JP2006147712A - Thin film device, its fabrication process, integrated circuit, matrix device, electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To ensure good bonding state among a plurality of thin film element layers and to facilitate electrical connection between respective layers. <P>SOLUTION: The thin film device comprises: a first thin film element layer (13); a first electrode terminal (16); a first nonconduction terminal (17); a second thin film element layer (23); a second electrode terminal (26); and a second nonconduction terminal (27). The second electrode terminal and the second nonconduction terminal have portions penetrating the second thin film element layer, respective portions exposed to the upper and lower surfaces of the second thin film element layer, respectively. The first and second thin film element layers are bonded electrically and physically by bonding the lower exposed portions of the first electrode terminal and the first nonconduction terminal, and the lower exposed portions of the second electrode terminal and the second nonconduction terminal, respectively. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a thin film device configured by laminating circuit layers including thin film elements such as thin film transistors.

  Development of thin film devices (so-called three-dimensional devices) formed by laminating thin film element layers including thin film elements such as thin film transistors has been underway. For example, in Japanese Patent Application Laid-Open No. 11-251517 (Patent Document 1), a transfer layer including a thin film element is formed on a transfer source substrate (transfer source substrate), and then the transfer layer is used as a transfer destination. A method of manufacturing a three-dimensional device by applying a technique of transferring onto a substrate is disclosed. In such a three-dimensional device, high integration, high density, elimination of inconveniences related to wiring such as signal delay, etc., which cannot be achieved by conventional planar (two-dimensional) layout devices, or power consumption Many benefits are expected, such as reducing

  When a thin film device is formed by the transfer technique described above, a problem due to poor connection or poor adhesion at the time of bonding tends to occur when the other thin film element layer is transferred to one thin film element layer. These defects are due to the fact that the bonding force between the thin film element layers cannot be secured sufficiently mainly due to the effects of warpage, deflection, waviness, and insufficient flattening of the interlayer insulating film of the substrate supporting the thin film element layer. This is due to On the other hand, when the thin film element layers are bonded to each other using an insulating thermosetting resin or the like, it is easy to ensure the bonding force between the layers. However, when this method is adopted, the thermal expansion coefficients of the thermosetting resin and the thin film element layer are greatly different, so that the thin film element layer may crack due to the shrinkage of the thermosetting resin. Yes, not preferred. In particular, such a problem becomes conspicuous when it is desired to stack more (for example, three or more layers) thin film element layers. Further, when two or more thin film element layers are stacked, there is a problem that it is not easy to achieve electrical connection between the thin film element layers.

JP-A-11-251517

  Therefore, the present invention secures a good bonding state between a plurality of thin film element layers and facilitates electrical connection between the respective layers in a three-dimensional device formed by laminating thin film element layers. The purpose is to provide a technology that makes it possible.

  The first aspect of the present invention is a thin film device formed by laminating thin film element layers including thin film elements, the first thin film element layer formed on a predetermined surface, and the first thin film element layer. A first electrode terminal formed on the upper side and electrically connected to the first thin film element layer; and formed on the upper side of the first thin film element layer, wherein the first thin film element layer is electrically A first non-conducting terminal not connected to the first electrode terminal, a second thin film element layer formed above the first electrode terminal and the first non-conducting terminal, and a penetrating through the second thin film element layer And an upper exposed portion exposed on the upper surface of the second thin film element layer, and a lower exposed portion exposed on the lower surface of the second thin film element layer. Connected second electrode terminal, a through portion penetrating the second thin film element layer, and the second thin film element layer A second non-conductive terminal that is electrically connected to the second thin film element layer, the upper exposed part exposed on the upper surface, and a lower exposed part exposed on the lower surface of the second thin film element layer. And joining each of the first electrode terminal and the first non-conduction terminal to the lower exposed portion of each of the second electrode terminal and the second non-conduction terminal. Thus, the thin film device is configured to achieve electrical and physical bonding between the first and second thin film element layers.

  Here, the “predetermined surface” may be any surface as long as a thin film device can be formed, and preferably the surface of a substrate made of glass or the like is used. It may also be applicable to any surface that constitutes (on the surface of a watch, on the surface of an air conditioner, on a printed circuit board, etc.), or on the surface of a structure such as a wall, pillar, ceiling, or window glass. The term “thin film element” refers to a general element that is formed using a thin film and performs a predetermined function. The content of the element is not particularly limited. For example, an active element such as a thin film transistor or a thin film diode, or a resistor is used. Circuit elements such as passive elements are included.

  According to such a configuration, in addition to the electrode terminals that are difficult to secure a large area due to restrictions in device design, non-conductive terminals that have a high degree of freedom in layout and are relatively easy to ensure a large area are provided. It is possible to obtain a sufficient bonding force between the element layers. Therefore, in a three-dimensional device formed by laminating thin film element layers, it is possible to ensure a good bonding state between a plurality of thin film element layers. In addition, since the electrode terminal and the non-conductive terminal are exposed on both the upper side and the lower side of the second thin film element layer, in particular, when more thin film element layers (for example, three layers or more) are desired to be stacked. In addition, it is possible to easily secure the bonding force between the layers. In addition, since the electrode terminals are provided through the thin film element layers, it is easy to achieve electrical connection between the thin film element layers. In particular, when each thin film element layer is laminated by employing a transfer technique or the like, there is an advantage that electrical connection can be achieved without inverting the device structure of each thin film element layer in the lamination direction.

