JP2006107470A5

JP2006107470A5 -

Info

Publication number: JP2006107470A5
Application number: JP2005258759A
Authority: JP
Filing date: 2005-09-07
Publication date: 2008-10-23
Anticipated expiration: 2025-09-07

Claims

An antenna circuit, a voltage detection circuit, a current amplification circuit, a signal processing circuit, and a fuse having at least a first end and a second end;
The antenna circuit is electrically connected to the voltage detection circuit and electrically connected to a first end of the fuse;
The voltage detection circuit is electrically connected to the current amplification circuit;
The current amplifier circuit is electrically connected to the second end of the fuse;
The semiconductor device, wherein the signal processing circuit is electrically connected to the second end of the fuse.

In claim 1,
The voltage detection circuit receives a signal received by the antenna circuit,
When a voltage equal to or higher than a threshold voltage of the voltage detection circuit is applied to the voltage detection circuit by the input signal, a detection signal is input to the current amplification circuit,
The semiconductor device according to claim 1, wherein the current amplification circuit causes a current to flow through the fuse by the input detection signal, and the fuse is blown by self-heating.

An antenna circuit, a signal processing circuit, a first transistor, a second transistor, a diode, and a fuse having at least a first end and a second end;
One end of the antenna circuit is electrically connected to one end of the diode, and electrically connected to the first end of the fuse,
The other end of the diode is electrically connected to one of a source or a drain of the first transistor and electrically connected to a gate of the first transistor;
The gate of the first transistor is electrically connected to the gate of the second transistor;
A second end of the fuse is electrically connected to one of a source or a drain of the second transistor, and is electrically connected to one end of the signal processing circuit;
The other end of the antenna circuit is electrically connected to the other of the source and the drain of the first transistor, and is electrically connected to the other of the source and the drain of the second transistor, and the signal A semiconductor device which is electrically connected to the other end of the processing circuit.

In claim 3,
The gate width of the second transistor is n times the gate width of the first transistor.

An antenna circuit; a signal processing circuit; a transistor; a first resistor; a second resistor; a voltage source; a comparator having at least a first input terminal, a second input terminal, and an output terminal; A fuse having one end and a second end;
One end of the antenna circuit is electrically connected to one end of the first resistor, and electrically connected to the first end of the fuse;
The other end of the first resistor is electrically connected to one end of a second resistor, and electrically connected to the first input terminal of the comparator;
A second input terminal of the comparator is electrically connected to one end of a voltage source;
The output terminal of the comparator is electrically connected to the gate of the transistor,
A second end of the fuse is electrically connected to one of a source and a drain of the transistor, and is electrically connected to one end of the signal processing circuit;
The other end of the antenna circuit is electrically connected to the other end of the second resistor, is electrically connected to the other end of the voltage source, and is electrically connected to the other of the source or drain of the transistor. And a semiconductor device which is electrically connected to the other end of the signal processing circuit.

In claim 5,
The semiconductor device is characterized in that the transistor operates when a potential applied to a first input terminal of the comparator is higher than a potential of the voltage source.

Any Oite to one of claims 1 to 6,
The fuse is drawing too much current, by fusing, and wherein a stopping the supply of power to the signal processing circuit.

In any one of Claims 1 thru | or 7,
The fuse is a semiconductor device characterized by comprising a metal wire.

In any one of Claims 1 thru | or 7,
The fuse is a semiconductor device characterized by comprising a semiconductor thin film.

Has a antenna circuit, a signal processing circuit, and a anti-fuse having at least a first end and a second end,
One end of the antenna circuit is electrically connected to one end of the signal processing circuit , and electrically connected to the first end of the antifuse,
The other end of the antenna circuit is electrically connected to the other end of the signal processing circuit and electrically connected to the second end of the antifuse .

In claim 10,
The semiconductor device is characterized in that supply of power to the signal processing circuit is stopped by applying a large voltage to destroy and short circuit the antifuse.

In claim 10 or claim 11 ,
The anti-fuse is a semiconductor device characterized by a pair of the conductive layer, the pair of conductive layers sandwiched by insulating films.

In claim 10 or claim 11,
The anti-fuse to a semiconductor device characterized by comprising the diode.

An IC card, IC tag, RFID, transponder, banknote, securities, passport, electronic device, bag, and clothing having the semiconductor device according to any one of claims 1 to 13 .