JP2006096589A - Method of forming dielectric film and method of manufacturing liquid jetting head - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of forming a dielectric film, in which the heat treatment time is shortened and the production cost is reduced to improve productivity and to give excellent characteristics, and a method of manufacturing a piezoelectric element. <P>SOLUTION: The method of forming the dielectric film has a coating step for forming a dielectric precursor film by applying sol of an organic metallic compound, a drying step for heating and drying the dielectric precursor film applied in the coating step, a degreasing step for heating and degreasing the dielectric precursor film applied in the coating step and a firing step for firing the dielectric precursor film degreased in the degreasing step to form the dielectric film. In at least 2 steps successive of the drying step, the degreasing step and the firing step, the continuous heating is carried out without lowering the temperature. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a dielectric film made of a dielectric material including a piezoelectric material and a method for manufacturing a liquid ejecting head including a piezoelectric element having a piezoelectric film made of a piezoelectric material.

  A piezoelectric element used for a liquid jet head or the like is an element in which a piezoelectric film made of a piezoelectric material exhibiting an electromechanical conversion function is sandwiched between two electrodes, and the piezoelectric film is made of, for example, crystallized piezoelectric ceramics Has been.

  In addition, as a liquid ejecting head using such a piezoelectric element, for example, a part of a pressure generation chamber communicating with a nozzle opening for ejecting ink droplets is configured by a diaphragm, and the diaphragm is deformed by the piezoelectric element. There is an ink jet recording head that pressurizes ink in a pressure generating chamber and ejects ink droplets from nozzle openings. Two types of ink jet recording heads have been put into practical use: those using a longitudinal vibration mode piezoelectric actuator that extends and contracts in the axial direction of the piezoelectric element, and those using a flexural vibration mode piezoelectric actuator. As an actuator using a flexural vibration mode actuator, for example, a uniform piezoelectric film is formed by a film forming technique over the entire surface of the diaphragm, and this piezoelectric layer is applied to the pressure generation chamber by a lithography method. A device in which a piezoelectric element is formed so as to be independent for each pressure generating chamber by dividing into shapes is known.

  A so-called sol-gel method is known as a method for manufacturing a piezoelectric layer constituting a piezoelectric element. That is, a step of applying a sol of an organometallic compound on a substrate on which a lower electrode is formed, drying and gelling (degreasing) to form a piezoelectric precursor film is performed at least once, and then at a high temperature. It is crystallized by heat treatment (firing). A piezoelectric layer (piezoelectric thin film) having a predetermined thickness is manufactured by repeating these steps a plurality of times (see, for example, Patent Document 1).

  However, since the heating device used for heating is different in each process of the drying process, the degreasing process, and the baking process, the temperature of the substrate must be lowered to near room temperature between the processes. That is, when one heat treatment step is completed, the temperature of the substrate is lowered to near room temperature and then transferred to the next step, and the temperature is raised to a predetermined heat treatment temperature in the next step. For this reason, in the next process after one process, it is necessary to heat the substrate to a temperature equal to or higher than that in the previous process from the state where the temperature of the substrate is lowered. There is a problem that the cost is increased due to consumption. In addition, if the heating apparatus is different in each process, it is necessary to replace the substrate with the heating apparatus in each process, which is complicated and takes time to manufacture, resulting in reduced productivity. Such a problem is not limited to a piezoelectric film made of a piezoelectric material used for a piezoelectric element or the like of a liquid ejecting head, and similarly exists in a dielectric film made of another dielectric material.

JP-A-9-223830 (pages 4-6)

  In view of such circumstances, the present invention can shorten the heat treatment time, reduce the manufacturing cost, improve the productivity, and provide a dielectric film manufacturing method and a piezoelectric element manufacturing method that can provide good characteristics. It is an object to provide a method.