  Preferably, each of the second electrode terminal and the second non-conduction terminal has the lower exposed portion flush with the lower surface of the second thin film element layer.

  Thereby, even when the structure of the electrode terminal and the non-conduction terminal according to the present invention is adopted, the thickness of the entire thin film device can be reduced.

  Preferably, each of the second electrode terminal and the second non-conduction terminal is formed such that the upper exposed portion is higher than the upper surface of the second thin film element layer.

  Since each terminal protrudes from the upper surface of the second thin film element layer, it is possible to use these to stack another thin film element layer on the upper side of the second thin film element layer. In the case where the layer is bonded to another circuit board or the like, it becomes easy to achieve electrical and physical bonding.

  Preferably, the first electrode terminal and the first non-conductive terminal are formed using the same material.

  Thereby, the joining force produced by each of the electrode terminal and the non-conducting terminal becomes uniform, and it becomes possible to secure a better joined state. Further, since the material is made common, it is easy to form the electrode terminal and the non-conductive terminal.

  Preferably, the second electrode terminal and the second non-conduction terminal are formed using the same material.

  Thereby, the joining force produced by each of the electrode terminal and the non-conducting terminal becomes uniform, and it becomes possible to secure a better joined state. Further, since the material is made common, it is easy to form the electrode terminal and the non-conductive terminal.

  More preferably, the first electrode terminal, the first non-conductive terminal, the second electrode terminal, and the second non-conductive terminal are formed using the same material.

  Since the electrode terminals made of the same kind of material are joined to each other and the non-conducting terminals are joined to each other, the joining force can be further improved. In addition, since the material is made common, the electrode terminal and the non-conduction terminal can be formed more easily.

  The present invention of the second aspect relates to a preferred example of a method for manufacturing the thin film device according to the present invention of the first aspect described above. Specifically, the second aspect of the present invention is a method of manufacturing a thin film device formed by laminating thin film element layers including thin film elements, wherein the first thin film element layer is formed on a predetermined surface. A first electrode terminal electrically connected to the first thin film element layer and the first thin film element layer not electrically connected to the first thin film element layer on the upper side of the first thin film element layer; A second step of forming a non-conductive terminal, a third step of forming a second thin film element layer on the transfer source substrate, a penetrating portion that penetrates the second thin film element layer, and the first An upper exposed portion exposed on the upper surface of the second thin film element layer, and a lower exposed portion exposed on the lower surface of the second thin film element layer, which are electrically connected to the second thin film element and the like. A second electrode terminal; a penetrating portion penetrating the second thin film element layer; and an upper dew exposed on an upper surface of the second thin film element layer. And a second exposed non-conductive terminal that is not electrically connected to the second thin film element or the like, and a lower exposed part exposed on a lower surface of the second thin film element layer. 4 steps, a fifth step of transferring the second thin film element layer to a predetermined temporary transfer substrate, the upper exposed portions of the first electrode terminal and the first non-conductive terminal, and the first A sixth step of bonding the second electrode terminal and the lower exposed portion of each of the second non-conducting terminals, the temporary transfer substrate is removed, and the second thin film element layer is replaced with the first thin film element. And a seventh step of transferring to the upper side of the layer.

  According to such a manufacturing method, when manufacturing a thin film device formed by laminating thin film element layers, it is possible to ensure a good bonding state between a plurality of thin film element layers and to make electrical connection between the layers. It can be made easy.

  Preferably, prior to the first step, an eighth step of flattening the predetermined surface is further included.

  Thereby, it is easy to ensure the flatness of the upper surface of the first thin film element layer, and the heights of the first electrode terminal and the first non-conducting terminal formed on the upper surface are easily made uniform. By improving the uniformity of the height of each terminal, it becomes possible to further increase the bonding force between the layers.

  Preferably, the method further includes a ninth step of planarizing the upper surface of the transfer source substrate prior to the third step.

  Thereby, it becomes easy to ensure the flatness of the upper surface of the second thin film element layer, and it becomes easy to make the heights of the second electrode terminal and the second non-conducting terminal formed on the upper surface uniform. By improving the uniformity of the height of each terminal, it becomes possible to further increase the bonding force between the layers.

  Preferably, the second step includes a hole forming step of forming an exposed hole for exposing a predetermined position in the layer of the first thin film element layer, a top surface of the first thin film element layer, and the exposure. A conductive film forming step of forming a conductive film embedded in the hole; and a patterning step of patterning the conductive film to form the first electrode terminal and the first non-conductive terminal.

  Thereby, the 1st electrode terminal and 1st non-conduction terminal which consist of the same material can be formed easily with few processes.

  More preferably, the second step includes a planarization step of planarizing the upper surface of the conductive film prior to the patterning step.

