JP2006106780A - Electro-optical device and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electro-optical device that can prevent interference of lights, reflected from light reflecting films and also avoid the occurrence of luminance variations and dazzling, and to provide electronic equipment that uses the same. <P>SOLUTION: In a TFT array substrate 10 of a reflection or transflection type electro-optical device, irregular patterns 8g for scattering light are formed on the surface of the light-reflecting films 8a by forming lower side irregularities-forming films 13a at each pixel 100a formed in a matrix form. Here, the pixels 100a are grouped into multiple units by multi-pixels and are arranged so that the irregular patterns 8g have different configuration for each pixel 100a at least with units. In that case, the irregularity patterns 8g of the reference pixels are, for example, rotated and moved and the configuration is differentiated. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an electro-optical device in which a large number of pixels are formed in a matrix, and an electronic apparatus using the electro-optical device. More specifically, the present invention relates to a structure technology of each pixel of the electro-optical device.

  Electro-optical devices such as liquid crystal devices are used as direct-view display devices for various devices. Among such electro-optical devices, a reflective or semi-transmissive / semi-reflective TFT active matrix type liquid crystal device is arranged in a matrix on the surface of the TFT array substrate 10 as shown in FIGS. Each of the large number of pixels 100a is formed with a light reflection film 8a for reflecting external light incident from the counter substrate 20 side toward the counter substrate 20, and is incident from the counter substrate 20 side. The light is reflected on the TFT array substrate 10 side, and an image is displayed by the light emitted from the counter substrate side.

  In a liquid crystal device that displays an image in such a reflection mode, if the directionality of the light reflected by the light reflection film 8a is strong, the viewing angle dependency such as the brightness varies depending on the angle at which the image is viewed is prominent. Come. Therefore, conventionally, a thick photosensitive resin made of an organic resin such as an acrylic resin is applied to the surface of the second interlayer insulating film 5, and then the photosensitive resin is patterned by a photolithography technique to form the light reflecting film 8a. The lower layer side unevenness forming film 13a having a plurality of protrusions or unevenness made of protrusions or holes is formed on the lower layer side, and then the upper layer side unevenness forming film 7a is formed on the surface of the lower layer side unevenness forming film 13a. As a simple shape, a light scattering uneven pattern 8g having a gentle shape is formed on the surface of the light reflection film 8a formed on the upper layer side.

  However, if the uneven pattern 8g on the surface of the light reflecting film 8a is the same in each pixel 100a, interference occurs in the reflected light from the light reflecting film 8a, and there is a problem that the display quality is remarkably lowered.

  Thus, it has been proposed to make the shape of the uneven pattern 8g different for each pixel 100a (see, for example, Patent Document 1).

  In the TFT array substrate 10, when electrically connecting the drain of the pixel switching TFT 30 and the transparent pixel electrode 9 a, the gate insulating film 2 is connected to the drain region of the TFT 30 in any pixel 100 a. The drain electrode 6b is electrically connected through the contact hole 4c formed in the first interlayer insulating film 4, and the second interlayer insulating film 5 and the upper layer side unevenness are formed at a position substantially overlapping with the contact hole 4c. A light reflecting film 8a is electrically connected to the drain electrode 6b through a contact hole 5b formed in the film 7a, and a pixel electrode 9a made of an ITO film is electrically connected to the light reflecting film 8a.

JP-A-10-123508

  However, it is difficult to form different uneven patterns 8g in each of the large number of pixels 100a, and there is a problem that the positions of the unevenness overlap between the pixels 100a. Further, if the uneven pattern 8g is merely different for each pixel 100a, there is a problem that luminance unevenness and glare occur due to variations in scattering reflection characteristics in each pixel 100a. Further, in the conventional electro-optical device, the formation positions of the contact holes 5b are completely aligned in any of the pixels 100a. Therefore, even if the shape of the concavo-convex pattern 8g is different for each pixel 100a, the wall portion of the contact hole 5b is formed. There is a problem that the reflected light from the inclined surface interferes with each pixel.

  In view of the above problems, an object of the present invention is to prevent interference of reflected light from a light reflecting film, and to avoid occurrence of luminance unevenness and glare between pixels, and It is to provide an electronic device using the same.

  In the electro-optical device according to the aspect of the invention, the light reflecting film is electrically connected to the lower or upper conductive layer through the contact hole, and the light reflecting film is also formed in the contact hole. In this case, the contact holes are formed at different positions in the large number of pixels. With this configuration, since the contact hole formation position differs for each pixel, the contact hole does not appear repeatedly even when the electro-optical device is viewed from any direction. Therefore, in the reflected light from the light reflecting film, the contact hole and its peripheral part do not generate interference.

  In the present invention, it is possible to adopt a configuration in which the contact hole is formed at different positions in each of the large number of pixels.

  In the electro-optical device according to the aspect of the invention, the light reflecting film is electrically connected to the lower or upper conductive layer through the contact hole, and the light reflecting film is also formed in the contact hole. In the case where the plurality of pixels are grouped into a plurality of units by a plurality of pixels, the contact hole formation position pattern in each unit is different among the plurality of units. To do.

  In the electro-optical device according to the aspect of the invention, the light reflecting film is electrically connected to the lower or upper conductive layer through the contact hole, and the light reflecting film is also formed in the contact hole. In this case, it is preferable that the position where the contact hole is formed is different for each pixel in each unit.

  The electro-optical device according to the aspect of the invention is characterized in that the formation positions of the contact holes of the pixels located at the same position in each of the plurality of units are different among the plurality of units.

  In the present invention, the contact holes formed in each pixel preferably have the same area.

  In the present invention, when a thin film transistor for pixel switching is formed in each of the large number of pixels, and the light reflection film is electrically connected to the drain electrode of the thin film transistor through the contact hole, The drain electrode is preferably formed over substantially the entire pixel on the lower layer side of the light reflecting film in any of the large number of pixels.

  In yet another aspect of the present invention, a concavo-convex forming layer formed in a state where a plurality of concavo-convex formed of protrusions or holes are dispersed in each of a large number of pixels configured in a matrix on a substrate holding an electro-optic material. A light reflecting film formed on an upper layer side of the concavo-convex forming layer, wherein the concavo-convex pattern for light scattering is formed on the surface of the light reflecting film by the concavo-convex forming layer. The light reflecting film is electrically connected to the lower or upper conductive layer through a contact hole, and the light reflecting film is also formed in the contact hole, and the contact between the multiple pixels. The hole formation position is different.

  In the present invention, since the contact hole formation position is different for each pixel, the contact hole does not appear repeatedly even when the electro-optical device is viewed from any direction. Therefore, in the reflected light from the light reflecting film, the contact hole and its peripheral part do not generate interference.

  In the present invention, when the large number of pixels are grouped into a plurality of units by a plurality of pixels, it is preferable that the formation pattern of the contact hole in the unit is different among the units. In the present invention, the contact hole formation position patterns in the units are different among the units, so that the contact holes do not appear repeatedly even when the electro-optical device is viewed from any direction. Therefore, the contact hole and its peripheral part do not generate interference in the reflected light from the light reflecting film.

  In the present invention, a configuration in which the contact hole is formed at a different position for each pixel in the unit may be adopted. With this configuration, the contact hole formation position in each pixel is different within the unit. Therefore, even if the contact hole formation pattern is the same between the units, light interference is conventionally performed in one pixel cycle. Can be expanded to the unit period, and interference can be suppressed.

  In the present invention, it is preferable that all the positions where the contact holes are formed in the pixels having the same position in the units are different between the units.

  In the present invention, the contact holes formed in each pixel preferably have the same area.

  In the present invention, a pixel switching thin film transistor is formed in each of the large number of pixels, and the light reflection film is electrically connected to the drain electrode of the thin film transistor through the contact hole. In any of the pixels, it is preferable that the pixel is formed over substantially the entire pixel on the lower layer side of the light reflecting film. With this configuration, even if the contact hole formation position is changed, it is not necessary to change the drain electrode formation region accordingly.

  Also in the third aspect of the present invention, it is preferable that the concavo-convex pattern is formed in each of the large number of pixels in a different form. With this configuration, the same uneven pattern does not appear repeatedly even when the electro-optical device is viewed from any direction. Therefore, interference does not occur in the reflected light from the light reflecting film.

In the present invention, for example, if the substrate is a first substrate, a second substrate is disposed opposite to the first substrate, and the liquid crystal as the electro-optical material is held between the substrates, the electro-optics A liquid crystal device can be configured as the device.
In a reference example of the present invention, a concavo-convex forming layer formed in a state in which a plurality of concavo-convex formed of protrusions or holes are dispersed in each of a large number of pixels configured in a matrix on a substrate holding an electro-optic material, A light reflecting film formed on an upper layer side of the unevenness forming layer, and a light scattering unevenness pattern is formed on the surface of the light reflecting film by the unevenness forming layer. When the pixels are grouped into a plurality of units, each pixel is formed in a different form for each pixel in at least the unit, and the projections and depressions of pixels located at the same location in the unit The pattern is different between the units.

  In the reference example of the present invention, the concave / convex pattern is formed with different forms for each pixel in the unit, and the position of each concave / convex pattern in the unit is different between units, so the same concave / convex pattern is repeated, There will be no appearance. Therefore, interference hardly occurs in the reflected light from the light reflecting film.

