクタールームなどの表示手段となるディスプレイ6081に表示もしくは光ディスク等の記録手段に保存することができ、遠隔地の医師が診断することも可能である。また記録手段となるフィルムプロセッサ6100によりフィルム6110に記録することもできる。   Further, this information can be transferred to a remote location by transmission processing means such as a telephone line 6090 and can be displayed on a display 6081 serving as a display means such as a doctor room in another place or stored in a recording means such as an optical disk. It is also possible for a local doctor to make a diagnosis. Moreover, it can also record on the film 6110 by the film processor 6100 used as a recording means.

本発明は、薄膜半導体素子を用いたアクティブマトリクスパネル、該アクティブマトリクスパネルを用いた2次元エリアセンサー、該2次元エリアセンサーを用いた放射線撮像装置、及び該放射線撮像装置を用いた医療診断機器または非破壊検査機器等に用いられるものである。   The present invention relates to an active matrix panel using a thin film semiconductor element, a two-dimensional area sensor using the active matrix panel, a radiation imaging apparatus using the two-dimensional area sensor, and a medical diagnostic apparatus using the radiation imaging apparatus or Used for non-destructive inspection equipment.

(A)は、本発明の実施形態及び実施例1に係る放射線撮像装置の模式的平面図である。(B)は、図1(A)のA−A’における模式的断面図である。(C)は、図1(A)のB−B’における模式的断面図である。1A is a schematic plan view of a radiation imaging apparatus according to an embodiment of the present invention and Example 1. FIG. FIG. 2B is a schematic cross-sectional view taken along line A-A ′ of FIG. FIG. 2C is a schematic cross-sectional view taken along B-B ′ in FIG. (A)〜(E)は、本発明の実施形態及び実施例1に係る放射線検出装置の製造方法を説明する模式的断面図である。(A)-(E) are typical sectional drawings explaining the manufacturing method of the radiation detection apparatus which concerns on embodiment and Example 1 of this invention. (A)〜(C)は、本発明の実施形態に係る放射線撮像装置の電気部品交換接続方法を説明する模式的断面図である。(A)-(C) are typical sectional drawings explaining the electrical component replacement | exchange connection method of the radiation imaging device which concerns on embodiment of this invention. (A)は、本発明の実施例2に係る放射線撮像装置の模式的平面図である。(B)は、図4(A)のA−A’における模式的断面図である。(C)は、図4(A)のB−B’における模式的断面図である。(A) is a schematic plan view of a radiation imaging apparatus according to Embodiment 2 of the present invention. FIG. 4B is a schematic cross-sectional view taken along line A-A ′ of FIG. FIG. 4C is a schematic cross-sectional view taken along the line B-B ′ in FIG. 本発明の実施例2に係る放射線撮像装置の模式的断面図である。It is typical sectional drawing of the radiation imaging device which concerns on Example 2 of this invention. 本発明の実施例3に係る放射線撮像装置の端部を拡大した模式的断面図である。It is typical sectional drawing which expanded the edge part of the radiation imaging device which concerns on Example 3 of this invention. 本発明の応用例に係る放射線撮影システムの構成を示す概念図である。It is a conceptual diagram which shows the structure of the radiography system which concerns on the application example of this invention. (A)は、従来例の放射線撮像装置を示す模式的平面図である。(B)は、図6(A)のA−A’における模式的断面図である。(A) is a typical top view which shows the radiation imaging device of a prior art example. FIG. 6B is a schematic cross-sectional view taken along line A-A ′ of FIG.

符号の説明Explanation of symbols

1,2 緩衝部材
10 センサーパネル
20 放射線撮像パネル
100 基板
101 基板の接続電極
110 画素部
150,160 電気部品
161 電気部品の接続電極
180 導電性接着剤
200 シンチレータ
250 接着剤
300 支持部材
301,302,303,304 第1の支持部材
311,312,313,314 第2の支持部材
350 貼り合わせ部材
501 プレス部材
502 バックアップ
503 ヒーター
505 テフロン(登録商標)シート
DESCRIPTION OF SYMBOLS 1, 2 Buffer member 10 Sensor panel 20 Radiation imaging panel 100 Board | substrate 101 Connection electrode of a board | substrate 110 Pixel part 150,160 Electrical component 161 Connection electrode of an electrical component 180 Conductive adhesive 200 Scintillator 250 Adhesive 300 Support member 301,302, 303, 304 First support member 311, 312, 313, 314 Second support member 350 Bonding member 501 Press member 502 Backup 503 Heater 505 Teflon (registered trademark) sheet

Claims (17)

