JP2006123054A - Grooving tool, and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a grooving tool and its manufacturing method uniformizing the width dimension of pattern grooves in forming the pattern grooves of predetermined width in a layer to be machined, formed on a substrate. <P>SOLUTION: A patterning tool 1 forms the pattern grooves of predetermined width dimension on the glass substrate by moving relatively to the glass substrate while pressing the tip to a semiconductor layer provided on the glass substrate. The tip part of the patterning tool 1 comprises an abutting face 2 abutting on the glass substrate, a rake face 3 contacting the semiconductor layer, and a flank 4 formed at a predetermined angle θ to the rake face. The rake face is formed with a plurality of grooves in an orthogonal direction to the longitudinal direction of the abutting face, which is the width direction of the grooving tool in the state of pressing the rake face to the layer to be machined. A plurality of cracks can thereby be formed within the width W of the patterning tool 1, and the width dimension of the pattern grooves can be uniformized. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a groove processing tool for patterning a processing target layer provided on a substrate and a manufacturing method thereof.

Conventionally, there is an etching process or the like as a method for patterning a substrate. For example, Patent Document 1 discloses the method.
That is, a gate insulating film is formed on a silicon substrate by thermal oxidation, and then a polycrystalline silicon film containing an impurity P (phosphorus) is formed on the gate insulating film by a low pressure CVD method. Subsequently, the polycrystalline silicon film is subjected to RIE dry etching, the gate insulating film is then wet etched, and the silicon substrate is again subjected to RIE dry etching to form an opening. Therefore, patterning can be performed.

Another method for patterning a substrate is machining with a tool.
For example, in order to connect amorphous semiconductor solar cells in series on the same insulating substrate, after forming a transparent electrode film, an amorphous semiconductor film or a metal electrode film, according to the pattern required for each thin film This is a method of scribing a portion that requires edge cutting with a tool into a groove shape, that is, forming a pattern groove in a thin film.

  As shown in FIG. 8, the tool to be used, that is, the patterning tool 41, is provided with a substrate having a diamond or cemented carbide blade having a width W at the tip and a surface on which a thin film to be patterned is formed. The contact surface 42 in contact, the flank 44 positioned rearward with respect to the tool movement direction (hereinafter referred to as the tool feed direction) X, and the tool feed direction X formed with the flank 44 sandwiched by a predetermined angle θ. And a non-shaped rake face 43 located in the front.

When the pattern groove is formed in the thin film on the substrate by moving the patterning tool 41 in the tool feed direction X, the load of the tool tip applied to each thin film is set to a tool having a diamond blade. In the case of a tool having a cemented carbide blade, the transparent conductive film is 40 to 400 g, the non-conductive semiconductor film is 50 to 300 g, the amorphous semiconductor film is 40 to 500 g, the metal electrode film is 40 to 500 g. The crystalline semiconductor film is set to 20 to 300 g, and the metal electrode film is set to 40 to 200 g. The pattern groove is formed in the thin film while applying a constant load in the above range.
JP-A-3-222413

  However, according to the conventional configuration, when patterning is performed by moving the non-shaped rake face 43 of the patterning tool 41 in the tool feed direction X, stress is applied to both ends of the tip of the patterning tool 41 as shown in FIG. Since cracks 52 are generated along the grain boundaries of the thin film 51 starting from both ends of the patterning tool 41 in a concentrated manner, and the processing waste 53 having a size comparable to the width W of the patterning tool 41 is discharged, the width W or more. As a result, peeling occurs, and the width dimension of the pattern groove 54 becomes uneven.

  Accordingly, the present invention provides a groove processing tool capable of making the width of the pattern groove uniform when a pattern groove having a predetermined width is formed in a processing target layer formed on a substrate, and a method for manufacturing the same. It is aimed at.

  In order to achieve the above-mentioned object, according to the first aspect of the present invention, a predetermined movement is performed on the substrate by moving the substrate relative to the substrate while pressing the tip against the processing target layer provided on the substrate. In the groove processing tool for forming a pattern groove having a width dimension of, the tip of the groove processing tool is located on the abutting surface that contacts the substrate and on the rear side in the direction in which the groove processing tool is moved. A flank and a rake face formed with a predetermined angle between the flank and the rake face in the width direction of the groove working tool in a state where the rake face is pressed against the workpiece layer. A plurality of grooves are formed in parallel in a direction orthogonal to the longitudinal direction of the contact surface.

  The invention according to claim 2 is the invention according to claim 1, wherein the width of the tip of the groove working tool, which is the length in the longitudinal direction of the contact surface, is 10 to 200 μm, and the groove The predetermined angle, which is an angle formed by the flank and the rake face of the working tool, is 45 to 120 °, the groove width of the rake face is 1 to 20 μm, and the groove depth is 1 to 5 μm. It is characterized by that.