  Thereby, the flatness of each upper surface of a 1st electrode terminal and a 1st non-conduction terminal improves, and the joining state with a 2nd electrode terminal and a 2nd non-conduction terminal can be made more favorable. . Further, even when the uneven state of the first thin film element layer or the like on the lower layer side is reflected in the conductive film, the first electrode terminal and the first non-conductive terminal can be obtained by performing the planarization process. The height can be aligned.

  Preferably, the fourth step includes a hole for forming an exposed hole for exposing a predetermined position in the second thin film element layer and a through hole penetrating the predetermined position of the second thin film element layer. Forming a conductive film that covers the upper surface of the second thin film element layer and forming a conductive film embedded in the exposed hole and the through hole; patterning the conductive film; and A patterning step of forming an electrode terminal and the second non-conducting terminal.

  Thereby, the 2nd electrode terminal and 2nd non-conduction terminal which consist of the same material can be formed easily with few processes.

  More preferably, the fourth step includes a planarization step of planarizing the upper surface of the conductive film prior to the patterning step.

  Thereby, the flatness of each upper surface of a 2nd electrode terminal and a 2nd non-conduction terminal improves, and the joining state with a 1st electrode terminal and a 1st non-conduction terminal can be made more favorable. . Further, even when the uneven state of the lower second thin film element layer or the like is reflected in the conductive film, by performing the planarization treatment, the second electrode terminal and the second non-conductive terminal The height can be aligned.

  The third aspect of the present invention is an integrated circuit including the thin film device according to the present invention described above. Here, “integrated circuit” refers to a circuit in which thin film devices and related wirings are integrated and wired so as to exhibit a certain function.

  The fourth aspect of the present invention is a matrix apparatus including the thin film device according to the above-described invention. Here, the “matrix device” refers to a device configured to sequentially select functional elements arranged in a matrix and to exhibit a predetermined function. Such a matrix device is used in various devices such as an electro-optical device and a capacitance detection device. The term “electro-optical device” as used herein refers to a general device equipped with an electro-optical element that emits light by an electrical action or changes the state of light from the outside. The device that emits light and the passage of light from the outside Including those that control For example, as an electro-optical element, a liquid crystal element, an electrophoretic element having a dispersion medium in which electrophoretic particles are dispersed, an EL (electroluminescence) element, and an electron-emitting element that emits light by applying electrons generated by applying an electric field to a light emitting plate An active matrix display device provided.

  The fifth aspect of the present invention is an electronic apparatus including the above-described thin film device according to the present invention. Here, the “electronic device” refers to a general device having a certain function, and includes, for example, an electro-optical device and a memory. There is no particular limitation on the configuration of the electronic device. For example, an IC card, a mobile phone, a video camera, a personal computer, a head mounted display, a rear type or front type projector, a fax machine with a display function, a digital camera finder, Examples include portable TVs, PDAs, electronic notebooks, electric bulletin boards, and advertising announcement displays.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is a cross-sectional view illustrating the configuration of a thin film device according to an embodiment. FIG. 2 is a partially enlarged view of the thin film device shown in FIG. The thin film device of this embodiment is formed by laminating a thin film element layer 13, a thin film element layer 23, and a thin film element layer 33 including thin film transistors and wirings on a substrate 10 made of an insulating material such as glass or resin. Is. In the present embodiment, the thin film element layer 23 and the thin film element layer 33 are formed in advance on a separate substrate (transfer source substrate) serving as a transfer source and then thinned using the device transfer technique disclosed in Patent Document 1 above. It is formed by transferring to the upper side of the element layer 13.

  The substrate 10 has a thin film element layer 13 and the like laminated on one surface. As the substrate 10, a glass substrate, a plastic substrate, or the like is preferably used. Further, it is preferable that at least one surface of the substrate 10 is flattened by a method such as a CMP method (chemical mechanical polishing method). In the present embodiment, the upper surface of the substrate 10 corresponds to a “predetermined surface” according to the present invention.

  The thin film element layer 13 includes circuit elements such as a thin film transistor and other thin film elements (for example, a capacitor) and a wiring film, and is formed on one surface (predetermined surface) of the substrate 10. The thin film element layer 13 includes an underlayer 12 that functions to prevent impurities from entering from the substrate 10. For example, a silicon oxide film is preferably used as the underlayer 12. The thin film element layer 13 corresponds to the “first thin film element layer” in the present invention.

  The electrode terminal 16 and the non-conduction terminal 17 are each formed on the upper side of the thin film element layer 13. The electrode terminal 16 is electrically connected to the thin film element layer 13 and mainly has a function of electrically bonding the thin film element layer 13 and the thin film element layer 23 to each other, and also has a function of physically bonding them. Bear. The non-conduction terminal 17 is not electrically connected to the thin film element layer 13 and mainly has a function of physically joining the thin film element layer 13 and the thin film element layer 23 to each other. The electrode terminal 16 corresponds to the “first electrode terminal” in the present invention, and the non-conductive terminal 17 corresponds to the “first non-conductive terminal” in the present invention.

  In the present embodiment, the electrode terminal 16 and the non-conduction terminal 17 have substantially the same height (thickness) and are formed using the same material. Here, as a material for forming the electrode terminal 16 and the non-conduction terminal 17, any material can be adopted as long as it is a conductor, but it is particularly preferable to use InAu (indium-gold). Thereby, it becomes possible to aim at the low temperature of joining.

