JP2006106787A - Electro-optic device and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve picture quality in an electro-optic device by preventing generation of an image due to light leakage in the periphery of an image. <P>SOLUTION: The device has data lines, scanning lines, TFTs and pixel electrodes on a TFT array substrate (10). The substrate has an image display area (10a) specified as a formation area of TFTs and pixel electrodes, and a peripheral area specifying the periphery of the image display area. On the image display area, the device has storage capacitors holding a potential at the pixel electrodes for a predetermined time and capacitor wiring (400) connected to capacitor electrodes constituting the storage capacitors. On a frame area (53) which separates the image display area from the peripheral area, the device has a frame pattern (406) formed of the same film as the capacitor wiring and formed in at least a part of the frame area. The frame pattern is also formed of the same film as wiring (404) connected to an external circuit-connecting terminal (102Q). <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention belongs to the technical field of electro-optical devices such as active matrix driving liquid crystal devices, electrophoretic devices such as electronic paper, and EL (Electro-Luminescence) display devices. The present invention also belongs to a technical field of an electronic apparatus including such an electro-optical device.

  Conventionally, pixel electrodes arranged in a matrix on a substrate, thin film transistors (hereinafter referred to as “TFTs” as appropriate) connected to each of the electrodes, connected to each of the TFTs, and rows and columns There is known an electro-optical device capable of so-called active matrix driving by including a data line, a scanning line, and the like provided in parallel in each direction.

  In addition to the above, the electro-optical device includes a counter substrate disposed opposite to the substrate, and includes a counter electrode facing the pixel electrode on the counter substrate, and further, the pixel electrode and the counter electrode. By providing a liquid crystal layer or the like sandwiched between the electrodes, image display is possible. That is, the alignment state of the liquid crystal molecules in the liquid crystal layer is appropriately changed by a predetermined potential difference set between the pixel electrode and the counter electrode, thereby changing the transmittance of light transmitted through the liquid crystal layer. This makes it possible to display an image.

  The substrate in the electro-optical device includes an image display area in which scanning lines, data lines, pixel electrodes, and the like are provided, a scanning line driving circuit, a data line driving circuit, and an external for supplying predetermined signals to these circuits. And a peripheral region where circuit connection terminals and the like are provided. As a typical example of such an electro-optical device, for example, one described in Patent Document 1 can be cited.

Japanese Patent Application Laid-Open No. 11-223832

  However, the conventional electro-optical device has the following problems. That is, in the peripheral region, a sealing material for bonding the substrate and the counter substrate is usually provided. As this sealing material, a photocurable resin is preferably used because it is easy to handle and a relatively strong adhesive force can be obtained. In this case, in order to cure the sealing material, it is necessary to irradiate light to the sealing material that is sandwiched between the substrate and the counter substrate. On the other hand, in the image display area and the peripheral area, wiring for connecting the scanning lines and data lines to the scanning line driving circuit and the data line driving circuit, and sampling for suitably supplying an image signal to the data lines. Various wirings such as a circuit and an image signal line for supplying the image signal itself need to be formed. According to these, in the predetermined area on the peripheral area, the sealing material and the various wirings etc. need to be formed together. The passage of light is ensured by providing a gap or the like.

  However, according to this, when the completed electro-optical device is actually used, there arises a problem that light leaks through the predetermined gap provided as a light passage. . That is, when the electro-optical device is used as a light valve of a projection display device such as a liquid crystal projector, light is projected onto the light valve and light passing through the light valve is enlarged on the screen. By projecting, an image is displayed. However, if the predetermined gap exists, the light leaking from the gap is mixed into the light passing through the light valve. In such a case, a situation occurs in which an image of a pattern such as the various wirings is reflected around the image on the screen, which results in giving up the quality of the image.

  In the conventional electro-optical device, a storage capacitor may be formed in the image display area in order to improve the potential holding characteristic of the pixel electrode. One electrode constituting the storage capacitor (hereinafter sometimes referred to as “capacitance electrode”) is preferably maintained at a constant potential, and therefore connected to an external circuit connection terminal formed in the peripheral region. Has been done. However, in this case, if a mode in which both are connected via a contact hole is adopted, there is a great possibility that the resistance will be increased due to the contact hole, and the characteristics of each contact hole are different. As a result, the time constant of the capacitor electrode or the wiring extending from the capacitor electrode becomes large, and as a result, a problem such as occurrence of crosstalk on the image may occur. When the wiring is formed so as to cross the image display area, it is observed as so-called lateral crosstalk.

  The present invention has been made in view of the above problems, and prevents the appearance of an image due to light leakage from appearing around the image as much as possible, or by suitably supplying a predetermined potential to the capacitor electrode. An object of the present invention is to provide an electro-optical device capable of displaying a quality image. It is another object of the present invention to provide an electronic apparatus including such an electro-optical device.

  In order to solve the above problems, an electro-optical device according to the present invention is provided with a data line extending in a certain direction on a substrate, a scanning line extending in a direction crossing the data line, and a scanning signal supplied by the scanning line. A switching element; and a pixel electrode to which an image signal is supplied via the switching element by the data line, and the substrate includes an image display area defined as a formation area of the pixel electrode and the switching element; A storage region that defines a periphery of the image display region, and a storage capacitor that holds the potential of the pixel electrode on the image display region for a predetermined period; and a predetermined potential on the capacitor electrode that constitutes the storage capacitor A first wiring to be supplied, and formed as the same film as the first wiring, and constitutes at least a part of a frame region that defines the image display region and the peripheral region And an edge pattern.

In addition, the electro-optical device of the present invention is provided on a substrate.
A data line extending in a certain direction and a scanning line extending in a direction crossing the data line;
A switching element to which a scanning signal is supplied by the scanning line;
A pixel electrode to which an image signal is supplied via the switching element by the data line,
The substrate has an image display area defined as a formation area of the pixel electrode,
In the periphery of the image display area, it has a data line driving circuit and wiring from the data line driving circuit,
On the image display area,
A storage capacitor for holding a potential in the pixel electrode;
A first wiring for supplying a predetermined potential to the capacitor electrode constituting the storage capacitor;
A frame pattern that is formed as the same film as the first wiring and that constitutes at least a part of a frame region located around the image display region,
At least a part of the frame pattern is formed by being divided into strips so as to overlap with a gap between the adjacent wirings, and has a floating potential.

In the electro-optical device according to the present invention, the wiring is controlled by the data line driving circuit, and the electro-optical device according to the present invention is formed on a substrate.
A data line extending in a certain direction and a scanning line extending in a direction crossing the data line;
A switching element to which a scanning signal is supplied by the scanning line;
A pixel electrode to which an image signal is supplied via the switching element by the data line,
The substrate has an image display area defined as a formation area of the pixel electrode,
Around the periphery of the image display area, there is a data line driving circuit, and a lead wiring extending from a sampling circuit controlled by the data line driving circuit,
A frame pattern constituting at least a part of a frame region located around the image display region;
At least a part of the frame pattern is formed by being divided into strips so as to overlap with the gap between the adjacent lead wirings, and is set to a floating potential.

In addition, the electro-optical device of the present invention is provided on a substrate.
A data line extending in a certain direction and a scanning line extending in a direction crossing the data line;
A switching element to which a scanning signal is supplied by the scanning line;
A pixel electrode to which an image signal is supplied via the switching element by the data line,
The substrate has an image display area defined as a formation area of the pixel electrode,
Around the periphery of the image display area, there are a data line driving circuit and a sampling circuit controlled by the data line driving circuit,
A frame pattern constituting at least a part of a frame region located around the image display region;
At least a part of the frame pattern is formed in a strip shape so as to overlap with a gap between adjacent switching elements in the sampling circuit, and has a floating potential.

  According to the electro-optical device of the present invention, the scanning signal is supplied to the thin film transistor which is an example of the switching element through the scanning line, so that ON / OFF thereof is controlled. On the other hand, an image signal is supplied to the pixel electrode through a data line, so that the image signal is applied to or not applied to the pixel electrode in accordance with ON / OFF of the thin film transistor. Accordingly, the electro-optical device according to the present invention can perform so-called active matrix driving. In the present invention, the storage capacitor for holding the potential of the pixel electrode for a predetermined period is formed, so that the potential holding characteristic of the pixel electrode is improved.

  In the present invention, in particular, the substrate has an image display region and a peripheral region, and the former includes the pixel electrode, the switching element, the storage capacitor, and the first wiring. Further, according to the present invention, a frame pattern formed as the same film as the first wiring is provided in at least a part of the peripheral region or the image display region and the frame region defining the peripheral region. Here, for example, when the image display area is rectangular, the frame area is defined as an area bordered by a predetermined width around the rectangular shape. Accordingly, the frame region in this case has a square shape in plan view. Further, the peripheral area is defined as an area farther from the outer edge of the frame area having a square shape when viewed from the center of the image display area. “Being formed as the same film” means that in the manufacturing process of the electro-optical device, the frame pattern and the precursor film of the first wiring are formed on the same occasion and are simultaneously formed on the precursor film. It means that a predetermined patterning process (for example, a photolithography and an etching process) is performed.

  The frame pattern is formed in at least a part of the frame region as described above. Thereby, the progress of the light which is going to pass through the frame region is blocked by the frame pattern. Therefore, according to the present invention, it is possible to prevent the occurrence of light leakage as described in the background art corresponding to the region where the frame pattern is formed. Since it is possible to prevent an image of a pattern such as a wiring from being reflected, it is possible to display a higher quality image.

  In the present invention, the frame pattern may be formed so as to be electrically connected to the first wiring formed in the image display area, or formed so as to be divided by patterning. May be.

  In the present invention, as a configuration for the first wiring to play a role of supplying a predetermined potential to the capacitor electrode, for example, a configuration in which the first wiring is connected to or extends from the capacitor electrode is adopted. Good. Here, “connected to the capacitor electrode” means that, for example, when the capacitor electrode and the first wiring are formed in different layers in the laminated structure constructed on the substrate, a contact hole is interposed between them. Thus, the case of electrically connecting them is included. On the other hand, the first wiring is “extending to the capacitor electrode” means, for example, a pattern having a shape that is continuous with the capacitor electrode in a plane (that is, the pattern is formed in this pattern). In the plane, both the part that can be called the first wiring and the part that can be called the capacitive electrode are included in the same layer.

  Furthermore, just in case, the “frame pattern” referred to in the present invention is formed on the frame region, and therefore only has its name, and the frame pattern has a shape like a frame. (It does not necessarily mean that the frame pattern is formed in “at least a part of the frame region”). Further, such a frame pattern may be formed so as to reach the peripheral region beyond the frame region.

  In another aspect of the electro-optical device according to the aspect of the invention, the electro-optical device further includes a counter substrate disposed to face the substrate, and a sealing material that bonds the substrate and the counter substrate. The frame pattern includes the sealing material. It is formed in at least a part of the seal region to be formed.