複数の半導体素子が配された半導体素子部と、該半導体素子部の周囲に配され、前記半導体素子部に配線を介して電気的に接続された電気接続部と、を有する基板と、
該電気接続部に電気的に接続された電気部品と、
前記基板と貼り合わせ部材を介して接着された前記基板を支持する支持部材と、を有する半導体装置において、
前記支持部材は、少なくとも前記電気接続部を含む領域を除いた領域において前記基板に前記貼り合わせ部材を介して接着される第1の支持部材と、少なくとも前記電気接続部を含む領域の前記基板に応じて前記第1の支持部材に機械的に接続される第2の支持部材と、を有することを特徴とする半導体装置。
A substrate having a semiconductor element portion in which a plurality of semiconductor elements are disposed, and an electrical connection portion disposed around the semiconductor element portion and electrically connected to the semiconductor element portion via a wiring;
An electrical component electrically connected to the electrical connection;
In a semiconductor device having a support member that supports the substrate bonded to the substrate via a bonding member,
The support member includes a first support member that is bonded to the substrate through the bonding member in a region excluding at least the region including the electrical connection portion, and the substrate in a region including at least the electrical connection portion. And a second support member mechanically connected to the first support member.
前記基板と前記第2の支持部材の間に緩衝部材を更に有することを特徴とする請求項1に記載の半導体装置。   The semiconductor device according to claim 1, further comprising a buffer member between the substrate and the second support member. 前記緩衝部材は、少なくとも前記基板に接する面が非接着性の弾性体であることを特徴とする請求項2に記載の半導体装置。   The semiconductor device according to claim 2, wherein the buffer member is a non-adhesive elastic body at least in contact with the substrate. 前記第1の支持部材は、少なくとも前記電気接続部を含む領域を除いた前記基板と概略等しい形状を有し、前記第2の支持部材は、少なくとも前記電気接続部を含む領域と概略等しい形状を有することを特徴とする請求項1〜3のいずれか1項に記載の半導体装置。   The first support member has substantially the same shape as the substrate excluding at least the region including the electrical connection portion, and the second support member has a shape approximately equal to the region including at least the electrical connection portion. The semiconductor device according to claim 1, wherein the semiconductor device is provided. 前記第2の支持部材は、ねじあるいは勘合により前記第1の支持部材に機械的に接続されていることを特徴とする請求項1〜4のいずれか1項に記載の半導体装置。   The semiconductor device according to claim 1, wherein the second support member is mechanically connected to the first support member by a screw or fitting. 放射線を電気信号に変換する変換素子の複数が配された画素部と、該画素部の周囲に配され前記画素部に配線を配して電気的に接続された電気接続部と、を有する基板と、
該電気接続部に電気的に接続された電気部品と、
前記基板と貼り合わせ部材を介して接着された前記基板を支持する支持部材と、を有する放射線撮像装置において、
前記支持部材は、少なくとも前記電気接続部を含む領域を除いた領域において前記基板に前記貼り合わせ部材を介して接着される第1の支持部材と、少なくとも前記電気接続部を含む領域の前記基板に応じて前記第1の支持部材に機械的に接続される第2の支持部材と、を有することを特徴とする放射線撮像装置。
A substrate having a pixel portion provided with a plurality of conversion elements for converting radiation into an electrical signal, and an electrical connection portion disposed around the pixel portion and electrically connected by wiring to the pixel portion. When,
An electrical component electrically connected to the electrical connection;
In a radiation imaging apparatus having a support member that supports the substrate bonded to the substrate via a bonding member,
The support member includes a first support member that is bonded to the substrate through the bonding member in a region excluding at least the region including the electrical connection portion, and the substrate in a region including at least the electrical connection portion. And a second support member mechanically connected to the first support member.
前記基板と前記第2の支持部材の間に緩衝部材を更に有することを特徴とする請求項6に記載の放射線撮像装置。   The radiation imaging apparatus according to claim 6, further comprising a buffer member between the substrate and the second support member. 前記緩衝部材は、少なくとも前記基板に接する面が非接着性の弾性体であることを特徴とする請求項7に記載の放射線撮像装置。   The radiation imaging apparatus according to claim 7, wherein the buffer member is a non-adhesive elastic body at least in contact with the substrate. 前記変換素子は、光電変換素子と、該光電変換素子に応じて設けられたスイッチ素子と、少なくとも前記光電変換素子上に配され、放射線を前記光電変換素子が感知可能な光に変換する波長変換体と、を有することを特徴とする請求項6〜8のいずれか1項に記載の放射線撮像装置。   The conversion element is a photoelectric conversion element, a switch element provided in accordance with the photoelectric conversion element, and wavelength conversion that is disposed on at least the photoelectric conversion element and converts radiation into light that can be sensed by the photoelectric conversion element. The radiation imaging apparatus according to claim 6, further comprising: a body. 前記電気部品は、導電性接着剤を介して前記電気接続部に接続されることを特徴とする請求項6〜9のいずれか1項に記載の放射線撮像装置。   