A first aspect of the present invention that solves the above problems includes a coating step in which a sol of an organometallic compound is applied to form a dielectric precursor film, and the dielectric precursor film applied in the coating step is heated. A drying step of drying the dielectric precursor film, a degreasing step of heating and degreasing the dielectric precursor film dried in the drying step, and firing the dielectric precursor film degreased in the degreasing step A method for producing a dielectric film, comprising: a baking step for forming a film, and heating continuously without lowering the temperature in at least two consecutive steps of the drying step, the degreasing step, and the baking step is there.
In such a first aspect, by continuously heating without lowering the temperature in successive steps, the heat treatment time can be shortened and the manufacturing cost can be reduced without consuming wasteful energy for heating. Can do. In the present invention, the baking step may be performed after the coating step, the drying step, and the degreasing step are repeated a plurality of times, and even in such a case, at least two of the drying step, the degreasing step, and the baking step are continued. What is necessary is just to make it heat continuously, without making it cool in a process.

According to a second aspect of the present invention, in the method for producing a dielectric film according to the first aspect, at least two steps of the drying step, the degreasing step, and the baking step are performed by an RTP apparatus. is there.
In the second aspect, the RTP device can continuously heat without lowering the temperature in a continuous process, and improves the uniformity of heat in the in-plane direction of the dielectric precursor film, thereby increasing the in-plane direction. Thus, a dielectric film having uniform characteristics can be formed.

According to a third aspect of the present invention, in the first or second aspect, the dielectric is characterized in that the drying step, the degreasing step, and the firing step are continuously performed without lowering the temperature. It is in the manufacturing method of a film | membrane.
In the third aspect, by continuously heating without lowering the temperature in three consecutive steps, the heat treatment time can be further shortened and the manufacturing cost can be reduced without consuming wasteful energy for heating. can do.

According to a fourth aspect of the present invention, there is provided a step of forming a piezoelectric element in a region facing a pressure generating chamber that communicates with a nozzle opening that discharges droplets via a diaphragm that constitutes one surface of the pressure generating chamber. And forming the piezoelectric element includes: forming a lower electrode film on the diaphragm; forming a piezoelectric layer on the lower electrode film; and an upper electrode on the piezoelectric layer. And forming the piezoelectric layer by applying a sol of an organometallic compound to form a piezoelectric precursor film and the piezoelectric applied in the applying step. A drying process for heating and drying the body precursor film, a degreasing process for heating and degreasing the piezoelectric precursor film dried in the drying process, and the piezoelectric precursor film degreased in the degreasing process A temperature raising step of crystallizing the film to form a piezoelectric film Heating is continuously performed without lowering the temperature in at least two consecutive steps of the drying step, the degreasing step, and the firing step of the electric body layer forming step, and the piezoelectric layer forming step is performed a plurality of times to form a plurality of piezoelectric layers. A method of manufacturing a liquid ejecting head, comprising: stacking piezoelectric layers made of a body film.
In the fourth aspect, by continuously heating without lowering the temperature in successive steps, the heat treatment time can be shortened and the manufacturing cost can be reduced without consuming wasteful energy for heating. Can do.

Hereinafter, the present invention will be described in detail based on embodiments.
(Embodiment 1)
FIG. 1 is an exploded perspective view showing an ink jet recording head according to Embodiment 1 of the present invention, and FIG. 2 is a plan view and a cross-sectional view of FIG. As shown in the drawing, the flow path forming substrate 10 is made of a silicon single crystal substrate having a plane orientation (110) in this embodiment, and one surface thereof is made of silicon dioxide previously formed by thermal oxidation. An elastic film 50 of 5 to 2 μm is formed. A plurality of pressure generating chambers 12 are arranged in parallel in the width direction of the flow path forming substrate 10. In addition, a communication portion 13 is formed in a region outside the longitudinal direction of the pressure generation chamber 12 of the flow path forming substrate 10, and the communication portion 13 and each pressure generation chamber 12 are provided for each pressure generation chamber 12. Communication is made via a supply path 14. The communication part 13 constitutes a part of a reservoir that communicates with a reservoir part of a protective substrate, which will be described later, and serves as a common ink chamber for the pressure generating chambers 12. The ink supply path 14 is formed with a narrower width than the pressure generation chamber 12, and maintains a constant flow path resistance of ink flowing into the pressure generation chamber 12 from the communication portion 13.