  According to this aspect, the substrate and the counter substrate are bonded to each other with a sealing material made of, for example, a photocurable resin. In this case, assuming that the frame region has the above-mentioned square shape, the seal region where the sealing material is formed includes or does not include all or part of the square shape of the frame region. It can be assumed that the frame region is located beyond the outer edge of the frame region and has a square shape slightly larger than the square shape (therefore, at least a part of the seal region is the peripheral region). It is an area included in the

  According to this aspect, since the frame pattern is formed even in the distance from the frame region, the progress of light that attempts to pass through the seal region is also blocked by the frame pattern. . Therefore, according to the present invention, it is possible to more effectively prevent an image of a pattern such as various wirings from appearing around the image, so that a higher quality image can be displayed. It becomes possible.

  In another aspect of the electro-optical device of the present invention, the electro-optical device further includes a counter substrate disposed to face the substrate, and a counter electrode formed on the counter substrate, wherein the frame pattern is electrically connected to the counter electrode. Having a connecting portion that is connected in a connected manner.

  According to this aspect, the frame pattern has a connection portion that is electrically connected to the counter electrode, that is, the counter electrode and the frame pattern are electrically connected, and both are always at the same potential. . According to this, the frame pattern fulfills the two functions of preventing light leakage and supplying the potential to the counter electrode at the same time, thereby simplifying the device configuration.

  In another aspect of the electro-optical device of the present invention, the frame pattern is formed so as to be electrically connected to the first wiring.

  According to this aspect, the frame pattern and the first wiring are always at the same potential. According to this, the frame pattern performs the two functions of preventing light leakage and supplying the potential to the first wiring at the same time, thereby simplifying the apparatus configuration. Incidentally, since the frame pattern and the first wiring are formed as the same film as described above, the phrase “to be formed so as to be electrically connected” typically means that the frame light shielding film and the first wiring are formed. When patterning is performed without dividing both of the precursor films common to one wiring (that is, in this case, there are both a frame pattern portion and a first wiring portion on a planar continuous pattern. Is assumed).

  In addition to this aspect, if the above-described aspect in which the electrical connection between the frame pattern and the counter electrode is achieved, the three of the frame pattern, the counter electrode, and the first wiring are always at the same potential. It will be. According to this, it goes without saying that the simplification of the apparatus configuration is achieved more suitably.

  In an aspect including a connection portion, the connection portion may be provided so as to correspond to a corner portion of the counter substrate.

  According to such a configuration, for example, when the image display area is rectangular, the frame area corresponding to the four corners of the image display area, or a frame area that borders the image display area, or a sticker beyond it It is possible to arrange the connection portions so as to correspond to the four corners of the region. In this case, it is possible to obtain an effect that the image display is not hindered while the electrical connection between the frame pattern and the counter electrode is suitably achieved.

  Note that the “corner portion” in the present embodiment includes not only the four corner portions of the counter substrate itself, but also a certain planar spread from each corner (for example, a concentric circle centered on the corner portion). This is a concept including a portion having a spread. In addition, the fact that the connection portion is “provided corresponding to the corner portion” corresponds to the case where the connection portion is provided at all four corners as described above, and the three or less corners of the image display area. It also includes the case where it is provided.

  In another aspect of the electro-optical device of the present invention, the frame pattern is formed so as to surround the entire periphery of the image display region.

  According to this aspect, since the frame pattern is formed so as to surround the entire periphery of the image display region, in principle, it is also possible to completely block light transmitted through the frame region or the seal region. It is. Therefore, the above-described action of light leakage is more effectively exhibited, so that a higher quality image can be displayed.

  Further, in this aspect, if the frame pattern formed so as to surround the entire periphery of the image display area has a “connection portion” with the counter electrode, the frame pattern and the counter electrode The electrical connection can be made more reliably. This is because every part of the frame pattern is electrically connected (in other words, it is formed as an uninterrupted pattern), and the connection part is an image as in the above example. Since a plurality of display areas can be formed so as to correspond to the four corners of the display area, i.e., the frame pattern, or the four corners of the seal area, even if a part of the frame pattern or the connection part cannot be electrically connected for some reason. Even in such a case, it is possible to realize electrical conduction without delay by other parts (in other words, a redundant structure is taken for the frame pattern or the connection part on the frame pattern). It can be said that.) Accordingly, in such an embodiment, the potential of the counter electrode can be maintained extremely stably, and the alignment state of liquid crystal molecules, which is an example of an electro-optical material sandwiched between the counter electrode and the pixel electrode, can be adjusted. Since it can be suitably performed, a higher quality image can be displayed.

  On the other hand, in the aspect in which the above-described frame pattern has a connection portion that is electrically connected to the counter electrode, the image display area has a rectangular shape in plan view, and the frame pattern has three sides of the rectangular shape. And a second pattern formed along the remaining one side and separated from the first pattern, and the connection portion includes the first pattern It may be present on the first pattern.

  According to such a configuration, first, the frame pattern includes the first pattern formed continuously along the three sides of the image display region having a rectangular shape, and the connection portion includes the first pattern. Since the frame pattern is formed so as to surround the entire periphery of the image display area described above, electrical connection between the frame pattern and the counter electrode can be made more reliably, and the counter electrode Can be maintained extremely stably.

  Further, in this embodiment, in addition to the first pattern, it includes a second pattern formed along the remaining one side of the rectangular shape and separated from the first pattern. The following effects can be obtained. That is, when the region where the second pattern is formed corresponds to the region where the data line driving circuit is formed, for example, the image signal line routed to the sampling circuit controlled by the data line driving circuit And capacitive coupling may occur between the counter electrode on the counter substrate. When this capacitive coupling occurs, energization of one side changes the potential on the other side, making it difficult to display an image as desired. However, according to this aspect, since the second pattern is formed in the region, the second pattern exists between the image signal line and the counter electrode. The generation of capacitive coupling can be suppressed. Therefore, according to this aspect, it is possible to suitably display an image as desired.

  In addition, it cannot be overemphasized that such an effect can be enjoyed in the same manner also in the above-described aspect in which the frame pattern is formed so as to surround the entire periphery of the image display region.

  In addition, the terms “first pattern” and “second pattern” in the present embodiment, and “third pattern” to “sixth pattern” in the embodiments described below are simply each It merely represents a pattern on a semiconductor process defined by an individual concept (in other words, “A” to “F” are merely “names”).

  Alternatively, the image display area has a rectangular shape in a plan view, and the frame pattern is formed along a third pattern formed along two opposite sides of the rectangular shape and the remaining two sides. And the fourth pattern formed by dividing the third pattern, and the connecting portion may be present on the third pattern.

  According to such a configuration, first, the frame pattern includes the third pattern formed along two opposing sides of the image display region having a rectangular shape, and the connection portion is on the third pattern. Exists. In general, the third pattern is assumed to include two straight lines formed by dividing the third pattern. According to this aspect, at least two of the connection portions may exist in each of the two straight wirings. Therefore, the electrical connection between the counter electrode and the frame pattern can be made more reliably.

  In addition to the third pattern, the present aspect includes a fourth pattern formed along the remaining two sides of the rectangular shape and separated from the third pattern. Thus, similarly to the second pattern, when the region where the fourth pattern is formed corresponds to the region where the data line driving circuit is formed, for example, the capacitance between the image signal line and the counter electrode Generation of coupling can be prevented.

  Furthermore, the image display area has a rectangular shape in plan view, and the frame pattern includes a fifth pattern formed continuously except for a portion corresponding to one corner of the rectangular shape, A sixth pattern formed at a portion corresponding to the one corner and separated from the fifth pattern, wherein the connection portion includes the fifth pattern and the sixth pattern; It may be present on at least one of the above.

  According to such a configuration, first, the frame pattern includes the fifth pattern formed continuously except for a portion corresponding to one corner of the image display region having a rectangular shape, and the fifth pattern The connecting portion may be present on the pattern. Therefore, typically, it is considered that there are three connection portions on the fifth pattern.

  Further, in this aspect, in addition to the fifth pattern, the sixth pattern is formed in a portion corresponding to the one corner portion and is divided from the fifth pattern, and The connecting portion may be present on the sixth pattern. Therefore, typically, one connection portion is considered to exist on the sixth pattern.

  As described above, according to this aspect, the above-described effects such as the reliability of the electrical connection between the frame pattern and the counter electrode or the suppression of the occurrence of capacitive coupling between the image signal line and the counter electrode can be obtained in substantially the same manner. .

  In addition, it cannot be overemphasized that the aspect of the frame pattern which concerns on this aspect, or the various aspects regarding the frame pattern mentioned above has the meaning which increases the variation of the formation aspect of a frame pattern. Thereby, it is possible to more easily arrange (or pattern) various wirings routed from the external circuit connection terminal to the data line driving circuit, the scanning line driving circuit, or the connection portion.

  In another aspect of the electro-optical device of the present invention, an external circuit connection terminal formed on the peripheral region along the edge of the substrate, and a second wiring extended to the external circuit connection terminal; Further, at least a part of the second wiring is formed as the same film as the first wiring and electrically connected to the first wiring.

According to this aspect, the external circuit connection terminal and the second wiring are formed in the peripheral region, and at least a part of the second wiring is the same film as the first wiring, and the first wiring And electrically connected. Here, “formed as the same film” has the same meaning as already described regarding the frame pattern and the first wiring. According to this, at least a part of the second wiring and the first wiring are formed in the same layer in the stacked structure formed by the data line, the scanning line, the pixel electrode, and the like, and both are the same. It will be composed of materials. Incidentally, in the present invention, since the first wiring and the frame pattern are formed as the same film, according to this aspect, all of the first wiring, the frame pattern, and the second wiring are formed as the same film. It turns out that.

  According to this, first, since the external circuit connection terminal, the second wiring, and the first wiring can be formed in the same layer, the electrical resistance value between these elements can be reduced.

  Incidentally, in the related art, each element as described above is formed in a separate layer, and as a result, a contact hole or the like may be used for electrical connection between the elements. It was. However, if a contact hole is used, there is a high possibility that a high resistance due to the contact hole is brought about, and a situation in which characteristics may be different for each contact hole. The time constant of the wiring extending from now on becomes large, and as a result, a problem such as the occurrence of crosstalk on the image may occur. When the wiring is formed so as to cross the image display area, it is observed as so-called lateral crosstalk.

  However, in this embodiment, as described above, since the external circuit connection terminal, the second wiring, and the first wiring can be formed in the same layer, it is not necessary to suffer from the above-described problems. is there.

  Secondly, this aspect, an aspect having a connecting portion in the above-described frame pattern, or an aspect in which a frame pattern is formed so as to surround the entire periphery of the image display area, and further, the first pattern, the second pattern An electro-optical device (hereinafter referred to as an electro-optical device in combination) with an aspect having a frame pattern including a pattern, a third pattern, a fourth pattern, a fifth pattern, and a sixth pattern. In particular, regarding the “mode”, the following specific effects are exhibited. That is, in the electro-optical device according to this combination mode, the frame pattern has a connection portion between the frame pattern and the counter electrode. Therefore, the frame pattern is combined with the above-described effects of preventing light leakage. Thus, it also has a function as a wiring for supplying a predetermined potential to the counter electrode. Here, in this combined mode, since the second wiring and the first wiring are formed as the same film together with the frame pattern, the electric resistance value between these elements and the external circuit connection terminals can be lowered. It is possible.