  In the reference example of the present invention, it is preferable that the protrusions or the holes constituting the unevenness are controlled in terms of a planar shape, a planar size, or a planar position distribution among pixels. That is, in the method of manufacturing an electro-optical device, when the concavo-convex pattern is formed by a photolithography technique, a pixel is formed with respect to a light-transmitting part or a light-shielding part for forming protrusions or holes constituting the concavo-convex in an exposure mask. By controlling the variation of the planar shape, planar size, or planar position distribution between them, and using an exposure mask in which the variation is controlled, the large number of pixels are divided into a plurality of units. When the groups are grouped, at least in the unit, the concave / convex pattern is formed in a different form for each pixel, and the concave / convex pattern of pixels located at the same location in the unit is made different between the units. With this configuration, since unevenness in the planar shape, planar size, or planar position distribution of the unevenness is controlled in the unevenness pattern, occurrence of luminance unevenness and glare between pixels is avoided. can do.

  In another reference example of the present invention, a concavo-convex forming layer formed in a state in which a plurality of concavo-convex formed of protrusions or holes are dispersed in each of a large number of pixels configured in a matrix on a substrate holding an electro-optic material. A light reflecting film formed on an upper layer side of the concavo-convex forming layer, wherein the concavo-convex pattern for light scattering is formed on the surface of the light reflecting film by the concavo-convex forming layer. The concavo-convex pattern is formed in a different form for each pixel, and the protrusions or holes constituting the concavo-convex are controlled in the variation in the planar shape, planar size, or planar position distribution among the pixels. It is characterized by being made.

  That is, in the method of manufacturing an electro-optical device, when the concavo-convex pattern is formed by a photolithography technique, a pixel is formed with respect to a light-transmitting part or a light-shielding part for forming protrusions or holes constituting the concavo-convex in an exposure mask. By controlling the variation of the planar shape, the planar size, or the planar position distribution between them, and using the exposure mask in which the variation is controlled, the uneven pattern is made different for each of the many pixels. It is characterized by being formed in a form.

  In the reference example of the present invention, in the uneven pattern, the uneven shape of the unevenness, the planar size, or the variation in the planar position distribution is controlled, so that the occurrence of uneven brightness and glare between pixels is avoided. can do.

  In a reference example of the present invention, the planar shape of the protrusion or hole constituting the unevenness is, for example, a circle or a polygon. That is, the shape of the light transmitting part or the light shielding part for forming the projections or holes constituting the irregularities in the exposure mask is, for example, a circle or a polygon.

  In the reference example of the present invention, it is preferable that the standard deviation / average value between the pixels of the reflected luminance when viewed from a direction inclined by 10 degrees to 30 degrees from the normal direction with respect to the substrate is within 10%.

  In the reference example of the present invention, it is preferable that a plurality of types of protrusions or holes constituting the unevenness are formed in one pixel with different planar sizes. That is, a plurality of kinds of light-transmitting portions or light-shielding portions for forming projections or holes constituting the unevenness in the exposure mask are formed in a region corresponding to one pixel and having different planar sizes. preferable.

  In the reference example of the present invention, it is preferable that the number of protrusions or holes having the same planar size in one pixel is the same among the pixels. That is, it is preferable that the number of the same size in the area | region equivalent to 1 pixel is equal among the said pixels in the light transmission part or light shielding part for forming the processus | protrusion or hole which comprises the said unevenness | corrugation in the said exposure mask.

  In the reference example of the present invention, when the formation area of the uneven pattern is divided into minute surfaces and the angle between each minute surface and the substrate plane is displayed as a histogram with the presence rate in one pixel, the angle is 3 ° to 10 °. It is preferable that the standard deviation / average value between each pixel of the total presence ratio of the minute surfaces is within 10%.

  In the reference example of the present invention, it is preferable that the standard deviation / average value between the pixels of the total area of the protrusions or holes constituting the unevenness is within 5%. That is, it is preferable that the standard deviation / average value between the pixels of the total area of the light-transmitting part or the light-shielding part for forming the projections or holes constituting the unevenness in the exposure mask is within 5%.

  In the reference example of the present invention, the standard deviation / average value between the pixels of the total area of the protrusions or holes located in a region excluding the region where the black matrix is formed among the protrusions or holes constituting the unevenness. Is preferably within 5%. That is, of the light-transmitting part or the light-shielding part for forming the projections or holes constituting the irregularities in the exposure mask, the light-transmitting part or the light-shielding part located in a region excluding the region where the black matrix is formed. The standard deviation / average value between the pixels of the total area is preferably within 5%.

  In a reference example of the present invention, when a Delaunay diagram is drawn based on the position coordinates of the projections or the centers of the holes constituting the unevenness, the standard deviation / average value of each Delaunay line length is preferably 35% or less. . That is, when the Delaunay diagram is drawn based on the position coordinates of the center of the light transmitting part or the light shielding part for forming the projections or holes constituting the unevenness in the exposure mask, the standard deviation / average value of the Delaunay line length Is preferably 35% or less.

  In the reference example of the present invention, it is preferable that the total area of the protrusions or holes interrupted at the end of the pixel among the protrusions or holes constituting the unevenness is an integral multiple of the area of the protrusions or holes. That is, the total area of the light-transmitting portion or the light-shielding portion, which is interrupted at the end of the pixel, of the light-transmitting portion or the light-shielding portion for forming the projections or holes constituting the projections and depressions in the exposure mask. It is preferably an integral multiple of the area of the light part or the light shielding part. With this configuration, even when the unevenness is interrupted at the end of the pixel, the number and area of the unevenness formed in one pixel can be made substantially the same.

In the reference example of the present invention, it is preferable that the overlapping rate between the pixels of the protrusions or holes constituting the unevenness is 50% or more. That is, it is preferable that the overlapping rate between the pixels of the light transmitting part or the light shielding part for forming the projections or holes constituting the unevenness in the exposure mask is 50% or more. For example, projections and holes constituting the projections and depressions are formed for each pixel by a projection / depression pattern obtained by using a projection / depression pattern larger than one pixel as a reference pattern and rotating the reference pattern around a predetermined position. Determine the position. That is, the position of the light-transmitting part or the light-shielding part is determined based on the concave / convex pattern obtained by using the concave / convex forming pattern larger than one pixel as a reference pattern and rotating the reference pattern around a predetermined position. Using an exposure mask, protrusions and holes constituting the irregularities are formed.

  In the reference example of the present invention, for example, an irregularity formation pattern larger than the total area of m × n pixels constituting the unit is used as a reference pattern, and the reference pattern is rotated around a predetermined position. The positions of the protrusions and the holes constituting the unevenness are determined for each pixel by the unevenness pattern of m × n pixels obtained by moving the pixel. That is, an unevenness forming pattern larger than the total area of m × n pixels is used as a reference pattern, and m × n pixels obtained by rotating the reference pattern around a predetermined position. Protrusions and holes constituting the unevenness are formed using an exposure mask in which the position of the light transmitting part or the light shielding part is determined by the uneven pattern.

  By determining the concavo-convex pattern of each pixel using such a reference pattern, in the concavo-convex pattern, it is possible to control variations in the planar shape, planar size, or planar position distribution of the irregularities. It is possible to easily avoid the occurrence of uneven brightness and glare.

  In the reference example of the present invention, it is preferable to form different concavo-convex patterns in each pixel by moving the center of rotation during the rotational movement.

  In this case, it is preferable to set the center of rotation at a position deviated from the protrusion or hole constituting the unevenness. That is, in the exposure mask, the position of the light transmitting portion or the light shielding portion is determined by setting the center of rotation at a position shifted from the light transmitting portion or the light shielding portion forming the projections or holes constituting the unevenness. It is preferable to form the projections and holes constituting the irregularities using

  In the reference example of the present invention, the light reflecting film is electrically connected to a lower or upper conductive layer through a contact hole, and the light reflecting film is formed avoiding the contact hole. There is. In such a case, it is preferable to set the center of rotation at a position overlapping the contact hole. That is, when the light reflecting film is electrically connected to the lower layer or the upper conductive layer through a contact hole, and the light reflecting film is formed avoiding the inside of the contact hole, It is preferable that the projections and the holes constituting the unevenness are formed using an exposure mask in which the center of rotation is set to a position overlapping the contact hole and the light transmitting portion or the light shielding portion is determined.

  In the reference example of the present invention, when the light reflection film has a light transmission hole for displaying in the transmission mode, the center of rotation may be set in the light transmission hole. preferable. That is, in the case where a light transmission hole for performing display in a transmission mode is formed in the light reflection film, the center of rotation is set in the light transmission hole and the light transmission portion or the light shielding portion is set. It is preferable to form the projections and the holes constituting the irregularities using the exposure mask that determines the above.

  In the reference example of the present invention, for example, a rectangular area having a concavo-convex pattern in which a left end pattern and a right end pattern and a top end pattern and a bottom end pattern have continuity is set as a basic pattern, and a cut-out area from the basic pattern is set as an end The positions of the projections and the holes constituting the projections and depressions are determined with respect to the pixel by a plurality of projections and depressions obtained by parallel movement in the vertical and horizontal directions while maintaining the continuity of the pattern.

  In this case, it is preferable that the cutout region is for a plurality of pixels.

  In the reference example of the present invention, when the cutout region is one pixel, the size of the cutout region is preferably a size corresponding to an opening region excluding a region where a light shielding film is formed in pixels. .

  The electro-optical device according to the present invention is used as a display unit of an electronic apparatus such as a mobile phone or a mobile computer.

  Embodiments of the present invention will be described with reference to the drawings.