Further, on the opening surface side of the flow path forming substrate 10, a nozzle plate 20 having a nozzle opening 21 communicating with the vicinity of the end portion of each pressure generating chamber 12 on the side opposite to the ink supply path 14 is provided with an adhesive or It is fixed via a heat welding film or the like. The nozzle plate 20 has a thickness of, for example, 0.01 to 1 mm, a linear expansion coefficient of 300 ° C. or less, for example, 2.5 to 4.5 [× 10 ⁻⁶ / ° C.], glass ceramics, silicon It consists of a single crystal substrate or non-rust steel.

On the other hand, as described above, the elastic film 50 made of silicon dioxide (SiO ₂ ) having a thickness of, for example, about 1.0 μm is formed on the side opposite to the opening surface of the flow path forming substrate 10. On the elastic film 50, an insulator film 55 made of zirconium oxide (ZrO ₂ ) having a thickness of, for example, about 0.4 μm is formed. Further, on the insulator film 55, a lower electrode film 60 having a thickness of, for example, about 0.2 μm, a piezoelectric layer 70 having a thickness of, for example, about 1.0 μm, and a thickness of, for example, about 0 The upper electrode film 80 having a thickness of 0.05 μm is laminated by a process described later to constitute the piezoelectric element 300. Here, the piezoelectric element 300 refers to a portion including the lower electrode film 60, the piezoelectric layer 70, and the upper electrode film 80. In general, one electrode of the piezoelectric element 300 is used as a common electrode, and the other electrode and the piezoelectric layer 70 are patterned for each pressure generating chamber 12. In addition, here, a portion that is configured by any one of the patterned electrodes and the piezoelectric layer 70 and in which piezoelectric distortion is generated by applying a voltage to both electrodes is referred to as a piezoelectric active portion. In this embodiment, the lower electrode film 60 is a common electrode of the piezoelectric element 300, and the upper electrode film 80 is an individual electrode of the piezoelectric element 300. However, there is no problem even if this is reversed for the convenience of the drive circuit and wiring. In either case, a piezoelectric active part is formed for each pressure generating chamber. Further, here, the piezoelectric element 300 and the vibration plate that is displaced by driving the piezoelectric element 300 are collectively referred to as a piezoelectric actuator. In addition, a lead electrode 90 made of, for example, gold (Au) or the like is connected to the upper electrode film 80 of each piezoelectric element 300, and a voltage is selectively applied to each piezoelectric element 300 via the lead electrode 90. Is applied.

Examples of the material of the piezoelectric layer 70 constituting the piezoelectric element 300 include a ferroelectric piezoelectric material such as lead zirconate titanate (PZT), niobium, nickel, magnesium, bismuth, A relaxor ferroelectric material to which a metal such as yttrium is added is used. The composition may be appropriately selected in consideration of the characteristics, use, etc. of the piezoelectric element 300. For example, PbTiO ₃ (PT), PbZrO ₃ (PZ), Pb (Zr _x Ti _1-x ) O ₃ (PZT) ), Pb (Mg _1/3 Nb _2/3 ) O ₃ -PbTiO ₃ (PMN-PT), Pb (Zn _1/3 Nb _2/3 ) O ₃ -PbTiO ₃ (PZN-PT), Pb (Ni ₁ ) _{/ 3 Nb 2/3) O 3 -PbTiO} 3 (PNN-PT), Pb (In 1/2 Nb 1/2) O 3 -PbTiO 3 (PIN-PT), Pb (Sc 1/2 Ta 1/2 _{) O 3 -PbTiO 3 (PST-} PT), Pb (Sc 1/2 Nb 1/2) O 3 -PbTiO 3 (PSN-PT), BiScO 3 -PbTiO 3 (BS-PT), BiYbO 3 -PbTiO 3 (BY PT), and the like.

  Further, a protective substrate 30 having a piezoelectric element holding portion 31 capable of securing a space that does not hinder its movement in a region facing the piezoelectric element 300 is bonded to the surface on the piezoelectric element 300 side on the flow path forming substrate 10. Has been. Since the piezoelectric element 300 is formed in the piezoelectric element holding part 31, it is protected in a state hardly affected by the external environment. Further, the protective substrate 30 is provided with a reservoir portion 32 in a region corresponding to the communication portion 13 of the flow path forming substrate 10. In this embodiment, the reservoir portion 32 is provided along the direction in which the pressure generating chambers 12 are arranged so as to penetrate the protective substrate 30 in the thickness direction, and as described above, the communication portion of the flow path forming substrate 10. The reservoir 100 is connected to the pressure generation chamber 12 and serves as a common ink chamber for the pressure generation chambers 12.