  For this reason, in the combined mode, since the electrical resistance value from the external circuit connection terminal to the second wiring and the frame pattern is kept low, the potential of the frame pattern is stable. Therefore, the potential of the counter electrode can be maintained in a stable state. Further, since the first wiring can be electrically connected to the frame pattern, the potential of the first wiring, and thus the potential of the capacitor electrode connected to or extending to the first wiring can also be maintained in a stable state. It becomes possible.

  Thus, according to the combination mode, the frame pattern, the second wiring, and the first wiring are formed in the same film and electrically connected, and the connection portion exists in the frame pattern. It is possible to more effectively enjoy both the operational effect (lower resistance) according to this aspect and the operational effect (potential supply function for the counter electrode) by having the connection portion.

  In this aspect, the first wiring may be formed on the data line via a first interlayer insulating film.

  According to such a configuration, it is possible to suitably configure a laminated structure including scanning lines, data lines, pixel electrodes, external circuit connection terminals, and the like constructed on the substrate.

That is, first, since the external circuit connection terminal must be provided with an electrode exposed to the outside, it is preferable that the external circuit connection terminal is formed in a relatively upper layer in the laminated structure.
Otherwise, a relatively deep contact hole or the like that leads from the uppermost layer portion of the laminated structure to the electrode must be opened. On the other hand, according to this aspect, since the first wiring is formed on the data line, the second wiring is formed as the same film as the first wiring and is connected to or extends to the external circuit connection terminal. Is also formed on the data line. Therefore, the second wiring is formed in a relatively upper layer in the laminated structure.

  As described above, in this aspect, even if the external circuit connection terminal is formed in a relatively upper layer, the second wiring connected or extended to the external circuit connection terminal is also formed in a relatively upper layer, so that the electrical connection between the two is established. Can be realized without difficulty. Thus, according to this aspect, it is possible to suitably form the laminated structure.

  Alternatively, the first wiring may be formed in a layer immediately below the layer including the pixel electrode.

  According to such a configuration, it is possible to more easily realize the electrical connection between the external circuit connection terminal and the second wiring. That is, since the pixel electrode needs to face the electro-optical material, the first wiring is formed in a layer immediately below the layer including the pixel electrode. As viewed from the layer, it is typically assumed that the insulating layer is formed only by sandwiching one insulating film between the pixel electrode. In this case, the second wiring formed as the same film as the first wiring is also formed in a layer immediately below the layer including the pixel electrode. Therefore, only the insulating film exists. This is because, in the peripheral region, the surface of the insulating film formed immediately below the pixel electrode is usually exposed to the outside.

  Therefore, according to this aspect, it is extremely easy to expose the electrodes constituting the external circuit connection terminals to the outside. The electrical connection with the second wiring may be achieved by extending the second wiring from the electrode.

  Thus, according to this aspect, it is possible to easily realize the electrical connection between the external circuit connection terminal and the second wiring.

  In another aspect of the electro-optical device including the second wiring, the first wiring and the frame pattern are not electrically connected to each other, and the first portion of the second wiring and the first wiring are not formed. One wiring is electrically connected, the second part of the second wiring and the frame pattern are electrically connected, and the first part is connected to the first part of the external circuit connection terminal and the second part. May be connected to the second part of the external circuit connection terminal.

  According to such a configuration, the frame pattern and the first wiring can be maintained at different potentials. In this case, it is noted that the first wiring is for supplying a predetermined potential to the capacitor electrode, and assuming that the counter electrode is connected to the frame pattern, each of the frame pattern and the first wiring Can be maintained at different potentials, which means that the capacitor electrode and the counter electrode can be maintained at different potentials. This is because if the potential at the first portion of the external circuit connection terminal is supplied, the first portion is connected to the first portion of the second wiring, the first wiring, and the capacitance electrode. While the potential is maintained, if a potential different from the certain potential is supplied to the second portion of the external circuit connection terminal, the second portion is connected to the second portion of the second wiring, the frame pattern, and the counter electrode. This is because the counter electrode is maintained at the potential. These are summarized in Table 1 below. In addition, what actualized these each concept is demonstrated as [5th Embodiment] in embodiment of the invention demonstrated later.

  Thereby, according to this aspect, various electric actions generated in the electro-optical device can be suitably adjusted.

  In another aspect of the electro-optical device of the present invention, the first wiring is made of a light shielding material.

  According to this aspect, since the first wiring is a wiring connected to or extending from the capacitor electrode and is formed in the image display area, the first wiring is formed in the image display area. It is possible to realize light shielding corresponding to the area. As a result, it is possible to prevent a situation where light is incident on the semiconductor layer (active layer) constituting the thin film transistor as an example of the switching element. Therefore, it is possible to prevent the occurrence of flicker or the like on the image.

  Further, according to this aspect, the second wiring formed as the same film as the first wiring is also made of the light shielding material. Therefore, the thin film transistor as the switching element formed on the peripheral region can obtain the same operation and effect as described above, so that the thin film transistor can be operated accurately.

  Furthermore, according to this aspect, the frame pattern formed as the same film as the first wiring is also composed of a light shielding material. Therefore, the effect of preventing light leakage can be enjoyed more effectively.

  The “light-shielding material” referred to in this embodiment includes, for example, Al (aluminum) having a relatively high light reflectance, Ti (titanium), Cr (chromium), W (tungsten), Ta (tantalum). ), Mo (molybdenum) and the like containing at least one of refractory metals, including simple metals, alloys, metal silicides, polysilicides, and laminates thereof.

  In another aspect of the electro-optical device of the present invention, the first wiring has a laminated structure made of different materials.

  According to this aspect, for example, the first wiring is configured as a two-layer structure in which a lower layer is made of aluminum and an upper layer is made of titanium nitride. In this case, according to the lower aluminum layer, it is possible to enjoy the light shielding performance due to the high electrical conductivity performance and the relatively high light reflectivity, and at the same time, according to the upper titanium nitride layer, on the first wiring. When patterning a precursor film such as an interlayer insulating film to be formed, or when forming a contact hole in the interlayer insulating film or the like, enjoy the function of preventing the so-called penetration (that is, from the titanium nitride) Can be a so-called etch stop).

  As described above, according to this aspect, the first wiring is configured to have a “stacked structure”, so that the first wiring can have a function of supplying a potential to the capacitor electrode. Therefore, it is possible to add a new function, and it is possible to increase its functionality.

  In addition, it cannot be overemphasized that various structures other than the above-mentioned can be employ | adopted as a "laminated structure" said to this aspect.

  In addition, according to this aspect, the second wiring and the frame pattern formed as the same film as the first wiring also have a laminated structure made of different materials. The selection is based on the function of the second wiring and the frame pattern (that is, the connection between the external circuit connection terminal, the scanning line driving circuit and the data line driving circuit (second wiring), and the potential from the second wiring to the first wiring. Considering the supply bridge (frame pattern), etc., it is better to do it from the viewpoint of adding new functions. In addition, it can be said that the said two-layer structure containing aluminum which is an example of a low resistance material is preferable also from such a viewpoint.

  In another aspect of the electro-optical device of the present invention, the electro-optical device further includes a counter substrate disposed to face the substrate and a light shielding film formed on the counter substrate, and the frame pattern overlaps the light shielding film. Is formed.

  According to this aspect, for example, when light is projected from the counter substrate to the substrate, the frame region is first shielded by the light shielding film, and then shielded by the frame pattern. Thus, according to this aspect, by realizing double light shielding, the above-described effect of preventing light leakage is more effectively achieved.

  In this aspect, the light-shielding film may include a frame light-shielding film formed along the edge of the counter substrate.

  According to such a configuration, since the light shielding film includes the frame light shielding film, the above-described double light shielding is better realized.

  In order to solve the above-described problems, an electronic apparatus according to the present invention includes the above-described electro-optical device according to the present invention (including various aspects thereof).

  According to the electronic apparatus of the present invention, since the electro-optical device of the present invention described above is provided, it is possible to prevent the image of various wiring patterns from being reflected around the image. Various devices such as projectors, LCD TVs, mobile phones, electronic notebooks, word processors, viewfinder type or monitor direct view type video tape recorders, workstations, videophones, POS terminals, touch panels, etc. that can display high-quality images Can be realized.

  Such an operation and other advantages of the present invention will become apparent from the embodiments described below.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, the electro-optical device of the invention is applied to a liquid crystal device.

[First Embodiment]
[Overall configuration of electro-optical device]
First, the overall configuration of the first embodiment according to the electro-optical device of the invention will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view of the electro-optical device when the TFT array substrate is viewed from the side of the counter substrate together with each component formed thereon, and FIG. 2 is a cross-sectional view taken along line HH ′ of FIG. It is. Here, a TFT active matrix driving type liquid crystal device with a built-in driving circuit, which is an example of an electro-optical device, is taken as an example.

  1 and 2, in the electro-optical device according to the first embodiment, the TFT array substrate 10 and the counter substrate 20 are disposed to face each other. A liquid crystal layer 50 is sealed between the TFT array substrate 10 and the counter substrate 20, and the TFT array substrate 10 and the counter substrate 20 are provided with a sealing material 52 provided in a seal region positioned around the image display region 10a. Are bonded to each other.

  The sealing material 52 is made of, for example, an ultraviolet curable resin, a thermosetting resin, or the like for bonding the two substrates, and is applied on the TFT array substrate 10 in the manufacturing process and then cured by ultraviolet irradiation, heating, or the like. It is. Further, in the sealing material 52, a gap material such as glass fiber or glass beads for dispersing the distance (inter-substrate gap) between the TFT array substrate 10 and the counter substrate 20 to a predetermined value is dispersed. In other words, the electro-optical device according to the first embodiment is small and suitable for performing enlarged display for a projector light valve.

  A light-shielding frame light-shielding film 53 that defines the frame area of the image display area 10a is provided on the counter substrate 20 side in parallel with the inside of the seal area where the sealing material 52 is disposed. However, part or all of the frame light shielding film 53 may be provided as a built-in light shielding film on the TFT array substrate 10 side. In the first embodiment, there is a peripheral area that defines the periphery of the image display area 10a. In other words, particularly in the first embodiment, when viewed from the center of the TFT array substrate 10, the distance from the frame light shielding film 53 is defined as the peripheral region.

  A data line driving circuit 101 and an external circuit connection terminal 102 are provided along one side of the TFT array substrate 10 in a region located outside the sealing region in which the sealing material 52 is disposed in the peripheral region. The scanning line driving circuit 104 is provided along two sides adjacent to the one side so as to be covered with the frame light shielding film 53. Further, in order to connect the two scanning line driving circuits 104 provided on both sides of the image display area 10a in this way, the TFT array substrate 10 is covered with the frame light shielding film 53 along the remaining side. A plurality of wirings 105 are provided. Among these, the data line driving circuit 101 and the scanning line driving circuit 104 are connected to the external circuit connection terminal 102 via the wiring 404.

  In addition, vertical conduction members 106 that function as vertical conduction terminals between the two substrates are disposed at the four corners of the counter substrate 20. The vertical conduction member 106 has a configuration in which conductive particles such as silver powder are hardened. On the other hand, the TFT array substrate 10 is provided with vertical conduction terminals in a region facing these corner portions. Thus, electrical conduction can be established between the TFT array substrate 10 and the counter substrate 20.