  Further, in the present embodiment, the non-conductive terminal 17 is formed in almost the entire region above the thin film element layer 13 and excluding the formation region of the electrode terminal 16. More specifically, the non-conductive terminal 17 includes the electrode It is formed over a wide range between the thin film element layer 13 and the thin film element layer 23 while maintaining a gap that can ensure a necessary and sufficient insulation state with the terminal 16. As a result, physical bonding between the thin film element layer 13 and the thin film element layer 23 can be further strengthened. Further, the non-conductive terminal 17 formed in a wide range using the conductive film in this way is interposed between the thin film element layer 13 and the thin film element layer 23 to electromagnetically shield them from each other. It is also expected to exhibit a function of avoiding electromagnetic interference caused by radiated electromagnetic waves.

  The thin film element layer 23 includes circuit elements such as a thin film transistor and other thin film elements (for example, a capacitor) and a wiring film, and is formed on the upper side of the electrode terminal 16 and the like. The thin film element layer 23 includes a base layer 22 that functions to prevent intrusion of impurities from the transfer source substrate when the thin film element layer 23 is formed. For example, a silicon oxide film is preferably used as the base layer 22. The thin film element layer 23 corresponds to the “second thin film element layer” in the present invention.

  The electrode terminal 26 is provided while partially penetrating the thin film element layer 23. The electrode terminal 26 is electrically connected to the thin film element layer 23, and mainly electrically connected between the thin film element layer 13 and the thin film element layer 23 and between the thin film element layer 23 and the thin film element layer 33. It has a function of connecting, and also a function of physically joining. More specifically, as shown in FIG. 2A, the electrode terminal 26 includes a through portion 26 a that penetrates the thin film element layer 23, an upper exposed portion 26 b that is exposed on the upper surface of the thin film element layer 23, and the thin film element layer 23. And a lower exposed portion 26c exposed on the lower surface of the. By joining the lower exposed portion 26c of the electrode terminal 26 and the upper portion of the electrode terminal 16, electrical connection between the thin film element layers is achieved.

  As shown in the figure, the upper exposed portion 26 b of the present embodiment is formed to protrude higher than the upper surface of the thin film element layer 23. Thereby, joining with the thin film element layer 33 becomes easier. Further, as shown in the drawing, the lower exposed portion 26 c (and the lower exposed portion 27 c described later) is formed flush with the lower surface of the thin film element layer 23. Thereby, the thickness of the whole thin film device can be reduced more. The electrode terminal 26 corresponds to the “second electrode terminal” in the present invention.

  The non-conductive terminal 27 is provided while partially penetrating the thin film element layer 23. The non-conduction terminal 27 is not electrically connected to the thin film element layer 23, and mainly between the thin film element layer 13 and the thin film element layer 23 and between the thin film element layer 23 and the thin film element layer 33. Responsible for physical bonding. More specifically, as shown in FIG. 2B, the non-conductive terminal 27 includes a through portion 27a that penetrates the thin film element layer 23, an upper exposed portion 27b that is exposed on the upper surface of the thin film element layer 23, and a thin film element layer. 23, a lower exposed portion 27c exposed on the lower surface of 23. By bonding the lower exposed portion 27c of the non-conductive terminal 27 and the upper part of the non-conductive terminal 17, physical bonding between the thin film element layers is achieved.

  As shown in the drawing, the upper exposed portion 27b of the present embodiment is formed to protrude higher than the upper surface of the thin film element layer 23. Thereby, joining with the thin film element layer 33 becomes easier. Further, as illustrated, the lower exposed portion 27 c (and the lower exposed portion 26 c described above) is formed flush with the lower surface of the thin film element layer 23. Thereby, the thickness of the whole thin film device can be reduced more. The non-conductive terminal 27 corresponds to the “second non-conductive terminal” in the present invention.

  The electrode terminal 28 is provided on the upper side of the thin film element layer 23. The electrode terminal 28 is electrically connected to the thin film element layer 23, and mainly has a function of electrically connecting the thin film element layer 23 and the thin film element layer 33, and also has a function of physically joining them.

  In the present embodiment, the electrode terminals 26 and 28 and the non-conduction terminal 27 have substantially the same height (thickness) and are formed using the same material. Here, as a material for forming the electrode terminals 26 and 28 and the non-conduction terminal 27, any material can be adopted as long as it is a conductor, but it is particularly preferable to use InAu (indium-gold). Thereby, it becomes possible to aim at the low temperature of joining. The electrode terminals 26 and 28 and the non-conductive terminal 27 are more preferably formed using the same material as the electrode terminal 16 and the non-conductive terminal 17 described above. Thereby, the joining property between each terminal can be made more favorable.

  In addition, the non-conduction terminal 27 in the present embodiment is formed in almost the entire region above the thin film element layer 23 except for the formation region of the electrode terminals 26 and 28. More specifically, the non-conductive terminal 27 is in a wide range between the thin film element layer 13 and the thin film element layer 23 while maintaining a gap that can ensure a necessary and sufficient insulation state between the electrode terminals 26 and 28. It is formed across. As a result, physical bonding between the thin film element layer 13 and the thin film element layer 23 can be further strengthened. Further, the non-conductive terminal 27 formed in a wide range using the conductive film in this way is interposed between the thin film element layer 13 and the thin film element layer 23 to electromagnetically shield them from each other. It is also expected to exhibit a function of avoiding electromagnetic interference caused by radiated electromagnetic waves.