  In addition, a through hole 33 that penetrates the protective substrate 30 in the thickness direction is provided in a region between the piezoelectric element holding portion 31 and the reservoir portion 32 of the protective substrate 30, and the lower electrode film 60 is provided in the through hole 33. A part of the lead electrode 90 and the leading end of the lead electrode 90 are exposed, and one end of a connection wiring extending from the drive IC is connected to the lower electrode film 60 and the lead electrode 90, although not shown.

  In addition, examples of the material of the protective substrate 30 include glass, ceramic material, metal, resin, and the like, but it is more preferable that the material is substantially the same as the coefficient of thermal expansion of the flow path forming substrate 10. In this embodiment, the silicon single crystal substrate made of the same material as the flow path forming substrate 10 is used.

  A compliance substrate 40 including a sealing film 41 and a fixing plate 42 is bonded onto the protective substrate 30. The sealing film 41 is made of a material having low rigidity and flexibility (for example, a polyphenylene sulfide (PPS) film having a thickness of 6 μm). Yes. The fixing plate 42 is made of a hard material such as metal (for example, stainless steel (SUS) having a thickness of 30 μm). Since the region of the fixing plate 42 facing the reservoir 100 is an opening 43 that is completely removed in the thickness direction, one surface of the reservoir 100 is sealed only with a flexible sealing film 41. Has been.

  In such an ink jet recording head of this embodiment, ink is taken in from an external ink supply means (not shown), filled with ink from the reservoir 100 to the nozzle opening 21, and then in accordance with a recording signal from a drive IC (not shown). Then, a voltage is applied between each of the lower electrode film 60 and the upper electrode film 80 corresponding to the pressure generation chamber 12 to bend and deform the elastic film 50, the insulator film 55, the lower electrode film 60, and the piezoelectric layer 70. As a result, the pressure in each pressure generating chamber 12 increases and ink droplets are ejected from the nozzle openings 21.

  Here, a method of manufacturing such an ink jet recording head will be described with reference to FIGS. 3 to 6 are cross-sectional views in the longitudinal direction of the pressure generating chamber 12, and FIG. 7 is a diagram illustrating a temperature profile. First, as shown in FIG. 3A, a channel forming substrate wafer 110 which is a silicon wafer is thermally oxidized in a diffusion furnace at about 1100 ° C., and a silicon dioxide film 51 constituting an elastic film 50 is formed on the surface thereof. To do. In the present embodiment, a silicon wafer having a relatively thick plate thickness of about 625 μm and high rigidity is used as the flow path forming substrate 10.

  Next, as shown in FIG. 3B, an insulator film 55 made of zirconium oxide is formed on the elastic film 50 (silicon dioxide film 51). Specifically, first, a zirconium layer is formed on the elastic film 50 by, for example, DC sputtering, and the zirconium film is thermally oxidized to form the insulator film 55 made of zirconium oxide. Next, as shown in FIG. 3C, for example, after the lower electrode film 60 is formed by laminating platinum and iridium on the insulator film 55, the lower electrode film 60 is patterned into a predetermined shape.

  Next, as shown in FIG. 3D, for example, a piezoelectric layer 70 made of lead zirconate titanate (PZT) is formed. Here, in the present embodiment, a so-called sol-gel is obtained in which a so-called sol in which a metal organic material is dissolved and dispersed in a catalyst is applied, dried, gelled, and further fired at a high temperature to obtain a piezoelectric layer 70 made of a metal oxide. The piezoelectric layer 70 is formed using the method. The material of the piezoelectric layer 70 is not limited to lead zirconate titanate, and other piezoelectric materials such as relaxor ferroelectrics (for example, PMN-PT, PZN-PT, PNN-PT, etc.) are used. May be. The method for manufacturing the piezoelectric layer 70 is not limited to the sol-gel method, and for example, a MOD (Metal-Organic Decomposition) method or the like may be used.