The radiation imaging apparatus according to claim 6, wherein the electrical component is connected to the electrical connection portion via a conductive adhesive. 前記緩衝部材は、前記電気部品の複数に応じて前記基板と前記第2の支持部材との間に配されることを特徴とする請求項7〜10のいずれか1項に記載の放射線撮像装置。   The radiation imaging apparatus according to claim 7, wherein the buffer member is disposed between the substrate and the second support member in accordance with a plurality of the electrical components. . 前記緩衝部材は、1つの前記電気部品に応じて前記基板と前記第2の支持部材との間に配されることを特徴とする請求項7〜10のいずれか1項に記載の放射線撮像装置。   The radiation imaging apparatus according to claim 7, wherein the buffer member is disposed between the substrate and the second support member in accordance with one electric component. . 前記第1の支持部材は、少なくとも前記電気接続部を含む領域を除いた前記基板と概略等しい形状を有し、前記第2の支持部材は、少なくとも前記電気接続部を含む領域と概略等しい形状を有することを特徴とする請求項6〜12のいずれか1項に記載の放射線撮像装置。   The first support member has substantially the same shape as the substrate excluding at least the region including the electrical connection portion, and the second support member has a shape approximately equal to the region including at least the electrical connection portion. The radiation imaging apparatus according to claim 6, wherein the radiation imaging apparatus is provided. 前記第2の支持部材は、ねじ、勘合、○○のいずれかにより前記第1の支持部材に機械的に接続されていることを特徴とする請求項6〜13のいずれか1項に記載の放射線撮像装置。   The said 2nd supporting member is mechanically connected to the said 1st supporting member by either of a screw, a fitting, and (circle), The one of Claims 6-13 characterized by the above-mentioned. Radiation imaging device. 複数の半導体素子を含む半導体素子部を有する基板上に、前記半導体素子部の周囲の前記基板上に設けられた電気接続部を介して電気部品を接続する工程と、
少なくとも前記電気接続部を含む領域を除いた領域において、前記基板と貼り合わせ部材を介して第1の支持部材を接着する工程と、
少なくとも前記電気接続部を含む領域に応じて、前記第1の支持部材に第2の支持部材を機械的に接続する工程と、
を有する半導体装置の製造方法。
Connecting an electrical component on a substrate having a semiconductor element portion including a plurality of semiconductor elements via an electrical connection portion provided on the substrate around the semiconductor element portion;
Bonding the first support member via the substrate and the bonding member at least in a region excluding the region including the electrical connection portion;
Mechanically connecting a second support member to the first support member according to at least a region including the electrical connection portion;
A method for manufacturing a semiconductor device comprising:
前記基板と前記第2の支持部材との間に緩衝部材を配置する工程と、を更に有することを特徴とする半導体装置の製造方法。   And a step of disposing a buffer member between the substrate and the second support member. 複数の半導体素子が配された半導体素子部と、該半導体素子部の周囲に配され該半導体素子部に電気的に接続された電気接続部と、を有する基板と、該電気接続部に接続された電気部品と、少なくとも前記電気接続部を含む領域を除いた領域において前記基板に前記貼り合わせ部材を介して接着された第1の支持部材と、少なくとも前記電気接続部を含む領域の前記基板に応じて前記第1の支持部材に機械的に接続された第2の支持部材と、前記基板と前記第2の支持部材との間に配置された緩衝部材と、を有する半導体装置の製造方法であって、
前記電気接続部から前記電気部品を取り外す工程と、
前記電気部品が取り外された前記電気接続部に応じた前記緩衝部材と前記第2の支持部材と取り外す工程と、
前記電気部品が取り外された前記電気接続部に新たな電気部品を接続する工程と、
該新たな電気部品が接続された前記電気接続部に応じて前記第1の支持部材に第2の支持部材を機械的に接続し、前記基板と該第2の支持部材との間に緩衝部材を配置する工程と、
を有することを特徴とする半導体装置の製造方法。
A substrate having a semiconductor element portion in which a plurality of semiconductor elements are arranged, an electrical connection portion arranged around the semiconductor element portion and electrically connected to the semiconductor element portion, and connected to the electrical connection portion The first supporting member bonded to the substrate via the bonding member in the region excluding the region including at least the electrical connection portion, and the substrate in the region including at least the electrical connection portion. Accordingly, a method of manufacturing a semiconductor device, comprising: a second support member mechanically connected to the first support member; and a buffer member disposed between the substrate and the second support member. There,
Removing the electrical component from the electrical connection;
Removing the buffer member and the second support member according to the electrical connection part from which the electrical component has been removed;
Connecting a new electrical component to the electrical connection from which the electrical component has been removed;
A second support member is mechanically connected to the first support member according to the electrical connection portion to which the new electrical component is connected, and a buffer member is provided between the substrate and the second support member. A step of arranging
A method for manufacturing a semiconductor device, comprising:
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