  In FIG. 2, on the TFT array substrate 10, an alignment film is formed on the pixel electrode 9a after the pixel switching TFT, the scanning line, the data line and the like are formed. On the other hand, on the counter substrate 20, in addition to the counter electrode 21, a lattice-shaped or striped light-shielding film 23 and an alignment film are formed on the uppermost layer portion. Further, the liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several types of nematic liquid crystals are mixed, and takes a predetermined alignment state between the pair of alignment films.

  The electro-optical device according to the first embodiment having the overall configuration as described above is characterized by a specific configuration related to the wiring 404, the vertical conductive member 106, etc. among the various elements described above. This will be described in detail later with reference to 7 etc.

  In addition to the data line driving circuit 101, the scanning line driving circuit 104, and the like, the image signal on the image signal line is sampled and supplied to the data line on the TFT array substrate 10 shown in FIGS. Sampling circuit, precharge circuit for supplying a precharge signal of a predetermined voltage level to a plurality of data lines in advance of an image signal, for inspecting the quality, defects, etc. of the electro-optical device during production or at the time of shipment An inspection circuit or the like may be formed.

[Configuration in the pixel section]
Hereinafter, the configuration of the pixel unit of the electro-optical device according to the first embodiment of the invention will be described with reference to FIGS. 3 to 7. FIG. 3 is an equivalent circuit of various elements and wirings in a plurality of pixels formed in a matrix that forms an image display area of the electro-optical device. FIGS. 4 and 5 are data lines, scanning lines, FIG. 5 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which pixel electrodes and the like are formed. 4 and 5 respectively show the lower layer portion (FIG. 4) and the upper layer portion (FIG. 5) in the laminated structure described later.

  6 is a cross-sectional view taken along line AA ′ when FIGS. 4 and 5 are overlapped, and FIGS. 7A and 7B are circles denoted by a reference symbol Z in FIG. 2, respectively. It is sectional drawing regarding the part in which the up-down conduction | electrical_connection material 106 in FIG. 1 and the enlarged view of an internal part exists, and all are sectional drawings corresponding to the laminated structure shown in FIG. 6 and 7, the scales of the respective layers and members are different from each other in order to make each layer and each member large enough to be recognized on the drawings.

(Pixel circuit configuration)
In FIG. 3, each of a plurality of pixels formed in a matrix that constitutes an image display area of the electro-optical device according to the first embodiment includes a pixel electrode 9a and a TFT 30 for switching control of the pixel electrode 9a. The data line 6 a formed and supplied with an image signal is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. May be.

  Further, the gate electrode 3a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2,..., Gm are lined in this order in the scanning line 11a and the gate electrode 3a at predetermined timing. It is comprised so that it may apply sequentially. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and the image signal S1, S2,... Supplied from the data line 6a is closed by closing the switch of the TFT 30 serving as a switching element for a certain period. Sn is written at a predetermined timing.

  A predetermined level of image signals S1, S2,..., Sn written in the liquid crystal as an example of the electro-optical material via the pixel electrode 9a is held for a certain period with the counter electrode formed on the counter substrate. The The liquid crystal modulates light and enables gradation display by changing the orientation and order of the molecular assembly depending on the applied voltage level. In the normally white mode, the transmittance for incident light is reduced according to the voltage applied in units of each pixel, and in the normally black mode, the light is incident according to the voltage applied in units of each pixel. The light transmittance is increased, and light having a contrast corresponding to the image signal is emitted from the electro-optical device as a whole.

  In order to prevent the image signal held here from leaking, a storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode. The storage capacitor 70 is provided side by side along the scanning line 11a, and includes a capacitor electrode 300 including a fixed potential side capacitor electrode and fixed at a constant potential.

[Specific configuration of pixel section]
Hereinafter, a specific configuration of the electro-optical device that realizes the above-described circuit operation using the data line 6a, the scanning line 11a, the gate electrode 3a, the TFT 30, and the like will be described with reference to FIGS. explain.

  First, in FIG. 4 and FIG. 5, a plurality of pixel electrodes 9a are provided in a matrix on the TFT array substrate 10 (the outline is indicated by dotted lines), and the pixel electrodes 9a are respectively arranged at the vertical and horizontal boundaries. A data line 6a and a scanning line 11a are provided along the line. As will be described later, the data line 6a has a laminated structure including an aluminum film, and the scanning line 11a is made of, for example, a conductive polysilicon film. In addition, the scanning line 11a is electrically connected to the gate electrode 3a facing the channel region 1a ′ indicated by the hatched region rising to the right in the figure through the contact hole 12cv, and the gate electrode 3a is included in the scanning line 11a.

  That is, each of the intersections between the gate electrode 3a and the data line 6a is provided with a pixel switching TFT 30 in which the gate electrode 3a included in the scanning line 11a is opposed to the channel region 1a ′. As a result, the TFT 30 (excluding the gate electrode) is configured to exist between the gate electrode 3a and the scanning line 11a.

  Next, the electro-optical device is opposed to the TFT array substrate 10 made of, for example, a quartz substrate, a glass substrate, or a silicon substrate, as shown in FIG. And a counter substrate 20 made of, for example, a glass substrate or a quartz substrate.

  As shown in FIG. 6, the pixel electrode 9a is provided on the TFT array substrate 10 side, and an alignment film 16 subjected to a predetermined alignment process such as a rubbing process is provided above the pixel electrode 9a. ing. The pixel electrode 9a is made of a transparent conductive film such as an ITO film. On the other hand, a counter electrode 21 is provided on the entire surface of the counter substrate 20, and an alignment film 22 subjected to a predetermined alignment process such as a rubbing process is provided below the counter electrode 21. . The counter electrode 21 is made of a transparent conductive film such as an ITO film, for example, like the pixel electrode 9a described above.

  Between the TFT array substrate 10 and the counter substrate 20 arranged so as to face each other, an electro-optical material such as liquid crystal is sealed in a space surrounded by the above-described sealing material 52 (see FIGS. 1 and 2). 50 is formed. The liquid crystal layer 50 takes a predetermined alignment state by the alignment films 16 and 22 in a state where an electric field from the pixel electrode 9a is not applied.

  On the other hand, on the TFT array substrate 10, in addition to the pixel electrode 9a and the alignment film 16, various configurations including these are provided in a laminated structure. As shown in FIG. 6, this stacked structure includes a first layer including a scanning line 11a, a second layer including a TFT 30 including a gate electrode 3a, a third layer including a storage capacitor 70, and a data line 6a in order from the bottom. And the like, a fifth layer including the capacitor wiring 400 as an example of the “first wiring” according to the present invention, and a sixth layer (uppermost layer) including the pixel electrode 9a and the alignment film 16 and the like. .

  Further, the base insulating film 12 is provided between the first layer and the second layer, the first interlayer insulating film 41 is provided between the second layer and the third layer, and the second interlayer insulating film 42 is provided between the third layer and the fourth layer. A third interlayer insulating film 43 is provided between the fourth layer and the fifth layer, and a fourth interlayer insulating film 44 is provided between the fifth layer and the sixth layer, so that the above-described elements are short-circuited. Is preventing. Further, these various insulating films 12, 41, 42, 43 and 44 are also provided with, for example, a contact hole for electrically connecting the high concentration source region 1d in the semiconductor layer 1a of the TFT 30 and the data line 6a. It has been. Hereinafter, each of these elements will be described in order from the bottom. Of the foregoing, the first to third layers are shown in FIG. 4 as lower layer portions, and the fourth to sixth layers are shown in FIG. 5 as upper layer portions.

(Laminated structure / Structure of first layer-Scanning line, etc.)
First, for example, the first layer includes at least one of high melting point metals such as Ti, Cr, W, Ta, and Mo, a metal simple substance, an alloy, a metal silicide, a polysilicide, and a stack of these, Alternatively, a scanning line 11a made of conductive polysilicon or the like is provided. The scanning lines 11a are patterned in stripes along the X direction in FIG. More specifically, the stripe-shaped scanning line 11a includes a main line portion extending along the X direction in FIG. 4 and a protruding portion extending in the Y direction in FIG. 4 from which the data line 6a or the capacitor wiring 400 extends. ing. Note that the protruding portions extending from the adjacent scanning lines 11a are not connected to each other, and therefore, the scanning lines 11a are divided one by one.

(Laminated structure / Second layer structure-TFT etc.)
Next, the TFT 30 including the gate electrode 3a is provided as the second layer. As shown in FIG. 6, the TFT 30 has an LDD (Lightly Doped Drain) structure, and includes the above-described gate electrode 3a, for example, a polysilicon film, and a channel formed by an electric field from the gate electrode 3a. The channel region 1a ′ of the semiconductor layer 1a to be formed, the insulating film 2 including a gate insulating film that insulates the gate electrode 3a from the semiconductor layer 1a, the low concentration source region 1b and the low concentration drain region 1c in the semiconductor layer 1a, and the high concentration A source region 1d and a high concentration drain region 1e are provided.

  In the first embodiment, a relay electrode 719 is formed on the second layer as the same film as the gate electrode 3a. As shown in FIG. 4, the relay electrode 719 is formed in an island shape so as to be positioned approximately at the center of one side extending in the X direction of each pixel electrode 9 a as viewed in a plan view. Since the relay electrode 719 and the gate electrode 3a are formed as the same film, when the latter is made of a conductive polysilicon film or the like, the former is also made of a conductive polysilicon film or the like.

(Laminated structure / Structure between the first and second layers-Underlying insulating film)
As shown in FIG. 6, a base insulating film 12 made of, for example, a silicon oxide film is provided on the scanning line 11 a described above and below the TFT 30. In addition to the function of interlayer insulating the TFT 30 from the scanning line 11a, the base insulating film 12 is formed on the entire surface of the TFT array substrate 10, thereby causing roughness during polishing of the surface of the TFT array substrate 10 and dirt remaining after cleaning. It has a function of preventing changes in the characteristics of the pixel switching TFT 30.

  Groove-shaped contact holes 12cv along the channel length direction of the semiconductor layer 1a extending along the data line 6a described later are dug in the base insulating film 12 on both sides of the semiconductor layer 1a in plan view. In correspondence with the contact hole 12cv, the gate electrode 3a stacked above the contact hole 12cv includes a concave portion formed on the lower side. Further, since the gate electrode 3a is formed so as to fill the entire contact hole 12cv, a side wall portion 3b formed integrally with the gate electrode 3a is extended. ing. As a result, the semiconductor layer 1a of the TFT 30 is covered from the side as seen in a plan view as shown in FIG. 4, so that at least the incidence of light from this portion is suppressed. It has become.

  Further, as shown in FIG. 4, the side wall 3b is formed so as to fill the contact hole 12cv, and its lower end is in contact with the scanning line 11a. Here, since the scanning line 11a is formed in a stripe shape as described above, the gate electrode 3a and the scanning line 11a existing in a certain row are always at the same potential as long as attention is paid to the row.