  According to a third aspect of the present invention, in the manufacturing method of a groove processing tool for forming a pattern groove having a predetermined width dimension in a processing target layer provided on a substrate, a plurality of groove portions having a shape opposite to the pattern groove. The transfer tool and the groove processing tool in a state where the non-shaped rake face of the groove processing tool formed of diamond is pressed against the transfer tool having a metal film formed on the groove portion. Relative movement is performed, and the surface shape formed on the transfer tool is transferred to the rake face.

  In the groove processing tool of the present invention, the plurality of grooves are parallel to the rake face in a direction perpendicular to the longitudinal direction of the contact surface, which is the width direction of the groove processing tool in a state where the rake face is pressed against the processing target layer. Since it is formed and a plurality of cracks can be formed at the tip of the groove working tool, the width dimension of the pattern groove becomes uniform, and the occurrence of peeling in the layer to be processed can be reduced.

Hereinafter, a processing tool for a groove and a manufacturing method thereof according to an embodiment of the present invention will be described with reference to the drawings.
In FIG. 1, reference numeral 1 denotes a patterning tool (an example of a groove processing tool) that forms a pattern groove 16 (described later) having a predetermined width in a semiconductor layer (an example of a processing target layer) 13 (described later) formed on a substrate. The patterning tool 1 has an abutting surface 2 in contact with a glass substrate (an example of a substrate) 11 (described later) and a direction in which the patterning tool 1 is moved (hereinafter referred to as a tool feed direction). ) It has a flank 4 located on the rear side of X, and a rake face 3 that is formed across the flank 4 and a predetermined angle θ and contacts the semiconductor layer 13, and the rake face 3 includes a rake face. Four semicircular grooves 5 are parallel to a direction X (hereinafter referred to as a tool feed direction) X orthogonal to the longitudinal direction of the contact surface 2 which is the width direction of the patterning tool 1 in a state where 3 is pressed against the semiconductor layer 13. Is formed, At each end of the semicircular groove 5, protrusions 6 (five protrusions 6 because there are four grooves in FIG. 1) are formed, and five (plural) stresses are generated by these protrusions 6. A concentrated point 7 is formed.

  When the width of the tip of the patterning tool 1 is W, the interval between the protrusions 6, that is, the width of the grooves 5 is the protrusion pitch P, and the height of the protrusions 6, that is, the depth of the grooves is the protrusion depth D. In the patterning tool 1 having a width W of 10 to 100 μm, the predetermined angle θ is 45 to 150 °, the protrusion pitch P is 1 to 20 μm, and the protrusion depth D is 1 to 5 μm.

Next, a method for manufacturing the patterning tool 1 will be described. For example, as a manufacturing method of the patterning tool 1 formed of diamond, there are mainly the following methods.
(First manufacturing method)
First, the transfer tool 25 shown in FIG. 2 is formed. That is, a master part (an example of a substrate) 21 having a groove part 23 having a protrusion depth D and a protrusion part 24 having a protrusion pitch P formed on the surface, which is a reverse pattern of the groove 5 and the protrusion part 6, is formed with a single crystal diamond tool. For example, a metal film 22 that is highly reactive with diamond such as molybdenum is formed on the upper surface of the master portion 21. To form a transfer tool 25.

  Next, as shown in FIGS. 2 and 4, first, the metal film 22 formed on the master portion 21 is formed at the tip portion of the patterning tool 1 with the flank 4 inclined at an angle β from the vertical direction. Press the non-shaped rake face 3. The angle β is an angle obtained by removing a desired angle θ from 90 °.

Then, with the rake face 3 pressed against the metal film 22, the patterning tool 1 is relatively moved in the tool feed direction X, and the rake face 3 of the patterning tool 1 is worn by friction.
As a result, the surface shape formed on the transfer tool 25, that is, the groove 23 and the protrusion 24, which are reverse patterns of the groove 5 and the protrusion 6, are transferred to the rake face 3 formed at the tip of the patterning tool 1. Therefore, desired grooves 5 and protrusions 6 can be formed on the rake face 3.
(Second manufacturing method)
Next, a manufacturing method of a patterning tool having a shape different from the rake face 3 of the patterning tool 1 formed by the above-described first method and having a plurality of stress concentration points will be described.

  First, the transfer tool 36 shown in FIG. 3 is formed. That is, a plurality of resist patterns 32 are formed on the upper surface of the substrate 31 by a rectangular plate resist formed with a thickness D ′ and a width M at predetermined intervals P ′ so that diamond is easily worn on the upper surface. The transfer tool 36 is formed by forming a metal film 33 that is highly reactive with diamond, such as molybdenum, which generates carbides, into a semicircular shape. As the resist material for forming the resist pattern 32, a resin or an inorganic material powder such as barium sulfate, which has a weaker adhesion between the resist pattern 32 and the substrate 31 than the adhesion between the metal film 33 and the substrate 31, is selected.