[Embodiment 1]
(Basic configuration of electro-optical device)
FIG. 1 is a plan view of an electro-optical device to which the present invention is applied as viewed from the side of a counter substrate together with each component, and FIG. 2 is a cross-sectional view taken along line HH ′ of FIG. FIG. 3 is an equivalent circuit diagram of various elements and wirings in a large number of pixels formed in a matrix in the image display region of the electro-optical device. Note that, in each drawing used in the description of the present embodiment, each layer and each member have different scales so that each layer and each member can be recognized on the drawing.

  1 and 2, the electro-optical device 100 (liquid crystal device) according to this embodiment includes a TFT array substrate 10 (first substrate) and a counter substrate 20 (second substrate) bonded together by a sealing material 52. A liquid crystal 50 as an electro-optical material is sandwiched in a region (liquid crystal sealing region) partitioned by the sealing material 52. A peripheral parting 53 made of a light shielding material is formed in an inner region of the region where the sealing material 52 is formed. A data line driving circuit 101 and a mounting terminal 102 are formed along one side of the TFT array substrate 10 in a region outside the sealing material 52, and the scanning line driving circuit 104 along two sides adjacent to the one side. Is formed. The remaining side of the TFT array substrate 10 is provided with a plurality of wirings 105 for connecting between the scanning line driving circuits 104 provided on both sides of the image display region, and further, under the peripheral parting line 53 and the like. In some cases, a precharge circuit or an inspection circuit is provided. Further, at least one corner portion of the counter substrate 20 is formed with an inter-substrate conductive material 106 for establishing electrical continuity between the TFT array substrate 10 and the counter substrate 20.

  Instead of forming the data line driving circuit 101 and the scanning line driving circuit 104 on the TFT array substrate 10, for example, a TAB (tape automated, bonding) substrate on which a driving LSI is mounted is mounted on the TFT array substrate 10. You may make it connect electrically and mechanically with respect to the terminal group formed in the periphery part via an anisotropic conductive film. In the electro-optical device 100, depending on the type of the liquid crystal 50 to be used, that is, the operation mode such as the TN (twisted nematic) mode, the STN (super TN) mode, and the normally white mode / normally black mode, A polarizing film, a retardation film, a polarizing plate and the like are arranged in a predetermined direction, but are not shown here.

  When the electro-optical device 100 is configured for color display, an RGB color filter is formed together with its protective film on the counter substrate 20 in a region facing each pixel electrode (described later) of the TFT array substrate 10. .

  In the image display area of the electro-optical device 100 having such a structure, as shown in FIG. 3, a large number of pixels 100a are arranged in a matrix, and each of these pixels 100a has a pixel electrode 9a. , And a pixel switching TFT 30 for driving the pixel electrode 9 a is formed, and a data line 6 a for supplying pixel signals S 1, S 2... Sn is electrically connected to the source of the TFT 30. . The pixel signals S1, S2,... Sn written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. Good. Further, the scanning line 3a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2,... Gm are applied to the scanning line 3a in a pulse-sequential manner in this order at a predetermined timing. It is configured. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and the pixel signal S1, S2,... Sn supplied from the data line 6a is turned on by turning on the TFT 30 as a switching element for a certain period. Are written in each pixel at a predetermined timing. Thus, the pixel signals S1, S2,... Sn at a predetermined level written to the liquid crystal through the pixel electrode 9a are held for a certain period with the counter electrode 21 of the counter substrate 20 shown in FIG. .

  Here, the liquid crystal 50 modulates light and enables gradation display by changing the orientation and order of the molecular assembly according to the applied voltage level. In the normally white mode, the amount of incident light passing through the portion of the liquid crystal 50 is reduced according to the applied voltage. In the normally black mode, the incident light is changed according to the applied voltage. The amount of light passing through the portion of the liquid crystal 50 increases. As a result, light having a contrast corresponding to the pixel signals S1, S2,... Sn is emitted from the electro-optical device 100 as a whole.

  In order to prevent the retained pixel signals S1, S2,... Sn from leaking, a storage capacitor 60 may be added in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode. . For example, the voltage of the pixel electrode 9a is held by the storage capacitor 60 for a time that is three orders of magnitude longer than the time when the source voltage is applied. As a result, the charge retention characteristics are improved, and the electro-optical device 100 with a high contrast ratio can be realized. As a method of forming the storage capacitor 60, as illustrated in FIG. 3, the storage capacitor 60 is formed between the storage capacitor 60 and the capacitor line 3b, which is a wiring for forming the storage capacitor 60, or with the previous scanning line 3a. Any of them may be formed between them.

(Configuration of TFT array substrate)
FIG. 4 is a plan view of a plurality of pixel groups adjacent to each other on the TFT array substrate used in the electro-optical device of this embodiment. FIG. 5 is a cross-sectional view of a part of the pixel of the electro-optical device cut at a position corresponding to the line AA ′ in FIG.

  In FIG. 4, pixel electrodes 9a made of a plurality of transparent ITO (Indium Tin Oxide) films are formed in a matrix on the TFT array substrate 10, and a pixel switching TFT 30 is provided for each pixel electrode 9a. Are connected to each other. A data line 6a, a scanning line 3a, and a capacitor line 3b are formed along the vertical and horizontal boundaries of the pixel electrode 9a, and the TFT 30 is connected to the data line 6a and the scanning line 3a. That is, the data line 6a is electrically connected to the high concentration source region 1d of the TFT 30 through the contact hole 4d, and the pixel electrode 9a is electrically connected to the high concentration drain region 1e of the TFT 3 through the contact holes 4c and 5b. Connected to. Further, the scanning line 3 a extends so as to face the channel region 1 a ′ of the TFT 30. Note that the storage capacitor 60 (storage capacitor element) is formed by conducting a conductive portion of the extended portion 1f of the semiconductor film 1 for forming the pixel switching TFT 30, and the lower electrode 41 is connected to the scanning line 3b. The capacitor line 3b in the same layer is overlapped as the upper electrode.

  In each of the pixels 100a configured as described above, a light reflecting film 8a is formed on a lower layer side of the pixel electrode 9a in a region substantially overlapping with the pixel electrode 9a, as will be described later.

  The cross section taken along the line AA ′ of the pixel 100 a configured in this way is shown in FIG. 5 on the surface of the transparent substrate 10 ′, which is the base of the TFT array substrate 10, with a silicon oxide film having a thickness of 300 nm to 500 nm. A base protective film 11 made of (insulating film) is formed, and an island-like semiconductor film 1 a having a thickness of 50 nm to 100 nm is formed on the surface of the base protective film 11. A gate insulating film 2a made of a silicon oxide film having a thickness of about 50 to 150 nm is formed on the surface of the semiconductor film 1a, and a scanning line 3a having a thickness of 300 to 800 nm is formed on the surface of the gate insulating film 2a. It passes as an electrode. In the semiconductor film 1a, a region facing the scanning line 3a via the gate insulating film 2a is a channel region 1a ′. A source region having a low concentration source region 1b and a high concentration source region 1d is formed on one side of the channel region 1a ', and a drain having a low concentration drain region 1c and a high concentration drain region 1e is formed on the other side. A region is formed.

  On the surface side of the pixel switching TFT 30, a first interlayer insulating film 4 made of a silicon oxide film having a thickness of 300 nm to 800 nm and a second interlayer insulating film 5 made of a silicon nitride film having a thickness of 100 nm to 300 nm ( A surface protective film) is formed. A data line 6 a having a thickness of 300 nm to 800 nm is formed on the surface of the first interlayer insulating film 4, and the data line 6 a is a high concentration source via a contact hole 4 d formed in the first interlayer insulating film 4. It is electrically connected to the region 1d. A drain electrode 6b formed simultaneously with the data line 6a is formed on the surface of the first interlayer insulating film 4, and this drain electrode 6b is connected to the high concentration drain through a contact hole 4c formed in the first interlayer insulating film 4. It is electrically connected to the region 1e.

  On the upper layer of the second interlayer insulating film 5, a lower layer side unevenness forming film 13a made of a photosensitive resin such as an organic resin and an upper layer side unevenness forming film 7a made of polysilazane, an organic resin or the like are formed in this order. A light reflecting film 8a made of an aluminum film or the like is formed on the surface of the side unevenness forming film 7a.

  A transparent pixel electrode 9a made of an ITO film is formed on the light reflecting film 8a. The pixel electrode 9a is directly laminated on the surface of the light reflecting film 8a, and the pixel electrode 9a and the light reflecting film 8a are electrically connected. Further, the pixel electrode 9 a is electrically connected to the drain electrode 6 b through a contact hole 5 b formed in the upper layer side unevenness forming film 7 a and the second interlayer insulating film 5.

  Here, the light reflection film 8a is not formed in the contact hole 5b, but is in contact with the pixel electrode 9a, and is substantially electrically connected to the drain electrode 6b through the pixel electrode 9a and the contact hole 5b. Is in a state.

  An alignment film 12 made of a polyimide film is formed on the surface side of the pixel electrode 9a. The alignment film 12 is a film obtained by performing a rubbing process on a polyimide film.

  Further, the extension portion 1f (lower electrode) extending from the high-concentration drain region 1e has a capacitance in the same layer as the scanning line 3a through an insulating film (dielectric film) formed simultaneously with the gate insulating film 2a. The storage capacitor 60 is configured by the line 3b facing as an upper electrode.