(Laminated structure / 3rd layer configuration-storage capacity, etc.)
Now, as shown in FIG. 6, a storage capacitor 70 is provided in the third layer following the second layer. The storage capacitor 70 includes a lower electrode 71 as a pixel potential side capacitor electrode connected to the high concentration drain region 1e of the TFT 30 and the pixel electrode 9a, and a capacitor electrode 300 as a fixed potential side capacitor electrode. It is formed by arrange | positioning through. According to the storage capacitor 70, it is possible to remarkably improve the potential holding characteristic in the pixel electrode 9a. Further, as can be seen from the plan view of FIG. 4, the storage capacitor 70 according to the first embodiment is formed so as not to reach the light transmission region substantially corresponding to the formation region of the pixel electrode 9a ( In other words, the pixel aperture ratio of the entire electro-optical device is kept relatively large (because it is formed so as to fit within the light-shielding region), thereby enabling a brighter image to be displayed.

  Here, a configuration in which the electrode as the pixel potential side capacitor electrode is provided on the upper side of the storage capacitor 70 opposite to the lower electrode 71 may be employed. In this case, as a matter of course, the capacitor electrode 300 as the fixed potential side capacitor electrode is provided below the storage capacitor 70. As a preferred example, the pixel potential side capacitance electrode is the same film as the extended high concentration drain region 1e of the high concentration drain region 1e of the TFT 30, and the capacitance electrode 300 as the fixed potential side capacitance electrode is further below the TFT 30. And the same layer as the light shielding layer for shielding the incident light entering the TFT 30 from below. In this case, a capacitor wiring 400 described later is preferably a film in the same layer as the capacitor electrode 300 serving as a fixed potential side capacitor electrode, because the structure is simple, but is not limited thereto.

  More specifically, the lower electrode 71 is made of, for example, a conductive polysilicon film and functions as a pixel potential side capacitor electrode. However, the lower electrode 71 may be composed of a single layer film or a multilayer film containing a metal or an alloy. In addition to the function as a pixel potential side capacitor electrode, the lower electrode 71 has a function of relay-connecting the pixel electrode 9a and the high concentration drain region 1e of the TFT 30. Incidentally, the relay connection here is performed through the relay electrode 719.

  The capacitor electrode 300 functions as a fixed potential side capacitor electrode of the storage capacitor 70. In the first embodiment, the capacitance electrode 300 is set to a fixed potential by being electrically connected to a capacitance wiring 400 (described later) having a fixed potential. Here, the capacitor wiring 400 is relayed in the connection for setting the capacitor electrode 300 to a fixed potential. However, for example, the capacitor wire 400 may be extended as the same film as the capacitor electrode 300. With this configuration, the capacitor wiring 400 is not required as a separate layer, the wiring resistance is not increased due to connection resistance, and the process is simplified because there is no need to provide a separate layer as the capacitor wiring 400.

  Further, the capacitor electrode 300 includes at least one of refractory metals such as Ti, Cr, W, Ta, and Mo, a simple metal, an alloy, a metal silicide, a polysilicide, a laminate of these, or preferably It consists of tungsten silicide.

  Accordingly, the capacitor electrode 300 has a function of blocking light that is about to enter the TFT 30 from above.

  As shown in FIG. 6, the dielectric film 75 is, for example, a relatively thin silicon oxide film such as an HTO (High Temperature Oxide) film, an LTO (Low Temperature Oxide) film having a film thickness of about 5 to 200 nm, or a silicon nitride film. Consists of From the viewpoint of increasing the storage capacitor 70, the thinner the dielectric film 75 is, the better as long as the reliability of the film is sufficiently obtained.

  In the first embodiment, as shown in FIG. 6, the dielectric film 75 has a two-layer structure in which a lower layer is a silicon oxide film 75a and an upper layer is a silicon nitride film 75b. The upper silicon nitride film 75b is patterned to a size slightly larger than the lower electrode 71 of the pixel potential side capacitor electrode, and is formed so as to fit within the light shielding region (non-opening region).

(Laminated structure, configuration between second and third layers-first interlayer insulating film)
On the TFT 30 to the gate electrode 3a and the relay electrode 719 described above and below the storage capacitor 70, for example, NSG (non-silicate glass), PSG (phosphorus silicate glass), BSG (boron silicate glass), BPSG ( A silicate glass film such as boron phosphorus silicate glass), a silicon nitride film, a silicon oxide film, or the like, or a first interlayer insulating film 41 preferably made of NSG is formed.

  A contact hole 81 that electrically connects the high-concentration source region 1d of the TFT 30 and a data line 6a described later is opened in the first interlayer insulating film 41 while penetrating the second interlayer insulating film 42, which will be described later. Has been. The first interlayer insulating film 41 is provided with a contact hole 83 that electrically connects the high-concentration drain region 1 e of the TFT 30 and the lower electrode 71 constituting the storage capacitor 70. Further, the first interlayer insulating film 41 is provided with a contact hole 881 for electrically connecting the lower electrode 71 serving as a pixel potential side capacitor electrode constituting the storage capacitor 70 and the relay electrode 719. . In addition, a contact hole 882 for electrically connecting the relay electrode 719 and a second relay electrode 6a2 described later is formed in the first interlayer insulating film 41 while penetrating the second interlayer insulating film described later. Has been.

(Laminated structure / Fourth layer configuration-data lines, etc.)
Now, the data line 6a is provided in the fourth layer following the third layer. As shown in FIG. 6, the data line 6a includes, in order from the lower layer, a layer made of aluminum (see reference numeral 41A in FIG. 6), a layer made of titanium nitride (see reference numeral 41TN in FIG. 6), and a layer made of a silicon nitride film. It is formed as a film having a three-layer structure (see reference numeral 401 in FIG. 6). The silicon nitride film is patterned to a slightly larger size so as to cover the lower aluminum layer and titanium nitride layer.

  In the fourth layer, a capacitor wiring relay layer 6a1 and a second relay electrode 6a2 are formed as the same film as the data line 6a. As shown in FIG. 5, these are not formed so as to have a planar shape continuous with the data line 6 a when viewed in a plan view, but are formed so as to be separated from each other by patterning. Yes. For example, when attention is paid to the data line 6a located on the leftmost side in FIG. 5, the capacitance wiring relay layer 6a1 having a substantially quadrilateral shape on the right side thereof, and further slightly larger than the capacitance wiring relay layer 6a1 on the right side thereof. A second relay electrode 6a2 having a substantially quadrilateral shape with an area is formed.

(Laminated structure / Structure between third and fourth layers-second interlayer insulating film)
Above the storage capacitor 70 described above and below the data line 6a, for example, a silicate glass film such as NSG, PSG, BSG, BPSG, a silicon nitride film, a silicon oxide film, or the like, or preferably TEOS gas is used. A second interlayer insulating film 42 formed by plasma CVD is formed. The second interlayer insulating film 42 is provided with the contact hole 81 for electrically connecting the high-concentration source region 1d of the TFT 30 and the data line 6a, and the relay layer 6a1 for capacitive wiring. A contact hole 801 is formed to electrically connect the capacitor electrode 300 as the upper electrode of the storage capacitor 70. Further, the contact hole 882 is formed in the second interlayer insulating film 42 for electrically connecting the second relay electrode 6a2 and the relay electrode 719.

(Laminated structure / Fifth layer configuration -capacity wiring, etc.)
A capacitor wiring 400 is formed in the fifth layer after the fourth layer. When viewed in plan, the capacitor wiring 400 is formed in a lattice shape so as to extend in the X direction and the Y direction in the drawing, as shown in FIG. The portion extending in the Y direction in the figure in the capacitor wiring 400 is formed so as to cover the data line 6a and wider than the data line 6a. In addition, the portion extending in the X direction in the figure has a notch in the vicinity of the center of one side of each pixel electrode 9a in order to secure a region for forming a third relay electrode 402 described later.

  Further, in FIG. 5, a substantially triangular portion is provided at the corner of the intersecting portion of the capacitor wiring 400 extending in each of the XY directions so as to fill the corner. By providing the capacitor wiring 400 with the substantially triangular portion, light can be effectively shielded from the semiconductor layer 1a of the TFT 30. That is, the light entering the semiconductor layer 1a obliquely from above is reflected or absorbed by the triangular portion and does not reach the semiconductor layer 1a. Therefore, it is possible to suppress generation of light leakage current and display a high-quality image free from flicker.

  The capacitor wiring 400 extends from the image display region 10a where the pixel electrode 9a is disposed to the periphery thereof, and is electrically connected to a counter electrode potential, a constant potential source of a driving circuit and other peripheral circuits, The potential is fixed (see the description of the wiring 404 later).

  In this way, the presence of the capacitive wiring 400 formed so as to cover the entire data line 6a and at a fixed potential can reduce the influence of capacitive coupling generated between the data line 6a and the pixel electrode 9a. It becomes possible to eliminate. That is, it is possible to avoid a situation in which the potential of the pixel electrode 9a fluctuates in response to the energization of the data line 6a, and the possibility of causing display unevenness along the data line 6a on the image. Can be reduced. Particularly in the first embodiment, since the capacitive wiring 400 is formed in a lattice shape, it is possible to suppress this so that unnecessary capacitive coupling does not occur even in the portion where the scanning line 11a extends. It has become.

  In the fifth layer, a third relay electrode 402 is formed as the same film as the capacitor wiring 400. The third relay electrode 402 has a function of relaying an electrical connection between the second relay electrode 6a2 and the pixel electrode 9a through contact holes 804 and 89 described later. The capacity wiring 400 and the third relay electrode 402 are not continuously formed in a planar shape, but are formed so as to be separated from each other by patterning.

  On the other hand, the capacitor wiring 400 and the third relay electrode 402 described above have a two-layer structure in which a lower layer is made of aluminum and an upper layer is made of titanium nitride. As described above, since the capacitor wiring 400 and the third relay electrode 402 include aluminum that is relatively excellent in light reflection performance and includes titanium nitride that is relatively excellent in light absorption performance, the capacitance wiring 400 and the third relay electrode 402 are included. The three relay layers 402 can function as a light shielding layer. That is, according to these, it is possible to block the progress of incident light (see FIG. 6) on the semiconductor layer 1a of the TFT 30 on the upper side.

  In the first embodiment, in particular, in the area other than the image display area 10a, as shown in FIG. 7A and FIG. 7B, the routing wiring extended to the above-described capacitance wiring 400, more specifically, Is formed with a lead wiring composed of a wiring 404 (corresponding to an example of the “second wiring” in the present invention) and a frame pattern 406. Hereinafter, the configuration of the routing wiring will be described with reference to FIGS. FIG. 8 is a diagram having the same concept as in FIG. 1, and is a diagram for clearly illustrating the arrangement relationship between the lead wiring composed of the wiring 404 and the frame pattern 406 and the capacitor wiring 400. In FIG. 8, for the purpose described above, the scale of the wiring 404 or the scale of the frame pattern 406, the planar shape, the arrangement pitch, and the like have been changed so as to be appropriately visible, and FIG. Some of the elements shown in FIG. 5 (for example, the data line driving circuit 101 in FIG. 1 or the third relay electrode 402 in FIG. 5) are omitted as appropriate.