  Next, as shown in FIGS. 3 and 4, first, the metal film 33 formed on the substrate 31 is formed at the tip of the patterning tool 1 with the flank 4 inclined at an angle β from the vertical direction. Press the non-shaped rake face 3. The angle β is an angle obtained by removing a desired angle θ from 90 °.

  Subsequently, in a state where the rake face 3 is pressed against the metal film 33, stress is applied and the patterning tool 1 is relatively moved in the tool feed direction X. At this time, in a portion where the resist pattern 32 is not interposed between the metal film 33 and the substrate 31, the adhesion force at the interface between the metal film 33 and the substrate 31 is large, and the processing resistance to the patterning tool 1 is increased. Since the peeling resistance of the film 33 increases and the processing resistance to the patterning tool 1 increases, strong friction occurs at the contact portion between the patterning tool 1 and the metal film 33. At this time, when the contact portion is microscopically viewed, the temperature becomes high, and the formation of carbides is promoted by the reaction between the metal film 33 and diamond, so that wear of diamond, that is, the patterning tool 1 increases. Further, at the location where the resist pattern 32 is interposed between the metal film 33 and the substrate 31, the adhesive force at the interface between the resist pattern 32 and the substrate 31 is small, and the processing resistance to the patterning tool 1 is small, that is, the resist pattern 32. At the same time, the peeling resistance of the metal film 33 is reduced, and the processing resistance to the patterning tool 1 is reduced. For this reason, although the patterning tool 1 and the metal film 33 are in contact with each other, the frictional force is reduced, and wear of diamond, that is, the patterning tool 1 is reduced.

  As a result, wear of the rake face 3 of the patterning tool 1 is promoted at a location where the resist pattern 32 is not interposed between the metal film 33 and the substrate 31, so that a groove 34 having a projection depth D ′ is formed. Since the wear of the rake face 3 of the patterning tool 1 is suppressed at the location where the resist pattern 32 is interposed, the protrusions 35 having the protrusion pitch P ′ are formed. In this way, the surface shape formed on the transfer tool 36, that is, the shape of the resist pattern 32 can be transferred to the rake face 3 formed at the tip of the patterning tool 1. As shown in FIG. Since the concave groove 34 with the projection depth D ′ and the convex projection 35 with the projection pitch P ′ can be formed on the surface 3, a plurality of stress concentration points 37 are formed by the convex projection 35. The Rukoto.

Below, the formation processing method of the pattern groove | channel by the patterning tool 1 formed by the 1st manufacturing method is demonstrated.
As shown in FIGS. 6 and 7, the semiconductor layer 13 is formed on the upper surface of a metal film (an example of an electrode layer) 12 on the glass substrate 11, and has a stress that does not cause the metal film 12 to be broken or plastically deformed. The rake face 3 is inclined from the vertical direction of the substrate 12 by the rake angle α, and the patterning tool 1 in which the grooves 5 and the protrusions 6 are formed on the rake face 3 is lowered from above by the transfer tool 25 described above. Then, after the contact surface 2 of the patterning tool 1 and the metal film 12 on the glass substrate 11 are contacted, the patterning tool 1 in the tool feed direction X in a state where the vertical stress applied to the patterning tool 1 is kept constant. The semiconductor layer 13 is patterned by moving the pattern groove 16 to form the pattern groove 16.

  In the rake face 3, the optimum value of the rake angle α is changed depending on the film thickness of the semiconductor layer 13, the adhesion strength between the semiconductor layer 13 and the metal film 12, and the rake angle α is usually (−60) to 60 °. Between. Note that the rake angle α in FIG. 6 is a negative angle.

  Here, since the patterning tool 1 presses the metal film 12 with constant vertical stress, for example, even when the glass substrate 11 is warped, the patterning tool 1 is patterned in the tool feed direction X while rubbing the metal film 12 on the contact surface 2. The tool 1 can be moved, and therefore the semiconductor layer 13 can be peeled and removed at the interface between the metal film 12 and the semiconductor layer 13.

  When patterning the semiconductor layer 13, when the patterning tool 1 is moved in the tool feed direction X, the five protrusions 6 provided on the rake face 3, that is, the stress concentration points 7 are the starting points. A plurality of cracks 14 can be created in the layer 13.

  As described above, these cracks 14 are generated in close proximity to each other, are connected in the vicinity of the rake face 3, and can be discharged as machining scraps 15 having a projection pitch P or less, so that the pattern groove 16 having a uniform width dimension is formed. Can be formed.