  The TFT 30 preferably has an LDD structure as described above, but may have an offset structure in which impurity ions are not implanted into regions corresponding to the low concentration source region 1b and the low concentration drain region 1c. . Further, the TFT 30 may be a self-aligned TFT in which impurity ions are implanted at a high concentration using a gate electrode (a part of the scanning line 3a) as a mask to form high-concentration source and drain regions in a self-aligned manner. .

  In this embodiment, a single gate structure is employed in which only one gate electrode (scanning line 3a) of the TFT 30 is disposed between the source and drain regions. However, two or more gate electrodes may be disposed therebetween. Good. At this time, the same signal is applied to each gate electrode. If the TFT 30 is configured with dual gates (double gates) or more than triple gates in this manner, leakage current at the junction between the channel and the source-drain region can be prevented, and the current during OFF can be reduced. If at least one of these gate electrodes has an LDD structure or an offset structure, the off-current can be further reduced and a stable switching element can be obtained.

(Structure of uneven pattern)
4 and 5, in the TFT array substrate 10, the reflection region of each pixel 100a has a convex surface on the surface of the light reflection film 8a that is out of the formation region of the TFT 30 (light reflection film formation region). An uneven pattern 8g having a portion 8b and a recess 8c is formed.

  In constructing such a concavo-convex pattern 8g, in the TFT array substrate 10 of the present embodiment, an area of the lower layer side of the light reflecting film 8a that overlaps the light reflecting film 8a in a plane is made of an organic photosensitive resin. The lower layer side unevenness forming film 13a is formed on the surface of the second interlayer insulating film 5 with a predetermined distribution as a plurality of columnar protrusions (irregularities). Polysilazane, organic resin, or the like is formed on the lower layer side unevenness forming film 13a. The upper side unevenness forming film 7a made of an insulating film made of a fluid material is laminated. Therefore, a concavo-convex pattern 8g corresponding to the concavo-convex shape of the lower layer side concavo-convex forming film 13a is formed on the surface of the reflective film 8a. There are no edges.

  In addition, after forming the lower layer side unevenness forming film 13a without forming the upper layer side unevenness forming film 7a, the edge of the unevenness (hole 13b) of the lower layer side unevenness forming film 13a is smoothed by performing a baking process. Sometimes.

  Here, the columnar protrusions that form the unevenness in the lower-layer unevenness forming film 13a have a circular or substantially polygonal planar shape.

(Configuration of counter substrate)
In FIG. 5, in the counter substrate 20, a light shielding film 23 called a black matrix or black stripe is formed in a region facing the vertical and horizontal boundary regions of the pixel electrode 9 a formed on the TFT array substrate 10. On the side, a counter electrode 21 made of an ITO film is formed. Further, an alignment film 22 made of a polyimide film is formed on the upper layer side of the counter electrode 21, and this alignment film 22 is a film obtained by rubbing the polyimide film.

(TFT manufacturing method)
A method for manufacturing the TFT array substrate 10 according to this embodiment will be described with reference to FIGS.

  FIGS. 6 and 7 are process cross-sectional views showing the manufacturing method of the TFT array substrate 11 of this embodiment, and in both figures, cross-sections of the TFT formation region and the light reflection film formation region are shown.

  In manufacturing the TFT array substrate 10 of the present embodiment, a method referred to as a so-called low temperature process is adopted as a manufacturing process of the TFT 30 and the like. Since such a method is already well known, the TFT array of the present embodiment is used. Only the processes related to the characteristics of the substrate 10 will be described.

  In manufacturing the TFT array substrate 10 of this embodiment, as shown in FIG. 6A, after forming the TFT 30 on the surface of the substrate 10 ′ made of glass or the like, the contact hole 5b is formed in the second interlayer insulating film 5. Form.

  Next, after thickly applying the organic photosensitive resin 13 to the surface of the second interlayer insulating film 5, the photosensitive resin 13 is exposed through the exposure mask 510. Here, either a negative type or a positive type may be used as the photosensitive resin 13, but FIG. 6A illustrates the case of the positive type as the photosensitive resin 13, and it is desired to remove the photosensitive resin 13. The portion is irradiated with ultraviolet rays through the light transmitting portion 511 of the exposure mask 510.

  Next, the exposed photosensitive resin 13 is developed, and as shown in FIG. 6B, refer to FIG. 5 in a region of the lower layer side of the light reflecting film 8a that overlaps the light reflecting film 8a in a plan view. Then, the lower side unevenness forming film 13a provided with the columnar protrusions and the contact holes 5b described above is formed.

  Next, as shown in FIG. 6C, after applying perhydropolysilazane or a composition containing the same to the surface side of the second interlayer insulating film 5 and the lower-side unevenness forming film 13a, firing, or After applying the flowable material 7 made of an organic resin, as shown in FIG. 6 (D), the upper layer side unevenness provided with the contact hole 5b is formed by patterning using a photolithography technique, exposure, or development. A film 7a is formed.

Perhydropolysilazane is a kind of inorganic polysilazane, and is a coating type coating material that is converted into a silicon oxide film by baking in the air. For example, polysilazane manufactured by Tonen Corporation is an inorganic polymer having a unit of-(SiH ₂ NH)-and is soluble in an organic solvent such as xylene. Accordingly, when this inorganic polymer organic solvent solution (for example, 20% xylene solution) is applied as a coating solution by a spin coating method (for example, 2000 rpm, 20 seconds) and then baked in the atmosphere at a temperature of 450 ° C., moisture and A dense amorphous silicon oxide film equivalent to or better than a silicon oxide film formed by a CVD method by reacting with oxygen can be obtained.

  Here, since the upper layer side unevenness forming film 7a is formed by applying a material having fluidity, the unevenness of the lower layer side unevenness forming film 13a is appropriately canceled on the surface of the upper layer side unevenness forming film 7a. As a result, an uneven pattern 8g having a gentle shape without an edge is formed.

  In addition, when forming the uneven | corrugated pattern 8g of a gentle shape, without forming the upper layer side unevenness | corrugation formation film 7a, a baking process is performed in the state shown to FIG. 6 (B), and the lower layer side unevenness | corrugation formation film 13a What is necessary is just to make an edge into a smooth shape.

  Next, as shown in FIG. 7A, after a metal film 8 having reflectivity such as an aluminum film is formed on the surface of the upper-side unevenness-forming film 7a by sputtering or the like, using a photolithography technique. A resist mask 557 is formed.

  Next, the metal film 8 is etched through the resist mask 557, and the light reflecting film 8a is left in a predetermined region as shown in FIG. On the surface of the light reflection film 8a formed in this way, an uneven pattern 8g of 500 nm or more, further 800 nm or more is formed by the unevenness formed by the holes 13b of the lower layer side unevenness forming film 13a, and the uneven pattern 8g The upper layer side unevenness forming film 7a has a gentle shape without an edge.

  Next, as shown in FIG. 7C, an ITO film 9 having a thickness of 40 nm to 200 nm is formed on the surface side of the light reflecting film 8a by a sputtering method or the like, and then a resist mask 558 is used using a photolithography technique. Form.

  Next, the ITO film 9 is etched through the resist mask 558 to form a pixel electrode 9a electrically connected to the drain electrode 6b as shown in FIG. 7D.

  Thereafter, as shown in FIG. 5, a polyimide film (alignment film 12) is formed on the surface side of the pixel electrode 9a. For this purpose, a polyimide varnish in which 5 to 10% by weight of polyimide or polyamic acid is dissolved in a solvent such as butyl cellosolve or n-methylpyrrolidone is flexographically printed and then heated and cured (baked). Then, the substrate on which the polyimide film is formed is rubbed in a certain direction with a puff cloth made of rayon fibers, and polyimide molecules are arranged in a certain direction near the surface. As a result, the liquid crystal molecules are aligned in a certain direction by the interaction between the liquid crystal molecules filled later and the polyimide molecules.

  As a result, the TFT array substrate 10 is completed.

(Structure of unevenness and unevenness pattern)
FIG. 8 shows that when a large number of pixels are grouped into a plurality of units on the TFT array substrate, at least in the unit, the concavo-convex pattern is formed differently for each pixel, and the same in the unit. It is explanatory drawing which shows a mode that the uneven | corrugated pattern (planar positional distribution of an unevenness | corrugation) of the pixel in a location differs between units. 9, FIG. 10, FIG. 11, and FIG. 12 are explanatory diagrams of the concavo-convex pattern attached to the TFT array substrate of the electro-optical device of this embodiment. FIG. 14 is an explanatory diagram of Delaunay triangles for evaluating the relative distance relationship between the projections and depressions.

  In the electro-optical device 100 of this embodiment, a light reflecting film 8a made of an aluminum film or the like is formed on the lower layer side of the pixel electrode 9a. For this reason, light incident from the counter substrate 20 side can be reflected from the TFT array substrate 10 side and emitted from the counter substrate 20 side. Therefore, if light modulation is performed for each pixel 100a by the liquid crystal 50 during this period, external light can be obtained. A desired image can be displayed using light (reflection mode).

  Further, in this embodiment, the lower layer side unevenness forming film 13a is formed in the lower layer side of the light reflecting film 8a in a region overlapping with the light reflecting film 8a in plan view, and the unevenness corresponding to the lower layer side unevenness forming film 13a is used. Thus, a light scattering uneven pattern 8g is formed on the surface of the light reflecting film 8a. Further, in the concavo-convex pattern 8g, the upper layer side concavo-convex forming film 7a prevents the edge of the lower layer side concavo-convex forming film 13a from appearing. Therefore, when an image is displayed in the reflection mode, the image is displayed with scattered reflected light, and thus the viewing angle dependency is small.