  The thin film element layer 33 includes circuit elements such as a thin film transistor and other thin film elements (for example, a capacitor) and a wiring film, and is formed on the upper side of the electrode terminal 26 and the like. The thin film element layer 33 includes a base layer 32 that functions to prevent impurities from entering from the transfer source substrate when the thin film element layer 33 is formed. For example, a silicon oxide film is preferably used as the base layer 32.

  The electrode terminal 36 is provided while partially penetrating the thin film element layer 33. The electrode terminal 36 is electrically connected to the thin film element layer 33, and mainly has a function of electrically connecting the thin film element layer 23 and the thin film element layer 33, and also a function of physically joining them. Similarly to the electrode terminal 26 described above, the electrode terminal 36 includes a through portion, an upper exposed portion, and a lower exposed portion (see FIG. 2A). By bonding the lower exposed portion of the electrode terminal 36 and the upper exposed portion 26b of the electrode terminal 26, electrical and physical bonding between the thin film element layers can be achieved. Further, the upper exposed portion of the electrode terminal 36 is used to achieve electrical connection with other electric circuits (not shown).

  The non-conductive terminal 37 is provided while partially penetrating the thin film element layer 33. The non-conducting terminal 37 is not electrically connected to the thin film element layer 33 and mainly has a function of physically joining the thin film element layer 23 and the thin film element layer 33. The non-conducting terminal 37 includes a penetrating portion, an upper exposed portion, and a lower exposed portion similarly to the electrode terminal 27 described above (see FIG. 2B). By bonding the lower exposed portion of the non-conductive terminal 37 and the upper exposed portion 26b of the non-conductive terminal 27, physical bonding between the thin film element layers is achieved.

  The electrode terminal 38 is electrically connected to the thin film element layer 33 and is provided on the upper side of the thin film element layer 33. By utilizing the upper exposed portion of the electrode terminal 36, electrical connection with other electric circuit (not shown) or the like is achieved.

  The thin film device of this embodiment has such a configuration, and a preferred example of a method for manufacturing the thin film device will be described next.

  3 to 6 are process cross-sectional views illustrating a method for manufacturing a thin film device according to an embodiment.

  First, as shown in FIG. 3A, a release layer 31 is formed on one surface of a transfer source substrate 30. Here, it is preferable that the transfer origin substrate 30 is a thing (for example, a glass substrate etc.) which has translucency on account of the process mentioned later. The release layer 31 absorbs irradiated light and has a property of causing release in the layer or at the interface, and between the atoms or molecules of the substance constituting the release layer 31 by light irradiation. It is more preferable that the bonding strength disappears or decreases. Various compositions such as a semiconductor, a metal, a ferroelectric, and an organic compound are conceivable as the composition of the peeling layer 31. Amorphous silicon is particularly preferably used. Amorphous silicon is preferably formed by CVD, particularly low pressure CVD or plasma CVD.

  Next, as shown in FIG. 3B, a thin film element layer 33 is formed on one surface of the transfer source substrate 30. Specifically, first, the underlayer 32 made of silicon oxide or the like is formed by various film forming methods such as a sputtering method and a CVD method. Thereafter, a thin film element layer 33 including a thin film transistor or the like is formed on the upper surface of the base layer 32. The specific manufacturing process of the thin film element layer 33 differs depending on individual circumstances such as what is adopted as the thin film element and what layout is adopted. A combination of techniques may be used as appropriate. At this time, an exposure hole 33a and a through-hole 33b are appropriately formed for electrical connection between a thin film element or wiring included in the thin film element layer 33 and a second electrode terminal 26 to be formed later.

  Prior to the formation process of the thin film element layer 33 and the like, it is also preferable to flatten one surface of the transfer source substrate 30. For this planarization process, for example, a CMP method can be employed.

  Next, as shown in FIGS. 3C to 3E, electrode terminals 36 and 38 and a non-conduction terminal 37 are formed on the upper side of the thin film element layer 33.

  Specifically, first, as shown in FIG. 3C, a conductive film 34 is formed on the upper surface of the thin film element layer 33. For example, in this embodiment, an InAu film is employed as the conductive film 34. The InAu film can be formed by a film forming method such as a sputtering method or a vapor deposition method.

  Next, as shown in FIG. 3D, the upper surface of the conductive film 34 is planarized by a method such as a CMP method or an etch back method. Note that this step may be omitted.

  Next, as shown in FIG. 3E, the conductive film 34 is patterned using a known photolithography technique, etching technique, or the like to form electrode terminals 36 and 38 and a non-conduction terminal 37.

  Next, as shown in FIGS. 4A to 4C, the thin film element layer 33 is transferred to the temporary transfer substrate 40.