  First, in the peripheral region, as shown in FIGS. 7A and 8, a wiring 404 extending from the capacitive wiring 400 via a frame pattern 406 is formed. That is, the wiring 404 is formed on the third interlayer insulating film 43 as the same film as the capacitor wiring 400 and the third relay electrode 402 (hereinafter also referred to as “capacitor wiring 400 etc.”). Accordingly, the wiring 404 has a two-layer structure in which the lower layer is made of aluminum and the upper layer is made of titanium nitride, as in the case of the capacitance wiring 400 and the third relay electrode 402 described above.

  A part of the wiring 404 constitutes the external circuit connection terminal 102Q described with reference to FIGS. Specifically, by forming a contact hole 44H1 communicating with the wiring 404 in the fourth interlayer insulating film 44 formed on the wiring 404, the upper surface of the wiring 404 is exposed to the outside, so that an external circuit A connection terminal 102Q is formed.

  At this time, when the contact hole 44H1 is opened, the film made of titanium nitride on the wiring 404 may be removed. As a result, when the wiring 404 and the external circuit are electrically connected, the external circuit is directly connected to the lower film made of aluminum, so that the resistance can be reduced on the connection surface. Further, if the film made of titanium nitride on the upper layer of the wiring 404 is left, the film made of titanium nitride is hard when the electro-optical device is inspected via the external circuit connection terminal 102Q. Since the film is a film, there is a concern that the inspection terminal is difficult to be inspected for slipping. However, if the film made of titanium nitride is removed, it is not necessary to suffer such a problem.

  Incidentally, the wiring 404 as shown in FIG. 7A is formed in the same manner for all of the external circuit connection terminals 102 shown in FIG. Those that are in electrical communication with the capacitor wiring 400 are some of them. That is, as shown in FIG. 8 or FIG. 1, among the external circuit connection terminals 102, only the wiring 404 corresponding to the specific external circuit connection terminal 102 </ b> Q is formed to extend from the capacitor wiring 400. The wiring 404 corresponding to the remaining external circuit connection terminals 102 is formed as the same film as the capacitor wiring 400 and the like, but both are formed so as to be separated in patterning.

  On the other hand, in the first embodiment, as shown in FIGS. 7B and 8, a frame pattern 406 extending to the capacitor wiring 400 and the like, and further to the wiring 404 described above is formed. That is, the frame pattern 406 is formed on the third interlayer insulating film 43 as the same film as the capacitor wiring 400 and the like and the frame pattern 406. Accordingly, the frame pattern 406 also has a two-layer structure in which the lower layer is made of aluminum and the upper layer is made of titanium nitride, as in the case of the capacitor wiring 400 and the like.

  As shown in FIG. 8, the frame pattern 406 includes a frame region (that is, a region corresponding to a region where the frame light shielding film 53 is formed) that defines the image display region 10a and the peripheral region in plan view, and the periphery of the frame region. The seal material 52 is formed so as to be filled, or to surround the entire periphery of the image display region 10a, and has a substantially square shape as a whole. As shown in the lower part of FIG. 8, the frame pattern 406 extends to the wiring 404 connected to the specific external circuit connection terminal 102Q. Therefore, the frame pattern 406 and the specific external circuit connection terminal 102Q are Are electrically connected to each other. Further, since the frame pattern 406 extends to the capacitor wiring 400, the capacitor wiring 400 and the specific external circuit connection terminal 102Q are also electrically connected to each other. As a result, the wiring 404, the frame pattern 406, and the capacitor wiring 400 connected to the specific external circuit connection terminal 102Q are always at the same potential.

  Further, as shown in FIG. 7B, a part of the frame pattern 406 is exposed to the outside through the contact hole 44H2, and then filled with the sealing material 52 including the upper and lower conductive members 106. In addition, electrical connection is realized between the counter electrodes 21 (a portion on the frame pattern 406 that contacts the vertical conductive member 106 is referred to as a connection portion 406C). As described with reference to FIG. 1, the connection portions 406 </ b> C are provided at the four corner portions according to the fact that the vertical conductive member 106 is disposed at the four corner portions of the counter substrate 20. .

  As described above, in the first embodiment, the wiring 404, the frame pattern 406, the capacitor wiring 400, and the counter electrode 21 connected to the specific external circuit connection terminal 102Q are always at the same potential.

  Note that when the contact hole 44H2 is opened, the film made of titanium nitride on the frame pattern 406 may be removed. As a result, the vertical conductive member 106 is directly connected to the film made of aluminum under the frame pattern 406, so that low resistance can be realized on the connection surface. In addition, if a film made of titanium nitride is present, the film made of titanium nitride is a hard film, so that the vertical conductive material 106 is not embedded, and the contact area is reduced and the resistance value is increased. However, if the film made of titanium nitride is removed, such a problem can be avoided.

  In FIG. 7, a step adjustment film 11aP is formed as the same film as the scanning line 11a formed in the image display region, and a step adjustment film 3aP is formed as the same film as the gate electrode 3a and the relay electrode 719. Has been. Due to the presence of these step adjustment films 11aP and 3aP, it is possible to make adjustments such as making the overall height of the laminated structure in the image display region and the peripheral region substantially the same.

(Laminated structure / Structure between the 4th and 5th layers-3rd interlayer insulating film)
As shown in FIG. 6, a silicate glass film such as NSG, PSG, BSG, or BPSG, a silicon nitride film, a silicon oxide film, or the like, or preferably TEOS is formed on the data line 6a and below the capacitor wiring 400. A third interlayer insulating film 43 formed by a plasma CVD method using a gas is formed. The third interlayer insulating film 43 includes a contact hole 803 for electrically connecting the capacitor wiring 400 and the capacitor wiring relay layer 6a1, and the third relay electrode 402 and the second relay electrode 6a2. Contact holes 804 for electrical connection are respectively opened.

(Laminated structure, 6th layer, 5th layer and 6th layer configuration-pixel electrode, etc.)
Finally, on the sixth layer, the pixel electrodes 9a are formed in a matrix as described above, and the alignment film 16 is formed on the pixel electrodes 9a. Under the pixel electrode 9a, a silicate glass film such as NSG, PSG, BSG, or BPSG, a silicon nitride film, a silicon oxide film, or the like, or a fourth interlayer insulating film 44 preferably made of NSG is formed. In the fourth interlayer insulating film 44, a contact hole 89 for electrically connecting the pixel electrode 9a and the third relay electrode 402 is formed. Between the pixel electrode 9a and the TFT 30, the contact hole 89, the third relay layer 402, the contact hole 804, the second relay layer 6a2, the contact hole 882, the relay electrode 719, the contact hole 881, the lower electrode 71, and the contact described above. Electrical connection is made through the hole 83.

  In the first embodiment, the surface of the fourth interlayer insulating film 44 is flattened by a CMP (Chemical Mechanical Polishing) process or the like, and a liquid crystal layer caused by steps due to various wirings, elements, etc. existing therebelow. 50 orientation defects are reduced. However, instead of or in addition to performing the planarization process on the fourth interlayer insulating film 44 in this way, the TFT array substrate 10, the base insulating film 12, the first interlayer insulating film 41, the second interlayer insulating film 42, and A planarization process may be performed by digging a groove in at least one of the third interlayer insulating films 43 and embedding a wiring such as the data line 6 a or the TFT 30.

[Effects of the electro-optical device]
According to the electro-optical device of the first embodiment having the above-described configuration, the routing wiring composed of the wiring 404 and the frame pattern 406 described as the configuration of the fifth layer is formed. An effect is produced.

  First of all, in the first embodiment, since the frame pattern 406 is formed in the frame region and the seal region, in the region where the frame pattern 406 is formed, the arrow L1 in FIG. As shown in FIG. 6, since it is possible to prevent light leakage, it is possible to prevent the image of various patterns such as wirings from appearing around the image. Therefore, according to the first embodiment, an image with higher quality can be displayed.

  In particular, since the frame pattern 406 according to the first embodiment is formed so as to surround the entire periphery of the image display region 10a, in principle, light that passes through the frame region or the seal region is completely blocked. Is also possible. Further, the frame pattern 406 has a two-layer structure in which a lower layer is made of aluminum and an upper layer is made of titanium nitride (both correspond to an example of the “light-shielding material” in the present invention). Therefore, the above-described light shielding action is more reliably exhibited. Further, as is apparent from FIG. 8, the frame pattern 406 is formed so as not to overlap the image display region 10a, so that the frame pattern 406 interferes with the light transmitted through the image display region 10a. There is nothing. That is, the image can be displayed as desired. In the case where the sealing material 52 is made of a photocurable resin or the like, the light irradiation necessary for the curing may be performed from above in FIG. 7B, that is, from the counter substrate 20 side. .

  In relation to this, in the first embodiment, since the frame light shielding film 53 is formed on the counter substrate 20, light shielding as indicated by an arrow L2 in FIG. 7B is also realized. It will be. In this case, even if there is light that passes through the frame light-shielding film 53, the light is reflected or absorbed by the frame pattern 406 to be reserved next. Thus, according to the first embodiment, it is possible to realize double light shielding.

  Second, the frame pattern 406 according to the first embodiment is electrically connected to the counter electrode 21 through the vertical conductive member 106 and also electrically connected to the capacitor wiring 400. Thus, the frame pattern 406 has a potential supply to the counter electrode 21 and a potential supply to the capacitor wiring 400 and eventually to the capacitor electrode 300 in addition to the above-described function of preventing light leakage. And 803 and the relay layer 6a1 for capacitive wiring (see FIG. 6). Thereby, simplification of the device configuration is realized.

  In this connection, as shown in FIGS. 8 and 1, the arrangement positions of the vertical conduction members 106 are made to correspond to the four corners of the image display region 10 a, and therefore, between the frame pattern 406 and the counter electrode 21. While the electrical connection is preferably realized, this does not hinder image display. In addition, since the frame pattern 406 is formed so as to surround the entire periphery of the image display region 10a, the electrical connection between the frame pattern 406 and the counter electrode 21 can be made more reliably. This is because all parts of the frame pattern 406 are electrically connected (in other words, formed as an uninterrupted pattern), and the connection part 406C has four corners of the image display area 10a, that is, a frame pattern. Since a plurality of parts are formed so as to correspond to the four corners of 406, even if a part of the frame pattern 406 or one of the four upper and lower conductive members 106 cannot be electrically connected for some reason, This is because electrical continuity can be achieved without delay by other parts.

  As described above, according to the first embodiment, the potential of the counter electrode 21 can be maintained extremely stably, and the liquid crystal molecules in the liquid crystal layer 50 sandwiched between the counter electrode 21 and the pixel electrode 9a can be maintained. Since the alignment state can be suitably adjusted, a higher quality image can be displayed.

  In the first embodiment, as shown in FIG. 8, two external circuit connection terminals 102Q connected to the frame pattern 406 are provided on the left and right in the figure. It is not limited to such a form. For example, a form in which the external circuit connection terminal 102Q connected to the frame pattern 406 is provided only on one of the left and right sides in the drawing may be adopted.