  However, if the concavo-convex pattern 8g on the surface of the light reflecting film 8a is completely the same in each pixel 100a, interference occurs in the reflected light from the light reflecting film 8a.

  Therefore, in this embodiment, as shown in FIG. 8, a large number of pixels 100a formed in a matrix are grouped into a plurality of units 101a, 102a, 103a,... At least units 101a, 102a, 103a. In the figure, the uneven pattern 8g is formed in a different form for each pixel 100a.

  That is, when the lower layer side unevenness forming layer 13a is formed on each pixel 100a, the plane of the columnar projection (unevenness) formed by the lower layer side unevenness forming layer 13a for each pixel 100a belonging to the units 101a, 102a, 103a,. The exposure mask 510 is designed so as to form a concavo-convex pattern 8g (concave / convex patterns A to L) having a different shape, planar size, and planar position distribution.

  Here, a plurality of types of projections and depressions having different planar sizes are formed, but they are shown in the same size in FIGS.

Further, the positions of the uneven patterns A to L in the units 101a, 102a, 103a,... Are different among the units 101a, 102a, 103a,. That is, in the first unit 101a, for example, the concavo-convex pattern A, the concavo-convex pattern B, and the concavo-convex pattern C are arranged from left to right in the upper stage, whereas in the second unit 102a, the upper stage In the third unit 103a, the concavo-convex pattern E, the concavo-convex pattern J, and the concavo-convex pattern A are arranged from left to right in the upper stage.・ ・ In line. Therefore, the uneven pattern of the pixels at the same location in the unit (planar position distribution of the unevenness) is different between the units. When forming such multiple types of uneven patterns, as shown in FIG. When designing the exposure mask 510, for example, the pixel 100a shown in FIG. 9A is set as the reference pixel 100a ′, and the unevenness of the uneven pattern A formed on the reference pixel 100a ′ is set at a predetermined position in the pixel region. By rotating and moving around O1 as indicated by an arrow X, and forming the uneven patterns B, C,... As shown in FIGS. 9B and 9C on the other pixels 100a, The translucent portion 511 of the exposure mask 510 is determined so that different uneven patterns 8g are formed on the pixel 100a.

  Here, the rotation center O1 is set in the pixel region. In such a case, it is preferable to set the rotation center at a position shifted from the center of the lower-layer uneven forming film 13a constituting the unevenness. Moreover, it is preferable to set the rotation center at a position deviated from a circle defining the outer periphery of the lower layer side unevenness forming film 13a. By setting in this way, it is possible to prevent the lower-side unevenness forming film 13a from always being formed at the position that is the center of rotation in each of the unevenness patterns A to L.

  When forming various concavo-convex patterns by such rotational movement, parallel movement may be combined. That is, as shown in FIG. 10B, the reference pixel 100a ′ shown in FIG. 10A is moved at the center position O1, and the concavo-convex pattern 8g is indicated by the arrow X around the position O1. As shown in FIG. 10C, the concavo-convex pattern 8g is indicated by an arrow X around the position O1 while moving the center position O1 to the opposite side of FIG. 10B. Further, the concave / convex position may be determined by further rotational movement.

  Further, when designing the exposure mask 510, the pixel 100a shown in FIG. 11A is used as the reference pixel 100a ', and the unevenness of the uneven pattern A formed on the reference pixel 100a' is set to a predetermined position O2 outside the pixel region. , And as shown in FIG. 11B and FIG. 11C, the concavo-convex patterns B, C... Obtained as shown in FIG. Different uneven patterns 8g may be formed on 100a.

  Further, when designing the exposure mask 510, the pixel 100a shown in FIG. 12A is used as the reference pixel 100a ', and the unevenness of the uneven pattern A formed on the reference pixel 100a' is formed on the contact hole 5b in the pixel region. By rotating around the formation position O3 as indicated by an arrow X, and forming the uneven patterns B, C,... As shown in FIGS. 12B and 12C on the other pixels 100a. A different uneven pattern 8g may be formed on each pixel 100a. Also in this case, as described with reference to FIG. 5, since the light reflection film 8a is not formed in the contact hole 5b, even if the contact hole 5b repeatedly appears at the same position of each pixel, the light reflection film Interference does not occur in the reflected light from 8a.

  Even when the method described with reference to FIGS. 11 and 12 is performed, as described with reference to FIG. 10, the center of rotation is moved during the rotational movement, so that the rotational movement and the parallel movement are performed. May be combined to form different uneven patterns on each pixel.

  Here, in the examples shown in FIGS. 9 to 12, the unevenness of the uneven pattern A formed on the reference pixel 100 a ′ is rotated, but an unevenness forming pattern larger than one pixel is used as a reference pattern, and the reference You may determine the position of the processus | protrusion and hole which comprise the said unevenness | corrugation with respect to each pixel with the uneven | corrugated pattern obtained by rotating and moving a pattern centering | focusing on a predetermined position.

  In addition, a concave / convex forming pattern larger than the total area of m × n pixels 100a constituting the unit is used as a reference pattern, and m × obtained by rotating the reference pattern around a predetermined position × The positions of the protrusions and the holes constituting the unevenness may be determined for each pixel by the unevenness pattern of n pixels.

[Effect of this embodiment]
As described above, in the electro-optical device 100 using the TFT array substrate 10 according to the present embodiment, the uneven pattern 8g is formed in a different form for each pixel 100a in the units 101a, 102a, 103a,. Since the position of the concave / convex pattern 8g differs among the units 101a, 102a, 103a,..., The same concave / convex pattern 8g does not appear repeatedly. Therefore, interference does not occur in the reflected light from the light reflecting film 8a.

  In this embodiment, when the uneven pattern 8g having a different form is formed for each pixel 100a, the uneven pattern 8g obtained by rotating the unevenness formed on the reference pixel 100a ′ around a predetermined position is used. The pixel 100a is formed. For this reason, according to the present embodiment, in each pixel 100a, the planar shape, planar size, or planar positional distribution variation of the lower layer side unevenness forming film 13a is controlled. In other words, in this embodiment, since it corresponds to the image obtained by rotating and transferring the unevenness of the reference pixel 100a, the planar shape, the planar size, or the lower-layer unevenness forming film 13a formed on the reference pixel 100a The variation in the planar position distribution is the same as that of the other pixels 100a, and the variation between the pixels is small.

  For example, in the present embodiment, the lower layer side unevenness forming film 13a is formed in a plurality of types having different planar sizes in one pixel, but such lower layer side unevenness forming film 13a of the same size in one pixel is formed. The number of is equal between pixels.

  Further, as shown in FIG. 13A, the formation area of the concave / convex pattern 8g is divided into minute planes, and as shown in FIG. 13B, the angle θ between each minute surface 8h and the substrate plane (horizontal plane) is set. When the measurement is performed and the existence ratio in one pixel of this angle θ is displayed as a histogram, it is expressed as shown in FIGS. 13C and 13D, and there is a slight difference between the pixels. With regard to such variations, in this embodiment, the standard deviation / average value between the pixels of the total presence ratio of the minute surfaces having the angle θ of 3 ° to 10 ° is set within 10%.

  Further, the standard deviation / average value between the pixels of the total area on which the lower side unevenness forming film 13a is formed is within 5%. Here, in each pixel, a black matrix (light-shielding film) for improving display quality may be formed. In such a case, a columnar protrusion located in a region excluding the region where the black matrix is formed. The standard deviation / average value between the pixels of the total area may be within 5%.

  Furthermore, as shown in FIG. 14, when a Delaunay triangle is drawn from the position coordinates of the centers of the plurality of lower side unevenness forming films 13a, the standard deviation / average value of each Delaunay line length is 35 in any pixel. % Or less.

  Therefore, the standard deviation / average value between the pixels of the reflected luminance when viewed from the direction inclined by 10 to 30 degrees from the normal direction with respect to the TFT array substrate 10 is within 10%. Therefore, it is possible to avoid occurrence of luminance unevenness and glare between pixels.

  As shown in FIG. 15, when the lower layer side unevenness forming film 13a has a discontinuous pattern at the end of the pixel 100a, the discontinuous portion appears on the opposite side, and the lower layer side unevenness forming film 13a is formed. Is preferably an integral multiple of the normal area of the lower-layer uneven surface forming film 13a of this size. With this configuration, even when the lower layer side unevenness forming film 13a is interrupted at the end of the pixel 100a, the number and area of the lower layer side unevenness forming films 13a formed in one pixel are made substantially the same. Can do.

[Modification to Embodiment 1]
In the above embodiment, when the concave / convex pattern is rotated as shown in FIGS. 9 to 12, as shown in FIG. 16, a light transmission hole 8d for displaying in the transmission mode is formed in the light reflection film 8a. If it is, it is preferable to set the center of rotation in the light transmission hole 8d. With this configuration, since the light reflection film 8a is not formed in the light transmission hole 8d, even if the light transmission hole 8d repeatedly appears at the same position of each pixel, it interferes with the reflected light from the light reflection film 8a. Does not occur.

  Moreover, as shown in FIGS. 9-12, it is not restricted to the method of rotating an uneven | corrugated pattern, The structure which translates an uneven | corrugated pattern may be sufficient. That is, as shown in FIG. 17, for example, nine reference patterns in which the patterns of the upper, lower, left, and right borders are connected are connected, and a cutout frame (shown by a dotted line) having the same area as the reference pattern is translated from this pattern The pattern may be cut out at each location.