  Specifically, as shown in FIG. 4A, first, an adhesive material 41 is applied on one surface of the temporary transfer substrate 40, and the thin film element layer 33 is disposed to face the surface on which the adhesive material 41 is formed. To do. Here, as the adhesive 41, it is preferable to employ a water-soluble adhesive in order to facilitate removal in a later step.

  Next, as shown in FIG. 4B, the temporary transfer substrate 40 and the thin film element layer 33 are bonded to each other with an adhesive 41. Then, the release layer 31 is irradiated with laser light through the temporary transfer substrate 30 to give energy to the release layer 31. Thereby, peeling can be caused in the layer of the peeling layer 31 and / or the interface, and the adhesion of the peeling layer 31 can be weakened. In this embodiment, since amorphous silicon is employed as the peeling layer 31, peeling can be effectively caused by using laser light (eg, excimer laser) having a wavelength of about 100 nm to 350 nm.

  Note that the content of the treatment in this step differs depending on the material used to form the release layer, and the above is an example. Basically, any method for applying energy may be adopted as long as it can cause the release layer 31 to peel off.

  Next, as shown in FIG. 4C, the transfer source substrate 30 is removed from the temporary transfer substrate 40, and the thin film element layer 33 is moved to the temporary transfer substrate 40. The transfer source substrate 30 is removed, for example, by inserting a wedge-shaped member (jig) between the transfer source substrate 30 and the temporary transfer substrate 40 and applying a force to separate the two substrates. Note that the release layer 31 may remain on the bottom surface of the thin film element layer 33 transferred to the temporary transfer substrate 40 after the transfer source substrate 30 is removed. As a method for completely removing the residue, for example, a method such as cleaning, etching, ashing, polishing, or a combination of these methods can be selected as appropriate.

  Next, as shown in FIG. 4D, a release layer 21 is formed on one surface of the transfer source substrate 20, and a thin film element layer 23, electrode terminals 26 and 28, non-conductive terminals are formed on the release layer 21. 27 are formed. These specific formation methods are the same as those of the thin film element layer 33 and the like described above (see FIGS. 3A to 3E), and detailed description thereof is omitted here.

  Next, as shown in FIGS. 5A to 5C, the thin film element layer 23 is transferred to the temporary transfer substrate 40.

  Specifically, first, as shown in FIG. 5A, the thin film element layer 33 supported by the transfer source substrate 40 and the thin film element layer 23 supported by the transfer source substrate 20 are faced to each other, and the thin film element layer The upper exposed portions of the electrode terminals 26 and 28 on the 23 side and the non-conductive terminals 27 are joined to the lower exposed portions of the electrode terminals 36 and the non-conductive terminals 27 on the thin film element layer 33 side. In this embodiment, since each terminal is formed using InAu, in this step, heat treatment is performed at 150 ° C. for about 30 minutes with each terminal in contact. Thereby, the interface between each terminal can be solid-phase diffusion bonded. By adopting InAu, it becomes possible to lower the heat treatment temperature necessary for the treatment in this step.

  The contents of the process in this step differ depending on what material is used to form each terminal, and the above is an example. Methods other than the above methods (for example, solder bonding) can also be employed.

  Next, as shown in FIGS. 5B and 5C, the transfer source substrate 20 is removed, and the thin film element layer 23 is transferred to the lower side of the thin film element layer 33.

  Specifically, first, as shown in FIG. 5B, energy is applied by irradiating the release layer 21 with laser light through the transfer source substrate 20 to weaken the adhesion of the release layer 21. Next, as shown in FIG. 5C, the transfer source substrate 20 is removed from the temporary transfer substrate 40, and the thin film element layer 23 is moved below the thin film element layer 33. Detailed conditions of these steps are the same as those of the thin film element layer 33 described above (see FIGS. 4B and 4C), and detailed description thereof is omitted here.

  Next, as illustrated in FIG. 6A, the thin film element layer 13, the electrode terminals 16 and 18, and the non-conduction terminal 17 are formed on one surface of the substrate 10. These specific formation methods are the same as those of the thin film element layers 23 and 33 described above (see FIGS. 3A to 3E), and detailed description thereof is omitted here.

  Next, as shown in FIGS. 6B and 6C, the thin film element layers 23 and 33 are transferred to the substrate 10.

  Specifically, first, as shown in FIG. 6B, the thin film element layers 23 and 33 supported by the transfer source substrate 40 and the thin film element layer 13 supported by the substrate 10 face each other to form the thin film element layer. The lower exposed portions of the electrode terminal 26 and the non-conductive terminal 27 on the 23 side and the upper exposed portions of the electrode terminal 16 and the non-conductive terminal 17 on the thin film element layer 13 side are joined. In this embodiment, since each terminal is formed using InAu, in this step, heat treatment is performed at 150 ° C. for about 30 minutes with each terminal in contact. Thereby, the interface between each terminal can be solid-phase diffusion bonded. By adopting InAu, it becomes possible to lower the heat treatment temperature necessary for the treatment in this step.

  The contents of the process in this step differ depending on what material is used to form each terminal, and the above is an example. Methods other than the above methods (for example, solder bonding) can also be employed.