  As a specific procedure for forming the piezoelectric layer 70, first, as shown in FIG. 4A, a piezoelectric precursor film 71 that is a PZT precursor film is formed on the lower electrode film 60. That is, a sol (solution) containing a metal organic compound is applied onto the flow path forming substrate 10 on which the lower electrode film 60 is formed (application process). Next, the piezoelectric precursor film 71 is heated to a predetermined temperature and dried for a predetermined time (drying step 200; see FIG. 7). For example, in the present embodiment, the piezoelectric precursor film 72 can be dried by holding at 170 to 180 ° C. for 8 to 30 minutes. Moreover, 0.5-1.5 degreeC / sec is suitable for the temperature increase rate in the drying process 200. FIG. The “temperature increase rate” referred to here is the time from the temperature at which the temperature difference between the temperature at the start of heating (room temperature) and the attained temperature increases by 20% to the temperature at which the temperature difference reaches 80%. It is defined as the rate of change. For example, when the temperature is raised from room temperature 25 ° C. to 100 ° C. in 50 seconds, the rate of temperature rise is (100−25) × (0.8−0.2) /50=0.9 [° C./sec]. Become.

Next, the dried piezoelectric precursor film 71 is degreased by continuously heating it to a predetermined temperature and holding it for a certain time without lowering the temperature from the temperature heated in the drying step 200 (degreasing step 201; see FIG. 7). ). For example, in this embodiment, the piezoelectric precursor film 71 is degreased by heating to a temperature of about 300 to 400 ° C. and holding for about 15 to 30 minutes. Here, degreasing refers, the organic components contained in the piezoelectric precursor film 71, for _example, is to be detached as _{NO 2, CO 2, H 2} O or the like. In the degreasing step, it is preferable that the temperature rising rate is 0.5 to 1.5 ° C./sec.

  Next, without lowering the temperature of the piezoelectric precursor film 71 from the temperature heated in the degreasing step 201, the piezoelectric precursor film 71 is continuously crystallized by being heated to a predetermined temperature and held for a certain period of time, thereby forming a piezoelectric film 73 ( Firing step 202; see FIG. In the firing step 202, it is preferable to heat the piezoelectric precursor film 71 to 680 to 900 ° C. In this embodiment, the piezoelectric precursor film 71 is fired by heating at 680 ° C. for 5 to 30 minutes. A body film 73 was formed. Moreover, in the baking process 202, it is preferable that a temperature increase rate shall be 15 degrees C / sec or less.

  In addition, as such a heating device that can continuously heat to a predetermined temperature in the next step without lowering the temperature from the heating temperature of the previous step in the drying step 200, the degreasing step 201, and the baking step 202, for example, An RTP (Rapid Thermal Processing) device that heats by irradiation with an infrared lamp can be used. This RTP apparatus can freely control the rate of temperature increase from 0 to 15 ° C./sec in a temperature range from room temperature to about 800 ° C., and includes a drying step 200, a degreasing step 201, and a baking step 202. The heating condition is satisfied.

  Thus, in the continuous process of the drying process 200, the degreasing process 201, and the baking process 202, it is not necessary to heat again in the next process up to the heating temperature of the previous process by heating continuously without lowering the temperature, The heat treatment time can be shortened, and the manufacturing cost can be reduced without consuming unnecessary energy by heating. Further, by using the same heating device in each step, the work of replacing the flow path forming substrate wafer 110 with a different device can be omitted, and the work can be simplified and the productivity can be improved.

  Here, the actual temperature at the predetermined position in the in-plane direction of the wafer with the thermocouple and the variation between the case where the wafer with the thermocouple is heated by the conventional hot plate and the case where the wafer is heated by the RTP apparatus of the present embodiment. Examined. Specifically, each of the hot plate and the RTP apparatus performs a degreasing process in which the temperature of the wafer with thermocouple is raised from room temperature to 320 ° C., and FIG. As shown, the actual temperatures at predetermined positions 1 to 5 in the in-plane direction of the wafer 110A with thermocouple were measured. The result is shown in FIG. 9A is a graph showing the temperature when the wafer with thermocouple is heated by a hot plate, and FIG. 9B is a graph showing the temperature when the wafer with thermocouple is heated by an RTP apparatus. is there.