  According to such a method, the pattern cut out at any location can ensure continuity in the vertical and horizontal directions, and the pattern in the frame can obtain a pattern whose coordinates are translated. Here, the size of the cutout frame is not limited to the size of one pixel, and may be a plurality of pixels depending on the size of the reference pattern.

  In the above embodiment, the lower side unevenness forming film 13a in which the planar shape forms a circular columnar protrusion is described as an example, but the planar shape of the columnar protrusion may be a hexagon, a hexagon, or other polygons. . However, in consideration of mask data and scattering characteristics, the planar shape is preferably a circle, a regular hexagon or a regular octagon. Further, in forming the unevenness, instead of forming the lower side unevenness forming film 13a as a columnar protrusion, the lower side unevenness forming film 13a is formed on substantially the entire surface, and a hole is formed in the lower side unevenness forming film 13a. Concavities and convexities may be formed.

  Further, in the above embodiment, the concave / convex pattern is formed differently for each pixel in the unit, and the position of each concave / convex pattern in the unit is different among the units. The concavo-convex pattern may be formed in a different form.

  Furthermore, in each of the above embodiments, an active matrix liquid crystal device using a top gate TFT as a pixel switching element has been described as an example. However, an active matrix liquid crystal device using a bottom gate TFT is used as an example. The present invention may be applied. The present invention may also be applied to an active matrix liquid crystal device using TFD as a pixel switching element, a passive matrix liquid crystal device, or an electro-optical device using an electro-optical material other than liquid crystal.

[Embodiment 2]
In the first embodiment, the concavo-convex pattern is made different for each pixel, but in this embodiment, the concavo-convex pattern is made different for each pixel and the contact hole position is made different for each pixel. The basic configuration of the electro-optical device according to the present embodiment is the same as that of the first embodiment. Therefore, common portions are denoted by the same reference numerals and description thereof is omitted.

  FIG. 18 is a plan view of a plurality of pixel groups adjacent to each other on the TFT array substrate used in the electro-optical device of this embodiment. FIG. 19 is a cross-sectional view of a part of the pixel of the electro-optical device cut at a position corresponding to the line AA ′ in FIG.

  In FIG. 18, on the TFT array substrate 10, as in the first embodiment, pixel electrodes 9a made of a plurality of transparent ITO films are formed in a matrix in each pixel 100a. On the other hand, pixel switching TFTs 30 are connected to each other. A data line 6a, a scanning line 3a, and a capacitor line 3b are formed along the vertical and horizontal boundaries of the pixel electrode 9a, and the TFT 30 is connected to the data line 6a and the scanning line 3a. Further, the scanning line 3 a extends so as to face the channel region 1 a ′ of the TFT 30.

  The data line 6a is electrically connected to the high concentration source region 1d of the TFT 30 through the contact hole 4d, and the pixel electrode 9a is electrically connected to the drain electrode 6b of the TFT 3 through the contact hole 5b. 6b is electrically connected to the high concentration drain region 1e of the TFT 3 through the contact hole 4c.

  In this embodiment, the drain electrode 6b is formed over substantially the entire pixel, and the contact hole 5b is formed at an arbitrary position in the region where the drain region 6b is formed.

  A cross section taken along the line AA ′ of the pixel 100a configured as described above is expressed as shown in FIG. 19, and a first surface made of a silicon oxide film having a thickness of 300 nm to 800 nm is formed on the surface side of the pixel switching TFT 30. A first interlayer insulating film 4 and a second interlayer insulating film 5 (surface protective film) made of a silicon nitride film having a thickness of 100 nm to 300 nm are formed. A data line 6 a having a thickness of 300 nm to 800 nm is formed on the surface of the first interlayer insulating film 4, and the data line 6 a is a high concentration source via a contact hole 4 d formed in the first interlayer insulating film 4. It is electrically connected to the region 1d.

  A drain electrode 6b formed simultaneously with the data line 6a is formed on the surface of the first interlayer insulating film 4, and this drain electrode 6b is connected to the high concentration drain through a contact hole 4c formed in the first interlayer insulating film 4. It is electrically connected to the region 1e.

  On the upper layer of the second interlayer insulating film 5, a lower layer side unevenness forming film 13a made of a photosensitive resin such as an organic resin and an upper layer side unevenness forming film 7a made of polysilazane, an organic resin or the like are formed in this order. A light reflecting film 8a made of an aluminum film or the like is formed on the surface of the side unevenness forming film 7a.

  A transparent pixel electrode 9a made of an ITO film is formed on the light reflecting film 8a. The pixel electrode 9a is directly laminated on the surface of the light reflecting film 8a, and the pixel electrode 9a and the light reflecting film 8a are electrically connected.

  Here, the light reflecting film 8a is also formed in the contact hole 5b formed in the upper layer side unevenness forming film 7a and the second interlayer insulating film 5, and is electrically connected to the drain electrode 6b through the contact hole 5b. is doing. Further, the pixel electrode 9a made of an ITO film is in a state of being electrically connected to the drain electrode 6b through the light reflecting film 8a.

  The drain electrode 6b of the TFT 30 is formed over substantially the entire pixel 100a on the lower layer side of the light reflecting film 8a. For this reason, as will be described later, even if the position of the contact hole 5b is changed for each pixel 100a, it is not necessary to change the formation position, the formation range, or the like of the drain electrode 6b. On the lower layer side of the light reflecting film 8a, even if the drain electrode 6b is formed over a wide range, the amount of light contributing to display is not reduced.

(Structure of uneven pattern 8g)
18 and 19, also in this embodiment, in the TFT array substrate 10, in the reflective region of each pixel 100a, the region of the surface of the light reflecting film 8a that is out of the region where the TFT 30 is formed (light reflecting film forming region). In addition, a concavo-convex pattern 8g having convex portions 8b and concave portions 8c is formed.

  In constructing such a concavo-convex pattern 8g, in the TFT array substrate 10 of the present embodiment, an area of the lower layer side of the light reflecting film 8a that overlaps the light reflecting film 8a in a plane is made of an organic photosensitive resin. The lower layer side unevenness forming film 13a is formed on the surface of the second interlayer insulating film 5 with a predetermined distribution as a plurality of columnar protrusions (irregularities). Polysilazane, organic resin, or the like is formed on the lower layer side unevenness forming film 13a. The upper side unevenness forming film 7a made of an insulating film made of a fluid material is laminated.

  Here, the columnar protrusions that form irregularities in the lower-layer-side irregularity forming film 13a have a circular or substantially polygonal planar shape. In addition, a plurality of types of columnar protrusions that form irregularities in the lower-layer-side irregularity forming film 13a are formed with different planar sizes. In FIG. 18 and FIG.

  Thus, the shape, size, and distribution of the concave / convex pattern 8g are defined by the shape, size, and distribution of the lower-layer concave / convex forming film 13a that constitutes the columnar protrusion.

(TFT manufacturing method)
A method for manufacturing the TFT array substrate 10 according to this embodiment will be described with reference to FIGS.

  20, FIG. 21 and FIG. 22 are all process cross-sectional views showing the manufacturing method of the TFT array substrate 11 of this embodiment. In any of these figures, the cross-sections of the TFT formation region and the light reflection film formation region are shown. It is.

  In manufacturing the TFT array substrate 10 of the present embodiment, a method referred to as a so-called low temperature process is adopted as a manufacturing process of the TFT 30 and the like. Since such a method is already well known, the TFT array of the present embodiment is used. Only the processes related to the characteristics of the substrate 10 will be described.

  In manufacturing the TFT array substrate 10 of this embodiment, as shown in FIG. 20A, after the TFT 30 is formed on the surface of the substrate 10 ′ made of glass or the like, on the surface side of the first interlayer insulating film 4, A conductive film 6 made of an aluminum film, a tantalum film, a molybdenum film, or an alloy film containing any one of these metals as a main component for forming the data line 6a (source electrode) or the like is formed to 300 nm to 800 nm by sputtering or the like. After the thickness is formed, a resist mask 555 is formed using a photolithography technique.

  Next, dry etching is performed on the conductive film 6 through the resist mask 555, so that the data line 6a and the drain electrode 6b are formed as illustrated in FIG.

  Next, as shown in FIG. 20C, the second interlayer insulating film 5 made of a silicon nitride film or the like is formed to a thickness of 100 nm to 300 nm on the surface side of the data line 6a and the drain electrode 6b by CVD or the like. After the formation, a resist mask 556 for forming a contact hole or the like in the second interlayer insulating film 5 is formed by using a photolithography technique.

  Next, dry etching is performed on the second interlayer insulating film 5 through the resist mask 556, and a contact hole is formed in a portion of the second interlayer insulating film 5 corresponding to the drain electrode 6b as shown in FIG. 5b is formed.

  Next, as shown in FIG. 21A, after applying a thick organic photosensitive resin 13 on the surface of the second interlayer insulating film 5, the photosensitive resin 13 is exposed through an exposure mask 510. . Here, either a negative type or a positive type may be used as the photosensitive resin 13, but FIG. 21A illustrates the case of the positive type as the photosensitive resin 13, and it is desired to remove the photosensitive resin 13. The portion is irradiated with ultraviolet rays through the light transmitting portion 511 of the exposure mask 510.

  Next, the exposed photosensitive resin 13 is developed, and as shown in FIG. 21B, refer to FIG. 19 in a region overlapping the light reflecting film 8a on the lower layer side of the light reflecting film 8a. Then, the lower side unevenness forming film 13a including the columnar protrusions and the contact holes 5b described above is formed.