  Next, as shown in FIG. 6C, the temporary transfer substrate 40 is removed, and the thin film element layers 23 and 33 are transferred to the upper side of the thin film element layer 13. Specifically, the temporary transfer substrate 40 can be removed from the substrate 10 by rinsing the water-soluble adhesive 41 with water, and the thin film element layers 23 and 33 can be moved to the upper side of the thin film element layer 13.

  As described above, according to the present embodiment, in addition to the electrode terminals that are difficult to secure a large area due to device design restrictions, a non-conductive terminal that has a high degree of freedom in layout and is relatively easy to secure a large area is provided. Therefore, it is possible to obtain a sufficient bonding force between the thin film element layers. Therefore, in a three-dimensional device formed by laminating thin film element layers, it is possible to ensure a good bonding state between a plurality of thin film element layers.

  Further, according to the present embodiment, the electrode terminal and the non-conductive terminal are exposed on both the upper side and the lower side of the second thin film element layer (thin film element layer 23). When it is desired to stack the above thin film element layers, it is possible to easily secure the bonding force between the layers.

  Moreover, according to this embodiment, since the electrode terminal is provided through the thin film element layer, it is easy to achieve electrical connection of each thin film element layer. In particular, when each thin film element layer is laminated by employing a transfer technique or the like, there is an advantage that electrical connection can be achieved without inverting the device structure of each thin film element layer in the lamination direction.

  Next, application examples of the thin film device according to the above-described embodiment will be described.

  FIG. 7 is a circuit block diagram of a matrix apparatus configured to include thin film devices. The matrix device 100 of this embodiment supplies a predetermined data signal to the scan line driver 101 that supplies a predetermined scan signal to the m scan lines Y1 to Ym and the n data lines X1 to Xn. And a functional unit 103 connected to each intersection of the scanning line and the data line. Here, various functional units 103 can be considered. For example, when the matrix device 100 is configured using a pixel circuit including a liquid crystal element, an organic electroluminescence element, an electrophoretic element, and the like as the functional unit 103, an electro-optical device (display device) is obtained. In addition, when the matrix device 100 is configured using the capacitance detection element as the functional unit 103, a fingerprint sensor or the like is obtained. In addition, when the matrix device 100 is configured using the photoelectric detection element as the functional unit 103, an artificial retina device is obtained. Each of the scanning line driver 101 and the data line driver 102 can also be configured using the thin film device according to the present invention.

  FIG. 8 is a diagram illustrating a specific example of an electronic apparatus including a thin film device. FIG. 8A shows an application example to a mobile phone. The mobile phone 530 includes an antenna portion 531, an audio output portion 532, an audio input portion 533, an operation portion 534, and a display portion 535 including the matrix device described above. It has. FIG. 8B shows an application example to a video camera. The video camera 540 includes an image receiving unit 541, an operation unit 542, an audio input unit 543, and a display unit 544 including the above-described matrix device. FIG. 8C shows an application example to a television, and the television 550 includes a display portion 551 including the above-described matrix device. The electro-optical device according to the present invention can be similarly applied to a monitor device used for a personal computer or the like. FIG. 8D illustrates an application example to a roll-up television, and the roll-up television 560 includes a display portion 561 including the matrix device described above. Moreover, the thin film device according to the present invention is not limited to the above-described example, and can be applied to any electronic apparatus. For example, in addition to this, the present invention can also be applied to a fax machine with a display function, a digital camera finder, a portable TV, a PDA, an electronic notebook, an electric bulletin board, an advertisement display, an IC card, and the like.

  In addition, this invention is not limited to the content of embodiment mentioned above, A various deformation | transformation implementation is possible within the range of the summary of this invention.

  For example, in the above-described embodiment, the transfer source substrate is removed by a technique using a release layer, but besides this, various implementations such as a method of dissolving by etching or a method of scraping by mechanical polishing or the like are performed. Embodiments are possible.

  Moreover, it is good also as a 2 layer structure of the thin film element layers 13 and 23 not with three thin film element layers like embodiment mentioned above. In this case, the upper exposed portions 26b and 27b of each terminal exposed on the upper side of the thin film element layer 22 can be used as a connection portion with the outside (for example, a circuit board or the like). In this case, the manufacturing method is similar to the steps shown in FIGS. 4A to 4C described above, and the thin film element layer 23 and the like formed on the transfer source substrate 22 are transferred to the temporary transfer substrate. Then, the thin film element layer 22 may be transferred to the upper side of the thin film element layer 13 in the same manner as the steps shown in FIGS. 6 (A) to 6 (C).

It is sectional drawing explaining the structure of the thin film device of one Embodiment. It is the elements on larger scale of the thin film device shown in FIG. It is process sectional drawing explaining the manufacturing method of the thin film device of one Embodiment. It is process sectional drawing explaining the manufacturing method of the thin film device of one Embodiment. It is process sectional drawing explaining the manufacturing method of the thin film device of one Embodiment. It is process sectional drawing explaining the manufacturing method of the thin film device of one Embodiment. It is a circuit block diagram of the matrix apparatus comprised including a thin film device. It is a figure explaining the specific example of the electronic device comprised including a thin film device.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Substrate, 13 ... (First) thin film element layer, 14, 24 ... Conductive film, 16 ... (First) electrode terminal, 17 ... (First) non-conductive terminal, 20 ... Transfer source substrate, 23 ... (second) thin film element layer, 26 ... (second) electrode terminal, 26a ... penetrating part, 26b ... upper exposed part, 26c ... lower exposed part, 27 ... (second) non-conducting terminal, 27a ... penetrating part, 27b ... upper exposed part, 27c ... lower exposed part, 40 ... temporary transfer substrate