  As shown in FIG. 9A, when the thermocouple-equipped wafer 110A is heated by a hot plate, the temperature variation in the in-plane direction is about 24 ° C. at 200 ° C. in the temperature rising process and 320 ° C. in the reached temperature. And about 10 ° C. On the other hand, as shown in FIG. 9B, when the thermocouple-equipped wafer 110A is heated by the RTP apparatus, the temperature in the in-plane direction is 200 ° C. in the temperature rising process and 320 ° C. in the reached temperature. The variations were about 8 ° C. and about 6 ° C., respectively. By performing the heat treatment with the RTP apparatus in this way, the uniformity of heat applied to the wafer can be improved, and the in-plane characteristics of the piezoelectric film 73 can be made uniform.

  Then, by repeating the coating process, the drying process 200, the degreasing process 201, and the baking process 202 described above a plurality of times, as shown in FIG. 4C, a plurality of layers, in this embodiment, ten piezoelectric films 73 are used. A piezoelectric layer 70 having a predetermined thickness is formed. For example, when the film thickness per sol is about 0.1 μm, the entire film thickness of the piezoelectric layer 70 is about 1 μm.

  After the piezoelectric layer 70 is formed in this way, as shown in FIG. 5A, for example, an upper electrode film 80 made of iridium is formed on the entire surface of the flow path forming substrate wafer 110. Next, as shown in FIG. 5B, the piezoelectric layer 300 and the upper electrode film 80 are patterned in a region facing each pressure generating chamber 12 to form the piezoelectric element 300. Next, the lead electrode 90 is formed. Specifically, as shown in FIG. 5C, a metal layer 91 made of, for example, gold (Au) or the like is formed over the entire surface of the flow path forming substrate wafer 110. Thereafter, for example, the lead electrode 90 is formed by patterning the metal layer 91 for each piezoelectric element 300 through a mask pattern (not shown) made of a resist or the like.

  Next, as shown in FIG. 5D, a protective substrate wafer 130 that is a silicon wafer and serves as a plurality of protective substrates 30 is bonded to the piezoelectric element 300 side of the flow path forming substrate wafer 110. Since the protective substrate wafer 130 has a thickness of, for example, about 400 μm, the rigidity of the flow path forming substrate wafer 110 is remarkably improved by bonding the protective substrate wafer 130.

  Next, as shown in FIG. 6A, after the flow path forming substrate wafer 110 is polished to a certain thickness, it is further wet-etched with fluorinated nitric acid, so that the flow path forming substrate wafer 110 is Make it thick. For example, in this embodiment, the flow path forming substrate wafer 110 is etched so as to have a thickness of about 70 μm. Next, as shown in FIG. 6B, a mask film 52 made of, for example, silicon nitride (SiN) is newly formed on the flow path forming substrate wafer 110 and patterned into a predetermined shape. Then, the flow path forming substrate wafer 110 is anisotropically etched through the mask film 52, whereby, as shown in FIG. 13 and the ink supply path 14 are formed.

  After that, unnecessary portions of the outer peripheral edge portions of the flow path forming substrate wafer 110 and the protective substrate wafer 130 are removed by cutting, for example, by dicing. The nozzle plate 20 having the nozzle openings 21 formed on the surface of the flow path forming substrate wafer 110 opposite to the protective substrate wafer 130 is bonded, and the compliance substrate 40 is bonded to the protective substrate wafer 130. By dividing the flow path forming substrate wafer 110 and the like into the flow path forming substrate 10 and the like of one chip size as shown in FIG. 1, the ink jet recording head of this embodiment is obtained.