  As described above, according to the embodiment, when the pattern groove 16 is formed, the plurality of cracks 14 are formed in the width W of the patterning tool 1 by providing the plurality of stress concentration points 7 on the rake face 3. Since it can be formed and the processing unit can be made smaller by controlling the position where the crack 14 is generated, the width dimension of the pattern groove 16 can be made uniform, thus reducing the occurrence of peeling in the semiconductor layer 13. be able to.

  Further, according to the embodiment, the patterning tool in the tool feeding direction X with respect to the transfer tool 25 having the groove 23 and the protrusion 24 formed on the surface, which is the reverse pattern of the groove 5 and the protrusion 6, that is, the shape to be transferred. By relatively moving 1, desired grooves 5 and protrusions 6 can be formed on the non-shaped rake face 3, and the patterning tool 1 having the desired grooves 5 and protrusions 6 can be easily manufactured. it can.

  In the above embodiment, four protrusions 6 are formed as stress concentration points 7 by forming four grooves 5 on the rake face 3, but the present invention is not limited to this, and a plurality of protrusions 6 are formed on the rake face 3. A plurality of (not limited to five) stress concentration points 7 may be provided by providing a protruding member or the like.

  In the above embodiment, when the patterning tool 1 is formed, the transfer tool 25 in which the groove 23 and the protrusion 24 are formed on the surface of the master portion 21, and the transfer in which the resist pattern 32 is formed on the surface of the substrate 31. While the non-shaped rake face 3 of the patterning tool 1 is pressed against the tool 36, the tool 36 is moved relative to the tool feed direction X, but may be moved in the direction opposite to the tool feed direction X.

  In the pattern groove forming method of the above embodiment, the pattern groove is formed using the patterning tool formed by the first manufacturing method. However, the patterning tool formed by the second manufacturing method is used. Even if is used, a plurality of cracks can be formed within the width W of the patterning tool 1 and the processing unit can be reduced by controlling the position where the cracks are generated, so that the width dimension of the pattern groove is made uniform. Therefore, occurrence of peeling in the semiconductor layer can be reduced.

It is a perspective view of the patterning tool manufactured by the 1st manufacturing method in an embodiment of the invention. It is a perspective view of the 1st manufacturing method of the patterning tool. It is a perspective view of the 2nd manufacturing method of the patterning tool. It is a side view of the manufacturing method of the patterning tool. It is a perspective view of the patterning tool manufactured by the said 2nd manufacturing method. It is a side view in the patterning process by the patterning tool. It is the schematic showing the contact state of the protrusion part of a rake face and semiconductor layer in the patterning process by the patterning tool. It is a perspective view of the conventional patterning tool. It is the schematic showing the contact state of the protrusion part of the rake face and semiconductor layer in the patterning process by the conventional patterning tool.

Explanation of symbols

1 Patterning tool (groove processing tool)
2 Contact surface 3 Rake surface 4 Relief surface 5 Groove 6 Projection 7 Stress concentration point 11 Glass substrate (substrate)
12 Metal film (electrode layer)
13 Semiconductor film (layer to be processed)
16 Pattern groove 21, 31 Substrate 22, 33 Metal film 23, 24 Groove part 25, 36 Transfer tool 32 Resist pattern W Width D, D 'Projection depth (projection part height or groove depth)
P, P 'Protrusion pitch (interval between protrusions or groove width)
α Rake angle

Claims (3)

In a groove processing tool for forming a pattern groove of a predetermined width dimension on the substrate by moving the tip relative to the substrate while pressing the tip against a processing target layer provided on the substrate,
The tip of the groove processing tool is
A contact surface that contacts the substrate;
A flank located on the rear side in the direction of moving the groove working tool;
The flank and a rake face formed across a predetermined angle,
In the rake face, a plurality of grooves are formed in parallel in a direction perpendicular to the longitudinal direction of the contact surface, which is the width direction of the groove working tool in a state where the rake face is pressed against the processing target layer. A groove processing tool characterized by the above. The width of the tip of the groove working tool, which is the length in the longitudinal direction of the contact surface, is 10 to 200 μm, and the predetermined angle is the angle formed by the flank and the rake face of the groove working tool. The groove working tool according to claim 1, wherein the groove has a groove width of 45 to 120 °, a width of the groove on the rake face of 1 to 20 μm, and a depth of the groove of 1 to 5 μm. In the manufacturing method of a groove processing tool for forming a pattern groove of a predetermined width dimension in a processing target layer provided on a substrate,
In a state where a plurality of groove portions having a shape opposite to that of the pattern groove are formed, and the non-shaped rake face of the groove processing tool formed of diamond is pressed against a transfer tool in which a metal film is formed on the groove portion, A method for manufacturing a groove processing tool, wherein the transfer tool and the groove processing tool are moved relative to each other, and a surface shape formed on the transfer tool is transferred to the rake face.

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