Claims (16)

A thin film device formed by laminating thin film element layers including thin film elements,
A first thin film element layer formed on a predetermined surface;
A first electrode terminal formed above the first thin film element layer and electrically connected to the first thin film element layer;
A first non-conducting terminal formed on the first thin film element layer and not electrically connected to the first thin film element layer;
A second thin film element layer formed above the first electrode terminal and the first non-conductive terminal;
A penetrating portion penetrating through the second thin film element layer, an upper exposed portion exposed on the upper surface of the second thin film element layer, and a lower exposed portion exposed on the lower surface of the second thin film element layer. A second electrode terminal electrically connected to the second thin film element layer;
A penetrating portion penetrating through the second thin film element layer, an upper exposed portion exposed on the upper surface of the second thin film element layer, and a lower exposed portion exposed on the lower surface of the second thin film element layer. A second non-conductive terminal that is not electrically connected to the second thin film element layer;
Including
By joining each of the first electrode terminal and the first non-conductive terminal and the lower exposed portion of each of the second electrode terminal and the second non-conductive terminal, the first electrode terminal and the first non-conductive terminal are joined. And a thin film device configured to achieve electrical and physical bonding between the second thin film element layers.   2. The thin film device according to claim 1, wherein each of the second electrode terminal and the second non-conductive terminal has the lower exposed portion formed flush with a lower surface of the second thin film element layer.   2. The thin film device according to claim 1, wherein each of the second electrode terminal and the second non-conducting terminal has the upper exposed portion formed higher than an upper surface of the second thin film element layer.   The thin film device according to claim 1, wherein the first electrode terminal and the first non-conduction terminal are formed using the same material.   The thin film device according to claim 1, wherein the second electrode terminal and the second non-conduction terminal are formed using the same material.   2. The thin film device according to claim 1, wherein the first electrode terminal, the first non-conduction terminal, the second electrode terminal, and the second non-conduction terminal are formed using the same material. A method of manufacturing a thin film device comprising a thin film element layer including a thin film element,
A first step of forming a first thin film element layer on a predetermined surface;
On the upper side of the first thin film element layer, a first electrode terminal electrically connected to the first thin film element layer and a first non-electrically connected to the first thin film element layer A second step of forming a conduction terminal;
A third step of forming a second thin film element layer on the transfer source substrate;
A penetrating portion penetrating through the second thin film element layer, an upper exposed portion exposed on the upper surface of the second thin film element layer, and a lower exposed portion exposed on the lower surface of the second thin film element layer. A second electrode terminal that is electrically connected to the second thin film element, a through portion that penetrates the second thin film element layer, and an upper side that is exposed on an upper surface of the second thin film element layer. Forming a second non-conducting terminal that is electrically connected to the second thin film element or the like and includes an exposed part and a lower exposed part exposed on a lower surface of the second thin film element layer. A fourth step;
A fifth step of transferring the second thin film element layer to a predetermined temporary transfer substrate;
The first exposed portion of each of the first electrode terminal and the first non-conductive terminal and the lower exposed portion of each of the second electrode terminal and the second non-conductive terminal are joined together. 6 steps,
Removing the temporary transfer substrate and transferring the second thin film element layer to the upper side of the first thin film element layer;
A method for manufacturing a thin film device.   The thin film device manufacturing method according to claim 7, further comprising an eighth step of planarizing the predetermined surface prior to the first step.   8. The method of manufacturing a thin film device according to claim 7, further comprising a ninth step of planarizing an upper surface of the transfer source substrate prior to the third step. The second step includes
A hole forming step of forming an exposed hole for exposing a predetermined position in the layer of the first thin film element layer;
A conductive film forming step of forming a conductive film that covers an upper surface of the first thin film element layer and is embedded in the exposed hole;
Patterning the conductive film to form the first electrode terminal and the first non-conductive terminal; and
The manufacturing method of the thin film device of Claim 7 containing this. The second step includes
The method for manufacturing a thin film device according to claim 10, further comprising a planarization step of planarizing an upper surface of the conductive film prior to the patterning step. The fourth step includes
A hole forming step of forming an exposed hole exposing a predetermined position in the layer of the second thin film element layer and a through hole penetrating the predetermined position of the second thin film element layer;
A conductive film forming step of covering the upper surface of the second thin film element layer and forming a conductive film embedded in the exposed hole and the through hole;
Patterning the conductive film to form the second electrode terminal and the second non-conductive terminal; and
The manufacturing method of the thin film device of Claim 7 containing this. The fourth step includes
The method of manufacturing a thin film device according to claim 12, further comprising a planarization step of planarizing an upper surface of the conductive film prior to the patterning step.   An integrated circuit comprising the thin film device according to claim 1.   A matrix apparatus comprising the thin film device according to claim 1.   An electronic apparatus comprising the thin film device according to claim 1.

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