  On the other hand, in the first embodiment, the frame pattern 406 having a function of supplying a potential to the counter electrode 21 and the capacitor wiring 400 as described above is connected to a part of the wiring 404, that is, a specific external circuit connection terminal 102Q. Since the same film as the wiring 404 is formed so as to be electrically connected, these elements are formed in separate layers, for example, and are electrically connected by contact holes or the like. Compared with such a case, the electrical resistance value between the elements can be reduced. Therefore, in addition to realizing a stable potential supply to the counter electrode 21, it is possible to prevent the occurrence of crosstalk due to the high resistance of the capacitor wiring 400 and the like.

  In this connection, in the first embodiment, the wiring 404 and the capacitor wiring 400 are formed on the data line 6 a via the third interlayer insulating film 43. Accordingly, the wiring 404 and the capacitor wiring 400 are formed as the same film, the request that the external circuit connection terminal 102 must be exposed to the outside, and the electrical communication between the wiring 404 and the external circuit connection terminal 102. Can be achieved relatively easily (see FIG. 7A). In the first embodiment, in particular, the wiring 404 and the capacitor wiring 400 are both formed directly below the sixth layer including the pixel electrode 9a, that is, between the pixel electrode 9a only through the fourth interlayer insulating film 44. As a result, the above-described effects can be achieved more effectively.

  That is, with such a configuration, the contact hole 44H1 for configuring the external circuit connection terminal 102 has only to be formed in the fourth interlayer insulating film 44 as shown in FIG. The contact hole 44H1 is relatively easy to form.

[Second Embodiment]
Hereinafter, a second embodiment of the present invention will be described with reference to FIGS. 9 to 11. FIG. 9 is a diagram having the same concept as that in FIG. 8, and is different in the form of the frame pattern. However, in FIG. 9, unlike FIG. 8, the illustration of the capacitor wiring 400 is also omitted. FIG. 10 and FIG. 11 are explanatory diagrams that enlarge the vicinity of the symbol D shown in FIG. 9 and also show the circuit configuration and the like in that portion. In the second embodiment, the entire configuration of the electro-optical device of the first embodiment described above, the configuration of the pixel unit, and the like are almost the same. Therefore, in the following, description of the same parts as those in the first embodiment will be omitted, and description will be mainly given only for the configuration characteristic to the second embodiment.

  In FIG. 9, a frame pattern 461 composed of the frame patterns 461A and 461B is formed. Of these, the frame pattern 461A corresponds to an example of the “first pattern” in the present invention, and as shown in FIG. 9, the three sides of the image display region 10a having a rectangular shape (upper side, left side, and right side in the figure). It is formed continuously along. The frame pattern 461B corresponds to an example of a “second pattern” in the present invention, and is formed along the remaining side (lower side in the drawing) of the image display area 10a and is divided from the frame pattern 461A. (See reference numeral 461G in the figure). Of these, the vertical conductive member 106 is present on the frame pattern 461A.

  According to such a form, the frame pattern 461A and the four upper and lower conductive members 106 on the frame pattern 461A and the four upper and lower conductive members 106 thereon are configured in the same manner as in the first embodiment, so that the frame pattern 461 and the counter electrode 21 are provided. The electrical connection between them can be made more reliably, and the potential of the counter electrode 21 can be maintained extremely stably. In addition, the presence of the frame patterns 461A and 461B provides the effect of preventing light leakage as in the first embodiment.

  In the second embodiment, in particular, the following effects can be obtained by the frame pattern 461B. That is, in the second embodiment, the frame pattern 461B is formed corresponding to a region where the data line driving circuit 101 (see FIG. 1), which is not shown in FIG. 9, is formed.

The configuration in the vicinity of the data line driving circuit 101 is as shown in FIG.
That is, the control line 114 drawn from the data line driving circuit 101 is connected to the gate of the switching element 202 that constitutes the sampling circuit 118.

  On the other hand, the image signal line 115 is connected to the source of the switching element 202 via the lead wiring 116, and the data line 6a is connected to the drain thereof. Accordingly, the ON / OFF of the switching element 202 is controlled by the data line driving circuit 101, thereby controlling whether or not the image signal is supplied from the image signal line 115 to the data line 6a.

  However, in the configuration in the vicinity of the data line driving circuit 101 having such a configuration, capacitive coupling may occur between the lead wiring 116 and the counter electrode 21 on the counter substrate 20. . When this capacitive coupling occurs, energization of one side changes the potential on the other side, making it difficult to display an image as desired.

  However, according to the second embodiment, since the frame pattern 461B is formed in the region as shown in FIG. 10, the frame pattern 461B is formed between the image signal line 115 and the counter electrode 21. Therefore, the generation of the capacitive coupling can be suppressed. Therefore, according to the second embodiment, a desired image can be suitably displayed. Incidentally, in order to obtain such an action more effectively, it is preferable to maintain the frame pattern 461B at a fixed potential. For this purpose, for example, the frame pattern 461B may be connected to a capacitor wiring 400 (see FIG. 8) not shown in FIG.

  In addition, such an effect can be enjoyed similarly in the aspect in which the frame pattern 406 is formed so as to surround the entire periphery of the image display area 10a as in the first embodiment described above.

  Further, in the second embodiment, the frame pattern 461B is formed so as to cover the sampling circuit 118 and the lead-out wiring 116 extending from the sampling circuit 118. However, the present invention is limited to such a form. Not.

  For example, as shown in FIG. 11, a frame pattern 461BB divided into strips may be formed. Incidentally, when such a configuration is adopted, unlike the case of FIG. 10, it is not necessary to maintain these strip-shaped frame patterns 461BB at a fixed potential, and they may be kept floating (floating potential).

[Third Embodiment]
Hereinafter, a third embodiment of the present invention will be described with reference to FIG. Here, FIG. 12 is a diagram having the same concept as FIG. 8, and a frame pattern is formed in a different manner. However, in FIG. 12, unlike FIG. 8, the illustration of the capacitor wiring 400 is also omitted. In the third embodiment, the entire configuration of the electro-optical device of the first embodiment described above, the configuration of the pixel unit, and the like are almost the same. Therefore, in the following, description of the same parts as those in the first embodiment will be omitted, and description will be made mainly on only the characteristic configuration of the third embodiment.

  In FIG. 12, a frame pattern 462 composed of the frame patterns 462C and 462D is formed. Of these, the frame pattern 462C corresponds to an example of the “third pattern” in the present invention, and as shown in FIG. 12, corresponding two sides (left side and right side in the drawing) of the image display region 10a having a rectangular shape. It is formed along. The frame pattern 462D corresponds to an example of a “fourth pattern” in the present invention, and is formed along the remaining two sides (upper side and lower side in the drawing) of the image display area 10a and the frame pattern 462C. (See reference numeral 462G in the figure).

  The vertical conductive member 106 is present on the frame pattern 462C among these.

  According to such a form, two vertical conductive members 106 are respectively provided in the frame pattern 462C formed as two linear patterns along the left side and the right side of the image display region 10a in FIG. Existing. Therefore, in this respect, as in the first embodiment, it can be said that a redundant structure is taken, so that the electrical connection between the frame pattern 462 and the counter electrode 21 can be made more reliably.

  Further, according to the frame pattern 462D, as in the frame pattern 461B of the second embodiment, it is possible to prevent the occurrence of capacitive coupling between the lead-out wiring 116 and the counter electrode 21 as much as possible.

  Obviously, the presence of the frame patterns 462C and 462D provides the effect of preventing light leakage as in the first embodiment.

[Fourth Embodiment]
Below, the 4th Embodiment of this invention is described, referring FIG. Here, FIG. 13 is a diagram having the same concept as FIG. 8, and a frame pattern is formed differently. However, in FIG. 13, unlike FIG. 8, the illustration of the capacitor wiring 400 is also omitted. In the fourth embodiment, the entire configuration of the electro-optical device according to the first embodiment, the configuration of the pixel unit, and the like are almost the same. Therefore, in the following, description of the same parts as those of the first embodiment will be omitted, and description will be mainly given only of the configuration characteristic to the fourth embodiment.

  In FIG. 13, a frame pattern 463 composed of the frame patterns 463E and 463F is formed. Of these, the frame pattern 463E corresponds to an example of the “fifth pattern” in the present invention, and, as shown in FIG. 13, except for a portion corresponding to one corner of the rectangular image display region 10a. It is formed continuously. The frame pattern 463F corresponds to an example of a “sixth pattern” according to the present invention, and is formed in a portion corresponding to the one corner portion and is divided from the frame pattern 463E ( (See reference numeral 463G in the figure). And the up-and-down conduction material 106 exists on both of the frame patterns 463E and 463F among these.

  According to such a configuration, substantially the same effect as the first to third embodiments, that is, reliability of electrical connection between the frame pattern 463 and the counter electrode 21, or between the lead-out wiring 116 and the counter electrode 21. Obviously, the effects of suppressing the occurrence of capacitive coupling and the prevention of light leakage can be obtained in substantially the same manner.

[Fifth Embodiment]
Below, the 5th Embodiment of this invention is described, referring FIG. FIG. 14 is a diagram having the same concept as in FIG. 8, and is different in a frame pattern formation mode and the like. In the fifth embodiment, the entire configuration of the electro-optical device of the first embodiment described above, the configuration of the pixel unit, and the like are almost the same. Therefore, in the following, description of the same parts as in the first embodiment will be omitted, and description will be mainly given only for the configuration characteristic of the fifth embodiment.

  First, in FIG. 14, a frame pattern 464 having a pattern shape substantially the same as that of the fourth embodiment is formed. That is, the frame pattern 464 includes a frame pattern 464E formed continuously except for one corner of the image display region 10a and a frame pattern 464F formed on a portion corresponding to the one corner.

  Each of the frame patterns 464E and 464F has three and one vertical conductive member 106 formed thereon, and a wiring 404 for supplying a potential to the vertical conductive member 106 is formed. As in the fourth embodiment, a part of the wiring 404 is connected to a specific external circuit connection terminal 102Q. However, the wiring 404 according to the fifth embodiment particularly corresponds to an example of the “first portion of the second wiring” according to the present invention, and the specific external circuit connection terminal 102Q is the “external circuit connection terminal” according to the present invention. Corresponds to an example of “the first part”.

  In the fifth embodiment, the frame patterns 464E and 464F are not electrically connected to the capacitor wiring. That is, although the frame pattern 464 and the capacitor wiring 400 ′ are formed as the same film, they are formed so as to be divided for patterning (see reference numeral 46G in the figure). In addition, the wiring 408 is extended to the capacitor wiring 400 ′ that cannot receive the potential supply from the frame pattern 464. The wiring 408 corresponds to an example of the “second portion of the second wiring” according to the present invention, and passes through a gap 464G that separates the frame patterns 464E and 464F, and is connected to a specific external circuit connection terminal 102R (referred to in the present invention). It corresponds to an example of “second part of external circuit connection terminal”).

  In summary, in the fifth embodiment, the wiring 404, the frame pattern 464, the wiring 408, and the capacitor wiring 400 ′ are all formed as the same film (including the third relay electrode 402, of course), but the wiring 404 is included. The frame pattern 464 and the wiring 408 and the capacitor wiring 400 'are electrically connected, but the former and the latter are not electrically connected. .