(Other embodiments)
As mentioned above, although each embodiment of this invention was described, this invention is not limited to embodiment mentioned above. For example, in the first embodiment described above, the piezoelectric film 73 is formed by performing the coating process, the drying process 200, the degreasing process 201, and the baking process 202, and the piezoelectric layer 70 is formed by repeating this multiple times. However, the present invention is not particularly limited thereto. For example, the firing process may be performed after the piezoelectric precursor film having a predetermined thickness is formed by repeating the coating process, the drying process, and the degreasing process a predetermined number of times. Here, for example, when the coating process, the drying process, and the degreasing process are repeated twice, the piezoelectric precursor film is continuously heated to a predetermined temperature without being lowered from the temperature of the drying process in the first degreasing process, When the first degreasing process is completed, the temperature is lowered to room temperature, and the second coating process is performed at room temperature. In the second drying step, degreasing step, and firing step, the temperature may be heated to the predetermined temperature of the next step without lowering the temperature from the temperature of the previous step as in the first embodiment.

  In the above-described embodiment, the present invention has been described by exemplifying an ink jet recording head. However, the present invention can also be applied to a liquid ejecting liquid other than ink. Other liquid ejecting heads include, for example, various recording heads used in image recording apparatuses such as printers, color material ejecting heads used in the manufacture of color filters such as liquid crystal displays, organic EL displays, and FEDs (surface emitting displays). Examples thereof include an electrode material ejection head used for electrode formation, a bioorganic matter ejection head used for biochip production, and the like.

  Furthermore, the present invention is not limited to a method for manufacturing a liquid jet head having a piezoelectric element. That is, it goes without saying that the present invention is not limited to a method for manufacturing a piezoelectric layer made of a piezoelectric material, but can be applied to manufacturing a dielectric film made of any dielectric material.

FIG. 3 is an exploded perspective view of the recording head according to the first embodiment. 2A and 2B are a plan view and a cross-sectional view of the recording head according to the first embodiment. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. It is a figure which shows the temperature profile which concerns on Embodiment 1. FIG. It is a figure which shows the temperature measurement position in the surface of a wafer. It is a graph which shows the dispersion | variation in the temperature in the surface direction of a wafer.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 Flow path formation board | substrate, 12 Pressure generation chamber, 20 Nozzle plate, 21 Nozzle opening, 30 Protection board, 31 Piezoelectric element holding | maintenance part, 32 Reservoir part, 40 Compliance board | substrate, 50 Elastic film, 55 Insulator film, 60 Lower electrode film , 70 piezoelectric film, 80 upper electrode film, 100 reservoir, 110 wafer for flow path forming substrate, 110A wafer with thermocouple, 200 drying process, 201 degreasing process, 202 firing process, 300 piezoelectric element

Claims (4)

A coating step for forming a dielectric precursor film by applying a sol of an organometallic compound, a drying step for heating and drying the dielectric precursor film applied in the coating step, and a drying step for drying. A degreasing step of heating and degreasing the dielectric precursor film, and a firing step of firing the dielectric precursor film degreased in the degreasing step to form a dielectric film,
A method for producing a dielectric film, comprising heating at least two successive steps of the drying step, the degreasing step and the firing step without lowering the temperature. 2. The method of manufacturing a dielectric film according to claim 1, wherein at least two successive steps of the drying step, the degreasing step, and the firing step are performed by an RTP apparatus. 3. The method for manufacturing a dielectric film according to claim 1, wherein heating is performed continuously without decreasing the temperature in the successive steps of the drying step, the degreasing step, and the firing step. Forming a piezoelectric element in a region facing a pressure generating chamber communicating with each of the nozzle openings for discharging droplets via a vibration plate constituting one surface of the pressure generating chamber;
The step of forming the piezoelectric element includes a step of forming a lower electrode film on the diaphragm, a step of forming a piezoelectric layer on the lower electrode film, and an upper electrode film on the piezoelectric layer. And the step of forming the piezoelectric layer includes applying a sol of an organometallic compound to form a piezoelectric precursor film, and the piezoelectric precursor film applied in the applying step A drying step for heating and drying, a degreasing step for heating and degreasing the piezoelectric precursor film dried in the drying step, and crystallizing the piezoelectric precursor film degreased in the degreasing step The piezoelectric body is heated continuously without lowering the temperature in at least two successive steps of the drying step, the degreasing step and the firing step of the piezoelectric layer forming step having a temperature raising step to obtain a piezoelectric film. Multiple layer formation processes are performed multiple times The method of manufacturing a liquid jet head, characterized by laminating a piezoelectric layer made of a piezoelectric film.

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