  Next, as shown in FIG. 21C, after the fluid material 7 is applied to the surface side of the second interlayer insulating film 5 and the lower side unevenness forming film 13a, as shown in FIG. By patterning using photolithography technology, exposure, or development, the upper layer side unevenness forming film 7a having the contact hole 5b is formed.

  Next, as shown in FIG. 22A, a metal film 8 having reflectivity, such as an aluminum film, is formed on the surface of the upper-side unevenness forming film 7a by sputtering or the like, and then using a photolithography technique. A resist mask 557 is formed.

  Next, the metal film 8 is etched through the resist mask 557, and the light reflecting film 8a is left in a predetermined region as shown in FIG. On the surface of the light reflection film 8a thus formed, a concavo-convex pattern 8g of 500 nm or more, further 800 nm or more is formed by the lower layer side concavo-convex formation film 13a. By 7a, it becomes a gentle shape without an edge.

  Next, as shown in FIG. 22C, an ITO film 9 having a thickness of 40 nm to 200 nm is formed on the surface side of the light reflecting film 8a by a sputtering method or the like, and then a resist mask 558 is used using a photolithography technique. Form.

  Next, the ITO film 9 is etched through the resist mask 558 to form a pixel electrode 9a electrically connected to the drain electrode 6b through the contact hole 5b, as shown in FIG.

(Structure of unevenness and unevenness pattern)
Also in the electro-optical device 100 of the present embodiment, the light reflecting film 8a made of an aluminum film or the like is formed on the lower layer side of the pixel electrode 9a as in the first embodiment. Since the light can be reflected on the substrate 10 side and emitted from the counter substrate 20 side, a desired image can be displayed using external light if light modulation is performed for each pixel 100a by the liquid crystal 50 during this time. (Reflection mode).

  However, also in this embodiment, if the uneven pattern 8g on the surface of the light reflecting film 8a is completely the same in each pixel 100a, interference occurs in the reflected light from the light reflecting film 8a. As described with reference to FIG. 5, a large number of pixels 100a formed in a matrix are grouped into a plurality of units 101a, 102a, 103a,... At least in the units 101a, 102a, 103a,. For each pixel 100a, the uneven pattern 8g is formed in a different form. That is, when forming the lower side unevenness forming layer 13a in each pixel 100a, each pixel belonging to the units 101a, 102a, 103a,... Is used by using the unevenness pattern design method described with reference to FIGS. Concavity and convexity pattern 8g (irregularity patterns A to L) in which the planar shape, planar size, and planar position distribution of the columnar protrusions (irregularity) formed by lower layer side irregularity forming layer 13a are formed with respect to 100a. Thus, the exposure mask 510 is designed.

(Relationship between contact hole 5b and pixel 100a)
Further, in the present embodiment, the formation positions of the contact holes 5b are made different in each pixel 100a by using the method for designing the uneven pattern described with reference to FIGS.

  That is, when designing the formation position pattern of the contact hole 5b for each pixel 100a, as shown in FIG. 8, a plurality of pixels 100a formed in a matrix form are arranged in units of a plurality of units 101a, 102a, 103a,. The patterning exposure mask for the light reflecting film 8a is designed so that the contact hole 5b is formed at a different position for each pixel 100a in at least the units 101a, 102a, 103a,. That is, the position pattern of the contact hole 5b in the units 101a, 102a, 103a,... Is made different among the units 101a, 102a, 103a,.

  In addition, the units 101a, 102a, 103a,... Are all different in the formation positions of the contact holes 5b in the pixels 100a having the same position in the unit.

  As shown in FIG. 23A, when the exposure mask for forming the contact hole 5b is designed, the uneven pattern is determined when the contact hole 5b formation position pattern is made different for each pixel. The pixel 100a is defined as a reference pixel 100a ', and the position of the contact hole 5b formed in the reference pixel 100a' is rotationally moved as indicated by an arrow X around a predetermined position O1 in the pixel region, and thereby obtained. What is necessary is just to determine the translucent part of the exposure mask etc. which form the other pixel 100a so that it may correspond to the formation position of the contact hole 5b shown to FIG. 23 (B) and (C). If such a method is adopted, the area of the contact hole 5b in each pixel 100a is equal, but the formation position of the contact hole 5b can be made different.

  Moreover, when setting the formation position of various uneven | corrugated patterns and the contact hole 5b by such rotational movement, you may combine a parallel movement. That is, as shown in FIG. 24B, the reference pixel 100a ′ shown in FIG. 24A is moved at the center position O1, and the position of the contact hole 5b is indicated by the arrow X around the position O1. Further, as shown in FIG. 24C, the position of the contact hole 5b is centered on the position O1 while the center position O1 is moved to the opposite side of FIG. 24B. Further, as shown by X, the uneven position may be determined by further rotational movement.

  Further, the pixel 100a shown in FIG. 25A is set as a reference pixel 100a ′, and the position of the contact hole 5b formed in the reference pixel 100a ′ is indicated by an arrow X centering on a predetermined position O2 outside the pixel region. The contact hole 5b as shown in FIGS. 25B and 25C obtained by the rotation may be applied to the other pixel 100a.

  Further, when designing the exposure mask 510, the pixel 100a shown in FIG. 26A is used as the reference pixel 100a ', and the position of the contact hole 5b formed in the reference pixel 100a' is set to the position of the contact hole 4c in the pixel region. Each pixel 100a is rotated about the formation position O3 as indicated by an arrow X, and contact holes 5b obtained as shown in FIGS. 26B and 26C are formed in the other pixels 100a. Different uneven patterns 8g may be formed.

  As described above, in the active matrix type electro-optical device 100 using the TFT array substrate 10 of this embodiment, the uneven pattern 8g is different for each pixel 100a in the units 101a, 102a, 103a,... And the position of each concave / convex pattern 8g in the unit is different among the units 101a, 102a, 103a,..., So that the same concave / convex pattern 8g does not appear repeatedly. Therefore, interference does not occur in the reflected light from the light reflecting film 8a. In addition, when forming the uneven pattern 8g having a different shape for each pixel 100a, the uneven pattern 8g obtained by rotating the unevenness formed on the reference pixel 100a ′ around a predetermined position is set to the other pixel 100a. Forming. For this reason, according to the present embodiment, in each pixel 100a, the planar shape, planar size, or planar positional distribution variation of the lower layer side unevenness forming film 13a is controlled.

  In the present embodiment, the formation positions of the contact holes 5b are different for each pixel 100a in the units 101a, 102a, 103a,... And the formation position patterns of the contact holes 5b in the units are the units 101a, 102a,. 103a, and so on. In addition, the units 101a, 102a, 103a,... Are all different in the formation positions of the contact holes 5b in the pixels 100a having the same position in the unit. Therefore, the contact hole 5b does not appear repeatedly at the same position of each pixel 100a when the electro-optical device 100 is viewed from any direction. Therefore, even when the light reflecting film 8a is formed in the contact hole 5b, interference caused by the reflected light from the inclined portion of the inner wall of the contact hole 5b does not occur.

  Furthermore, in this embodiment, when the contact hole 5b is formed at a different position for each pixel 100a, the position of the contact hole 5b of the reference pixel 100a ′ is rotated around a predetermined position, or a combination of the parallel movement and the movement. The contact hole 5b is formed in the other pixel 100a. For this reason, according to this embodiment, even if the formation positions of the contact holes 5b are different in each pixel 100a, the area occupied by the contact holes 5b is equal in each pixel 100a. Furthermore, the relative positions of the contact holes 5b and the columnar protrusions that form irregularities in the lower-side irregularity forming film 13d are also equal in each pixel 100a.

[Modification of Embodiment 2]
In the above embodiment, the contact hole 5b is formed at different positions in the unit, and the formation position pattern of the contact hole 5b in the unit is different between the units. A configuration in which the formation positions of the contact holes 5b are different may be employed.

  Further, although the contact hole formation position in each pixel is different within the unit, the contact hole formation pattern may be the same between the units. If comprised in this way, it can be expanded to the unit period that the interference had generate | occur | produced with the pixel period in the past, and interference can be suppressed.

  Furthermore, in the above embodiment, the concave / convex pattern is formed differently for each pixel in the unit, and the position of each concave / convex pattern in the unit is different between units. The concavo-convex pattern may be formed in a different form.

  In the above embodiment, the lower side unevenness forming film 13a in which the planar shape forms, for example, a circular columnar protrusion has been described as an example. However, the planar shape of the columnar protrusion may be a hexagon, a hexagon, or other polygons. Good. However, in consideration of mask data and scattering characteristics, the planar shape is preferably a circle, a regular hexagon or a regular octagon. Further, holes may be formed instead of the columnar protrusions.

  Furthermore, in the above embodiment, the present invention is applied to a total reflection type electro-optical device. However, a transflective electro-optical device is configured by forming a light transmission hole in a part of the light reflection film. In this case, the present invention can be applied.

  In the above embodiment, the example in which the pixel electrode 8a made of an ITO film is formed on the light reflection film 8a so as to be applicable to both the total reflection type and the semi-transmission / reflection type has been described. If present, the light reflecting film may be used as the pixel electrode, or the light reflecting film may be formed on the pixel electrode made of the ITO film. Moreover, the ITO film may be formed only in the transmissive region. In this case, an overlapping region of the ITO film and the reflective film is provided at the boundary between the transmissive part and the reflective part, and the ITO film is formed on the upper layer or the lower layer of the reflective film. It is preferable to make an electrical connection. In any of these cases, it is effective to apply the present invention when a light reflecting film is formed in the contact hole.