  According to such a configuration, the potentials applied to the counter electrode 21 and the capacitor wiring 400 ′ and thus the capacitor electrode 300 can be made different. That is, since the counter electrode 21 is connected to the frame pattern 464, the wiring 404, and the specific external circuit connection terminal 102Q via the vertical conductive member 106, the potential for the counter electrode 21 is supplied to the external circuit connection terminal 102Q. Then, the counter electrode 21 can be maintained at the potential. On the other hand, since the capacitor wiring 400 ′, and hence the capacitor electrode 300 (see FIG. 6) electrically connected thereto, is connected to the wiring 408 and the specific external circuit connection terminal 102R, the external circuit connection terminal 102R. In addition, if a potential for the capacitor electrode 300 different from the potential for the counter electrode 21 is supplied, the capacitor electrode 300 can be maintained at the potential. As described above, according to the fifth embodiment, since the counter electrode 21 and the capacitor electrode 300 can be maintained at different potentials, various electric effects generated in the electro-optical device can be suitably adjusted. Can do.

  In the fifth embodiment as well, as in the first to fourth embodiments, a reliable electrical connection between the frame pattern 464 and the counter electrode 21 is ensured, or the capacitance between the image signal line 115 and the counter electrode 21. It is still possible to suppress the occurrence of coupling and to prevent light leakage.

  In the second to fourth embodiments, the frame patterns 461, 462, and 463 are electrically connected to the vertical conductive material 106, the counter electrode 21, and the capacitor wiring 400. It is necessary to supply a common potential to the counter electrode 21 and the capacitor wiring 400 or the capacitor electrode 300 to the connection terminal 102Q. However, the present invention is not limited to such a form. That is, as described in the fifth embodiment, also in the second to fourth embodiments, the capacitor wiring 400 or the capacitor electrode is formed by using the gaps 461G, 462G, and 463G constituting the frame patterns 461, 462, and 463. The potential for 300 may be supplied separately from the potential for the counter electrode 21.

  In the first to fifth embodiments, the potential supplied to the specific external circuit connection terminal 102Q or 102R may be used as a constant potential on the low potential side supplied to the scanning line driving circuit 104. . According to this, the potentials of the counter electrode 21 and the capacitor electrode 300 are the same as the constant potential. Alternatively, instead of the above configuration, the potential supplied to the external circuit connection terminal 102Q or 102R may be used as a constant potential supplied to the data line driving circuit 101.

(Electronics)
Next, an overall configuration, particularly an optical configuration, of an embodiment of a projection color display device as an example of an electronic apparatus using the electro-optical device described in detail as a light valve will be described. FIG. 15 is a schematic cross-sectional view of the projection type color display device.

  In FIG. 15, a liquid crystal projector 1100 as an example of a projection type color display device according to the present embodiment prepares three liquid crystal modules including a liquid crystal device in which a drive circuit is mounted on a TFT array substrate, and each is a light valve for RGB. It is configured as a projector used as 100R, 100G, and 100B. In the liquid crystal projector 1100, when projection light is emitted from a lamp unit 1102 of a white light source such as a metal halide lamp, light components R, G, and R corresponding to the three primary colors of RGB are obtained by three mirrors 1106 and two dichroic mirrors 1108. The light is divided into B and led to the light valves 100R, 100G and 100B corresponding to the respective colors. In particular, the B light is guided through a relay lens system 1121 including an incident lens 1122, a relay lens 1123, and an exit lens 1124 in order to prevent light loss due to a long optical path. The light components corresponding to the three primary colors modulated by the light valves 100R, 100G, and 100B are synthesized again by the dichroic prism 1112 and then projected as a color image on the screen 1120 via the projection lens 1114.

  The present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification, and an electro-optical device with such a change. In addition, electronic devices are also included in the technical scope of the present invention.

FIG. 3 is a plan view of the electro-optical device when the TFT array substrate is viewed from the side of the counter substrate together with each component formed thereon. It is HH 'sectional drawing of FIG. 3 is an equivalent circuit of various elements and wirings in a plurality of pixels formed in a matrix that forms an image display region of an electro-optical device. FIG. 7 is a plan view of a plurality of adjacent pixel groups on a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed, in a lower layer portion (lower layer portion up to reference numeral 70 (storage capacitor) in FIG. 6). Only such a configuration is shown. FIG. 7 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed, and an upper layer portion (an upper layer portion beyond reference numeral 70 (storage capacitor) in FIG. 6) Only the structure which concerns on this is shown. FIG. 6 is a cross-sectional view taken along line AA ′ when FIG. 4 and FIG. 5 are overlapped. FIG. 7 is a cross-sectional view corresponding to the laminated structure shown in FIG. 6, where (a) is an enlarged view of a portion in a circle marked with a symbol Z in FIG. It is an enlarged view. FIG. 2 is a diagram having the same concept as in FIG. 1 and clearly shows the arrangement relationship of both elements in order to explain the configuration of the frame pattern and the capacitor wiring. FIG. 9 is a diagram having the same concept as in FIG. 8, and illustrates a frame pattern according to the electro-optical device of the second embodiment of the invention. It is explanatory drawing which expands the code | symbol D vicinity shown in FIG. 9, and also shows the circuit structure etc. in the said part collectively. It is a figure of the same meaning as FIG. 10, Comprising: The formation aspect of a frame pattern differs is shown. FIG. 9 is a diagram having the same concept as in FIG. 8, and illustrates a frame pattern according to the electro-optical device of the third embodiment of the present invention. FIG. 9 is a diagram having the same concept as in FIG. 8, and illustrates a frame pattern according to the electro-optical device of the fourth embodiment of the invention. FIG. 9 is a diagram having the same concept as in FIG. 8, and illustrates a frame pattern according to the electro-optical device of the fifth embodiment of the invention. It is a top view of the projection type liquid crystal device concerning each embodiment of the present invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... TFT array substrate, 10a ... Image display area, 3a ... Scan line, 6a ... Data line, 30 ... TFT, 9a ... Pixel electrode, 70 ... Storage capacity, 300 ... Capacitive electrode, 400 ... Capacitive wiring (first wiring), 406, 461, 462, 463, 464 ... Frame pattern, 404,408 ... Wiring (second wiring), 101. Data line drive circuit 104 ... Scanning line drive circuit 102 ... External circuit connection terminal 106 ... Vertical conduction material 20 ... Counter substrate 21 ... Counter electrode 53 ... Frame shading film.

Claims (14)

On the board
A data line extending in a certain direction and a scanning line extending in a direction crossing the data line;
A switching element to which a scanning signal is supplied by the scanning line;
A pixel electrode to which an image signal is supplied via the switching element by the data line,
The substrate has an image display area defined as a formation area of the pixel electrode,
In the periphery of the image display area, it has a data line driving circuit and wiring from the data line driving circuit,
On the image display area,
A storage capacitor for holding a potential in the pixel electrode;
A first wiring for supplying a predetermined potential to the capacitor electrode constituting the storage capacitor;
A frame pattern that is formed as the same film as the first wiring and that constitutes at least a part of a frame region located around the image display region,
2. An electro-optical device according to claim 1, wherein at least a part of the frame pattern is divided into strips so as to planarly overlap a gap between adjacent wirings, and has a floating potential. The electro-optical device according to claim 1, wherein the wiring is a lead wiring extending from a sampling circuit controlled by the data line driving circuit. Around the image display area,
An external circuit connection terminal formed along the edge of the substrate, and a second wiring extending to the external circuit connection terminal;
3. At least a part of the second wiring is formed as the same film as the first wiring and is electrically connected to the first wiring. The electro-optical device according to Item. The electro-optical device according to claim 3, wherein the first wiring is formed on the data line via an interlayer insulating film. 5. The electro-optical device according to claim 3, wherein the first wiring is formed in a layer immediately below the layer including the pixel electrode. The electro-optical device according to claim 1, wherein the first wiring is made of a light shielding material. The electro-optical device according to claim 1, wherein the first wiring has a laminated structure made of different materials. A counter substrate disposed opposite to the substrate, and a light shielding film formed on the counter substrate;
The electro-optical device according to claim 1, wherein the frame pattern is formed to overlap the light shielding film. The electro-optical device according to claim 8, wherein the light-shielding film includes a frame light-shielding film formed along a side edge of the counter substrate. On the board
A data line extending in a certain direction and a scanning line extending in a direction crossing the data line;
A switching element to which a scanning signal is supplied by the scanning line;
A pixel electrode to which an image signal is supplied via the switching element by the data line,
The substrate has an image display area defined as a formation area of the pixel electrode,
Around the periphery of the image display area, there is a data line driving circuit, and a lead wiring extending from a sampling circuit controlled by the data line driving circuit,
A frame pattern constituting at least a part of a frame region located around the image display region;
2. An electro-optical device according to claim 1, wherein at least a part of the frame pattern is divided into strips so as to planarly overlap a gap between adjacent lead-out wirings and has a floating potential. On the board
A data line extending in a certain direction and a scanning line extending in a direction crossing the data line;
A switching element to which a scanning signal is supplied by the scanning line;
A pixel electrode to which an image signal is supplied via the switching element by the data line,
The substrate has an image display area defined as a formation area of the pixel electrode,
Around the periphery of the image display area, there are a data line driving circuit and a sampling circuit controlled by the data line driving circuit,
A frame pattern constituting at least a part of a frame region located around the image display region;
2. An electro-optical device according to claim 1, wherein at least a part of the frame pattern is divided into strips so as to overlap with a gap between adjacent switching elements in the sampling circuit and has a floating potential. On the board
A data line extending in a certain direction and a scanning line extending in a direction crossing the data line;
A switching element to which a scanning signal is supplied by the scanning line;
A pixel electrode to which an image signal is supplied via the switching element by the data line,
The substrate has an image display area defined as a formation area of the pixel electrode,
On the image display area,
A storage capacitor for holding a potential in the pixel electrode;
A first wiring for supplying a predetermined potential to the capacitor electrode constituting the storage capacitor;
A frame pattern that is formed as the same film as the first wiring, constitutes at least a part of a frame region located around the image display region, and is supplied with a potential different from the predetermined potential;
2. The electro-optical device according to claim 1, wherein the second wiring from which the first wiring is extended is provided through the gap of the frame pattern. On the board
A data line extending in a certain direction and a scanning line extending in a direction crossing the data line;
A switching element to which a scanning signal is supplied by the scanning line;
A pixel electrode to which an image signal is supplied via the switching element by the data line,
The substrate has an image display area defined as a formation area of the pixel electrode,
On the image display area,
A storage capacitor for holding a potential in the pixel electrode;
A first wiring for supplying a predetermined potential to the capacitor electrode constituting the storage capacitor;
A frame pattern that is formed as the same film as the first wiring and that constitutes at least a part of a frame region located around the image display region,
A region of at least a side of the frame pattern on the data line driving circuit side is formed by being divided as a floating potential,
2. An electro-optical device according to claim 1, wherein at least a region on the side of the scanning line driving circuit side of the frame pattern is formed as the predetermined potential. An electronic apparatus comprising the electro-optical device according to claim 1.

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