[Application of electro-optical device to electronic equipment]
The reflection-type or semi-transmission / semi-reflection type electro-optical device 100 configured as described above can be used as a display unit of various electronic devices. An example thereof is shown in FIGS. A description will be given with reference to B).

  FIG. 27 is a block diagram illustrating a circuit configuration of an electronic apparatus using the electro-optical device according to the invention as a display device.

  27, the electronic device includes a display information output source 70, a display information processing circuit 71, a power supply circuit 72, a timing generator 73, and a liquid crystal device 74. The liquid crystal device 74 includes a liquid crystal display panel 75 and a drive circuit 76. As the liquid crystal device 74, the above-described electro-optical device 100 can be used.

  The display information output source 70 includes a storage unit such as a ROM (Read Only Memory) and a RAM (Random Access Memory), a storage unit such as various disks, a tuning circuit that tunes and outputs a digital image signal, and the like, and is generated by a timing generator 73. Display information such as an image signal in a predetermined format is supplied to the display information processing circuit 71 based on the various clock signals.

  The display information processing circuit 71 includes various known circuits such as a serial-parallel conversion circuit, an amplification / inversion circuit, a rotation circuit, a gamma correction circuit, a clamp circuit, and the like, executes processing of input display information, The signal is supplied to the drive circuit 76 together with the clock signal CLK. The power supply circuit 72 supplies a predetermined voltage to each component.

  FIG. 28A shows a mobile personal computer which is an embodiment of an electronic apparatus according to the invention. The personal computer 80 shown here has a main body 82 provided with a keyboard 81 and a liquid crystal display unit 83. The liquid crystal display unit 83 includes the electro-optical device 100 described above.

  FIG. 28B shows a mobile phone which is another embodiment of the electronic apparatus according to the invention. A cellular phone 90 shown here includes a plurality of operation buttons 91 and a display unit including the electro-optical device 100 described above.

〔The invention's effect〕
As described above, in the present invention, the concave / convex pattern is formed differently for each pixel in the unit, and the positions of the concave / convex patterns in the unit are different among the units. There is no such thing as appearing. Therefore, interference does not occur in the reflected light from the light reflecting film. In addition, since unevenness of the uneven shape, size, or distribution is controlled in the uneven pattern, it is possible to avoid occurrence of luminance unevenness and glare between pixels.

  In another embodiment of the present invention, the contact hole formation position differs for each pixel, so that the contact hole appears repeatedly at the same position of the pixel when viewed from any direction. There is no. Therefore, even when a light reflecting film is formed in the contact hole, interference caused by reflected light from the inclined portion of the inner wall of the contact hole does not occur.

FIG. 2 is a plan view of the electro-optical device according to the first embodiment of the present invention as viewed from the counter substrate side. It is sectional drawing in the HH 'line | wire of FIG. FIG. 2 is an equivalent circuit diagram of various elements and wirings formed in a large number of pixels arranged in a matrix in the electro-optical device shown in FIG. FIG. 2 is a plan view showing a configuration of each pixel formed on a TFT array substrate in the electro-optical device shown in FIG. 1. It is sectional drawing of a pixel when it cut | disconnects in the position equivalent to the AA 'line of FIG. (A)-(D) are process sectional drawings which show the manufacturing method of the TFT array substrate of the electro-optical device shown in FIG. (A)-(D) are process sectional drawings of each process performed following the process shown in FIG. 6 in the manufacturing method of the TFT array substrate of the electro-optical device shown in FIG. In the electro-optical device shown in FIG. 1, it is explanatory drawing which shows a mode that a different uneven | corrugated pattern is arrange | positioned with respect to each unit of a pixel. FIG. 2 is an explanatory diagram illustrating a difference in a concavo-convex pattern formed on a pixel in the electro-optical device illustrated in FIG. 1. FIG. 2 is an explanatory diagram illustrating a difference in a concavo-convex pattern formed on a pixel in the electro-optical device illustrated in FIG. 1. FIG. 2 is an explanatory diagram illustrating a difference in a concavo-convex pattern formed on a pixel in the electro-optical device illustrated in FIG. 1. FIG. 2 is an explanatory diagram illustrating a difference in a concavo-convex pattern formed on a pixel in the electro-optical device illustrated in FIG. 1. 1A to 1D are explanatory diagrams showing a state in which the concave / convex pattern forming region is divided into minute planes in the electro-optical device shown in FIG. 1, and an explanation of the angle θ between each minute surface and the substrate plane (horizontal plane). FIG. 4 is a histogram of the existence ratio in the pixel at the angle θ, and a histogram of the existence ratio of the angle θ in another pixel. FIG. 3 is an explanatory diagram of a Delaunay triangle for evaluating the relative distance relationship between the projections and depressions in the electro-optical device shown in FIG. 1. In the electro-optical device shown in FIG. 1, it is explanatory drawing which shows a mode that the unevenness | corrugation has interrupted at the edge part of a pixel. It is explanatory drawing which shows the restrictions to a rotation center when attaching a different uneven | corrugated pattern to the pixel of a transflective electro-optical device. In the electro-optical device shown in FIG. 1, it is explanatory drawing when various uneven | corrugated patterns are formed by parallel movement. FIG. 6 is a plan view showing a configuration of each pixel formed on a TFT array substrate in an electro-optical device according to Embodiment 2 of the present invention. It is sectional drawing of a pixel when it cut | disconnects in the position equivalent to the AA 'line of FIG. (A)-(D) are process sectional drawings which show the manufacturing method of the TFT array substrate shown in FIG. (A)-(D) are process sectional drawings of each process performed following the process shown in FIG. 20 in the manufacturing method of the TFT array substrate shown in FIG. 18A to 18D are process cross-sectional views illustrating a method for manufacturing a TFT array substrate of the active matrix type electro-optical device illustrated in FIG. FIG. 19 is an explanatory diagram illustrating a difference in formation positions of contact holes formed in pixels in the electro-optical device illustrated in FIG. 18. FIG. 19 is an explanatory diagram illustrating a difference in formation positions of contact holes formed in pixels in the electro-optical device illustrated in FIG. 18. FIG. 19 is an explanatory diagram illustrating a difference in formation positions of contact holes formed in pixels in the electro-optical device illustrated in FIG. 18. FIG. 19 is an explanatory diagram illustrating a difference in formation positions of contact holes formed in pixels in the electro-optical device illustrated in FIG. 18. FIG. 3 is a block diagram illustrating a circuit configuration of an electronic apparatus using the electro-optical device according to the invention as a display device. (A) and (B) are explanatory views of a mobile personal computer and a mobile phone as an embodiment of an electronic apparatus using the electro-optical device according to the present invention, respectively. It is a top view of the pixel of the TFT array substrate used for the conventional electro-optical apparatus. It is a sectional view of a part of a pixel of a conventional electro-optical device.

Explanation of symbols

1a semiconductor film, 1a 'channel formation region, 2 gate insulating film, 3a scanning line, 3b capacitance line, 4th first interlayer insulating film, 5th second interlayer insulating film, 5b contact hole, 6a data line, 6b drain electrode, 7a Upper layer side unevenness formation film, 8a Light reflection film, 8g Concavity and convexity pattern, 9a Pixel electrode, 10 TFT array substrate, 11 Base protection film, 13a Lower layer side unevenness formation film, 20 Counter substrate, 21 Counter electrode, 30 For pixel switching TFT, 50 liquid crystal, 60 storage capacity, 100 electro-optical device, 100a pixel, 100a reference pixel

Claims (9)

A concavo-convex forming layer formed in a state where a plurality of concavo-convex formed of protrusions or holes are dispersed in each of a large number of pixels arranged in a matrix on a substrate holding an electro-optic material, and an upper layer side of the concavo-convex forming layer. In an electro-optical device having a light reflecting film formed thereon, and a light scattering uneven layer is formed on the surface of the light reflecting film by the uneven forming layer.
The light reflecting film is electrically connected to the lower layer side or the upper layer side conductive layer through a contact hole, and the light reflecting film is also formed in the contact hole,
An electro-optical device, wherein the contact holes are formed at different positions among the plurality of pixels. 2. The contact hole formation position pattern in each unit is different among the plurality of units when the plurality of pixels are grouped into a plurality of units in accordance with claim 1. An electro-optical device. 3. The electro-optical device according to claim 2, wherein the formation position of the contact hole is different for each pixel in each of the units. 4. The electro-optical device according to claim 2, wherein contact hole formation positions of pixels located at the same place in each of the plurality of units are different among the plurality of units. 5. The electro-optical device according to claim 1, wherein the contact holes formed in each pixel have the same area. 5. The pixel switching thin film transistor is formed in each of the plurality of pixels, and the light reflecting film is electrically connected to the drain electrode of the thin film transistor through the contact hole. Connected to
In any of the large number of pixels, an electro-optical device is formed over substantially the entire pixel on the lower layer side of the light reflecting film. 5. The electro-optical device according to claim 1, wherein the uneven pattern is formed in a different form for each pixel. 5. The liquid crystal as the electro-optical material is held between the substrates according to claim 1, wherein the substrate is a first substrate, and a second substrate is disposed opposite to the first substrate. An electro-optical device characterized by comprising: An electronic apparatus comprising the electro-optical device defined in claim 1 as a display unit.

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